CN110699649A - Hydrogen absorption material for electronic packaging and preparation method thereof - Google Patents
Hydrogen absorption material for electronic packaging and preparation method thereof Download PDFInfo
- Publication number
- CN110699649A CN110699649A CN201911091717.0A CN201911091717A CN110699649A CN 110699649 A CN110699649 A CN 110699649A CN 201911091717 A CN201911091717 A CN 201911091717A CN 110699649 A CN110699649 A CN 110699649A
- Authority
- CN
- China
- Prior art keywords
- hydrogen
- substrate
- sputtering
- electronic packaging
- absorbing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
The invention discloses a hydrogen absorption material for electronic packaging and a preparation method thereof, mainly aiming at controlling the hydrogen content in a sealed electronic device and a component, the hydrogen absorption material comprises a Ti substrate playing a hydrogen storage role and a Pd membrane which is combined on the Ti substrate and plays a role in catalytic cracking and permeation; the preparation method comprises two processes of pretreatment of the hydrogen storage Ti matrix and magnetron sputtering of the Pd film layer. The invention can be applied to various sealed electronic devices and components, absorbs hydrogen in the sealed device components, thereby preventing the chips and the like in the sealed devices from losing efficacy caused by the influence of the hydrogen, and has high production efficiency and reliability without additionally carrying out dehydrogenation treatment on the packaging shell and the packaged components.
Description
Technical Field
The invention relates to a getter material for electronic packaging, in particular to a hydrogen getter material for electronic packaging and a preparation method thereof.
Background
The composition and content of the gas in the sealed electronic device assembly have great influence on the performance, service life and reliability of the device, and serious consequences such as reduction of the performance and service life of the electronic device assembly are easily caused. The failure caused by hydrogen is mainly shown as follows: (1) accelerating the corrosion of the electronic device; (2) the electronic components are oxidized, short-circuited and burned out to be invalid; (3) the GaAs chip is poisoned by hydrogen, and the functions of the chip and the device are seriously degraded. Therefore, tight control of the hydrogen content in the sealed electronic device package is essential.
The main sources of hydrogen content in the sealed electronic device component are a metal shell, an internal element, a wave-absorbing material and the like, and the specific expression is as follows: (1) the housing material itself introduces hydrogen during the manufacturing process; (2) annealing, sintering, and the like may be performed in a hydrogen atmosphere to introduce hydrogen; (3) hydrogen is also introduced during the metal can plating process; (4) the welding process of chips and the like can be carried out under the protection of hydrogen; (5) internal components such as tantalum capacitors, circulators, etc., contain hydrogen. The processes of introducing hydrogen cannot be completely avoided, hydrogen in the shell and each packaging element can be slowly released along with the use of the device, and the hydrogen cannot be released to the outside of the device assembly under the environment of the sealed shell, so that the hydrogen is accumulated in the sealed cavity, and the function failure of the device is easily caused. Measures are required to reduce the hydrogen content in the sealed electronic device package.
It is now common to perform a long bake-out under a nitrogen atmosphere before the device package is sealed, thereby eliminating hydrogen adsorbed in the encapsulation material. The long-term high-temperature baking has higher requirements on equipment on one hand, and also increases the production period; on the other hand, researchers find that after the gold-plated shell is baked for a long time at a high temperature, nickel at the bottom of the plating layer can diffuse to the surface of the top gold layer to be oxidized, and the weldability of the assembly process is reduced. Meanwhile, elements needing to be packaged such as a circulator, a tantalum capacitor and the like cannot be subjected to high-temperature baking dehydrogenation, and the hydrogen content of a sealed electronic device assembly is extremely easy to exceed standard and lose efficacy in the using process.
Disclosure of Invention
The invention aims to provide a hydrogen absorption material for electronic packaging and a preparation method thereof.
The technical solution for realizing the purpose of the invention is as follows: a hydrogen absorption material for electronic packaging comprises a hydrogen storage substrate and a Pd membrane which is combined on the surface of the hydrogen storage substrate and has the catalytic cracking permeation function, wherein the hydrogen storage substrate is a Ti substrate.
Furthermore, the Ti substrate is a Ti sheet with the thickness of 0.1-0.5 mm, and the purity is more than 99%.
Further, the Pd film has a thickness ofThe purity is more than 99.99%.
The invention also provides a preparation method of the hydrogen absorption material for electronic packaging, which comprises the following steps:
1) customizing a substrate: adopting pure titanium with the purity of more than 99% and a sheet with the thickness of 0.1-0.5 mm as a sputtering substrate;
2) carrying out pretreatment of oil removal, etching and roughening on the Ti matrix;
3) heating the substrate at a temperature ranging from 150 ℃ to 350 ℃;
4) argon partial pressure: the sputtering gas is argon, and the pressure is in the range of 0.01-1 Pa;
5) pre-sputtering: pre-sputtering before sputtering, and removing an oxide film on the surface of the target;
6) sputtering: the substrate can swing within the range of +/-15 degrees in the sputtering process, and the sputtering thickness is
Further, the specific process for removing the oil from the substrate comprises the following steps: alkaline ultrasonic degreasing and cleaning for 2-10 min, tap water cleaning for 1-3 min, and deionized water cleaning for 1-3 min.
Further, the specific process of etching and roughening is as follows: and (3) putting the cleaned titanium substrate into 100-800 ml/L hydrofluoric acid solution to clean for 1-4 min, removing oxides on the surface of the titanium substrate, etching and roughening the surface, cleaning for 1-3 min by using deionized water, and putting the titanium substrate into an oven to dry.
Further, before heating the substrate, vacuum is pumped, and the vacuum is controlled at 2X 10-4Pa or less.
Further, the sputtering gas was 99.999% high purity argon.
Further, the flow rate of the argon partial pressure gas was 30sccm, and the sputtering power was about 100W.
Further, the pre-sputtering time is 2-10 min.
Compared with the prior art, the invention has the following remarkable advantages: (1) the hydrogen absorption material can be applied to various sealed electronic device assemblies, and absorbs hydrogen in the sealed device assemblies, so that the chips and the like in the sealed device assemblies are prevented from being influenced by the hydrogen to cause failure; (2) the method has high production efficiency and high reliability, and the packaging shell and the packaged components do not need to be baked additionally; (3) the hydrogen absorption material for sealing the electronic device assembly designed by the invention has good hydrogen absorption capacity within the range of-65 ℃ to +250 ℃, the mass of the maximum absorbed hydrogen gas is about 1.8 percent of the mass of the hydrogen absorption material, and the phenomenon that the absorbed hydrogen is released again within the temperature range can not occur.
Drawings
Fig. 1 is a structural view of a hydrogen absorbing material in the present invention.
Fig. 2 is a hydrogen absorption schematic diagram of the hydrogen absorption material of the present invention.
FIG. 3 is a flow chart of the magnetron sputtering process of the present invention.
FIG. 4 is a structural view of an experimental Kovar housing according to the present invention.
Detailed Description
Ti and its alloys are useful as a hydrogen storage material for hydrogen absorption, but they can dissolve hydrogen at high temperatures of about 400 ℃ and cannot be used for hydrogen absorption for sealing electronic device components. Pd can absorb hydrogen and crack it into hydrogen atoms, which can freely pass through the atomic gaps, but this process is a reversible process, which can be performed bidirectionally at a lower temperature, and the absorbed hydrogen can be released, so it cannot be used alone for hydrogen absorption of sealed electronic device components.
The invention provides a hydrogen absorption material for electronic packaging and a preparation method thereof, which are suitable for controlling the hydrogen content in various sealed electronic devices and components.
As shown in fig. 1, the hydrogen absorbing material includes a Ti substrate that performs a hydrogen storage function and a Pd membrane that is bonded to the Ti substrate and performs a catalytic cracking permeation function.
The Ti substrate is a Ti sheet with the dimension specification of 0.1-0.5 mm and the purity is more than 99%. The thickness of the Pd film bonded on the surface of the Ti substrate is
The purity of Pd palladium is more than 99.99 percent.
The invention also provides a preparation method of the hydrogen absorption material for electronic packaging, which comprises two processes of pretreatment of the hydrogen storage Ti substrate and magnetron sputtering of the Pd film layer; pure Ti metal is used as a hydrogen storage substrate, and a Pd film is prepared on the substrate through magnetron sputtering and used as a catalytic layer. As shown in fig. 3, the specific preparation process is as follows:
1) customizing a substrate: adopting pure titanium with the purity of more than 99% and a sheet with the thickness of 0.1-0.5 mm as a sputtering substrate;
2) cleaning a substrate: firstly, alkaline ultrasonic degreasing and cleaning for 2-10 min, tap water cleaning for 1-3 min, and deionized water cleaning for 1-3 min;
3) surface etching: cleaning the degreased and cleaned titanium substrate in 100-800 ml/L hydrofluoric acid solution for 1-4 min to remove oxides on the surface of the titanium substrate, etching and roughening the surface, cleaning with deionized water for 1-3 min, and drying in an oven;
4) vacuumizing: the vacuum needs to be controlled at 2 x 10-4Pa below to ensure the purity of the film;
5) heating the substrate: in order to remove the moisture on the surface of the substrate and improve the binding force between the film and the substrate, the substrate needs to be heated, and the temperature range is 150-350 ℃;
6) argon partial pressure: the sputtering gas is high-purity argon gas with the purity of 99.999 percent, the pressure is within the range of 0.01-1 Pa, the gas flow is 30sccm, and the sputtering power is about 100W;
7) pre-sputtering: pure palladium with the purity of 99.99 percent is selected as the target material, and pre-sputtering is carried out for 2-10 min before sputtering so as to remove an oxide film on the surface of the target material and avoid influencing the film quality;
8) sputtering: the substrate can be within + -15 DEG during the sputtering processIn the range of (1) to ensure uniformity of the film, the sputtering thickness is
The hydrogen absorption material of the invention has good hydrogen absorption capacity within the range of-65 ℃ to +250 ℃, the mass of the maximum absorbed hydrogen gas is about 1.8 percent of the mass of the hydrogen absorption material, and the phenomenon that the absorbed hydrogen is released again within the temperature range can not occur. As shown in fig. 2, the hydrogen absorption principle of the present invention is as follows:
1) hydrogen molecules outside the film layer move to the surface of the hydrogen absorption material and are adsorbed on the surface of the Pd film;
2) since the 4d electron layer of Pd is in an electron-deficient state and can form an unstable chemical bond with hydrogen, hydrogen molecules are dissociated into two hydrogen atoms, and the process follows the Sieverts' law that n is 0.5;
3) along with the adsorption and desorption of hydrogen molecules on the Pd surface layer, the two sides of the Pd membrane layer have certain hydrogen concentration (hydrogen partial pressure) difference. The hydrogen atoms diffuse from the side where the hydrogen concentration is high to the side where the concentration is low (Ti substrate side), and this process follows Fick's law where n is 1;
4) hydrogen atoms penetrating through the interface of palladium and titanium permeate into the Ti matrix and are in solid solution with the Ti matrix.
The cracking energy of gaseous hydrogen molecules on the surface of the Ti substrate is higher, so that the titanium can absorb solid-solution hydrogen atoms under the condition of about 400 ℃. Through the dissociation effect of Pd on hydrogen molecules, hydrogen atoms can penetrate through a palladium-titanium interface to be dissolved and permeated into a titanium matrix at normal temperature.
According to the invention, pure Ti metal is used as a hydrogen storage substrate, a Pd film is prepared on the substrate through magnetron sputtering and used as a catalyst layer, and the prepared hydrogen absorption material can effectively eliminate hydrogen in sealed electronic devices and components, thereby preventing various failures caused by hydrogen poisoning.
The present invention will be described in detail with reference to examples.
Examples
A hydrogen absorption material for electronic packaging is shown in figure 1. Titanium sheets with the purity of more than 99 percent are used as sputtering substrates, and the thickness is 0.2 mm. The thickness of the sputtered palladium layer isThe preparation method is characterized in that the vacuum during sputtering is controlled to be 2 x 10-4Pa or less.
The thickness of the Ti substrate, the thickness of the Pd catalytic layer and the sputtering process parameters set by the invention are better parameters which are obtained after a plurality of experiments and comprehensively consider the efficiency and the effect, and the hydrogen in the atmosphere in the sealed electronic device component can be effectively absorbed.
The hydrogen absorption material of the invention is compared with the common hydrogen control method in the hydrogen removal effect. The Kovar packaging shell for the experiment is shown in figure 4, and high-temperature baking dehydrogenation treatment is not carried out on a No. 1 shell sample before and after gold plating. The 2# shell sample is subjected to hydrogen removal treatment before plating by using a common high-temperature baking hydrogen control method, is subjected to hydrogen removal treatment after gold plating and is baked for 48 hours at 250 ℃ in a nitrogen atmosphere, and then is capped. The 3# shell sample uses the hydrogen-absorbing material of the invention, and the hydrogen-removing treatment is not carried out before and after the shell is plated with gold, and the hydrogen-absorbing material is placed in the gold-plated shell and then capped. After the three samples are all subjected to high-temperature storage excitation for 48 hours in an oven at 250 ℃ after being capped, the internal atmosphere of the tube shell is detected according to the GJB548B-2005 method 1018.1. The 4# and 5# shell samples are not subjected to high-temperature baking dehydrogenation treatment before and after gold plating, wherein the cavity A is not filled with hydrogen absorption materials, the cavity B is filled with hydrogen absorption materials, and after the caps are sealed, high-temperature storage excitation is carried out for 1000 hours in a drying oven at 100 ℃, and the internal atmosphere of the tube shell is detected.
TABLE 1 detection of atmosphere content after hydrogen control of Kovar casing by different methods (250 deg.C, 48h excitation)
The results of the internal atmosphere test are shown in tables 1 and 2, and the sample No. 1 is the test result of the atmosphere of the shell which is not subjected to dehydrogenation treatment, and the hydrogen content is more than 5%; the 2# sample is an atmosphere detection result of the shell after the high-temperature baking hydrogen control method, and the hydrogen content is about 1.6%; the sample No. 3 is the atmosphere detection result of the hydrogen absorption material of the shell which is not subjected to dehydrogenation treatment by using the method of the invention, and the hydrogen content is less than 100 ppm. No hydrogen absorption materials are placed in the cavities of No. 4 and No. 5A, and the hydrogen content is close to 4%; the 4# and 5# B cavities are provided with hydrogen-absorbing materials, and the hydrogen content is not detected.
TABLE 2 Kovar casing atmosphere content test results (100 ℃, 1000h excitation)
Through comparison, the hydrogen control effect of the hydrogen absorption material prepared by the method is far better than that of the common hydrogen control method.
Claims (10)
1. A hydrogen absorption material for electronic packaging is characterized by comprising a hydrogen storage substrate and a Pd membrane which is combined on the surface of the hydrogen storage substrate and plays a role in catalytic cracking and permeation, wherein the hydrogen storage substrate is a Ti substrate.
2. The hydrogen absorbing material for electronic packaging as claimed in claim 1, wherein the Ti matrix is a Ti sheet with a thickness of 0.1-0.5 mm and a purity of more than 99%.
3. The hydrogen absorbing material for electronic package according to claim 1, wherein the Pd film has a thickness of 10 ℃ C
The purity is more than 99.99%.
4. A preparation method of a hydrogen absorption material for electronic packaging is characterized by comprising the following steps:
1) customizing a substrate: adopting pure titanium with the purity of more than 99% and a sheet with the thickness of 0.1-0.5 mm as a sputtering substrate;
2) carrying out pretreatment of oil removal, etching and roughening on the Ti matrix;
3) heating the substrate at a temperature ranging from 150 ℃ to 350 ℃;
4) argon partial pressure: the sputtering gas is argon, and the pressure is in the range of 0.01-1 Pa;
5) pre-sputtering: pre-sputtering before sputtering, and removing an oxide film on the surface of the target;
6) sputtering: the substrate can swing within the range of +/-15 degrees in the sputtering process, and the sputtering thickness is
5. The method for preparing a hydrogen absorbing material for electronic packaging according to claim 4, wherein the substrate is degreased by a specific process comprising: alkaline ultrasonic degreasing and cleaning for 2-10 min, tap water cleaning for 1-3 min, and deionized water cleaning for 1-3 min.
6. The method for preparing a hydrogen absorbing material for electronic packaging according to claim 4, wherein the specific processes of etching and roughening are as follows: and (3) putting the cleaned titanium substrate into 100-800 ml/L hydrofluoric acid solution to clean for 1-4 min, removing oxides on the surface of the titanium substrate, etching and roughening the surface, cleaning for 1-3 min by using deionized water, and putting the titanium substrate into an oven to dry.
7. The method of claim 4, wherein the substrate is evacuated before heating, and the vacuum is controlled to 2 x 10-4Pa or less.
8. The method for preparing a hydrogen absorbing material for electronic packaging as claimed in claim 4, wherein the sputtering gas is argon gas of 99.999% purity.
9. The method of claim 4, wherein the partial pressure of argon gas is at a gas flow rate of 30sccm and the sputtering power is about 100W.
10. The method for preparing a hydrogen absorbing material for electronic packaging as claimed in claim 4, wherein the pre-sputtering time is 2-10 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911091717.0A CN110699649A (en) | 2019-11-10 | 2019-11-10 | Hydrogen absorption material for electronic packaging and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911091717.0A CN110699649A (en) | 2019-11-10 | 2019-11-10 | Hydrogen absorption material for electronic packaging and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110699649A true CN110699649A (en) | 2020-01-17 |
Family
ID=69205536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911091717.0A Pending CN110699649A (en) | 2019-11-10 | 2019-11-10 | Hydrogen absorption material for electronic packaging and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110699649A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110808A (en) * | 1998-12-04 | 2000-08-29 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
| CN1305023A (en) * | 2000-10-19 | 2001-07-25 | 太原理工大学 | Plasma surface-alloying process for titanium alloy |
| US6423575B1 (en) * | 2001-07-27 | 2002-07-23 | Dean Tran | Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication |
| US20030062610A1 (en) * | 2001-09-28 | 2003-04-03 | Kovacs Alan L. | Multilayer thin film hydrogen getter |
| CN101163586A (en) * | 2005-02-17 | 2008-04-16 | 泽斯吸气剂公司 | Flexible multi-layered getter |
| CN103668070A (en) * | 2013-12-05 | 2014-03-26 | 中盈长江国际新能源投资有限公司 | Magnesium-base hydrogen storage film and preparation method thereof |
| CN104069741A (en) * | 2014-07-07 | 2014-10-01 | 兰州理工大学 | Defect repair method applied in preparation of hydrogen-permeating palladium composite membrane |
| CN104342617A (en) * | 2013-07-25 | 2015-02-11 | 北京大学 | High-capacity hydrogen storage film and preparation method thereof |
| CN108149211A (en) * | 2017-12-29 | 2018-06-12 | 华南理工大学 | A kind of Mg-TM surpasses MULTILAYER COMPOSITE hydrogen storage film and preparation method thereof |
| CN109440074A (en) * | 2018-12-06 | 2019-03-08 | 电子科技大学 | A kind of quick-fried film bridge of hydrogen and preparation method thereof of high-energy output |
| CN109536908A (en) * | 2018-12-28 | 2019-03-29 | 有研工程技术研究院有限公司 | A kind of Pd/Zr-Co-Ce/Ti film getter and its preparation |
-
2019
- 2019-11-10 CN CN201911091717.0A patent/CN110699649A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110808A (en) * | 1998-12-04 | 2000-08-29 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
| US6369442B1 (en) * | 1998-12-04 | 2002-04-09 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
| US20020063323A1 (en) * | 1998-12-04 | 2002-05-30 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
| CN1305023A (en) * | 2000-10-19 | 2001-07-25 | 太原理工大学 | Plasma surface-alloying process for titanium alloy |
| US6423575B1 (en) * | 2001-07-27 | 2002-07-23 | Dean Tran | Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication |
| US20030062610A1 (en) * | 2001-09-28 | 2003-04-03 | Kovacs Alan L. | Multilayer thin film hydrogen getter |
| CN101163586A (en) * | 2005-02-17 | 2008-04-16 | 泽斯吸气剂公司 | Flexible multi-layered getter |
| CN104342617A (en) * | 2013-07-25 | 2015-02-11 | 北京大学 | High-capacity hydrogen storage film and preparation method thereof |
| CN103668070A (en) * | 2013-12-05 | 2014-03-26 | 中盈长江国际新能源投资有限公司 | Magnesium-base hydrogen storage film and preparation method thereof |
| CN104069741A (en) * | 2014-07-07 | 2014-10-01 | 兰州理工大学 | Defect repair method applied in preparation of hydrogen-permeating palladium composite membrane |
| CN108149211A (en) * | 2017-12-29 | 2018-06-12 | 华南理工大学 | A kind of Mg-TM surpasses MULTILAYER COMPOSITE hydrogen storage film and preparation method thereof |
| CN109440074A (en) * | 2018-12-06 | 2019-03-08 | 电子科技大学 | A kind of quick-fried film bridge of hydrogen and preparation method thereof of high-energy output |
| CN109536908A (en) * | 2018-12-28 | 2019-03-29 | 有研工程技术研究院有限公司 | A kind of Pd/Zr-Co-Ce/Ti film getter and its preparation |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI386317B (en) | Flexible multi-layered getter | |
| TW586135B (en) | Composite materials capable of hydrogen sorption independently from activating treatments and methods for the production thereof | |
| TWI293335B (en) | Non-evaporable getter multilayer deposits obtained by cathodic deposition and process for their manufacturing | |
| CN103849835A (en) | Zr-Co-Re thin film getter provided with protection layer, and preparation method thereof | |
| CN109396631B (en) | A hot isostatic pressing diffusion bonding method of tungsten/transition layer/stainless steel | |
| US8363384B2 (en) | Metal getter systems | |
| JP5780407B2 (en) | Thin layer structure (THIN-LAYEREDSTRUCTURE) | |
| CN107098603B (en) | Activation method of built-in getter of vacuum glass | |
| CN103801252A (en) | Degassing agent with protective layer as well as preparation method thereof | |
| EP2774166B1 (en) | Improved composite getters | |
| CN110699649A (en) | Hydrogen absorption material for electronic packaging and preparation method thereof | |
| CN110777369A (en) | Active packaging hydrogen absorption material and preparation method thereof | |
| CN104871284A (en) | Non-evaporable getter alloys reactivable after exposure to reactive gases | |
| CN114520198B (en) | Hydrogen absorption device for hydrogen sensitive hybrid integrated circuit and preparation method thereof | |
| CN109267126B (en) | Titanium alloy packaging shell and manufacturing method thereof | |
| CN110863174A (en) | Titanium-based hydrogen absorption material without activation and preparation method thereof | |
| Manini et al. | NEG pumps: Sorption mechanisms and applications | |
| CN100451171C (en) | Surface treatment for improving metal welding performance and work pieces therefrom | |
| CN114749144A (en) | Renewable composite getter for maintaining high vacuum environment and manufacturing method thereof | |
| Wu et al. | Multilayer thin film getter for sustainable vacuum in MEMS packaging | |
| CN1772473A (en) | Thin-film gas-absorbing element of multilayer film structure and methods of making and using same | |
| JPS5912332B2 (en) | Hydrogen exhaust method and exhaust device | |
| WO2022195734A1 (en) | Material for capturing gas and kit for manufacturing vacuum insulation member | |
| CN113877590B (en) | Ultraviolet light activated getter and preparation method thereof | |
| CN221759514U (en) | Thin film getter structure for improving gettering efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200117 |
|
| RJ01 | Rejection of invention patent application after publication |