CN115763293A - Method for monitoring metal of semiconductor process body - Google Patents
Method for monitoring metal of semiconductor process body Download PDFInfo
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- CN115763293A CN115763293A CN202211525723.4A CN202211525723A CN115763293A CN 115763293 A CN115763293 A CN 115763293A CN 202211525723 A CN202211525723 A CN 202211525723A CN 115763293 A CN115763293 A CN 115763293A
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- silicon wafer
- metal
- bulk metal
- manufacturing process
- thickness
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 87
- 239000002184 metal Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000012544 monitoring process Methods 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 75
- 239000010703 silicon Substances 0.000 claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 claims abstract description 48
- 230000007547 defect Effects 0.000 claims abstract description 26
- 238000012360 testing method Methods 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 16
- 230000035945 sensitivity Effects 0.000 claims abstract description 15
- 238000005070 sampling Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 10
- 238000001556 precipitation Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 238000011156 evaluation Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 63
- 238000011109 contamination Methods 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 9
- 239000000047 product Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005247 gettering Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000013522 software testing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present disclosure relates to a method for monitoring a semiconductor process bulk metal, comprising the steps of: the first step is as follows: obtaining a silicon wafer comprising a defect region with high sensitivity to metal by controlling drawing process parameters; the second step is that: sampling a silicon wafer through a sampling flow associated with a semiconductor manufacturing process; and a third step: and carrying out bulk metal test on the silicon wafer after sample preparation to obtain the bulk metal condition of the semiconductor manufacturing process. By the method, the degree of the metal pollution of the process body can be more accurately evaluated, and the risk of increasing the production cost caused by the condition of mistakenly evaluating the silicon wafer pollution of the product due to inaccurate evaluation of the degree of the metal pollution of the process body is reduced or even avoided.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to a method for monitoring a semiconductor process bulk metal.
Background
Silicon wafer Bulk metals (Bulk metals), such as iron or copper, cause problems of increased leakage current, reduced minority carrier lifetime, reduced gate oxide quality, etc. in integrated circuit fabrication processes, as line widths of integrated circuit devices become smaller, requirements for the level of silicon wafer Bulk Metal content become more stringent, and thus, monitoring and controlling the Bulk Metal of semiconductor fabrication processes becomes more important.
For silicon wafer manufacturing, the conventional method for monitoring the metal of a manufactured body is to extract two silicon wafers at fixed positions at the tail of a crystal bar, process the silicon wafers by using a mass production process flow as a sample preparation process flow to obtain sample wafers, and finally perform a body metal test on the sample wafers to realize daily monitoring of the metal of the manufactured body.
However, since the quality of silicon wafers is affected by lattice defects such as Crystal Originated Particle (COP), the silicon wafer products produced in daily life mainly include products without COP-free, and the sensitivity of the COP-free products to metals is poor, so that even if metal contamination exists in processing equipment in the silicon wafer manufacturing process, the degree of the metal contamination cannot be accurately evaluated, and further the risk of metal contamination of the product silicon wafer cannot be accurately evaluated.
Moreover, factors affecting bulk metals generally relate to: polycrystalline silicon raw material and crystal growth process; a silicon wafer processing process; and the heat treatment environment and temperature, especially for the latter two factors, the monitoring uncertainty is high, the monitoring is complex, and effective monitoring is difficult to realize by using COP-free products with poor sensitivity to metals.
In addition, this system appearance flow is the volume production manufacturing process, and the silicon chip just carries out the body metal test after volume production manufacturing process sample preparation such as grinding, polishing, washing, thermal treatment, and the processing website of process is many, leads to whole process consuming time longer, is unfavorable for in time assessing the risk of metal pollution so that in time carry out equipment adjustment to probably lead to manufacturing cost's increase from this.
Disclosure of Invention
This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.
An object of the present disclosure is to provide a method for monitoring a metal of a semiconductor process body, which can accurately evaluate the metal contamination level of the semiconductor process body.
Another object of the present disclosure is to provide a method for monitoring a bulk metal of a semiconductor manufacturing process, which can shorten a sample preparation process.
To achieve one or more of the above objects, there is provided a method for monitoring a semiconductor process bulk metal, comprising the steps of:
the first step is as follows: obtaining a silicon wafer comprising a defect region with high sensitivity to metal by controlling drawing process parameters;
the second step is that: sampling the silicon wafer through a sampling process associated with a semiconductor manufacturing process; and
the third step: and carrying out bulk metal test on the silicon wafer after sample preparation to obtain the bulk metal condition of the semiconductor manufacturing process.
