CN115172500B - A laser battery component - Google Patents

Abstract

The invention discloses a laser battery assembly, which belongs to the technical field of photovoltaic cells and comprises: an insulating substrate, M laser battery units, an isolation groove, an insulating layer, and a bridging electrode. The laser battery unit includes a lower electrode, a battery epitaxial active layer, an upper electrode, and an anti-reflection structure. The isolation groove separates the laser battery units, the insulating layer insulates and passivates the side walls of the laser battery units, and the bridging electrodes connect the upper and lower electrodes of adjacent laser battery units to realize the electrical connection of adjacent laser battery units, and connect M laser battery units in series. . In the application of long-distance high-power laser wireless energy transmission, the structural laser battery assembly can take into account battery efficiency and applicability.

Description

A laser battery component

technical field

The invention belongs to the technical field of photovoltaic cells, and in particular relates to a laser cell assembly.

Background technique

Laser wireless energy transmission has the advantages of high transmission energy density, high transmission and conversion efficiency, high energy comprehensive utilization rate, small system size, and limited energy supply scenarios. It is very suitable for space environment applications. The solar cell array of the high-orbit spacecraft realizes the conversion of solar energy into electrical energy, and then converts the electrical energy into laser. With the help of laser batteries, the laser can supply energy to other spacecraft or near-space drones. The laser battery is the most important part of the laser receiving end of the wireless energy transmission system. The photoelectric conversion efficiency of the laser battery module directly determines the overall transmission efficiency of the wireless energy transfer system.

Long-distance and high-power laser wireless energy transmission, in order to ensure the high photoelectric conversion efficiency of laser battery components in practical applications, puts forward more stringent requirements for laser battery components, including: large size, high voltage and the relationship between laser light intensity and Strong adaptability to incident angle changes. For a single-junction III-V semiconductor laser cell, it will generate a large operating current under high-power laser irradiation. Excessive current will cause higher energy loss in the circuit, thereby reducing the photoelectric conversion of the laser cell component. efficiency. Generally, the method of connecting sub-batteries in series is adopted to increase the battery voltage, thereby reducing the battery output current.

There are two types of series structures of traditional laser battery sub-cells: horizontal and vertical. However, there is a partition area between the sub-cells in the horizontal series structure, which reduces the effective power generation area of the battery. However, the longitudinal series structure can only optimize the absorption thickness of each sub-cell for a single laser intensity. Variations in light intensity and incident angle will affect its efficiency, and the greater the number of longitudinal knots, the greater the impact. Therefore, laser batteries with traditional structures cannot meet the needs of long-distance and high-power laser wireless energy transmission.

Contents of the invention

In order to solve the technical problems in the known technology, the present invention provides a laser battery assembly, which can simultaneously meet the needs of large size, high voltage and laser light intensity and incident laser energy transmission in long-distance high-power laser wireless energy transmission. The three requirements of strong adaptability to angle changes, the effective light-receiving area of the battery is larger, the series resistance of the battery is smaller, and the photoelectric conversion efficiency is higher.

The object of the present invention is to provide a laser battery assembly, including: an insulating substrate, M laser battery units, an isolation groove, an insulating layer, and a bridging electrode, wherein: M is a natural number greater than 0.

The laser battery unit includes a lower electrode, a battery epitaxial active layer, an upper electrode, and an anti-reflection structure.

The isolation groove separates the adjacent laser battery units, the insulating layer insulates and passivates the side walls of the laser battery units, and the bridging electrodes connect the upper and lower electrodes of the adjacent laser battery units to realize the The units are electrically connected, and the M laser battery units are sequentially connected in series.

Preferably, the material of the insulating substrate is one of silicon oxide, polyimide, and quartz.

Preferably, the areas of the M laser battery units are the same.

As an optional structure, the battery epitaxial active layer is a GaAs-based battery active layer, which includes from bottom to top: a p-type electrode contact layer, a first junction Ga(In)As subcell, a tunnel junction, a second Junction Ga(In)As subcell and n-type electrode contact layer.

Preferably, the first junction Ga(In)As subcell includes from bottom to top: a GaInP back field, a Ga _x1 In _1-x1 As base region, a Ga _x1 In _1-x1 As emitter region, and a GaInP window layer, wherein 0.8 ≤x1≤1.

