CN210805758U - Double-sided hybrid heat dissipation structure of high-power-density IGBT module - Google Patents
Double-sided hybrid heat dissipation structure of high-power-density IGBT module Download PDFInfo
- Publication number
- CN210805758U CN210805758U CN201922105166.0U CN201922105166U CN210805758U CN 210805758 U CN210805758 U CN 210805758U CN 201922105166 U CN201922105166 U CN 201922105166U CN 210805758 U CN210805758 U CN 210805758U
- Authority
- CN
- China
- Prior art keywords
- layer
- insulating substrate
- heat pipe
- solder layer
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a double-sided hybrid heat dissipation structure of a high-power-density IGBT module, which comprises an upper layer heat pipe, a lower layer heat pipe, an upper water cooling plate, a lower water cooling plate and a power module; the upper surface and the lower surface of the power module are respectively connected with the upper layer heat pipe and the lower layer heat pipe, the parts of the upper layer heat pipe and the lower layer heat pipe which are not connected with the power module are mutually connected through a solder layer, the upper surface of the part of the upper layer heat pipe which is mutually connected through the solder layer is connected with the upper water cooling plate, and the lower surface of the part of the lower layer heat pipe which is mutually connected through the solder layer is connected with the lower water cooling plate; the power module comprises an IGBT chip and an FWD chip, and the upper surface and the lower surface of the double-sided hybrid heat dissipation structure are located on the same plane. The utility model discloses two-sided mixed heat radiation structure that heat pipe and water-cooling technique combined together, copper base plate structure covers the projecting pole of IGBT and FWD's positive pole from top to bottom through covering copper base plate connection and can provide one kind than present high power density IGBT module for electric automobile and hybrid electric vehicle's power module.
Description
Technical Field
The utility model relates to a two-sided mixed heat radiation structure of high power density IGBT module belongs to semiconductor technology field and IGBT design technical field.
Background
With the growth of infrastructure activities in developing countries, the demand for high voltage machines is expected to grow, thus driving the market demand for high power IGBTs. Applications of IGBTs in Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV) include their use in powertrains and chargers for delivering and controlling electric power to electric motors. The rapid growth in electric and hybrid vehicle applications is a major driver in the development of high-power IGBT technology. The main criteria for evaluating automotive power modules, such as performance, efficiency, reliability, cost and volume/weight, are generally determined by the power semiconductor device, packaging and manufacturing technology.
Therefore, it is a technical problem to be solved to provide a high power density IGBT module for power modules of electric vehicles and hybrid vehicles, which is more efficient than the advanced cooling technology provided on the present day.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at providing a than present high power density IGBT module for electric automobile and hybrid vehicle's power module.
In order to achieve the technical purpose, the utility model adopts the following technical scheme.
The utility model provides a two-sided mixed heat radiation structure of high power density IGBT module, a serial communication port, include:
the heat pipe cooling system comprises an upper layer heat pipe, a lower layer heat pipe, an upper water cooling plate, a lower water cooling plate and a power module; the upper surface and the lower surface of the power module are respectively connected with the upper layer heat pipe and the lower layer heat pipe, the parts of the upper layer heat pipe and the lower layer heat pipe, which are not connected with the power module, are mutually connected through a solder layer, the upper surface of the part of the upper layer heat pipe, which is mutually connected through the solder layer, is connected with the upper water cooling plate, and the lower surface of the part of the lower layer heat pipe, which is mutually connected through the solder layer, is connected with the lower water cooling plate; the power module comprises an IGBT chip and an FWD chip, and the upper surface and the lower surface of the double-sided hybrid heat dissipation structure are located on the same plane.
Further, the power module is connected with the upper layer heat pipe and the layer heat pipe through a solder layer.
