[go: up one dir, main page]

CN114220729B - Preparation method for improving the quality of high electron mobility transistor epitaxial wafer - Google Patents

Preparation method for improving the quality of high electron mobility transistor epitaxial wafer Download PDF

Info

Publication number
CN114220729B
CN114220729B CN202111215486.7A CN202111215486A CN114220729B CN 114220729 B CN114220729 B CN 114220729B CN 202111215486 A CN202111215486 A CN 202111215486A CN 114220729 B CN114220729 B CN 114220729B
Authority
CN
China
Prior art keywords
layer
aln
quality
aln layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202111215486.7A
Other languages
Chinese (zh)
Other versions
CN114220729A (en
Inventor
蒋媛媛
刘旺平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boe Huacan Optoelectronics Zhejiang Co ltd
Original Assignee
Boe Huacan Optoelectronics Zhejiang Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boe Huacan Optoelectronics Zhejiang Co ltd filed Critical Boe Huacan Optoelectronics Zhejiang Co ltd
Priority to CN202111215486.7A priority Critical patent/CN114220729B/en
Publication of CN114220729A publication Critical patent/CN114220729A/en
Application granted granted Critical
Publication of CN114220729B publication Critical patent/CN114220729B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The disclosure provides a preparation method for improving the quality of a transistor epitaxial wafer with high electron mobility, and belongs to the technical field of semiconductor devices. And sequentially growing a first AlN layer and a second AlN layer on the substrate, wherein the growth temperature of the second AlN layer is 100-300 ℃ higher than that of the first AlN layer, and stress is released to improve the quality. In the process of growing the second AlN layer, ar is used as carrier gas for growth, so that plane movement of Al atoms is promoted, and growth uniformity is improved. And H 2 is processed to reduce dislocation under high temperature condition on an AlN film layer formed in the process of growing the second AlN layer, the quality of the second AlN layer is improved, the quality of the first AlN layer, the second AlN layer and the grown AlGaN buffer layer can also be improved, and the quality of the bottom structure is improved, so that the quality of the high electron mobility transistor epitaxial wafer finally obtained by continuous growth on the bottom structure can be improved.

