CN215220705U - Immersion liquid cooling type IGBT module - Google Patents
Immersion liquid cooling type IGBT module Download PDFInfo
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- CN215220705U CN215220705U CN202120861520.7U CN202120861520U CN215220705U CN 215220705 U CN215220705 U CN 215220705U CN 202120861520 U CN202120861520 U CN 202120861520U CN 215220705 U CN215220705 U CN 215220705U
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- igbt
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- 239000007788 liquid Substances 0.000 title claims abstract description 26
- 238000007654 immersion Methods 0.000 title claims abstract description 16
- 238000001816 cooling Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 239000003507 refrigerant Substances 0.000 claims abstract description 16
- 239000002826 coolant Substances 0.000 claims abstract description 9
- 239000000110 cooling liquid Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000003921 oil Substances 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 7
- 230000008676 import Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to an immersion liquid cooling formula IGBT module, include insulating casing and the main circuit unit that is located insulating casing, the main circuit unit includes IGBT chip, freewheel diode chip and metal substrate, IGBT chip and freewheel diode chip are by the centre gripping welding between two metal substrates, are equipped with the electrode stitch of wearing out insulating casing on every metal substrate to insulating casing is worn out to the grid stitch of IGBT chip, last refrigerant import and the refrigerant export of being equipped with of insulating casing, it has insulating coolant liquid, the whole main circuit unit of this insulating coolant liquid submergence to fill at insulating casing intussuseption. Compared with the prior art, the utility model has the advantages of the radiating efficiency is high, compact structure, occupation space are little.
Description
Technical Field
The utility model relates to a IGBT module field of making especially relates to an submergence liquid cooling formula IGBT module.
Background
The chip of a high-power IGBT (insulated gate bipolar transistor) module in the current market is mainly packaged in a traditional stacked packaging mode, so that the size of the IGBT module is generally large. Meanwhile, the main heat dissipation mode of the IGBT module is two technologies of forced air cooling and cold plate type liquid cooling heat dissipation. The air cooling mainly comprises forced convection heat transfer of a fan and cooling fins, the mode is poor in heat dissipation efficiency, unstable in temperature control, greatly affected by space environment and temperature, large in occupied space and high in space requirement, and enough ventilation area is required. The cold plate type liquid cooling is that a cold plate is tightly attached to a radiating substrate of the IGBT module, a heat conducting interface material is coated in the middle to reduce thermal resistance, but several layers of thermal resistance are still isolated between cooling liquid and a chip, so that the flow of the cooling liquid needs to be increased to achieve ideal radiating capacity, the power consumption of a system is large, and the cost is high.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an immersion liquid cooling type IGBT module in order to overcome the defects that the heat dissipation efficiency is poor, the occupied size is large, the thermal resistance between refrigerant and chip is large, the refrigerant flow is large and the like existing in the prior art.
The purpose of the utility model can be realized through the following technical scheme:
the utility model provides an immersion liquid cooling formula IGBT module, includes insulating casing and the main circuit unit that is located insulating casing, the main circuit unit includes IGBT chip, freewheel diode chip and metal substrate, IGBT chip and freewheel diode chip are by the centre gripping welding between two metal substrates, are equipped with the electrode stitch that wears out insulating casing on every metal substrate to the insulating casing is worn out to the grid stitch of IGBT chip, be equipped with refrigerant import and refrigerant export on the insulating casing, it has insulating coolant liquid to fill in the insulating casing, this whole main circuit unit of insulating coolant liquid immersion.
Further, a reinforced heat exchange layer is arranged on the metal substrate and is positioned on the opposite side of the side where the metal substrate and the IGBT chip are welded.
Further, the reinforced heat exchange layer is one or a combination of a surface etching reinforced heat exchange layer, a metal fin reinforced heat exchange layer or a metal powder sintering reinforced heat exchange layer.