Further, the power module further includes: the copper layer on the first insulating substrate, the copper layer under the first insulating substrate, the second solder layer, the fifth solder layer, the third copper-clad layer and the second insulating substrate; the lower-layer heat pipe, the first insulating substrate, the fourth solder layer, the fourth copper-clad layer and the third solder layer;
the upper surface of the IGBT chip is connected with the lower surface of the lower copper layer of the first insulating substrate through a second solder layer, the upper surface of the FWD chip is connected with the lower surface of the lower copper layer of the first insulating substrate through a third solder layer, the upper surface of the lower copper layer of the first insulating substrate is connected with the lower surface of the first insulating substrate, the upper surface of the first insulating substrate is connected with the lower surface of the upper copper layer of the first insulating substrate, and the upper surface of the upper copper layer of the first insulating substrate is connected with the upper heat pipe through a first solder layer;
the lower surface of the IGBT chip is connected with the upper surface of the upper copper layer of the second insulating substrate through a fourth solder layer, the lower surface of the FWD chip is connected with the upper surface of the upper copper layer of the second insulating substrate through a fifth solder layer, the lower surface of the upper copper layer of the second insulating substrate is connected with the upper surface of the second insulating substrate, the lower surface of the second insulating substrate is connected with the upper surface of the lower copper layer of the second insulating substrate, and the lower surface of the lower copper layer of the second insulating substrate is connected with the upper surface of the lower heat pipe through a sixth solder layer.
Further, a sintered joint portion where the chip and the FWD chip are bonded to the copper surface is formed by the second solder layer, the third solder layer, the fifth solder layer, and the fourth solder layer.
Further, the second solder layer, the third solder layer, the fifth solder layer and the fourth solder layer are sintered by using an Ag-based material or a Cu-based material.
Further, the first insulating substrate and the second insulating substrate are deposited with AlN-Si 3N4 film by reactive sputtering with direct current.
Furthermore, the upper water cooling plate is provided with upper cold water plate pin type water cooling fin columns which are connected with upper cold water plate pin fin bases; the lower water cooling plate is provided with lower cold water plate pin type water cooling fin columns which are all connected with the lower cold water plate pin fin base.
Furthermore, an upper cold water plate water inlet and an upper cold water plate water outlet are respectively arranged at two sides of the upper water cooling plate; and a lower cold water plate water inlet and a lower cold water plate water outlet are respectively arranged at two sides of the lower water cold plate.
The beneficial technical effects are as follows:
the utility model discloses two-sided mixed heat radiation structure that heat pipe and water-cooling technique combined together adopts upper and lower copper-clad base plate structure to connect the projecting pole of IGBT and the positive pole of FWD through copper-clad base plate, reduces the bonding lead wire to realize two-sided heat pipe refrigerated IGBT packaging structure, promote the reliability of module; the optimized solder layer and the formation mode between the chip and the copper-clad substrate of the utility model are helpful to exert the high temperature characteristic of the material, and simultaneously improve the longitudinal heat conduction capability of the heat from the chip to the substrate, thereby reducing the highest temperature of the module and prolonging the service life of the module; the IGBT module with higher power density than that of the prior art can be provided for power modules of electric vehicles and hybrid electric vehicles.
The prior art joining method is welding, but this welding method has serious drawbacks. Its melting temperature and processing temperature are relatively low, and its low-temperature performance under high-temperature condition can result in poor reliability. The utility model adopts the sintering copper bonding with the characteristics of no pressure, high heat conduction and high reliability; the sintering silver bonding needs to adopt a pressurizing process in the sintering process;
the utility model discloses combine heat pipe and water-cooling technique, replace current pure water-cooling technique, be applied to IGBT power module with the heat pipe cooling method. The utility model discloses a two-sided mixed heat radiation structure can realize that the volume is littleer, weight is lighter, coefficient of heat conductivity is higher, non-maintaining cooling unit.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a schematic cross-sectional structure diagram of a power module according to an embodiment of the present invention;
FIG. 3 is a schematic view of a cross-sectional structure of the upper and lower cold water plates and the upper and lower heat pipes according to the embodiment of the present invention;
the labels in the figure are: 1, an upper layer heat pipe; 2: a first solder layer; 3: a copper layer on the first insulating substrate; 4: a first insulating substrate lower copper layer; 5: an FWD chip; 6: a fifth solder layer; 7: a copper layer on the second insulating substrate; 8: a second insulating substrate; 9: a lower layer heat pipe; 10: a first insulating substrate; 11: a second solder layer; 12: an IGBT chip; 13: a fourth solder layer; 14: a lower copper layer of a second insulating substrate; 15: a sixth solder layer; 16: a third solder layer; 17: mounting a cold water plate needle type water-cooling finned column; 18: a water cooling plate is arranged; 19: launching a water cooling plate; 20: an upper cold water plate water inlet; 21: a water outlet of the upper cold water plate; 22: a lower cold water plate water inlet; 23: a water outlet of the lower cold water plate; 24: a seventh solder layer; 25: an eighth solder layer; 26: and a ninth solder layer. 27: an upper cold water plate pin fin base; 28: a lower cold water plate needle type water-cooling finned column; 29: a lower cold water plate pin fin base; 30: and a power module.
