CN115172500A - Laser battery pack - Google Patents

Abstract

The invention discloses a laser battery assembly, belonging to the technical field of photovoltaic cells, comprising: an insulating substrate, M laser battery units, an isolation groove, an insulating layer and a bridge electrode. The laser battery unit includes a lower electrode, an epitaxial active layer of the battery, an upper electrode, and an anti-reflection structure. The isolation groove separates the laser battery cells, the insulating layer insulates and passivates the side walls of the laser battery cells, and the bridge electrodes connect the upper and lower electrodes of the adjacent laser battery cells to realize the electrical connection of the adjacent laser battery cells, and connect the M laser battery cells in series in sequence. . The laser battery assembly of this structure can take into account both battery efficiency and applicability in the application of long-distance high-power laser wireless energy transmission.

Description

A laser battery assembly

technical field

The invention belongs to the technical field of photovoltaic cells, and in particular relates to a laser cell assembly.

Background technique

Laser wireless energy transfer has the advantages of high transmission energy density, high transmission and conversion efficiency, high comprehensive energy utilization rate, small system size, and limited energy supply scenarios. It is very suitable for space environment applications. The solar cell array of the high-orbit space vehicle realizes the conversion of solar energy into electrical energy, and the electrical energy is converted into laser light, and the laser power is used to supply energy to other space vehicles or near-space UAVs. The laser battery is the most important part of the laser receiving end of the wireless energy transmission system. The photoelectric conversion efficiency of the laser battery module directly determines the overall transmission efficiency of the wireless energy transfer system.

Long-distance high-power laser wireless energy transmission, in order to ensure high photoelectric conversion efficiency of laser battery components in practical applications, puts forward more stringent requirements for laser battery components, including: large size, high voltage, and the difference between laser light intensity and laser light intensity. Strong adaptability to incident angle changes. For single-junction III-V semiconductor laser cells, under high-power laser irradiation, a large operating current will be generated. Excessive current will cause higher energy loss in the circuit, thereby reducing the photoelectric conversion of laser cell components. efficiency. Generally, the method of series sub-battery is adopted to increase the battery voltage, thereby reducing the battery output current.

There are two types of tandem structures of conventional laser battery sub-cells, horizontal and vertical. However, there are divided regions between the sub-cells in the horizontal series structure, which reduces the effective power generation area of the cells. The vertical tandem structure can only optimize the absorption thickness of each junction cell for a single laser intensity. Changes in light intensity and angle of incidence affect its efficiency, and the greater the number of vertical junctions, the greater the effect. Therefore, the traditional structure of the laser battery cannot meet the requirements of long-distance high-power laser wireless energy transmission.

SUMMARY OF THE INVENTION

In order to solve the technical problems existing in the known technology, the present invention provides a laser battery assembly, which can simultaneously satisfy the requirements of large size and high voltage of the laser battery assembly in the long-distance high-power laser wireless energy transmission, as well as to the laser light intensity and incidence. The three requirements of strong adaptability to angular changes are that the effective light-receiving area of the battery is larger, the series resistance of the battery is smaller, and the photoelectric conversion efficiency is higher.

The purpose of the present invention is to provide a laser battery assembly, comprising: an insulating substrate, M laser battery cells, an isolation groove, an insulating layer, and a bridge electrode, wherein: M is a natural number greater than 0.

The laser battery unit includes a lower electrode, a battery epitaxial active layer, an upper electrode, and an anti-reflection structure.

The isolation groove separates the adjacent laser battery cells, the insulating layer insulates and passivates the side walls of the laser battery cells, and the bridge electrodes connect the upper and lower electrodes of the adjacent laser battery cells to realize adjacent laser cells. The units are electrically connected, and the M laser battery units are connected in series in sequence.

Preferably, the material of the insulating substrate is one of silicon oxide, polyimide, and quartz.

Preferably, the areas of the M laser battery cells are the same.

As an optional structure, the cell epitaxial active layer is a GaAs-based cell active layer, which includes from bottom to top: a p-type electrode contact layer, a first junction Ga(In)As sub-cell, a tunnel junction, a second Junction Ga(In)As subcell and n-type electrode contact layer.

Preferably, the first junction Ga(In)As sub-cell includes from bottom to top: a GaInP back field, a Ga _x1 In _1-x1 As base region, a Ga _x1 In _1-x1 As emitter region, and a GaInP window layer, wherein 0.8 ≤x1≤1.