Further, the metal substrate comprises a first substrate, a second substrate, a third substrate and a fourth substrate, the ends of the second substrate and the third substrate are connected through a vertical plate, the first substrate and the second substrate clamp one group of IGBT chips and freewheeling diode chips, and the second substrate clamps the other group of IGBT chips and freewheeling diode chips to enable the IGBT chips to be connected in series.
Furthermore, the electrode pins and the grid pins penetrate out of two sides of the insulating shell, and the refrigerant inlet and the refrigerant outlet are respectively located at the top and the bottom of the insulating shell.
Furthermore, the outer layers of the electrodes of the IGBT chip and the freewheeling diode chip are covered with a titanium metal layer, a silver metal layer or a nickel metal layer.
Further, the metal substrate is a silver metal plate, a copper metal plate, an aluminum metal plate or a gold metal plate.
Further, the electrode pins and the grid pins are welded or sintered on the insulating housing.
Further, the insulating shell is a plastic shell, a ceramic shell or a glass shell.
Further, the insulating cooling liquid is electronic fluorinated liquid, insulating silicone oil or transformer oil.
Compared with the prior art, the utility model discloses following beneficial effect has:
1. the utility model discloses a structure of full immersive, chip and metal substrate all direct contact insulating coolant for the heat dissipation compares with traditional structure and does not have the thermal resistance basically between coolant liquid and the chip, is showing and is improving the radiating efficiency.
2. The utility model discloses a metal substrate directly carries out the encapsulation and the fixing of chip, can effectively reduce the volume of IGBT module, accomplishes that the chip is arranged compacter, realizes that modular is light, thin, short, little.
3. The reinforced heat exchange layer is arranged on the metal substrate, so that boiling phase change heat exchange can be realized, the heat transfer efficiency is higher, the flow of a refrigerant can be reduced, the energy loss of a system is reduced, and energy conservation and emission reduction are realized.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of the main circuit unit.
Fig. 3 is a schematic sectional view of the present invention.
Reference numerals: 1. the semiconductor device comprises an insulating shell, 11, a refrigerant inlet, 12, a refrigerant outlet, 2, a main circuit unit, 21, IGBT chips, 22, flywheel diode chips, 23, a metal substrate, 23a, a first substrate, 23b, a second substrate, 23c, a third substrate, 23d, a fourth substrate, 24, electrode pins, 25, grid pins, 26 and a reinforced heat exchange layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. The embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
As shown in fig. 1, the present embodiment provides an immersion liquid-cooled IGBT module including an insulating case 1 and a main circuit unit 2, the main circuit unit 2 being installed in the insulating case 1. The top end and the low end of the insulating shell 1 are respectively provided with a refrigerant inlet 11 and a refrigerant outlet 12, the main circuit unit 2 is immersed by insulating cooling liquid filled inside, and the heat of the main circuit unit 2 is directly dissipated through the flow of the insulating cooling liquid. The insulating cooling liquid can be electronic fluorinated liquid, insulating silicone oil or transformer oil, etc., preferably electronic fluorinated liquid. The insulating housing 1 may be a plastic housing, a ceramic housing or a glass housing, preferably a ceramic housing.
As shown in fig. 2 and 3, the main circuit unit 2 includes an IGBT chip 21, a freewheel diode chip 22, and a metal substrate 23, the IGBT chip 21, and the freewheel diode chip 22. The IGBT chip 21 is clamped and welded between two metal substrates 23, and each metal substrate 23 is provided with an electrode pin 24 penetrating through the insulating shell 1. In this embodiment, two IGBT chips 21 and two freewheeling diode chips 22 are specifically included. The metal substrate 23 includes a first substrate 23a, a second substrate 23b, a third substrate 23c, and a fourth substrate 23d, ends of the second substrate 23b and the third substrate 23c are connected by a vertical plate to form a right-angled zigzag shape, and then one set of the IGBT chip 21 and the freewheel diode chip 22 is sandwiched between the first substrate 23a and the second substrate 23b, and the other set of the IGBT chip 21 and the freewheel diode chip 22 is sandwiched between the third substrate 23c and the fourth substrate 23 d. Meanwhile, two IGBT chips 21 are disposed in the same direction so as to be connected in series with each other, and diode chips are connected in parallel with one IGBT chip 21, respectively. Each IGBT chip 21 is provided with a gate pin 25 for controlling the chip, and the gate pin 25 penetrates out of the housing to control the on and off of the IGBT chip 21. Avoidance holes are provided in the metal substrate 23 for passing through the gate pins 25 to avoid contact and interference therebetween.
