Drawings
Fig. 1 is a perspective view of a heat dissipation assembly of a mobile device.
Fig. 2 is a schematic perspective view of another angle of the heat dissipation assembly of the mobile device of the present disclosure.
Fig. 3 is a schematic cross-sectional perspective view of a heat dissipation assembly of a mobile device according to the present disclosure.
FIG. 4 is a schematic cross-sectional view of a heat dissipation assembly of a mobile device according to the present disclosure.
FIG. 5A is an exploded view of the micro-pump according to the first embodiment of the present invention.
Fig. 5B is another schematic angle exploded view of the first embodiment of the micro-pump of the present disclosure.
FIG. 6A is a schematic cross-sectional view of a first embodiment of the micropump of the present invention.
FIGS. 6B to 6C are schematic views illustrating the operation of the micro-pump according to the first embodiment of the present invention.
FIG. 7A is an exploded view of a second embodiment of the present micropump.
Fig. 7B is another exploded view of the micropump according to the second embodiment of the present invention.
FIG. 8A is a schematic cross-sectional view of a second embodiment of the micropump of the present invention.
FIG. 8B is a schematic view of a second embodiment of the micropump according to the present invention in a derivative implementation manner.
FIGS. 8C to 8E are schematic views illustrating the operation of the second embodiment of the present micro pump.
FIG. 9A is a schematic cross-sectional view of a third embodiment of the micro-pump of the present disclosure.
FIG. 9B is an exploded view of a micro-pump according to a third embodiment of the present disclosure
FIG. 10A to FIG. 10C are schematic views illustrating the operation of the micro-pump according to the third embodiment of the present invention.
Fig. 11 is a perspective view of the liquid pump.
Fig. 12 is a schematic top view of the liquid pump of the present invention.
Fig. 13A is an exploded view of the liquid pump of the present disclosure.
Fig. 13B is another exploded view of the liquid pump of the present disclosure.
FIG. 14 is a cross-sectional view taken along line AA' in FIG. 12.
FIG. 15 is a cross-sectional view taken along line BB' in FIG. 12.
Fig. 16A to 16B are operation diagrams of the liquid pump.
Description of the reference numerals
1: casing body
11: vent hole
12: positioning holder
2: micro pump
21: air injection hole sheet
210: suspension plate
211: hollow hole
212: connecting piece
213: voids
22: cavity frame
23: actuating body
231: piezoelectric carrier plate
2311: piezoelectric pin
232: tuning the resonator plate
233: piezoelectric plate
24: insulating frame
25: conductive frame
251: conductive pin
252: conductive electrode
26: resonance chamber
27: airflow chamber
21A: air inlet plate
211A: air intake
212A: bus bar groove
213A: confluence chamber
22A: resonance sheet
221A: hollow hole
222A: movable part
223A: fixing part
23A: piezoelectric actuator
231A: suspension plate
232A: outer frame
233A: support frame
234A: piezoelectric element
235A: voids
236A: convex part
24A: first insulating sheet
25A: conductive sheet
26A: second insulating sheet
27A: chamber space
21B: first substrate
211B: inflow hole
212B: first surface
213B: second surface
22B: first oxide layer
221B: confluence channel
222B: confluence chamber
23B: second substrate
231B: silicon wafer layer
2311B: actuating part
2312B: outer peripheral portion
2313B: connecting part
2314B: fluid channel
232B: second oxide layer
2321B: vibration chamber
233B: silicon layer
2331B: perforation
2332B: vibrating part
2333B: fixing part
2334B: third surface
2335B: the fourth surface
24B: piezoelectric component
241B: lower electrode layer
242B: piezoelectric layer
243B: insulating layer
244B: upper electrode layer
3: radiating tube plate
4: liquid pump
41: valve cover body
411: first surface of valve cover
412: second surface of valve cover
413: inlet channel
413 a: inlet flange
413 b: first protrusion structure
414: outlet channel
414 a: outlet flange
414 b: outlet chamber
415: clamping piece
42: valve plate
42 a: first valve plate
42 b: second valve plate
421a, 421 b: central valve plate
422a, 422 b: extension support
423a, 423 b: through hole
43: valve base
431: first surface of valve bottom
432: second surface of valve bottom
433: inlet valve passage
433 a: inlet flange
433 b: inlet chamber
434: outlet valve passage
434 a: outlet flange
434 b: second protrusion structure
435: butt joint fastening hole
436: flow-collecting chamber
44: actuator
441: vibrating reed
441 a: electrical connection pin
442: piezoelectric element
45: outer cylinder
451: inner wall concave space
452: central groove
453: penetrate through the frame opening
46: sealing glue
5: heating element
Detailed Description
