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CN112234428B - Three-wavelength double-end comprehensive pumping Cr-Er YSGG acousto-optic Q-switched laser and absorption rate enhancement method - Google Patents

Three-wavelength double-end comprehensive pumping Cr-Er YSGG acousto-optic Q-switched laser and absorption rate enhancement method Download PDF

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Publication number
CN112234428B
CN112234428B CN202011252807.6A CN202011252807A CN112234428B CN 112234428 B CN112234428 B CN 112234428B CN 202011252807 A CN202011252807 A CN 202011252807A CN 112234428 B CN112234428 B CN 112234428B
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semiconductor laser
ysgg
laser
acousto
optic
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CN112234428A (en
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李永亮
杨亚帅
王驰
张英明
吴起通
张晗
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Changchun University of Science and Technology
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Changchun University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/117—Q-switching using intracavity acousto-optic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0912—Electronics or drivers for the pump source, i.e. details of drivers or circuitry specific for laser pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094069—Multi-mode pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Lasers (AREA)

Abstract

The invention relates to the technical field of lasers, in particular to a three-wavelength double-end comprehensive pumping Cr: er YSGG acousto-optic Q-switching laser and an absorption rate enhancement method, comprising a first dichroic mirror, a reflecting mirror, a composite crystal, a second dichroic mirror, an acousto-optic Q-switching switch and an output mirror, wherein the reflecting mirror, the second dichroic mirror and the output mirror form a resonant cavity; a first semiconductor laser is arranged above the first dichroic mirror, and a second semiconductor laser and a third semiconductor laser are respectively arranged at two ends of the resonant cavity; the pumping light generated by the first semiconductor laser and the second semiconductor laser is focused on the composite crystal through the first dichroic mirror and the reflecting mirror, the pumping light generated by the third semiconductor laser is focused on the composite crystal through the second dichroic mirror, the output laser generates pulse laser through the acousto-optic Q-switching switch, and the pulse laser is output through the output mirror. The three-wavelength double-end comprehensive pumping Cr: er: YSGG acousto-optic Q-switched laser and the absorption rate enhancement method provided by the invention solve the problem of low conversion efficiency of the existing laser.