Detailed Description
The present invention will be further explained with reference to the drawings and examples. Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present invention, and should not be construed as limiting the present invention.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
In the description of the present invention, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," "connecting," and "connecting" are used in a broad sense, and may be, for example, mechanically or electrically connected, or may be connected internally to two elements, directly or indirectly through an intermediate medium, and the specific meaning of the terms may be understood by those skilled in the art according to specific situations.
These and other aspects of embodiments of the invention will be apparent with reference to the following description and attached drawings. In the description and drawings, particular embodiments of the invention have been disclosed in detail as being indicative of some of the ways in which the principles of the embodiments of the invention may be practiced, but it is understood that the scope of the embodiments of the invention is not limited correspondingly. On the contrary, the embodiments of the invention include all changes, modifications and equivalents coming within the spirit and terms of the claims appended hereto.
FIG. 1 is a schematic structural diagram of an embodiment of the present invention; as shown in fig. 1, the present embodiment provides a double-sided hybrid heat dissipation structure of a high power density IGBT module, including: the heat pipe cooling system comprises an upper layer heat pipe (1), a lower layer heat pipe (9), an upper water cooling plate (18), a lower water cooling plate (19) (the lower water cooling plate (19) is not shown in the figure) and a power module (30); the upper surface and the lower surface of the power module (30) are respectively connected with the upper-layer heat pipe (1) and the lower-layer heat pipe (9), the parts of the upper-layer heat pipe (1) and the lower-layer heat pipe (9) which are not connected with the power module (30) are connected with each other through a solder layer, the upper surface of the part of the upper-layer heat pipe (1) which is connected with each other through the solder layer is connected with the upper water cooling plate (18), and the lower surface of the part of the lower-layer heat pipe (9) which is connected with each other through the solder layer is connected with the lower water cooling plate (19); the power module (30) comprises an IGBT chip (12) and an FWD chip (5), and the upper surface and the lower surface of the double-sided hybrid heat dissipation structure are located on the same plane.
On the basis of the above embodiment, the power module is connected with the upper layer heat pipe (1) and the layer heat pipe (9) through a solder layer.
On the basis of the above embodiments, fig. 2 is a schematic structural diagram of a power module according to an embodiment of the present invention; the power module (30) as shown in fig. 2 further comprises: the copper-clad laminate comprises a first insulating substrate upper copper layer (3), a first insulating substrate (10), a first insulating substrate lower copper layer (4), a second solder layer (11), a fifth solder layer (6), a second insulating substrate upper copper layer (7) and a second insulating substrate (8); a lower layer heat pipe (9), a first insulating substrate (10), a fourth solder layer (13), a second insulating substrate lower copper layer (14) and a third solder layer (16);
the upper surface of the IGBT chip (12) is connected with the lower surface of the lower copper layer (4) of the first insulating substrate through a second solder layer (11), the upper surface of the FWD chip (5) is connected with the lower surface of the lower copper layer (4) of the first insulating substrate through a third solder layer (16), the upper surface of the lower copper layer (4) of the first insulating substrate is connected with the lower surface of the first insulating substrate (10), the upper surface of the first insulating substrate (10) is connected with the lower surface of the upper copper layer (3) of the first insulating substrate, and the upper surface of the upper copper layer (3) of the first insulating substrate is connected with the upper heat pipe (1) through a first solder layer (2);
the lower surface of the IGBT chip (12) is connected with the upper surface of the upper copper layer (7) of the second insulating substrate through a fourth solder layer (13), the lower surface of the FWD chip (5) is connected with the upper surface of the upper copper layer (7) of the second insulating substrate through a fifth solder layer (6), the lower surface of the upper copper layer (7) of the second insulating substrate is connected with the upper surface of the second insulating substrate (8), the lower surface of the second insulating substrate (8) is connected with the upper surface of the lower copper layer (14) of the second insulating substrate, and the lower surface of the lower copper layer (14) of the second insulating substrate is connected with the upper surface of the lower heat pipe (9) through a sixth solder layer (15).