Some exemplary embodiments that embody the features and advantages of this disclosure will be described in detail in the description that follows. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
Referring to fig. 1 to 4, a heat dissipation assembly for a mobile device is provided, which includes a housing body 1, a micro pump 2, and a heat dissipation tube plate 3; the machine shell body 1 is provided with a vent hole 11 and a positioning containing seat 12, the positioning containing seat 12 is positioned inside the machine shell body 1, is arranged corresponding to the vent hole 11 and is communicated with the vent hole, and the positioning containing seat 12 is communicated with the outside of the machine shell body 1 through the vent hole 11; the micro pump 2 is arranged on the positioning containing seat 12 and corresponds to the vent hole 11, and when the micro pump 2 starts to operate, the transmission gas is discharged from the vent hole 11; the heat radiation tube plate 3 is internally provided with a heat radiation liquid which is positioned in the shell body 1, one end of the heat radiation liquid is positioned in the positioning containing seat 12 and is contacted with a heating element 5 of the action device to carry out heat exchange on a heat source emitted by the heating element 5, the heat radiation liquid flows in the heat radiation tube plate 3 to enable the heat source to be uniformly diffused, and gas guided by the micro pump 2 forms heat convection to carry out heat exchange on heat absorbed by the heat radiation tube plate 3, and finally the gas is discharged from the vent hole 11.
Referring to fig. 5A to 6A, a first embodiment of the micro-pump 2 is a blower micro-pump, comprising: an air injection hole plate 21, a cavity frame 22, an actuating body 23, an insulating frame 24 and a conductive frame 25. The air hole plate 21 is made of a flexible material, and has a suspension plate 210, a hollow hole 211, and a plurality of connecting members 212. The suspension plate 210 is a plate-shaped structure capable of bending and vibrating, but not limited thereto, the shape of the suspension plate 210 may be one of square, circle, ellipse, triangle and polygon. The hollow hole 211 is formed through the center of the floating plate 210 for gas to flow through. In this embodiment, the number of the connecting members 212 is four, and the fumarole pieces 21 are fixedly disposed in the positioning accommodation seat 12 through the connecting members 212. The cavity frame 22 is stacked on the air injection hole piece 21, and the shape thereof corresponds to the air injection hole piece 21, the actuating body 23 is stacked on the cavity frame 22, and a resonance chamber 26 is defined between the actuating body and the cavity frame 22 and between the actuating body and the suspension piece 210. An insulating frame 24 is stacked on the actuating body 23, and has an appearance similar to that of the cavity frame 22. The conductive frame 25 is stacked on the insulating frame 24, and has an appearance similar to that of the insulating frame 24, and the conductive frame 25 has a conductive pin 251 and a conductive electrode 252, the conductive pin 251 extends outward from the outer edge of the conductive frame 25, and the conductive electrode 252 extends inward from the inner edge of the conductive frame 25. In addition, the actuator 23 further includes a piezoelectric carrier 231, an adjusting resonator plate 232 and a piezoelectric plate 233, the piezoelectric carrier 231 is stacked on the cavity frame 22, the adjusting resonator plate 232 is stacked on the piezoelectric carrier 231, the piezoelectric plate 233 is stacked on the adjusting resonator plate 232, the adjusting resonator plate 232 and the piezoelectric plate 233 are housed in the insulating frame 24, and the piezoelectric plate 233 is electrically connected to the conductive electrode 252 of the conductive frame 25, wherein the piezoelectric carrier 231 and the adjusting resonator plate 232 are made of conductive material, the piezoelectric carrier 231 has a piezoelectric pin 2311, the piezoelectric pin 2311 is connected to the conductive pin 251 to form a driving signal (driving frequency and driving voltage), the driving signal is formed by the piezoelectric pin 2311, the piezoelectric carrier 231, the adjusting resonator plate 232, the piezoelectric plate 233, the conductive electrode 252, the conductive frame 25 and the conductive pin 251, the insulating frame 24 isolates the conductive frame 25 from the actuator 23 to prevent short circuit, so that the driving signal is transmitted to the piezoelectric plate 233, and the piezoelectric plate 233 is deformed by the piezoelectric effect after receiving the driving signal (driving frequency and driving voltage) to further drive the piezoelectric carrier plate 231 and adjust the resonator plate 232 to generate reciprocating bending vibration.