Preferably, the second junction Ga(In)As subcell includes from bottom to top: a GaInP back field, a _Gax2 In _1-x2 As base region, a _Gax2 In _1-x2 As emitter region, and a GaInP window layer, wherein 0.8 ≤x2≤1.

Preferably, the p-type electrode contact layer is a p-type GaAs layer with a doping concentration of 1×10 ¹⁸ -1×10 ¹⁹ cm ^-3 and a thickness of 100-200 nm.

Preferably, the GaInP back field is p-type doped with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ^-3 and a thickness of 50 to 400 nm.

Preferably, the GaInP window layer is n-type doped with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ^-3 and a thickness of 50 to 400 nm.

Preferably, the Ga _x1 In _1-x1 As base region is p-type doped with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ^-3 and a thickness of 1000 to 5000 nm.

Preferably, the Ga _x1 In _1-x1 As emission region is n-type doped with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm.

Preferably, the Ga _x2 In _1-x2 As base region is p-type doped with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ^-3 and a thickness of 1000 to 5000 nm.

Preferably, the Ga _x2 In _1-x2 As emission region is n-type doped with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm.

Preferably, the tunnel junction includes: an n-type GaAs layer and a p-type GaAs layer, the doping concentration is 1×10 ¹⁹ -1×10 ²¹ cm ^-3 , and the thickness is 10-100 nm.

Preferably, the n-type electrode contact layer is an n-type GaAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 200 nm.

As another optional structure, the battery epitaxial active layer is an InP-based battery active layer, which includes from bottom to top: p-type electrode contact layer, first junction GaInAsP sub-cell, tunnel junction, second junction GaInAsP sub-cell battery and n-type electrode contact layer.

Preferably, the first junction GaInAsP subcell includes from bottom to top: an InP back field, a Ga _y1 In _1-y1 As _z1 P _1-z1 base region, a Ga _y1 In _1-y1 As _z1 P _1-z1 emitter region, InP window layer, where 0≤y1≤0.5, 0≤z1≤1.

Preferably, the second junction GaInAsP sub-cell includes from bottom to top: InP back field, Ga _y2 In _1-y2 As _z2 P _1-z2 base region, Ga _y2 In _1-y2 As _z2 P _1-z2 emission region, InP window layer, where 0≤y2≤0.5, 0≤z2≤1.

Preferably, the p-type electrode contact layer is a p-type GaInAs layer with a doping concentration of 1×10 ¹⁸ -1×10 ¹⁹ cm ^-3 and a thickness of 100-200 nm.

Preferably, the InP back field is p-type doped with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ^-3 and a thickness of 50 to 400 nm.

Preferably, the InP window layer is n-type doped with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ^-3 and a thickness of 50 to 400 nm.

Preferably, the Ga _y1 In _1-y1 As _z1 P _1-z1 base region is p-type doped with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ^-3 and a thickness of 1000 to 5000 nm.

Preferably, the Ga _y1 In _1-y1 As _z1 P _1-z1 emitting region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm.

Preferably, the Ga _y2 In _1-y2 As _z2 P _1-z2 base region is p-type doped, with a doping concentration of 1×10 ¹⁶ to 1×10 ¹⁸ cm ^-3 and a thickness of 1000 to 5000 nm.

Preferably, the Ga _y2 In _1-y2 As _z2 P _1-z2 emitting region is n-type doped, with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 500 nm.

Preferably, the tunnel junction includes: an n-type InP layer and a p-type InP layer, the doping concentration is 1×10 ¹⁹ -1×10 ²¹ cm ^-3 , and the thickness is 10-100 nm.

Preferably, the n-type electrode contact layer is an n-type GaInAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ^-3 and a thickness of 100 to 200 nm.

Preferably, the material of the upper electrode and the bridging electrode is Au/Ge/Ag, with a thickness of 2-5 μm; the material of the lower electrode is Ti/Pd/Au/Ge/Au, with a thickness of 4-8 μm.

Preferably, the insulating layer is polyimide glue.

Preferably, the anti-reflection structure includes from bottom to top: titanium oxide/silicon oxide anti-reflection film, nano-array light-trapping structure.

