CN113594838A - High-power green light thin-film laser - Google Patents
High-power green light thin-film laser Download PDFInfo
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- CN113594838A CN113594838A CN202110893977.0A CN202110893977A CN113594838A CN 113594838 A CN113594838 A CN 113594838A CN 202110893977 A CN202110893977 A CN 202110893977A CN 113594838 A CN113594838 A CN 113594838A
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- green laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses a high-power green light thin-film laser, comprising: the optical fiber green laser unit comprises: the device comprises a green laser, a gain fiber, a first polarization laser gain system, a second polarization laser gain system, a polarization synthesis lens, a wavelength division multiplexing coupler and a reflector; the fiber green laser unit includes: energy is injected into an optical fiber circuit through a wavelength division multiplexing coupler, a gain optical fiber is used as an excitation medium of a laser, input laser can generate gain of exciting light in the gain optical fiber, and a reflecting mirror in a reflecting mirror and a semiconductor saturated absorption mirror form an optical cavity, so that the laser is subjected to mode selection and multiple reflections to provide a resonant cavity for a green laser; the semiconductor saturable absorber mirror absorption medium can absorb and saturate laser to generate high-energy pulse. The fiber laser is passively Q-switched, so that the periodic change of the loss in the cavity of the fiber laser is realized, and the pulse high-power output of the laser is realized.
Description
Technical Field
The invention relates to the technical field of research, development and manufacturing of green lasers, in particular to a high-power green light thin-film laser.
Background
Thin-chip lasers are a potential class of high-power laser sources, which have the major advantage of allowing very high pump power densities without too high a temperature rise in the crystal. The structure can generate almost uniform axial one-dimensional heat flow perpendicular to the surface of the disc under the action of a flat-top pumping beam of longitudinal pumping, thereby reducing the thermal lens effect. The thermal deposition of the gain medium can be effectively removed, and high efficiency and high beam quality are maintained while high-power laser output is obtained. The thickness of the laser crystal is generally about several hundred micrometers, and the length of the resonant cavity of the thin-film laser is very short, and the most typical resonant cavity of the thin-film laser has a length equal to the thickness of the thin-film medium itself, i.e. the front and back surfaces of the thin-film crystal are the two end mirrors of the micro-resonant cavity, which can be realized by coating films on the front and back surfaces. The thin-chip laser crystal is thin and the cavity length is short, so that the frequency interval of two longitudinal modes in the cavity is increased, the gain bandwidth is further exceeded, namely only one longitudinal mode exists in the width of a fluorescence spectral line, and single longitudinal mode laser oscillation is easily obtained.
The diode-pumped thin-chip laser has the advantages of small size, simple and compact structure, light weight and integration; in addition, under the action of particularly high pumping power density, namely under the condition of continuously increasing the injected pumping power, the temperature in the thin crystal is basically kept unchanged, so that the heat effect of the laser crystal is reduced to a great extent, and the beam quality of the output laser is improved; the heat flow generated by the laser medium in the sheet structure is along the axial direction of the laser oscillation, namely, the axial heat dissipation is adopted, so that the heat deposition on the laser medium can be quickly taken away, and the pumping efficiency is improved; most of the thin-chip lasers adopt a multi-pass pumping mode, namely pumping radiation light passes through the thin-chip crystal for multiple times, so that the laser crystal can absorb the power of the pumping light; the output power stability of the thin-chip laser is high, and the thin-chip laser can maintain high-efficiency operation, and is more suitable for industrial processing production due to high reliability and low cost. Due to the various advantages described above, diode pumped thin-chip lasers are very widely used. In the aspect of material micromachining, the output of a thin-chip laser of an LD pump is stable and has high power, and the quality of the output laser beam is good. However, the laser output power of the conventional thin-film laser cannot meet the use requirements with stability and is inconvenient to use, and therefore, a more specialized high-power green thin-film laser is needed to solve the above problems.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides a high-power green light thin-film laser.