As described above, the tuning resonator plate 232 is located between the piezoelectric plate 233 and the piezoelectric carrier plate 231, and serves as a buffer between the two, thereby tuning the vibration frequency of the piezoelectric carrier plate 231. Basically, the thickness of the tuning resonance plate 232 is greater than the thickness of the piezoelectric carrier plate 231, and the thickness of the tuning resonance plate 232 is variable, thereby tuning the vibration frequency of the actuating body 23.
The connectors 212 define a plurality of gaps 213 between the floating plate 210 and the inner edge of the positioning receptacle 12 for gas to flow through. Referring to fig. 6A, the air hole piece 21, the cavity frame 22, the actuator 23, the insulating frame 24 and the conductive frame 25 are correspondingly stacked and disposed on the positioning receptacle 12 in sequence, and an air flow chamber 27 is formed between the air hole piece 21 and a bottom surface (not labeled) of the positioning receptacle 12. The air flow chamber 27 communicates with the resonance chamber 26 between the actuating body 23, the cavity frame 22 and the floating plate 210 through the hollow hole 211 of the air injection hole plate 21. By controlling the vibration frequency of the gas in the resonant cavity 26 to be approximately the same as the vibration frequency of the floating plate 210, the resonant cavity 26 and the floating plate 210 can generate a Helmholtz resonance effect (Helmholtz resonance), so that the gas transmission efficiency is improved.
Referring to fig. 6B and fig. 6C, as shown in fig. 6A, when the piezoelectric plate 233 moves away from the bottom surface of the positioning receptacle 12, the floating plate 210 of the jet hole plate 21 is driven to move away from the bottom surface of the positioning receptacle 12, so that the volume of the air flow chamber 27 expands sharply, the internal pressure thereof decreases to form a negative pressure, and the air outside the micro pump 2 is sucked into the resonance chamber 26 through the plurality of gaps 213 and the hollow hole 211, so that the air pressure in the resonance chamber 26 increases to generate a pressure gradient. As shown in fig. 6C, when the piezoelectric plate 233 drives the floating plate 210 of the air injection hole piece 21 to move toward the bottom surface of the positioning and accommodating seat 12, the air in the resonant cavity 26 flows out rapidly through the hollow hole 211, and the air in the air flow cavity 27 is squeezed, so that the converged air is injected rapidly and in large quantity in an ideal gas state close to bernoulli's law. The evacuated resonant chamber 26 has an internal gas pressure below the equilibrium gas pressure, which leads the gas to re-enter the resonant chamber 26, according to the principle of inertia. Thus, by repeating the operations of fig. 6B and 6C, the piezoelectric plate 233 is controlled to vibrate in a reciprocating manner, and the vibration frequency of the gas in the resonance chamber 26 is controlled to be approximately the same as the vibration frequency of the piezoelectric plate 233, so as to generate the helmholtz resonance effect, thereby realizing high-speed and large-volume gas transmission.
Referring to fig. 7A to 8A, a second embodiment of the micro-pump 2 is a piezoelectric pump, which includes an air inlet plate 21A, a resonator plate 22A, a piezoelectric actuator 23A, a first insulator plate 24A, a conductive plate 25A, and a second insulator plate 26A, wherein the piezoelectric actuator 23A is disposed corresponding to the resonator plate 22A, and the air inlet plate 21A, the resonator plate 22A, the piezoelectric actuator 23A, the first insulator plate 24A, the conductive plate 25A, and the second insulator plate 26A are sequentially stacked.
