CN117750826A - Display panel and manufacturing method thereof - Google Patents

Abstract

The application provides a display panel and a manufacturing method thereof, wherein the display panel comprises: a substrate; a plurality of sub-pixels disposed on the substrate; the pixel limiting layer is arranged on the substrate and used for limiting the positions of the plurality of sub-pixels; a cathode lead disposed in a display region of the display panel and between the substrate and the pixel defining layer; the separation auxiliary structure is arranged on the pixel limiting layer and comprises a cathode auxiliary layer, and the cathode layers of two adjacent sub-pixels are connected through the cathode auxiliary layer; wherein, be provided with the through-hole on the pixel limiting layer, the cathode auxiliary layer passes through the through-hole and connects the cathode lead. By the method, the separation auxiliary structure is added in the display area, and the cathode overlap area at two sides of the display screen is removed, so that the display uniformity of the panel is realized, and the display panel has a narrower frame.

Description

Display panel and manufacturing method thereof

Technical Field

The application relates generally to the field of display technology, and more particularly, to a display panel and a manufacturing method thereof.

Background

In the current panel display manufacturing, the cathode of the organic light emitting semiconductor (OLED, organic Electroluminescence Display) is a whole surface evaporation method, the evaporated whole surface material is used as the cathode to conduct electricity, and the connection between the cathode and the driving chip is that the front of the display screen is provided with overlapping areas at the left and right sides of the display screen, and the cathode overlapping block is connected with the cathode lead wire by utilizing the cathode overlapping block, and the cathode lead wire is connected with the driving chip to form the conduction of the circuit of the cathode, thereby realizing the display function of the picture.

Since the overlap area is set on both sides and needs to meet the requirement of sufficient contact between the cathode and the cathode lead to avoid impedance, the overlap area generally needs to occupy a certain space area of the display panel, so that the panel frame is wider and thicker, but with the increasing iterative upgrade of products and the increasing requirement of the client for the narrow frame of the display screen of the mobile terminal, such as mobile phones, flat panel and other electronic devices, a narrow frame or even a display screen without frame is required to meet the requirement of users and the development trend of the display screen.

Disclosure of Invention

The application aims at providing a display panel and a manufacturing method thereof to solve the problem that a traditional display screen is wide and thick in frame.

To solve the above problems, the present application provides a display panel, including: a substrate; a plurality of sub-pixels disposed on the substrate; the pixel limiting layer is arranged on the substrate and used for limiting the positions of the plurality of sub-pixels; a cathode lead disposed in a display region of the display panel and between the substrate and the pixel defining layer; the separation auxiliary structure is arranged on the pixel limiting layer and comprises a cathode auxiliary layer, and the cathode layers of two adjacent sub-pixels are connected through the cathode auxiliary layer; wherein, be provided with the through-hole on the pixel limiting layer, the cathode auxiliary layer passes through the through-hole and connects the cathode lead.

In one embodiment, the cathode leads are disposed along the column direction of the subpixels; the cathode auxiliary layer comprises a column auxiliary layer which is arranged along the column direction of the sub-pixel and corresponds to the cathode lead, and a row auxiliary layer which is arranged along the row direction of the sub-pixel, wherein the first column auxiliary layer is connected with the row auxiliary layer.

In an embodiment, the column auxiliary layer comprises adjacent first and second auxiliary layers, the row auxiliary layer comprises adjacent third and fourth auxiliary layers, and the first, third, second and fourth auxiliary layers are connected end to end in sequence.

In an embodiment, the column auxiliary layer comprises adjacent first, second and fifth auxiliary layers, the row auxiliary layer comprises adjacent third and fourth auxiliary layers, the first, third, second and fourth auxiliary layers are connected end to end in sequence, and the fifth auxiliary layer connects the third and fourth auxiliary layers.

In one embodiment, the separation auxiliary structure includes a cathode auxiliary layer and an insulating layer sequentially stacked, the insulating layer having a width greater than a width of the cathode auxiliary layer.

In one embodiment, the sub-pixel includes an anode layer, an organic light emitting layer, and a cathode layer sequentially stacked, wherein the cathode layer is in contact connection with the cathode auxiliary layer at least in one direction.

