CN117241622B - A display panel and a manufacturing method thereof - Google Patents
A display panel and a manufacturing method thereof Download PDFInfo
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Abstract
本申请提供一种显示面板及其制作方式，该显示面板包括：基板；多个子像素，设置于基板上；像素限定层，设置于基板上，像素限定层用于限定多个子像素的位置；隔离结构，设置于像素限定层上，隔离结构用于隔离多个子像素，隔离结构包括依次层叠的第一导电层、第一绝缘层、第二导电层和第二绝缘层，相邻两个子像素的阴极层通过第一导电层连接，第一绝缘层上设有过孔，第一导电层和第二导电层通过过孔连接；阴极辅助层，设置于隔离结构上，阴极辅助层连接第二导电层。通过上述方法，提升了整面阴极的均一性，增大了阴极面积，进而减弱因阴极电阻较大而造成的IR Drop，改善显示亮度不均匀的现象。
The present application provides a display panel and a manufacturing method thereof, the display panel comprising: a substrate; a plurality of sub-pixels, arranged on the substrate; a pixel defining layer, arranged on the substrate, the pixel defining layer being used to define the positions of the plurality of sub-pixels; an isolation structure, arranged on the pixel defining layer, the isolation structure being used to isolate the plurality of sub-pixels, the isolation structure comprising a first conductive layer, a first insulating layer, a second conductive layer and a second insulating layer stacked in sequence, the cathode layers of two adjacent sub-pixels being connected via the first conductive layer, the first insulating layer being provided with a via hole, the first conductive layer and the second conductive layer being connected via the via hole; a cathode auxiliary layer, arranged on the isolation structure, the cathode auxiliary layer being connected to the second conductive layer. Through the above method, the uniformity of the entire cathode is improved, the cathode area is increased, and the IR Drop caused by the large cathode resistance is reduced, thereby improving the phenomenon of uneven display brightness.
Description
Technical Field
The application mainly relates to the technical field of display, in particular to a display panel and a manufacturing method thereof.
Background
An OLED (Organic Light-Emitting Diode), namely an Organic Light-Emitting Diode, uses an ITO transparent electrode and a metal electrode as an Anode (Anode) and a Cathode (Cathode) of a device respectively, and under a certain voltage driving, electrons and holes respectively move from the Cathode and the Anode to the Organic Light-Emitting layer for recombination and then emit visible Light. The LED display device has the advantages of no need of a backlight source, large visual angle, richer colors, remarkable energy conservation and the like, and is widely applied to various fields.
In the related art, in order to realize high resolution and colorization of the passive matrix OLED, the problems of low resolution of a cathode template, low yield of a device and the like are better solved, a cathode isolation column structure is introduced in practical research, and an FMM (FINE METAL MASK, metal mask) process is adopted for deposition, namely, a metal template is not used in device preparation, and an insulating partition wall is manufactured on a substrate before an organic film and a metal cathode are evaporated, so that different pixels of the device are separated, and a pixel array is realized.
The adoption of the mode can cause poor uniformity of the whole surface of the cathode, so that the IR Drop (resistance Drop) is obvious, and the problems of uneven brightness and the like are displayed.
Disclosure of Invention
The application mainly aims to provide a display panel and a manufacturing method thereof, wherein an auxiliary cathode can be formed at the top of a cathode in the panel, the cathode is connected with the auxiliary cathode, the area of the cathode is increased, the uniformity of the cathode on the whole surface is improved, IR Drop is reduced, and the problem of uneven display brightness is solved.
The application provides a display panel which comprises a substrate, a plurality of sub-pixels arranged on the substrate, a pixel limiting layer arranged on the substrate and used for limiting the positions of the sub-pixels, an isolation structure arranged on the pixel limiting layer and used for isolating the sub-pixels, wherein the isolation structure comprises a first conducting layer, a first insulating layer, a second conducting layer and a second insulating layer which are sequentially stacked, cathode layers of two adjacent sub-pixels are connected through the first conducting layer, a via hole is formed in the first insulating layer, the first conducting layer is connected with the second conducting layer through the via hole, a cathode auxiliary layer is arranged on the isolation structure and connected with the second conducting layer.
In one embodiment, the first insulating layer includes a main body portion and a top portion disposed on the main body portion, the top portion extending beyond an upper surface of the main body portion to form a first overhang portion, and the second insulating layer extending beyond an upper surface of the second conductive layer to form a second overhang portion.