The surfaces of the electrodes of the IGBT chip 21 and the freewheeling diode chip 22 are respectively plated with titanium, nickel or silver metal layers for connecting metal lining plates. The metal substrate 23 is a silver metal plate, a copper metal plate, an aluminum metal plate, or a gold metal plate, preferably a copper metal plate. Meanwhile, the area of the metal substrate 23 is 2-20 times of the area of the binding surface of the IGBT chip 21, and the thickness is 2-10 times of the thickness of the IGBT chip 21. In this embodiment, the surface area of the metal substrate 23 is 4 times the surface area of the chip, and the thickness thereof is 6 times the thickness of the chip. And the chips and the metal substrate 23 are welded by adopting solder paste, and the solder paste welding temperature is 220-250 ℃.
The gate pin 25 and the electrode pin 24 respectively penetrate out from two sides of the insulating housing 1. The electrode pins 24 and the grid pins 25 are welded or sintered on the insulating shell 1 to form a sealing structure, so that the cavity of the shell is a closed cavity, and the leakage of cooling liquid is avoided.
In addition, as shown in fig. 2, a reinforced heat exchange layer 26 may be disposed on the surface of the metal substrate 23 corresponding to the surface of the chip to be soldered, and the reinforced heat exchange layer is embodied in the form of one or a combination of several of a metal mesh reinforced heat exchange layer 26, a surface etching reinforced heat exchange layer 26, a metal fin reinforced heat exchange layer 26, or a metal powder sintering reinforced heat exchange layer 26. The structure can realize boiling phase change heat exchange, and has higher heat transfer efficiency, thereby realizing the purposes of reducing the flow of a refrigerant, reducing the energy loss of a system and realizing energy conservation and emission reduction.
The specific manufacturing method of this example is as follows:
in a first step, a metal substrate 23 is prepared to strengthen the heat transfer layer 26.
Secondly, the opposite surface of the metal substrate 23 reinforced heat exchange layer 26 is subjected to screen printing: and printing the solder paste on the surface of the metal substrate 23 according to a set pattern, so as to prepare the printing effect in the early stage for automatic patching.
Step three, automatic surface mounting: the IGBT chip 21 and the free wheel diode chip 22 are mounted on the surface of the metal substrate 23 printed with solder paste.
Fourthly, vacuum reflow soldering: and placing the semi-finished product subjected to the surface mounting in a vacuum furnace, and carrying out reflow soldering.
Fifthly, welding pins of the insulating shell 1: the metal pins are bonded, welded or sintered to the insulating housing 1.
Sixthly, welding the chip electrode and the pin: and welding the chip electrode and the pin by laser.
And seventhly, sealing the insulating shell 1: the concrete embodiment form is bolt seal or welding seal.
The foregoing has described in detail preferred embodiments of the present invention. It should be understood that numerous modifications and variations can be devised by those skilled in the art in light of the teachings of the present invention without undue experimentation. Therefore, the technical solutions that can be obtained by a person skilled in the art through logic analysis, reasoning or limited experiments based on the prior art according to the concepts of the present invention should be within the scope of protection defined by the claims.
Claims (10)
1. The immersed liquid-cooled IGBT module is characterized by comprising an insulating shell (1) and a main circuit unit (2) located in the insulating shell (1), wherein the main circuit unit (2) comprises an IGBT chip (21), a follow current diode chip (22) and metal substrates (23), the IGBT chip (21) and the follow current diode chip (22) are clamped and welded between the two metal substrates (23), an electrode pin (24) penetrating out of the insulating shell (1) is arranged on each metal substrate (23), a grid pin (25) of the IGBT chip (21) penetrates out of the insulating shell (1), a refrigerant inlet (11) and a refrigerant outlet (12) are formed in the insulating shell (1), insulating cooling liquid is filled in the insulating shell (1), and the insulating cooling liquid immerses the whole main circuit unit (2).