In order to solve the above problems, the present application further provides a method for manufacturing a display panel, where the method for manufacturing a display panel includes: providing a substrate; forming an anode layer and a cathode lead on a substrate; forming a pixel defining layer on the cathode lead and the substrate; forming a through hole on the pixel defining layer to expose a portion of the cathode lead; forming a separation auxiliary structure on the pixel defining layer, the separation auxiliary structure including a cathode auxiliary layer connected with the cathode lead through a through hole; sequentially forming an organic light emitting layer and a cathode layer on the anode layer; wherein the anode layer, the organic light-emitting layer and the cathode layer form sub-pixels, and the cathode layers of two adjacent sub-pixels are connected through the cathode auxiliary layer.

In one embodiment, forming an anode layer and a cathode lead on a substrate includes: forming a conductive layer on a substrate; the conductive layer is etched to form an anode layer and a cathode lead.

In one embodiment, a separation auxiliary structure is formed on a pixel defining layer, the separation auxiliary structure including a cathode auxiliary layer connected to a cathode lead through a via hole, comprising: forming a cathode auxiliary layer on the pixel defining layer, the cathode auxiliary layer being connected with the cathode lead through a through hole; an insulating layer is formed on the cathode auxiliary layer, wherein a width of the insulating layer is greater than a width of the cathode auxiliary layer.

In order to solve the above-mentioned problems, the present application also provides a display device employing a display panel including any one of the display panels described above or a display panel obtained by employing any one of the fabrication methods described above.

The application provides a display panel, this display panel includes: a substrate; a plurality of sub-pixels disposed on the substrate; the pixel limiting layer is arranged on the substrate and used for limiting the positions of the plurality of sub-pixels; a cathode lead disposed in a display region of the display panel and between the substrate and the pixel defining layer; the separation auxiliary structure is arranged on the pixel limiting layer and comprises a cathode auxiliary layer, and the cathode layers of two adjacent sub-pixels are connected through the cathode auxiliary layer; wherein, be provided with the through-hole on the pixel limiting layer, the cathode auxiliary layer passes through the through-hole and connects the cathode lead.

Through the display panel and the manufacturing method thereof, the separation auxiliary structure is designed and built in the display panel, the cathode auxiliary layer in the separation auxiliary structure is connected with the cathode lead through the through hole, the cathode auxiliary layer is connected with the cathode in a lap joint mode, the cathode lead is connected with the driving chip, mutual conduction of all parts is achieved, display control conditions of the display panel are completed, cathode lap joint areas in the display panel in the original design are removed, the occupied area of left and right cathode lap joint areas in the panel is further reduced, uniform display of pictures and a display panel structure with narrower frames are achieved, the use requirements of users are met, and a direction is provided for manufacturing of the subsequent further borderless panel.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein:

fig. 1 is a schematic plan view of a first embodiment of a display panel provided in the present application;

FIG. 2 is a schematic view of a first position structure of an embodiment of a display panel provided in the present application;

FIG. 3 is a schematic view of a second position structure of an embodiment of a display panel provided in the present application;

FIG. 4 is a schematic view of a third position structure of an embodiment of a display panel provided in the present application;

fig. 5 is a schematic plan view of a second embodiment of a display panel provided in the present application;

fig. 6 is a schematic plan view of a third embodiment of a display panel provided in the present application;

FIGS. 7a to 7g are schematic views illustrating the structure of steps of an embodiment of a method for fabricating a display panel according to the present application;

FIG. 8 is a flowchart illustrating steps of an embodiment of a method for fabricating a display panel according to the present disclosure;

FIG. 9 is a schematic flow chart of the substeps of step S11 in FIG. 8;

FIG. 10 is a schematic flow chart of the substeps of step S14 in FIG. 8;

fig. 11 is a schematic structural diagram of an embodiment of a display device provided in the present application.