The intake plate 21A has at least one intake hole 211A, at least one bus bar groove 212A and a converging chamber 213A, and in the embodiment, the number of the intake holes 211A is preferably 4, but not limited thereto. The air inlet hole 211A penetrates through the air inlet plate 21A, and is used for allowing air to flow into the micro pump 2 from the air inlet hole 211A under the action of atmospheric pressure. The air intake plate 21A has at least one bus bar groove 212A, the number and position of which are corresponding to the air intake holes 211A on the other surface of the air intake plate 21A, the number of the air intake holes 211A in this embodiment is 4, and the number of the corresponding bus bar groove 212A is also 4; the converging chamber 213A is located at the center of the air intake plate 21A, one end of the 4 bus slots 212A is connected to the corresponding air intake holes 211A, and the other end is connected to the converging chamber 213A at the center of the air intake plate 21A, so that the air entering the bus slots 212A from the air intake holes 211A can be guided and converged to the converging chamber 213A. In the present embodiment, the air inlet plate 21A has an air inlet hole 211A, a bus groove 212A and a bus chamber 213A formed integrally.
In some embodiments, the air inlet plate 21A may be made of stainless steel, but not limited thereto. In other embodiments, the depth of the bus chamber 213A is the same as the depth of the bus groove 212A, but not limited thereto.
The resonator plate 22A is made of a flexible material, but not limited thereto, and the resonator plate 22A has a hollow hole 221A formed therein and disposed corresponding to the manifold chamber 213A of the inlet plate 21A for the gas to pass therethrough. In other embodiments, the resonator plate 22A may be made of a copper material, but not limited thereto.
The piezoelectric actuator 23A is assembled by a suspension plate 231A, an outer frame 232A, at least one support 233A and a piezoelectric element 234A; the suspension plate 231A is square and can be bent and vibrated, the outer frame 232A is arranged around the suspension plate 231A, at least one bracket 233A is connected between the suspension plate 231A and the outer frame 232A to provide an elastic support effect, the piezoelectric element 234A is also square and attached to one surface of the suspension plate 231A to be deformed along with applied voltage to drive the suspension plate 231A to be bent and vibrated, and the length of the side of the piezoelectric element 234A is less than or equal to that of the side of the suspension plate 231A; a plurality of gaps 235A are formed among the suspension plate 231A, the outer frame 232A and the bracket 233A, and the gaps 235A are used for air to pass through; in addition, the piezoelectric actuator 23A further includes a protrusion 236A, and the protrusion 236A is disposed on the other surface of the suspension plate 231A and disposed on the two surfaces of the suspension plate 231A opposite to the piezoelectric element 234A.
As shown in fig. 8A, the intake plate 21A, the resonator plate 22A, the piezoelectric actuator 23A, the first insulating plate 24A, the conductive plate 25A, and the second insulating plate 26A are sequentially stacked, the thickness of the suspension plate 231A of the piezoelectric actuator 23A is smaller than that of the outer frame 232A, and when the resonator plate 22A is stacked on the piezoelectric actuator 23A, a chamber space 27A is formed between the suspension plate 231A, the outer frame 232A, and the resonator plate 22A of the piezoelectric actuator 23A.
Referring to fig. 8B, the elements of another embodiment of the piezoelectric pump are the same as those of the previous embodiment (fig. 8A), and therefore not described in detail, but the difference is that when the piezoelectric pump is not operated, the suspension plate 231A of the piezoelectric actuator 23A extends away from the resonator plate 22A in a stamping manner, is not at the same level as the outer frame 232A, the extending distance thereof can be adjusted by the bracket 233A, and the bracket 233A and the suspension plate 231A are not parallel to each other, so that the piezoelectric actuator 23A is protruded.