In order to achieve the purpose, the invention adopts the technical scheme that: a high power green laser thin-film, comprising: a fiber green laser unit and a semiconductor saturable absorber, the fiber green laser unit comprising: the device comprises a green laser, a gain fiber, a first polarization laser gain system, a second polarization laser gain system, a polarization synthesis lens, a wavelength division multiplexing coupler and a reflector;
the optical fiber green laser unit includes: energy is injected into an optical fiber circuit through a wavelength division multiplexing coupler, the gain optical fiber is used as an excitation medium of the green laser, input laser can generate gain of exciting light in the gain optical fiber, and the reflecting mirror in the semiconductor saturated absorption mirror form an optical cavity, so that the laser is subjected to mode selection and multiple reflection to provide a resonant cavity for the green laser;
the semiconductor saturable absorber is a semiconductor saturable absorber mirror, and the semiconductor saturable absorber mirror absorbing medium can generate absorption saturation on laser to generate high-energy pulses.
In a preferred embodiment of the present invention, the polarization combining lens is configured to combine the oscillation light excited by the first polarization laser gain system and the oscillation light excited by the second polarization laser gain system into a laser beam.
In a preferred embodiment of the present invention, the first polarization laser gain system includes a first excitation device, a second excitation device and a first laser crystal.
In a preferred embodiment of the present invention, the second polarization laser gain system includes a third excitation device, a fourth excitation device, and a second laser crystal.
In a preferred embodiment of the present invention, the polarization direction of the oscillation light excited by the first laser crystal is vertical; the polarization direction of the oscillation light excited by the second laser crystal is in the horizontal direction.
In a preferred embodiment of the present invention, the gain fiber is doped with a rare earth element, and the rare earth element is one or more of yttrium and thulium.
In a preferred embodiment of the present invention, the green laser further includes a Q-switch and a green output mirror disposed on the path of the combined polarized light.
In a preferred embodiment of the present invention, the green laser further includes: the frequency doubling crystal is arranged on a reflection light path of the green light output mirror, and the plane mirror is arranged on one side of the frequency doubling crystal, which is far away from the green light output mirror.
In a preferred embodiment of the present invention, the polarization combining lens is configured to combine the oscillation light excited by the first polarization laser gain system and the oscillation light excited by the second polarization laser gain system into a laser beam.
In a preferred embodiment of the present invention, the normal direction of the polarization combining lens and the direction of the combined optical path form a brewster angle.
The invention solves the defects in the background technology, and has the following beneficial effects:
(1) the invention realizes the periodic change of the loss in the cavity of the fiber laser by passively modulating Q for the fiber laser, thereby realizing the pulse high-power output of the laser. The semiconductor saturated absorption mirror has the property of saturated absorption at the resonant wavelength, namely, the semiconductor saturated absorption mirror absorbs light when the laser oscillation power is low, and under the action of strong laser, the absorption coefficient is reduced to saturation along with the increase of light intensity, and the semiconductor saturated absorption mirror has the characteristic of transparency to light, so that the reduction of loss and the output of the laser are realized.
(2) The invention can realize two-stage pumping by introducing an intermediate medium under the condition that the emission wavelength of the pumping source is not matched with the absorption spectrum of the gain medium, thereby enlarging the application range of the wavelength of the pumping source; at the same time, cascaded pumping also has the advantage that the thermal load in the gain medium can be reduced. The pump light during the second time of pumping is closer to emission laser wavelength, has reduced the quantum loss of laser in-process, and then has effectively reduced the heat load, and more effective thermal management that carries on improves life.
(3) The polarization synthesis lens synthesizes the vertical polarization fundamental frequency light and the horizontal polarization fundamental frequency light which oscillate in the cavity, and simultaneously performs double-end pumping on the laser crystal, thereby shortening the length of the laser resonant cavity and improving the optical power density of the fundamental frequency light in the resonant cavity. Meanwhile, the thermal compensation negative lens is adopted to compensate the thermal lens effect of the laser crystal, so that the output power and stability of the laser are further improved, and the stable operation of the short-wavelength green laser with high efficiency and high output power is realized.