Reference numerals: 100. a display panel; 10. a substrate; 20. a sub-pixel; 21. an anode layer; 22. an organic light emitting layer; 23. a cathode layer; 30. a pixel defining layer; 40. a cathode lead; 50. a separation auxiliary structure; 51. an insulating layer; 52. a cathode auxiliary layer; 200. a display device; A. a through hole; a. a first auxiliary layer; b. a second auxiliary layer; c. a third auxiliary layer; d. a fourth auxiliary layer; e. a fifth auxiliary layer; f. and a sixth auxiliary layer.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not limiting. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present application are shown in the drawings. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

The terms "first," "second," and the like in this application are used for distinguishing between different objects and not for describing a particular sequential order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

In the current electronic devices which are increasingly developed, the requirements of users on the use of the devices and the requirements on the appearance and the use appearance of the devices are higher, so that the display devices with narrower frames or even display screens without frames are required by the users and the development direction of the current display screens are corresponding to the display devices on the current market.

Referring to fig. 1, fig. 2, fig. 3 and fig. 4, fig. 1 is a schematic plan view of a first embodiment of a display panel provided in the present application; FIG. 2 is a schematic view of a first position structure of an embodiment of a display panel provided in the present application; FIG. 3 is a schematic view of a second position structure of an embodiment of a display panel provided in the present application; fig. 4 is a schematic view of a third position structure of an embodiment of a display panel provided in the present application. Wherein, the display panel 100 includes: a substrate 10, sub-pixels 20, a pixel defining layer 30, cathode leads 40, and a separation auxiliary structure 50. More specifically, in the display panel 100, a plurality of sub-pixels 20 are disposed on a substrate 10; the pixel defining layer 30 is disposed on the substrate 10, and the pixel defining layer 30 is used for defining positions of the plurality of sub-pixels 20; the cathode lead 40 is disposed in the display region A-A of the display panel 100 and between the substrate 10 and the pixel defining layer 30; the separation auxiliary structure 50 is disposed on the pixel defining layer 30, the separation auxiliary structure 50 includes a cathode auxiliary layer 52, and the cathode layers 23 of adjacent two sub-pixels 20 are connected through the cathode auxiliary layer 52; wherein the pixel defining layer 30 is provided with a through hole a, and the cathode auxiliary layer 52 is connected to the cathode lead 40 through the through hole a. Referring to fig. 1, the display area A-A is inside the dashed box in fig. 1.

In the above display panel, the cathode auxiliary layer 52 is connected with the cathode lead 40 through the through hole a, the cathode lead 40 is connected to the driving chip, so as to realize the overall driving control of the display panel, and the cathode overlap areas on the left and right sides in the original display panel are removed by arranging the cathode lead 40 in the display area, so that the frame area of the display panel is reduced, the smaller narrow frame of the display is realized, and good directional extension is provided for the subsequent frameless design.

Alternatively, in an embodiment, as shown in fig. 2, the sub-pixel 20 includes an anode layer 21, an organic light emitting layer 22, and a cathode layer 23 sequentially stacked, wherein the cathode layer 23 is in contact connection with the cathode auxiliary layer 52 at least in one direction.

Wherein the plurality of sub-pixels 20 comprise corresponding three primary colors of red, green and blue (RGB), i.e. each intermediate color in each pixel is called one sub-pixel 20, each sub-pixel 20 emitting a different color of light, e.g. red, blue or green light, upon energization through the organic light emitting layer 22 therein.

The anode material of the anode layer 21 is mainly used as the anode of the device, and its work function is required to be as high as possible in order to improve hole injection efficiency, and the anode material is selected from chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials.

The cathode material of the cathode layer 23 is mainly used as a cathode of the device, and the lower the metal work function of the cathode material, the easier the electron injection, the higher the luminous efficiency, the less joule heat generated in operation, and the longer the device life. The cathode layer 23 material includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials; the materials of the cathode layer 23 and the anode layer 21 may be the same material or different materials, and are set according to actual requirements.

The organic light emitting layer 22 may include: one or more of HIL (Hole Injection Layer ), HTL (Hole Transfer Layer, hole transport Layer), EML (emission Layer), and ETL (Electron Transfer Layer ).