Description

Three-wavelength double-end comprehensive pumping Cr-Er YSGG acousto-optic Q-switched laser and absorption rate enhancement method
Technical Field
The invention relates to the field of lasers, in particular to a three-wavelength double-end comprehensive pumping Cr: er: YSGG acousto-optic Q-switched laser and an absorption rate enhancement method.
Background
The mid-infrared laser with the wavelength of 2.7-3 mu m has important application in the fields of medicine, atmospheric remote sensing, nonlinear optics, military and the like. Er 3+ emits laser light in this band during the 4I11/2 energy level to 4I13/2 energy level radiative transition. Currently, crystal matrixes suitable for Er 3+ doping are YAG, GSGG, YSGG and GYSGG, wherein the YSGG crystal doped with Er 3+ has the advantages of lower pumping threshold value, higher output power and the like compared with the other three crystals. But the thermal conductivity of the YSGG crystal is relatively low, only half of that of the YAG crystal, resulting in significant thermal effects during operation of the Er 3+ -doped YSGG crystal laser.
The existing pulse laser has the technical problems that: the conversion efficiency is low, the beam quality is poor, and the absorption effect of the working substance on the pump light is poor.
Disclosure of Invention
The invention provides a three-wavelength double-end comprehensive pumping Cr: er: YSGG acousto-optic Q-switched laser and an absorption rate enhancement method, which solve the problems of low conversion efficiency, poor beam quality and poor absorption effect of working substances on pumping light of the existing laser.
The technical scheme for solving the problems is as follows: the three-wavelength double-end comprehensive pumping Cr is Er, YSGG acousto-optic Q-switching laser, and is characterized by comprising a first dichroic mirror, a reflecting mirror, a composite crystal, a second dichroic mirror, an acousto-optic Q-switching switch and an output mirror which are sequentially arranged along the optical path direction of the laser, wherein the reflecting mirror, the second dichroic mirror and the output mirror form a resonant cavity;
a first semiconductor laser is arranged above the first dichroic mirror, and a second semiconductor laser and a third semiconductor laser are respectively arranged at two ends of the resonant cavity;
The pumping light generated by the first semiconductor laser and the second semiconductor laser is focused on the composite crystal through the first dichroic mirror and the reflecting mirror, the pumping light generated by the third semiconductor laser is focused on the composite crystal through the second dichroic mirror, the output laser generates pulse laser through the acousto-optic Q-switch, and the pulse laser is output through the output mirror.
Further is: one end of the first semiconductor laser, one end of the second semiconductor laser and one end of the second semiconductor laser are respectively connected with the first coupling lens group, the second coupling lens group and the third coupling lens group through corresponding conducting optical fibers, and the first coupling lens group and the second coupling lens group are mutually vertically arranged.
Further is: the first semiconductor laser is a 970nm semiconductor laser, the second semiconductor laser is a 450nm semiconductor laser, and the third semiconductor laser is a 654nm semiconductor laser.
Further is: the output power of the 450nm semiconductor laser is tuned between 1W and 15W, the output power of the 654nm semiconductor laser is tuned between 1mW and 2W, and the output power of the 970nm semiconductor laser is tuned between 1W and 15W.
Further is: the composite crystal is a Cr: er: YSGG crystal, two ends of the Cr: er: YSGG crystal are bonded with YSGG to form the composite crystal, two end faces of the Cr: er: YSGG composite crystal are plated with high-permeability films with wave bands of 450nm, 654nm, 970nm and 2.79 mu m, and the Cr: er: YSGG composite crystal is wrapped by indium foil and is arranged in a copper block.
Further is: the doping concentration of Er 3+ and Cr 3+ in the Er YSGG composite crystal is 30at percent and 3at percent respectively, the size is 3mm multiplied by 12mm, the doping part Cr is Er YSGG, the size is 3mm multiplied by 8mm, and the undoped YSGG size is 3mm multiplied by 2mm.
Further is: the two sides of the first dichroic mirror are plated with a high-transmittance film with the wavelength of 450nm and 45 degrees, and the right side is plated with a high-reflectance film with the wavelength of 970nm and 45 degrees; the second dichroic mirror was coated with a 654nm 45-degree high-transmittance film on both sides and a 2.79 μm 45-degree high-reflectance film on the left side.
Further is: the two sides of the reflecting mirror 9 are plated with 450/970nm antireflection film, the right side is plated with 2.79 mu m high-reflectivity film, the output mirror 12 is a low-transmissivity output mirror with 2.79 mu m wave band, and the transmissivity of the output mirror is 5%.
Further is: the acousto-optic medium of the acousto-optic Q-switch is TeO 2 acousto-optic crystal.
A method for increasing the light absorption of a composite crystal comprising the steps of:
And adjusting output power and power proportion of the first semiconductor laser, the second semiconductor laser and the third semiconductor laser in the pulse laser according to a preset proportion.