Preferably, the second junction Ga(In)As sub-cell includes from bottom to top: a GaInP back field, a Ga _x2 In _1-x2 As base region, a Ga _x2 In _1-x2 As emitter region, and a GaInP window layer, wherein 0.8 ≤x2≤1.

Preferably, the p-type electrode contact layer is a p-type GaAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

Preferably, the GaInP back field is p-type doped, the doping concentration is 1×10 ¹⁷ -1×10 ¹⁸ cm ^-3 , and the thickness is 50-400 nm.

Preferably, the GaInP window layer is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ⁻³ and a thickness of 50 to 400 nm.

Preferably, the Ga _x1 In _1-x1 As base region is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ⁻³ and a thickness of 1000 to 5000 nm.

Preferably, the Ga _x1 In _1-x1 As emission region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm.

Preferably, the Ga _x2 In _1-x2 As base region is p-type doped, the doping concentration is 1×10 ¹⁶ -1×10 ¹⁸ cm ^-3 , and the thickness is 1000-5000 nm.

Preferably, the Ga _x2 In _1-x2 As emission region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 500 nm.

Preferably, the tunnel junction includes: an n-type GaAs layer and a p-type GaAs layer, the doping concentration is 1×10 ¹⁹ -1×10 ²¹ cm ^-3 , and the thickness is 10-100 nm.

Preferably, the n-type electrode contact layer is an n-type GaAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

As another optional structure, the cell epitaxial active layer is an InP-based cell active layer, including from bottom to top: p-type electrode contact layer, first junction GaInAsP sub-cell, tunnel junction, second junction GaInAsP sub-cell Cell and n-type electrode contact layer.

Preferably, the first junction GaInAsP sub-cell includes from bottom to top: InP back field, Ga _y1 In _1-y1 As _z1 P _1-z1 base region, Ga _y1 In _1-y1 As _z1 P _1-z1 emission region, InP window layer, where 0≤y1≤0.5, 0≤z1≤1.

Preferably, the second junction GaInAsP sub-cell includes from bottom to top: InP back field, Ga _y2 In _1-y2 As _z2 P _1-z2 base region, Ga _y2 In _1-y2 As _z2 P _1-z2 emission region, InP window layer, where 0≤y2≤0.5, 0≤z2≤1.

Preferably, the p-type electrode contact layer is a p-type GaInAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

Preferably, the InP back field is p-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ⁻³ and a thickness of 50 to 400 nm.

Preferably, the InP window layer is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ⁻³ and a thickness of 50 to 400 nm.

Preferably, the Ga _y1 In _1-y1 As _z1 P _1-z1 base region is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ⁻³ and a thickness of 1000 to 5000 nm.

Preferably, the Ga _y1 In _1-y1 As _z1 P _1-z1 emission region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 500 nm.

Preferably, the Ga _y2 In _1-y2 As _z2 P _1-z2 base region is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ⁻³ and a thickness of 1000 to 5000 nm.

Preferably, the Ga _y2 In _1-y2 As _z2 P _1-z2 emission region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 500 nm.

Preferably, the tunnel junction includes: an n-type InP layer and a p-type InP layer, the doping concentration is 1×10 ¹⁹ -1×10 ²¹ cm ^-3 , and the thickness is 10-100 nm.

Preferably, the n-type electrode contact layer is an n-type GaInAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

Preferably, the material of the upper electrode and the bridge electrode is Au/Ge/Ag, and the thickness is 2-5 μm; the material of the lower electrode is Ti/Pd/Au/Ge/Au, and the thickness is 4-8 μm.

Preferably, the insulating layer is polyimide glue.

Preferably, the anti-reflection structure includes from bottom to top: a titanium oxide/silicon oxide anti-reflection film and a nano-array light trapping structure.

The beneficial effects that the present invention has are:

1. The present invention combines the two technical paths of horizontal series connection and vertical series connection of traditional laser battery sub-cells, and invents a vertical 2-junction cascade structure laser battery assembly. The vertical 2-junction structure has strong adaptability to the changes of laser light intensity and incident angle, and the horizontal inner cascading series structure effectively improves the battery voltage. In long-distance high-power laser wireless energy transfer applications, both battery efficiency and applicability can be considered.

2. The nano-array structure is fabricated on the anti-reflection film, and the light trapping structure can prolong the optical path of photons, enhance the anti-reflection effect in the case of oblique incidence of laser, and enhance the applicability of laser battery components in wireless energy transfer applications.