Among them, the organic light emitting materials in the organic light emitting layer 22 are generally classified into two main types: high molecular polymer, small molecular organic matter and complex luminescent material; the high molecular polymer is usually conductive conjugated polymer or semiconductor conjugated polymer, can be formed into film by spin coating method, has simple preparation and low cost, but the purity of the high molecular polymer is not easy to be improved, and the high molecular polymer is inferior to that of small molecular organic compound in terms of durability, brightness and color. The organic small molecule luminescent material is mainly organic dye, has the advantages of strong chemical modification, wide selection range, easy purification, high quantum efficiency, capability of generating various color emission peaks of red, green, blue, yellow and the like, but most of the organic small molecule luminescent materials have the problems of concentration quenching and the like in the solid state. The complex luminescent material is arranged between the organic and inorganic matters, has high fluorescence quantum efficiency of the organic matters and high stability of the inorganic matters, and is regarded as a luminescent material with very good application prospect.

Optionally, in an embodiment, further referring to fig. 1, it is understood that fig. 2 is a schematic cross-sectional view of the position 3A-3A in fig. 1, fig. 3 is a schematic cross-sectional view of the position 3B-3B in fig. 1, and fig. 4 is a schematic cross-sectional view of the position 3C-3C in fig. 1; wherein the cathode lead 40 is arranged in the column direction of the sub-pixel 20; the cathode auxiliary layer 52 includes a column auxiliary layer disposed along a column direction of the sub-pixel 20 and corresponding to the cathode lead 40, and a row auxiliary layer disposed along a row direction of the sub-pixel 20, the first column auxiliary layer being connected to the row auxiliary layer.

Optionally, in an embodiment, as shown in fig. 1, the column auxiliary layer includes a first auxiliary layer a and a second auxiliary layer b adjacent to each other, the row auxiliary layer includes a third auxiliary layer c and a fourth auxiliary layer d adjacent to each other, and the first auxiliary layer a, the third auxiliary layer c, the second auxiliary layer b, and the fourth auxiliary layer d are connected end to end in sequence. The number and distribution form of the sub-pixels selected and set in the middle row auxiliary layer and the column auxiliary layer according to the corresponding frames are set according to actual setting requirements, and are not limited in detail herein.

Optionally, in an embodiment, as shown in fig. 5, fig. 5 is a schematic plan view of a second embodiment of a display panel provided in the present application; the row auxiliary layer comprises a third auxiliary layer c and a fourth auxiliary layer d which are adjacent, the first auxiliary layer a, the third auxiliary layer c, the second auxiliary layer b and the fourth auxiliary layer d are sequentially connected end to end, and the fifth auxiliary layer e is connected with the third auxiliary layer c and the fourth auxiliary layer d. The number and distribution form of the sub-pixels selected and set in the middle row auxiliary layer and the column auxiliary layer according to the corresponding frames are set according to actual setting requirements, and are not limited in detail herein.

Optionally, in an embodiment, as shown in fig. 6, fig. 6 is a schematic plan view of a third embodiment of a display panel provided in the present application; the row auxiliary layer comprises a third auxiliary layer c, a fourth auxiliary layer d and a sixth auxiliary layer f which are adjacent, the first auxiliary layer a, the third auxiliary layer c, the second auxiliary layer b and the fourth auxiliary layer d are sequentially connected end to end, the fifth auxiliary layer e and the sixth auxiliary layer f are in cross connection, the fifth auxiliary layer e is connected with the third auxiliary layer c and the fourth auxiliary layer d, and the sixth auxiliary layer f is connected with the first auxiliary layer a and the second auxiliary layer b. The number and distribution form of the sub-pixels selected and set in the middle row auxiliary layer and the column auxiliary layer according to the corresponding frames are set according to actual setting requirements, and are not limited in detail herein.

Optionally, in an embodiment, the corresponding column auxiliary layers and row auxiliary layers may be set for structures set in more directions, and may be set according to different requirements and schemes by using different numbers and positions of column auxiliary layers and different numbers and positions of row auxiliary layers, or may even use column auxiliary layers and row auxiliary layers to surround each pixel structure, so that the whole separation auxiliary structure 50 is connected to form a cross-conducting network structure, and is connected to the cathode lead 40 through the through hole a, which is not limited in detail herein.

Optionally, in an embodiment, the number and positions of the cathode lead 40 and the through hole a corresponding to the above-described structure may be set according to different requirements and schemes, so that the resistance of the cathode as a whole is smaller, which is not limited herein.

