CN111146103A - Wafer detection method and detection equipment - Google Patents
Wafer detection method and detection equipment Download PDFInfo
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- CN111146103A CN111146103A CN201811313925.6A CN201811313925A CN111146103A CN 111146103 A CN111146103 A CN 111146103A CN 201811313925 A CN201811313925 A CN 201811313925A CN 111146103 A CN111146103 A CN 111146103A
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Abstract
The disclosure provides a wafer detection method and detection equipment, and belongs to the technical field of wafer detection. The wafer detection method comprises the following steps: providing a wafer and a probe, wherein the wafer is provided with a bonding pad; determining an initial position at which the probe contacts the pad; controlling the probe to move to a plurality of detection positions in a set direction; when the probe is positioned at each detection position, detecting whether the voltage of the probe is positioned in a preset range; selecting a detection position with the maximum deviation from the initial position along the set direction as an extreme detection position of the set direction in each detection position with the voltage of the probe within a preset range; determining an offset range according to the offset of the limit detection position relative to the initial position in the set direction, wherein the offset is a vector; and controlling the probe to move and detecting the wafer according to the offset range. The wafer detection method can quickly and accurately control the position of the probe, and reduce the wafer detection period.
Description
Technical Field
The present disclosure relates to the field of wafer inspection technologies, and in particular, to a wafer inspection method and an inspection apparatus.
Background
Wafer testing is an important process in the fabrication of integrated circuits, and generally involves contacting probes integrated on a probe card with pads of each chip (die) on a wafer, and then testing the performance of the chip with electrical test equipment.
In the testing process, a probe effectively contacts with a pad to leave a needle mark on the pad, so that the prior art usually adopts an optical means (such as visual inspection or machine vision) to detect the needle mark and further judge whether the offset position of the probe is proper. However, wafer inspection involves multiple test sites and different test steps, and it is not only cumbersome to repeat the inspection of the probe marks to determine whether the probe position settings are appropriate, which increases the test cycle; and the bonding pad and the probe are contacted repeatedly for a plurality of times to leave a plurality of pin marks, which increases the difficulty of confirming the pin marks.
The above information disclosed in the background section is only for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute prior art that is known to a person of ordinary skill in the art.
Disclosure of Invention
The present disclosure provides a wafer inspection method and an inspection apparatus, which can rapidly and accurately control the position of a probe, and reduce the wafer inspection cycle.
In order to achieve the purpose, the technical scheme adopted by the disclosure is as follows:
according to a first aspect of the present disclosure, there is provided a wafer inspection method, including:
providing a wafer and a probe, wherein the wafer is provided with a bonding pad;
determining an initial position at which the probe makes contact with the pad;
controlling the probe to move to a plurality of detection positions in a set direction;
when the probe is positioned at each detection position, detecting whether the voltage of the probe is positioned in a preset range;
selecting, as an extreme detection position in the setting direction, a detection position that is most displaced from the initial position in the setting direction, among the detection positions at which the voltage of the probe is within a preset range;
determining an offset range according to the offset of the limit detection position in the set direction relative to the initial position, wherein the offset is a vector;
and controlling the probe to move and detecting the wafer according to the offset range.
In an exemplary embodiment of the present disclosure, controlling the probe to move to a plurality of detection positions in a set direction includes:
and controlling the probe to move from the initial position along a set direction in sequence according to a preset step length, wherein the position of the probe after each movement is the detection position.
In an exemplary embodiment of the present disclosure, selecting, as the limit detection position of the setting direction, a detection position that is most deviated from the initial position in the setting direction among the detection positions where the voltage of the probe is within a preset range includes:
at a detection position, if the voltage of the probe is within the preset range, controlling the probe to move to the next detection position;
and at a detection position, if the voltage of the probe is not in the preset range for the first time, selecting the last detection position as the limit detection position of the set direction.
In an exemplary embodiment of the present disclosure, the setting the direction includes:
the first direction is parallel to the plane of the wafer;
a second direction opposite the first direction;
a third direction parallel to the plane of the wafer and perpendicular to the first direction;
a fourth direction, opposite to the third direction.
In an exemplary embodiment of the present disclosure, the determining the offset range according to the offset amount of the limit detection position of the set direction with respect to the initial position includes:
determining a first direction limit offset according to the offset of the limit detection position of the first direction relative to the initial position;
determining a second direction limit offset according to the offset of the limit detection position of the second direction relative to the initial position;
determining a third direction limit offset according to the offset of the limit detection position in the third direction relative to the initial position;
determining a fourth direction limit offset according to the offset of the limit detection position in the fourth direction relative to the initial position;
setting the first direction limit offset and the second direction limit offset as two endpoint values of a first dimension range, respectively;
setting the third direction limit offset and the fourth direction limit offset as two endpoint values of a second dimension range, respectively;
and synthesizing the first dimension range and the second dimension range into the offset range.
In an exemplary embodiment of the present disclosure, controlling the probe to move and inspect the wafer according to the offset range includes:
determining a target offset, wherein the target offset is located in the offset range;
determining a target detection position according to the target offset and the initial position;
and controlling the probe to move to the target detection position to detect the wafer.
In an exemplary embodiment of the present disclosure, if the number of times of the wafer inspection is multiple, controlling the probe to move and inspecting the wafer according to the offset range includes:
determining a plurality of target offset quantities, wherein each target offset quantity corresponds to each secondary wafer detection one by one, and any target offset quantity is positioned in the offset range;
determining a plurality of target detection positions corresponding to each wafer detection one by one according to each target offset and the initial position;
and in any wafer detection, selecting the target detection position corresponding to the wafer detection, controlling the probe to move to the selected target detection position, and detecting the wafer.
In an exemplary embodiment of the present disclosure, the number of the probes is plural and moves in synchronization; the detection method further comprises the following steps:
at a detection position, if the voltage of at least one probe is not in the preset range, recording the number of the probe of which the voltage is not in the preset range and counting the number;
if the number of the probes of which the voltage is not within the preset range is not more than 10% of the total number of the probes, controlling each probe to move next time;
if the number of the probes of which the voltage is not within the preset range is more than 10% of the total number of the probes, stopping controlling to move the next time;
and checking each probe corresponding to each recorded number.
According to a second aspect of the present disclosure, there is provided a wafer inspection apparatus, including an electrical inspection unit for controlling a probe to contact a pad of a wafer and inspecting the wafer through the electrical inspection unit; the wafer detection equipment further comprises:
an initial position unit for determining an initial position of the probe, the probe being in contact with the pad at the initial position;
a moving unit for controlling the probe to move to a plurality of detection positions in a set direction;
the judging unit is used for controlling the electrical property detecting unit to detect the voltage of the probe when the probe is positioned at each detection position and judging whether the voltage is positioned in a preset range;
a limit determination unit configured to select, as a limit detection position in the setting direction, a detection position that is most deviated from the initial position in the setting direction, among the detection positions at which the voltage of the probe is within a preset range;
the range determining unit is used for determining a deviation range according to the deviation amount of the limit detection position relative to the initial position in the set direction, and the deviation amount is a vector;
and the detection unit is used for controlling the probe to move and controlling the electrical property detection unit to detect the wafer according to the offset range.
According to the wafer detection method provided by the disclosure, the offset range of the probe is determined through an electrical test method, and when the offset of the probe relative to the initial position is in the offset range, the probe can be in contact with the bonding pad. Then, when the control probe detects the wafer, the movement of the probe is controlled according to the offset range, so that the probe can be contacted with the bonding pad after moving every time. The method can realize effective control of the probe movement, can quickly and accurately control the position of the probe, and avoids the reduction or rejection of the grade of the crystal grains on the wafer caused by the probe moving to the non-pad area on the wafer. In addition, the probe can be ensured to contact with the bonding pad after moving, so that the contact between the probe and the bonding pad is determined without detecting the pin mark by an optical means before or after each detection, the wafer detection process is saved, the wafer detection period is shortened, and the problem of identifying the target pin mark from a plurality of pin marks left by contacting the probe on the bonding pad for a plurality of times is avoided.
Drawings
The above and other features and advantages of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 is a schematic flow chart of a wafer inspection method according to an embodiment of the present disclosure.
Fig. 2 is a schematic flow chart diagram of a method of determining an initial position according to an embodiment of the present disclosure.
Fig. 3 is a flow chart illustrating a method of determining an offset range according to an embodiment of the present disclosure.
Fig. 4 is a schematic flow chart illustrating the process of controlling the probe movement and inspecting the wafer according to the offset range according to the embodiment of the disclosure.
Fig. 5 is a flowchart illustrating a method for confirming a target offset according to an embodiment of the present disclosure.
Fig. 6 is a schematic flow chart of the control probe contacting different areas of the pad in different inspections according to the embodiment of the present disclosure.
Fig. 7 is a schematic flow chart illustrating the probe card testing according to the embodiment of the disclosure.
Fig. 8 is a schematic diagram of a coordinate system established in an embodiment of the present disclosure.
Fig. 9 is a schematic diagram of four extreme detection positions determined in an embodiment of the present disclosure.
FIG. 10 is a schematic illustration of the offset ranges established in an embodiment of the present disclosure.
Fig. 11 is a schematic diagram of selecting a target offset in an embodiment of the present disclosure.
Fig. 12 is a schematic structural diagram of an inspection apparatus for a wafer according to an embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the embodiments of the disclosure can be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the primary technical ideas of the disclosure.
The terms "a," "an," "the," and the like are used to denote the presence of one or more elements/components/parts; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc. The terms "first" and "second", etc. are used merely as labels, and are not limiting on the number of their objects.
The disclosure provides a wafer detection method, which is used for controlling a probe to be in contact with a bonding pad of a wafer and detecting the wafer through an electrical detection unit. As shown in fig. 1, the method for inspecting a wafer includes the steps of:
step S110, providing a wafer and a probe, wherein the wafer is provided with a bonding pad;
step S120, determining an initial position, wherein the probe is contacted with the bonding pad at the initial position;
step S130, controlling the probe to move to a plurality of detection positions in the set direction;
step S140, detecting whether the voltage of the probe is in a preset range when the probe is positioned at each detection position;
step S150, selecting the detection position with the maximum deviation relative to the initial position along the set direction as the limit detection position of the set direction in each detection position with the voltage of the probe within the preset range;
step S160, determining an offset range according to the offset of the limit detection position relative to the initial position in the set direction, wherein the offset is a vector;
step S170, controlling the probe to move and detecting the wafer according to the offset range.
According to the wafer detection method provided by the disclosure, the offset range of the probe is determined through an electrical test method, and when the offset of the probe relative to the initial position is in the offset range, the probe can be in contact with the bonding pad. Then, when the control probe detects the wafer, the movement of the probe is controlled according to the offset range, so that the probe can be contacted with the bonding pad after moving every time. The method can realize effective control of probe movement, and avoid the reduction or rejection of the grade of the crystal grains on the wafer caused by the probe moving to the non-pad area on the wafer. In addition, the probe can be ensured to be in contact with the bonding pad after moving, so that the contact between the probe and the bonding pad is determined without detecting the pin mark through an optical means before or after each detection, the wafer detection process is saved, and the problem of identifying the target pin mark from a plurality of pin marks left by the multiple times of contact with the probe on the bonding pad is avoided.
The steps of the wafer inspection method provided by the present disclosure are explained and explained in detail below with reference to the drawings.
In step S110, the provided wafers may be standard wafers, such as 6-inch wafers, 8-inch wafers, or 12-inch wafers, or non-standard wafers. It is understood that at least one die (integrated circuit) is disposed on the wafer, and a test circuit may be disposed in a dicing area between the dies; the pad may be disposed on at least one of the integrated circuit and the test circuit.
The number of the provided probes is at least one, and when the number of the probes is multiple, all the probes need to be ensured to move synchronously. A probe integration apparatus may be used to achieve synchronized movement of the plurality of probes, such as with a probe card or the like. The shape, specification, material, etc. of the probe can be selected according to the test requirements, test items and specific pad conditions, and the disclosure is not particularly limited thereto.
In one embodiment, when the probe is in contact with the pad, a needle mark may be left on the pad; the operator can determine whether the probe is effectively contacted with the pad or not and the contact strength of the probe and the pad by detecting the position, depth, existence and the like of the pin mark.
In step S120, an initial position may be determined by a step-by-step search method. For example, as shown in fig. 2, in an embodiment, the step S120 may be implemented by:
step S210, controlling the probe to move to a preset position, and detecting whether the probe is contacted with the bonding pad;
step S220, if the probe is judged to be in contact with the bonding pad, determining the preset position as an initial position;
in step S230, if it is determined that the probe does not contact the pad, the preset position in step S210 is updated, and step S210 is executed again until the initial position is determined.
It can be understood that if the number of the probes is multiple, the probes can be judged to be in contact with the pads when all the probes are required to be in contact with the corresponding pads.
The detection of whether the probe is in contact with the pad can be achieved by various methods, for example, by optical methods, machine vision techniques, electrical testing methods, or other methods.
For example, in one embodiment, after the probes are moved to a predetermined position, the probes are removed and a visual inspection is performed to see whether corresponding pin marks exist on the bonding pads corresponding to the probes. When the corresponding needle mark exists, the pad can be judged to be in contact with the corresponding probe at the preset position.
In another embodiment, after the probe is moved to a preset position, the probe is removed and a picture is taken by a CCD camera, and the contact between the probe and the bonding pad is judged after the bonding pad and the needle mark are identified by a machine vision technology.
In another embodiment, after the probe moves to a preset position, outputting a constant current to the probe through the electrical property detection unit and detecting the voltage of the probe, and when the voltage of the probe is within a preset range, judging that the probe is in contact with the pad; otherwise, judging that the probe is not in contact with the bonding pad. Of course, the technician can also check the condition that the probe is not in contact with the pad by other methods such as an optical method, a machine vision technique, and the like to correct the initial position, so as to eliminate the condition that the probe voltage cannot be within the preset range due to the failure of the die (integrated circuit) or the test circuit.
In one embodiment, a plane coordinate system may also be established, and the coordinates of the initial position are set as the origin (0, 0). As such, the offset range determined in step S160 is equivalent to the range of positions of the probe that can be used on the wafer inspection side, which can simplify the control of the probe in step S170. For example, a planar rectangular coordinate system may be established with the initial position as an origin coordinate, and the planar rectangular coordinate system includes an x axis and a y axis, and the x axis and the y axis are perpendicular to each other and are both parallel to a plane in which the wafer is located. In still further embodiments, the probe is moved under the control of a precision translation stage, which may include an x-drive mechanism that controls movement of the probe in the x-direction and a y-drive mechanism that controls movement of the probe in the y-direction; when a planar rectangular coordinate system is established, the direction of the x axis may be made to be the x direction, and the direction of the y axis may be made to be the y direction.
In step S130, the probe is controlled to move to a plurality of detection positions in a set direction, which is a direction of deviation of the detection positions from the initial positions. It can be understood that the sequence of moving the probe to each detection position is not fixed, and when the probe moves from the previous detection position to the next detection position, the moving direction may be along the set direction or opposite to the set direction, and the technician may preset the moving direction according to actual requirements.
Accordingly, in step S150, a different method may be selected according to the manner in which the probe moves, and a detection position having the largest deviation from the initial position in the set direction may be selected from among the detection positions in which the voltage of the probe is within the preset range. For example, all the detection positions where the voltage of the probe is in the preset range may be found, then the offset distance of each found detection position in the set direction from the initial position is calculated, and then the detection position corresponding to the maximum offset distance is found. For another example, when the probe is sequentially moved to each detection position along the set direction, or the movement direction is adjusted according to the feedback of the electrical test result, the limit detection position in the set direction may be determined according to the movement rule of the probe.
For example, in one embodiment, the probe may be controlled to move from the initial position along the setting direction in sequence according to a preset step length, and the position of the probe after each movement is the detection position.
In a detection position, if the voltage of the probe is within a preset range, controlling the probe to move to the next detection position;
and at a detection position, if the voltage of the probe is not in the preset range for the first time, selecting the last detection position as the limit detection position in the set direction.
The moving direction of the probe moving from the last detection position to the next detection position is a set direction, and the moving step length is a preset step length. The preset step size may be determined according to the accuracy of the offset range desired to be obtained. For example, in one embodiment, if the desired offset range is 1 micron accurate, the preset step size may be set to 1 micron.
In another embodiment, the probe is moved from the origin to a first detection position, and if the voltage of the probe at the first detection position is within a preset range, the probe is continuously moved forward from the first detection position to a second detection position along a set direction; and if the voltage of the probe at the first detection position is not in the preset range, controlling the probe to move forwards from the first detection position to a third detection position along the direction opposite to the set direction. In this way, the probe is moved each time such that the new detection position is located between two adjacent old detection positions (regardless of the new detection position), and the voltage of the probe is within a preset range at one of the old detection positions and is not within the preset range at the other old detection position. In this way, when the number of times of movement reaches the preset number of times or the distance between two adjacent old detection positions is smaller than the preset value, the old detection position where the voltage of the probe is in the preset range can be selected as the limit detection position of the set direction.
Of course, in other embodiments of the present disclosure, other probe moving sequences and other limit detection position methods for determining the set direction may be selected, and the present disclosure is not detailed in detail.
In step S130, the setting direction may be one direction, or a plurality of different directions. For example, in one embodiment, setting the direction may include:
a first direction parallel to the plane of the wafer;
a second direction opposite to the first direction;
a third direction parallel to the plane of the wafer and perpendicular to the first direction;
and a fourth direction, opposite to the third direction.
Accordingly, in step S150, the limit detection position in the first direction, the limit detection position in the second direction, the limit detection position in the third direction, and the limit detection position in the fourth direction may be determined, respectively.
In a further aspect, if a rectangular plane coordinate system with the initial position as the origin is established, the first direction and the second direction may be parallel to the x-axis direction, and the third direction and the fourth direction may be parallel to the y-axis direction.
In step S140, when the probe is located at each of the detecting positions, the electrical property detecting unit may be controlled to output a constant current to the probe, and then the voltage of the probe is detected, so as to determine whether the voltage of the probe is within the preset range. If the voltage of the probe is within the preset range, the probe can be judged to be in effective contact with the bonding pad; if the voltage of the probe is not in the preset range, the probe is judged not to be in effective contact with the bonding pad.
In step S160, the offset amount of the limit detection position in the setting direction from the initial position may be obtained to obtain the setting direction limit offset amount; the offset range is then determined based on the set direction limit offset. It will be appreciated that the offset (including the ultimate offset) is a vector, which may be described in terms of coordinate points. The coordinate point may be described by two distance component values or a combination of direction and distance.
For example, in one embodiment, as shown in fig. 3, the offset range may be determined as follows:
step S310, determining a first direction limit offset according to the offset of the limit detection position of the first direction relative to the initial position;
step S320, determining a second direction limit offset according to the offset of the limit detection position of the second direction relative to the initial position;
step S330, determining the third direction limit offset according to the offset of the limit detection position in the third direction relative to the initial position;
step S340, determining a fourth direction limit offset according to the offset of the limit detection position in the fourth direction relative to the initial position;
step S350, setting the first direction limit offset and the second direction limit offset as two end point values of the first dimension range respectively;
step S360, setting the third direction limit offset and the fourth direction limit offset as two endpoint values of the second dimension range respectively;
in step S370, the first dimension range and the second dimension range are synthesized into an offset range.
Thus, the offset ranges are distributed in a rectangular shape, wherein one side length is the length defined by the first dimension range, and the other side length is the length defined by the second dimension range. The direction of the first dimension is parallel to the first direction and the second direction, and the direction of the second dimension is parallel to the third direction and the fourth direction.
As shown in fig. 4, step S170 may be implemented by:
step S410, determining a target offset, wherein the target offset is located in an offset range;
step S420, determining a target detection position according to the target offset and the initial position;
step S430, controlling the probe to move to the target detection position, and detecting the wafer.
It is understood that when the coordinate system is set and the initial position is the origin, the target detection position determined at step S420 is identical in result to the target offset amount.
In an embodiment, the form of the target offset amount may be determined according to the form of the offset range. For example, as shown in fig. 5, the target offset may be determined as follows:
step S510, determining a first dimension offset so that the first dimension offset is in a first dimension range;
step S520, determining a second dimension offset so that the second dimension offset is in a second dimension range;
in step S530, the first dimension offset and the second dimension offset are synthesized into a target offset.
One way of determining the offset range and one way of determining the target offset will be further described and explained below in a specific embodiment. The method comprises the following steps:
A) a wafer and a probe are provided.
B) According to the method of step S120, an initial position is determined, and then a planar direct coordinate system (x-y coordinate system) is established with the initial position O as an origin. The planar direct coordinate system is shown in fig. 8, where the dashed box P represents the pad.
C) According to the method described in the steps S130 to S150, the limit detection position C of the probe in the positive direction of the x-axis A, x and the limit detection position C of the probe in the negative direction of the y-axis B, y are determined, respectively, wherein the coordinates of the four positions are (x) and (y) respectively1,0)、(x2,0)、(0，y1) And (0, y)2) Wherein x is1>0>x2，y1>0>y2. The respective extreme sensing positions are shown in the planar direct coordinate system in fig. 9.
D) The coordinate for determining the limit offset of the positive direction of the x axis is (x)10), the coordinate of the ultimate offset in the negative direction of the x-axis is determined as (x)20), determining the coordinate of the positive direction limit offset of the y axis as (0, y)1) Determining the coordinate of the limit offset of the negative direction of the y axis as (0, y)2)；
Determining the X-axis range as (X, 0), wherein X is equal to [ X ∈ [2，x1]；
Determining the Y-axis range as (0, Y), wherein Y belongs to [ Y ∈ [2，y1]；
Synthesizing a shift range M, wherein the shift range M is (X, Y), and X belongs to [ X ]2，x1]And Y is E [ Y2，y1]As shown in fig. 10, the offset range M is represented by A, B, C and a dashed box M of four points D.
E) Determining an x-axis offset (x, 0), where x ∈ [ x ]2，x1]Thus (X, 0) ∈ (X, 0);
determining a y-axis offset (0, y), where y ∈ [2，y1]Thus (0, Y) ∈ (0, Y);
synthesizing a target offset Q, wherein the target offset Q is (x, y), and x belongs to [ x ∈ [ ]2，x1]And y ∈ [ y [ [ y ]2，y1]The coordinate expression of the target offset Q is shown in fig. 11, where Q is located within the range of the dashed frame M. Since the coordinate system takes the initial position as the origin, the coordinate expression of the determined target offset Q is the coordinate point of the target detection position.
And controlling the probe to move to the position (x, y) according to the target offset Q being (x, y).
For example, an x-y plane rectangular coordinate system is established with the initial position as the origin, each coordinate axis is in micrometers, if the coordinates of the extreme detection position in the positive x-axis direction, the extreme detection position in the negative x-axis direction, the extreme detection position in the positive y-axis direction, and the extreme detection position in the negative y-axis direction are determined to be (25,0), (-15,0), (0, 10), and (0, -20), respectively, then the x-axis coordinate of the target detection position ranges from [ -15, 25], and the y-axis coordinate ranges from [ -20, 10] when the probe is controlled to move to the target detection position to detect the wafer.
In one embodiment, the number of wafer inspections is multiple times, and step S170 can be implemented by the following steps, as shown in fig. 6:
step S610, determining a plurality of target offsets, wherein each target offset corresponds to each wafer detection one by one, and any target offset is located in an offset range;
step S620, determining a plurality of target detection positions corresponding to each wafer detection one by one according to each target offset and initial position;
step S630, in any wafer inspection, selecting a target inspection position corresponding to the wafer inspection, and controlling the probe to move to the selected target inspection position to inspect the wafer.
Therefore, the probe can be pricked to different areas of the bonding pad when different wafers are detected by controlling different target offsets, the contact between the probe and the bonding pad at the same position during each wafer detection is avoided, and the bonding pad is prevented from being pricked or damaged under the condition of multiple contact of the probe. It can be understood that any one time of wafer detection corresponds to one target offset, which does not mean that each target offset is different; the probes in the different wafer inspections can contact with the same position of the corresponding bonding pad.
In an embodiment, if the number of the probes is multiple and the probes move sequentially along the set direction according to the preset step length in a synchronous manner, especially when a device such as a probe card is used, in order to avoid a wafer detection result error caused by damage of part of the probes and ensure that the probe card is not damaged, the wafer detection method provided by the present disclosure may further include step S700 before step S150 and step S160: and detecting the probe card to ensure that the probe card is not damaged.
As shown in fig. 7, step S700 may be performed by the following steps in order to improve the efficiency of inspecting the probe card:
step S710, at a detection position, if the voltage of at least one probe is not in a preset range, recording the number of the probe of which the voltage is not in the preset range and counting the number;
step S720, if the number of the probes of which the voltage is not in the preset range is not more than 10% of the total number of the probes, controlling each probe to move next time;
in step S740, each probe corresponding to each recorded number is inspected.
According to the method, probes which are moved out of the range of the bonding pad by the first 10% can be recorded and detected to confirm whether the probes are abnormal in voltage (the voltage of the probes is not in a preset range) caused by probe damage; if the probe is damaged, the probe card needs to be replaced. The method can give an indication about possible damage of the probe card, and can give 10% of the most possible damaged probes so as to improve the detection pertinence and efficiency of the probe card. For example, when 20 probes are disposed on the probe card, the offset failure distance of the first probe in the first direction (the offset failure distance of the probe when the voltage value is not within the preset range for the first time) is 10 micrometers, the offset failure distance of the second probe in the first direction is 15 micrometers, and the offset failure distances of the remaining probes in the first direction are 21 to 23 micrometers, the first probe and the second probe may be inspected to see whether the first probe and the second probe are damaged before performing step S170. If any one of the first and second probes is damaged, the probe card needs to be replaced.
It should be noted that although the various steps of the methods of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that these steps must be performed in this particular order, or that all of the depicted steps must be performed, to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions, etc., are all considered part of this disclosure.
The present disclosure also provides a wafer inspection apparatus, as shown in fig. 12, the wafer inspection apparatus includes an electrical property inspection unit 810, configured to control a probe to contact a pad of a wafer and inspect the wafer through the electrical property inspection unit 810; the wafer detection equipment further comprises:
an initial position unit 820 for determining an initial position of a probe, the probe being in contact with the pad at the initial position;
a moving unit 830 for controlling the probe to move to a plurality of detection positions in a set direction;
the judging unit 840 is used for controlling the electrical property detecting unit 810 to detect the voltage of the probe when the probe is located at each detection position, and judging whether the voltage is located in a preset range;
a limit determination unit 850 for selecting, as a limit detection position in the set direction, a detection position that is most deviated from the initial position in the set direction, among the detection positions at which the voltage of the probe is within the preset range;
a range determining unit 860 for determining a shift range according to a shift amount of the limit detection position with respect to the initial position in the setting direction, the shift amount being a vector;
the inspection unit 870 is used for controlling the probe to move and controlling the electrical inspection unit 810 to inspect the wafer according to the offset range.
The details and the corresponding effects of each module and unit of the wafer inspection apparatus have been described in detail in the corresponding wafer inspection method, and therefore are not described herein again.
It should be noted that although in the above detailed description several modules or units of the inspection apparatus of the wafer are mentioned, such a division is not mandatory. Indeed, the features and functionality of two or more modules or units described above may be embodied in one module or unit, in accordance with the disclosed embodiments. Conversely, the features and functions of one module or unit described above may be further divided into embodiments by a plurality of modules or units.
It is to be understood that the disclosure is not limited in its application to the details of construction and the arrangements of the components set forth in the specification. The present disclosure is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications are within the scope of the present disclosure. It should be understood that the disclosure disclosed and defined in this specification extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute various alternative aspects of the present disclosure. The embodiments described in this specification illustrate the best mode known for carrying out the disclosure and will enable those skilled in the art to utilize the disclosure.
Claims (9)
1. A method for detecting a wafer is characterized by comprising the following steps:
providing a wafer and a probe, wherein the wafer is provided with a bonding pad;
determining an initial position at which the probe makes contact with the pad;
controlling the probe to move to a plurality of detection positions in a set direction;
when the probe is positioned at each detection position, detecting whether the voltage of the probe is positioned in a preset range;
selecting, as an extreme detection position in the setting direction, a detection position that is most displaced from the initial position in the setting direction, among the detection positions at which the voltage of the probe is within a preset range;
determining an offset range according to the offset of the limit detection position in the set direction relative to the initial position, wherein the offset is a vector;
and controlling the probe to move and detecting the wafer according to the offset range.
2. The inspection method of claim 1, wherein controlling the probe to move to a plurality of inspection positions in a set direction comprises:
and controlling the probe to move from the initial position along a set direction in sequence according to a preset step length, wherein the position of the probe after each movement is the detection position.
3. The detection method according to claim 2, wherein selecting, as an extreme detection position in the setting direction, a detection position that is most deviated from the initial position in the setting direction, among the detection positions at which the voltage of the probe is within a preset range, comprises:
at a detection position, if the voltage of the probe is within the preset range, controlling the probe to move to the next detection position;
and at a detection position, if the voltage of the probe is not in the preset range for the first time, selecting the last detection position as the limit detection position of the set direction.
4. The detection method according to claim 1, wherein the setting the direction comprises:
the first direction is parallel to the plane of the wafer;
a second direction opposite the first direction;
a third direction parallel to the plane of the wafer and perpendicular to the first direction;
a fourth direction, opposite to the third direction.
5. The detection method according to claim 4, wherein determining the offset range according to the amount of offset of the extreme detection position of the set direction from the initial position includes:
determining a first direction limit offset according to the offset of the limit detection position of the first direction relative to the initial position;
determining a second direction limit offset according to the offset of the limit detection position of the second direction relative to the initial position;
determining a third direction limit offset according to the offset of the limit detection position in the third direction relative to the initial position;
determining a fourth direction limit offset according to the offset of the limit detection position in the fourth direction relative to the initial position;
setting the first direction limit offset and the second direction limit offset as two endpoint values of a first dimension range, respectively;
setting the third direction limit offset and the fourth direction limit offset as two endpoint values of a second dimension range, respectively;
and synthesizing the first dimension range and the second dimension range into the offset range.
6. The inspection method of claim 1, wherein controlling the probe to move and inspect the wafer according to the offset range comprises:
determining a target offset, wherein the target offset is located in the offset range;
determining a target detection position according to the target offset and the initial position;
and controlling the probe to move to the target detection position to detect the wafer.
7. The inspection method of claim 1, wherein the wafer is inspected a plurality of times, and controlling the probe to move and inspect the wafer according to the offset range comprises:
determining a plurality of target offset quantities, wherein each target offset quantity corresponds to each secondary wafer detection one by one, and any target offset quantity is positioned in the offset range;
determining a plurality of target detection positions corresponding to each wafer detection one by one according to each target offset and the initial position;
and in any wafer detection, selecting the target detection position corresponding to the wafer detection, controlling the probe to move to the selected target detection position, and detecting the wafer.
8. The detection method according to claim 2, wherein the number of the probes is plural and moves synchronously; the detection method further comprises the following steps:
at a detection position, if the voltage of at least one probe is not in the preset range, recording the number of the probe of which the voltage is not in the preset range and counting the number;
if the number of the probes of which the voltage is not within the preset range is not more than 10% of the total number of the probes, controlling each probe to move next time;
if the number of the probes of which the voltage is not within the preset range is more than 10% of the total number of the probes, stopping controlling to move the next time;
and checking each probe corresponding to each recorded number.
9. The wafer detection equipment comprises an electrical detection unit, a detection unit and a control unit, wherein the electrical detection unit is used for controlling a probe to be in contact with a bonding pad of a wafer and detecting the wafer through the electrical detection unit; characterized in that, the detection equipment of wafer still includes:
an initial position unit for determining an initial position of the probe, the probe being in contact with the pad at the initial position;
a moving unit for controlling the probe to move to a plurality of detection positions in a set direction;
the judging unit is used for controlling the electrical property detecting unit to detect the voltage of the probe when the probe is positioned at each detection position and judging whether the voltage is positioned in a preset range;
a limit determination unit configured to select, as a limit detection position in the setting direction, a detection position that is most deviated from the initial position in the setting direction, among the detection positions at which the voltage of the probe is within a preset range;
the range determining unit is used for determining a deviation range according to the deviation amount of the limit detection position relative to the initial position in the set direction, and the deviation amount is a vector;
and the detection unit is used for controlling the probe to move and controlling the electrical property detection unit to detect the wafer according to the offset range.
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