(4) The invention provides higher output power and shorter pulse, and has simple structure and more convenient use. On the other hand, the pump light can be bound in the cavity, so that the pump light is reflected back and forth in the cavity and is fully absorbed after passing through the gain medium for many times, and the uniformity of pump absorption can be improved while the absorption is ensured.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
A high power green laser thin-film, comprising: the optical fiber green laser unit comprises: the device comprises a green laser, a gain fiber, a first polarization laser gain system, a second polarization laser gain system, a polarization synthesis lens, a wavelength division multiplexing coupler and a reflector.
The fiber green laser unit includes: energy is injected into an optical fiber circuit through a wavelength division multiplexing coupler, a gain optical fiber is used as an excitation medium of the green laser, input laser can generate gain of exciting light in the gain optical fiber, and a reflecting mirror in a reflecting mirror and a semiconductor saturated absorption mirror form an optical cavity, so that the laser is subjected to mode selection and multiple reflection to provide a resonant cavity for the green laser.
In a preferred embodiment of the present invention, the polarization combining lens is configured to combine the oscillation light excited by the first polarization laser gain system and the oscillation light excited by the second polarization laser gain system into a laser beam. The first polarization laser gain system comprises a first excitation device, a second excitation device and a first laser crystal. The second polarization laser gain system comprises a third excitation device, a fourth excitation device and a second laser crystal. The polarization direction of the oscillation light excited by the first laser crystal is vertical; the polarization direction of the oscillation light excited by the second laser crystal is horizontal.
In a preferred embodiment of the present invention, the green laser further comprises a Q-switch and a green output mirror disposed on the optical path of the synthesized polarized light; the green laser further includes: the frequency doubling crystal is arranged on a reflection light path of the green light output mirror, and the plane mirror is arranged on one side of the frequency doubling crystal far away from the green light output mirror. The polarization synthesis lens is used for synthesizing the oscillation light excited by the first polarization laser gain system and the oscillation light excited by the second polarization laser gain system into a laser beam. The normal direction of the polarization synthesizing lens and the direction of the synthesized light path form a Brewster angle.
In a preferred embodiment of the present invention, the semiconductor saturable absorber is a semiconductor saturable absorber mirror, and the semiconductor saturable absorber mirror absorbing medium can generate absorption saturation on the laser light to generate high-energy pulses. The fiber laser is passively Q-switched to realize the periodic change of the loss in the cavity of the fiber laser, thereby realizing the pulse high-power output of the laser. The semiconductor saturated absorption mirror has the property of saturated absorption at the resonant wavelength, namely, the semiconductor saturated absorption mirror absorbs light when the laser oscillation power is low, and under the action of strong laser, the absorption coefficient is reduced to saturation along with the increase of light intensity, and the semiconductor saturated absorption mirror has the characteristic of transparency to light, so that the reduction of loss and the output of the laser are realized.
In a preferred embodiment of the invention, the gain fiber is doped with rare earth elements, and the rare earth elements are one or more of yttrium and thulium; under the condition that the emission wavelength of the pumping source is not matched with the absorption spectrum of the gain medium, two-stage pumping is realized by introducing an intermediate medium, and the use range of the wavelength of the pumping source is enlarged; at the same time, cascaded pumping also has the advantage that the thermal load in the gain medium can be reduced. The pump light during the second time of pumping is closer to emission laser wavelength, has reduced the quantum loss of laser in-process, and then has effectively reduced the heat load, and more effective thermal management that carries on improves life.
In a preferred embodiment of the present invention, the polarization combining lens combines the vertical polarization fundamental frequency light and the horizontal polarization fundamental frequency light oscillated in the cavity, and simultaneously performs double-end pumping on the laser crystal, thereby shortening the length of the laser resonant cavity and improving the optical power density of the fundamental frequency light in the resonant cavity. Meanwhile, the thermal compensation negative lens is adopted to compensate the thermal lens effect of the laser crystal, so that the output power and stability of the laser are further improved, and the stable operation of the short-wavelength green laser with high efficiency and high output power is realized.