In one embodiment, the via extends through the body portion and the top portion.
In one embodiment, the cathode auxiliary layer covers the upper, side and lower surfaces of the second overhang, the side of the second conductive layer, and the upper and side of the first overhang.
In an embodiment, the side of the first overhang portion is further provided with an organic layer, and the cathode auxiliary layer covers the organic layer.
In one embodiment, the sub-pixel includes an anode layer, a light emitting layer and a cathode layer sequentially stacked, the light emitting layer overlapping the upper surface of the pixel defining layer, the cathode layer extending between the light emitting layer and the first conductive layer and contacting the upper surface of the pixel defining layer.
In one embodiment, the display panel further comprises a protection layer, a first packaging layer and a second packaging layer, wherein the protection layer covers the cathode layer, the first conducting layer, the first insulating layer and the cathode auxiliary layer, the first packaging layer covers the protection layer and the second insulating layer, the upper surface of the first packaging layer is of a flat structure, and the second packaging layer is arranged on the first packaging layer.
The application further provides a manufacturing method of the display panel, which comprises the steps of providing a substrate, forming an anode layer and a pixel limiting layer on the substrate, sequentially forming a first conductive layer, a first insulating layer, a second conductive layer and a second insulating layer on the pixel limiting layer, wherein a via hole is formed in the first insulating layer, the first conductive layer and the second conductive layer are connected through the via hole, a light-emitting layer and a cathode layer are sequentially formed on the anode layer, a cathode auxiliary layer is formed on the isolation structure, the cathode auxiliary layer is connected with the second conductive layer, the anode layer, the light-emitting layer and the cathode layer form sub-pixels, and the cathode layers of two adjacent sub-pixels are connected through the first conductive layer.
In one embodiment, the first conductive layer, the first insulating layer, the second conductive layer and the second insulating layer are sequentially formed on the pixel limiting layer, the first insulating layer comprises a main body part and a top part arranged on the main body part, the top part extends out of the upper surface of the main body part to form a first overhang part, a through hole penetrating through the main body part and the top part is formed on the first insulating layer, the second conductive layer is formed on the first insulating layer and connected with the first conductive layer through the through hole, the second insulating layer is formed on the second conductive layer, and the second insulating layer extends out of the upper surface of the second conductive layer to form a second overhang part.
In one embodiment, forming a light emitting layer and a cathode layer sequentially on the anode layer and forming a cathode auxiliary layer on the isolation structure includes forming a light emitting layer on the anode layer and forming an organic layer on a side of the first overhang portion, forming a cathode layer on the light emitting layer and forming a cathode auxiliary layer on an upper surface, a side, and a lower surface of the second overhang portion, a side of the second conductive layer, and an upper surface and a side of the first overhang portion.
According to the display panel and the display panel manufactured by the manufacturing method, the double overhang structure is added on the overhang structure base, so that the cathode is an auxiliary cathode formed on the top overhang structure, the bottom cathode and the auxiliary cathode are connected through the metal column, uniformity of the whole cathode is improved, the area of the cathode is increased, the cathode resistance is reduced, IR Drop caused by larger cathode resistance is further reduced, and the phenomenon of uneven display brightness is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein:
FIG. 1 is a schematic diagram of a display panel according to an embodiment of the present application;
FIG. 2 is a schematic diagram showing an intermediate structure of an embodiment of a display panel according to the present application;
FIG. 3 is a top plan view of the positions of the anode, cathode, and auxiliary cathode of the back plate;
FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating a display panel according to the present application;
FIG. 5 is a schematic flow chart of the substeps of step S14 in FIG. 4;
FIG. 6 is a schematic flow chart of the substeps of step S16 in FIG. 4;
Fig. 7a to 7k are schematic structural diagrams corresponding to each step in the manufacturing method of the display panel provided in fig. 4;
Fig. 8 is a schematic structural diagram of an embodiment of a display device provided by the present application.