Compared with the prior art, the invention has the beneficial effects that:
1) The invention can improve the conversion efficiency and the beam quality, and lead the composite crystal to absorb the pump light optimally.
2) Compared with 790nm semiconductor laser pumping Er, YSGG, the invention avoids the energy consumed by the non-radiative transition of Er 3+ on 4I9/2 energy level to the energy level 4I11/2 on laser and the generated heat, and can effectively reduce the influence of the heat effect on the laser operation.
3) Compared with 970nm semiconductor laser pumping Er, YSGG, the invention adopts three-wavelength pumping, increases the absorption of laser working substance to pumping light, can obtain higher gain, and further improves the conversion efficiency.
4) Compared with the Er: YSGG of the flash lamp pump, only part of the spectrum of the flash lamp is in the absorption band of the gain medium, so that the conversion efficiency of the laser system is greatly reduced, useless heat entering the laser gain medium is greatly increased, and the heat effect is increased.
5) The semiconductor lasers with the three wavelengths of 450nm, 654nm and 970nm are used as pumping sources for comprehensive pumping, and the output power of the semiconductor lasers with the three wavelengths can be tuned, so that the power proportion of the semiconductor lasers with the three wavelengths can be adjusted, and the laser working substance can achieve optimal absorption for the three wavelengths.
Drawings
FIG. 1 is a schematic structural diagram of embodiment 1 of the present invention;
FIG. 2 is a graph of energy transfer between Cr 3+ and Er 3+ in a Cr: er: YSGG crystal.
In the figure, a 1-first semiconductor laser, a 2-second semiconductor laser, a 3-third semiconductor laser, a 4-first coupling lens group, a 5-second coupling lens group, a 6-third coupling lens group, a 7-first dichroic mirror, an 8-second dichroic mirror, a 9-reflecting mirror, a 10-composite crystal, an 11-acousto-optic Q-switch and a 12-output mirror are arranged.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention.
Example 1: as shown in FIG. 1, the three-wavelength double-end integrated pump Cr is Er, YSGG acousto-optic Q-switched laser comprises a first dichroic mirror 7, a reflecting mirror 9, a composite crystal 10, a second dichroic mirror 8, an acousto-optic Q-switched switch 11 and an output mirror 12 which are sequentially arranged along the optical path direction of the laser, wherein the reflecting mirror 9, the second dichroic mirror 8 and the output mirror 12 form a resonant cavity;
a first semiconductor laser 1 is placed above the first dichroic mirror 7, and a second semiconductor laser 2 and a third semiconductor laser 3 are placed at both ends of the resonant cavity, respectively.
As shown in fig. 2, the activator Er 3+ absorbs energy at 970nm to directly transition to energy level 4I11/2, The sensitization factor Cr 3+ absorbs energy at 450nm and 654nm and excites from the ground state 4A2 to 4T1 and 4T2 energy levels, And transfer energy to the activator Er 3+ laser energy level 4I9/2 or 4I11/2, then a fast non-radiative transition to 4I11/2, the last 4I11/2 transition to energy level 4I13/2 produces a 2.79 μm laser. The invention combines the characteristic absorption peaks of a sensitization factor Cr 3+ and an activation factor Er 3+ in a Cr:YSGG crystal on the basis of 970nm semiconductor laser pumping Er:YSGG and a flash lamp pumping Cr:Er:YSGG, adopts three wavelengths of 450nm, 654nm and 970nm semiconductor laser double-end comprehensive pumping Cr:Er:YSGG composite crystal, The effective absorption of the Er: YSGG composite crystal to the pump light is increased by adjusting the output power and the power proportion of the three-wavelength semiconductor laser, and the defects of low conversion efficiency and serious thermal effect caused by that the spectrum of the flash lamp part is in the absorption band of the gain medium are avoided. the thermal effect of the YSGG crystal laser doped with Er 3+ is improved, and the output power, the conversion efficiency and the beam quality are further improved.
As a preferred embodiment of the present invention: one ends of the first semiconductor laser 1, the second semiconductor laser 2 and the third semiconductor laser 3 are respectively connected with the first coupling lens group 4, the second coupling lens group 5 and the third coupling lens group 6 through respective corresponding conductive optical fibers, and the first coupling lens group 4 and the second coupling lens group 5 are mutually vertically placed. The diameter of the conducting fiber was 200 μm and the numerical aperture was 0.22.
As a preferred embodiment of the present invention: the first semiconductor laser 1 is a 970nm semiconductor laser, the second semiconductor laser 2 is a 450nm semiconductor laser, and the third semiconductor laser is a 3654nm semiconductor laser.