Description of drawings

FIG. 1 is a schematic cross-sectional structure diagram of a laser cell assembly in a preferred embodiment of the present invention.

FIG. 2 is a schematic top view of the structure of the laser cell assembly in the preferred embodiment of the present invention.

3 is a schematic cross-sectional structural diagram of an epitaxial active layer of a laser cell assembly in a preferred embodiment of the present invention.

In the picture:

100. Insulating substrate;

200, lower electrode;

300. Battery epitaxy active layer;

310. p-type electrode contact layer;

320. The first junction Ga(In)As sub-cell or the first junction GaInAsP sub-cell;

321. GaInP back field or InP back field;

322. Ga _x1 In _1-x1 As base region or Ga _y1 In _1-y1 As _z1 P _1-z1 base region;

323. Ga _x1 In _1-x1 As emission region or Ga _y1 In _1-y1 As _z1 P _1-z1 emission region;

324. GaInP window layer or InP window layer;

330, tunneling junction;

331, n-type GaAs or n-type InP;

332, p-type GaAs or p-type InP;

340. The second junction Ga(In)As sub-cell or the second junction GaInAsP sub-cell;

341. GaInP back field or InP back field;

342. Ga _x2 In _1-x2 As base region or Ga _y2 In _1-y2 As _z2 P _1-z2 base region;

343. Ga _x2 In _1-x2 As emission region or Ga _y2 In _1-y2 As _z2 P _1-z2 emission region;

344. GaInP window layer or InP window layer;

350, n-type electrode contact layer

400, upper electrode

500. Anti-reflection structure

600, insulating layer

700, bridge electrode

Detailed ways

The technical solutions in the embodiments of the present application will be described in detail below with reference to the accompanying drawings in the embodiments of the present application, so as to further understand the inventive content of the present invention.

Obviously, the described embodiments are only some, but not all, embodiments of the present invention. Based on the technical solutions in the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and the use of "first", "second", etc. Words to define parts are only for the convenience of describing the present invention and simplifying the description, and should not be construed as limiting the present invention.

The purpose of the present invention is to provide a laser battery assembly, as shown in FIGS. 1 and 2 , comprising: an insulating substrate 100 , 9 laser battery cells, an isolation groove, an insulating layer 600 , and a bridge electrode 700 .

The laser battery unit includes a lower electrode 200 , a battery epitaxial active layer 300 , an upper electrode 400 , and an anti-reflection structure 500 .

The isolation groove separates the adjacent laser battery cells, the insulating layer 600 insulates and passivates the side walls of the laser battery cells, and the bridge electrode 700 connects the upper and lower electrodes of the adjacent laser battery cells to realize the electrical connection of the adjacent laser battery cells. The battery cells are connected in series in sequence.

The material of the insulating substrate 100 is one of silicon oxide, polyimide, and quartz.

Each laser cell has the same area.

Embodiment 1. The structure of a GaAs-based laser cell assembly for receiving a band of 780-850 nm is as follows:

As shown in FIG. 3 , the cell epitaxial active layer 300 is a GaAs-based cell active layer, including from bottom to top: a p-type electrode contact layer 310 , a first junction Ga(In)As sub-cell 320 , a tunnel junction 330 , a first junction Ga(In)As sub-cell 320 Two-junction Ga(In)As sub-cell 340 and n-type electrode contact layer 350 .

Wherein: the first junction Ga(In)As sub-cell 320 includes from bottom to top: GaInP back field 321, _Gax1 In1 _-x1As base region 322, _{Gax1In1 -x1As} emission region 323, GaInP window layer 324, where 0.8≤x1≤1.

The second junction Ga(In)As sub-cell 340 includes from bottom to top: GaInP back field 341, Ga _x2 In _1-x2 As base region 342, Ga _x2 In _1-x2 As emitter region 343, and GaInP window layer 344, wherein 0.8 ≤x2≤1.

The p-type electrode contact layer 310 is a p-type GaAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

The GaInP back fields 321 and 341 are p-type doping, the doping concentration is 1×10 ¹⁷ -1×10 ¹⁸ cm ^-3 , and the thickness is 50-400 nm.

The GaInP window layers 324 and 344 are n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ⁻³ and a thickness of 50 to 400 nm.

The Ga _x1 In _1-x1 As base region 322 is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ⁻³ and a thickness of 1000 to 5000 nm.

The Ga _x1 In _1-x1 As emission region 323 is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 500 nm.