In the method for monitoring bulk metal in a semiconductor manufacturing process, the defect region may be an oxidation induced stacking fault region.
In the above method for monitoring a bulk metal in a semiconductor manufacturing process, the defect region may be an oxygen precipitation promoting region or a vacancy/interstitial band region having a high oxygen precipitation capability.
In the above method for monitoring a bulk metal of a semiconductor manufacturing process, the drawing process parameters may include a drawing speed and an oxygen concentration.
In the method for monitoring the bulk metal of the semiconductor manufacturing process, the semiconductor manufacturing process may be a silicon wafer manufacturing process.
In the method for monitoring the bulk metal of the semiconductor manufacturing process, the sample preparation process may include:
carrying out thickness grinding on the silicon wafer obtained in the first step;
carrying out re-etching on the silicon wafer subjected to thickness grinding; and
and carrying out light etching on the silicon wafer subjected to the heavy etching.
In the above method for monitoring a semiconductor process bulk metal, the thickness polishing may be set such that the thickness of the silicon wafer is controlled to 875 μm to 925 μm.
In the above method for monitoring bulk metal in a semiconductor manufacturing process, the re-etching may be set such that the thickness of the silicon wafer is controlled to 775 μm to 825 μm.
In the above method for monitoring a bulk metal in a semiconductor manufacturing process, the light etching may be performed using hydrofluoric acid having a concentration of 10% to 20%.
In the method for monitoring bulk metal in a semiconductor manufacturing process, the bulk metal test may include measuring minority carrier lifetime or minority carrier diffusion length of the silicon wafer after sample preparation.
According to the method, the silicon wafer comprising the defect area with high sensitivity to metal is obtained by controlling the drawing process parameters, and the bulk metal condition of the semiconductor manufacturing process is obtained by performing the wafer bulk metal test based on the defect area, so that the degree of bulk metal pollution of the manufacturing process can be more accurately evaluated, and the risk of mistakenly evaluating the pollution condition of the product silicon wafer and further increasing the production cost due to inaccurate evaluation of the degree of bulk metal pollution of the manufacturing process is reduced and even avoided. In addition, through setting up new system appearance flow, some equipment processing that do not have the influence to the metal test result has been skipped, and it is consuming time to have reduced system appearance by a wide margin for the time of obtaining the test result greatly shortens, has promoted efficiency of software testing, thereby can in time assess the risk of metal pollution so that in time carry out equipment adjustment.
The above features and advantages and other features and advantages of the present disclosure will become more apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
FIG. 1 is a schematic flow chart diagram of a method for monitoring semiconductor process bulk metal according to an embodiment of the present disclosure;
FIG. 2 schematically illustrates a process for obtaining a silicon wafer comprising defect regions having a high sensitivity to metals in a special pattern; and
fig. 3 schematically illustrates a sample preparation flow according to an embodiment of the present disclosure.
Detailed Description
The disclosure is described in detail below with the aid of exemplary embodiments with reference to the accompanying drawings. It is to be noted that the following detailed description of the present disclosure is intended for purposes of illustration only and is not intended to limit the present disclosure in any way.
As described above, the conventional method for monitoring the process bulk metal is to extract silicon wafers at a fixed position at the tail of the ingot and perform a bulk metal test after the sample is produced, and the silicon wafers produced in daily life are mainly COP-free products, which have poor sensitivity to metal and cannot be used for accurately evaluating the metal contamination degree occurring in the processing equipment of the semiconductor process.
To this end, referring to fig. 1 and 2, embodiments of the present disclosure provide a method for monitoring a semiconductor process bulk metal, comprising the steps of:
the first step is as follows: obtaining a silicon wafer 100 including a defect region 1 having high sensitivity to a metal by controlling a drawing process parameter;
the second step is that: sampling the silicon wafer 100 through a sampling process associated with a semiconductor manufacturing process; and
the third step: the bulk metal test is performed on the sampled silicon wafer 100 to obtain the bulk metal status of the semiconductor process.
The defect region 1 (see fig. 2) having high sensitivity to metal is a region on the silicon wafer which is sensitive to metal, has a strong absorption capacity, and has a specific high density defect distribution, which has a gettering effect on impurities on the surface and in the bulk of the silicon wafer, and particularly in the processing of the silicon wafer which inevitably generates heat, the high density oxygen precipitates carry out internal gettering of the surrounding metals and impurities.