To understand the output actuation manner of the micro pump 2 for providing gas transmission, please refer to fig. 8C to 8E, please refer to fig. 8C first, the piezoelectric element 234A of the piezoelectric actuator 23A is deformed to drive the suspension plate 231A to move upward after being applied with the driving voltage, at this time, the volume of the chamber space 27A is increased to form a negative pressure in the chamber space 27A, so as to draw the gas in the bus chamber 213A into the chamber space 27A, and the resonance plate 22A is synchronously driven upward under the influence of the resonance principle, so as to increase the volume of the bus chamber 213A, and the gas in the bus chamber 213A is also in a negative pressure state due to the relationship that the gas in the bus chamber 213A enters the chamber space 27A, so as to draw the gas into the bus chamber 213A through the gas inlet hole 211A and the bus groove 212A. Referring to fig. 8D, the piezoelectric element 234A drives the suspension plate 231A to move downward, thereby compressing the chamber space 27A, pushing the gas in the chamber space 27A to be delivered upward through the gap 235A, and discharging the gas from the micro pump 2, and meanwhile, the resonator plate 22A resonates with the suspension plate 231A to move downward, so that the gas entering the manifold chamber 213A through the gas inlet hole 211A and the manifold groove 212A enters the chamber space 27A through the hollow hole 221A. Finally, referring to fig. 8E, when the suspension plate 231A returns to the original position, the resonance plate 22A moves upward due to resonance and inertia, and at this time, the resonance plate 22A compresses the gas in the chamber space 27A and moves the gas toward the gap 235A, and the volume in the confluence chamber 213A is raised, so that the gas can continuously converge in the confluence chamber 213A through the gas inlet hole 211A and the bus groove 212A, and by continuously repeating the gas transmission actuation steps provided by the micro pump 2 shown in fig. 8C to 8E, the micro pump 2 can continuously allow the gas to enter the flow channel formed by the gas inlet plate 21A and the resonance plate 22A from the gas inlet hole 211A to generate a pressure gradient, and then the gas is transported upward through the gap 235A, so that the gas flows at a high speed, thereby achieving the effect of gas transmission by the micro pump 2.
Referring to fig. 9A and 9B, the third embodiment of the micro-pump 2 can be a micro-electromechanical pump, which includes a first substrate 21B, a first oxide layer 22B, a second substrate 23B, and a piezoelectric element 24B. The mems pump of the present embodiment is integrally formed by processes such as epitaxy, deposition, photolithography and etching in the semiconductor process, and should not be disassembled, and for the purpose of describing the internal structure thereof, it is described in detail with the exploded view shown in fig. 9B.
The first substrate 21B is a silicon wafer (Si wafer) with a thickness of 150 to 400 μm, the first substrate 21B has a plurality of inflow holes 211B, a first surface 212B and a second surface 213B, in the embodiment, the number of the inflow holes 211B is 4, but not limited thereto, and each of the inflow holes 211B penetrates from the second surface 213B to the first surface 212B, and the inflow holes 211B have a tapered shape from the second surface 213B to the first surface 212B to enhance the inflow effect.
The first oxide layer 22B is a silicon dioxide (SiO)2) The thickness of the thin film is between 10 to 20 micrometers (μm), the first oxide layer 22B is stacked on the first surface 212B of the first substrate 21B, the first oxide layer 22B has a plurality of bus channels 221B and a bus chamber 222B, and the number and the positions of the bus channels 221B and the inflow holes 211B of the first substrate 21B correspond to each other. In this embodiment, the number of the bus channels 221B is also 4, one end of each of the 4 bus channels 221B is respectively connected to the 4 inflow holes 211B of the first substrate 21B, and the other end of each of the 4 bus channels 221B is connected to the bus chamber 222B, so that the gas enters from the inflow holes 211B, passes through the corresponding connected bus channel 221B, and then converges into the bus chamber 222B.
The second substrate 23B is bonded to the first substrate 21B and includes a silicon wafer layer 231B, a second oxide layer 232B, and a silicon material layer 233B. The silicon wafer layer 231B has an actuating portion 2311B, a peripheral portion 2312B, a plurality of connecting portions 2313B, and a plurality of fluid channels 2314B. The actuating portion 2311B is circular, the outer peripheral portion 2312B is hollow and annular, and surrounds the actuating portion 2311B, the connecting portions 2313B are respectively connected between the actuating portion 2311B and the outer peripheral portion 2312B, and the fluid passages 2314B surround the outer periphery of the actuating portion 2311B and are respectively located between the connecting portions 2313B. The second oxide layer 232B is an oxygenThe silicon layer, which has a thickness of 0.5 to 2 micrometers (μm), is formed on the silicon wafer layer 231B, and has a hollow ring shape, and defines a vibration chamber 2321B with the silicon wafer layer 231B. The silicon layer 233B is circular, is located on the second oxide layer 232B and is bonded to the first oxide layer 22B, and the silicon layer 233B is silicon dioxide (SiO)2) The film has a thickness of 2 to 5 micrometers (μm), and has a through hole 2331B, a vibrating portion 2332B, a fixing portion 2333B, a third surface 2334B, and a fourth surface 2335B. The through hole 2331B is formed in the center of the silicon layer 233B, the vibrating portion 2332B is located in the peripheral region of the through hole 2331B and vertically corresponds to the vibration chamber 2321B, the fixing portion 2333B is the peripheral region of the silicon layer 233B and is fixed to the second oxide layer 232B by the fixing portion 2333B, the third surface 2334B is joined to the second oxide layer 232B, and the fourth surface 2335B is joined to the first oxide layer 22B; the piezoelectric element 24B is stacked on the actuation portion 2311B of the silicon wafer layer 231B.