Description

Preparation method for improving quality of high electron mobility transistor epitaxial wafer
Technical Field
The present disclosure relates to the field of semiconductor devices, and in particular, to a method for improving the quality of a transistor epitaxial wafer with high electron mobility.
Background
HEMTs (High Electron Mobility Transistor, high electron mobility transistors) are a type of heterojunction field effect transistor that is widely used in a variety of electrical appliances. The HEMT epitaxial wafer is a basis for preparing HEMT devices, and comprises a substrate, and an AlN layer, an AlGaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a GaN cover layer which are sequentially laminated on the substrate.
When the AlN layer grows on the substrate, the Al atoms have a high surface adhesion coefficient, so that the surface migration capability of the Al atoms is weak in the growth process of the AlN layer or the AlGaN layer with high Al composition, and if the Al atoms do not have enough energy to migrate to nucleation positions with lowest energy such as steps, kinks and the like, the Al atoms can serve as nucleation points at initial positions and can grow into islands to form a three-dimensional growth mode. Defects such as dislocation and grain boundary with high density are generated around the islands during the island growth. The two adjacent three-dimensional islands which continue to grow and merge can generate tensile stress, which can cause rough surface and even crack formation of the epitaxial layer. The quality of the AlN layer and the AlGaN buffer layer directly grown on the substrate is poor, and the poor quality of the bottom layer can lead to the quality of the finally obtained high-electron-mobility transistor epitaxial wafer.
Disclosure of Invention
The embodiment of the disclosure provides a preparation method for improving the quality of a high electron mobility transistor epitaxial wafer, which can improve the crystal quality of an AlN layer and an AlGaN buffer layer so as to improve the quality of the high electron mobility transistor epitaxial wafer. The technical scheme is as follows:
the embodiment of the disclosure provides a high electron mobility transistor epitaxial wafer, and a preparation method for improving the quality of the high electron mobility transistor epitaxial wafer comprises the following steps:
Providing a substrate;
Sequentially growing a first AlN layer and a second AlN layer on the substrate, wherein the growth temperature of the second AlN layer is 100-300 ℃ higher than that of the first AlN layer;
sequentially growing an AlGaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer on the second AlN layer;
Growing the second AlN layer, comprising:
introducing an Al source and a reaction gas into the reaction cavity by taking argon as a carrier gas so as to grow an AlN film layer;
Closing an Al source and a reaction gas;
Introducing hydrogen into the reaction cavity at 1050-1250 ℃ to treat the AlN film layer;
Repeating the steps until the second AlN layer is obtained.
Optionally, the thickness of each AlN film layer is 5-10 nm.
Optionally, hydrogen is introduced into the reaction cavity at the temperature of 1050-1250 ℃ to treat the AlN film layer for 5-10 s.
Optionally, the thickness of the second AlN layer is 100-200 nm.
Optionally, growing the AlGaN buffer layer includes:
argon is used as carrier gas, and Al source, ga source and reaction gas are introduced into the reaction cavity to grow AlGaN film layer;
closing an Al source, a Ga source and a reaction gas;
introducing hydrogen into the reaction cavity at 1050-1250 ℃ to treat the AlGaN film layer;
Repeating the steps until the AlGaN layer is obtained.
Optionally, the thickness of the AlGaN film layer is 20-50 nm.
Optionally, the introducing an Al source, a Ga source and a reaction gas into the reaction chamber with argon as a carrier gas to grow the AlGaN film layer, further includes:
Argon is used as carrier gas, and Al source, ga source, fe source and reaction gas are introduced into the reaction cavity to grow AlGaN film layer.
Optionally, the flow rate of the Fe source is 50-200sccm.
Optionally, the growth temperature of the first AlN layer is 800-1000 ℃, the growth temperature of the second AlN layer is 1050-1250 ℃, and the thickness of the first AlN layer is 50-100 nm.
Optionally, the preparation method further comprises:
and pre-paving a layer of Al atoms on the substrate before the first AlN layer and the second AlN layer are sequentially grown on the substrate.
The technical scheme provided by the embodiment of the disclosure has the beneficial effects that:
And sequentially growing a first AlN layer and a second AlN layer on the substrate, wherein the growth temperature of the second AlN layer is 100-300 ℃ higher than that of the first AlN layer, the first AlN layer is taken as a basis, the second AlN layer with higher subsequent growth temperature is used for releasing certain stress, ensuring better quality of the first AlN layer and the second AlN layer, and the first AlN layer can be transited to the second AlN layer to establish a better foundation of the bottom structure. In the process of growing the second AlN layer, ar is used as carrier gas for growth, compared with common N 2 or H 2 carrier gas, ar has larger atomic mass, can provide higher momentum, can improve the surface migration capability of Al atoms, and promotes the planar movement of the Al atoms, so that the whole of the first AlN layer and the second AlN layer can grow in a film shape, the whole crystal quality growth can be more uniform, and the surface flatness is higher. And the AlN film layer formed in the second AlN layer growing process is closed, the Al source and the reaction gas are introduced into the reaction cavity for treatment at the temperature of 1050-1250 ℃, H 2 has certain etching property under the high-temperature condition, the surface of the epitaxial layer can be recrystallized after being etched, and the edge dislocation density formed in the AlN growing process can be reduced after argon is used as carrier gas, so that the crystal quality of the epitaxial layer is improved. The quality of the first AlN layer and the second AlN layer is improved, the quality of the first AlN layer, the second AlN layer and the grown AlGaN buffer layer can be improved, and the quality of the bottom structure can be improved, so that the quality of the high electron mobility transistor epitaxial wafer which is finally obtained by continuous growth on the bottom structure can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a flowchart of a preparation method for improving the quality of a high electron mobility transistor epitaxial wafer according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a high electron mobility transistor epitaxial wafer according to an embodiment of the present disclosure;
fig. 3 is a flowchart of another method for improving the quality of a high electron mobility transistor epitaxial wafer according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of another high electron mobility transistor epitaxial wafer provided in an embodiment of the present disclosure.
Detailed Description
For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.
Fig. 1 is a flowchart of a preparation method for improving the quality of a high electron mobility transistor epitaxial wafer according to an embodiment of the present disclosure, where, as shown in fig. 1, the preparation method for improving the quality of a high electron mobility transistor epitaxial wafer includes:
s101, providing a substrate.
And S102, sequentially growing a first AlN layer and a second AlN layer on the substrate, wherein the growth temperature of the second AlN layer is 100-300 ℃ higher than that of the first AlN layer. The second AlN layer is grown by introducing an Al source and a reaction gas into a reaction cavity by taking argon as carrier gas, so as to grow the AlN film layer, closing the Al source and the reaction gas, introducing hydrogen into the reaction cavity at the temperature of 1050-1250 ℃ to treat the AlN film layer, and repeating the steps until the second AlN layer is obtained.
And S103, sequentially growing an AlGaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer on the second AlN layer.
And sequentially growing a first AlN layer and a second AlN layer on the substrate, wherein the growth temperature of the second AlN layer is 100-300 ℃ higher than that of the first AlN layer, the first AlN layer is taken as a basis, the second AlN layer with higher subsequent growth temperature is used for releasing certain stress, ensuring better quality of the first AlN layer and the second AlN layer, and the first AlN layer can be transited to the second AlN layer to establish a better foundation of the bottom structure. In the process of growing the second AlN layer, ar is used as carrier gas for growth, compared with common N 2 or H 2 carrier gas, ar has larger atomic mass, can provide higher momentum, can improve the surface migration capability of Al atoms, and promotes the planar movement of the Al atoms, so that the whole of the first AlN layer and the second AlN layer can grow in a film shape, the whole crystal quality growth can be more uniform, and the surface flatness is higher. And the AlN film layer formed in the second AlN layer growing process is closed, the Al source and the reaction gas are introduced into the reaction cavity for treatment at the temperature of 1050-1250 ℃, H 2 has certain etching property under the high-temperature condition, the surface of the epitaxial layer can be recrystallized after being etched, and the edge dislocation density formed in the AlN growing process can be reduced after argon is used as carrier gas, so that the crystal quality of the epitaxial layer is improved. The quality of the first AlN layer and the second AlN layer is improved, the quality of the first AlN layer, the second AlN layer and the grown AlGaN buffer layer can be improved, and the quality of the bottom structure can be improved, so that the quality of the high electron mobility transistor epitaxial wafer which is finally obtained by continuous growth on the bottom structure can be improved.
When conventional N 2 or H 2 is used as a carrier gas, al atoms cannot obtain enough energy to migrate to nucleation sites, so that an AlN layer (like an AlGaN buffer layer) is in a three-dimensional growth mode, three-dimensional islands are formed under the three-dimensional growth mode, two-dimensional planar growth is laterally uniform, and the three-dimensional islands generate tensile stress during merging, which may cause roughness and even cracks on the surface of an epitaxial layer. According to the method, argon is used as carrier gas, the growth state of the second AlN layer is close to the two-dimensional growth state, so that the growth uniformity and the flatness can be effectively improved, the occurrence of tensile stress and the density of cracks caused by three-dimensional growth are reduced, and the quality of the second AlN layer can be effectively improved.