Alternatively, in an embodiment, the separation auxiliary structure 50 includes a cathode auxiliary layer 52 and an insulating layer 51 sequentially stacked, and the insulating layer 51 has a width greater than that of the cathode auxiliary layer 52. In the process of evaporation, the insulating layer 51 may have an inverted trapezoid structure by adjusting the evaporation angle so that the width of the insulating layer is larger than that of the cathode auxiliary layer 52 at the lower part, as shown in fig. 1, and the specific structure is that of the subsequent manufacturing of other material structures.

The material of the organic light emitting layer 22 is evaporated by using a mask, and the light emitting material of the sub-pixel 20 is evaporated by using an FMM, wherein the evaporation angle is controlled when the organic material is evaporated, and the evaporated organic material is not in contact with the cathode auxiliary layer 52 in the lower half of the separation auxiliary structure 50 or only in contact with the cathode auxiliary layer 52 due to the fact that the cross-sectional width of the upper insulating layer 51 of the separation auxiliary structure 50 is larger than that of the lower cathode auxiliary layer 52. The structural design enables the separation between the adjacent organic materials so as to avoid the problem of short circuit caused by direct conduction between different sub-pixels 20.

Optionally, in an embodiment, after the cathode is fabricated, the entire display device is further encapsulated, where the encapsulation may be a first encapsulation layer (not shown) performed between the individual pixels and a second encapsulation layer (not shown) performed on the entire display panel, so as to better protect the entire display panel.

The traditional OLED packaging technology is to manufacture electrodes and package organic functional layers on a rigid substrate, generally, a cover plate is added to a device, a desiccant is attached to the device, and then the substrate and the cover plate are combined through sealant such as epoxy resin; the thin film packaging is a mainstream technology of the current packaging, and the thin film packaging material is mainly divided into an inorganic packaging material, an organic packaging material and an inorganic-organic composite packaging material, wherein the inorganic-organic composite packaging material has the advantages of good water-oxygen barrier property of the inorganic packaging material and good film forming property of the organic packaging material, and is a mainstream choice of the OLED packaging material. The key core material of OLED devices is an ultra-thin organic electroluminescent layer, which is extremely sensitive to water, oxygen, and heat, which is also responsible for its poor stability. Oxygen quenches triplet excitons, directly resulting in a significant decrease in the luminescence quantum efficiency. Organic materials of the hole transport layer and the light emitting layer are also oxidized, resulting in the opening of unsaturated double bonds, and the reduction of light emitting efficiency and electron hole transport capability of the device. The water vapor readily hydrolyzes the organic semiconductor in the light-emitting layer. The metal used for the electrode is very reactive, and is easily oxidized and easily hydrolyzed by reacting with the permeated water vapor. Because of the specificity of the substrate material, the water-oxygen barrier capability of the flexible device is poorer than that of the rigid material, and the packaging requirement is higher. The OLED device is strictly packaged, is a necessary condition for prolonging the service life of the device and improving the stability of the device, and is a necessary way for realizing mass production of the OLED device.

Alternatively, in an embodiment, as shown in fig. 1, 5 and 6, the pixel 6*6 in the schematic diagram is merely an example, and in other embodiments, the specification may be 1920×1080, 2560×1440, 3840×2160, and the like, which is not limited herein. 1920×1080 refers to 1920 pixels multiplied by 1080 pixels, i.e. the number of horizontal and vertical pixels, and pixels refer to pixels forming the whole image, for example, if a picture is formed by N multiple points, 1920 is the number of pixels in the horizontal direction, 1080 is the number of pixels in the vertical direction, 1080 pixels are arranged in the vertical direction of the display, which may be called 1080P, 1920 pixels are arranged in the horizontal direction, 1920 is close to 2000, and can be represented by 2K, corresponding to the 1920×1080 specification, and the ratio is 1920:1080, i.e. 16:9 specification.

Alternatively, in an embodiment, as shown in fig. 1, 5 and 6, the pixels are arranged in a conventional manner of strip, and in other embodiments, the pixels may be arranged in a zig-zag arrangement or an SPR arrangement, and other various pixel arrangements are not limited herein.

