CN112436086A - Semiconductor refrigeration module - Google Patents
Semiconductor refrigeration module Download PDFInfo
- Publication number
- CN112436086A CN112436086A CN202011282460.XA CN202011282460A CN112436086A CN 112436086 A CN112436086 A CN 112436086A CN 202011282460 A CN202011282460 A CN 202011282460A CN 112436086 A CN112436086 A CN 112436086A
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- Prior art keywords
- conductive copper
- layer
- blocking
- semiconductor
- copper block
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000005057 refrigeration Methods 0.000 title claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 119
- 229910052802 copper Inorganic materials 0.000 claims abstract description 119
- 239000010949 copper Substances 0.000 claims abstract description 119
- 230000000903 blocking effect Effects 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000005476 soldering Methods 0.000 claims abstract description 56
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000002245 particle Substances 0.000 claims abstract description 39
- 239000000919 ceramic Substances 0.000 claims abstract description 33
- 238000000926 separation method Methods 0.000 claims description 18
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims 6
- 238000001816 cooling Methods 0.000 claims 5
- 235000012431 wafers Nutrition 0.000 claims 3
- 238000005516 engineering process Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a semiconductor refrigeration module which comprises two ceramic plates, wherein a semiconductor particle layer is arranged between the two ceramic plates, an upper substrate conductive copper block layer and a lower substrate conductive copper block layer are respectively arranged between the semiconductor particle layer and the two ceramic plates, the upper substrate conductive copper block layer and the lower substrate conductive copper block layer comprise a plurality of conductive copper blocks, an upper substrate soldering tin blocking layer used for limiting soldering tin to flow is arranged between the upper substrate conductive copper block layer and the semiconductor particle layer, and a lower substrate soldering tin blocking layer used for limiting soldering tin to flow is arranged between the lower substrate conductive copper block layer and the semiconductor particle layer. The two soldering tin blocking layers respectively comprise a plurality of blocking lines, the blocking lines are arranged in a staggered mode to form a blocking net, the conductive copper blocks are wrapped through the blocking net, the blocking lines can also be a plurality of separating lines located in gaps among the conductive copper blocks, the conductive copper blocks are separated through the cross separating lines, and therefore soldering tin cannot flow down the conductive copper sheets to cause short circuit when the soldering tin is assembled.
Description
Technical Field
The invention relates to the technical field of semiconductor refrigeration, in particular to a high-current semiconductor refrigeration module.
Background
In the development process of human social life, industrialization process and science and technology, refrigeration and temperature control technology is always through, and must continue to be widely researched, used and developed. In the field, besides the well-known temperature control technology which uses electric power to drive machinery to do work and uses a refrigerant as a heat transfer working medium to perform heat exchange, the technology uses a semiconductor module or a module as a physical expression form, has the advantages of simple structure, convenient use, small and variable module volume, no noise, no pollution, low energy consumption, strong expandability, convenient maintenance, recoverability, wide use range and the like, plays an important role in various fields of communication, 5G, laser conduction, electronic and electrical equipment, AI, medical treatment, biology and the like, and has the problem of product scrap caused by short circuit due to solder flowing during welding, but the existing semiconductor refrigeration module has no corresponding counter measures.