Based on this, the silicon wafer is not extracted from the crystal bar produced in daily life, but the specific crystal bar 200 including the defect region 1 with high sensitivity to metal is drawn by controlling the drawing process parameters, and the silicon wafer 100 having the corresponding defect region 1 is extracted therefrom. Since the quality of the silicon wafer is originally avoided as much as possible during the ordinary drawing or daily production due to the influence of the defect area, the present application reversely proposes to specially obtain the silicon wafer with the defect area, so that the bulk metal condition or the contamination degree of the semiconductor manufacturing process can be more accurately reflected by testing the bulk metal of the silicon wafer with the defect area in the present application compared with the silicon wafer without crystal originated particle defects (i.e. COP-free silicon wafer) with poorer metal sensitivity in daily production. In this way, the risk of misestimating the contamination condition of the product silicon wafer and further increasing the production cost due to inaccurate estimation of the contamination degree of the bulk metal of the manufacturing process is reduced or even avoided.
Taking Bulk copper (Bulk Cu) as an example, the level of Bulk copper of a silicon wafer produced in daily life is tested to be, for example, 1E + 9-1E + 10atm/cm 3 (atomic number/cubic centimeter), and the level of bulk copper tested using the silicon wafer of the present application having the above-described defect region is 1E + 1atom/cm 3 It can be seen that the second value more accurately and truly reflects the bulk metal contamination level of the process.
It is understood that high sensitivity has the meaning known and clearly understood by a person skilled in the art, which at least means a higher sensitivity to metals compared to the low sensitivity of COP-free silicon wafers.
It is noted that the semiconductor process may be a silicon wafer process, i.e., a manufacturing process of a silicon wafer, and it is also understood that the semiconductor process may be other semiconductor processes involving metal contamination.
In an embodiment of the present disclosure, the defect region may be an Oxidation Induced Stacking Faults (OISF) region.
The OISF region is a ring shape, which is a defect caused by a high oxide accumulation, and generally occurs at the boundary between Vacancy type defect (Vacancy) and insertion type defect (Interstitial), i.e., the grain boundary between Vacancy rich (V-rich) region 2 and Interstitial rich (I-rich) region 3 in FIG. 2. The OISF ring has the characteristics of high density, large size and the like, and has a strong adsorption effect on surface metal and bulk metal, so that the OISF ring can be used for realizing accurate monitoring of the bulk metal in the manufacturing process.
It is conceivable that the defect region may be an oxygen precipitation promoting region (simply referred to as "Pv region") or a vacancy/interstitial Band region (simply referred to as "P-Band" region) having a high oxygen precipitation capability. It is understood that the high density of oxide precipitates themselves have gettering effects on the bulk and bulk metals, allowing for internal gettering of the bulk metal and hence monitoring of the bulk metal.
In embodiments of the present disclosure, the draw process parameters may include a draw speed V and an oxygen concentration.
For example, in the ingot pulling process for obtaining an OISF ring, the pulling rate may be further increased from the predetermined pulling rate in the Pv region by 0.1 to 0.5mm/min, and the average oxygen concentration may be set to 11.5ppma or more.
The sampling process is a process associated with a semiconductor manufacturing process, and is typically a mass production process of semiconductors, so as to reflect the bulk metal contamination level of the semiconductor manufacturing process. However, especially for the silicon wafer manufacturing process, the mass production process flow includes grinding, polishing, cleaning, heat treatment, etc., the number of stations is large, the time consumption is long, and it is not favorable for evaluating the risk of metal contamination in time so as to adjust the equipment in time.
According to an embodiment of the present disclosure, instead of a mass production process flow for a silicon wafer process, a sample preparation flow associated with a semiconductor process, more specifically, a silicon wafer process is newly provided, as shown in fig. 3, which includes:
carrying out thickness grinding on the silicon wafer obtained in the first step;
carrying out re-etching on the silicon wafer subjected to thickness grinding; and
and carrying out light etching on the silicon wafer subjected to the heavy etching.
After the treatment, the silicon wafer is cleaned, and then the metal of the silicon wafer body can be tested.
The sample preparation flow is a simplified scheme obtained on the basis of the conventional sample preparation flow, and equipment processing without influence on a metal test result is skipped, so that the sample preparation time is greatly reduced by at least 50%, the time for obtaining the test result is greatly shortened, the test efficiency is improved, and the risk of metal pollution can be timely evaluated so as to timely adjust the equipment.