As the utility model discloses a deformation of specific embodiment, between two insulation substrate between last heat pipe and the lower heat pipe, can place a plurality of power modules, power module comprises IGBT chip and FWD chip. IGIGBT chips and FWD chips are staggered, which is beneficial to suppressing thermal coupling. A plurality of heat pipe radiating units can be arranged between the upper water-cooling plate and the lower water-cooling plate according to the heat dissipation thermal power of the chip, and each heat pipe radiating unit comprises an upper heat pipe, a lower heat pipe and a power module arranged between two insulating bases between the upper heat pipe and the lower heat pipe.
In order to significantly improve the thermal conductivity between the mold and the insulating substrate, AlN-DBC (directly bonded Cu), AlN-DBAg (directly bonded Ag) or Si3N4-DBC, Si3N4-DBAg can be adopted in specific implementation. Higher thermal conductivity insulators and DBC or DBAg enable the application of sintered joining techniques or soldering techniques without the need for solder joints.
The utility model discloses a pass through the solder layer with copper layer under the insulating substrate and lower copper layer and connect on the heat pipe surface, got rid of the higher hot fat of thermal resistance between base plate and the fin. Therefore, the reliability of heat conduction and high-temperature operation is greatly improved.
Further, a sintered joint portion where the IGBT chip (12) and the FWD chip (5) are bonded to the copper surface is formed by the second solder layer (11), the third solder layer (16), the fifth solder layer (6), and the fourth solder layer (13).
On the basis of the above embodiment, it is preferable that the second solder layer (11), the third solder layer (16), the fifth solder layer (6), and the fourth solder layer (13) are sintered using an Ag-based material or a Cu-based material.
On the basis of the above embodiment, it is preferable that the first insulating substrate (10) and the second insulating substrate (8) deposit AlN-Si 3N4 films using direct current reactive sputtering. Sputtering of Al-Ni-Ag may also be used as a top electrode formation technique in other embodiments.
FIG. 3 is a schematic view of a connection structure between an upper cold water plate and a lower cold water plate and an upper heat pipe and a lower heat pipe according to an embodiment of the present invention; fig. 3 shows that the parts of the upper layer heat pipe (1) and the lower layer heat pipe (9) which are not connected with the power module (30) are connected with each other through an eighth solder layer (25), the upper surface of the part of the upper layer heat pipe (1) which is connected with each other is connected with the upper water cooling plate (18) through a seventh solder layer (24), and the ninth solder layer (26) of the lower surface of the part of the lower layer heat pipe (9) which is connected with each other is connected with the lower water cooling plate (19); the condenser part (heat dissipation) adopts a small water cooling device, so that the cooling system is quickly changed from gas into liquid, and then the liquid enters the evaporation part (heat dissipation) through the lamp wick. Fig. 3 shows a detailed structure of the condenser portion. As shown in fig. 3, the upper water cooling plate (18) is provided with upper cold water plate pin type water cooling finned columns (17), and the upper cold water plate pin type water cooling finned columns (17) are all connected with upper cold water plate pin fin bases (27); the lower water cooling plate (19) is provided with lower cold water plate pin type water cooling fin columns (28), and the lower cold water plate pin type water cooling fin columns (28) are all connected with lower cold water plate pin fin bases (29). An upper cold water plate water inlet (20) and an upper cold water plate water outlet (21) are respectively arranged at two sides of the upper water cooling plate (18); two sides of the lower water cooling plate (19) are respectively provided with a lower water cooling plate water inlet (22) and a lower water cooling plate water outlet (23).
