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CN110021563A - 电子封装件 - Google Patents

电子封装件 Download PDF

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Publication number
CN110021563A
CN110021563A CN201810269719.3A CN201810269719A CN110021563A CN 110021563 A CN110021563 A CN 110021563A CN 201810269719 A CN201810269719 A CN 201810269719A CN 110021563 A CN110021563 A CN 110021563A
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Prior art keywords
antenna structure
carrier
packing piece
electronic
electronic packing
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CN110021563B (zh
Inventor
蔡明汎
邱志贤
蔡宗贤
杨超雅
陈嘉扬
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Siliconware Precision Industries Co Ltd
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Siliconware Precision Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
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    • H01L2224/481—Disposition
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract

一种电子封装件，其于一承载件上设置电子元件、缓冲部与天线结构，其中，该天线结构包含立设于该承载件上金属架及布设于该承载件上且电性连接该金属架的导线，并使该缓冲部遮盖该导线，以降低该导线的发射波速，进而降低该导线的发射波长，故该电子封装件可在该承载件的有限空间中满足天线的需求长度，使该天线结构能辐射出所需的作用频率。

Description

电子封装件
技术领域
本发明有关一种电子封装件，尤指一种具天线结构的电子封装件。
背景技术
随着电子产业的蓬勃发展，电子产品也逐渐迈向多功能、高性能的趋势。目前无线通讯技术已广泛应用于各式各样的消费性电子产品以利接收或发送各种无线讯号。
为了满足消费性电子产品的外观设计需求，无线通讯模块的制造与设计朝轻、薄、短、小的需求作开发，其中，平面天线(Patch Antenna)因具有体积小、重量轻与制造容易等特性而广泛利用于手机(cell phone)、掌上电脑(Personal Digital Assistant，简称PDA)等电子产品的无线通讯模块中。
图1为现有无线通讯模块的立体示意图，该无线通讯模块1包括：一基板10、设于该基板10上的多个电子元件11、一天线结构12以及封装材13。该基板10为电路板并呈矩形体。该电子元件11设于该基板10上且电性连接该基板10。该天线结构12为平面型且具有一天线本体120与一导线121，该天线本体120借由该导线121电性连接该电子元件11。该封装材13覆盖该电子元件11与该部分导线121。
然而，现有无线通讯模块1中，该天线结构12为平面型，且当该天线结构12的作用频率需为2.44GHz时，则需令该天线结构12的最小电性长度等于1/4波长，然因该天线结构12与该电子元件11之间的电磁辐射特性及该天线结构12的体积限制，在该基板10的有限空间中，难以增加该天线本体120与该导线121的长度，致使无法符合该天线结构12的作用频率为2.44GHz的需求。
此外，因该天线结构12为平面型，故需于该基板10的表面上增加布设区域(未形成封装材13的区域)以形成该天线本体120，致使该基板10的宽度难以缩减，因而难以缩小该无线通讯模块1的宽度，导致该无线通讯模块1无法达到微小化的需求。
因此，如何克服上述现有技术的种种问题，实已成目前亟欲解决的课题。
发明内容
鉴于上述现有技术的种种缺失，本发明揭露一种电子封装件，可在该承载件的有限空间中满足天线的需求长度，使该天线结构能辐射出所需的作用频率。
本发明的电子封装件包括：承载件；至少一电子元件，其设于该承载件上；天线结构，其设于该承载件上并电性连接该承载件，其中，该天线结构包含立设于该承载件上的金属架及设于该承载件上且电性连接该金属架的导线；以及缓冲部，其遮盖该导线且未电性连接该天线结构。
前述的电子封装件中，该天线结构以该导线电性连接该承载件。
前述的电子封装件中，该天线结构的作用频率为2.44GHz。
前述的电子封装件中，该金属架包含有延伸部与至少一支撑部，该延伸部借由该支撑部架设于该承载件上。例如，该缓冲部位于该延伸部与该导线之间。于一实施例中，该支撑部贯穿该缓冲部。
前述的电子封装件中，该缓冲部为绝缘体，如介电材，其介电系数为5至15。
前述的电子封装件中，该缓冲部为接触该金属架。
前述的电子封装件中，该缓冲部为遮盖部分该导线或遮盖全部该导线。
前述的电子封装件中，还包括封装材，其形成于该承载件上以包覆该电子元件、该缓冲部与该天线结构。
前述的电子封装件中，还包括形成于该承载件上且遮盖该电子元件的屏蔽结构。
由上可知，本发明的电子封装件主要借由该缓冲部遮蔽该导线的设计，以有效降低该导线的发射波速，而降低该导线的发射波长，故相比于现有技术，该电子封装件可在该承载件的有限空间中满足天线的需求长度，使该天线结构能辐射出所需的作用频率。
此外，借由该金属架的立体化设计，而无需于该承载件的表面上增加布设区域，故相比于现有技术，本发明能于预定的承载件尺寸下增加该天线结构的长度，而达到天线运作的需求，且能使该电子封装件符合微小化的需求。
附图说明
图1为现有无线通讯模块的立体示意图；以及
图2A至图2C为本发明的电子封装件的制法的立体示意图；其中，图2C’为对应图2C的剖面示意图；以及
图3A至图3C为对应图2C’的其它实施例的剖面示意图。
符号说明：
1 无线通讯模块
10 基板
11,21 电子元件
12,22 天线结构
120 天线本体
121,22c 导线
13,23 封装材
2 电子封装件
20 承载件
20c 侧面
200 线路结构
22a 金属架
220 延伸部
221 支撑部
24 屏蔽结构
25,35a,35b,35c 缓冲部
350 穿孔
A 第一区域
B 第二区域。
具体实施方式
以下借由特定的具体实施例说明本发明的实施方式，本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。
须知，本说明书所附图式所绘示的结构、比例、大小等，均仅用以配合说明书所揭示的内容，以供本领域技术人员的了解与阅读，并非用以限定本发明可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时，本说明书中所引用的如“上”、“二”及“一”等的用语，也仅为便于叙述的明了，而非用以限定本发明可实施的范围，其相对关系的改变或调整，在无实质变更技术内容下，当也视为本发明可实施的范畴。
图2A至图2C为本发明的电子封装件2的制法的立体示意图。于本实施例中，该电子封装件2例如为系统级封装(System in package，简称SiP)的无线通讯模块。
如图2A所示，于该承载件20上设置至少一电性连接该承载件20的电子元件及天线结构22，且于该承载件20对应该天线结构22的处配置至少一缓冲部25。
所述的承载件20为例如呈矩形体，并定义有相邻接的第一区域A与第二区域B。于本实施例中，该承载件20例如为具有核心层与线路结构的封装基板(substrate)或无核心层(coreless)的线路结构，其构成为于介电材上形成多个线路结构200，如扇出(fan out)型重布线路层(redistribution layer，简称RDL)。应可理解地，该承载件20也可为其它可供承载如晶片等电子元件的承载单元，例如导线架(leadframe)(其导脚可视为线路结构)，并不限于上述。
所述的电子元件21为主动元件、被动元件或其二者组合，且该主动元件为例如半导体晶片，而该被动元件为例如电阻、电容及电感。例如，该电子元件21为半导体晶片，其设于该承载件20的第一区域A上。于本实施例中，该电子元件为借由多个焊线以打线方式电性连接该线路结构200；或者，该电子元件21可借由借由多个如焊锡材料的导电凸块(图略)以覆晶方式设于该线路结构200上并电性连接该线路结构200；抑或，该电子元件21可直接接触该线路结构200。应可理解地，有关该电子元件21电性连接该承载件20的方式繁多，不限于上述。
所述的天线结构22设于该承载件20的第二区域B上，并包含一金属架22a及至少一电性连接该金属架22a的导线22c，使该天线结构22以该导线22c电性连接该承载件20。
于本实施例中，该天线结构22的作用频率为2.44GHz。具体地，若可降低波长，即可使天线在有限空间中满足最小1/4波长的电性长度的条件，而令该天线结构22辐射出2.44GHz的作用频率。
此外，该金属架22a为铁架或其它材质，其具有一延伸部220与一支撑部221，该支撑部221立设于该承载件20上，且该延伸部220借由该支撑部221架设于该承载件20上，使该延伸部220的位置高于该电子元件21与该缓冲部25的位置，且该延伸部220沿该承载件20的第二区域B的边缘作相对应延伸。具体地，该延伸部220作为天线主体，其呈弯曲或弯折状，例如，呈现具缺口的环状(如扣环状或ㄇ字形)、L字型或连续环状(如囗字型)，且该支撑部221电性连接该导线22c，其为单一柱体，但也可依需求设计为其它形状(如墙体)或多个。
此外，该导线22c设于该承载件20上并电性连接该线路结构200，且其中一端部连接该支撑部221，而另一端部连接该路层200。例如，该导线22c与该线路结构200一同制作，如RDL制程。应可理解地，该导线22c也可分为不相连的两线段，其中一线段连接该支撑部221，而另一线段连接该路层200。
另外，该支撑部221作为讯号输入端或接地端，使该电子元件21可依需求借由至少一焊线(图略)电性连接该延伸部220，且该延伸部220与该导线22c均可作为天线发射源，但借由该支撑部221架高该延伸部220以强化发射源，故于强度上，该延伸部220大于该导线22c。
所述的缓冲部25位于该第二区域B上以遮盖该导线22c且未电性连接该天线结构22、该电子元件21与该承载件20。
于本实施例中，该缓冲部25为绝缘体，如介电材，其介电系数(Er)为5至15，较佳为10，如陶瓷(ceramic)。需注意，该缓冲部25因接触该天线结构22但未电性连接该天线结构22，故其不属于导体或半导体。应可理解地，若该缓冲部25未接触该天线结构22且未电性连接该天线结构22，其材质可选择绝缘体、导体或半导体。
此外，该金属架22a架设于该承载件20上，且于该延伸部220与该承载件20之间形成容置空间，故能利用该容置空间布设该缓冲部25，使该缓冲部25位于该延伸部220与该导线22c之间，且未接触该延伸部220。或者，如图3A所示，可令该缓冲部35a接触该金属架22a的延伸部220。
此外，该缓冲部25遮盖全部该导线22c。然而，于另一制程中，如第3B图所示，可令该缓冲部35b遮盖部分该导线22c。
另外，于其它制程中，如图3C所示，可令该支撑部221贯穿该缓冲部35c。例如，该缓冲部35c形成穿孔350，以令该支撑部221插入或填入该穿孔350中。
如图2B所示，形成封装材23于该承载件20上，以令该封装材23包覆该电子元件21、该天线结构22及缓冲部25。
于本实施例中，该封装材23为聚酰亚胺(polyimide，简称PI)、干膜(dry film)、环氧树脂(epoxy)或封装材(molding compound)等，但不限于上述。
如图2C所示，形成一屏蔽结构24于该封装材23上，以遮盖该电子元件21。
于本实施例中，该屏蔽结构24覆盖该封装材23的部分表面与该承载件20的部分侧面，也就是仅对应形成于该承载件20的第一区域A，使其与该天线结构22未重叠，也就是该屏蔽结构24未遮盖该天线结构22。
此外，可借由涂布金属层(如铜材)的加工方式形成该屏蔽结构24于该封装材23上，例如，溅镀(sputtering)、蒸镀(vaporing)、电镀、无电电镀或化镀等方式；或者，利用盖设金属架或金属罩、或贴膜(foiling)等设置方式形成该屏蔽结构24于该封装材23上；抑或，可先于该承载件20上设置如金属架或金属罩的屏蔽结构，再以该封装材23包覆该屏蔽结构，使外观如图2B所示。
此外，该屏蔽结构24可依需求选择覆盖该承载件20的第一区域A的垂直投影范围，如全部、1/2或1/3，甚至可选择覆盖该承载件20的第一区域A的部分侧面20c或全部侧面20c。
另外，借由该屏蔽结构24的设计，使该电子元件21不会受外界的电磁干扰。具体地，该屏蔽结构24可选择性形成或不形成，例如，当该电子元件21的感应较为灵敏或该封装材23的厚度不足时，该电子元件21容易受电磁干扰，此时才需形成该屏蔽结构24。
于后续制程中，可将应用该电子封装件2的产品制成卷带式结构，如卷带包装(tape-on-reel)方式。
因此，由于波速正比波长的原理关系，也就是降低(减缓)波速，即可降低波长，故本发明的电子封装件2借由该缓冲部25,35a,35b,35c遮蔽该导线22c的设计，以有效降低(或减缓)该导线22c的发射波速，而降低该导线22c的发射波长。借此，相比于现有技术，该电子封装件2能在该承载件20的第二区域B的有限空间中，无需增加该导线22c的长度，即满足该天线结构22(或该导线22c)的最小电性长度为1/4波长的条件，使该天线结构22能辐射出2.44GHz的作用频率。
此外，该金属架22a架设于该承载件20上而呈立体式天线本体，因而无需于该承载件20的表面上增加布设区域，故相比于现有技术，该电子封装件2能于预定的承载件20尺寸下增加该天线结构22的长度，因而得以达到天线运作的需求，且能使该电子封装件2符合微小化的需求。
此外，该封装材23可用于固定该金属架22a，使该延伸部220位于固定高度而能确保天线稳定性，且利用该封装材23的介电系数能缩小该天线结构22所需的电气长度。
另外，借由将金属片折叠成立体化金属架22a，再将该延伸部220架设于该承载件20上，使该延伸部220对应第二区域B的边缘延伸，以于制程中，该延伸部220能与该电子元件21整合制作，也就是一同进行封装，使该封装材23能覆盖该电子元件21、缓冲部25,35a,35b,35c与该天线结构22，故封装制程用的模具能对应该承载件20的尺寸，因而有利于封装制程。
本发明还提供一种电子封装件2，其包括：一承载件20、一设于该承载件20上的电子元件21、一设于该承载件20上的天线结构22以及设于该承载件20上的缓冲部25,35a,35b,35c。
所述的承载件20具有多个线路结构200以电性连接该电子元件21。
所述的电子元件21电性连接该承载件20的线路结构200。
所述的天线结构22电性连接该承载件20，其中，该天线结构22包含一立设于该承载件20上的金属架22a及至少一布设于该承载件20上且电性连接该金属架22a的导线22c。
所述的缓冲部25,35a,35b,35c遮盖该导线22c且未电性连接该天线结构22。
于一实施例中，该天线结构22以其导线22c电性连接该承载件20。
于一实施例中，该天线结构22的作用频率为2.44GHz。
于一实施例中，该金属架22a具有一延伸部220与至少一支撑部221，该延伸部220借由该支撑部221架设于该承载件20上。例如，该缓冲部25,35a,35b,35c位于该延伸部220与该导线22c之间，进一步，该支撑部221贯穿该缓冲部35c。
于一实施例中，该缓冲部25,35a,35b,35c为绝缘体，如介电材，其介电系数为5至15。
于一实施例中，该缓冲部25,35a,35b,35c接触该金属架22a的支撑部221。
于一实施例中，该缓冲部35a接触该金属架22a的延伸部220。
于一实施例中，该缓冲部35b遮盖部分该导线22c。
于一实施例中，所述的电子封装件2还包括封装材23，形成于该承载件20上以包覆该电子元件21、该缓冲部25,35a,35b,35c与该天线结构22。
于一实施例中，所述的电子封装件2还包括一形成于该承载件20上的屏蔽结构24，遮盖该电子元件21而未遮盖该天线结构22及该缓冲部25,35a,35b,35c。
综上所述，本发明的电子封装件中，主要借由该缓冲部遮蔽该导线的设计，以有效降低(或减缓)该导线的发射波速，而降低发射波长，故该电子封装件在该承载件的有限空间中能使该天线结构辐射出所需的作用频率。
此外，借由立体式天线结构取代现有平面式天线结构的设计，因而无需于该承载件的表面上增加布设区域，即能增加该天线结构的长度，达到天线运作的需求。
上述实施例仅用以例示性说明本发明的原理及其功效，而非用于限制本发明。任何所属领域技术人员均可在不违背本发明的精神及范畴下，对上述实施例进行修改。因此本发明的权利保护范围，应如权利要求书所列。

Claims (12)

1.一种电子封装件，其特征为，该电子封装件包括：
承载件；
至少一电子元件，其设于该承载件上；
天线结构，其设于该承载件上并电性连接该承载件，其中，该天线结构包含立设于该承载件上的金属架及设于该承载件上且电性连接该金属架的导线；以及
缓冲部，其遮盖该导线且未电性连接该天线结构。
2.根据权利要求1所述的电子封装件，其特征为，该天线结构以该导线电性连接该承载件。
3.根据权利要求1所述的电子封装件，其特征为，该天线结构的作用频率为2.44GHz。
4.根据权利要求1所述的电子封装件，其特征为，该金属架包含有延伸部与至少一支撑部，该延伸部借由该支撑部架设于该承载件上。
5.根据权利要求4所述的电子封装件，其特征为，该缓冲部位于该延伸部与该导线之间。
6.根据权利要求4所述的电子封装件，其特征为，该支撑部贯穿该缓冲部。
7.根据权利要求1所述的电子封装件，其特征为，该缓冲部为绝缘体。
8.根据权利要求7所述的电子封装件，其特征为，该缓冲部为介电材，其介电系数为5至15。
9.根据权利要求1所述的电子封装件，其特征为，该缓冲部接触该金属架。
10.根据权利要求1所述的电子封装件，其特征为，该缓冲部为遮盖部分该导线或遮盖全部该导线。
11.根据权利要求1所述的电子封装件，其特征为，该电子封装件还包括封装材，形成于该承载件上以包覆该电子元件、该缓冲部与该天线结构。
12.根据权利要求1所述的电子封装件，其特征为，该电子封装件还包括形成于该承载件上且遮盖该电子元件的屏蔽结构。
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202135173A (zh) 2020-03-13 2021-09-16 力成科技股份有限公司 具局部外金屬層的半導體封裝結構及其製法
TWI798952B (zh) * 2021-11-22 2023-04-11 矽品精密工業股份有限公司 電子封裝件及其製法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6377464B1 (en) * 1999-01-29 2002-04-23 Conexant Systems, Inc. Multiple chip module with integrated RF capabilities
TW200822447A (en) * 2006-08-08 2008-05-16 Hitachi Ltd RFID tag and method for reading the same
CN101207101A (zh) * 2006-12-19 2008-06-25 育霈科技股份有限公司 用于干刻蚀的图案屏蔽结构及其方法
CN103311213A (zh) * 2012-05-04 2013-09-18 日月光半导体制造股份有限公司 整合屏蔽膜及天线的半导体封装件
US20150145747A1 (en) * 2013-11-28 2015-05-28 Siliconware Precision Industries Co., Ltd Electronic package and fabrication method thereof
CN104936395A (zh) * 2014-03-17 2015-09-23 矽品精密工业股份有限公司 电子封装件及其制法
US20150313003A1 (en) * 2014-04-28 2015-10-29 Apple Inc. Plastic Electronic Device Structures With Embedded Components
CN105789819A (zh) * 2014-12-10 2016-07-20 矽品精密工业股份有限公司 电子组件
CN106450659A (zh) * 2015-08-12 2017-02-22 矽品精密工业股份有限公司 电子模块

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6686649B1 (en) * 2001-05-14 2004-02-03 Amkor Technology, Inc. Multi-chip semiconductor package with integral shield and antenna
JP4981712B2 (ja) * 2008-02-29 2012-07-25 新光電気工業株式会社 配線基板の製造方法及び半導体パッケージの製造方法
US9006028B2 (en) * 2008-09-12 2015-04-14 Ananda H. Kumar Methods for forming ceramic substrates with via studs
US9257356B2 (en) * 2008-12-10 2016-02-09 Stats Chippac, Ltd. Semiconductor device and method of forming an IPD beneath a semiconductor die with direct connection to external devices
US20100327406A1 (en) * 2009-06-26 2010-12-30 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Inductor Over Insulating Material Filled Trench In Substrate
US9711465B2 (en) * 2012-05-29 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Antenna cavity structure for integrated patch antenna in integrated fan-out packaging
US10770795B2 (en) * 2016-05-27 2020-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Antenna device and method for manufacturing antenna device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6377464B1 (en) * 1999-01-29 2002-04-23 Conexant Systems, Inc. Multiple chip module with integrated RF capabilities
TW200822447A (en) * 2006-08-08 2008-05-16 Hitachi Ltd RFID tag and method for reading the same
CN101207101A (zh) * 2006-12-19 2008-06-25 育霈科技股份有限公司 用于干刻蚀的图案屏蔽结构及其方法
CN103311213A (zh) * 2012-05-04 2013-09-18 日月光半导体制造股份有限公司 整合屏蔽膜及天线的半导体封装件
US20150145747A1 (en) * 2013-11-28 2015-05-28 Siliconware Precision Industries Co., Ltd Electronic package and fabrication method thereof
CN104936395A (zh) * 2014-03-17 2015-09-23 矽品精密工业股份有限公司 电子封装件及其制法
US20150313003A1 (en) * 2014-04-28 2015-10-29 Apple Inc. Plastic Electronic Device Structures With Embedded Components
CN105789819A (zh) * 2014-12-10 2016-07-20 矽品精密工业股份有限公司 电子组件
CN106450659A (zh) * 2015-08-12 2017-02-22 矽品精密工业股份有限公司 电子模块

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