CN116496000A - 层叠体和层叠体的制造方法 - Google Patents
层叠体和层叠体的制造方法 Download PDFInfo
- Publication number
- CN116496000A CN116496000A CN202310390146.0A CN202310390146A CN116496000A CN 116496000 A CN116496000 A CN 116496000A CN 202310390146 A CN202310390146 A CN 202310390146A CN 116496000 A CN116496000 A CN 116496000A
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- Prior art keywords
- oxide
- laminate
- coating
- glass plate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000011521 glass Substances 0.000 claims abstract description 54
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 238000012937 correction Methods 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 7
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims abstract description 6
- 229910001634 calcium fluoride Inorganic materials 0.000 claims abstract description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 6
- 229910000484 niobium oxide Inorganic materials 0.000 claims abstract description 6
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- 238000002834 transmittance Methods 0.000 claims description 13
- 239000011247 coating layer Substances 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000006124 Pilkington process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007372 rollout process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/225—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2456—Coating containing TiO2
-
- C—CHEMISTRY; METALLURGY
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
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- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
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- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/212—TiO2
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- C03C2217/00—Coatings on glass
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- C03C2217/00—Coatings on glass
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- C03C2217/28—Other inorganic materials
- C03C2217/281—Nitrides
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- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
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- C03C2218/00—Methods for coating glass
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Abstract
一种层叠体,具有玻璃板和涂层,上述涂层含有选自氮化硅、氧化钛、氧化铝、氧化铌、氧化锆、氧化铟锡、氧化硅、氟化镁和氟化钙中的1种以上的成分,玻璃板的厚度dg与涂层的厚度dc之比(dc/dg)在0.05×10-3~1.2×10-3的范围,上述层叠体的自重挠曲校正条件下的曲率半径r1为10m~150m。
Description
本申请为专利申请201980013998.X(申请日:2019年08月16日,发明创造名称:层叠体和层叠体的制造方法)的分案申请。
技术领域
本发明涉及层叠体和层叠体的制造方法,具体而言,涉及半导体封装的制造工序中用于支承加工基板的支承玻璃基板。
