CN109909610A - Welding method and welding system for silicon wafer and glass - Google Patents
Welding method and welding system for silicon wafer and glass Download PDFInfo
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- CN109909610A CN109909610A CN201811534088.XA CN201811534088A CN109909610A CN 109909610 A CN109909610 A CN 109909610A CN 201811534088 A CN201811534088 A CN 201811534088A CN 109909610 A CN109909610 A CN 109909610A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 97
- 239000010703 silicon Substances 0.000 title claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 239000011521 glass Substances 0.000 title claims abstract description 61
- 238000003466 welding Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000012545 processing Methods 0.000 claims abstract description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 6
- 229960000935 dehydrated alcohol Drugs 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 230000009471 action Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000075 oxide glass Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
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- 238000004100 electronic packaging Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
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- 239000002994 raw material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
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- Laser Beam Processing (AREA)
Abstract
The invention belongs to laser micro/nano manufacture fields, are related to the welding method of a kind of silicon wafer and glass.Welding method of the invention is the following steps are included: S100: plating metal film on silicon wafer, forms metal-plated film layer；S200: before silicon chip film-coated face and glass gluing, glass dehydrated alcohol or acetone soln are cleaned by ultrasonic 2~5 minutes；S300: by silicon chip film-coated face and glass gluing；S400: nanosecond laser welding.The method of the present invention can not only reduce processing cost, realize industrialized requirement, and due to plate into metal-plated film layer there are the performances such as fabulous electric conductivity, the technology of laser welding can be applied more broadly in microelectronic component manufacture field, greatly widen the application range of this technology.
Description
Technical field
The invention belongs to laser micro/nano manufacture fields, and in particular to a kind of nanosecond laser is used for plating metal film layer
The welding method and welding system of silicon wafer and glass.
Background technique
The requirement for answering microelectronic component to develop, in order to solve the problems, such as the contact resistance of superlattice semiconductor microcooler,
The technology that metal contact membranes are prepared on silicon chip surface has been greatly developed.Monocrystalline silicon has a very wide range of applications, and is electricity
Indispensable basic material in the modern science and technology such as sub- computer, automatic control system not only penetrates into people's life
Each corner, and be space shuttle, spaceship, the essential raw material of artificial satellite, and be widely used in
In solar battery, the beginning for green energy resource revolution of marching toward is realized.Stabilization of the glass due to its good transparency and material
Property has a wide range of applications in the fields such as production of Electronic Packaging, biochip, precision instrument.
Therefore more stringent requirements are proposed for the bonding techniques of glass and silicon.Existing ultrafast laser for glass and
The welding technique of silicon wafer, the cost is relatively high for machinery equipment, and production efficiency is lower, promotes with being unfavorable for industrialization, especially not
Application field that is of less demanding suitable for processing precise degree, pursuing industrialization economic benefit.
Summary of the invention
In consideration of it, this method can not only it is necessary to provide the welding method of a kind of silicon wafer and glass regarding to the issue above
Reduce processing cost, realize industrialized requirement, and due to plate into metal-plated film layer there are the performances such as fabulous electric conductivity,
The technology of laser welding can be applied more broadly in microelectronic component manufacture field, greatly widen answering for this technology
Use range.
The present invention is achieved by the following technical solutions:
A kind of welding method of silicon wafer and glass, comprising the following steps:
S100: plating at least one layer of metal film on silicon wafer, forms metal-plated film layer；
S300: by silicon chip film-coated face and glass gluing；
S400: nanosecond laser welding.
Further, silicon wafer thickness range is 0.5mm~4.1mm in the step S100.
Further, metal-plated thicknesses of layers is 10~1000nm in the step S100.
Further, metal coating can be in the step S100 are as follows: copper film, titanium film, nickel film, aluminium film even alloy film
Deng.
Further, in the step S100, when metal-plated film layer by least double layer of metal film is formed by stacking when, it is described
Metal film can be the metal film of same metal, be also possible to the metal film of different metal.
Further, the method also includes S200: before silicon chip film-coated face and glass gluing, by the anhydrous second of glass
Alcohol or acetone soln are cleaned by ultrasonic 2~5 minutes.
Further, thickness of glass range described in the step S300 is 0.1mm~3.1mm.
Further, in the step S300 by the silicon wafer of glass and plated film carry out optical contact processing (using water suction,
The mode of extruding excludes the air between two samples, and two interfaces are bonded close by intermolecular Van der Waals force) make
Glass and silicon wafer fitting are close.
Further, the power of the transmitter of nanosecond laser is 10W~20W in the step S400.
Further, the wavelength of laser beam is 355nm~1064nm in the step S400.
Further, the pulse duration range of laser is 50ns~100ns in the step S400.
Further, the direct range of the focal beam spot of laser is 10um~20um in the step S400.
Further, the welding manner of the step S400 is the mode of line processing.
Further, 1~10000mm/s of process velocity of the step S400.
In some embodiments, the silicon wafer in the method can also be substituted for polysilicon, GaAs, phosphorus phosphide, antimony
It plugs with molten metal, the conventional semiconductor materials such as silicon carbide, cadmium sulfide and gallium arsenic silicon, and including oxide glass and nonoxide glass
Noncrystal amorphous semiconductor material substitution.
A kind of silicon and glass solder system, including laser, optic delivery systems, galvanometer scanning system, workbench, to
Weld sample；Laser is located at the side of optic delivery systems, and galvanometer scanning system is located at the lower section of optic delivery systems, work
Make the lower section that platform is located at galvanometer scanning system, sample to be welded is as the lower section on workbench and positioned at galvanometer scanning system.
Further, the laser is infrared nanosecond laser.
The invention has the advantages that:
The thickness of silicon wafer (or other can substitute the material of silicon wafer) of the present invention, metal-plated film layer and glass is in the present invention
In disclosed range, it can guarantee that three's thickness, quality match, the service life is longer.
After the surface of silicon wafer (or other can substitute the material of silicon wafer) plates metal film plating layer, with nanosecond laser reality
The welding of existing glass and silicon wafer (or other can substitute the material of silicon wafer) can not only reduce processing cost, realize industrialization
It is required that and due to plate into metal-plated film layer there are the performances such as fabulous electric conductivity, the technology of laser welding can more extensively
Ground is applied to microelectronic component manufacture field, has greatly widened the application range of this technology.
Detailed description of the invention
Fig. 1 is the silicon of the metal-coated membrane of the embodiment of the present invention and the structural schematic diagram of glass solder system；
Fig. 2 is the sample structure schematic diagram to be processed of the embodiment of the present invention；
Fig. 3 is the silicon of the metal-coated membrane of the embodiment of the present invention and the flow chart of glass solder system.
Appended drawing reference: 10- laser, 20- optic delivery systems, 30- galvanometer scanning system, 40- workbench, 50- are to be welded
Connect sample；51- glass, 52- silicon wafer (or other can substitute the material of silicon wafer), 53- metal-plated film layer, 54- laser action area
Domain.
Specific embodiment
Technical solution problem to be solved, the technical solution of use and what is reached have in order to better illustrate the present invention
Beneficial effect, is further described now in conjunction with specific embodiment.It is worth noting that technical solution of the present invention including but not limited to
Following implementation.
Particular technique or condition are not specified in the embodiment of the present invention, according to the literature in the art described technology
Or it condition or is carried out according to product description.Reagents or instruments used without specified manufacturer, being can be by commercially available
Etc. approach obtain conventional products.
The welding method of embodiment 1 silicon wafer of the invention and glass
The following steps are included:
S100: the metal-plated film layer 53 of 10~1000nm thickness is plated on the silicon wafer 52 of 0.5mm~4.1mm thickness；
S200: the dehydrated alcohol of glass 51 or acetone soln are cleaned by ultrasonic 2~5 minutes；
S300: the coated surface of the glass 51 of S200 and silicon wafer 52 is subjected to optical contact processing, is bonded the two；
S400: it is welded in silicon and glass solder system with the material that nanosecond laser is bonded step (2).
In some embodiments, the metal-plated film layer 53 can be copper film, titanium film, nickel film, aluminium film etc..
In some embodiments, the metal-plated film layer 53 in the step S100 is formed by stacking by least one layer of metal film；
When metal-plated film layer 53 by least double layer of metal film is formed by stacking when, at least two layers of the metal film can be identical gold
Belong to film, is also possible to different metal films.
In some embodiments, the power of the transmitter (i.e. laser 10) of nanosecond laser is 10W in the step S400
Any value between~20W.
In some embodiments, the wavelength of laser beam any value between 355nm-~1064nm in the step S400.
In some embodiments, the pulse duration range of laser any value between 50ns~100ns in the step S400.
In some embodiments, in the step S400 the direct range of the focal beam spot of laser between 10um~20um
Any value.
In some embodiments, the welding manner of the step S400 is the mode of line processing.
In some embodiments, any value between 1~10000mm/s of process velocity of the step S400.
In some embodiments, the silicon wafer 52 in the method can also be substituted for polysilicon, GaAs, phosphorus phosphide, antimony
The conventional semiconductor materials such as change plugs with molten metal, silicon carbide, cadmium sulfide and gallium arsenic silicon, and including oxide glass and nonoxide glass
Noncrystal amorphous semiconductor material substitution.
It wherein, refering to fig. 1, is silicon described in step S400 (or other can substitute the material of silicon wafer) and glass solder
The structural schematic diagram of system.The silicon (or other can substitute the material of silicon wafer) and glass solder system packet of the embodiment of the present invention
Include laser 10, optic delivery systems 20, galvanometer scanning system 30, workbench 40, sample to be welded 50；Laser 10 is located at
The side of optic delivery systems 20, galvanometer scanning system 30 are located at the lower section of optic delivery systems 20, and workbench 40 is located at galvanometer
The lower section of scanning system 30, sample 50 to be welded is as the lower section on workbench 40 and positioned at galvanometer scanning system 30.
The silicon (or other can substitute the material of silicon wafer) of the metal-coated membrane of the embodiment of the present invention and glass solder system
Fundamentals of Welding are as follows: laser beam is emitted by laser 10, the laser beam of transmitting is incident to galvanometer after optic delivery systems 20
Scanning system 30 is focused processing to laser beam by galvanometer scanning system 30, makes laser beam inside welded workpiece 50
Hot spot is formed, and welded workpiece 50 is welded using focal beam spot；Galvanometer scanning system 30 is for different-thickness
Welded workpiece 50 can set corresponding technological parameter and be cut, and technological parameter includes laser power, cutting speed and focus
Position etc.；In laser beam welding, the glass 51 (referring to fig. 2) of the laser beam focus of high-energy density to welded workpiece 50
At the interface metal-plated film layer 53 (referring to fig. 2) of silicon wafer 52 (referring to fig. 2) (or other can substitute the material of silicon wafer),
Metal material melts after absorbing laser energy, and glass 51 and silicon wafer 52 (or other substitute the material of silicon wafer) are bonded
Together, reach welding effect.
The metal-plated film layer 53 is whole weldings or part with the connection type of semiconductor material layer 52 and glassy layer 51
Welding.When the metal-plated film layer 53 is part welding with the connection type of semiconductor material layer 52 and glassy layer 51, laser
The zone of action 54 is metallic film melts join domain；When the metal-plated film layer 53 and semiconductor material layer 52 and glassy layer 51
Connection type when being whole weldings, metal connecting layer 53 is metallic film melts join domain.It referring to fig. 2, is metal coating
A kind of embodiment when the connection type of layer 53 and semiconductor material layer 52 and glassy layer 51 is part welding.Some other
In embodiment, the laser action region 54 can also be circle, polygon or other any desired shapes of arbitrary dimension
Deng.
In embodiments of the present invention, laser 10 is optical fiber infrared laser, and the power of laser 10 is 10W~20W,
The wavelength of the emitted laser beam of laser 10 is 1064nm, and pulse duration range is 50ns~100ns, the direct range of focal beam spot
It is to be welded by being realized in a non contact fashion using the lesser pulse width of laser beam and shorter wavelength for 10um~20um
The welding of workpiece 50, since its wavelength is short, hot spot is small, and heat-affected zone is small, obtains the welding processing of high-precision and high quality
Effect.
In embodiments of the present invention, the welded workpiece 50 is glass 51 and the silicon wafer being coated with after metal-plated film layer 53
Sample after 52 (or other can substitute the material of silicon wafer) fitting, wherein 51 thickness range of glass is 0.1mm~3.1mm, silicon
(or other can substitute the material of the silicon wafer) thickness range of piece 52 is 0.5mm~4.1mm, the metal-plated being plated at 51 burnishing surfaces
53 thickness range of film layer is 10nm~1000nm.
It is welded using low-power output laser, laser acts in metal-plated film layer 53 as heating source to be made
Glass 51 and silicon wafer 53 (or other can substitute the material of silicon wafer) bonding are obtained, in addition to the Energy distribution of laser and the shadow of density
Outside ringing, material equally has a huge impact the absorption threshold value of laser to welding effect, therefore comprehensively considers various factors,
It chooses laser output power of the invention to process sample, successfully realizes that (or other can be replaced for glass 51 and silicon wafer 52
For the material of silicon wafer) bonding.
Metal film is plated on silicon wafer 52 (or other can substitute the material of silicon wafer) by the way of plated film, works as laser
While acting on metal-plated film layer 53 two materials be welded successfully, enable have film plating layer 53 silicon wafer 52 (or other
Substitute the material of silicon wafer) realize electricity, magnetic, optical property requirement.(or other can be replaced for glass 51 and silicon wafer 52 after laser action
For the material of silicon wafer) region that is welded successfully, through glass can be clearly observed silicon wafer 52 after laser action (or its
He can substitute the material of silicon wafer) on metal-plated film layer 53 in whole or in part dissipate (depending on being whole weldings or part
Welding mode), nanosecond laser as heat source make metal-plated film layer 53 completely or partially melting after successfully by glass 51 and silicon
Piece 52 (or other can substitute the material of silicon wafer) closely bonds together.
Embodiment 2 welding method welding silicon wafer of the invention and glass
Referring to Fig. 3, be the metal-coated membrane of the embodiment of the present invention silicon 53 (or other can substitute the material of silicon wafer) and
The flow chart of 51 welding method of glass.The following steps are included:
Step S100: it is formed using coating machine in the polished surface of silicon wafer 52 (or other can substitute the material of silicon wafer)
The control range of the metal-plated film layer 53 of 50nm thickness, 53 thickness of metal-plated film layer is isolated in 10nm~1000nm, and in time
Processing, prevents metal-plated film layer 53 to be contaminated and scratch.
Step S200: ultrasonic cleaning is carried out to glass 51, glass 51 is put into dehydrated alcohol or acetone soln and is cleaned
2~5 minutes, in order to guarantee that laser enables energy to transmit well between two bonding pads as heating source, it is necessary to make to be bonded
Piece can be closely contacted together, its surface of glass 51 after being cleaned with dehydrated alcohol or acetone soln can increase, in comparing
Strong hydrophily.
Step S300: by glass 51 and the silicon wafer 52 (or other can substitute the material of silicon wafer) for adding metal-plated film layer 53
It fits together at room temperature, optics is carried out to two samples during the bonding process if institute's metal-coated membrane is relatively firm
Contact treatment, so that two samples are snugly even closer.Hydrogen bond and van der Waals interaction of the sample by interface, without outer
Plus-pressure can be in close contact at room temperature together, generated biggish remnants after being bonded to avoid external pressure is applied and answered
Power.Metal-plated film layer 53 is at the interface of glass 51 and silicon wafer 53 (or other can substitute the material of silicon wafer).
Step S400: in silicon 52 (or other can substitute the material of silicon wafer) and 51 welding system of glass, using line plus
The mode of work welds sample, and the controlled range of process velocity is 1~10000mm/s, and adding using the face that is wired to
Work mode acts on sample, i.e., arbitrarily controls graphics processing by controlling software, using between suitable filling mode and filling
Away from (using line filling mode, can choose the modes such as S type, linear type, helical ring geometric pattern, be also possible to the folded of several ways
Add；Fill spacing general control in 0.001~0.1mm), so that galvanometer according to design parameter the continuous cabling in the range of work,
Complete the welding of entire machining area.
It is flexibly easily operated using laser processing mode, it is low in cost using nanosecond laser, it is easy to industrial applications
Popularization；On semiconductor material after plating metal film layer, the mode of laser processing is reused, utilizes being heated for metallic diaphragm
Melt effect, realizes the successful bonding of semiconductor material and transparent material.This technology is while realizing material binds, laser
Neatly processing method can also be according to requiring to process different shape and thickness on metallic diaphragm, relative to traditional for beam
Chip manufacturing process can design the route on metallic diaphragm, and two kinds of techniques of bonding of material are combined into one, and simplify processing
Process greatly improves production efficiency, while can also mitigate environmental pollution, meets the requirement of energy-saving and environment friendly.
When the welding of the method for the present invention part, by control laser action region 54 shape, obtain meet the requirements it is unmelted
The shape for the metal-plated film layer 53 melted designs required circuit diagram etc. using 53 region of metal-plated film layer not melted.Laser
The zone of action 54 plays the role of bonding glass 51 and silicon wafer 52, by this method control machined parameters make 53 regions not by
Damage.
The welding manner that glass and silicon wafer at most use at present is anodic bonding (300-450 DEG C), overall processing temperature compared with
Height, residual stress is higher, cracked easily on bonding face or even rupture.Office may be implemented in the laser welding that the present invention controls
Portion's high temperature process avoids generating destruction to non-processing region, and in 1mm, glass front is several for the positive ablation influence area of silicon wafer
It does not influence, stability, reliability, fatigue durability are all more outstanding.(bonding is strong in 10-20MPa for the tensile strength of anodic bonding
Degree is 6.2-9.8MPa), the tensile strength 20-40MPa of laser welding.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to of the invention
Protection scope.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. the welding method of a kind of silicon wafer and glass, which comprises the following steps:
S100: plating at least one layer of metal film on silicon wafer, forms metal-plated film layer；
S300: by silicon chip film-coated face and glass gluing；
S400: nanosecond laser welding.
2. the welding method of silicon wafer according to claim 1 and glass, which is characterized in that silicon wafer is thick in the step S100
Degree range is 0.5mm~4.1mm, and thickness of glass range described in the step S300 is 0.1mm~3.1mm.
3. the welding method of silicon wafer according to claim 1 and glass, which is characterized in that metal-plated in the step S100
Thicknesses of layers is 10~1000nm.
4. the welding method of silicon wafer according to claim 1 and glass, which is characterized in that metal film in the step S100
It can be with are as follows: copper film, titanium film, nickel film, aluminium film or alloy film.
5. the welding method of silicon wafer according to claim 1 and glass, which is characterized in that when metal-plated film layer is by least two
When layer metal film is formed by stacking, the metal film is the metal film of at least one metal.
6. the welding method of silicon wafer according to claim 1 and glass, which is characterized in that the method also includes S200:
Before silicon chip film-coated face and glass gluing, glass dehydrated alcohol or acetone soln are cleaned by ultrasonic 2~5 minutes.
7. the welding method of silicon wafer according to claim 1 and glass, which is characterized in that by glass in the step S300
Optical contact processing is carried out so that glass and silicon wafer are bonded closely with the silicon wafer of plated film.
8. the welding method of silicon wafer according to claim 1 and glass, which is characterized in that nanosecond swashs in the step S400
The power of the transmitter of light is 10W~20W, and wavelength is 355nm~1064nm, and pulse duration range is 50ns~100ns, focal beam spot
Direct range be 10um~20um；The mode that the welding manner of the step S400 is processed for line, process velocity 1~
10000mm/s。
9. according to claim 1 to the welding method of silicon wafer described in 8 any one and glass, which is characterized in that the silicon wafer
Alternative materials include polysilicon, GaAs, phosphorus phosphide, antimony plug with molten metal, silicon carbide, cadmium sulfide, gallium arsenic silicon or noncrystal amorphous
Semiconductor material.
10. a kind of silicon and glass solder system, which is characterized in that including laser, optic delivery systems, galvanometer scanning system,
Workbench, sample to be welded；Laser is located at the side of optic delivery systems, and galvanometer scanning system is located at optic delivery systems
Lower section, workbench are located at the lower section of galvanometer scanning system, and sample to be welded is as on workbench and positioned at galvanometer scanning system
Lower section.
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| CN201811534088.XA CN109909610A (en) | 2018-12-14 | 2018-12-14 | Welding method and welding system for silicon wafer and glass |
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|---|---|---|---|
| CN201811534088.XA CN109909610A (en) | 2018-12-14 | 2018-12-14 | Welding method and welding system for silicon wafer and glass |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112222616A (en) * | 2020-09-09 | 2021-01-15 | 深圳市艾雷激光科技有限公司 | Laser welding method and voice coil motor |
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