The piezoelectric element 24B includes a lower electrode layer 241B, a piezoelectric layer 242B, an insulating layer 243B and an upper electrode layer 244B, the lower electrode layer 241B is stacked on the actuating portion 2311B of the silicon wafer layer 231B, the piezoelectric layer 242B is stacked on the lower electrode layer 241B, the two are electrically connected through the contact area, furthermore, the width of the piezoelectric layer 242B is smaller than the width of the lower electrode layer 241B, so that the piezoelectric layer 242B cannot completely shield the lower electrode layer 241B, the insulating layer 243B is stacked on a partial area of the piezoelectric layer 242B and an area of the lower electrode layer 241B not shielded by the piezoelectric layer 242B, and finally the upper electrode layer 244B is stacked on the insulating layer 243B and an area of the piezoelectric layer 242B not shielded by the insulating layer 243B, so that the upper electrode layer 244B can be electrically connected with the piezoelectric layer 242B by contacting the piezoelectric layer, and the insulating layer 243B is used to block between the upper electrode layer 244B, avoid the direct contact between the two to cause short circuit.
Referring to fig. 10A to 10C, fig. 10A to 10C are schematic operation diagrams of the mems pump. Referring to fig. 10A, after the lower electrode layer 241B and the upper electrode layer 244B of the piezoelectric element 24B receive the driving voltage and the driving signal and transmit the driving voltage and the driving signal to the piezoelectric layer 242B, the piezoelectric layer 242B begins to deform due to the inverse piezoelectric effect, which drives the actuating portion 2311B of the silicon wafer layer 231B to start to displace, and when the piezoelectric element 24B drives the actuating portion 2311B to move upward to pull away the distance from the second oxide layer 232B, at this time, the volume of the vibration chamber 2321B of the second oxide layer 232B is increased, so that a negative pressure is formed in the vibration chamber 2321B, and the gas in the bus chamber 222B of the first oxide layer 22B is sucked into the through-hole 2331B. As shown in fig. 10B, when the actuator 2311B is pulled by the piezoelectric element 24B to move upward, the vibrating portion 2332B of the silicon material layer 233B moves upward due to the resonance principle, and when the vibrating portion 2332B moves upward, the space of the vibration chamber 2321B is compressed and the gas in the vibration chamber 2321B is pushed to move toward the fluid channel 2314B of the silicon wafer layer 231B, so that the gas can be discharged upward through the fluid channel 2314B, and while the vibrating portion 2332B moves upward to compress the vibration chamber 2321B, the volume of the bus chamber 222B is increased due to the displacement of the vibrating portion 2332B, and a negative pressure is formed inside thereof, so as to suck the gas outside the micro-electromechanical pump into the micro-electromechanical pump from the inflow hole 211B. Finally, as shown in fig. 10C, when the piezoelectric element 24B drives the actuating portion 2311B of the silicon wafer layer 231B to move downward, the gas in the vibration chamber 2321B is pushed toward the fluid channel 2314B and exhausted, and the vibration portion 2332B of the silicon material layer 233B is driven by the actuating portion 2311B to move downward, so as to synchronously compress the gas in the confluent chamber 222B and move it toward the vibration chamber 2321B through the through hole 2331B, and then when the piezoelectric element 24B drives the actuating portion 2311B to move upward, the volume of the vibration chamber 2321B is greatly increased, so that the gas is sucked into the vibration chamber 2321B with high suction force, and the above operations are repeated, so that the actuating portion 2311B is continuously driven by the piezoelectric element 24B to move up and down and the vibrating portion 2332B is driven to move up and down, thereby changing the internal pressure of the micro pump and enabling the micro pump to continuously suck and exhaust gas, thereby completing the operation of the microelectromechanical pump.