In the prior art, 790nm/970nm semiconductor laser pumping Er is YSGG, and flash lamp pumping Cr is Er is YSGG. The 790nm semiconductor laser is adopted to pump Er, YSGG has low pumping efficiency and generates a large amount of heat in the non-radiative transition process; the 970nm semiconductor laser is adopted to pump Er, YSGG has limited absorption of the crystal to the 970nm wavelength laser, which leads to difficult further improvement of conversion efficiency and output power; the flash lamp pumping Cr is Er, YSGG is only in the absorption band of the gain medium, so that the conversion efficiency of the laser system is greatly reduced, useless heat entering the laser gain medium is greatly increased, and the heat effect is increased. The invention adopts three wavelengths of semiconductor lasers of 450nm, 654nm and 970nm to pump Cr: er: YSGG comprehensively based on the characteristic absorption peaks of the sensitization factors Cr 3+ and the activation factors Er 3+, and the output power of the three wavelengths of semiconductor lasers can be tuned, so that the power proportion of the three wavelengths of semiconductor lasers can be adjusted, and the laser working substance can absorb the three wavelengths optimally.
As a preferred embodiment of the present invention: the output power of 970nm semiconductor laser is tuned between 1W and 15W, the output power of 654nm semiconductor laser is tuned between 1mW and 2W, the output power of 450nm semiconductor laser is tuned between 1W and 15W, and the optimal absorption of composite crystal quality is achieved by adjusting the ratio of 970nm semiconductor laser, 654nm semiconductor laser and 450nm semiconductor laser power, the light-light conversion efficiency is improved, and the pulse width is narrowed.
As a preferred embodiment of the present invention: the composite crystal 10 is a Cr: er: YSGG composite crystal, which is formed by bonding YSGG at two ends of the Cr: er: YSGG crystal, bonding undoped YSGG crystal at two ends of the crystal, plating high-permeability films with wave bands of 450nm, 654nm, 970nm and 2.79 mu m on two end surfaces of the Cr: er: YSGG composite crystal, wrapping the Cr: er: YSGG composite crystal by indium foil, and installing the Cr: YSGG composite crystal in a copper block.
As a preferred embodiment of the present invention: the doping concentration of Er 3+ and Cr 3+ in the Er YSGG composite crystal is 30at percent and 3at percent respectively, the size is 3mm multiplied by 12mm, the doping part Cr is Er YSGG, the size is 3mm multiplied by 8mm, and the undoped YSGG size is 3mm multiplied by 2mm.
As a preferred embodiment of the present invention: the two sides of the first dichroic mirror 8 are plated with a high transmittance film of 450nm45 degrees, and the right side is plated with a high reflectance film of 970nm45 degrees; the second dichroic mirror 9 was coated with a 654nm 45-degree high transmittance film on both sides and a 2.79 μm 45-degree high reflectance film on the left side.
As a preferred embodiment of the present invention: the mirror 9 is coated with an antireflection film of 450/970nm on both sides, and a high-reflectivity film of 2.79 μm on the right side, and the output mirror 12 has a low-transmissivity output mirror of 2.79 μm band and a transmissivity of 5%.
As a preferred embodiment of the present invention: the acousto-optic medium of the acousto-optic Q-switch 11 is TeO 2 acousto-optic crystal.
Working principle: the pump light generated by the first semiconductor laser 1 and the second semiconductor laser 2 is respectively output to the first coupling lens group 4 and the second coupling lens group 5 through conducting optical fibers, then the pump light is pumped to the composite crystal 19 after being combined through the first dichroic mirror 7, the pump light generated by the third semiconductor laser 3 is output to the third coupling lens group 6 through the conducting optical fibers, then the pump light is focused on the composite crystal 19 through the second dichroic mirror 8, the output laser generates pulse laser through the acousto-optic Q-switching switch 11, and the pulse laser is output through the output mirror 12.
Example 2: a method for increasing the light absorption of a composite crystal comprising the steps of:
The output powers and power ratios of the first semiconductor laser 1, the second semiconductor laser 2, and the third semiconductor laser 3 in the pulse laser are adjusted according to a preset ratio.
Compared with 970nm semiconductor laser pumping, the pumping mode of the invention: only 970nm semiconductor laser was used for pumping, and when the input power was 10W, the maximum output power was 1.27W, and the light-light conversion efficiency was 12.7%. Meanwhile, pulse modulation is carried out by adopting an acousto-optic Q-switch 11, so that 1.076W pulse is obtained, and the pulse width is 61.33ns. The two-end pumping of 450nm, 654nm and 970nm semiconductor lasers is adopted, the input power of 970nm semiconductor lasers is 6W, the input power of 650 nm semiconductor lasers is 2W, the maximum output power is 1.86W, and the light-light conversion efficiency is 18.6%. Meanwhile, an acousto-optic Q switch is adopted for pulse modulation, so that 1.576W pulse is obtained, and the pulse width is 58.42ns. When the total output power of the three-wavelength semiconductor laser is consistent with the output power of the semiconductor laser with 970nm, the output power and the light-light conversion efficiency of the Er-YSGG composite crystal are improved, and the pulse width is narrowed.
The foregoing embodiments of the present invention are not intended to limit the scope of the present invention, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present invention or directly or indirectly applied to other related system fields are included in the scope of the present invention.