For example, chinese patent CN110345663A, published 2019, 10, 18, a thermoelectric semiconductor refrigerator and a thermoelectric refrigerator module, which belong to the field of semiconductor refrigeration technology, the thermoelectric semiconductor refrigerator includes a first substrate and a second substrate facing each other in parallel, the first substrate has a first plane facing the second substrate, the second substrate has a second plane facing the first substrate, a plurality of thermocouples are disposed between the first substrate and the second substrate, the thermocouples communicate the first plane and the second plane to form a functional region having a current path, and a non-functional region is further formed on the first substrate and/or the second substrate. The first substrate and the second substrate are provided with the non-functional areas which can not form a current path, so that the packaging thermal stress borne by the thermoelectric semiconductor refrigerator is reduced, and the reliability of the thermoelectric semiconductor refrigerator in the use process is effectively improved. The problem that products are scrapped due to short circuit caused by flowing of soldering tin when the semiconductor refrigeration module is assembled and welded is not considered.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the technical problem that products are scrapped due to short circuit caused by flowing of soldering tin during assembly and welding exists in the conventional semiconductor refrigeration module. A semiconductor refrigeration module capable of restricting the flow of solder during assembly soldering is provided.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: the utility model provides a semiconductor refrigeration module, includes two potsherds, be equipped with the semiconductor grained layer between two potsherds, the semiconductor grained layer with be equipped with upper substrate conductive copper block layer and infrabasal plate conductive copper block layer between two potsherds respectively, upper substrate conductive copper block layer with infrabasal plate conductive copper block layer includes a plurality of conductive copper block, upper substrate conductive copper block layer with be equipped with the upper substrate soldering tin that is used for restricting soldering tin flow between the semiconductor grained layer and block the layer, infrabasal plate conductive copper block layer with be equipped with the infrabasal plate soldering tin that is used for restricting soldering tin flow between the semiconductor grained layer and block the layer. A semiconductor refrigeration module comprises two ceramic plates and a semiconductor particle layer positioned between the two ceramic plates, wherein an upper substrate conductive copper block layer is arranged above the semiconductor particle layer, a lower substrate conductive copper block layer is arranged below the semiconductor particle layer, the two conductive copper block layers respectively comprise a plurality of conductive copper blocks, a soldering tin blocking layer for limiting the flowing of soldering tin is respectively arranged between the two conductive copper block layers and the semiconductor particle layer, the two soldering tin blocking layers respectively comprise a plurality of blocking lines, the blocking lines are mutually staggered to form a blocking net, the blocking net is respectively positioned at one side of the two conductive copper block layers close to the semiconductor particle layer and comprises a plurality of net holes, each net hole corresponds to one conductive copper block, and the area of the mesh hole of the blocking net is smaller than that of the conductive copper block, so that the soldering tin can be wrapped by the blocking net when the semiconductor particles are assembled with the soldering tin of the conductive copper sheet, and the soldering tin cannot flow down the conductive copper sheet to cause short circuit.
Preferably, the upper substrate solder blocking layer and the lower substrate solder blocking layer each include a plurality of blocking lines, and the blocking lines are located on the sides of the plurality of conductive copper blocks close to the semiconductor particle layer. Two soldering tin blocking layers comprise a plurality of blocking lines, the blocking lines are located on one side, close to the semiconductor particle layer, of the conductive copper block layer, the blocking lines are fixed on the surface of the conductive copper block, and the flowing of the soldering tin can be limited through the blocking lines when the conductive copper block and the semiconductor particle are assembled.
Preferably, the blocking lines are arranged in a staggered manner to form a blocking net for limiting the flowing of soldering tin on the conductive copper blocks, the blocking net comprises a plurality of net holes corresponding to the conductive copper blocks, and the area of each net hole is smaller than that of the corresponding conductive copper block. The blocking lines are arranged in a staggered mode to form a blocking net, the blocking net covers the conductive copper block layer, each net hole of the blocking net corresponds to one conductive copper block, and therefore soldering tin on the conductive copper blocks can be contained in the net holes to limit flowing of the soldering tin, and the conductive copper blocks are prevented from being conducted with each other to cause short circuit.
Preferably, the upper substrate solder blocking layer and the lower substrate solder blocking layer each include a plurality of blocking lines, and the blocking lines are located at gaps between the plurality of conductive copper blocks. The soldering tin blocking layer comprises a plurality of blocking lines, and the blocking lines are located in gaps between the conductive copper blocks, so that the blocking lines are convenient to install and position, and the situation that the blocking lines are fixed at staggered positions is not easy to occur.
Preferably, the blocking line comprises a plurality of crisscross separation lines. The cross-shaped separation lines are arranged at the cross-shaped gap openings of the gaps among the conductive copper blocks, so that the separation lines are convenient to arrange, the end parts of the separation lines are in contact, and the separation lines can surround the conductive copper blocks after being fixed.
Preferably, the height of the blocking line is higher than that of the conductive copper block. The height of the blocking line, namely the separation line, is higher than that of the conductive copper blocks, so that the blocking line, namely the separation line, is higher than the conductive copper blocks after the blocking line, namely the separation line, surrounds the conductive copper blocks at the gaps among the conductive copper blocks, the conductive copper blocks are surrounded by the blocking line, namely the separation line, and short circuit caused by the fact that soldering tin on the conductive copper blocks spills out during welding is prevented.