The Ga _x2 In _1-x2 As base region 342 is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ⁻³ and a thickness of 1000 to 5000 nm.

The Ga _x2 In _1-x2 As emission region 343 is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 500 nm.

The tunnel junction includes: an n-type GaAs layer 334 and a p-type GaAs layer 332 , the doping concentration is 1×10 ¹⁹ -1×10 ²¹ cm ^-3 , and the thickness is 10-100 nm.

The n-type electrode contact layer 350 is an n-type GaAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

The upper electrode 400 and the bridge electrode 700 are made of Au/Ge/Ag with a thickness of 2-5 μm; the lower electrode 200 is made of Ti/Pd/Au/Ge/Au with a thickness of 4-8 μm.

The insulating layer 600 is polyimide glue.

The anti-reflection structure 500 includes from bottom to top: a titanium oxide/silicon oxide anti-reflection film and a nano-array light trapping structure.

Embodiment 2, the structure of an InP-based laser battery assembly for receiving the 950-1600 nm band is as follows:

As shown in FIG. 3 , the cell epitaxial active layer 300 is an InP-based cell active layer, including from bottom to top: a p-type electrode contact layer 310 , a first-junction GaInAsP sub-cell 320 , a tunnel junction 330 , and a second-junction GaInAsP sub-cell Cell 340 , n-type electrode contact layer 350 .

The first junction GaInAsP sub-cell 320 includes from bottom to top: InP back field 321, Ga _y1 In _1-y1 As _z1 P _1-z1 base region base region 322, Ga _y1 In _1-y1 As _z1 P _1-z1 base Region emission region 323, InP window layer 324, wherein 0≤y1≤0.5, 0≤z1≤1.

The second junction GaInAsP sub-cell 340 includes from bottom to top: InP back field 341, Ga _y2 In _1-y2 As _z2 P _1-z2 base region 342, Ga _y2 In _1-y2 As _z2 P _1-z2 emitter region 343, InP Window layer 344, where 0≤y2≤0.5, 0≤z2≤1.

The p-type electrode contact layer 310 is a p-type InP layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

The InP back fields 321 and 341 are p-type doping, the doping concentration is 1×10 ¹⁷ -1×10 ¹⁸ cm ^-3 , and the thickness is 50-400 nm.

The InP window layers 324 and 344 are n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ⁻³ and a thickness of 50 to 400 nm.

Ga _y1 In _1-y1 As _z1 P _1-z1 base region 322 is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ⁻³ and a thickness of 1000 to 5000 nm.

The Ga _y1 In _1-y1 As _z1 P _1-z1 emission region 323 is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 500 nm.

The Ga _y2 In _1-y2 As _z2 P _1-z2 base region 342 is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ⁻³ and a thickness of 1000 to 5000 nm.

The Ga _y2 In _1-y2 As _z2 P _1-z2 emitter region 343 is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 500 nm.

The tunnel junction includes: an n-type InP layer 334 and a p-type InP layer 332 , with a doping concentration of 1×10 ¹⁹ to 1×10 ²¹ cm ⁻³ and a thickness of 10 to 100 nm.

The n-type electrode contact layer 350 is an n-type GaInAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

The upper electrode 400 and the bridge electrode 700 are made of Au/Ge/Ag with a thickness of 2-5 μm; the lower electrode 200 is made of Ti/Pd/Au/Ge/Au with a thickness of 4-8 μm.

The insulating layer 600 is polyimide glue.

The anti-reflection structure 500 includes from bottom to top: a titanium oxide/silicon oxide anti-reflection film and a nano-array light trapping structure.

The above is only the preferred embodiment of the present invention, and does not limit the present invention in any form. Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention belong to the present invention. within the scope of the technical solution of the invention.

Claims (10)

1. A laser battery assembly, characterized in that, comprising: an insulating substrate, M laser battery cells, an isolation groove, an insulating layer, a bridge electrode; wherein: M is a natural number greater than 0; The laser battery unit includes a lower electrode, a battery epitaxial active layer, an upper electrode and an anti-reflection structure; The isolation groove separates the adjacent laser battery cells, the insulating layer insulates and passivates the side walls of the laser battery cells, and the bridge electrodes connect the upper and lower electrodes of the adjacent laser battery cells to realize the electrical connection of the adjacent laser battery cells, Connect M laser battery units in series in sequence. 2 . The laser battery assembly according to claim 1 , wherein the material of the insulating substrate is one of silicon oxide, polyimide, and quartz. 3 . 3 . The laser battery assembly according to claim 1 , wherein the areas of the M laser battery cells are the same. 4 . 4 . The laser cell assembly according to claim 1 , wherein the cell epitaxial active layer is a GaAs-based cell active layer, comprising from bottom to top: a p-type electrode contact layer, a first junction Ga(In) As subcell, tunnel junction, second junction Ga(In)As subcell and n-type electrode contact layer; The first junction Ga(In)As sub-cell includes from bottom to top: a GaInP back field, a Ga _x1 In _1-x1 As base region, a Ga _x1 In _1-x1 As emission region, and a GaInP window layer, where 0.8≤x1≤ 1; The second junction Ga(In)As sub-cell includes from bottom to top: a GaInP back field, a _Gax2 In1 _- x2As base region, a _{Gax2In1 -} x2As emission region, and a GaInP window layer, where 0.8≤x2≤ 1. 5. The laser cell assembly according to claim 4, wherein: The p-type electrode contact layer is a p-type GaAs layer, with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 200 nm; The GaInP back field is p-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ^-3 and a thickness of 50 to 400 nm; The GaInP window layer is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ^-3 and a thickness of 50 to 400 nm; The Ga _x1 In _1-x1 As base region is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ^-3 and a thickness of 1000 to 5000 nm; The Ga _x1 In _1-x1 As emission region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm; The Ga _x2 In _1-x2 As base region is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ^-3 and a thickness of 1000 to 5000 nm; The Ga _x2 In _1-x2 As emission region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm; The tunneling junction includes: n-type GaAs and p-type GaAs layers, with a doping concentration of 1×10 ¹⁹ to 1×10 ²¹ cm ^-3 and a thickness of 10 to 100 nm; The n-type electrode contact layer is an n-type GaAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm. 6 . The laser cell assembly according to claim 1 , wherein the cell epitaxial active layer is an InP-based cell active layer, comprising from bottom to top: a p-type electrode contact layer, a first junction GaInAsP sub-cell, Tunneling junction, second junction GaInAsP subcell and n-type electrode contact layer; The first junction GaInAsP sub-cell includes from bottom to top: InP back field, Ga _y1 In _1-y1 As _z1 P _1-z1 base region, Ga _y1 In _{1- y1} As _z1 P _1-z1 emission region, and InP window layer , where 0≤y1≤0.5, 0≤z1≤1; The second junction GaInAsP sub-cell includes from bottom to top: InP back field, Ga _y2 In _1-y2 As _z2 P _1-z2 base region, Ga _y2 In _{1- y2} As _z2 P _1-z2 emission region, InP window layer , where 0≤y2≤0.5, 0≤z2≤1. 7. The laser battery assembly according to claim 6, wherein: The p-type electrode contact layer is a p-type GaInAs layer, with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 200 nm; The InP back field is p-type doped, the doping concentration is 1×10 ¹⁷ -1×10 ¹⁸ cm ^-3 , and the thickness is 50-400 nm; The InP window layer is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ^-3 and a thickness of 50 to 400 nm; The Ga _y1 In _1-y1 As _z1 P _1-z1 base region is p-type doped, the doping concentration is 1×10 ¹⁶ -1×10 ¹⁸ cm ^-3 , and the thickness is 1000-5000 nm; The Ga _y1 In _1-y1 As _z1 P _1-z1 emission region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm; The Ga _y2 In _1-y2 As _z2 P _1-z2 base region is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ^-3 and a thickness of 1000 to 5000 nm; The Ga _y2 In _1-y2 As _z2 P _1-z2 emission region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm; The tunneling junction includes: n-type InP and p-type InP layers, with a doping concentration of 1×10 ¹⁹ to 1×10 ²¹ cm ^-3 and a thickness of 10 to 100 nm; The n-type electrode contact layer is an n-type GaInAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm. 8 . The laser battery assembly according to claim 1 , wherein: the material of the upper electrode and the bridge electrode is Au/Ge/Ag, and the thickness is 2-5 μm; the material of the lower electrode is Ti/Pd /Au/Ge/Au, with a thickness of 4 to 8 μm. 9 . The laser battery assembly of claim 1 , wherein the insulating layer is polyimide glue. 10 . 10 . The laser battery assembly according to claim 1 , wherein the anti-reflection structure comprises from bottom to top: a titanium oxide/silicon oxide anti-reflection film and a nano-array light trapping structure. 11 .

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