In a preferred embodiment of the present invention, the power supply circuit provides higher output power and shorter pulse, and has a simple structure and is more convenient to use. On the other hand, the pump light can be bound in the cavity, so that the pump light is reflected back and forth in the cavity and is fully absorbed after passing through the gain medium for many times, and the uniformity of pump absorption can be improved while the absorption is ensured.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A high power green laser thin-film, comprising: a fiber green laser unit and a semiconductor saturable absorber, characterized in that,
the optical fiber green laser unit includes: the device comprises a green laser, a gain fiber, a first polarization laser gain system, a second polarization laser gain system, a polarization synthesis lens, a wavelength division multiplexing coupler and a reflector;
the optical fiber green laser unit includes: energy is injected into an optical fiber circuit through a wavelength division multiplexing coupler, the gain optical fiber is used as an excitation medium of the green laser, input laser can generate gain of exciting light in the gain optical fiber, and the reflecting mirror in the semiconductor saturated absorption mirror form an optical cavity, so that the laser is subjected to mode selection and multiple reflection to provide a resonant cavity for the green laser;
the semiconductor saturable absorber is a semiconductor saturable absorber mirror, and the semiconductor saturable absorber mirror absorbing medium can generate absorption saturation on laser to generate high-energy pulses.
2. The high power green laser chip as claimed in claim 1, wherein: the polarization synthesis lens is used for synthesizing the oscillation light excited by the first polarization laser gain system and the oscillation light excited by the second polarization laser gain system into a laser beam.
3. The high power green laser chip as claimed in claim 1, wherein: the first polarization laser gain system comprises a first excitation device, a second excitation device and a first laser crystal.
4. A high power green sheet laser as claimed in claim 3, wherein: the second polarization laser gain system comprises a third excitation device, a fourth excitation device and a second laser crystal.
5. The high power green laser chip as claimed in claim 4, wherein: the polarization direction of the oscillation light excited by the first laser crystal is vertical; the polarization direction of the oscillation light excited by the second laser crystal is in the horizontal direction.
6. The high power green laser chip as claimed in claim 1, wherein: the gain optical fiber is doped with rare earth element, and the rare earth element is one or more of yttrium and thulium.
7. The high power green laser chip as claimed in claim 1, wherein: the green laser also comprises a Q switch and a green light output mirror which are arranged on the optical path of the synthesized polarized light.
8. The high power green laser chip as claimed in claim 1, wherein: the green laser further includes: the frequency doubling crystal is arranged on a reflection light path of the green light output mirror, and the plane mirror is arranged on one side of the frequency doubling crystal, which is far away from the green light output mirror.
9. The high power green laser chip as claimed in claim 1, wherein: the polarization synthesis lens is used for synthesizing the oscillation light excited by the first polarization laser gain system and the oscillation light excited by the second polarization laser gain system into a laser beam.
10. The high power green laser chip as claimed in claim 9, wherein: the normal direction of the polarization synthesis lens and the direction of the synthesized light path form a Brewster angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110893977.0A CN113594838A (en) | 2021-08-05 | 2021-08-05 | High-power green light thin-film laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110893977.0A CN113594838A (en) | 2021-08-05 | 2021-08-05 | High-power green light thin-film laser |
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| Publication Number | Publication Date |
|---|---|
| CN113594838A true CN113594838A (en) | 2021-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110893977.0A Withdrawn CN113594838A (en) | 2021-08-05 | 2021-08-05 | High-power green light thin-film laser |
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| CN (1) | CN113594838A (en) |
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2021
- 2021-08-05 CN CN202110893977.0A patent/CN113594838A/en not_active Withdrawn
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Application publication date: 20211102 |
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