Optionally, the growth temperature of the first AlN layer is 800-1000 ℃, the growth temperature of the second AlN layer is 1050-1250 ℃, and the thickness of the first AlN layer is 50-100 nm.
The growth temperature of the first AlN layer and the growth temperature of the second AlN layer are respectively in the above ranges, the first AlN layer can be slowly deposited on the substrate to ensure the surface flatness of the obtained first AlN layer and the crystal quality of the first AlN layer, and the thickness of the first AlN layer is 50-100 nm to ensure the stability of the basic structure and the transition to the second AlN layer. The second AlN layer can stably grow on the first AlN layer, and certain stress is released, so that the overall quality of the finally obtained first AlN layer and second AlN layer is improved. On the other hand, the growth temperature of the second AlN layer is in the range, so that the hydrogen treatment in the growth process of the second AlN layer can be facilitated, the temperature does not need to be frequently regulated, and the growth cost of the second AlN layer can be effectively controlled. The quality of the first AlN layer and the second AlN layer is improved, and meanwhile, the preparation cost of the first AlN layer and the second AlN layer is not excessively improved.
Optionally, the growth pressure of the first AlN layer and the second AlN layer is 40-70 mbar. The stable growth of the first AlN layer and the second AlN layer can be ensured.
Optionally, the thickness of each AlN film layer is 5-10 nm.
The thickness of each AlN film layer is in the range, so that the AlN film layer can grow uniformly, the surface flatness of the AlN film layer is high, the subsequent hydrogen treatment is matched, the surface dislocation density of the AlN film layer can be effectively reduced, and the crystal quality of the finally obtained second AlN layer is improved.
Optionally, hydrogen is introduced into the reaction cavity at the temperature of 1050-1250 ℃ to treat the AlN film for 5-10 s.
The duration of the hydrogen treatment is within the range, so that the surface of the AlN film layer is fully treated by the hydrogen, and the AlN film layer is fully annealed within the time, so that the crystal quality of the AlN film layer can be further improved.
Optionally, the thickness of the second AlN layer is 100-200 nm.
The thickness of the second AlN layer is in the range, the quality of the second AlN layer is good, a good growth basis of the AlGaN buffer layer can be provided, and the quality of the AlGaN buffer layer is improved.
For ease of understanding, fig. 2 may be provided herein, and fig. 2 is a schematic structural diagram of a high electron mobility transistor epitaxial wafer according to an embodiment of the disclosure, and referring to fig. 2, it can be known that the high electron mobility transistor epitaxial wafer includes a substrate 1, and a first AlN layer 2, a second AlN layer 3, an AlGaN buffer layer 4, a GaN channel layer 5, an AlGaN barrier layer 6, and a GaN cap layer 7 sequentially stacked on the substrate 1.
Fig. 3 is a flowchart of another preparation method for improving the quality of a high electron mobility transistor epitaxial wafer according to an embodiment of the present disclosure, and referring to fig. 3, it can be known that the preparation method for improving the quality of a high electron mobility transistor epitaxial wafer may include:
s201, a substrate is provided.
S202, pre-paving a layer of Al atoms on the substrate before sequentially growing a first AlN layer and a second AlN layer on the substrate.
Because the lateral mobility of Al atoms is relatively low, the pre-spreading of the Al atomic layer is beneficial to improving the flatness of the subsequent first AlN layer, and further improving the uniformity of the whole epitaxial layer. The method is beneficial to improving the overall quality of HEMT epitaxial wafers.
Optionally, pre-introducing an Al source with the flow of 50-200 sccm into the reaction cavity at the temperature of 1000-1100 ℃ for 10 s-100 s so as to lay an Al atomic layer on the upper layer of the substrate.
Under the above temperature conditions, an Al source with the flow of 50-200 sccm for a certain period of time is introduced into the reaction cavity, so that a layer of stable Al atomic layer with moderate thickness can be laminated on the substrate, and the stable and uniform growth of the subsequent AlN layer is ensured.
And S203, sequentially growing a first AlN layer and a second AlN layer on the substrate, wherein the growth temperature of the second AlN layer is 100-300 ℃ higher than that of the first AlN layer. The second AlN layer is grown by introducing an Al source and a reaction gas into a reaction cavity by taking argon as carrier gas, so as to grow the AlN film layer, closing the Al source and the reaction gas, introducing hydrogen into the reaction cavity at the temperature of 1050-1250 ℃ to treat the AlN film layer, and repeating the steps until the second AlN layer is obtained.