The beneficial effects that the present invention has are:

1. The present invention combines the two technical paths of horizontal series connection and vertical series connection of traditional laser battery sub-cells, and invents a vertical 2-junction cascade structure laser battery assembly. The vertical 2-junction structure has strong adaptability to changes in laser light intensity and incident angle, and the horizontal cascaded series structure effectively increases the battery voltage. The battery module as a whole ensures high voltage while reducing the effective area loss of the battery caused by the isolation groove. In long-distance high-power laser wireless energy transmission applications, battery efficiency and applicability can be considered.

2. Fabricate a nano-array structure on the anti-reflection film. The light-trapping structure can extend the photon optical path, enhance the anti-reflection effect in the case of oblique laser incidence, and enhance the applicability of laser battery components in wireless energy transfer applications.

Description of drawings

Fig. 1 is a schematic cross-sectional structure diagram of a laser cell assembly in a preferred embodiment of the present invention.

Fig. 2 is a schematic top view of the laser cell assembly in a preferred embodiment of the present invention.

Fig. 3 is a schematic cross-sectional structure diagram of the epitaxial active layer of the laser cell assembly in the preferred embodiment of the present invention.

In the picture:

100. Insulating substrate;

200, lower electrode;

300. Cell epitaxial active layer;

310. P-type electrode contact layer;

320. A first junction Ga(In)As subcell or a first junction GaInAsP subcell;

321. GaInP back field or InP back field;

322. Ga _x1 In _1-x1 As base region or Ga _y1 In _1-y1 As _z1 P _1-z1 base region;

323. Ga _x1 In _1-x1 As emission area or Ga _y1 In _1-y1 As _z1 P _1-z1 emission area;

324. GaInP window layer or InP window layer;

330. Tunneling junction;

331. n-type GaAs or n-type InP;

332. p-type GaAs or p-type InP;

340. A second junction Ga(In)As subcell or a second junction GaInAsP subcell;

341. GaInP back field or InP back field;

342. Ga _x2 In _1-x2 As base region or Ga _y2 In _1-y2 As _z2 P _1-z2 base region;

343. Ga _x2 In _1-x2 As emission area or Ga _y2 In _1-y2 As _z2 P _1-z2 emission area;

344. GaInP window layer or InP window layer;

350. n-type electrode contact layer

400. Upper electrode

500. Anti-reflection structure

600, insulating layer

700. Bridge electrode

Detailed ways

In the following, the technical solutions in the embodiments of the present application will be described in detail in combination with the drawings in the embodiments of the present application, so as to further understand the content of the present invention.

Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the technical solutions in the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", etc. is based on the orientation or positional relationship shown in the drawings, and the use of "first", "second", etc. Words used to define components are only for the convenience of describing the present invention and simplifying the description, and should not be construed as limiting the present invention.

The object of the present invention is to provide a laser battery assembly, as shown in FIGS. 1 and 2 , including: an insulating substrate 100 , 9 laser battery units, isolation grooves, an insulating layer 600 , and a bridging electrode 700 .

The laser battery unit includes a lower electrode 200 , a battery epitaxial active layer 300 , an upper electrode 400 , and an anti-reflection structure 500 .

The isolation groove separates the adjacent laser battery units, the insulating layer 600 insulates and passivates the side walls of the laser battery units, and the bridging electrode 700 connects the upper and lower electrodes of the adjacent laser battery units to realize the electrical connection of the adjacent laser battery units. The battery cells are serially connected in series.

Wherein: the material of the insulating substrate 100 is one of silicon oxide, polyimide, and quartz.

Each laser cell has the same area.

Embodiment 1, the structure of a GaAs-based laser cell assembly for receiving the 780-850nm band is as follows:

As shown in FIG. 3 , the battery epitaxial active layer 300 is a GaAs-based battery active layer, which includes from bottom to top: a p-type electrode contact layer 310, a first junction Ga(In)As subcell 320, a tunnel junction 330, a second junction A two-junction Ga(In)As sub-cell 340 and an n-type electrode contact layer 350 .

Wherein: the first junction Ga(In)As sub-cell 320 includes from bottom to top: GaInP back field 321, Ga _x1 In _1-x1 As base region 322, Ga _x1 In _1-x1 As emission region 323, GaInP window layer 324, where 0.8≤x1≤1.