Preferably, the semiconductor particle layer comprises at least two columns of semiconductor particles arranged in parallel capable of forming a double or multiple current path. The semiconductor refrigeration module is characterized in that a current path of the semiconductor refrigeration module is double-stranded or multi-stranded, a semiconductor particle layer comprises at least two rows of semiconductor particles which are arranged in parallel to form at least two parallel circuits, and thus the semiconductor refrigeration module can play a role in shunting when a large-current power supply is connected.
Preferably, the lower substrate conductive copper block layer is provided with two external connection pieces for connecting with the positive electrode and the negative electrode of an external power supply, and the two external connection pieces are positioned on the same side of the lower substrate conductive copper block layer. The conductive copper block layer of infrabasal plate is equipped with two outer splicing that are used for being connected with external power supply positive negative pole, and two outer splices are located the same one side of the conductive copper block layer of infrabasal plate makes things convenient for external power cord to be connected with outer splicing.
Preferably, the two ceramic sheets comprise an upper substrate ceramic sheet and a lower substrate ceramic sheet, and one side of the lower substrate ceramic sheet extends outwards to form an extension part for supporting the outer contact piece. One side of the lower substrate ceramic wafer extends outwards to form an extension part, the extension part supports the outer connecting sheet and can protect the outer connecting sheet at the same time, the outer connecting sheet is prevented from being bent and damaged, and the extension part of the lower substrate ceramic wafer and the outer connecting sheet on the extension part protrude out of the upper substrate ceramic wafer, so that the semiconductor refrigeration module is conveniently connected with an external power supply.
The substantial effects of the invention are as follows: be equipped with a soldering tin that is used for restricting soldering tin mobile between two conductive copper block layers and semiconductor grained layer respectively and block the layer, two soldering tin block the layer and all include a plurality of broken lines, block the line and form the net of blocking alternately each other, wrap conductive copper block through blocking the net, block the line and also can be a plurality of parting lines that lie in the clearance between the conductive copper block, separate conductive copper block through crisscross parting line, soldering tin just can not flow down conductive copper sheet and lead to the short circuit when semiconductor grain and conductive copper sheet soldering tin equipment like this.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a second embodiment of the present invention.
Fig. 3 is a schematic external structural diagram according to a first embodiment of the present invention.
Wherein: 1. the upper substrate ceramic wafer, 2, upper substrate soldering tin block layer, 3, upper substrate conductive copper block layer, 4, semiconductor granular layer, 5, lower base plate soldering tin block layer, 6, lower base plate conductive copper block layer, 7, lower base plate ceramic wafer, 8, external connecting piece, 9, parting line.
Detailed Description
The following provides a more detailed description of the present invention, with reference to the accompanying drawings.
The first embodiment is as follows:
a semiconductor refrigeration module, as shown in figure 1, comprises two ceramic plates, a semiconductor particle layer 4 is arranged between the two ceramic plates, and the semiconductor particle layer 4 comprises at least two rows of semiconductor particles which are arranged in parallel and can form a double-strand or multi-strand current path. That is, the current path of the semiconductor refrigeration module is double-stranded or multi-stranded, the semiconductor particle layer 4 comprises at least two rows of semiconductor particles arranged in parallel to form at least two parallel circuits, so that the semiconductor refrigeration module can play a role in shunting when a large-current power supply is connected. An upper substrate conductive copper block layer 3 and a lower substrate conductive copper block layer 6 are respectively arranged between the semiconductor particle layer 4 and the two ceramic sheets, the lower substrate conductive copper block layer 6 is provided with two outer contact pieces 8 used for being connected with the anode and the cathode of an external power supply, and the two outer contact pieces 8 are positioned on the same side of the lower substrate conductive copper block layer 6. The conductive copper block layer 6 of infrabasal plate is equipped with two outer splicing 8 that are used for being connected with external power supply positive negative pole, and two outer splicing 8 lie in the conductive copper block layer 6 of infrabasal plate and make things convenient for external power line to be connected with outer splicing 8 with one side. The two ceramic plates comprise an upper substrate ceramic plate 1 and a lower substrate ceramic plate 7, and one side of the lower substrate ceramic plate 7 extends outwards to form an extension part for supporting an outer contact piece 8. One side of the lower substrate ceramic plate 7 extends outwards to form an extension part, the extension part supports the outer connecting piece 8 and can protect the outer connecting piece 8 at the same time, the outer connecting piece 8 is prevented from being bent and damaged, and the extension part of the lower substrate ceramic plate 7 and the outer connecting piece 8 on the extension part protrude out of the upper substrate ceramic plate 1, so that the connection between the semiconductor refrigeration module and an external power supply is facilitated.