As shown in fig. 4, the heat dissipation assembly of the mobile device further includes a liquid pump 4, the liquid pump 4 is connected to the heat dissipation tube plate 3 and is communicated with the interior of the heat dissipation tube plate 3, and the liquid pump 4 can pump and drive the heat dissipation liquid to flow circularly after being actuated, so as to accelerate the flow speed of the heat dissipation liquid, rapidly diffuse the heat source on the heat dissipation tube plate 3, and accelerate the heat exchange effect of the heat dissipation tube plate 3.
Referring to fig. 11 to 13B, the liquid pump 4 includes a valve cover 41, two sets of valve plates 42, a valve base 43, an actuator 44 and an outer cylinder 45. Wherein an actuator 44, a valve base 43, two sets of valve plates 42, and a valve cover 41 are sequentially disposed in the outer cylinder 45, and the inner portion of the outer cylinder 45 is sealed by a sealant 46.
Referring to fig. 11, 13A, 13B and 15, the valve cap body 41 has a first surface 411, a second surface 412, an inlet passage 413, an outlet passage 414 and a plurality of locking members 415, wherein the inlet passage 413 and the outlet passage 414 respectively penetrate between the first surface 411 and the second surface 412, the inlet passage 413 is provided with an inlet flange 413A protruding from an outer edge of the second surface 412, a first protrusion 413B protruding from the inlet flange 413A is provided on the outer edge of the second surface 412, the outlet passage 414 is provided with an outlet flange 414a protruding from an outer edge of the second surface 412, an outlet chamber 414B is recessed from a center of the outlet flange 414a, and the locking members 415 protrude from the second surface 412. In the present embodiment, the number of the locking elements 415 is 2, but not limited thereto, and the number can be set according to the actual positioning requirement.
The two sets of valve plates 42 are made of Polyimide (PI) polymer material, and the manufacturing method thereof mainly utilizes a reactive ion gas dry etching (RIE) method to coat a photosensitive photoresist on the valve plate 42 structure, and after exposing and developing the valve plate 42 structure pattern, etching is performed, since the Polyimide (PI) plate is protected from etching by the photoresist covering part, the valve plate 42 can be etched, the two sets of valve plates 42 comprise a first valve plate 42a and a second valve plate 42b, the first valve plate 42a and the second valve plate 42b are respectively provided with a central valve plate a and 421b, a plurality of extension supports 422a and 422b are respectively arranged around the central valve plates 421a and 421b for elastic support, and a through hole 423a, and a through hole 422b are respectively formed between the adjacent extension supports 422a and 422b, 423 b.
The valve base 43 is abutted with the valve cover body 41, and the first valve plate 42a and the second valve plate 42b are positioned therebetween, the valve base 43 has a valve bottom first surface 431, a valve bottom second surface 432, an inlet valve channel 433 and an outlet valve channel 434, wherein the inlet valve channel 433 and the outlet valve channel 434 are arranged between the valve bottom first surface 431 and the valve bottom second surface 432 in a penetrating manner, and the inlet valve channel 433 is provided with an inlet recessed edge 433a recessed at the inner edge of the valve bottom first surface 431 for abutting against the inlet flange 413a of the valve cover body 41, and the first valve plate 42a is arranged therebetween, so that the central valve plate 421a is abutted against the first protruding structure 413b of the valve cover body 41 to close the inlet channel 413 of the valve cover body 41, the central valve plate 421a of the first valve plate 42a is normally abutted against the first protruding structure 413b, to generate a preload force and facilitate the preload to prevent reverse flow (as shown in fig. 15), an inlet chamber 433b is recessed in the center of the inlet recess edge 433a, and the outlet valve passage 434 is recessed with an outlet recess edge 434a on the inner edge of the valve bottom first surface 431, and a second protrusion structure 434b is protruded in the center of the outlet recess edge 434a, and the outlet recess edge 434a is abutted against the outlet flange 414a of the valve cover body 41, and the second valve piece 42b is disposed therebetween, so that the central valve piece 421b is abutted by the second protrusion structure 434b to close the outlet valve passage 434 of the valve base 43, and the central valve piece 421b of the second valve piece 42b is normally abutted against the second protrusion structure 434b to generate a preload force and facilitate the preload to prevent reverse flow (as shown in fig. 15), and the valve bottom first surface 431 is also provided with the same number of abutting engagement holes 435 corresponding to the plurality of engagement pieces 415 of the valve cover body 41, as shown in fig. 14, the plurality of locking elements 415 of the valve cover body 41 are correspondingly locked into the plurality of abutting locking holes 435 of the valve cover body 41, so that the valve base 43 and the valve cover body 41 can abut and cover the first valve piece 42a and the second valve piece 42b, and realize positioning and assembly, in this embodiment, the number of the locking elements 415 is 2, so the number of the abutting locking holes 435 is 2, but not limited thereto, and can be set according to the number of actual positioning requirements. Also, the valve base second surface 432 is recessed to form a manifold chamber 436, and the manifold chamber 436 communicates with the inlet valve passage 433 and the outlet valve passage 434.