The second junction Ga(In)As subcell 340 includes from bottom to top: GaInP back field 341, Ga _x2 In _1-x2 As base region 342, Ga _x2 In _1-x2 As emission region 343, GaInP window layer 344, wherein 0.8 ≤x2≤1.

The p-type electrode contact layer 310 is a p-type GaAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

The GaInP back fields 321 and 341 are p-type doped with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ⁻³ and a thickness of 50 to 400 nm.

The GaInP window layers 324 and 344 are n-type doped with a doping concentration of 1×10 ¹⁷ to 1×10 ¹⁸ cm ⁻³ and a thickness of 50 to 400 nm.

The Ga _x1 In _1-x1 As base region 322 is p-type doped, the doping concentration is 1×10 ¹⁶ ˜1×10 ¹⁸ cm ⁻³ , and the thickness is 1000˜5000 nm.

The Ga _x1 In _1-x1 As emission region 323 is n-type doped, the doping concentration is 1×10 ¹⁷ ˜1×10 ¹⁹ cm ⁻³ , and the thickness is 100˜500 nm.

The Ga _x2 In _1-x2 As base region 342 is p-type doped, the doping concentration is 1×10 ¹⁶ ˜1×10 ¹⁸ cm ⁻³ , and the thickness is 1000˜5000 nm.

The Ga _x2 In _1-x2 As emission region 343 is n-type doped, the doping concentration is 1×10 ¹⁷ ˜1×10 ¹⁹ cm ⁻³ , and the thickness is 100˜500 nm.

The tunnel junction includes: an n-type GaAs layer 334 and a p-type GaAs layer 332 with a doping concentration of 1×10 ¹⁹ ˜1×10 ²¹ cm ⁻³ and a thickness of 10˜100 nm.

The n-type electrode contact layer 350 is an n-type GaAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

The material of the upper electrode 400 and the bridging electrode 700 is Au/Ge/Ag, with a thickness of 2-5 μm; the material of the lower electrode 200 is Ti/Pd/Au/Ge/Au, with a thickness of 4-8 μm.

The insulating layer 600 is polyimide glue.

The anti-reflection structure 500 includes from bottom to top: titanium oxide/silicon oxide anti-reflection film, nano-array light trapping structure.

Embodiment 2, the structure of an InP-based laser cell assembly for receiving the 950-1600nm band is as follows:

As shown in FIG. 3 , the battery epitaxial active layer 300 is an InP-based battery active layer, which includes from bottom to top: a p-type electrode contact layer 310, a first junction GaInAsP sub-cell 320, a tunnel junction 330, a second junction GaInAsP sub-cell. Battery 340 , n-type electrode contact layer 350 .

Wherein, the first junction GaInAsP sub-cell 320 includes from bottom to top: InP back field 321, Ga _y1 In _1-y1 As _z1 P _1-z1 base area 322, Ga _y1 In _1-y1 As _z1 P _1-z1 base area Emitting region 323, InP window layer 324, where 0≤y1≤0.5, 0≤z1≤1.

The second junction GaInAsP sub-cell 340 includes from bottom to top: InP back field 341, Ga _y2 In _1-y2 As _z2 P _1-z2 base region 342, Ga _y2 In _1-y2 As _z2 P _1-z2 emitter region 343, InP The window layer 344, where 0≤y2≤0.5, 0≤z2≤1.

The p-type electrode contact layer 310 is a p-type InP layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

The InP back fields 321 and 341 are p-type doped, the doping concentration is 1×10 ¹⁷ ˜1×10 ¹⁸ cm ⁻³ , and the thickness is 50˜400 nm.

The InP window layers 324 and 344 are n-type doped, the doping concentration is 1×10 ¹⁷ ˜1×10 ¹⁸ cm ⁻³ , and the thickness is 50˜400 nm.

The Ga _y1 In _1-y1 As _z1 P _1-z1 base region 322 is p-type doped, the doping concentration is 1×10 ¹⁶ ˜1×10 ¹⁸ cm ⁻³ , and the thickness is 1000˜5000 nm.