Step S203 may refer to step S102 in fig. 1, and thus will not be described herein.
And S204, growing an AlGaN buffer layer on the second AlN layer.
Optionally, step S204 may include introducing Al source, ga source and reaction gas into the reaction chamber with argon as carrier gas to grow AlGaN film layer, closing the Al source, ga source and reaction gas, introducing hydrogen into the reaction chamber at 1050-1250 ℃ to treat AlGaN film layer, and repeating the above steps until AlGaN layer is obtained.
In the growth process of the AlGaN buffer layer, the growth uniformity and the surface flatness of the AlGaN buffer layer can be improved by adopting the growth mode similar to that of the second AlN layer, and the structure such as gallium nitride which grows on the basis of the surface of the AlGaN buffer layer can be improved while the crystal quality of the AlGaN buffer layer is improved.
Optionally, the thickness of the AlGaN film layer is 20-50 nm.
The thickness of each AlGaN film layer is in the range, so that the growth of the AlGaN film layers is uniform, the surface flatness of the AlGaN film layers is high, the subsequent hydrogen treatment is matched, the surface dislocation density of the AlGaN film layers can be effectively reduced, and the crystal quality of the finally obtained second AlGaN film layers is improved.
Optionally, hydrogen is introduced into the reaction cavity at the temperature of 1050-1250 ℃ to treat the AlGaN film layer for 5-10 s.
The duration of the hydrogen treatment is in the range, so that the hydrogen can be ensured to sufficiently treat the surface of the AlGaN film, and the AlGaN film is sufficiently annealed in the time, so that the crystal quality of the AlGaN film can be further improved.
Optionally, the thickness of the AlGaN buffer layer is 100-200 nm.
The thickness of the AlGaN buffer layer is in the range, the AlGaN buffer layer has good quality, and a good growth foundation can be provided for a subsequent growth structure.
Optionally, argon is used as carrier gas to introduce an Al source, a Ga source and a reaction gas into the reaction cavity so as to grow the AlGaN film layer, and the AlGaN film layer further comprises:
Argon is used as carrier gas, and Al source, ga source, fe source and reaction gas are introduced into the reaction cavity to grow AlGaN film layer.
The doping of Fe element in the AlGaN film layer can realize the high resistance of the AlGaN buffer layer, and is convenient for transition to the subsequent high-resistance gallium nitride material.
On the premise that argon is used as carrier gas to be introduced into the Al source, the Ga source, the Fe source and the reaction gas to grow the AlGaN film, the Al source, the Ga source, the Fe source and the reaction gas are also required to be closed simultaneously in the subsequent hydrogen treatment process of the AlGaN film.
Alternatively, the flow rate of the Fe source is 50-200sccm.
The flow rate of the Fe source is in the above range, and an AlGaN buffer layer with better quality can be obtained.
Illustratively, the resulting AlGaN buffer layer has a Fe doping concentration of between 10 18～1020cm-3. The AlGaN buffer layer has better quality, and can realize good transition with the subsequent high-resistance gallium nitride material.
Optionally, the growth condition of the AlGaN buffer layer comprises that the growth temperature is 1050-1250 ℃ and the pressure is 40-70 mbar. The AlGaN buffer layer with better quality can be obtained.
In one implementation provided by the present disclosure, the growth temperature of the second AlN layer may be equal to the growth temperature of the AlGaN buffer layer. The second AlN layer and the AlGaN buffer layer with better quality are obtained, and meanwhile, the temperature change is not required to be regulated, so that the preparation cost of the second AlN layer and the AlGaN buffer layer can be controlled.
And S205, growing a GaN high-resistance layer on the AlGaN buffer layer.
Optionally, the growth condition of the GaN high-resistance layer comprises that the growth temperature is 950-1050 ℃ and the pressure is 40-70 mbar. The GaN high-resistance layer with better quality can be obtained.
Illustratively, the GaN high-resistance layer has a thickness of 1.0-1.5 micrometers, and is doped with carbon elements in a range of 1019cm -3～1020cm-3. And improving the quality of the HEMT epitaxial wafer finally obtained.
And S206, growing a GaN channel layer on the GaN high-resistance layer.
Optionally, the growth condition of the GaN channel layer comprises that the growth temperature is 1050-1150 ℃ and the pressure is 150-250 mbar. A GaN channel layer of good quality can be obtained.
Illustratively, the GaN channel layer has a thickness between 1.0 and 1.5 microns. And improving the quality of the HEMT epitaxial wafer finally obtained. The quality of the obtained GaN channel layer is better.
And S207, growing an AlN inserting layer on the GaN channel layer.
Optionally, the growth temperature of the AlN insert layer is 1050-1150 ℃, and the growth pressure of the AlN insert layer is 40-70 mbar. An AlN intercalation layer of good quality can be obtained.
And S208, growing an AlGaN barrier layer on the AlN inserting layer.
Optionally, the growth temperature of the AlGaN barrier layer is 1050-1150 ℃, and the growth pressure of the AlGaN barrier layer is 40-70 mbar. The quality of the obtained AlGaN barrier layer is better.