Reference numerals 100, display panel, 10, substrate, 20, sub-pixel, 21, anode layer, 22, luminescent layer, 23, cathode layer, 30, pixel defining layer, 40, isolation structure, 41, first conductive layer, 42, first insulating layer, 421, main body portion, 422, top portion, 43, second conductive layer, 44, second insulating layer, 50, cathode auxiliary layer, 60, protective layer, 70, first encapsulation layer, 80, second encapsulation layer, a, first overhang portion, b, second overhang portion, c, organic layer, a, via hole, 1, anode region, 2, cathode region, 3, auxiliary cathode region, 200, display device.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present application are shown in the drawings. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terms "first," "second," and the like in this disclosure are used for distinguishing between different objects and not for describing a particular sequential order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
At present, in order to better solve the problems of low resolution of a cathode template, low yield of devices and the like, a cathode isolation column structure is introduced in practical research to isolate different pixels so as to solve the problems of short circuit and the like of an organic light-emitting layer between adjacent pixels, and in practical design, due to the fact that the opening distance between the pixels is smaller and the width of a suspension body is limited, the suspension body is limited to the fact that the width of a conductive oxide column is smaller and the contact resistance is larger, the uniformity of the whole surface of a cathode is poor, IR Drop caused by the poor uniformity is obvious, and the problems of uneven brightness and the like appear in display.
Referring to fig. 1 and 2, fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the application. Fig. 2 is a schematic diagram of an intermediate structure of an embodiment of a display panel according to the present application. The display panel includes a substrate 10, sub-pixels 20, a pixel defining layer 30, an isolation structure 40, and a cathode auxiliary layer 50.
Specifically, the plurality of sub-pixels 20 are disposed on the substrate 10, the sub-pixels 20 include an anode layer 21, a light emitting layer 22 and a cathode layer 23 sequentially stacked, a pixel defining layer 30 disposed on the substrate 10, the pixel defining layer 30 being used for defining positions of the plurality of sub-pixels 20, an isolation structure 40 disposed on the pixel defining layer, the isolation structure 40 being used for isolating the plurality of sub-pixels 20, the isolation structure 40 including a first conductive layer 41, a first insulating layer 42, a second conductive layer 43 and a second insulating layer 44 sequentially stacked, the cathode layers 23 of two adjacent sub-pixels 20 being connected by the first conductive layer 41, the first insulating layer 42 being provided with a via hole a, the first conductive layer 41 and the second conductive layer 43 being connected by the via hole, and a cathode auxiliary layer 50 disposed on the isolation structure 40, the cathode auxiliary layer 50 being connected to the second conductive layer 43.
The first conductive layer 41 and the second conductive layer 43 may be made of metal oxide, transition metal oxide or other conductive materials, specifically, the materials of the first conductive layer 41 and the second conductive layer 43 may be the same or different, and the setting is specifically performed according to the actual situation.
Alternatively, in one embodiment, the first insulating layer 42 includes a main body 421 and a top 422 disposed on the main body 421, the top 422 extending beyond an upper surface of the main body 421 to form a first overhang a, and the second insulating layer 44 extending beyond an upper surface of the second conductive layer 43 to form a second overhang b. The main body 421 and the top 422 of the first insulating layer 42 are made of silicon monoxide (SiO), silicon dioxide (SiO 2), silicon nitride (SiNx), silicon oxynitride (SiNO), and the like, and have different etching rates to form an inverted trapezoid mushroom shape. In one embodiment, the first insulating layer 42 forms a first overhang portion a over the first conductive layer 41 using a double layer structure of silicon oxide (SiO) and silicon nitride (SiNx) to form a first inverted trapezoid mushroom structure, and the second insulating layer 44 forms a second overhang portion b over the second conductive layer 43 using an inorganic SiNx material to form a second inverted trapezoid mushroom structure, the first inverted trapezoid structure and the second inverted trapezoid structure forming a double overhang structure together.
Alternatively, in one embodiment, the lengths of the first overhang portion a and the second overhang portion b are equal, and in another embodiment, the length of the first overhang portion a is smaller than the length of the second overhang portion b, and the isolation structure 40 is made to take on a mushroom structure by constructing the first overhang portion a and the second overhang portion b, so as to solve the problem of short circuit of the organic light emitting layer between adjacent pixels.
Optionally, in an embodiment, the via hole a penetrates through the main body 421 and the top 422, and by etching and punching the first insulating layer 42, the subsequent connection between the bottom first conductive layer 41 and the top second conductive layer 43 through the via hole a is achieved, and the second conductive layer 43 is connected to the cathode auxiliary layer 50, and the first conductive layer 41 is connected to the cathode layer 23, so that connection conduction between the four is achieved, and the whole cathode conduction is formed.