The Ga _y1 In _1-y1 As _z1 P _1-z1 emission region 323 is n-type doped, the doping concentration is 1×10 ¹⁷ ˜1×10 ¹⁹ cm ⁻³ , and the thickness is 100˜500 nm.

The Ga _y2 In _1-y2 As _z2 P _1-z2 base region 342 is p-type doped, the doping concentration is 1×10 ¹⁶ ˜1×10 ¹⁸ cm ⁻³ , and the thickness is 1000˜5000 nm.

The Ga _y2 In _1-y2 As _z2 P _1-z2 emission region 343 is n-type doped, the doping concentration is 1×10 ¹⁷ ˜1×10 ¹⁹ cm ⁻³ , and the thickness is 100˜500 nm.

The tunnel junction includes: an n-type InP layer 334 and a p-type InP layer 332 with a doping concentration of 1×10 ¹⁹ ˜1×10 ²¹ cm ⁻³ and a thickness of 10˜100 nm.

The n-type electrode contact layer 350 is an n-type GaInAs layer with a doping concentration of 1×10 ¹⁸ to 1×10 ¹⁹ cm ⁻³ and a thickness of 100 to 200 nm.

The material of the upper electrode 400 and the bridging electrode 700 is Au/Ge/Ag, with a thickness of 2-5 μm; the material of the lower electrode 200 is Ti/Pd/Au/Ge/Au, with a thickness of 4-8 μm.

The insulating layer 600 is polyimide glue.

The anti-reflection structure 500 includes from bottom to top: titanium oxide/silicon oxide anti-reflection film, nano-array light trapping structure.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Any simple modifications made to the above embodiments according to the technical essence of the present invention, equivalent changes and modifications, all belong to this invention. within the scope of the technical solution of the invention.

Claims (6)

1. A laser cell assembly, comprising: the device comprises an insulating substrate, M laser battery units, an isolation groove, an insulating layer and a bridging electrode; wherein: m is a natural number greater than 0;

the laser battery unit comprises a lower electrode, a battery epitaxial active layer, an upper electrode and an antireflection structure;

the isolation groove separates adjacent laser battery cells, the side wall of each laser battery cell is insulated and passivated by the insulating layer, the upper electrode and the lower electrode of each adjacent laser battery cell are connected by the bridging electrode, the adjacent laser battery cells are electrically connected, and M laser battery cells are sequentially connected in series;

the battery epitaxial active layer is a GaAs-based battery active layer and comprises the following components from bottom to top: a p-type electrode contact layer, a first junction Ga (In) As subcell, a tunneling junction, a second junction Ga (In) As subcell, and an n-type electrode contact layer;

the first junction Ga (In) As subcell comprises from bottom to top: gaInP back field, ga _x1 In _1-x1 As base region, ga _x1 In _1-x1 An As emission region and a GaInP window layer, wherein x1 is more than or equal to 0.8 and less than or equal to 1;

the second junctionThe Ga (In) As subcell comprises from bottom to top: gaInP back field, ga _x2 In _1-x2 As base region, ga _x2 In _1-x2 An As emission region and a GaInP window layer, wherein x2 is more than or equal to 0.8 and less than or equal to 1;

the p-type electrode contact layer is a p-type GaAs layer with doping concentration of 1×10 ¹⁸ ～1×10 ¹⁹ cm ^-3 The thickness is 100-200 nm;

the GaInP back field is p-type doped with doping concentration of 1×10 ¹⁷ ～1×10 ¹⁸ cm ^-3 The thickness is 50-400 nm;

the GaInP window layer is doped with n type with doping concentration of 1×10 ¹⁷ ～1×10 ¹⁸ cm ^-3 The thickness is 50-400 nm;

the Ga _x1 In _1-x1 The As base region is doped with p type, and the doping concentration is 1 multiplied by 10 ¹⁶ ～1×10 ¹⁸ cm ^-3 The thickness is 1000-5000 nm;

the Ga _x1 In _1-x1 The As emitting region is n-type doped with doping concentration of 1×10 ¹⁷ ～1×10 ¹⁹ cm ^-3 The thickness is 100-500 nm;

the Ga _x2 In _1-x2 The As base region is doped with p type, and the doping concentration is 1 multiplied by 10 ¹⁶ ～1×10 ¹⁸ cm ^-3 The thickness is 1000-5000 nm;