The utility model uses the special solder layer to replace the common solder layer between the chip and the substrate, which is helpful to exert the high temperature characteristic of the material and improve the longitudinal heat conduction capability of the heat from the chip to the substrate, thereby reducing the highest temperature of the module and prolonging the service life of the module; in order to obviously improve the heat conductivity between the die and the insulating substrate, a sintering connection technology or a brazing technology is adopted without welding joints, the connection between the substrate and the radiating fin unit is realized, and a high-efficiency high-power IGBT module is realized.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the same, and those skilled in the art can still modify or substitute the specific embodiments of the present invention with reference to the above embodiments, and any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention are all within the scope of the claims of the present invention pending.
Claims (8)
1. A double-sided hybrid heat dissipation structure of a high power density IGBT module, comprising:
the device comprises an upper layer heat pipe (1), a lower layer heat pipe (9), an upper water cooling plate (18), a lower water cooling plate (19) and a power module (30); the upper surface and the lower surface of the power module (30) are respectively connected with the upper-layer heat pipe (1) and the lower-layer heat pipe (9), the parts of the upper-layer heat pipe (1) and the lower-layer heat pipe (9) which are not connected with the power module (30) are connected with each other through a solder layer, the upper surface of the part of the upper-layer heat pipe (1) which is connected with each other through the solder layer is connected with the upper water cooling plate (18), and the lower surface of the part of the lower-layer heat pipe (9) which is connected with each other through the solder layer is connected with the lower water cooling plate (19); the power module (30) comprises an IGBT chip (12) and an FWD chip (5), and the upper surface and the lower surface of the double-sided hybrid heat dissipation structure are located on the same plane.
2. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module according to claim 1, characterized in that the power module is connected with the upper layer heat pipe (1) and the lower layer heat pipe (9) through a solder layer.
3. The double-sided hybrid heat dissipation structure of a high power density IGBT module according to claim 1, wherein the power module (30) further comprises: the copper-clad laminate comprises a first insulating substrate upper copper layer (3), a first insulating substrate (10), a first insulating substrate lower copper layer (4), a second solder layer (11), a fifth solder layer (6), a second insulating substrate upper copper layer (7) and a second insulating substrate (8); a lower layer heat pipe (9), a first insulating substrate (10), a fourth solder layer (13), a second insulating substrate lower copper layer (14) and a third solder layer (16);
the upper surface of the IGBT chip (12) is connected with the lower surface of the lower copper layer (4) of the first insulating substrate through a second solder layer (11), the upper surface of the FWD chip (5) is connected with the lower surface of the lower copper layer (4) of the first insulating substrate through a third solder layer (16), the upper surface of the lower copper layer (4) of the first insulating substrate is connected with the lower surface of the first insulating substrate (10), the upper surface of the first insulating substrate (10) is connected with the lower surface of the upper copper layer (3) of the first insulating substrate, and the upper surface of the upper copper layer (3) of the first insulating substrate is connected with the upper heat pipe (1) through a first solder layer (2);
the lower surface of the IGBT chip (12) is connected with the upper surface of the upper copper layer (7) of the second insulating substrate through a fourth solder layer (13), the lower surface of the FWD chip (5) is connected with the upper surface of the upper copper layer (7) of the second insulating substrate through a fifth solder layer (6), the lower surface of the upper copper layer (7) of the second insulating substrate is connected with the upper surface of the second insulating substrate (8), the lower surface of the second insulating substrate (8) is connected with the upper surface of the lower copper layer (14) of the second insulating substrate, and the lower surface of the lower copper layer (14) of the second insulating substrate is connected with the upper surface of the lower heat pipe (9) through a sixth solder layer (15).
4. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module according to claim 3, characterized in that the sintered joints of the IGBT chip (12) and the FWD chip (5) bonded to the copper surface are formed by the second solder layer (11), the third solder layer (16), the fifth solder layer (6) and the fourth solder layer (13).
5. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module according to claim 4, characterized in that the second solder layer (11), the third solder layer (16), the fifth solder layer (6) and the fourth solder layer (13) are sintered by Ag-based material or Cu-based material.