背景技术
晶圆级封装(WLP)中,提出了扇出型(fan-out型)的WLP。扇出型的WLP中,为了抑制加工基板的尺寸变化,已知使用支承加工基板的玻璃基板(专利文献1)。
然而,WLP的制造工序中,如图1所示,存在剥离层层叠工序、树脂模具制作工序等高温条件的工序,有时因热而使基板产生翘曲。
作为翘曲的改善,进行了使用翘曲更小的支承玻璃基板来改善的研究,但出于通过使支承玻璃基板在WLP的制造工序中预先发生的翘曲相反的方向上翘曲而抵消WLP的制造工序中发生的翘曲的目的的研究尚未进行。
另外,已知通过在玻璃基板上涂布薄膜而产生翘曲(专利文献2),但是尚未研究使玻璃板以更薄的薄膜高效地产生翘曲的技术。
现有技术文献
专利文献
专利文献1:日本特开2017―30997号公报
专利文献2:国际公开第2017/204167号
发明内容
虽然通过增厚涂层而容易增大层叠体的翘曲,但扇出型的WLP的制造工序中通过对剥离层进行可见光波长的激光照射而能够使加工基板与支承基板分离,因此因涂层的材质、涂层的厚度阻碍了激光的透射而成为问题。
这样的状况下,需要在维持可见光透过性的同时具有较大的翘曲的支承玻璃基板材料。
本发明人发现通过具有特定的翘曲和构成的层叠体以及特定条件下的层叠体的制造方法解决了上述课题。
即,本发明提供一种层叠体,其具有玻璃板和涂层,上述涂层含有选自氮化硅、氧化钛、氧化铝、氧化铌、氧化锆、氧化铟锡、氧化硅、氟化镁和氟化钙中的1种以上的成分,玻璃板的厚度dg和涂层的厚度dc之比在dc/dg=0.05×10-3~1.2×10-3的范围,上述层叠体的自重挠曲校正条件下的曲率半径r1为10m~150m。
根据本发明能够提供在维持可见光透过性的同时具有较大翘曲的层叠体。并且,使用该层叠体作为支承玻璃基板能够制造尺寸精度高的WLP。
附图说明
图1是以往的WLP制造工序(到支承基板剥离为止)的1例。
图2是使用本发明的层叠体作为支承玻璃基板的WLP制造工序(到支承基板剥离为止)的1例。
符号说明
10层叠体
11玻璃板
12薄膜(涂层)
具体实施方式
对本发明的层叠体和层叠体的制造方法进行说明。应予说明,本说明书中表示数值范围的波浪线“~”只要没有特别说明,就表示包含在其前后记载的数值作为下限值和上限值。
[玻璃组成]
本发明的层叠体中使用的玻璃板的组成只要没有特别限定,就可以使用可见光透过率高的公知的组成。具体而言,可以使用波长400nm~1000nm的透过率的最低值(T%)为60%以上的组成。
作为优选的组成,可以举出以下的组成,即,以氧化物基准的质量%表示,在SiO2:40%~70%、B2O3:0%~15%、MgO:0%~10%、CaO:0%~10%、SrO:0%~13%、BaO:0%~40%、Na2O:0%~30%、K2O:0%~13%、Al2O3:0.5%~15%的范围。
作为特别优选的组成,可举出如下组成,即,以氧化物基准的质量%表示,在SiO2:49%~70%、B2O3:4%~13%、MgO:0%~0.5%、CaO:0%~8%、SrO:0%~8%、BaO:0%~13%、Na2O:4%~15%、K2O:0.1%~13%、Al2O3:4%~13%的范围。
如果组成在该范围,则可见光透过率优异。另外,高热膨胀系数的玻璃组成中,因为热处理所致的翘曲的影响变大,所以本发明的效果特别大。
[玻璃板]
玻璃板在本发明的层叠体中使用。玻璃板例如将所述玻璃组成成型为规定的形状(例如,四角形或者圆盘形)的板而制造。
玻璃板的成型方法不受限定,例如可以使用浮法、熔融法和轧平(roll-out)法等公知的方法。另外,本发明中,为了使层叠体较大地翘曲,优选涂布前的玻璃板具有一定的翘曲。
理想的涂布前的玻璃板的翘曲是玻璃板的自重挠曲校正条件(是校正成玻璃晶圆本来具有的翘曲量的值。虽然重力下产生由自重所致的“挠曲”,但是是将其排除而得的值)下的曲率半径r0优选为200m~500m,更优选为300m~400m。通过使涂布前的玻璃板的翘曲在该范围,后述的涂布导致层叠体的翘曲增大。
符合这样的条件的玻璃板通过例如由浮法制造的原料板切出具有该范围的翘曲的部分而容易地得到。
玻璃板的板厚(dg)优选0.3mm~3.0mm。更优选0.5mm~2.0mm,特别优选0.7mm~1.2~mm。通过在该范围,作为层叠体的强度优异,重量也为允许范围。另外,玻璃板可以使用经化学强化的玻璃板。
[涂层]
本发明中,通过在上述玻璃板涂布薄膜而形成涂层。涂层含有选自氮化硅、氧化钛、氧化铝、氧化铌、氧化锆、氧化铟锡、氧化硅、氟化镁和氟化钙中的1种以上的成分。氮化硅和氧化钛的可见光透过性和使层叠体翘曲的效果优异,因而优选。
作为涂布方法,可以使用溅射法、离子辅助沉积法和气溶胶沉积法等公知的方法。其中,溅射法的使层叠体翘曲的效果优异,因而优选。而且,涂布对上述具有翘曲的玻璃板的凸面侧进行,从而增大玻璃板的翘曲。
涂层(dc)的厚度优选0.05μm~1.2μm。更优选0.1μm~1.0μm,特别优选0.4μm~0.6μm。通过在该范围,能够兼得层叠体的大的翘曲和高的可见光透过性。
[层叠体]
本发明的层叠体具有上述玻璃板和上述涂层。另外,自重挠曲校正条件下的曲率半径r1为10m~150m,优选30m~100m的范围。通过在该范围,能够制造尺寸精度高的WLP。
另外,玻璃板的厚度dg与涂层的厚度dc之比为dc/dg=0.05×10-3~1.2×10-3,优选在0.4×10-3~0.5×10-3的范围。通过在该范围,能够兼得层叠体的大的翘曲和高的可见光透过性。
层叠体的厚度优选0.3mm~3.5mm。更优选0.5mm~2.5mm,特别优选0.7mm~1.3mm。通过在该范围,能够兼得层叠体的强度和高的可见光透过性。
另外,层叠体的形状优选四角形或者圆盘形。
该层叠体适合用作支承玻璃基板。
[层叠体的制造方法]