the Ga _x2 In _1-x2 The As emitting region is n-type doped with doping concentration of 1×10 ¹⁷ ～1×10 ¹⁹ cm ^-3 The thickness is 100-500 nm;

the tunneling junction includes: n-type GaAs and p-type GaAs layers with doping concentrations of 1×10 ¹⁹ ～1×10 ²¹ cm ^-3 The thickness is 10-100 nm;

the n-type electrode contact layer is an n-type GaAs layer with doping concentration of 1×10 ¹⁸ ～1×10 ¹⁹ cm ^-3 The thickness is 100-200 nm;

or, the battery epitaxial active layer is an InP-based battery active layer, which comprises from bottom to top: a p-type electrode contact layer, a first junction GaInAsP subcell, a tunneling junction, a second junction GaInAsP subcell, and an n-type electrode contact layer;

the first junction GaInAsP subcell includes from bottom to top: inP back surface field, ga _y1 In _1-y1 As _z1 P _1-z1 Base region, ga _y1 In _{1- y1} As _z1 P _1-z1 An emission region and an InP window layer, wherein y1 is more than or equal to 0 and less than or equal to 0.5, and z1 is more than or equal to 0 and less than or equal to 1;

the second junction GaInAsP subcell includes from bottom to top: inP back surface field, ga _y2 In _1-y2 As _z2 P _1-z2 Base region, ga _y2 In _{1- y2} As _z2 P _1-z2 An emission region and an InP window layer, wherein y2 is more than or equal to 0 and less than or equal to 0.5, and z2 is more than or equal to 0 and less than or equal to 1;

the p-type electrode contact layer is a p-type GaInAs layer with doping concentration of 1×10 ¹⁸ ～1×10 ¹⁹ cm ^-3 The thickness is 100-200 nm;

the InP back field is p-type doped with doping concentration of 1×10 ¹⁷ ～1×10 ¹⁸ cm ^-3 The thickness is 50-400 nm;

the InP window layer is n-type doped with doping concentration of 1×10 ¹⁷ ～1×10 ¹⁸ cm ^-3 The thickness is 50-400 nm;

the Ga _y1 In _1-y1 As _z1 P _1-z1 The base region is doped with p-type material with doping concentration of 1×10 ¹⁶ ～1×10 ¹⁸ cm ^-3 The thickness is 1000-5000 nm;

the Ga _y1 In _1-y1 As _z1 P _1-z1 The emitter region is doped n-type with doping concentration of 1×10 ¹⁷ ～1×10 ¹⁹ cm ^-3 The thickness is 100-500 nm;

the Ga _y2 In _1-y2 As _z2 P _1-z2 The base region is doped with p-type material with doping concentration of 1×10 ¹⁶ ～1×10 ¹⁸ cm ^-3 The thickness is 1000-5000 nm;

the Ga _y2 In _1-y2 As _z2 P _1-z2 The emitter region is doped n-type with doping concentration of 1×10 ¹⁷ ～1×10 ¹⁹ cm ^-3 The thickness is 100-500 nm;

the tunneling junction includes: n-type InP and p-type InPA layer with a doping concentration of 1X 10 ¹⁹ ～1×10 ²¹ cm ^-3 The thickness is 10-100 nm;

the n-type electrode contact layer is an n-type GaInAs layer with doping concentration of 1×10 ¹⁸ ～1×10 ¹⁹ cm ^-3 The thickness is 100-200 nm.

2. The laser cell assembly of claim 1, wherein: the insulating substrate is made of one of silicon oxide, polyimide and quartz.

3. The laser cell assembly of claim 1, wherein: the areas of the M laser battery cells are the same.

4. The laser cell assembly of claim 1, wherein: the upper electrode and the bridging electrode are made of Au/Ge/Ag, and the thickness is 2-5 mu m; the lower electrode is made of Ti/Pd/Au/Ge/Au, and the thickness is 4-8 mu m.

5. The laser cell assembly of claim 1, wherein: the insulating layer is polyimide glue.

6. The laser cell assembly of claim 1, wherein: the anti-reflection structure comprises from bottom to top: titanium oxide/silicon oxide antireflection film and nano array light trapping structure.