In order to solve the above-mentioned problems, the present application further provides a method for manufacturing a display panel, specifically referring to fig. 7a to 7g and fig. 8, wherein fig. 7a to 7g are schematic step structures of an embodiment of the method for manufacturing a display panel provided in the present application; FIG. 8 is a flowchart illustrating steps of an embodiment of a method for fabricating a display panel according to the present disclosure; the manufacturing method of the display panel specifically comprises the following steps:

step S10: a substrate is provided.

Alternatively, in an embodiment, as shown in fig. 7a, the substrate 10 serves to support the whole panel in the display panel, and the materials of the package substrate may include a hard package substrate and a flexible package substrate, and the materials may include, but are not limited to, BT material, ABF material, MIS material, PI (polyimide) and PE (polyester) resin, or a combination thereof.

Step S11: an anode layer and a cathode lead are formed on a substrate.

As shown in fig. 9, fig. 9 is a schematic flow chart of the substeps of step S11 in fig. 8, wherein the specific substeps of step S11 include the following steps:

step S110: a conductive layer is formed on a substrate.

Alternatively, in one embodiment, as shown in FIG. 7a, the conductive layer 60 is formed by a method including, but not limited to, physical vapor deposition (evaporation, sputtering, ion plating, arc plating, plasma plating) and chemical vapor deposition, and the material of the conductive layer 60 may be chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof or other suitable conductive materials and combinations thereof, which are set according to practical situations or requirements.

Step S112: the conductive layer is etched to form an anode layer and a cathode lead.

Alternatively, in one embodiment, as shown in fig. 7b, a common metal layer is used as cathode lead 40 (or another metal layer is used as cathode lead 40) when anode layer 21 is fabricated. It is formed by Etching it by means of Wet Etching (Wet Etching) and Dry Etching (Dry Etching).

Step S12: a pixel defining layer is formed on the cathode lead and the substrate.

As shown in fig. 7c, the pixel defining layer 30 is used as a structural component in the OLED display panel, and can be configured to cooperate with the overall display, such as improving the pixel display effect, simplifying the manufacturing process, reducing the panel thickness, improving the device yield, and the like.

Alternatively, in an embodiment, the material of the pixel defining layer 30 may be one of an organic material, an organic material having an inorganic coating layer disposed thereon, or an inorganic material. The organic material of the pixel defining layer 30 includes, but is not limited to, polyimide. The inorganic material of the pixel defining layer 30 includes, but is not limited to, silicon oxide (SiO 2), silicon nitride (Si 3N 4), silicon oxynitride (Si 2N 2O), magnesium fluoride (MgF 2), or a combination thereof.

Step S13: a via is formed in the pixel defining layer to expose a portion of the cathode lead.

Alternatively, in one embodiment, as shown in fig. 7d, the through hole a is formed by etching, and specifically, the etching may be performed in the form of a photoresist, wherein the photoresist is a pattern transferring medium, and the pattern of the mask is transferred onto the substrate by using different solubility after the photoreaction. At present, the method is widely used for processing and manufacturing micro pattern circuits in the photoelectric information industry, and is a key material in the field of electronic manufacturing. The photoresist is generally composed of a photosensitive agent (photoinitiator), a photosensitive resin, a solvent and an auxiliary agent, wherein the photoinitiator is a core component and plays a decisive role in the sensitivity and resolution of the photoresist. The photoresist may be divided into a positive photoresist and a negative photoresist according to a chemical reaction principle, and in other embodiments, the through hole a may be formed in other manners, and the manner of forming the through hole a is not particularly limited herein.

Step S14: and forming a separation auxiliary structure on the pixel defining layer, wherein the separation auxiliary structure comprises a cathode auxiliary layer, and the cathode auxiliary layer is connected with a cathode lead through a through hole.

Optionally, in an embodiment, a separation auxiliary structure 50 is formed on the pixel defining layer 30, the separation auxiliary structure 50 includes a cathode auxiliary layer 52, and a sub-step is further included in connection with the cathode lead 40 through the via a of the cathode auxiliary layer 52, as shown in fig. 10, fig. 10 is a schematic flow chart of the sub-step of the step S14 in fig. 8, wherein the specific sub-step of the step S14 includes the following steps:

step S140: forming a cathode auxiliary layer on the pixel defining layer, the cathode auxiliary layer being connected with the cathode lead through a through hole;

alternatively, in an embodiment, as shown in fig. 7e, the materials of the cathode auxiliary layer 52 may include, but are not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials and combinations thereof, where the materials of the anode layer 21, the cathode layer 23, and the cathode auxiliary layer 52 may be the same or different, and the specific situation is set according to the actual requirement, and is not limited herein.