In one implementation provided by the present disclosure, the growth temperature of the AlGaN barrier layer may be 1020 ℃. The present disclosure is not limited in this regard.
And S209, growing a GaN cap layer on the AlGaN barrier layer.
Optionally, the growth temperature of the GaN cover layer is 1050-1150 ℃, and the growth pressure of the AlGaN barrier layer is 40-70 mbar. The quality of the obtained GaN cap layer is better.
And S210, reducing the temperature of the reaction cavity, and reducing the temperature to room temperature in a nitrogen atmosphere to finish epitaxial growth.
Step S210 can release the thermal stress in the HEMT epitaxial wafer to a certain extent, and improve the quality of the HEMT epitaxial wafer finally obtained.
It should be noted that, in the embodiment of the present disclosure, veecoK 465i or C4 or RB MOCVD (Metal Organic Chemical Vapor Deposition ) equipment is used to implement the method for growing LEDs. High-purity H 2 (hydrogen) or high-purity N 2 (nitrogen) or mixed gas of high-purity H 2 and high-purity N 2 is adopted as carrier gas, high-purity NH 3 is adopted as an N source, trimethylgallium (TMGa) and triethylgallium (TEGa) are adopted as gallium sources, trimethylindium (TMIn) is adopted as an indium source, silane (SiH 4) is adopted as an N-type dopant, trimethylaluminum (TMAl) is adopted as an aluminum source, magnesium dichloride (CP 2 Mg) is adopted as a P-type dopant, and ferrocene (Cp 2 Fe) is adopted as a precursor of an iron (Fe) source.
Fig. 4 is a schematic structural diagram of another hemt epitaxial wafer according to an embodiment of the present disclosure, and referring to fig. 4, it can be seen that the hemt epitaxial wafer may include a substrate 1, and a first AlN layer 2, a second AlN layer 3, an AlGaN buffer layer 4, a GaN high-resistance layer 8, a GaN channel layer 5, an AlN insertion layer 9, an AlGaN barrier layer 6 and a GaN cap layer 7 sequentially stacked on the substrate 1.
Optionally, the thickness of the second AlN layer 3 is 150-300 nm. The second AlN layer 3 can be guaranteed to be good in quality, and a good growth foundation is provided for the HEMT epitaxial wafer.
Illustratively, the thickness of the AlGaN buffer layer 4 is 1-1.5 microns. The quality of the obtained AlGaN buffer layer 4 is better.
The GaN high-resistance layer 8 has a thickness of 300 to 600nm, for example. Can play a good role in buffering.
Alternatively, the thickness of the GaN channel layer 5 may be 100 to 400nm.
The GaN channel layer 5 has proper thickness and reasonable cost, and can effectively improve the quality of the high electron mobility transistor epitaxial wafer.
In one implementation provided by the present disclosure, the GaN channel layer 5 may have a thickness of 400nm. The present disclosure is not limited in this regard.
In fig. 4, compared with the structure of the HEMT epitaxial wafer in fig. 1, the AlGaN buffer layer 4, the GaN high-resistance layer 8 and the AlN insert layer 9 are added, so that on one hand, the negative effect caused by lattice mismatch of the bottom layer is less. On the other hand, the interface between the AlN insertion layer 9 and the GaN channel layer 5 and the interface between the AlN insertion layer 9 and the AlGaN barrier layer 6 form two-dimensional electron gas, and the accumulation of carriers at the interface is increased by the two-dimensional electron gas, so that the use effect of the high electron mobility transistor epitaxial wafer can be ensured.
Alternatively, the AlN insert layer 9 has a thickness of 0.5 to 2nm.
The thickness of the AlN insertion layer 9 is within the above range, the two-dimensional electron gas can be effectively traveled, and the cost is not excessively increased.
In one implementation provided by the present disclosure, the AlN insertion layer 9 may be 2nm thick. The present disclosure is not limited in this regard.
Optionally, the thickness of the AlGaN barrier layer 6 may be 15-40 nm. The quality of the high electron mobility transistor epitaxial wafer can be ensured.
In one implementation provided by the present disclosure, the AlGaN barrier layer 6 may be 100nm thick. The present disclosure is not limited in this regard.
The GaN cap layer 7 may be a P-type GaN layer, for example. Is convenient for preparation and acquisition.
Optionally, the thickness of the GaN cap layer 7 is 3-10 nm. The quality of the resulting GaN cap layer 7 overall is better.
Illustratively, the impurity within the GaN cap layer 7 is Mg. Is convenient for preparation and acquisition.
It should be noted that fig. 4 is only one implementation manner of the hemt epitaxial wafer provided in the embodiments of the present disclosure, and in other implementations provided in the present disclosure, the hemt epitaxial wafer may be another form of hemt epitaxial wafer including a reflective layer, which is not limited in this disclosure.
The foregoing disclosure is not intended to be limited to any form of embodiment, but is not intended to limit the disclosure, and any simple modification, equivalent changes and adaptations of the embodiments according to the technical principles of the disclosure are intended to be within the scope of the disclosure, as long as the modifications or equivalent embodiments are possible using the technical principles of the disclosure without departing from the scope of the disclosure.

