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CN110943150A - A kind of anti-hydrolysis LED chip and its making method - Google Patents

A kind of anti-hydrolysis LED chip and its making method Download PDF

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CN110943150A
CN110943150A CN201911334175.5A CN201911334175A CN110943150A CN 110943150 A CN110943150 A CN 110943150A CN 201911334175 A CN201911334175 A CN 201911334175A CN 110943150 A CN110943150 A CN 110943150A
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layer
sio
hydrolysis
substrate
led chip
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崔永进
邓梓阳
秦明惠
庄家铭
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Foshan Nationstar Semiconductor Co Ltd
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Foshan Nationstar Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes

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Abstract

本发明公开了一种抗水解LED芯片及其制作方法，所述芯片包括衬底、若干个发光结构、以及保护层，所述发光结构包括依次设于衬底上的N‑GaN层、有源层和P‑GaN层，还包裸露区域、ITO层、N电极和P电极，本发明的隔离槽沿着裸露区域刻蚀至衬底的表面，以便于保护层覆盖在发光结构的表面和侧壁，从而将发光结构的表面和侧壁全部保护起来，有效防止芯片发生水解。

Figure 201911334175

The invention discloses a hydrolysis-resistant LED chip and a manufacturing method thereof. The chip includes a substrate, a plurality of light-emitting structures, and a protective layer. The light-emitting structure includes an N-GaN layer, an active layer and the P-GaN layer, and also include the exposed area, the ITO layer, the N electrode and the P electrode. The isolation groove of the present invention is etched to the surface of the substrate along the exposed area, so that the protective layer covers the surface and sides of the light emitting structure. Therefore, the surface and side walls of the light-emitting structure are completely protected, and the hydrolysis of the chip is effectively prevented.

Figure 201911334175

Description

Anti-hydrolysis LED chip and manufacturing method thereof
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to an anti-hydrolysis chip and a manufacturing method thereof.
Background
Referring to fig. 1, the conventional LED chip includes a substrate 10, a light emitting structure including an N-GaN layer 21 disposed on the substrate 10, an active layer 22 and an N electrode 25 disposed on the N-GaN layer 21, a P-GaN layer 23 disposed on the active layer 22, an ITO layer 24 disposed on the P-GaN layer 23, and a P electrode 26 disposed on the ITO layer 24, and an insulating layer 30 covering a surface of the light emitting structure.
The existing LED chip does not etch the N-GaN layer to expose the substrate, and does not protect the side walls of the epitaxial layers (the N-GaN layer 21, the active layer 22 and the P-GaN layer 23), so that in the power-on use process of the LED chip, the N-GaN layer 21 on the side wall has poor air tightness due to packaging glue used for packaging, water vapor, impurities and other substances in the environment still enter and are attached to the side wall of the light-emitting structure, the side wall of the light-emitting structure can be hydrolyzed and corroded under the action of an electric field, and the LED chip fails.
Disclosure of Invention
The invention aims to provide an anti-hydrolysis chip which is simple in structure, effectively prevents hydrolysis and improves the reliability of the chip.
The invention also aims to provide a manufacturing method of the hydrolysis-resistant chip, which has a simple structure, effectively prevents hydrolysis and improves the reliability of the chip.
In order to solve the above technical problems, the present invention provides an anti-hydrolysis LED chip, which includes a substrate, a plurality of light emitting structures, and a protective layer,
the light-emitting structure comprises an N-GaN layer, an active layer and a P-GaN layer which are sequentially arranged on a substrate, and further comprises an exposed region, an ITO layer, an N electrode and a P electrode, wherein the exposed region is etched to the N-GaN layer along the P-GaN layer to expose the N-GaN layer, the electrode is arranged on the exposed N-GaN layer, the ITO layer is arranged on the P-GaN layer, the P electrode is arranged on the ITO layer,
the isolation trench is etched to the surface of the substrate along the exposed region to isolate the light emitting structures,
the protective layer is covered on the hairThe optical structure and the surface and the side wall of the isolation groove extend to the substrate, and the protective layer is made of Al with a plurality of periods2O3Layer and SiO2Layer composition of said Al2O3Layer as the bottom layer, the SiO2Layer is arranged on Al2O3On layers, each layer of Al2O3The thickness of the layer is less than that of SiO of each layer2The thickness of the layer.
As an improvement of the above scheme, each layer of Al2O3The thickness of each layer is SiO2The thickness of the layer is 30-50%.
As a modification of the above, the Al2O3The total thickness of the layers is 500-1000 angstroms, and the SiO layer2The total thickness of the layers is 1000 to 2000 angstroms.
As an improvement of the scheme, the structure of the protective layer is Al2O3/SiO2/Al2O3/SiO2The thickness of each layer was 300 angstroms, 600 angstroms, 500 angstroms, and 1500 angstroms in this order.
As an improvement of the scheme, the included angle between the light-emitting structure and the substrate is 30-70 degrees.
Correspondingly, the invention also provides a manufacturing method of the hydrolysis-resistant LED chip, which comprises the following steps:
forming an epitaxial layer on a substrate, wherein the epitaxial layer comprises an N-GaN layer, an active layer and a P-GaN layer which are sequentially arranged on the substrate;
etching the epitaxial layer until the N-GaN layer is formed, and forming an exposed area;
etching the exposed N-GaN layer to the surface of the substrate to form an isolation groove;
forming a transparent conductive layer on the second semiconductor layer;
forming an N electrode on the first semiconductor layer in the exposed area, and forming a P electrode on the transparent conductive layer;
forming a protective layer on the surfaces and the side walls of the light-emitting structure and the isolation groove;
the protective layer is composed of Al with a plurality of periods2O3Layer and SiO2Layer composition of said Al2O3Layer as the bottom layer, the SiO2Layer is arranged on Al2O3On layers, each layer of Al2O3The thickness of the layer is less than that of SiO of each layer2The thickness of the layer.
As an improvement of the above scheme, each layer of Al2O3The thickness of each layer is SiO2The thickness of the layer is 30-50%;
the Al is2O3The total thickness of the layers is 500-1000 angstroms, and the SiO layer2The total thickness of the layers is 1000 to 2000 angstroms.
As an improvement of the scheme, the included angle between the light-emitting structure and the substrate is 30-70 degrees.
As a modification of the above, the Al2O3The layer manufacturing method is as follows:
introducing nitrogen and trimethylaluminum by adopting an ALD machine, and depositing Al on the surfaces and the side walls of the light-emitting structure and the isolation groove under the conditions that the pressure is 0.08-0.15 Pa and the temperature is 130-170℃ to form Al2O3And (3) a layer.
As an improvement of the above, the SiO2The layer manufacturing method is as follows:
introducing silane and carbon monoxide into a PECVD machine under the conditions that the pressure is 0.08-0.15 Pa and the temperature is 230-280 ℃ and in Al2O3SiO is formed on the surface of the layer by deposition2And (3) a layer.
The implementation of the invention has the following beneficial effects:
the isolation groove is etched to the surface of the substrate along the exposed area, and the side wall of the light-emitting structure forms a certain inclination angle under the condition of not influencing the light-emitting efficiency of the chip, so that the protective layer can cover the surface and the side wall of the light-emitting structure, the surface and the side wall of the light-emitting structure are completely protected, and the chip is effectively prevented from being hydrolyzed.
Compared with the existing insulating layer, the protective layer of the invention adopts Al2O3And SiO2The high-density glass fiber has the characteristics of high transmittance, high compactness, high uniformity, high stability, non-conductivity and easiness in manufacturing, and is not permeable to water vapor; in the protection chipThe photoelectric performance of the chip is not influenced while the hydrolysis is prevented, and the stability of the chip is further improved.
Drawings
FIG. 1 is a schematic diagram of a conventional LED chip;
fig. 2 is a schematic structural diagram of an LED chip of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 2, the hydrolysis-resistant LED chip provided by the present invention includes a substrate 10, a plurality of light emitting structures, isolation grooves 30 between the light emitting structures, and a protective layer 40.
The light emitting structure comprises an N-GaN layer 21, an active layer 22 and a P-GaN layer 23 which are sequentially arranged on a substrate 10, and further comprises an exposed region 24, an ITO layer 25, an N electrode 26 and a P electrode 27, wherein the exposed region 24 is etched to the N-GaN layer 21 along the P-GaN layer 23 to expose the N-GaN layer 21, the N electrode 26 is arranged on the exposed N-GaN layer 21, the ITO layer 25 is arranged on the P-GaN layer 23, and the P electrode 27 is arranged on the ITO layer 25.
The isolation trenches 30 of the present invention are etched along the exposed regions to the surface of the substrate 10 to separate the light emitting structures.
The protective layer 40 of the present invention covers the surface and sidewalls of the light emitting structure and the isolation trench 30 and extends onto the substrate 10 to protect the chip. Specifically, the protective layer is composed of Al with a plurality of periods2O3Layer and SiO2And (3) layer composition. The protective layer of the invention adopts Al2O3And SiO2The prepared product has the performances of high transmittance, high compactness, high uniformity, high stability, no conductivity and easy manufacture, and is impermeable to water vapor.
Due to Al2O3The density of the layer is higher, the adhesive force is better, therefore the invention selects Al2O3A layer as bottom layer covering the surfaces and the side walls of the light-emitting structure and the isolation groove, the SiO2The layer is used as an outer layer and is covered with Al2O3On the layer. But do notDue to Al2O3The stress of the layer is greater, so Al2O3The thickness of the layer is less than SiO2The thickness of the layer. Preferably, each layer of Al2O3The thickness of each layer is SiO2The thickness of the layer is 30-50%.
In order to ensure that the protective layer can be attached to the surface and the side wall of the light-emitting structure and the isolation groove, and simultaneously prevent water vapor from permeating into the light-emitting structure, preferably, the Al is2O3The total thickness of the layers is 500-1000 angstroms, and the SiO layer2The total thickness of the layers is 1000 to 2000 angstroms.
Specifically, the structure of the protective layer is Al2O3/SiO2/Al2O3/SiO2The thickness of each layer was 300 angstroms, 600 angstroms, 500 angstroms, and 1500 angstroms in this order.
The included angle between the light-emitting structure and the substrate is 30-70 degrees. If the included angle is too small, in Al2O3The layer is difficult to deposit on the side walls of the light emitting structure, does not adhere well to the light emitting structure, and is easy to fall off in subsequent use.
Specifically, the included angle between the light-emitting structure and the substrate comprises the included angle between the epitaxial layer and the substrate and the included angle between the electrode and the substrate, and the electrode comprises an N electrode and a P electrode.
The protective layer covers the surface and the side wall of the light-emitting structure, namely the protective layer covers the exposed surface and the exposed side wall of the epitaxial layer, the ITO layer, the N electrode and the P electrode.
The isolation groove is etched to the surface of the substrate along the exposed area, and the side wall of the light-emitting structure forms a certain inclination angle under the condition of not influencing the light-emitting efficiency of the chip, so that the side wall of the light-emitting structure is covered by the protective layer, the side walls of the N-GaN layer, the active layer and the P-GaN layer are completely protected, and the chip is effectively prevented from being hydrolyzed.
Compared with the existing insulating layer, the protective layer of the invention adopts Al2O3And SiO2Has high transmittance, high compactness, high uniformity, high stability, non-conductivity and easy preparationIs characterized in that the coating is impermeable to water vapor; the chip is protected from hydrolysis, the photoelectric performance of the chip is not affected, and the stability of the chip is further improved.
Correspondingly, the invention also provides a manufacturing method of the hydrolysis-resistant LED chip, which comprises the following steps:
forming an epitaxial layer on a substrate, wherein the epitaxial layer comprises an N-GaN layer, an active layer and a P-GaN layer which are sequentially arranged on the substrate;
secondly, etching the epitaxial layer until the N-GaN layer is etched to form an exposed area;
specifically, the epitaxial layer is etched by adopting an ICP (inductively coupled plasma) etching process until the N-GaN layer is etched, and a bare region is formed.
Etching along the exposed N-GaN layer to the surface of the substrate to form an isolation groove;
specifically, an ICP etching process is adopted, etching is carried out along the exposed N-GaN layer, etching is carried out until the surface of the substrate is reached, and an isolation groove is formed.
Fourthly, forming a transparent conducting layer on the second semiconductor layer;
forming an N electrode on the first semiconductor layer of the exposed area, and forming a P electrode on the transparent conductive layer;
sixthly, forming a protective layer on the surfaces and the side walls of the light-emitting structure and the isolation groove;
the protective layer 40 covers the surface and sidewalls of the light emitting structure and the isolation groove 30 and extends to the substrate to protect the chip. Specifically, the protective layer protects Al from several periods2O3Layer and SiO2And (3) layer composition. The protective layer of the invention adopts Al2O3And SiO2And the prepared film has the performances of high transmittance, high compactness, high uniformity, high stability, no conductivity and easiness in manufacturing, and does not permeate water vapor.
Due to Al2O3The density of the layer is higher, the adhesive force is better, therefore the invention selects Al2O3The layer is used as a bottom layer and covers the surfaces and the side walls of the light-emitting structures and the isolation grooves. But due to Al2O3The stress of the layer is greater, so Al2O3The thickness of the layer is less than SiO2The thickness of the layer.
In order to ensure that the protective layer can be attached to the surface and the side wall of the light-emitting structure and the isolation groove, and simultaneously prevent water vapor from permeating into the light-emitting structure, preferably, the Al is2O3The total thickness of the layers is 500-1000 angstroms, and the SiO layer2The total thickness of the layers is 1000 to 2000 angstroms.
In addition, Al is2O3Layer and Al2O3The method of making the layer plays an important role in the performance of the protective layer. To form Al having high density and good adhesion2O3Layer of Al of the invention2O3The layer manufacturing method is as follows:
introducing nitrogen and trimethylaluminum by adopting an ALD machine, and depositing Al on the surfaces and the side walls of the light-emitting structure and the isolation groove under the conditions that the pressure is 0.08-0.15 Pa and the temperature is 130-170℃ to form Al2O3And (3) a layer.
The SiO2The layer manufacturing method is as follows:
introducing silane and carbon monoxide into a PECVD machine under the conditions that the pressure is 0.08-0.15 Pa and the temperature is 230-280 ℃ and in Al2O3SiO is formed on the surface of the layer by deposition2And (3) a layer.
The included angle between the light-emitting structure and the substrate is 30-70 degrees. If the included angle is too small, in Al2O3The layer is difficult to deposit on the side walls of the light emitting structure, does not adhere well to the light emitting structure, and is easy to fall off in subsequent use.
Specifically, the included angle between the light-emitting structure and the substrate comprises the included angle between the epitaxial layer and the substrate and the included angle between the electrode and the substrate, and the electrode comprises an N electrode and a P electrode.
The protective layer covers the surface and the side wall of the light-emitting structure, namely the protective layer covers the exposed surface and the exposed side wall of the epitaxial layer, the ITO layer, the N electrode and the P electrode.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (10)

1.一种抗水解LED芯片，其特征在于，包括衬底、若干个发光结构、以及保护层，1. an anti-hydrolysis LED chip, is characterized in that, comprises substrate, several light-emitting structures and protective layer, 所述发光结构包括依次设于衬底上的N-GaN层、有源层和P-GaN层，还包裸露区域、ITO层、N电极和P电极，所述裸露区域沿着P-GaN层刻蚀至N-GaN层，以将N-GaN层裸露出来，所述电极设置在裸露出来的N-GaN层上，所述ITO层设置在P-GaN层上，所述P电极设置在ITO层，The light-emitting structure includes an N-GaN layer, an active layer and a P-GaN layer sequentially arranged on a substrate, and also includes an exposed area, an ITO layer, an N electrode and a P electrode, and the exposed area is along the P-GaN layer. Etching to the N-GaN layer to expose the N-GaN layer, the electrode is arranged on the exposed N-GaN layer, the ITO layer is arranged on the P-GaN layer, and the P electrode is arranged on the ITO layer, 所述隔离槽沿着裸露区域刻蚀至衬底的表面，以将发光结构隔开，The isolation groove is etched to the surface of the substrate along the exposed area to separate the light emitting structure, 所述保护层覆盖在发光结构和隔离槽的表面和侧壁并延伸到衬底上，所述保护层由若干个周期的Al2O3层和SiO2层组成，所述Al2O3层作为底层，所述SiO2层设置在Al2O3层上，每层Al2O3层的厚度小于每层SiO2层的厚度。The protective layer covers the surface and sidewalls of the light emitting structure and the isolation trenches and extends to the substrate, the protective layer is composed of several cycles of Al 2 O 3 layers and SiO 2 layers, the Al 2 O 3 layers As the bottom layer, the SiO 2 layer is disposed on the Al 2 O 3 layer, and the thickness of each Al 2 O 3 layer is smaller than that of each SiO 2 layer. 2.如权利要求1所述的抗水解LED芯片，其特征在于，每层Al2O3层的厚度为每层SiO2层的厚度为30％～50％。2 . The hydrolysis-resistant LED chip according to claim 1 , wherein the thickness of each Al 2 O 3 layer is 30% to 50% of the thickness of each SiO 2 layer. 3 . 3.如权利要求2所述的抗水解LED芯片，其特征在于，所述Al2O3层的总厚度为500～1000埃，所述SiO2层的总厚度为1000～2000埃。3 . The hydrolysis-resistant LED chip according to claim 2 , wherein the total thickness of the Al 2 O 3 layer is 500-1000 angstroms, and the total thickness of the SiO 2 layer is 1000-2000 angstroms. 4 . 4.如权利要求3所述的抗水解LED芯片，其特征在于，所述保护层的结构为Al2O3/SiO2/Al2O3/SiO2，每层的厚度依次为300埃、600埃、500埃、1500埃。4 . The anti-hydrolysis LED chip of claim 3 , wherein the protective layer has a structure of Al 2 O 3 /SiO 2 /Al 2 O 3 /SiO 2 , and the thickness of each layer is 300 angstroms, 600 angstroms, 500 angstroms, 1500 angstroms. 5.如权利要求1所述的抗水解LED芯片，其特征在于，所述发光结构与衬底的夹角为30～70°。5 . The hydrolysis-resistant LED chip according to claim 1 , wherein the included angle between the light-emitting structure and the substrate is 30° to 70°. 6 . 6.一种抗水解LED芯片的制作方法，其特征在于，包括：6. A method for making an anti-hydrolysis LED chip, comprising: 在衬底上形成外延层，所述外延层包括依次设于衬底上的N-GaN层、有源层和P-GaN层；forming an epitaxial layer on the substrate, the epitaxial layer comprising an N-GaN layer, an active layer and a P-GaN layer sequentially arranged on the substrate; 对所述外延层进行刻蚀，刻蚀至N-GaN层，形成裸露区域；Etching the epitaxial layer to the N-GaN layer to form an exposed area; 沿着裸露出来的N-GaN层进行刻蚀，刻蚀至衬底的表面，形成隔离槽；Etching along the exposed N-GaN layer to the surface of the substrate to form an isolation trench; 在第二半导体层上形成透明导电层；forming a transparent conductive layer on the second semiconductor layer; 在裸露区域的第一半导体层上形成N电极，在透明导电层上形成P电极；forming an N electrode on the first semiconductor layer in the exposed area, and forming a P electrode on the transparent conductive layer; 在发光结构和隔离槽的表面和侧壁上形成保护层；forming a protective layer on the surface and sidewalls of the light emitting structure and the isolation trench; 所述保护层由若干个周期的Al2O3层和SiO2层组成，所述Al2O3层作为底层，所述SiO2层设置在Al2O3层上，每层Al2O3层的厚度小于每层SiO2层的厚度。The protective layer is composed of several periodic Al 2 O 3 layers and SiO 2 layers, the Al 2 O 3 layer is used as the bottom layer, the SiO 2 layer is arranged on the Al 2 O 3 layer, and each layer of Al 2 O 3 The thickness of the layers is less than the thickness of each SiO2 layer. 7.如权利要求6所述的抗水解LED芯片的制作方法，其特征在于，每层Al2O3层的厚度为每层SiO2层的厚度为30％～50％；7 . The method for manufacturing a hydrolysis-resistant LED chip according to claim 6 , wherein the thickness of each Al 2 O 3 layer is 30% to 50% of the thickness of each SiO 2 layer; 8 . 所述Al2O3层的总厚度为500～1000埃，所述SiO2层的总厚度为1000～2000埃。The total thickness of the Al 2 O 3 layer is 500-1000 angstroms, and the total thickness of the SiO 2 layer is 1000-2000 angstroms. 8.如权利要求6所述的抗水解LED芯片的制作方法，其特征在于，所述发光结构与衬底的夹角为30～70°。8 . The method for manufacturing a hydrolysis-resistant LED chip according to claim 6 , wherein the included angle between the light-emitting structure and the substrate is 30° to 70°. 9 . 9.如权利要求6所述的抗水解LED芯片的制作方法，其特征在于，所述Al2O3层的制作方法如下：9. The method for manufacturing a hydrolysis-resistant LED chip according to claim 6, wherein the method for manufacturing the Al 2 O 3 layer is as follows: 采用ALD机台，通入氮气和三甲基铝，在压力为0.08～0.15Pa，温度为130～170℃的条件下，在发光结构和隔离槽的表面和侧壁沉积形成Al2O3层。Using an ALD machine, feeding nitrogen and trimethyl aluminum, and under the conditions of a pressure of 0.08-0.15Pa and a temperature of 130-170°C, Al 2 O 3 layers were deposited on the surface and sidewalls of the light-emitting structure and the isolation groove. . 10.如权利要求9所述的抗水解LED芯片的制作方法，其特征在于，所述SiO2层的制作方法如下：10. The method for making a hydrolysis-resistant LED chip according to claim 9 , wherein the method for making the SiO layer is as follows: 采用PECVD机台，通入硅烷和一氧化碳，在压力为0.08～0.15Pa，温度为230～280℃的条件下，在Al2O3层表面沉积形成SiO2层。Using a PECVD machine, feeding silane and carbon monoxide, and under the conditions of a pressure of 0.08-0.15Pa and a temperature of 230-280°C, a SiO2 layer was deposited on the surface of the Al2O3 layer.
CN201911334175.5A 2019-12-23 2019-12-23 A kind of anti-hydrolysis LED chip and its making method Pending CN110943150A (en)

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