Step S142: an insulating layer is formed on the cathode auxiliary layer, wherein the width of the insulating layer is greater than the width of the conductive layer.

Alternatively, in an embodiment, as shown in fig. 7f, the material of the insulating layer 51 may be, but not limited to, silicon monoxide (SiO), silicon dioxide (SiO 2), silicon nitride (SiNx), silicon oxynitride (SiNO), etc., and the etching rates of the different materials are different to form an inverted trapezoid shape, which is specifically set according to the actual requirement, and is not specifically limited herein.

Optionally, in an embodiment, the insulating layer 51 may have an inverted trapezoid structure by adjusting an evaporation angle and the like during evaporation so that the width of the insulating layer is greater than that of the lower cathode auxiliary layer 52; in other embodiments, other ways may be adopted to realize that the width of the insulating layer 51 is greater than the width of the cathode auxiliary layer 52, which is not specifically limited herein.

Step S15: sequentially forming an organic light emitting layer and a cathode layer on the anode layer; wherein the anode layer, the organic light-emitting layer and the cathode layer form sub-pixels, and the cathode layers of two adjacent sub-pixels are connected through the cathode auxiliary layer.

Alternatively, in an embodiment, as shown in fig. 7g, the mask openings for evaporation of the cathode layer 23 and the large-opening mask openings for evaporation of the organic light emitting layer 22 may be made the same, and the same large-opening metal mask (CMM, common metal mask) is shared, so as to achieve the purpose of saving masks. The mask is also commonly called as a photomask, a photomask and a photoetching mask, is a carrier of a design pattern in the photoetching process of a semiconductor chip, and realizes the transfer of the pattern onto a silicon wafer through photoetching and etching. Different glass substrates are generally selected according to different requirements, quartz glass with low thermal expansion coefficient, low sodium content, high chemical stability, high light penetrability and the like is generally selected as a main stream, and an opaque chromium film with the thickness of about 100nm and chromium oxide with the thickness of about 20nm are plated on the quartz glass to reduce light reflection.

Optionally, in an embodiment, after the cathode is fabricated, the entire display device is further encapsulated, and the specific form and materials of the encapsulation are the same as those described in the above structure, which is not described herein.

In order to solve the above-mentioned problems, the present application further provides a display device, and referring to fig. 11, fig. 11 is a schematic structural diagram of an embodiment of the display device provided in the present application. The display device 200 includes any one of the display panels 100 described in the above embodiments or the display panel 100 manufactured by the above manufacturing method to provide a stable picture output to the display device 200 through the display panel 100.

The application provides a display panel, this display panel includes: a substrate 10, sub-pixels 20, a pixel defining layer 30, cathode leads 40, and a separation auxiliary structure 50. More specifically, in the display panel, a plurality of sub-pixels 20 are disposed on a substrate 10; the pixel defining layer 30 is disposed on the substrate 10, and the pixel defining layer 30 is used for defining positions of the plurality of sub-pixels 20; the cathode lead 40 is disposed in the display region of the display panel and between the substrate 10 and the pixel defining layer 30; the separation auxiliary structure 50 is disposed on the pixel defining layer 30, the separation auxiliary structure 50 is used for isolating the plurality of sub-pixels 20, the separation auxiliary structure 50 includes a cathode auxiliary layer 52, and the cathode layers 23 of two adjacent sub-pixels 20 are connected through the cathode auxiliary layer 52; wherein the pixel defining layer 30 is provided with a through hole a, and the cathode auxiliary layer 52 is connected to the cathode lead 40 through the through hole a.

Through the display panel and the manufacturing method thereof, the separation auxiliary structure 50 is designed and built in the display panel 100, the cathode auxiliary layer 52 in the separation auxiliary structure 50 is connected with the cathode lead 40 by the through hole A, the cathode auxiliary layer 52 is in lap joint with the cathode layer 23, the cathode lead 40 is connected with the driving chip, the mutual conduction of all parts is realized, the display control condition of the display panel 100 is completed, the cathode lap joint area in the display panel in the original design is removed, the occupied area of the left and right cathode lap joint areas in the panel is further reduced, the uniform display of pictures and the display panel structure with narrower frames are realized, the use requirement of users is met, and the direction is provided for the subsequent manufacture of the further borderless panel.