Claims (10)

1. The preparation method for improving the quality of the high electron mobility transistor epitaxial wafer is characterized by comprising the following steps of:
Providing a substrate;
Sequentially growing a first AlN layer and a second AlN layer on the substrate, wherein the growth temperature of the second AlN layer is 100-300 ℃ higher than that of the first AlN layer;
sequentially growing an AlGaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer on the second AlN layer;
Growing the second AlN layer, comprising:
introducing an Al source and a reaction gas into the reaction cavity by taking argon as a carrier gas so as to grow an AlN film layer;
Closing an Al source and a reaction gas;
Introducing hydrogen into the reaction cavity at 1050-1250 ℃ to treat the AlN film layer;
Repeating the steps until the second AlN layer is obtained.
2. The method for improving the quality of a high electron mobility transistor epitaxial wafer according to claim 1, wherein the thickness of each AlN film layer is 5-10 nm.
3. The method for improving the quality of the high electron mobility transistor epitaxial wafer according to claim 1, wherein the AlN film layer is treated by introducing hydrogen into the reaction cavity at the temperature of 1050-1250 ℃ for 5-10 s.
4. The method for improving the quality of a high electron mobility transistor epitaxial wafer according to any one of claims 1 to 3, wherein the thickness of the second AlN layer is 100 to 200nm.
5. The method for improving the quality of a high electron mobility transistor epitaxial wafer according to any one of claims 1 to 3, wherein growing the AlGaN buffer layer comprises:
argon is used as carrier gas, and Al source, ga source and reaction gas are introduced into the reaction cavity to grow AlGaN film layer;
closing an Al source, a Ga source and a reaction gas;
introducing hydrogen into the reaction cavity at 1050-1250 ℃ to treat the AlGaN film layer;
Repeating the steps until the AlGaN layer is obtained.
6. The method for improving the quality of a high electron mobility transistor epitaxial wafer according to claim 5, wherein the thickness of the AlGaN film layer is 20-50 nm.
7. The method for improving the quality of a high electron mobility transistor epitaxial wafer according to claim 5, wherein the step of introducing an Al source, a Ga source and a reaction gas into the reaction chamber with argon as a carrier gas to grow an AlGaN film layer, further comprises:
Argon is used as carrier gas, and Al source, ga source, fe source and reaction gas are introduced into the reaction cavity to grow AlGaN film layer.
8. The method for manufacturing a high electron mobility transistor epitaxial wafer according to claim 7, wherein the flow rate of the Fe source is 50-200sccm.
9. The method for improving the quality of a transistor epitaxial wafer with high electron mobility according to any one of claims 1 to 3, wherein,
The growth temperature of the first AlN layer is 800-1000 ℃, the growth temperature of the second AlN layer is 1050-1250 ℃, and the thickness of the first AlN layer is 50-100 nm.
10. The method for improving the quality of a high electron mobility transistor epitaxial wafer according to any one of claims 1 to 3, further comprising:
and pre-paving a layer of Al atoms on the substrate before the first AlN layer and the second AlN layer are sequentially grown on the substrate.
CN202111215486.7A 2021-10-19 2021-10-19 Preparation method for improving the quality of high electron mobility transistor epitaxial wafer Active CN114220729B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111215486.7A CN114220729B (en) 2021-10-19 2021-10-19 Preparation method for improving the quality of high electron mobility transistor epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111215486.7A CN114220729B (en) 2021-10-19 2021-10-19 Preparation method for improving the quality of high electron mobility transistor epitaxial wafer