6. The double-sided hybrid heat dissipation structure of the high power density IGBT module according to claim 1, characterized in that the first insulating substrate (10) and the second insulating substrate (8) are deposited with AlN-Si 3N4 film by DC reactive sputtering.
7. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module as recited in claim 1, wherein the upper water-cooling plate (18) is provided with upper cold water plate pin type water-cooling fin columns (17), and the upper cold water plate pin type water-cooling fin columns (17) are connected with upper cold water plate pin fin bases (27); the lower water cooling plate (19) is provided with lower cold water plate pin type water cooling fin columns (28), and the lower cold water plate pin type water cooling fin columns (28) are connected with lower cold water plate pin fin bases (29).
8. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module according to claim 1, wherein an upper cold water plate water inlet (20) and an upper cold water plate water outlet (21) are respectively arranged at two sides of the upper water cooling plate (18); and a lower cold water plate water inlet (22) and a lower cold water plate water outlet (23) are respectively arranged at two sides of the lower water cold plate (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922105166.0U CN210805758U (en) | 2019-11-29 | 2019-11-29 | Double-sided hybrid heat dissipation structure of high-power-density IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922105166.0U CN210805758U (en) | 2019-11-29 | 2019-11-29 | Double-sided hybrid heat dissipation structure of high-power-density IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210805758U true CN210805758U (en) | 2020-06-19 |
Family
ID=71228574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922105166.0U Active CN210805758U (en) | 2019-11-29 | 2019-11-29 | Double-sided hybrid heat dissipation structure of high-power-density IGBT module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210805758U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890337A (en) * | 2019-11-29 | 2020-03-17 | 上海睿驱微电子科技有限公司 | Double-sided hybrid heat dissipation structure of high-power-density IGBT module |
-
2019
- 2019-11-29 CN CN201922105166.0U patent/CN210805758U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890337A (en) * | 2019-11-29 | 2020-03-17 | 上海睿驱微电子科技有限公司 | Double-sided hybrid heat dissipation structure of high-power-density IGBT module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107170714B (en) | Low parasitic inductance power module and double-sided heat dissipation low parasitic inductance power module | |
| CN102664177B (en) | Power semiconductor module adopting double-sided cooling | |
| US20030179596A1 (en) | Electrical bus with associated porous metal heat sink and method of manufacturing same | |
| AU2004216692B2 (en) | Electrical bus with associated porous metal heat sink and method of manufacturing same | |
| CN109817591B (en) | Double-sided water-cooling heat dissipation structure of high-power-density IGBT module and processing technology | |
| CN105070695A (en) | Bi-side heat radiation electric car power module | |
| CN207165544U (en) | A kind of power model provided with two-side radiation device | |
| JP2002270748A (en) | Semiconductor module and power converter | |
| CN105161467A (en) | Power module for electric automobile | |
| US20230395464A1 (en) | Power semiconductor module and manufacturing method thereof | |
| CN110071079A (en) | A kind of power device packaging structure and its method | |
| CN112736042A (en) | Double-sided water-cooled power module | |
| CN210805758U (en) | Double-sided hybrid heat dissipation structure of high-power-density IGBT module | |
| CN202585404U (en) | Igbt module | |
| CN110797318A (en) | A double-sided heat pipe cooling IGBT package structure | |
| CN215578506U (en) | Full-bridge direct water-cooling SiC module for vehicle | |
| CN208861980U (en) | Power module assembly, power semiconductor modular and vehicle | |
| CN113838821A (en) | Heat dissipation member for SiC planar packaging structure and preparation method thereof | |
| CN113517237B (en) | Full-bridge direct water-cooling SiC vehicle module | |
| CN114267649A (en) | Double-sided heat dissipation SiC half-bridge module packaging structure with extremely low parasitic inductance | |
| CN105957848B (en) | A kind of bottom plate and its modular device with integrated heat pipe | |
| CN210805757U (en) | IGBT packaging structure with double-sided heat pipe cooling | |
| CN110890337A (en) | Double-sided hybrid heat dissipation structure of high-power-density IGBT module | |
| CN214797383U (en) | Double-sided water-cooled power module | |
| CN205069617U (en) | Power module and vehicle that has it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |