CN112320754A - Online testing structure and method for line width of semiconductor conductive film - Google Patents
Online testing structure and method for line width of semiconductor conductive film Download PDFInfo
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- CN112320754A CN112320754A CN202011168378.4A CN202011168378A CN112320754A CN 112320754 A CN112320754 A CN 112320754A CN 202011168378 A CN202011168378 A CN 202011168378A CN 112320754 A CN112320754 A CN 112320754A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000012360 testing method Methods 0.000 title claims abstract description 28
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 239000000523 sample Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 abstract description 6
- 230000005284 excitation Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000001360 synchronised effect Effects 0.000 abstract description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
- B81C99/004—Testing during manufacturing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses an online test structure and method for the line width of a semiconductor conductive film, wherein a round semiconductor film which is connected with one end side of the semiconductor conductive film to be tested into a whole is prepared, four contact electrodes are arranged on the peripheral side of the round semiconductor film, the opening angle of the contact electrodes is measured and calculated by adopting an improved four-point probe method, and the semiconductor square resistance of the semiconductor film is further obtained. And then applying voltage to the semiconductor conductive film to be tested, calculating the resistance value of the semiconductor conductive film by measuring the current between the two electrodes, and finally obtaining the width value of the line width of the semiconductor conductive film according to the relation between the resistance and the geometric dimension of the semiconductor conductive film to be tested. The test structure of the invention is completed by adopting a basic micro-electro-mechanical processing technology, and the processing process is synchronous with the micro-electro-mechanical device, thereby meeting the requirement of on-line test. In the test process, a simple direct current source is used as an excitation source, and all excitation and test processes can be completed only by adopting common voltage test equipment.
Description
Technical Field
The invention relates to an online testing structure and method for the line width of a semiconductor conductive film.
Background
The film linewidth of a microelectromechanical thin film device is an important parameter that affects the performance of the device. By measuring the line width of the film on line, the size of the device can be obtained, and the precision of the device can be controlled.
Semiconductors are important materials used in surface micromachining processes, and the basic processes of machining are as follows: a layer of material, referred to as a sacrificial layer, is first deposited on the silicon wafer. Then, the pattern layer is defined by photoetching, and a structural layer film is manufactured on the sacrificial layer by using a chemical vapor deposition method and the like. And finally, etching to remove the sacrificial layer to separate the movable part of the miniature part from the sacrificial layer to form the semiconductor film structure. The material of the sacrificial layer is usually a dielectric material, and the structural layer is a semiconductor material. Manufacturers of micro-electro-mechanical products want to be able to monitor the line width of the semiconductor conductive film on line and reflect the process error in the manufacturing process in real time. Therefore, on-line testing of microelectromechanical products without leaving the processing environment and with convenient equipment becomes an essential means of controlling the process.
Disclosure of Invention
The purpose of the invention is as follows: in view of the above prior art, an online testing structure and method for the line width of a semiconductor conductive film are provided.
The technical scheme is as follows: an on-line test method for the line width of the semiconductor conducting film features that in Cartesian coordinate system, the semiconductor conducting film to be tested on the surface of flat dielectric layer is parallel to the x-axis direction and its effective length is L1The width is W; the method comprises the following steps:
step 1: preparing a round semiconductor film on one end side of a semiconductor conductive film to be detected, wherein the round semiconductor film and the semiconductor conductive film to be detected are connected into an integral structure;
step 2: respectively manufacturing two anchor areas at intervals on the insulating substrate on two sides of the semiconductor conductive film to be tested along the x-axis direction;
and step 3: respectively preparing metal electrodes connected with the semiconductor conductive film to be tested in the anchor area;
and 4, step 4: sequentially preparing first to fourth contact electrodes at intervals along the circumference of the circular semiconductor film, wherein the opening angle of the connection between the first to fourth contact electrodes and the circular semiconductor film is alpha;
and 5: measuring the square resistance R of the round semiconductor film by using the first to the fourth contact electrodes and adopting an improved four-point probe methodsq；
Step 6: applying constant current to the two metal electrodes on the same side of the semiconductor conductive film to be tested along the x-axis direction, measuring the voltage between the two metal electrodes on the other side, wherein the ratio of the voltage to the current is a resistor RA；
And 7: calculating the width of the semiconductor conductive film to be detected according to the following formula:
further, the step 5 comprises the following specific steps:
step 501: applying constant current between the first contact electrode and the fourth contact electrode, measuring the voltage between the first contact electrode and the fourth contact electrode, wherein the ratio of the voltage to the current is a resistor Ra；
Step 502: applying constant current between the first contact electrode and the fourth contact electrode, measuring the voltage between the second contact electrode and the fourth contact electrode, wherein the ratio of the voltage to the current is resistance Rb；
Step 503: calculating the sheet resistance R of the semiconductor according to the following formulasq：
In the formula, i is an imaginary unit, P, Q, S, T is an intermediate quantity, and specifically:
wherein, K [. C]Is a first type of complete elliptic integral function; r obtained by measurementaAnd RbSubstituting the following equation to solve for α:
Ra/Rb＝ga(α)/gb(α)
wherein:
an online test structure of the line width of a semiconductor conductive film comprises a semiconductor conductive film to be tested, four metal electrodes, a round semiconductor film and first to fourth contact electrodes; the semiconductor conductive film to be tested is positioned on the surface of the flat dielectric layer; the four metal electrodes are arranged on the anchor areas at two sides of the semiconductor conductive film to be tested along the length direction at intervals, and the metal electrodes are electrically connected with the semiconductor conductive film to be tested; the round semiconductor film is arranged at one end side of the semiconductor conductive film to be detected and is connected with the semiconductor conductive film to be detected into an integral structure; the first to fourth contact electrodes are uniformly arranged on the peripheral side of the circular semiconductor film, and the opening angle connected with the circular semiconductor film is alpha.
Further, the anchor region is disposed on the insulating substrate.
Further, the opening angle alpha is 30-45 degrees.
Has the advantages that: the test structure of the invention is completed by adopting a basic micro-electro-mechanical processing technology, the processing process is synchronous with a micro-electro-mechanical device, no special processing requirement exists, and the test structure completely meets the requirement of on-line test. In the test process, a simple direct current source is used as an excitation source, and all excitation and test processes can be completed only by adopting common voltage test equipment. The requirement on test equipment is low, and the test process and the test parameter values are stable.
Drawings
Fig. 1 is a schematic diagram of an online measurement structure of a line width of a semiconductor conductive film according to the present invention.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1, an on-line measuring structure of a semiconductor conductive film line width includes a semiconductor conductive film 101 to be measured, four metal electrodes 103, a circular semiconductor film 201, and first to fourth contact electrodes 201 to 205. The semiconductor conductive film 101 to be tested is positioned on the surface of the flat dielectric layer, the four metal electrodes 103 are arranged on the anchor areas 102 on two sides of the semiconductor conductive film 101 to be tested along the length direction at intervals, the anchor areas 102 are arranged on the insulating substrate, and the metal electrodes 103 are electrically connected with the semiconductor conductive film 101 to be tested. The circular semiconductor film 201 is arranged on one end side of the semiconductor conductive film 101 to be tested and is connected with the semiconductor conductive film 101 to be tested into a whole structure. The first to fourth contact electrodes 201 to 205 are uniformly arranged on the peripheral side of the circular semiconductor film 201, the opening angle of the connection with the circular semiconductor film 201 is alpha, and the size of alpha is more than or equal to 30 degrees and less than or equal to 45 degrees.
An on-line measuring method for the line width of semiconductor conducting film features that in Cartesian coordinate system, the semiconductor conducting film 101 to be measured on the surface of flat dielectric layer is parallel to the x-axis direction and its effective length is L1The width is W; the method comprises the following steps:
step 1: a circular semiconductor film 201 is prepared on one end side of the semiconductor conductive film 101 to be tested, and the circular semiconductor film 201 and the semiconductor conductive film 101 to be tested are connected into an integral structure.
Step 2: two anchor regions 102 are respectively manufactured on the insulating substrate at intervals on two sides of the semiconductor conductive film 101 to be tested along the x-axis direction.
And step 3: metal electrodes 103 connected to the semiconductor conductive film 101 to be tested are respectively prepared in the anchor regions 102.
And 4, step 4: first to fourth contact electrodes 201 to 205 are sequentially prepared at intervals along the circumference of the circular semiconductor film 201, and the opening angle of the connection between the first to fourth contact electrodes 201 to 205 and the circular semiconductor film 201 is alpha.
And 5: measuring the square resistance R of the round semiconductor film 201 by using the first to fourth contact electrodes 201 to 205 and adopting a four-point probe methodsqThe method comprises the following specific steps:
step 501: applying a constant current between the first contact electrode 201 and the fourth contact electrode 204, measuring the voltage between the first contact electrode 201 and the fourth contact electrode 204, the ratio of the voltage to the current being the resistance Ra；
Step 502: applying a constant current between the first contact electrode 201 and the fourth contact electrode 204, measuring the voltage between the second contact electrode 202 and the fourth contact electrode 204, the ratio of the voltage to the current being the resistance Rb；
Step 503: by defining the square resistance, the resistance R can be obtainedaAnd RbExpression (c):
Rsqis a semiconductor sheet resistance ga(. alpha.) and gb(α) is a function related only to the opening angle α of the contact electrode, and g can be obtained by mapping the circular semiconductor thin film structure to a simple structurea(. alpha.) and gbThe expression of (α) is as follows:
in the formula, i is an imaginary unit, P, Q, S, T is an intermediate quantity, and specifically:
wherein K [. cndot. ] is a first class elliptic integral function;
r obtained by measurementaAnd RbSubstituting formula (2) for α according to the following formula:
Ra/Rb＝ga(α)/gb(α) (3)
then substituting the obtained alpha into the following formula to calculate the square resistance R of the semiconductorsq：
Step 6: applying constant current to the two metal electrodes 103 on the same side of the semiconductor conductive film 101 to be measured along the x-axis direction, measuring the voltage between the two metal electrodes 103 on the other side, wherein the ratio of the voltage to the current is a resistance RA。
And 7: calculating the width of the semiconductor conductive film 101 to be tested according to the following formula according to the relation between the resistance and the geometric dimension of the semiconductor conductive film to be tested:
the fabrication of the test structure is described below in terms of a typical two-layer semiconductor micro-electromechanical surface fabrication process.
An N-type semiconductor silicon wafer is selected, a silicon dioxide layer with the thickness of 100 nanometers is thermally grown, a silicon nitride layer with the thickness of 500 nanometers is deposited through a low-pressure chemical vapor deposition process, and an insulating substrate is formed. A layer of 300 nm semiconductor is deposited by a low pressure chemical vapor deposition process and is heavily doped N-type to make the layer of semiconductor a conductor, and a portion of the anchor region 102 is formed by etching through a photolithography process. A dielectric layer of 2000 nm thickness is deposited using a low pressure chemical vapor deposition process and the anchor region 102 is patterned by a photolithographic process. Depositing a layer of semiconductor with the thickness of 1500 nanometers by using a low-pressure chemical vapor deposition process, carrying out N-type heavy doping on the semiconductor, and forming a semiconductor test structure pattern 101 and an anchor region 102 by using a photoetching process, wherein the thickness of the anchor region is the sum of the thicknesses of the two semiconductors. A pattern of metal electrodes 103 is formed on the anchor region 102 by a lift-off process, and finally the structure is released by etching the dielectric layer.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (5)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022205726A1 (en) * | 2021-03-29 | 2022-10-06 | 长鑫存储技术有限公司 | Alignment error test method, adjustment method, test system, and storage medium |
| WO2022268039A1 (en) * | 2021-06-23 | 2022-12-29 | 东南大学 | Online thickness measurement structure for semiconductor conductive thin film and measurement method thereof |
| CN116466221A (en) * | 2023-05-06 | 2023-07-21 | 法特迪精密科技（苏州）有限公司 | Switching probe testing device |
| US11935797B2 (en) | 2021-03-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Test method, adjustment method, test system, and storage medium for alignment error |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW379398B (en) * | 1997-06-28 | 2000-01-11 | Hyundai Electronics Ind | Measuring-pattern and measuring method for width of wire in semiconductor device |
| US6297517B1 (en) * | 2000-02-28 | 2001-10-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
| US20100315108A1 (en) * | 2009-06-15 | 2010-12-16 | Stmicroelectronics (Rousset) Sas | Device for detecting the thinning down of the substrate of an integrated circuit chip |
| KR101267469B1 (en) * | 2012-12-26 | 2013-05-31 | (주)센서시스템기술 | Pressure sensor |
| CN104390580A (en) * | 2014-12-04 | 2015-03-04 | 上海集成电路研发中心有限公司 | Metal film film-thickness measuring system and method of measuring film-thickness by adopting system |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW379398B (en) * | 1997-06-28 | 2000-01-11 | Hyundai Electronics Ind | Measuring-pattern and measuring method for width of wire in semiconductor device |
| US6297517B1 (en) * | 2000-02-28 | 2001-10-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
| US20100315108A1 (en) * | 2009-06-15 | 2010-12-16 | Stmicroelectronics (Rousset) Sas | Device for detecting the thinning down of the substrate of an integrated circuit chip |
| KR101267469B1 (en) * | 2012-12-26 | 2013-05-31 | (주)센서시스템기술 | Pressure sensor |
| CN104390580A (en) * | 2014-12-04 | 2015-03-04 | 上海集成电路研发中心有限公司 | Metal film film-thickness measuring system and method of measuring film-thickness by adopting system |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022205726A1 (en) * | 2021-03-29 | 2022-10-06 | 长鑫存储技术有限公司 | Alignment error test method, adjustment method, test system, and storage medium |
| US11935797B2 (en) | 2021-03-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Test method, adjustment method, test system, and storage medium for alignment error |
| WO2022268039A1 (en) * | 2021-06-23 | 2022-12-29 | 东南大学 | Online thickness measurement structure for semiconductor conductive thin film and measurement method thereof |
| CN116466221A (en) * | 2023-05-06 | 2023-07-21 | 法特迪精密科技（苏州）有限公司 | Switching probe testing device |
| CN116466221B (en) * | 2023-05-06 | 2024-03-19 | 苏州法特迪科技股份有限公司 | Switching probe testing device |
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