CN111146103B - Wafer detection method and detection equipment - Google Patents
Wafer detection method and detection equipment Download PDFInfo
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- CN111146103B CN111146103B CN201811313925.6A CN201811313925A CN111146103B CN 111146103 B CN111146103 B CN 111146103B CN 201811313925 A CN201811313925 A CN 201811313925A CN 111146103 B CN111146103 B CN 111146103B
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- 238000000034 method Methods 0.000 claims description 31
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- 238000012360 testing method Methods 0.000 claims description 19
- 235000012431 wafers Nutrition 0.000 description 85
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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Abstract
The disclosure provides a wafer detection method and detection equipment, and belongs to the technical field of wafer detection. The wafer detection method comprises the following steps: providing a wafer and a probe, wherein the wafer is provided with a bonding pad; determining an initial position, wherein the probe is contacted with the bonding pad at the initial position; controlling the probe to move to a plurality of detection positions in a set direction; detecting whether the voltage of the probe is in a preset range or not when the probe is positioned at each detection position; selecting a detection position with the largest deviation from the initial position along the set direction from among detection positions of the voltage of the probe within a preset range as a limit detection position of the set direction; determining an offset range according to the offset of the limit detection position in the set direction relative to the initial position, wherein the offset is a vector; and controlling the probe to move and detecting the wafer according to the offset range. The wafer detection method can rapidly and accurately control the position of the probe and reduce the wafer detection period.
Description
Technical Field
The disclosure relates to the technical field of wafer detection, and in particular relates to a wafer detection method and detection equipment.
Background
Wafer testing is an important process in the fabrication of integrated circuits, which typically uses probes integrated on a probe card to make contact with pads of individual chips (dies) on the wafer, and then uses electrical testing equipment to test the performance of the chips.
In the test, the probe is effectively contacted with the bonding pad to leave a trace on the bonding pad, so that optical means (such as visual inspection or machine vision) are generally adopted in the prior art to detect the trace, so as to determine whether the offset position of the probe is proper. However, the wafer inspection involves multiple test sites and different test steps, and repeatedly inspecting the needle marks to determine whether the probe position is properly set is not only cumbersome, but also increases the test cycle; and the pad and the probe repeatedly contact with each other to leave a plurality of needle marks, which increases the difficulty in identifying the needle marks.
The above information disclosed in the background section is only for enhancement of understanding of the background of the disclosure and therefore it may include information that does not form the prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a wafer detection method and detection equipment, which can rapidly and accurately control the position of a probe and reduce the wafer detection period.
In order to achieve the above purpose, the present disclosure adopts the following technical scheme:
According to a first aspect of the present disclosure, there is provided a method for inspecting a wafer, including:
Providing a wafer and probes, wherein the wafer is provided with a bonding pad;
determining an initial position, wherein the probe is contacted with the bonding pad at the initial position;
controlling the probe to move to a plurality of detection positions in a set direction;
Detecting whether the voltage of the probe is in a preset range or not when the probe is positioned at each detection position;
Selecting a detection position with the largest deviation from the initial position along the set direction from among the detection positions of the probes, the voltage of which is within a preset range, as a limit detection position of the set direction;
determining an offset range according to the offset of the limit detection position of the set direction relative to the initial position, wherein the offset is a vector;
and controlling the probe to move according to the offset range and detecting the wafer.
In one exemplary embodiment of the present disclosure, controlling the probe to move to a plurality of detection positions in a set direction includes:
And controlling the probe to sequentially move from the initial position along a set direction according to a preset step length, wherein the position of the probe after each movement is the detection position.
In one exemplary embodiment of the present disclosure, selecting, as the limit detection position of the setting direction, a detection position that is most shifted from the initial position in the setting direction among the detection positions where the voltage of the probe is within a preset range includes:
in a detection position, if the voltage of the probe is in the preset range, controlling the probe to move to a next detection position;
and in a detection position, if the voltage of the probe is not in the preset range for the first time, selecting the last detection position as the limit detection position of the set direction.
In an exemplary embodiment of the present disclosure, the setting direction includes:
the first direction is parallel to the plane of the wafer;
A second direction opposite to the first direction;
a third direction parallel to the plane of the wafer and perpendicular to the first direction;
And a fourth direction opposite to the third direction.