Claims (8)

1. The three-wavelength double-end comprehensive pumping Cr is Er, namely a YSGG acousto-optic Q-switched laser, and is characterized by comprising a first dichroic mirror (7), a reflecting mirror (9), a composite crystal (10), a second dichroic mirror (8), an acousto-optic Q-switched switch (11) and an output mirror (12) which are sequentially arranged along the optical path direction of the laser, wherein the reflecting mirror (9), the second dichroic mirror (8) and the output mirror (12) form a resonant cavity;
a first semiconductor laser (1) is arranged above the first dichroic mirror (7), and a second semiconductor laser (2) and a third semiconductor laser (3) are respectively arranged at two ends of the resonant cavity;
Pump light generated by the first semiconductor laser (1) and the second semiconductor laser (2) is focused on the composite crystal (10) through the first dichroic mirror (7) and the reflecting mirror (9), pump light generated by the third semiconductor laser (3) is focused on the composite crystal (10) through the second dichroic mirror (8), and output laser light generates pulse laser light through the acousto-optic Q-switch (11), and the pulse laser light is output through the output mirror (12);
The composite crystal (10) is a Cr: er: YSGG composite crystal, which is formed by bonding YSGG at two ends of the Cr: er: YSGG composite crystal, wherein the two end surfaces of the Cr: er: YSGG composite crystal are plated with high-permeability films with wave bands of 450nm, 654nm, 970nm and 2.79 mu m, and the Cr: er: YSGG composite crystal is wrapped by indium foil and is arranged in a copper block;
The doping concentration of Er 3+ and Cr 3+ in the Er YSGG composite crystal is 30at percent and 3at percent respectively, the size is 3mm multiplied by 12mm, the doping part Cr is Er YSGG, the size is 3mm multiplied by 8mm, and the undoped YSGG size is 3mm multiplied by 2mm.
2. The three-wavelength double-end integrated pumping Cr: er: YSGG acousto-optic Q-switched laser according to claim 1, wherein one end of the first semiconductor laser (1), one end of the second semiconductor laser (2) and one end of the third semiconductor laser (3) are respectively connected with the first coupling lens group (4), the second coupling lens group (5) and the third coupling lens group (6) through corresponding conducting optical fibers, and the first coupling lens group (4) and the second coupling lens group (5) are vertically arranged.
3. The three-wavelength double-ended integrated pumping Cr: er YSGG acousto-optic Q-switched laser according to claim 2, wherein the first semiconductor laser (1) is a 970nm semiconductor laser, the second semiconductor laser (2) is a 450nm semiconductor laser, and the third semiconductor laser (3) is a 654nm semiconductor laser.
4. The three-wavelength double-ended integrated pump Cr: er YSGG acousto-optic Q-switched laser according to claim 3, wherein the output power of said 970nm semiconductor laser is tuned between 1W and 15W, the output power of said 654nm semiconductor laser is tuned between 1mW and 2W, and the output power of said 450nm semiconductor laser is tuned between 1W and 15W.
5. The three-wavelength double-end integrated pumping Cr: er YSGG acousto-optic Q-switched laser is characterized in that the two sides of the first dichroic mirror (7) are plated with a high-transmittance film with the wavelength of 450nm and 45 degrees, and the right side is plated with a high-reflectance film with the wavelength of 970nm and 45 degrees; the second dichroic mirror (8) was coated with a 654nm 45-degree high-transmittance film on both sides and a 2.79 μm 45-degree high-reflectance film on the left side.
6. The three-wavelength double-end integrated pumping Cr: er: YSGG acousto-optic Q-switched laser according to claim 5, wherein the reflecting mirror (9) is coated with a 450/970nm antireflection film on both sides and a 2.79 μm high-reflectivity film on the right side, the output mirror (12) is a low-transmissivity output mirror with a 2.79 μm wave band, and the transmissivity of the output mirror is 5%.
7. The three-wavelength double-end comprehensive pumping Cr: er YSGG acousto-optic Q-switched laser is characterized in that an acousto-optic medium of the acousto-optic Q-switched switch (11) is a TeO 2 acousto-optic crystal.
8. A method for enhancing the light absorptivity of a composite crystal, comprising the steps of:
The output powers and power ratios of the first semiconductor laser (1), the second semiconductor laser (2) and the third semiconductor laser (3) in the pulse laser according to any one of claims 1 to 5 are adjusted according to a preset ratio.
CN202011252807.6A 2020-11-11 2020-11-11 Three-wavelength double-end comprehensive pumping Cr-Er YSGG acousto-optic Q-switched laser and absorption rate enhancement method Active CN112234428B (en)

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