Alternatively, in an embodiment, the cathode auxiliary layer 50 covers the upper, side and lower surfaces of the second overhang portion b, the side of the second conductive layer 43, and the upper and side surfaces of the first overhang portion a.
Optionally, in an embodiment, the side of the first overhang portion a is further provided with an organic layer c, and the cathode auxiliary layer 50 covers the organic layer c.
Wherein during the evaporation deposition, the cathode layer 23 and the light emitting layer 22 are broken at the extended protruding overhang portion during the formation due to the existence of the extended overhang portion in the isolation structure 40, so that the cathode auxiliary layer 50 and the organic layer c are formed on the overhang portion. Specifically, in one embodiment, the cathode auxiliary layer 50 and the organic layer c are formed by changing the evaporation deposition angle of the cathode layer 23 and the light emitting layer 22 to be broken at the second overhang portion b of the second insulating layer 44, wherein the organic layer c covers a portion of the upper surface and the side surface of the first overhang portion a in the first insulating layer 42, the cathode auxiliary layer 50 covers the upper surface and the side surface of the first overhang portion a in the first insulating layer 42 and the upper surface and the side surface of the second overhang portion b in the second insulating layer 44, the organic layer c is surface-covered and deposited to cover the side surface of the second conductive layer 43 to be in contact connection with the second conductive layer 43, and the cathode auxiliary layer 50 is conducted with the second conductive layer 43.
Alternatively, in an embodiment, the sub-pixel 20 includes an anode layer 21, a light emitting layer 22, and a cathode layer 23 sequentially stacked, the light emitting layer 22 overlapping the upper surface of the pixel defining layer 30, and the cathode layer 23 extending between the light emitting layer 22 and the first conductive layer 41 and contacting the upper surface of the pixel defining layer 30. Due to the above-described first overhang portion a and second overhang portion b, during the deposition of the cathode layer 23 and the light emitting layer 22, the cathode layer 23 covers the upper surface and the side surface of the light emitting layer 22, is in contact with the first conductive layer 41, thereby achieving conduction between the cathode layer 23 and the first conductive layer 41, and the light emitting layer 22 is isolated from the first conductive layer 41 by the cathode layer 23, preventing conduction between the light emitting layer 22 and the first conductive layer 41, so that the adjacent sub-pixels have a problem of short circuit of the organic light emitting layer.
Where the sub-pixels 20 are a plurality and are spaced apart between the isolation structures 40, the material of the anode layer 21 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials and combinations thereof.
The light emitting layer 22 is for emitting red, blue or green light when energized. The light emitting layer 22 may include one or more of HIL (Hole Injection Layer ), HTL (Hole TRANSFER LAYER, hole transport layer), EML (EMITTING LAYER, emissive layer), and ETL (Electron TRANSFER LAYER ).
The two ends of the cathode layer 23 are in contact with the first conductive layer 41 in the isolation structure 40, so that the adjacent sub-pixels connect the cathode layers 23 of each other through the first conductive layer 41 to realize the cathode connection conduction of the whole surface, wherein the materials of the cathode layer 23 include, but are not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof or other suitable conductive materials and combinations thereof. The material of the cathode layer 23 may be the same as or different from the material of the anode layer 21, and is specifically set according to the actual situation.
Specifically, in one embodiment, the cathode auxiliary layer 50 is shown in fig. 3, and fig. 3 is a top view of the anode, the cathode, and the auxiliary cathode of the back plate. The middle position is the anode region 1, the open cathode region 2 is connected into a whole surface through the conductive layer of the overhang structure around the anode, the auxiliary cathode region 3 at the top of the overhang structure forms a ring-shaped whole surface conductive layer at the periphery of each opening, and the connection surface of the whole auxiliary cathode is realized through the lap joint with the top conductive layer, so that the reliability of the whole lap joint is improved.
Optionally, in an embodiment, as shown in fig. 1, the display panel further includes a protective layer 60, a first encapsulation layer 70 and a second encapsulation layer 80, where the protective layer 60 covers the cathode layer 23, the first conductive layer 41, the first insulating layer 42 and the cathode auxiliary layer 50, the first encapsulation layer 70 covers the protective layer 60 and the second insulating layer 44, an upper surface of the first encapsulation layer 70 is a flat structure, and the second encapsulation layer 80 is disposed on the first encapsulation layer 70.