In one exemplary embodiment of the present disclosure, determining the offset range from the offset amount of the limit detection position of the set direction with respect to the initial position includes:
determining a first direction limit offset according to the offset of the limit detection position of the first direction relative to the initial position;
Determining a second direction limit offset according to the offset of the limit detection position of the second direction relative to the initial position;
determining a third-direction limit offset according to the offset of the third-direction limit detection position relative to the initial position;
Determining a fourth-direction limit offset according to the offset of the fourth-direction limit detection position relative to the initial position;
setting the first direction limit offset and the second direction limit offset as two end point values of a first dimension range respectively;
Setting the third-direction limit offset and the fourth-direction limit offset as two end values of a second dimension range, respectively;
the first dimension range and the second dimension range are combined into the offset range.
In one exemplary embodiment of the present disclosure, controlling the probe movement and inspecting the wafer according to the offset range includes:
determining a target offset, wherein the target offset is located in the offset range;
Determining a target detection position according to the target offset and the initial position;
and controlling the probe to move to the target detection position, and detecting the wafer.
In an exemplary embodiment of the present disclosure, the detecting the wafer a plurality of times, controlling the probe to move and detect the wafer according to the offset range includes:
Determining a plurality of target offset values, wherein each target offset value corresponds to each wafer detection one by one, and any target offset value is positioned in the offset range;
Determining a plurality of target detection positions corresponding to each wafer detection one by one according to each target offset and the initial position;
And in any one wafer detection, selecting the target detection position corresponding to the wafer detection, controlling the probe to move to the selected target detection position, and detecting the wafer.
In one exemplary embodiment of the present disclosure, the number of probes is plural and moves synchronously; the detection method further comprises the following steps:
in a detection position, if the voltage of at least one probe is not in the preset range, recording the number and the statistics number of the probes with the voltages not in the preset range;
If the number of the probes with the voltage not in the preset range is not more than 10% of the total number of the probes, controlling each probe to move next time;
if the number of the probes with the voltage not in the preset range is more than 10% of the total number of the probes, stopping control to perform the next movement;
And checking each probe corresponding to each recorded number.
According to a second aspect of the present disclosure, there is provided a wafer inspection apparatus, including an electrical inspection unit for controlling a probe to contact with a pad of a wafer and inspecting the wafer through the electrical inspection unit; the wafer inspection apparatus further includes:
an initial position unit for determining an initial position of the probe, the probe being in contact with the pad at the initial position;
A moving unit for controlling the probe to move to a plurality of detection positions in a set direction;
The judging unit is used for controlling the electrical property detecting unit to detect the voltage of the probe when the probe is positioned at each detecting position and judging whether the voltage is positioned in a preset range or not;
A limit determination unit configured to select, as a limit detection position in the setting direction, a detection position that is most shifted in the setting direction from the initial position among the detection positions in which the voltage of the probe is within a preset range;
A range determining unit configured to determine an offset range according to an offset of the limit detection position in the set direction with respect to the initial position, the offset being a vector;
And the detection unit is used for controlling the probe to move and controlling the electrical detection unit to detect the wafer according to the offset range.
According to the wafer detection method, the offset range of the probe is determined through the electrical test method, and when the offset of the probe relative to the initial position is located in the offset range, the probe can be in contact with the bonding pad. Then, when the control probe detects the wafer, the movement of the probe is controlled according to the offset range, so that the probe can be contacted with the bonding pad after each movement. The method can realize effective control of probe movement, can rapidly and accurately control the position of the probe, and avoid die grade reduction or rejection on the wafer caused by the probe movement to a non-bonding pad area on the wafer. In addition, as the probe can be ensured to be contacted with the bonding pad after moving, the probe mark does not need to be detected by optical means before or after each detection to determine the contact between the probe and the bonding pad, so that the wafer detection flow is saved, the wafer detection period is shortened, and the problem of identifying the target probe mark from a plurality of probe marks left by the contact between the probe and the bonding pad for many times is avoided.
Drawings
The above and other features and advantages of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 is a flow chart of a wafer inspection method according to an embodiment of the present disclosure.
Fig. 2 is a flow chart of a method of determining an initial position according to an embodiment of the present disclosure.
Fig. 3 is a flow diagram of a method of determining an offset range according to an embodiment of the present disclosure.
Fig. 4 is a flow diagram of controlling probe movement and wafer inspection according to an offset range in accordance with an embodiment of the present disclosure.
Fig. 5 is a flowchart illustrating a target offset determination method according to an embodiment of the present disclosure.
Fig. 6 is a schematic flow diagram of a control probe of an embodiment of the present disclosure contacting different areas of a pad during different inspections.
Fig. 7 is a flow diagram of a detection probe card of an embodiment of the present disclosure.
Fig. 8 is a schematic diagram of a coordinate system established in an embodiment of the present disclosure.
Fig. 9 is a schematic diagram of four limit detection positions determined in an embodiment of the present disclosure.
Fig. 10 is a schematic diagram of an offset range established in an embodiment of the present disclosure.
FIG. 11 is a schematic diagram of selecting a target offset in an embodiment of the present disclosure.
Fig. 12 is a schematic structural diagram of a wafer inspection apparatus according to an embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the disclosed aspects may be practiced without one or more of the specific details, or with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the main technical ideas of the present disclosure.
The terms "a," "an," "the" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. in addition to the listed elements/components/etc. The terms "first" and "second" and the like are used merely as labels, and are not intended to limit the number of their objects.
The disclosure provides a wafer detection method, which is used for controlling a probe to be in contact with a bonding pad of a wafer and detecting the wafer through an electrical detection unit. As shown in fig. 1, the wafer inspection method includes the steps of:
Step S110, providing a wafer and a probe, wherein the wafer is provided with a bonding pad;
step S120, determining an initial position, wherein the probe is contacted with the bonding pad at the initial position;
step S130, controlling the probe to move to a plurality of detection positions in a set direction;
step S140, detecting whether the voltage of the probe is in a preset range when the probe is positioned at each detection position;
Step S150, selecting a detection position with the largest deviation from the initial position along the set direction from among detection positions of the voltage of the probe within a preset range as a limit detection position of the set direction;
step S160, determining an offset range according to the offset of the limit detection position in the set direction relative to the initial position, wherein the offset is a vector;
step S170, controlling the probe to move and detecting the wafer according to the offset range.
According to the wafer detection method, the offset range of the probe is determined through the electrical test method, and when the offset of the probe relative to the initial position is located in the offset range, the probe can be in contact with the bonding pad. Then, when the control probe detects the wafer, the movement of the probe is controlled according to the offset range, so that the probe can be contacted with the bonding pad after each movement. This allows for effective control of probe movement, avoiding die level degradation or scrap on the wafer caused by probe movement to non-pad areas on the wafer. In addition, as the probe can be ensured to be contacted with the bonding pad after moving, the probe mark does not need to be detected by optical means before or after each detection to determine the contact between the probe and the bonding pad, so that the wafer detection flow is saved, and the problem of identifying the target probe mark from a plurality of probe marks left by the contact between the probe and the bonding pad for many times is avoided.
The following describes and illustrates in detail each step of the wafer inspection method provided in the present disclosure with reference to the accompanying drawings.
In step S110, the wafer may be a wafer of standard specifications, such as a 6-inch wafer, an 8-inch wafer, or a 12-inch wafer, or may be a non-standard specification wafer. It will be appreciated that at least one die (integrated circuit) is provided on the wafer, and that the dicing area between the dies may be provided with test circuitry; the pads may be disposed on at least one of the integrated circuit and the test circuit.
The number of probes provided is at least one, and when the number of probes is plural, it is necessary to ensure that all probes move synchronously. A probe integration device may be used to achieve synchronized movement of multiple probes, such as with a probe card or the like. The shape, specification, material, etc. of the probe may be selected according to the test requirements, test items, and specific pad conditions, which is not particularly limited in the present disclosure.
In one embodiment, when the probe contacts the pad, a trace of the needle may be left on the pad; the operator can determine whether the probe and the bonding pad are in effective contact or not, the strength of mutual contact, and the like by detecting the position, the depth, the existence or the like of the probe mark.
In step S120, the initial position may be determined by a stepwise search method. For example, as shown in fig. 2, in an embodiment, step S120 may be implemented by the following method:
step S210, controlling the probe to move to a preset position, and detecting whether the probe is in contact with the bonding pad or not;
step S220, if the probe is judged to be in contact with the bonding pad, determining the preset position as an initial position;
Step S230, if the probe is not in contact with the bonding pad, the preset position in step S210 is updated, and step S210 is re-executed until the initial position is determined.
It will be appreciated that if the number of probes is plural, it may be determined that the probes are in contact with the pads when it is necessary to ensure that all of the probes are in contact with the corresponding pads.
The detection of whether the probe is in contact with the pad may be accomplished by a variety of methods, such as by optical methods, machine vision techniques, electrical testing methods, or other methods.
For example, in one embodiment, after the probes are moved to a predetermined position, the probes are removed and inspected by a visual inspection to see whether corresponding traces exist on the pads corresponding to the probes. When the corresponding needle mark exists, the pad is contacted with the corresponding probe at the preset position.
In another embodiment, after the probe is moved to a preset position, the probe is removed and photographed by a CCD camera, and whether the probe is in contact with the pad is determined after the pad and the needle mark are identified by a machine vision technology.
In another embodiment, after the probe moves to a preset position, outputting constant current to the probe through the electrical detection unit and detecting the voltage of the probe, and judging that the probe is in contact with the bonding pad when the voltage of the probe is within a preset range; otherwise, judging that the probe is not contacted with the bonding pad. Of course, the technician can check the situation that the probe is not in contact with the bonding pad by other methods such as an optical method and a machine vision technology to correct the initial position, thereby eliminating the situation that the probe voltage cannot be in a preset range due to disqualification of a crystal grain (integrated circuit) or a test circuit.
In an embodiment, a planar coordinate system may also be established, and the coordinates of the initial position are set as the origin (0, 0). In this way, the shift range determined in step S160 is equivalent to the position range of the probe available to the wafer inspection side, so that the control of the probe in step S170 can be simplified. For example, a plane rectangular coordinate system may be established with the initial position as an origin coordinate, where the plane rectangular coordinate system includes an x-axis and a y-axis, and the x-axis and the y-axis are perpendicular to each other and are parallel to a plane on which the wafer is located. In still further embodiments, the probe is moved under the control of a precision displacement platform, which may include an x-drive mechanism that controls the movement of the probe in the x-direction and a y-drive mechanism that controls the movement of the probe in the y-direction; when the plane rectangular coordinate system is established, the direction of the x axis can be made to be the x direction, and the direction of the y axis can be made to be the y direction.
In step S130, the control probe is moved to a plurality of detection positions along a set direction, which is a direction in which the detection positions are offset from the initial position. It will be appreciated that the order in which the probes are moved to each of the test positions is not fixed, and that the direction of movement may be along the set direction or opposite to the set direction when the probes are moved from the previous test position to the next test position, and that the technician may perform the presetting according to the actual requirement.
Accordingly, in step S150, a different method may be selected according to the manner in which the probe is moved, and a detection position that is most shifted in the set direction from the initial position may be selected from among detection positions in which the voltage of the probe is within a preset range. For example, it is possible to find out all the detection positions of the probe with the voltage within the preset range, calculate the offset distances of the found detection positions in the set direction relative to the initial position, and find out the detection positions corresponding to the maximum offset distances. For another example, when the probe is sequentially moved to each detection position along the set direction, or the movement direction is adjusted according to feedback of the electrical test result, the limit detection position of the set direction may be determined in combination with the movement rule of the probe.
For example, in one embodiment, the probe may be controlled to sequentially move from the initial position along the set direction according to a preset step length, and the position of the probe after each movement is the detection position.
In a detection position, if the voltage of the probe is in a preset range, the probe is controlled to move to a next detection position;
in a detection position, if the voltage of the probe is not in the preset range for the first time, the last detection position is selected as the limit detection position of the set direction.
The moving direction of the probe from the last detection position to the next detection position is a set direction, and the moving step length is a preset step length. The preset step size may be determined according to the accuracy of the offset range desired to be obtained. For example, in one embodiment, if the accuracy of the desired offset range is 1 micron, the preset step size may be set to 1 micron.
In another embodiment, the probe is moved from the origin to a first detection position, and if the voltage of the probe at the first detection position is within a preset range, the probe is continuously moved forward from the first detection position to a second detection position along a set direction; if the voltage of the probe at the first detection position is not in the preset range, the probe is controlled to move forwards from the first detection position to a third detection position along the direction opposite to the set direction. Thus, each time the probe is moved such that a new detection position is located between two adjacent old detection positions (irrespective of the new detection position), and the voltage of one of the old detection position probes is located in a preset range, and the voltage of the other old detection position probe is not located in the preset range. Thus, when the number of movements reaches the preset number or the distance between two adjacent old detection positions is smaller than the preset value, the old detection position of the probe whose voltage is in the preset range can be selected as the limit detection position in the set direction.
Of course, in other embodiments of the present disclosure, other probe movement sequences and other methods of determining the limit detection position of the set direction may also be selected, and the present disclosure is not described in detail.
In step S130, the set direction may be one direction or a plurality of different directions. For example, in one embodiment, the setting direction may include:
the first direction is parallel to the plane of the wafer;
A second direction opposite to the first direction;
A third direction parallel to the plane of the wafer and perpendicular to the first direction;
And a fourth direction opposite to the third direction.
Accordingly, in step S150, the limit detection position in the first direction, the limit detection position in the second direction, the limit detection position in the third direction, and the limit detection position in the fourth direction may be determined, respectively.
In a further aspect, if a planar rectangular coordinate system with the initial position as the origin is established, the first direction and the second direction may be parallel to the x-axis direction, and the third direction and the fourth direction may be parallel to the y-axis direction.
In step S140, when the probe is located at each detection position, the electrical detection unit may be controlled to output a constant current to the probe, and then detect the voltage of the probe, so as to determine whether the voltage of the probe is located in a preset range. If the voltage of the probe is in the preset range, the probe can be judged to be in effective contact with the bonding pad; if the voltage of the probe is not within the preset range, it can be judged that the probe is not in effective contact with the bonding pad.
In step S160, the offset of the limit detection position in the set direction with respect to the initial position may be obtained first to obtain the limit offset in the set direction; the offset range is then determined based on the set direction limit offset. It is understood that the offset (including the limit offset) is a vector, which may be described in terms of coordinate points. The coordinate point may be described by two distance component values or by a combination of direction and distance.
For example, in one embodiment, as shown in fig. 3, the offset range may be determined as follows:
Step S310, determining a first direction limit offset according to the offset of the limit detection position of the first direction relative to the initial position;
step S320, determining a second direction limit offset according to the offset of the limit detection position of the second direction relative to the initial position;
step S330, determining the limit offset of the third direction according to the offset of the limit detection position of the third direction relative to the initial position;
Step S340, determining a fourth-direction limit offset according to the offset of the limit detection position in the fourth direction relative to the initial position;
step S350, setting the first direction limit offset and the second direction limit offset as two end point values of the first dimension range respectively;
step S360, setting the third direction limit offset and the fourth direction limit offset as two end point values of the second dimension range respectively;
In step S370, the first dimension range and the second dimension range are synthesized as an offset range.
Thus, the offset ranges are rectangular in distribution, with one side being the length defined by the first dimension range and the other side being the length defined by the second dimension range. Wherein the direction of the first dimension is parallel to the first direction and the second direction, and the direction of the second dimension is parallel to the third direction and the fourth direction.
As shown in fig. 4, step S170 may be implemented by:
step S410, determining a target offset, wherein the target offset is located in an offset range;
Step S420, determining a target detection position according to the target offset and the initial position;
In step S430, the probe is controlled to move to the target detection position, and the wafer is detected.
It is understood that when the coordinate system is set and the initial position is the origin, the target detection position determined in step S420 is the same as the target offset in result.
In one embodiment, the form of the target offset may be determined from the form of the offset range. For example, as shown in fig. 5, the target offset may be determined as follows:
Step S510, determining a first dimension offset, so that the first dimension offset is located in a first dimension range;
Step S520, determining a second dimension offset, such that the second dimension offset is located in a second dimension range;
in step S530, the first dimension offset and the second dimension offset are synthesized into the target offset.
In the following, a way of determining the range of offset and a way of determining the target offset will be further described and illustrated in a specific embodiment. The method comprises the following steps:
a) Wafers and probes are provided.
B) According to the method of step S120, an initial position is determined, and then a plane direct coordinate system (x-y coordinate system) is established with the initial position O as an origin. The planar direct coordinate system is shown in fig. 8, in which a dotted frame P represents a pad.
C) According to the method described in step S130 to step S150, the limit detection position C in the positive axis direction and the limit detection position D in the negative axis direction of the limit detection position B, y in the negative axis direction of the x-axis positive direction of the probe are determined, respectively, wherein the coordinates of the four positions are (x 1,0)、(x2,0)、(0,y1) and (0, y 2), respectively, and x 1>0>x2,y1>0>y2. Each limit detection position is shown in fig. 9 in a planar direct coordinate system.
D) Determining the coordinates of the positive x-axis direction limit offset as (x 1, 0), the coordinates of the negative x-axis direction limit offset as (x 2, 0), the coordinates of the positive y-axis direction limit offset as (0, y 1), and the coordinates of the negative y-axis direction limit offset as (0, y 2);
Determining the X-axis range as (X, 0), wherein X ε [ X 2,x1 ];
Determining the Y-axis range as (0, Y), wherein Y ε [ Y 2,y1 ];
The offset range M is synthesized, where X e [ X 2,x1 ] and Y e [ Y 2,y1 ], as shown in fig. 10, where the offset range M is represented by a dashed box M of A, B, C and D four points.
E) Determining an X-axis offset (X, 0), wherein X ε [ X 2,x1 ], such that (X, 0) ε (X, 0);
Determining a y-axis offset (0, y), wherein y ε [ y 2,y1 ], such that (0, y) ε (0, y);
The target offset Q is synthesized, which is (x, y), where x ε [ x 2,x1 ] and y ε [ y 2,y1 ], and the coordinate expression of the target offset Q is shown in FIG. 11, where Q is within the range of the dashed box M. Since the coordinate system takes the initial position as the origin, the coordinate expression of the determined target offset Q is the coordinate point of the target detection position.
The probe is controlled to move to (x, y) according to the target offset Q being (x, y).
For example, an x-y plane rectangular coordinate system is established with the initial position as the origin, each coordinate axis has a unit of micrometers, and if coordinates of the limit detection position in the positive x-axis direction, the limit detection position in the negative x-axis direction, the limit detection position in the positive y-axis direction, and the limit detection position in the negative y-axis direction are determined to be (25, 0), (-15, 0), (0, 10), and (0, -20), respectively, the probe is controlled to move to the target detection position to detect the wafer, the range of the x-axis coordinate of the target detection position is [ -15, 25], and the range of the y-axis coordinate is [ -20, 10].
In an embodiment, the number of times of wafer inspection is multiple, and step S170 may be implemented as follows, as shown in fig. 6:
step S610, determining a plurality of target offsets, wherein each target offset corresponds to each wafer detection one by one, and any target offset is located in an offset range;
Step S620, determining a plurality of target detection positions corresponding to each wafer detection one by one according to each target offset and the initial position;
In step S630, in any one wafer inspection, a target inspection position corresponding to the wafer inspection is selected, and the probe is controlled to move to the selected target inspection position to inspect the wafer.
Therefore, different areas of the bonding pad can be pricked by the probes during different wafer detection by controlling different target offset amounts, the probes and the bonding pad are prevented from contacting at the same position during each wafer detection, and the bonding pad is prevented from being pricked or damaged under multiple contact of the probes. It will be appreciated that any one wafer inspection corresponds to one target offset, and does not mean that the target offsets are different; the probes in the plurality of different wafer inspection may be in contact with the same location of the corresponding pad.
In an embodiment, if the number of probes is multiple and synchronously moves in a preset step along a preset direction, especially when a probe card or the like is used, in order to avoid the wafer detection result error caused by the damage of a part of probes, and ensure that no damage occurs to the probe card, the wafer detection method provided in the disclosure may further include step S700 before step S150 and step S160: and detecting the probe card to ensure that the probe card is not damaged.
As shown in fig. 7, step S700 may be performed by the following steps in order to improve efficiency of detecting the probe card:
Step S710, if the voltage of at least one probe is not within the preset range at a detection position, the number and the statistics of the probes with the voltages not within the preset range are recorded;
Step S720, if the number of the probes with the voltage not in the preset range is not more than 10% of the total number of the probes, controlling each probe to move next time;
step S730, if the number of probes with voltage not in the preset range is more than 10% of the total number of probes, stopping control to move next time;
Step S740, each probe corresponding to each recorded number is checked.
According to this method, probes that move out of the pad range by the first 10% can be recorded and detected to confirm whether or not the voltage of the probes is abnormal due to damage of the probes (the voltage of the probes is not within a preset range); if the probe is damaged, the probe card needs to be replaced. The method can prompt about possible damage to the probe card, and can give out 10% of probes most likely to be damaged, so that the pertinence and the efficiency of probe card detection are improved. For example, when 20 probes are disposed on the probe card, the first probe has a failure offset distance in the first direction (the offset distance of the probe when the voltage value is not within the preset range for the first time) of 10 micrometers, the second probe has a failure offset distance in the first direction of 15 micrometers, and the remaining probes have a failure offset distance in the first direction of 21-23 micrometers, so that it is possible to check the first probe and the second probe before proceeding to step S170 to see whether the first probe and the second probe are damaged. If any of the first and second probes is damaged, the probe card needs to be replaced.
It should be noted that although the steps of the methods of the present disclosure are illustrated in a particular order in the figures, this does not require or imply that the steps must be performed in that particular order or that all of the illustrated steps must be performed in order to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step to perform, and/or one step decomposed into multiple steps to perform, etc., all are considered part of the present disclosure.
The present disclosure also provides a wafer inspection apparatus, as shown in fig. 12, where the wafer inspection apparatus includes an electrical inspection unit 810, configured to control a probe to contact with a pad of a wafer and inspect the wafer through the electrical inspection unit 810; the wafer inspection apparatus further includes:
an initial position unit 820 for determining an initial position of the probe, at which the probe contacts the pad;
A moving unit 830 for controlling the probe to move to a plurality of detection positions in a set direction;
a judging unit 840 for controlling the electrical detecting unit 810 to detect the voltage of the probe and judging whether the voltage is within a preset range when the probe is at each detecting position;
A limit determination unit 850 for selecting, as a limit detection position of the setting direction, a detection position having the largest deviation from the initial position in the setting direction among the detection positions where the voltage of the probe is within the preset range;
A range determining unit 860 configured to determine an offset range from an offset amount of the limit detection position in the set direction with respect to the initial position, the offset amount being a vector;
The detecting unit 870 is configured to control the probe to move and control the electrical detecting unit 810 to detect the wafer according to the offset range.
The specific details and the corresponding effects of the modules and units of the wafer inspection apparatus are described in detail in the corresponding wafer inspection method, so that the details are not repeated here.
It should be noted that although in the above detailed description several modules or units of the inspection apparatus of the wafer are mentioned, this division is not mandatory. Indeed, the features and functionality of two or more modules or units described above may be embodied in one module or unit in accordance with embodiments of the present disclosure. Conversely, the features and functions of one module or unit described above may be further divided into a plurality of modules or units to be embodied.
It is to be understood that the disclosure is not limited in its application to the details of construction and the arrangement of components set forth in the disclosure. The disclosure is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications are within the scope of the present disclosure. It should be understood that the present disclosure disclosed and defined herein extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute various alternative aspects of the present disclosure. The embodiments described herein explain the best modes known for practicing the disclosure and will enable others skilled in the art to utilize the disclosure.
Claims (9)
1. The wafer detection method is characterized by comprising the following steps:
Providing a wafer and probes, wherein the wafer is provided with a bonding pad;
determining an initial position, wherein the probe is contacted with the bonding pad at the initial position;
controlling the probe to move to a plurality of detection positions in a set direction;
Detecting whether the voltage of the probe is in a preset range or not when the probe is positioned at each detection position;
Selecting a detection position with the largest deviation from the initial position along the set direction from among the detection positions of the probes, the voltage of which is within a preset range, as a limit detection position of the set direction;
determining an offset range according to the offset of the limit detection position of the set direction relative to the initial position, wherein the offset is a vector;
and controlling the probe to move according to the offset range and detecting the wafer.
2. The detection method according to claim 1, wherein controlling the movement of the probe to a plurality of detection positions in a set direction comprises:
And controlling the probe to sequentially move from the initial position along a set direction according to a preset step length, wherein the position of the probe after each movement is the detection position.
3. The detection method according to claim 2, wherein selecting, as the limit detection position of the setting direction, a detection position that is most shifted from the initial position in the setting direction among the detection positions where the voltage of the probe is within a preset range, includes:
in a detection position, if the voltage of the probe is in the preset range, controlling the probe to move to a next detection position;
and in a detection position, if the voltage of the probe is not in the preset range for the first time, selecting the last detection position as the limit detection position of the set direction.
4. The method according to claim 1, wherein the setting direction includes:
the first direction is parallel to the plane of the wafer;
A second direction opposite to the first direction;
a third direction parallel to the plane of the wafer and perpendicular to the first direction;
And a fourth direction opposite to the third direction.
5. The detection method according to claim 4, wherein determining an offset range from an offset amount of a limit detection position of the set direction with respect to the initial position includes:
determining a first direction limit offset according to the offset of the limit detection position of the first direction relative to the initial position;
Determining a second direction limit offset according to the offset of the limit detection position of the second direction relative to the initial position;
determining a third-direction limit offset according to the offset of the third-direction limit detection position relative to the initial position;
Determining a fourth-direction limit offset according to the offset of the fourth-direction limit detection position relative to the initial position;
setting the first direction limit offset and the second direction limit offset as two end point values of a first dimension range respectively;
Setting the third-direction limit offset and the fourth-direction limit offset as two end values of a second dimension range, respectively;
the first dimension range and the second dimension range are combined into the offset range.
6. The inspection method of claim 1, wherein controlling the probe movement and inspecting the wafer according to the offset range comprises:
determining a target offset, wherein the target offset is located in the offset range;
Determining a target detection position according to the target offset and the initial position;
and controlling the probe to move to the target detection position, and detecting the wafer.
7. The inspection method of claim 1, wherein the number of wafer inspections is a plurality of times, and controlling the probe to move and inspect the wafer according to the offset range comprises:
Determining a plurality of target offset values, wherein each target offset value corresponds to each wafer detection one by one, and any target offset value is positioned in the offset range;
Determining a plurality of target detection positions corresponding to each wafer detection one by one according to each target offset and the initial position;
And in any one wafer detection, selecting the target detection position corresponding to the wafer detection, controlling the probe to move to the selected target detection position, and detecting the wafer.
8. The method according to claim 2, wherein the number of probes is plural and moves synchronously; the detection method further comprises the following steps:
in a detection position, if the voltage of at least one probe is not in the preset range, recording the number and the statistics number of the probes with the voltages not in the preset range;
If the number of the probes with the voltage not in the preset range is not more than 10% of the total number of the probes, controlling each probe to move next time;
If the number of the probes with the voltage not in the preset range is more than 10% of the total number of the probes, stopping control to perform the next movement;
And checking each probe corresponding to each recorded number.
9. The wafer detection equipment comprises an electrical detection unit, a detection unit and a control unit, wherein the electrical detection unit is used for controlling a probe to be in contact with a bonding pad of a wafer and detecting the wafer through the electrical detection unit; the wafer is provided with at least one integrated circuit, a cutting area of the integrated circuit is provided with a test circuit, and the bonding pad is arranged on at least one of the integrated circuit or the test circuit; the wafer detection device is characterized by further comprising:
an initial position unit for determining an initial position of the probe, the probe being in contact with the pad at the initial position;
A moving unit for controlling the probe to move to a plurality of detection positions in a set direction;
The judging unit is used for controlling the electrical property detecting unit to detect the voltage of the probe when the probe is positioned at each detecting position and judging whether the voltage is positioned in a preset range or not;
A limit determination unit configured to select, as a limit detection position in the setting direction, a detection position that is most shifted in the setting direction from the initial position among the detection positions in which the voltage of the probe is within a preset range;
A range determining unit configured to determine an offset range according to an offset of the limit detection position in the set direction with respect to the initial position, the offset being a vector;
And the detection unit is used for controlling the probe to move and controlling the electrical detection unit to detect the wafer according to the offset range.
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| CN111293048B (en) * | 2018-12-07 | 2024-07-02 | 紫光同芯微电子有限公司 | Wafer testing system and method thereof |
| CN112014713B (en) * | 2020-10-20 | 2021-02-12 | 晶芯成(北京)科技有限公司 | Wafer electrical property test method and test equipment |
| CN115966482A (en) * | 2021-10-11 | 2023-04-14 | 长鑫存储技术有限公司 | Wafer Measurement Method |
| CN115166301B (en) * | 2022-06-02 | 2024-10-29 | 杭州广立微电子股份有限公司 | Base electrode selection method of test structure |
| CN115236492B (en) * | 2022-07-26 | 2025-04-04 | 江西兆驰半导体有限公司 | A method and device for detecting LED chip probes |
| CN115825706A (en) * | 2023-02-24 | 2023-03-21 | 长春光华微电子设备工程中心有限公司 | Control method for probe temperature |
| CN116705670B (en) * | 2023-08-07 | 2024-01-02 | 拉普拉斯新能源科技股份有限公司 | Grabbing method and device for height Wen Zhou |
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| JP2008028103A (en) * | 2006-07-20 | 2008-02-07 | Fujifilm Corp | Wafer prober |
| JP2008294292A (en) * | 2007-05-25 | 2008-12-04 | Tokyo Seimitsu Co Ltd | Prober, contacting method and program for prober |
| JP4997127B2 (en) * | 2008-01-23 | 2012-08-08 | 東京エレクトロン株式会社 | Inspection method and program recording medium recording this inspection method |
| WO2010140814A2 (en) * | 2009-06-03 | 2010-12-09 | 주식회사 쎄믹스 | Wafer probe station capable of actively controlling tilt of chuck and controlling method thereof |
| CN102707215B (en) * | 2012-05-22 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | Testing method of wafer |
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