The actuator 44 includes a vibration plate 441 and a piezoelectric element 442, wherein the vibration plate 441 is made of metal, the piezoelectric element 442 is made of piezoelectric powder of lead zirconate titanate (PZT) series with high piezoelectric number, the piezoelectric element 442 is attached to one side of the vibration plate 441, the vibration plate 441 covers the valve bottom second surface 432 of the valve base 43 to seal the current collecting chamber 436, and the vibration plate 441 has an electrical pin 441a for electrically connecting to an external power source so that the piezoelectric element 442 can be driven to deform and vibrate and displace.
The outer cylinder 45 has an inner wall concave space 451 on one side, and the bottom of the inner wall concave space 451 has a hollow central groove 452 and a penetrating frame 453 penetrating one side of the outer cylinder 45 and communicating with the outside, wherein the inner wall concave space 451 is sequentially inserted by the actuator 44, the valve base 43, the two sets of valve plates 42 and the valve cover 41, and the electrical pin 441a of the actuator 44 is penetrated and positioned in the penetrating frame 453. The sealing compound 46 is positioned in the inner wall concave space 451, and the piezoelectric element 442 of the actuator 44 is correspondingly disposed in the central groove 452 and is driven to vibrate and displace in the central groove 452.
As shown in fig. 16A, when the piezoelectric element 442 is driven by voltage to vibrate and displace downward, the inlet chamber 433B of the valve base 43 forms suction to pull the central valve plate 421a of the first valve plate 42a to displace, at this time, the central valve plate 421a of the first valve plate 42a does not close the inlet channel 413 of the valve cover 41, so that the liquid is introduced from the inlet channel 413 of the valve cover 41 into the inlet chamber 433B of the valve base 43 through the through hole 423a of the first valve plate 42a and flows into the collecting chamber 436 to buffer the concentrated liquid, and thereafter, as shown in fig. 16B, when the piezoelectric element 442 of the actuator 44 vibrates and displaces upward, the liquid buffered in the collecting chamber 436 pushes toward the outlet valve channel 434 of the valve base 43, so that the central valve plate 421B of the second valve plate 42B is separated from the top of the second protruding structure 434B, the fluid is smoothly flowed into the outlet chamber 414b of the valve cover 41 through the through hole 423b of the second valve plate 42b and then flowed out of the outlet passage 414, thereby achieving the liquid transfer.
In summary, the heat dissipation assembly for a mobile device provided by the present disclosure utilizes a heat dissipation tube plate having a heat dissipation liquid therein to dissipate heat of a heating element (such as a processing chip) of the mobile device, utilizes a liquid pump to accelerate the flow of the heat dissipation liquid, so that heat energy can be rapidly and evenly dispersed throughout the heat dissipation tube plate to accelerate the dissipation effect, and then utilizes a micro pump to deliver gas to the heat dissipation tube plate to perform heat exchange, thereby reducing the temperature of the heat dissipation tube plate, greatly improving the heat dissipation effect, and effectively reducing the overheating problem of the processor of the mobile device.