本发明的层叠体通过在上述玻璃板进行上述涂布来制造。作为优选的制造方法的具体例,如图2所示,是具有如下工序的条件,在具有自重挠曲校正条件下的曲率半径为200m~500m的翘曲的玻璃板11的凸侧涂布含有选自氮化硅、氧化钛、氧化铝、氧化铌、氧化锆、氧化铟锡、氧化硅、氟化镁和氟化钙中的1种以上的成分的薄膜(涂层)12的工序。通过按该条件制造,能够适当地得到层叠体10的自重挠曲校正条件下的曲率半径r1为10m~150m以下的层叠体10。
实施例
以下,根据实施例和比较例对本发明进行具体说明,但只要起到本发明的效果,就可以适当地变更实施方式。
<评价用样品形状>
使用对直径150mm(6英寸)、板厚1.0mm的圆盘形的玻璃板按表1中记载的条件进行涂布而得的样品。
<测定条件·评价条件>
[玻璃板的厚度(dg)和涂层的厚度(dc)的测定]
在室温条件下使用激光位移仪(神津精机株式会社制Dyvoce),测定涂布前的玻璃板和涂布后的层叠体的厚度,求出dg和dc。
[玻璃板和层叠体的曲率半径(r0、r1)]
对样品使用激光位移仪(神津精机株式会社制的Dyvoce),基于双面差分模式下的由自重挠曲校正求出的样品本来所具有的翘曲量,通过形状模拟而算出。而且,由通过模拟得到的形状求出曲率半径。
将涂布前的玻璃板的自重挠曲校正条件下的曲率半径设为r0,将涂布后的层叠体的玻璃板的自重挠曲校正条件下的曲率半径设为r1。
[翘曲的评价]
由涂布所致的翘曲通常随着涂层变厚而增大。因此,翘曲的评价按下述式所示的R进行。评价A~D中A、B和C为合格。
式:R=r1(m)×dc(μm)
评价:
A:R≤30,
B:30<R≤50,
C:50<R<70,
D:70≤R
[可见光透过性]
在室温条件下使用光谱透射率测定机(日本分光株式会社制V-700)测定样品的波长400-1000nm的透过率的最低值(T%)。评价A~C中A或者B为合格。
评价:
A:80%≤T,
B:60%≤T<80%,
C:T<60%
[实施例1]
利用浮法得到组成1(以质量%计SiO2:56.9%、Al2O3:8.1%、CaO:2.3%、SrO:12.3%、BaO:20.4%)的玻璃的原料板(纵横1000mm、厚度1.4mm)。从上述原料板的中心部切出半径75mm(直径:150mm)的圆型制成圆盘形玻璃板。进行倒角加工后,用双面研磨机(滨井制作所株式会社制16B-N/F)进行研磨,将板厚(dg)调整为1.0mm。该玻璃板的曲率半径r0(基于浮法)在自重挠曲校正条件下为370m。
其后,用溅射装置(ULVAC公司制SIV-345XYSSS)使用硅靶通过反应性溅射在玻璃板的翘曲的凸面侧以膜的压缩应力为1GPa的方式形成氮化硅膜。涂层的厚度(dc)为0.5μm。将评价结果示于表1。
[实施例2~实施例7和比较例1~4]
变更为表1中记载的条件,除此以外,与实施例1同样地进行操作。
将评价结果示于表1。
(质量%)
·组成1:SiO2:56.9%、Al2O3:8.1%、CaO:2.3%、SrO:12.3%、BaO:20.4%
·组成2:SiO2:68.9%、Al2O3:5.9%、MgO:4.1%、CaO:7.3%、Na2O:14.6%、K2O:0.2%
本申请基于2018年12月21日在日本专利局申请的特愿2018-240262号主张优先权,将特愿2018-240262号的全部内容援引于本申请中。
Claims (7)
1.一种层叠体,具有玻璃板和涂层,
所述涂层的厚度dc与所述玻璃板的厚度dg之比即dc/dg在0.4×10-3~1.2×10-3的范围,
所述层叠体的自重挠曲校正条件下的曲率半径r1为10m~150m,
波长400nm~1000nm的透过率的最低值为60%以上。
2.根据权利要求1所述的层叠体,其中,所述玻璃板中使用的玻璃的组成以质量%计,在SiO2:40%~70%、B2O3:0%~15%、MgO:0%~10%、CaO:0%~10%、SrO:0%~13%、BaO:0%~40%、Na2O:0%~30%、K2O:0%~13%、Al2O3:0.5%~15%的范围。
3.根据权利要求1或2所述的层叠体,其中,所述涂层含有选自氮化硅、氧化钛、氧化铝、氧化铌、氧化锆、氧化铟锡、氧化硅、氟化镁和氟化钙中的1种以上的成分。
4.根据权利要求1~3中任一项所述的层叠体,其中,所述层叠体的形状为四角形或者圆盘形。
5.根据权利要求1~4中任一项所述的层叠体,其中,所述层叠体用于支承玻璃基板。
6.一种权利要求1~5中任一项所述的层叠体的制造方法,具有如下工序:在具有自重挠曲校正条件下的曲率半径r0为200m~500m的翘曲的玻璃板的凸侧涂布含有选自氮化硅、氧化钛、氧化铝、氧化铌、氧化锆、氧化铟锡、氧化硅、氟化镁和氟化钙中的1种以上的成分的薄膜。
7.根据权利要求6所述的层叠体的制造方法,其中,所述涂布的方法为溅射法。
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Also Published As
Publication number | Publication date |
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WO2020129297A1 (ja) | 2020-06-25 |
JPWO2020129297A1 (ja) | 2021-02-15 |
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TWI781519B (zh) | 2022-10-21 |
JP7131654B2 (ja) | 2022-09-06 |
US11817328B2 (en) | 2023-11-14 |
JP6885476B2 (ja) | 2021-06-16 |
US11594426B2 (en) | 2023-02-28 |
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US20200279756A1 (en) | 2020-09-03 |
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