The foregoing has outlined rather broadly the more detailed description of embodiments of the present application, wherein specific examples are provided herein to illustrate the principles and embodiments of the present application, the above examples being provided solely to assist in the understanding of the methods of the present application and the core ideas thereof; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.

Claims (10)

1. A display panel, the display panel comprising:

a substrate;

a plurality of sub-pixels disposed on the substrate;

a pixel defining layer disposed on the substrate, the pixel defining layer being configured to define positions of a plurality of the sub-pixels;

a cathode lead disposed in a display region of the display panel and between the substrate and the pixel defining layer;

the separation auxiliary structure is arranged on the pixel limiting layer and comprises a cathode auxiliary layer, and the cathode layers of two adjacent sub-pixels are connected through the cathode auxiliary layer;

and the pixel limiting layer is provided with a through hole, and the cathode auxiliary layer is connected with the cathode lead through the through hole.

2. The display panel according to claim 1, wherein the cathode lead is arranged along a column direction of the sub-pixels;

the cathode auxiliary layer comprises a column auxiliary layer which is arranged along the column direction of the sub-pixel and corresponds to the cathode lead, and a row auxiliary layer which is arranged along the row direction of the sub-pixel, wherein the column auxiliary layer is connected with the row auxiliary layer.

3. The display panel of claim 2, wherein the column auxiliary layer comprises adjacent first and second auxiliary layers, the row auxiliary layer comprises adjacent third and fourth auxiliary layers, and the first, third, second, and fourth auxiliary layers are connected end-to-end in sequence.

4. The display panel of claim 2, wherein the column auxiliary layer includes adjacent first, second, and fifth auxiliary layers, the row auxiliary layer includes adjacent third and fourth auxiliary layers, the first, third, second, and fourth auxiliary layers are connected end-to-end in sequence, and the fifth auxiliary layer connects the third and fourth auxiliary layers.

5. The display panel according to claim 1, wherein the separation auxiliary structure includes the cathode auxiliary layer and an insulating layer sequentially stacked, the insulating layer having a width larger than that of the cathode auxiliary layer.

6. The display panel according to claim 1, wherein the sub-pixel includes an anode layer, an organic light emitting layer, and a cathode layer formed sequentially, wherein the cathode layer is in contact connection with the cathode auxiliary layer at least in one direction.

7. The manufacturing method of the display panel is characterized by comprising the following steps of:

providing a substrate;

forming an anode layer and a cathode lead on the substrate;

forming a pixel defining layer on the cathode lead and the substrate;

forming a through hole on the pixel defining layer to expose a portion of the cathode lead;

forming a separation auxiliary structure on the pixel defining layer, the separation auxiliary structure including a cathode auxiliary layer connected to the cathode lead through the via hole;

sequentially forming an organic light-emitting layer and a cathode layer on the anode layer; the anode layer, the organic light-emitting layer and the cathode layer form sub-pixels, and the cathode layers of two adjacent sub-pixels are connected through the cathode auxiliary layer.

8. The method of manufacturing a display panel according to claim 7, wherein forming an anode layer and a cathode lead on the substrate comprises:

forming a conductive layer on the substrate;

etching the conductive layer to form the anode layer and the cathode lead.

9. The method of manufacturing a display panel according to claim 7, wherein the forming a separation auxiliary structure on the pixel defining layer, the separation auxiliary structure including a cathode auxiliary layer connected to the cathode lead through the via hole, comprises:

forming a cathode auxiliary layer on the pixel defining layer, the cathode auxiliary layer being connected to the cathode lead through the via hole;

and forming an insulating layer on the cathode auxiliary layer, wherein the width of the insulating layer is greater than that of the cathode auxiliary layer.

10. A display device comprising the display panel according to any one of claims 1 to 6 or a display panel manufactured by the manufacturing method of the display panel according to any one of claims 7 to 9.