In an embodiment of the present disclosure, the thickness grinding may be set such that the thickness of the silicon wafer is controlled to, for example, 875 μm to 925 μm. That is, the thickness of the silicon wafer can be controlled from about 1mm to 875 μm to 925 μm by this thickness grinding, for example, grinding with a grinder.
In addition, in the embodiment of the present disclosure, the re-etching may be performed using a potassium hydroxide solution having a concentration of 30% to 50%, so that the thickness of the silicon wafer is further controlled to 775 μm to 825 μm.
The re-etching may be performed using ammonia or hydrofluoric acid.
The potassium hydroxide solution with the concentration of 30-50% can not only realize effective silicon wafer thickness removal amount, but also can ensure that no spots are left on the surface of the silicon wafer due to higher viscosity.
In addition, the light etching can be carried out by using hydrofluoric acid with the concentration of 10-20%, and the natural oxide on the surface of the silicon wafer can be removed by the hydrofluoric acid with the concentration. The thickness of the silicon wafer after the light etching can be controlled in the range of 775 mu m to 825 mu m.
In the embodiments of the present disclosure, the bulk metal may be tested by measuring the Minority Carrier Lifetime (MCLT) and the Minority Carrier Diffusion Length (MCDL) of the silicon wafer after sample preparation.
It is contemplated that the above-described bulk metal testing may be accomplished using, for example, surface Photovolatage (SPV).
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A method for monitoring a bulk metal of a semiconductor manufacturing process, comprising the steps of:
the first step is as follows: obtaining a silicon wafer comprising a defect region with high sensitivity to metal by controlling drawing process parameters;
the second step is that: sampling the silicon wafer through a sampling flow associated with the semiconductor manufacturing process; and
the third step: and carrying out bulk metal test on the silicon wafer after sample preparation to obtain the bulk metal condition of the semiconductor manufacturing process.
2. The method of claim 1, wherein the defect region is an oxidation induced stacking fault region.
3. The method of claim 1, wherein said defect region is an oxygen precipitation promoting region or a vacancy/interstitial band region having a high oxygen precipitation capacity.
4. The method of claim 1, wherein the draw process parameters comprise draw rate and oxygen concentration.
5. The method of any one of claims 1 to 4, wherein the semiconductor process is a silicon wafer process.
6. The method of claim 5, wherein the sample preparation process comprises:
performing thickness grinding on the silicon wafer obtained in the first step;
carrying out re-etching on the silicon wafer ground by the thickness; and
and carrying out light etching on the silicon wafer subjected to the heavy etching.
7. The method of claim 6, wherein said thickness polishing is set such that the thickness of said silicon wafer is controlled to 875 μm to 925 μm.
8. The method of claim 6 or 7, wherein the re-etching is set such that the thickness of the silicon wafer is controlled to 775 μm to 825 μm.
9. The method of claim 6 or 7, wherein the light etching is performed using hydrofluoric acid at a concentration of 10% to 20%.
10. The method of claim 1 or 2, wherein the bulk metal test comprises measuring minority carrier lifetime or minority carrier diffusion length of the silicon wafer after sample preparation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211525723.4A CN115763293A (en) | 2022-11-30 | 2022-11-30 | Method for monitoring metal of semiconductor process body |
| TW112101930A TWI844233B (en) | 2022-11-30 | 2023-01-17 | Method for monitoring bulk metal in semiconductor process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211525723.4A CN115763293A (en) | 2022-11-30 | 2022-11-30 | Method for monitoring metal of semiconductor process body |
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| CN115763293A true CN115763293A (en) | 2023-03-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211525723.4A Pending CN115763293A (en) | 2022-11-30 | 2022-11-30 | Method for monitoring metal of semiconductor process body |
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| TW (1) | TWI844233B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003301326A1 (en) * | 2002-10-18 | 2004-05-04 | Sumitomo Mitsubishi Silicon Corporation | Method of measuring point defect distribution of silicon single crystal ingot |
| US7901132B2 (en) * | 2006-09-25 | 2011-03-08 | Siltron Inc. | Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatment |
| TW201529473A (en) * | 2013-06-24 | 2015-08-01 | Dow Corning | Methods of removing silicides from silicon compositions, and products made by such methods |
| CN114792622A (en) * | 2022-06-27 | 2022-07-26 | 西安奕斯伟材料科技有限公司 | Silicon wafer processing method and silicon wafer |
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- 2022-11-30 CN CN202211525723.4A patent/CN115763293A/en active Pending
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| TWI844233B (en) | 2024-06-01 |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |