CN109440074A - A kind of quick-fried film bridge of hydrogen and preparation method thereof of high-energy output - Google Patents
A kind of quick-fried film bridge of hydrogen and preparation method thereof of high-energy output Download PDFInfo
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- CN109440074A CN109440074A CN201811485665.0A CN201811485665A CN109440074A CN 109440074 A CN109440074 A CN 109440074A CN 201811485665 A CN201811485665 A CN 201811485665A CN 109440074 A CN109440074 A CN 109440074A
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- hydrogen storage
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 124
- 239000001257 hydrogen Substances 0.000 title claims abstract description 121
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 121
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 238000005984 hydrogenation reaction Methods 0.000 title claims abstract description 10
- 238000003860 storage Methods 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000011241 protective layer Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 124
- 239000007789 gas Substances 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 23
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 229910020068 MgAl Inorganic materials 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 238000001179 sorption measurement Methods 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 239000011888 foil Substances 0.000 abstract description 16
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 238000004880 explosion Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 8
- 238000005474 detonation Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 6
- 230000009471 action Effects 0.000 abstract description 4
- 230000000977 initiatory effect Effects 0.000 abstract description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 3
- 230000037452 priming Effects 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000002360 explosive Substances 0.000 description 5
- 230000009466 transformation Effects 0.000 description 3
- 239000001996 bearing alloy Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241001155433 Centrarchus macropterus Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 210000000038 chest Anatomy 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000003721 gunpowder Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/0005—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
- C01B3/001—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/0005—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
- C01B3/001—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
- C01B3/0084—Solid storage mediums characterised by their shape, e.g. pellets, sintered shaped bodies, sheets, porous compacts, spongy metals, hollow particles, solids with cavities, layered solids
-
- C—CHEMISTRY; METALLURGY
- C06—EXPLOSIVES; MATCHES
- C06C—DETONATING OR PRIMING DEVICES; FUSES; CHEMICAL LIGHTERS; PYROPHORIC COMPOSITIONS
- C06C7/00—Non-electric detonators; Blasting caps; Primers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/32—Hydrogen storage
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Combustion & Propulsion (AREA)
- Hydrogen, Water And Hydrids (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
The present invention provides a kind of quick-fried film bridges of hydrogen and preparation method thereof of high-energy output, belong to priming system technical field.The quick-fried film bridge of hydrogen is followed successively by substrate, bridge zone film layer and protective layer from bottom to top, and the bridge zone film layer is hydrogen storage film.The present invention selects film bridge material of the hydrogen storage film as Slapper detonator, which occurs plasma explosion under the effect of the outside energies such as electric energy, pulsed laser energy, simultaneously because containing a large amount of hydrogen in film bridge, it is quick-fried that also hydrogen can occur for hydrogen storage film itself；Therefore, plasma explosion can occur simultaneously under the action of the outside energies such as electric energy, pulsed laser energy for the hydrogen storage film and hydrogen is quick-fried, greatly improve the unit energy output and energy conversion efficiency of the process, the reliability and stability of Exploding Foil are improved, and effectively reduce initiation energy and detonation voltage.
Description
Technical field
The invention belongs to priming system technical fields, are related to a kind of Slapper detonator Exploding Foil, and in particular to a kind of high energy
Measure the quick-fried film bridge of hydrogen and preparation method thereof of output.
Background technique
Slapper detonator as the crucial inverting element in all kinds of ignition and detonation devices, be widely used in Aeronautics and Astronautics,
The dual-use field such as MISSILE LAUNCHING, mine blasting.Traditional Slapper detonator mainly includes Exploding Foil, film flying, accelerates thorax
And explosive column etc., as shown in Figure 1.Wherein, Exploding Foil is played in blast process by excitation energy (electric energy, pulse laser, punching
Hit wave etc.) effect that is converted to film flying kinetic energy is the key element of Slapper detonator, its working principle is that explosion foil material is swashing
It encourages and is undergone phase transition under energy effect, be plasma state by Solid State Transformation, the plasma that phase transformation generates is sheared and accelerates film flying material
Material, so that film flying realizes the ignition and detonation function of Slapper detonator with high speed impacts gunpowder.
Currently, Exploding Foil generallys use Ni metal as bridge zone thin-film material, which easily occurs under high electric field effect
Electric detonation generates plasma, but single copper explosive bridge the problems such as that there are energy conversion rates is lower, energy output is not high.For this purpose,
Researchers at home and abroad are attempted to integrate the reactive multilayer film containing energy, such as Al/Ni, Al/CuO, B/Ti in Cu Exploding Foil, utilize
The chemical energy discharged in the film reaction process containing energy realizes that electric energy and chemical energy combine the energy density for improving explosive bridge,
Enhance the energy output of Exploding Foil.But this method often exist initiation energy it is higher, containing can film reaction rate and explosion
The problems such as ionization process of foil mismatches causes the energy conversion efficiency of explosive bridge to improve ability limited.Therefore, design preparation
Novel film bridge material and structure improve the energy conversion efficiency of Slapper detonator, are the themes of Slapper detonator invariability.
Summary of the invention
In view of the defects in the background art, the present invention proposes a kind of high-energy output the quick-fried film bridge (Exploding Foil) of hydrogen and
Preparation method.The present invention selects film bridge material of the hydrogen storage film as Slapper detonator, which swashs in electric energy, pulse
The effect of the outside energies such as light energy is lower to occur plasma explosion, simultaneously because containing a large amount of hydrogen, hydrogen storage film itself in film bridge
It is quick-fried hydrogen to occur；Therefore, the hydrogen storage film can occur simultaneously under the action of the outside energies such as electric energy, pulsed laser energy etc. from
Son explosion and hydrogen are quick-fried, greatly improve the unit energy output and energy conversion efficiency of the process.
Technical scheme is as follows:
A kind of quick-fried film bridge of hydrogen of high-energy output, which is characterized in that the quick-fried film bridge of hydrogen is followed successively by substrate, bridge from bottom to top
Area's film layer and protective layer, the bridge zone film layer are hydrogen storage film.
Further, the hydrogen storage film is Ti system alloy firm (Ti/Mo, Ti/Fe, Ti/Ni etc.), Mg system alloy firm
The hydrogen bearing alloys film such as (Mg/Al, Mg/Ni, Mg/Pd etc.) or Zr system alloy firm (Zr/Co, Zr etc.).
Further, the substrate is ceramic bases, silicon base or substrate of glass etc.；The protective layer material be Ta,
The metal materials such as Mo or Cr.
Further, the hydrogen storage film with a thickness of 0.1~5 μm, the protective layer with a thickness of 0.01~5 μm.
A kind of preparation method of the quick-fried film bridge of hydrogen of high-energy output, comprising the following steps:
Step 1 forms hydrogen storage film using magnetron sputtering method on substrate；
Step 2 forms protective layer in the hydrogen storage film that step 1 obtains using magnetron sputtering method；
Step 3, the substrate with hydrogen storage film and protective layer for obtaining step 2 are placed in gas absorption instrument, are vacuumized
To 5 × 10-4Pa is hereinafter, then heating substrate is to 20~1000 DEG C；Hydrogen is passed through into adsorption instrument again, until gas atmosphere reaches
0.5KPa~5MPa keeps 0.5~100h under conditions of temperature is 20~1000 DEG C, hydrogen gas pressure is 0.5KPa~5MPa,
So that hydrogen storage film absorbs hydrogen；Complete the preparation of the quick-fried film bridge of the hydrogen.
Further, the purity of hydrogen described in step 3 is not less than 99.99% with volume percentage.
The present invention also provides a kind of preparation methods of the quick-fried film bridge of hydrogen of high-energy output, choose the conduct of MgAl alloy firm
Hydrogen storage film material, Ta prevent Mg from aoxidizing as protective layer material, specifically includes the following steps:
Step 1, cleaning substrate: substrate is successively cleaned by ultrasonic in acetone, ethyl alcohol and deionized water, is dried, for use；
Step 2, the deposition on substrate MgAl film cleaned up using magnetron sputtering method in step 1 are as hydrogen storage film；
Wherein, sputtering pressure is 0.3~0.6Pa, and sputtering power is 40~200W, and sputter gas is the inert gases such as argon gas, when sputtering
Between be 40~120min, obtained MgAl film with a thickness of 0.1~5 μm；
Step 3 deposits one layer of Ta film using magnetron sputtering method in the hydrogen storage film that step 2 obtains, as protective layer；
Wherein, sputtering pressure is 0.3~0.6Pa, and sputtering power is 40~200W, and sputter gas is the inert gases such as argon gas, when sputtering
Between be 40~120min, obtained Ta film with a thickness of 0.01~5 μm；
Step 4 is taken out what step 3 obtained with the substrate of hydrogen storage film and protective layer, successively in acetone and deionized water
Middle cleaning, drying；
Step 5, the hydrogenation reaction of hydrogen storage film: the sample after step 4 drying is placed in gas absorption instrument, is vacuumized
To 5 × 10-4Pa is hereinafter, then heating substrate is to 20~1000 DEG C；Hydrogen is passed through into adsorption instrument again, until gas atmosphere reaches
0.5KPa~5MPa keeps 0.5~100h under conditions of temperature is 20~1000 DEG C, hydrogen gas pressure is 0.5KPa~5MPa,
So that hydrogen storage film absorbs hydrogen；Complete the preparation of the quick-fried film bridge of the hydrogen.
Further, the purity of hydrogen described in step 5 is not less than 99.99% with volume percentage.
Compared with prior art, the invention has the benefit that
The present invention provides a kind of quick-fried film bridges of hydrogen and preparation method thereof of high-energy output, select hydrogen storage film as impact
Plasma explosion occurs under the effect of the outside energies such as electric energy, pulsed laser energy for the film bridge material of piece detonator, the hydrogen storage film,
Simultaneously because containing a large amount of hydrogen in film bridge, it is quick-fried that also hydrogen can occur for hydrogen storage film itself；Therefore, the hydrogen storage film is in electric energy, pulse
Plasma explosion can occur under the action of the outside energies such as laser energy simultaneously and hydrogen is quick-fried, greatly improve the unit of the process
Energy output and energy conversion efficiency, improve the reliability and stability of Exploding Foil, and effectively reduce initiation energy and rise
Quick-fried voltage.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of traditional Slapper detonator；
Fig. 2 is the structural schematic diagram of the quick-fried film bridge of hydrogen provided by the invention；Wherein, 1 is substrate, and 2 be hydrogen storage film layer, and 3 are
Protective layer.
Specific embodiment
With reference to the accompanying drawings and examples, technical solution of the present invention is described in detail.
A kind of quick-fried film bridge of hydrogen of high-energy output, which is characterized in that the quick-fried film bridge of hydrogen is followed successively by substrate, bridge from bottom to top
Area's film layer and protective layer, the bridge zone film layer are hydrogen storage film；The hydrogen storage film be Ti system alloy firm (Ti/Mo,
Ti/Fe, Ti/Ni etc.), Mg system alloy firm (Mg/Al, Mg/Ni, Mg/Pd etc.) or Zr system alloy firm (Zr/Co, Zr etc.)
Equal hydrogen bearing alloys film.
The present invention also provides a kind of preparation methods of the quick-fried film bridge of hydrogen of high-energy output, choose the conduct of MgAl alloy firm
Hydrogen storage film material, Ta prevent Mg from aoxidizing as protective layer material, specifically includes the following steps:
Step 1, cleaning substrate: 3 inches of Al is chosen2O3Ceramic substrate as substrate, successively acetone, ethyl alcohol and go from
It is cleaned by ultrasonic 15min in sub- water, dries, for use；
Step 2 forms photoresist exposure mask using photoetching technique on the substrate that step 1 cleans up, and then uses magnetic control
Sputtering method deposits MgAl film as hydrogen storage film；Wherein, sputtering pressure is 0.3~0.6Pa, and sputtering power is 40~200W,
Sputter gas is argon gas, and sputtering time is 40~120min, obtained MgAl film with a thickness of 0.1~5 μm；
Step 3 deposits one layer of Ta film using magnetron sputtering method in the hydrogen storage film that step 2 obtains, as protective layer；
Wherein, sputtering pressure is 0.3~0.6Pa, and sputtering power is 40~200W, and sputter gas is argon gas, sputtering time is 40~
120min, obtained Ta film with a thickness of 0.01~5 μm；
Step 4 is taken out what step 3 obtained with the substrate of hydrogen storage film and protective layer, is impregnated in acetone to remove base
The photoresist of on piece and the film being adhered on photoresist, then rinsed well using deionized water, it dries；
Step 5, the hydrogenation reaction of hydrogen storage film: the sample after step 4 drying is placed in gas absorption instrument, is vacuumized
To 5 × 10-4Pa is hereinafter, then heating substrate is to 20~1000 DEG C；Hydrogen is passed through into adsorption instrument again, until gas atmosphere reaches
0.5KPa~5MPa keeps 0.5~100h under conditions of temperature is 20~1000 DEG C, hydrogen gas pressure is 0.5KPa~5MPa,
So that hydrogen storage film absorbs hydrogen；Complete the preparation of the quick-fried film bridge of the hydrogen.
Further, the purity of the argon gas in step 2 and step 3 is not less than 99.99% with volume percentage.
Embodiment 1
The preparation method for present embodiments providing a kind of quick-fried film bridge of hydrogen of high-energy output, chooses the conduct of MgAl alloy firm
Hydrogen storage film material, Ta prevent Mg from aoxidizing as protective layer material, specifically includes the following steps:
Step 1, cleaning substrate: the Al that diameter is 3 inches is chosen2O3Ceramic substrate is as substrate, successively in acetone, ethyl alcohol
Be cleaned by ultrasonic 15min in deionized water, dry, for use；
Step 2 coats one layer of PR1-4000A type photoresist in the substrate surface that step 1 cleans up using photoresist spinner, adopts
A layer photoresist exposure mask is formed in substrate surface with photoetching technique, then using magnetron sputtering method deposition MgAl film as hydrogen storage
Film；Wherein, sputtering pressure 0.6Pa, sputtering power 100W, sputter gas are argon gas, the thickness of obtained MgAl film
It is 2 μm；
Step 3 deposits one layer of Ta film using magnetron sputtering method on the MgAl film that step 2 obtains, as protective layer；
Wherein, sputtering pressure 0.45Pa, sputtering power 40W, sputter gas are argon gas, obtained Ta film with a thickness of 20nm；
Step 4 is taken out what step 3 obtained with the substrate of hydrogen storage film and protective layer, is impregnated in acetone to remove base
The photoresist of on piece and the film being adhered on photoresist, then rinsed well using deionized water, it dries；
Step 5, the hydrogenation reaction of hydrogen storage film: it is high that the sample after step 4 drying is placed in 3H-2000PH1 type high temperature
It calms the anger in body adsorption instrument, is evacuated to 5 × 10-4Pa is hereinafter, then heating substrate is to 300 DEG C；Hydrogen is passed through into adsorption instrument again,
Until gas atmosphere reaches 2MPa, under conditions of temperature is 300 DEG C, hydrogen gas pressure is 2MPa, 3h is kept, so that hydrogen storage film
Absorb hydrogen；Complete the preparation of the quick-fried film bridge of the hydrogen.
Embodiment 2
Compared with Example 1, difference is the present embodiment, the process of step 5 are as follows: places the sample after step 4 drying
In 3H-2000PH1 type high temperature and high pressure gas adsorption instrument, it is evacuated to 5 × 10-4Pa is hereinafter, then heating substrate is to 600 DEG C；
Hydrogen is passed through into adsorption instrument again, until gas atmosphere reaches 0.5KPa, temperature is 600 DEG C, hydrogen gas pressure is 0.5KPa's
Under the conditions of, 20h is kept, so that hydrogen storage film absorbs hydrogen.Remaining step is same as Example 1.
Embodiment 3
Compared with Example 1, difference is the present embodiment, the process of step 5 are as follows: places the sample after step 4 drying
In 3H-2000PH1 type high temperature and high pressure gas adsorption instrument, it is evacuated to 5 × 10-4Pa is hereinafter, then heating substrate is to 900 DEG C；
Hydrogen is passed through into adsorption instrument again, until gas atmosphere reaches 3MPa, in the condition that temperature is 900 DEG C, hydrogen gas pressure is 3MPa
Under, 80h is kept, so that hydrogen storage film absorbs hydrogen；Complete the preparation of the quick-fried film bridge of the hydrogen.Remaining step is same as Example 1.
It, can be with energy dissipation and heat biography during explosive reaction generation plasma occurs for traditional metal film bridge
Phenomena such as passing, most energy (electric energy, laser, shock wave etc.) are not converted to the kinetic energy of film flying, but with thermal energy or
The forms such as luminous energy consume.Compared with existing explosion foil material, the quick-fried film bridge of hydrogen proposed by the present invention is in Exploding Foil mechanism
In, the transformation that physical aspect occurs for hydrogen storage film layer generates plasma, while the hydrogen of hydrogen storage film layer release and air are sent out
The raw quick-fried reaction of hydrogen enhances the energy output of Exploding Foil under the collective effect of the two, improves the energy conversion effect of Exploding Foil
Rate.Therefore, the quick-fried film bridge of hydrogen of the present invention under the action of excitation energy, release by the hydrogen simultaneous reactions of hydrogen storage film layer and its storage
Huge energy is released, collective effect is in flier plate material, so that film flying has higher kinetic energy, to improve Exploding Foil detonation
The reliability and stability of system, and its initiation energy and detonation voltage is effectively reduced.
Claims (7)
1. a kind of quick-fried film bridge of hydrogen of high-energy output, which is characterized in that the quick-fried film bridge of hydrogen is followed successively by substrate, bridge zone from bottom to top
Film layer and protective layer, the bridge zone film layer are hydrogen storage film.
2. the quick-fried film bridge of hydrogen of high-energy output according to claim 1, which is characterized in that the hydrogen storage film is the conjunction of Ti system
Gold thin film, Mg system alloy firm or Zr system alloy firm.
3. the quick-fried film bridge of hydrogen of high-energy according to claim 1 output, which is characterized in that the hydrogen storage film be Ti/Mo,
Ti/Fe, Ti/Ni, Mg/Al, Mg/Ni, Mg/Pd, Zr/Co or Zr.
4. the quick-fried film bridge of hydrogen of high-energy according to claim 1 output, which is characterized in that the substrate be ceramic bases,
Silicon base or substrate of glass；The protective layer material is Ta, Mo or Cr.
5. the quick-fried film bridge of hydrogen of high-energy according to claim 1 output, which is characterized in that the hydrogen storage film with a thickness of
0.1~5 μm, the protective layer with a thickness of 0.01~5 μm.
6. a kind of preparation method of the quick-fried film bridge of hydrogen of high-energy output, comprising the following steps:
Step 1 forms hydrogen storage film using magnetron sputtering method on substrate；
Step 2 forms protective layer in the hydrogen storage film that step 1 obtains using magnetron sputtering method；
Step 3, the substrate with hydrogen storage film and protective layer for obtaining step 2 are placed in gas absorption instrument, it is evacuated to 5 ×
10-4Pa is hereinafter, then heating substrate is to 20~1000 DEG C；Hydrogen is passed through into adsorption instrument again, until gas atmosphere reaches
0.5KPa~5MPa keeps 0.5~100h under conditions of temperature is 20~1000 DEG C, hydrogen gas pressure is 0.5KPa~5MPa,
So that hydrogen storage film absorbs hydrogen；Complete the preparation of the quick-fried film bridge of the hydrogen.
7. a kind of preparation method of the quick-fried film bridge of hydrogen of high-energy output, specifically includes the following steps:
Step 1, cleaning substrate: substrate is successively cleaned by ultrasonic in acetone, ethyl alcohol and deionized water, is dried, for use；
Step 2, the deposition on substrate MgAl film cleaned up using magnetron sputtering method in step 1 are as hydrogen storage film；Wherein,
Sputtering pressure is 0.3~0.6Pa, and sputtering power is 40~200W, and sputter gas is inert gas, sputtering time is 40~
120min, obtained MgAl film with a thickness of 0.1~5 μm；
Step 3 deposits one layer of Ta film using magnetron sputtering method in the hydrogen storage film that step 2 obtains, as protective layer；Its
In, sputtering pressure is 0.3~0.6Pa, and sputtering power is 40~200W, and sputter gas is inert gas, sputtering time is 40~
120min, obtained Ta film with a thickness of 0.01~5 μm；
Step 4 is taken out what step 3 obtained with the substrate of hydrogen storage film and protective layer, successively clear in acetone and deionized water
It washes, dries；
Step 5, the hydrogenation reaction of hydrogen storage film: the sample after step 4 drying is placed in gas absorption instrument, is evacuated to 5
×10-4Pa is hereinafter, then heating substrate is to 20~1000 DEG C；Hydrogen is passed through into adsorption instrument again, until gas atmosphere reaches
0.5KPa~5MPa keeps 0.5~100h under conditions of temperature is 20~1000 DEG C, hydrogen gas pressure is 0.5KPa~5MPa,
So that hydrogen storage film absorbs hydrogen；Complete the preparation of the quick-fried film bridge of the hydrogen.
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