Conductive copper bulk layer 3 of upper substrate and conductive copper bulk layer 6 of infrabasal plate include a plurality of conductive copper block, are equipped with between conductive copper bulk layer 3 of upper substrate and the semiconductor grained layer 4 to be used for restricting the mobile upper substrate soldering tin of soldering tin and block layer 2, are equipped with between conductive copper bulk layer 6 of infrabasal plate and the semiconductor grained layer 4 to be used for restricting the mobile infrabasal plate soldering tin of soldering tin and block layer 5. The upper substrate soldering tin blocking layer 2 and the lower substrate soldering tin blocking layer 5 both comprise a plurality of blocking lines, and the blocking lines are positioned on one sides of a plurality of conductive copper blocks close to the semiconductor particle layer 4. Two soldering tin blocking layers comprise a plurality of blocking lines, the blocking lines are located on one side, close to the semiconductor particle layer 4, of the conductive copper block layer, the blocking lines are fixed on the surface of the conductive copper block, and the flowing of the soldering tin can be limited through the blocking lines when the conductive copper block and the semiconductor particle are assembled. The blocking lines are arranged in a staggered mode to form a blocking net used for limiting flowing of soldering tin on the conductive copper blocks, the blocking net comprises a plurality of net holes corresponding to the conductive copper blocks, and the area of each net hole is smaller than that of the corresponding conductive copper block. The blocking lines are arranged in a staggered mode to form a blocking net, the blocking net covers the conductive copper block layer, each net hole of the blocking net corresponds to one conductive copper block, and therefore soldering tin on the conductive copper blocks can be contained in the net holes to limit flowing of the soldering tin, and the conductive copper blocks are prevented from being conducted with each other to cause short circuit.
In the embodiment, two ceramic plates and a semiconductor particle layer 4 positioned between the two ceramic plates, an upper substrate conductive copper block layer 3 is arranged above the semiconductor particle layer 4, a lower substrate conductive copper block layer 6 is arranged below the semiconductor particle layer 4, the two conductive copper block layers both comprise a plurality of conductive copper blocks, a soldering tin blocking layer for limiting the flowing of soldering tin is respectively arranged between the two conductive copper block layers and the semiconductor particle layer 4, the two soldering tin blocking layers respectively comprise a plurality of blocking lines, the blocking lines are mutually staggered to form a blocking net, the blocking net is respectively positioned at one side of the two conductive copper block layers close to the semiconductor particle layer 4 and comprises a plurality of net holes, each net hole corresponds to one conductive copper block, and the area of the mesh hole of the blocking net is smaller than that of the conductive copper block, so that the soldering tin can be wrapped by the blocking net when the semiconductor particles are assembled with the soldering tin of the conductive copper sheet, and the soldering tin cannot flow down the conductive copper sheet to cause short circuit.
Example two:
the difference between the first embodiment and the second embodiment is that the upper substrate solder blocking layer 2 and the lower substrate solder blocking layer 5 each include a plurality of blocking lines, and the blocking lines are located at the gaps between the plurality of conductive copper blocks. As shown in fig. 2, the solder blocking layer includes a plurality of blocking lines, and the blocking lines are located in the gaps between the conductive copper blocks, so that the blocking lines can be conveniently installed and positioned, and the situation that the blocking lines are fixed at different positions is not easy to occur. The blocking line comprises a plurality of crisscross separation lines 9. The cross-shaped separation lines 9 are arranged at the cross-shaped gap openings of the gaps among the conductive copper blocks, so that the separation lines 9 are convenient to arrange, the end parts of the separation lines 9 are in contact, and the separation lines 9 can be surrounded by the conductive copper blocks after being fixed. The height of the breaking line is higher than that of the conductive copper block. The height of the blocking line, namely the separation line 9 is higher than that of the conductive copper blocks, so that after the blocking line, namely the separation line 9 surrounds the conductive copper blocks at the gaps among the conductive copper blocks, the blocking line, namely the separation line 9 is higher than the conductive copper blocks so as to surround the conductive copper blocks, and short circuit caused by the fact that soldering tin on the conductive copper blocks spills out during welding is prevented.