After a single sub-pixel is formed by etching, an inorganic packaging mode is adopted to package and protect the single-color OLED material and the cathode to form an etching protection layer, then other luminescent layers and cathodes are prepared one by one, after the three-color luminescent layers and the cathodes are prepared, the three-color luminescent layers and the cathodes are integrally packaged in an organic packaging mode and an inorganic packaging mode, in one embodiment, the protection layer 60 adopts an inorganic packaging mode, the first packaging layer 70 adopts an organic packaging mode, and the second packaging layer 80 adopts an inorganic packaging mode.
Alternatively, in an embodiment, any packaging material may be used for the protective layer 60, the first packaging layer 70 and the second packaging layer 80, such as an inorganic packaging, an organic packaging and an inorganic-organic composite packaging, where the inorganic-organic composite packaging material has the advantages of good water-oxygen barrier property of the inorganic packaging material and good film forming property of the organic packaging material.
The present application also provides a method for manufacturing the display panel 100 to solve the above problems, which specifically includes the following steps:
Referring to fig. 4 and fig. 7a to fig. 7k, fig. 4 is a schematic flow chart of an embodiment of a method for manufacturing a display panel according to the present application. Fig. 7a to 7k are schematic structural diagrams corresponding to each step in the manufacturing method of the display panel provided in fig. 4.
Step S10, a substrate is provided.
Specifically, the substrate 10 plays a role of supporting in the entire display panel for carrying various components and materials.
Alternatively, in one embodiment, the substrate 10 includes a substrate (not shown) and a driving circuit (not shown), the display panel 100 of which is an active OLED, and in another embodiment, the substrate includes only the substrate and no driving circuit, and the display panel 100 of which is a passive OLED.
Specifically, in one embodiment, the substrate is made of a glass substrate, which is generally used as a carrier, and in another embodiment, the substrate is made of a flexible substrate, which is a flexible PI (polyimide) film.
The driving circuits described above can be divided into pixel driving circuits that mainly provide implementation conditions for continuous lighting of the panel, and peripheral driving circuits that provide accurate input signals for the matrix circuits of the panel, for example, scan signals (row driving signals) that provide row-by-row gating for the active matrix circuits, and data signals (column driving signals) with display information for the OLED pixels of the row-by-row. Therefore, the pixel driving circuit and the peripheral driving circuit complement each other and are tightly matched, and the normal operation of driving the active OLED display screen is completed together.
And step S12, forming an anode layer and a pixel defining layer on the substrate.
Specifically, as shown in fig. 7a, a corresponding desired metal layer is formed on the substrate as the anode layer material, wherein the material of the metal layer is selected from the group consisting of, but not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials and combinations thereof.
Alternatively, in one embodiment, as shown in fig. 7a, the pixel defining layer 30 is prepared above the etched anode layer 21 to block the anode layer 21 of the adjacent sub-pixel 20 by coating a first layer of photoresist over the metal layer and patterning the photoresist to leave a corresponding desired structure, and in one embodiment, the pixel defining layer 30 is formed to have a height perpendicular to the substrate direction higher than the anode layer 21 by coating a second layer of photoresist over the pixel defining layer 30 and patterning the photoresist to leave a corresponding desired structure. Wherein the pixel defining layer 30 employs an organic material including, but not limited to, polyimide, and the inorganic material of the pixel defining layer 30 includes, but is not limited to, silicon oxide (SiO 2), silicon nitride (Si 3N 4), silicon oxynitride (Si 2N 2O), magnesium fluoride (MgF 2), or a combination thereof. In another embodiment, a PDL material, which is a kind of pixel defining material for defining each sub-pixel so that colors between light emitting layers therein do not interfere with each other, is used as the material of the pixel defining layer 30.
The etching method comprises a wet etching or Dry etching (Dry etching) mode, wherein the Dry etching comprises laser etching or plasma etching. Wet etching includes chemical etching.
And S14, sequentially forming a first conductive layer, a first insulating layer, a second conductive layer and a second insulating layer on the pixel limiting layer, wherein a via hole is formed in the first insulating layer, and the first conductive layer is connected with the second conductive layer through the via hole.
Referring to fig. 5, fig. 5 is a schematic flow chart of the substeps of step S14 in fig. 4.