2. An immersion liquid cooled IGBT module as claimed in claim 1, characterized in that the metal substrate (23) is provided with a heat transfer enhancement layer (26), the heat transfer enhancement layer (26) being located on the opposite side of the side where the metal substrate (23) and the IGBT chip (21) are soldered.
3. An immersion liquid cooled IGBT module as claimed in claim 2, characterized in that the enhanced heat transfer layer (26) is one or a combination of surface etched enhanced heat transfer layer (26), metal fin enhanced heat transfer layer (26) or metal powder sintered enhanced heat transfer layer (26).
4. An immersion liquid cooled IGBT module as claimed in claim 1, characterized in that the metal substrate (23) comprises a first substrate (23a), a second substrate (23b), a third substrate (23c) and a fourth substrate (23d), ends of the second substrate (23b) and the third substrate (23c) are connected by a vertical plate, the first substrate (23a) and the second substrate (23b) hold one set of IGBT chips (21) and freewheeling diode chips (22), the second substrate (23b) holds the other set of IGBT chips (21) and freewheeling diode chips (22) for series connection between IGBT chips (21).
5. An immersion liquid cooled IGBT module as claimed in claim 1, characterized in that the electrode pins (24) and the gate pins (25) are passed out from both sides of the insulating housing (1), and the coolant inlet (11) and the coolant outlet (12) are located at the top and bottom of the insulating housing (1), respectively.
6. An immersion liquid cooled IGBT module as claimed in claim 1, characterized in that the outer electrode layers of the IGBT chip (21) and the freewheel diode chip (22) are covered with a titanium metal layer, a silver metal layer or a nickel metal layer.
7. An immersion liquid cooled IGBT module as claimed in claim 1, characterized in that the metal substrate (23) is a silver metal plate, a copper metal plate, an aluminum metal plate or a gold metal plate.
8. An immersion liquid cooled IGBT module according to claim 1, characterized in that the electrode pins (24) and the gate pins (25) are welded or sintered on the insulating housing (1).
9. An immersion liquid cooled IGBT module according to claim 1, characterized in that the insulating housing (1) is a plastic housing, a ceramic housing or a glass housing.
10. The immersion liquid cooled IGBT module according to claim 1, where the insulating coolant is an electron fluoride liquid, an insulating silicon oil, or a transformer oil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120861520.7U CN215220705U (en) | 2021-04-25 | 2021-04-25 | Immersion liquid cooling type IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120861520.7U CN215220705U (en) | 2021-04-25 | 2021-04-25 | Immersion liquid cooling type IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215220705U true CN215220705U (en) | 2021-12-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120861520.7U Active CN215220705U (en) | 2021-04-25 | 2021-04-25 | Immersion liquid cooling type IGBT module |
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| Country | Link |
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| CN (1) | CN215220705U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161311A (en) * | 2021-04-25 | 2021-07-23 | 立酷新能源技术(上海)有限公司 | Immersion liquid cooling type IGBT module |
-
2021
- 2021-04-25 CN CN202120861520.7U patent/CN215220705U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161311A (en) * | 2021-04-25 | 2021-07-23 | 立酷新能源技术(上海)有限公司 | Immersion liquid cooling type IGBT module |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230915 Address after: Room 118, building 20, No. 1-42, Lane 83, Hongxiang North Road, Lingang New Area, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Shanghai fenfenfen New Energy Technology Co.,Ltd. Address before: Room 118, building 20, no.1-42, Lane 83, Hongxiang North Road, Pudong New Area, Shanghai, 2013 13 Patentee before: Liku new energy technology (Shanghai) Co.,Ltd. |