The above examples only show some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (9)
1. The utility model provides a semiconductor refrigeration module, its characterized in that includes two ceramic wafers, be equipped with semiconductor particle layer (4) between two ceramic wafers, semiconductor particle layer (4) with be equipped with conductive copper block layer of upper substrate (3) and lower base plate (6) between two ceramic wafers respectively, the conductive copper block layer of upper substrate (3) with the conductive copper block layer of lower base plate (6) include a plurality of conductive copper block, the conductive copper block layer of upper substrate (3) with be equipped with between semiconductor particle layer (4) and be used for restricting the mobile upper substrate soldering tin of soldering tin and block layer (2), the conductive copper block layer of lower base plate (6) with be equipped with between semiconductor particle layer (4) and be used for restricting the mobile lower base plate soldering tin of soldering tin and block layer (5).
2. A semiconductor cooling module according to claim 1, characterized in that the upper substrate solder barrier layer (2) and the lower substrate solder barrier layer (5) each comprise a number of barrier lines on the side of the number of conductive copper blocks adjacent to the layer of semiconductor particles (4).
3. The semiconductor refrigeration module as claimed in claim 2, wherein the blocking lines are staggered to form a blocking net for limiting solder flowing on the conductive copper blocks, the blocking net comprises a plurality of net holes corresponding to the conductive copper blocks, and the area of each net hole is smaller than that of the corresponding conductive copper block.
4. A semiconductor cooling module according to claim 1, characterized in that the upper substrate solder barrier layer (2) and the lower substrate solder barrier layer (5) each comprise a number of barrier lines, which are located at the gaps between the number of conductive copper blocks.
5. A semiconductor cooling module according to claim 4, characterized in that the blocking line comprises several cross-shaped separation lines (9).
6. A semiconductor cooling module according to claim 4 or 5, wherein the height of the blocking line is higher than the height of the conductive copper block.
7. A semiconductor cooling module according to claim 1, characterized in that the layer (4) of semiconductor particles comprises at least two columns of semiconductor particles arranged in parallel, which can form a double or multiple current path.
8. A semiconductor refrigeration module according to claim 1, characterized in that the lower substrate conductive copper block layer (6) is provided with two external tabs (8) for connection to the positive and negative poles of an external power supply, the two external tabs (8) being located on the same side of the lower substrate conductive copper block layer (6).
9. A semiconductor refrigeration module according to claim 8, characterized in that the two ceramic plates comprise an upper base ceramic plate (1) and a lower base ceramic plate (7), one side of the lower base ceramic plate (7) extending outwards forming an extension for supporting the outer tab (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011282460.XA CN112436086A (en) | 2020-11-17 | 2020-11-17 | Semiconductor refrigeration module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011282460.XA CN112436086A (en) | 2020-11-17 | 2020-11-17 | Semiconductor refrigeration module |
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| CN112436086A true CN112436086A (en) | 2021-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011282460.XA Pending CN112436086A (en) | 2020-11-17 | 2020-11-17 | Semiconductor refrigeration module |
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| CN (1) | CN112436086A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112240649A (en) * | 2020-10-10 | 2021-01-19 | 蔚县中天电子股份合作公司 | Thermoelectric refrigeration assembly |
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| WO2015010586A1 (en) * | 2013-07-23 | 2015-01-29 | 西安永电电气有限责任公司 | Grooved solder mask igbt module substrate |
| CN105321916A (en) * | 2015-10-16 | 2016-02-10 | 杭州大和热磁电子有限公司 | Semiconductor module with special structure |
| CN111403584A (en) * | 2019-12-23 | 2020-07-10 | 杭州大和热磁电子有限公司 | Thermoelectric module suitable for non-airtight packaging and manufacturing method thereof |
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2020
- 2020-11-17 CN CN202011282460.XA patent/CN112436086A/en active Pending
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|---|---|---|---|---|
| US5416046A (en) * | 1994-01-18 | 1995-05-16 | Wang; Ping-Lung | Method for making semiconductor heat-cooling device having a supporting mesh |
| CN1819161A (en) * | 2005-02-03 | 2006-08-16 | 富士电机电子设备技术株式会社 | Semiconductor device and manufacturing method thereof |
| US20060180191A1 (en) * | 2005-02-15 | 2006-08-17 | Yamaha Corporation | Thermoelectric module and manufacturing method for same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112240649A (en) * | 2020-10-10 | 2021-01-19 | 蔚县中天电子股份合作公司 | Thermoelectric refrigeration assembly |
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Application publication date: 20210302 |