The substep of step S14 specifically includes the following steps:
And step 140, sequentially forming a first conductive layer and a first insulating layer on the pixel defining layer, wherein the first insulating layer comprises a main body part and a top part arranged on the main body part, and the top part extends out of the upper surface of the main body part to form a first overhang part.
Optionally, in an embodiment, as shown in fig. 7b, a conductive layer is deposited on the pixel defining layer 30 by physical vapor deposition, chemical vapor deposition, vacuum sputtering, or the like, a third layer of photoresist is coated on the conductive layer and patterned to remain the first conductive layer 41 structure on the pixel defining layer, where the material of the first conductive layer 41 is made of a metal oxide or an excessive metal oxide or other conductive material, such as a metal Molybdenum (MO), aluminum nitride (AlN), or the like.
Alternatively, in an embodiment, as shown in fig. 7c, a first insulating layer 42 is prepared over a first conductive layer 41, and a first overhang portion a is formed on the first insulating layer 42 by using a difference in etching rate of different materials to constitute an overhang structure. The material of the first insulating layer 42 may be a non-conductive organic material, including a negative photosensitive organic material. For example, negative photosensitive organic materials include, but are not limited to, negative photoresist.
Alternatively, in one embodiment, the first overhang structure formed by the first insulating layer 42 may be formed by converging, cross-linking and curing the irradiated portions of the negative photoresist during the exposure process, and non-irradiated portions may not be cross-linked and polymerized. The surface of the negative photoresist is easier to polymerize and crosslink, the illumination intensity of the part of the negative photoresist far away from the surface is gradually weakened, and the degree of polymerization and crosslinking of the negative photoresist is gradually weakened from the surface to the direction far away from the surface. In the developing process, the negative photoresist which is not crosslinked and polymerized is washed out, so that the overhang structure of the inverted trapezoid structure is obtained.
And S142, forming a via hole penetrating through the main body part and the top part on the first insulating layer.
Optionally, in an embodiment, as shown in fig. 7d, a via hole a may be formed on the first insulating layer 42 by etching, and the subsequent second conductive layer 43 is connected with the first conductive layer 41 through the via hole a, so as to increase the number of overlap interfaces between the cathode and the auxiliary cathode, and improve the reliability of the overlap interfaces.
Step S144, forming a second conductive layer on the first insulating layer, wherein the second conductive layer is connected with the first conductive layer through the via hole.
Optionally, in an embodiment, as shown in fig. 7e, a conductive layer is deposited over the first insulating layer 42 where the via a is formed by physical vapor deposition, chemical vapor deposition, or vacuum sputtering, so as to form the second conductive layer 43, where the second conductive layer 43 overlaps the bottom first conductive layer 41 through the via a. In one embodiment, second conductive layer 43 should be less than or equal to first conductive layer 41 in width of the cross section in consideration of the slope angle of the cathodic evaporation deposition.
Step S146, forming a second insulating layer on the second conductive layer, wherein the second insulating layer extends out of the upper surface of the second conductive layer to form a second overhang portion.
Alternatively, in an embodiment, as shown in fig. 7f, the second insulating layer 44 is formed above the second conductive layer 43 by deposition or the like, wherein the forming manner of the second insulating layer 44 is the same as that of the first insulating layer 42, and will not be described herein. In one embodiment, the length of the second overhang b of the second insulating layer 44 is equal to the length of the first overhang a of the first insulating layer 42.
And S16, sequentially forming a light-emitting layer and a cathode layer on the anode layer, forming a cathode auxiliary layer on the isolation structure, wherein the cathode auxiliary layer is connected with the second conductive layer, the anode layer, the light-emitting layer and the cathode layer form sub-pixels, and the cathode layers of two adjacent sub-pixels are connected through the first conductive layer.
Referring to fig. 6, fig. 6 is a schematic flow chart of the substeps of step S16 in fig. 4.
The substep of step S16 specifically includes the following steps:
step S160, forming a light emitting layer on the anode layer and forming an organic layer on the side surface of the first overhang portion.
Specifically, since the colors of the light emitted from the different sub-pixels 20 are different, the materials of the light emitting layers 22 in the different sub-pixels 20 are different, and it is necessary to manufacture the sub-pixels 20 that emit the light of different colors in different steps. The light emitting layer 22 includes, but is not limited to, a red light emitting layer (not shown), a green light emitting layer (not shown), and a blue light emitting layer (not shown). The sequence of the specifically formed red light-emitting layer, green light-emitting layer and blue light-emitting layer is set according to actual conditions. For example, a red light emitting layer is formed first, then a green light emitting layer is formed, and finally a blue light emitting layer is formed.
Alternatively, in an embodiment, as shown in fig. 7g, the light emitting layer 22 is formed by evaporation deposition, but due to the protruding portions of the overhang structure, the first overhang portion a and the second overhang portion b, a film break of the light emitting layer occurs at the protruding portions, so that the light emitting layer at the lower breaking face overlaps the pixel defining layer 30 but is not in contact connection with the first conductive layer 41, and the upper breaking face forms the organic layer c at the first overhang portion a of the first insulating layer 42.
And S162, forming a cathode layer on the light emitting layer, and forming a cathode auxiliary layer on the upper surface, the side surface and the lower surface of the second overhang portion, the side surface of the second conductive layer, and the upper surface and the side surface of the first overhang portion.
Alternatively, in an embodiment, as shown in fig. 7h, the cathode layer 23 and the cathode auxiliary layer 50 are formed by evaporation deposition over the light emitting layer 22. The reason why the light emitting layer 22 is formed is the same as that why the cathode is broken at the protruding portion due to the protruding portion first overhang portion a and the second overhang portion b of the overhang structure, in an embodiment, the light emitting layer 22 is isolated from the first conductive layer 41 by wrapping the cathode at the lower breaking portion by changing the evaporation angle, and the cathode layer 23 is directly connected to the first conductive layer 41, so that the cathode layers 23 of different sub-pixels 20 are connected through the first conductive layer 41 to form a mesh connection of cathodes between different sub-pixels, wherein the first conductive layer 41 is higher than the cathode layer 23 in the direction perpendicular to the substrate. The cathode at the upper fracture is deposited along the double overhang structure constructed by the first insulating layer 42 and the second insulating layer 44 to form the cathode auxiliary layer 50 on the upper surface, the side surface and the lower surface of the second overhang part b, the side surface of the second conductive layer 43, and the upper surface and the side surface of the first overhang part a, and the cathode auxiliary layer 50 is in lap joint conduction with the side surface of the second conductive layer 43, thereby realizing the overall conduction of the cathode auxiliary layer 50 and the second conductive layer 43, the first conductive layer 41 and the cathode layer 23, increasing the reliability of cathode connection, effectively reducing the overall resistance of the cathode, and improving the overall uniformity of the cathode.
Optionally, in an embodiment, the above manufacturing method further includes packaging the display panel, as shown in fig. 7i, by first performing packaging protection on the single-color OLED material and the cathode, then preparing the other light emitting layers and the cathode one by one, as shown in fig. 7j and fig. 7k, after patterning the three-color organic light emitting layer and the cathode, performing overall packaging in a manner of combining organic packaging and inorganic packaging, where the protective layer 60 adopts an inorganic packaging, the first packaging layer 70 adopts an organic packaging, and the second packaging layer 80 adopts an inorganic packaging.
The application provides a display panel. According to the display panel and the display panel manufactured by the manufacturing method, the double overhang structure is added on the overhang structure base, so that the cathode forms the netlike auxiliary cathode on the top overhang structure, the bottom cathode and the auxiliary cathode are connected through the metal column, uniformity of the whole cathode is improved, the area of the cathode is increased, the cathode resistance is reduced, IR Drop caused by larger cathode resistance is further reduced, and the phenomenon of uneven display brightness is improved.
Referring to fig. 8, fig. 8 is a schematic structural diagram of a display device according to an embodiment of the application. The display device 200 includes any one of the display panels 100 described in the above embodiments or the display panel 100 manufactured by the above manufacturing method to provide a stable picture output to the display device 200 through the display panel 100.
The foregoing has outlined rather broadly the more detailed description of embodiments of the application, wherein the principles and embodiments of the application are explained in detail using specific examples, the above examples being provided solely to facilitate the understanding of the method and core concepts of the application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.
Claims (8)
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| CN113451528B (en) * | 2021-06-29 | 2022-11-11 | 合肥鑫晟光电科技有限公司 | Display panel, manufacturing method thereof and display device |
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| CN109065751A (en) * | 2018-07-25 | 2018-12-21 | 武汉华星光电技术有限公司 | Display module and electronic device |
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