Publications (2)

Publication Number Publication Date
CN114220729A CN114220729A (en) 2022-03-22
CN114220729B true CN114220729B (en) 2025-03-11

Family

ID=80696142

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111215486.7A Active CN114220729B (en) 2021-10-19 2021-10-19 Preparation method for improving the quality of high electron mobility transistor epitaxial wafer

Country Status (1)

Country Link
CN (1) CN114220729B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116949564A (en) * 2022-04-18 2023-10-27 中国科学院上海微系统与信息技术研究所 Single crystal AlN film on silicon-on-insulator substrate and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101580930A (en) * 2008-05-13 2009-11-18 北京大学 Growing method of AlN buffering layer
CN112795871A (en) * 2020-12-25 2021-05-14 至芯半导体(杭州)有限公司 Preparation method of AlN thin film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112928162B (en) * 2021-01-14 2023-06-09 华灿光电（浙江）有限公司 High electron mobility transistor epitaxial wafer and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101580930A (en) * 2008-05-13 2009-11-18 北京大学 Growing method of AlN buffering layer
CN112795871A (en) * 2020-12-25 2021-05-14 至芯半导体(杭州)有限公司 Preparation method of AlN thin film

Also Published As

Publication number Publication date
CN114220729A (en) 2022-03-22

Similar Documents

Publication Publication Date Title
CN112701160A (en) Gallium nitride-based high-electron-mobility transistor epitaxial wafer and preparation method thereof
CN108987256B (en) Growth method of p-type AlGaN semiconductor material
CN109802020A (en) A kind of GaN base light emitting epitaxial wafer and preparation method thereof
CN116960173B (en) High electron mobility transistor epitaxial structure, preparation method and HEMT device
CN112366261A (en) Light emitting diode epitaxial wafer and preparation method thereof
CN111009468A (en) Preparation method and application of semiconductor heterostructure
CN108847435A (en) A kind of LED epitaxial slice and preparation method thereof
CN106972058A (en) A kind of semiconductor devices and preparation method thereof
CN109659407A (en) A kind of GaN base light emitting epitaxial wafer and preparation method thereof
CN114220729B (en) Preparation method for improving the quality of high electron mobility transistor epitaxial wafer
CN114420754A (en) High electron mobility transistor epitaxial wafer with improved high resistance layer and preparation method thereof
CN114420756A (en) High electron mobility transistor epitaxial wafer with impurity blocking layer and preparation method thereof
CN114551563A (en) Nucleation layer structure, semiconductor device and manufacturing method of nucleation layer structure
CN116314510B (en) Composite non-doped AlGaN layer and preparation method, epitaxial wafer and LED
CN114512394B (en) Method for preparing high electron mobility transistor epitaxial wafer with improved crystal quality
CN108461589B (en) A kind of epitaxial wafer of light-emitting diode and its manufacturing method
CN117374100A (en) Gallium nitride material epitaxial structure based on silicon substrate and preparation method thereof
CN112864286B (en) Preparation method of light emitting diode epitaxial wafer
CN114649194A (en) Preparation method of boron-doped silicon substrate HEMT epitaxial wafer for improving crystal quality
CN116454184A (en) High-light-efficiency LED epitaxial wafer, preparation method thereof and LED
CN113488567B (en) Light emitting diode epitaxial wafer with composite transition layer and preparation method thereof
CN109920883A (en) Gallium nitride based LED epitaxial slice and its manufacturing method
CN111009579A (en) Semiconductor heterostructure and semiconductor device
CN115274818A (en) HEMT epitaxial wafer and preparation method thereof, HEMT device
CN115084329A (en) A kind of LED epitaxial wafer applied on Si substrate and its growth method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant