CN109540327A - A kind of heating combined equipment accurately controlled with direct temperature measurement - Google Patents
A kind of heating combined equipment accurately controlled with direct temperature measurement Download PDFInfo
- Publication number
- CN109540327A CN109540327A CN201811400423.7A CN201811400423A CN109540327A CN 109540327 A CN109540327 A CN 109540327A CN 201811400423 A CN201811400423 A CN 201811400423A CN 109540327 A CN109540327 A CN 109540327A
- Authority
- CN
- China
- Prior art keywords
- heating device
- temperature measurement
- base
- metal film
- precise control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 33
- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 12
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims abstract description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims abstract description 5
- 239000004593 Epoxy Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000005259 measurement Methods 0.000 abstract description 6
- 238000011160 research Methods 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 abstract 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/006—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on microwaves or longer electromagnetic waves, e.g. measuring temperature via microwaves emitted by the object
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Control Of Resistance Heating (AREA)
Abstract
本发明公开了一种可精确控制和直接测温的制热装置，安装在冷却腔体内部，包括基底，基底上部设有金属薄膜，金属薄膜表面边缘部位设有两个电极，电极设有连接外部电源的导线；基底材料为硒化锌，厚度为0.75mm，长和宽分别为4cm和2cm；金属薄膜材料为氧化铟锡，厚度为100nm，磁控溅射于基底上部；导线材质为铜，导线与电极通过环氧点焊连接。可以实现制热热流的精确控制和被冷却表面温度的直接测量，以进行冷却技术实验研究；通过调节外接变压器可实现制热装置发热量的精确控制，且热流密度均匀性高；该制热装置便于安装、更换和清洗，而且可以根据实验工况要求设计不同的基底形状。
The invention discloses a heating device capable of precise control and direct temperature measurement. It is installed inside a cooling cavity and includes a base. The upper part of the base is provided with a metal film, and two electrodes are provided at the edge of the surface of the metal film. The wire of the external power supply; the base material is zinc selenide, the thickness is 0.75mm, the length and width are 4cm and 2cm respectively; the metal film material is indium tin oxide, the thickness is 100nm, and the magnetron sputtering on the upper part of the base; the wire material is copper , the wire and the electrode are connected by epoxy spot welding. The precise control of the heating heat flow and the direct measurement of the temperature of the cooled surface can be achieved to conduct experimental research on cooling technology; by adjusting the external transformer, the precise control of the calorific value of the heating device can be achieved, and the uniformity of the heat flow density is high; the heating device It is easy to install, replace and clean, and different base shapes can be designed according to the requirements of experimental conditions.
Description
Technical field
The present invention relates to analog chips needed for a kind of research of chip cooling technology experiment more particularly to one kind can be accurate
The heating combined equipment of control and direct temperature measurement.
Background technique
With the fast development of microelectronic component, electronic device integrated level is quickly improved, high heat flux density cooling technology
It researches and develops extremely urgent.Experimental study is the important means of high heat flux density cooling technology research, however replacing as actual chips
Dai Pin, made of metal heat block heat flow density uniformity is not easy to control, and the wall surface temperature that radiates can not be measured directly.
Currently used made of metal heat block surface temperature measurement method is that the method estimation calculated by one-dimensional heat conduction inverting is surveyed
Surface temperature is tried, and existing document points out not to be one-dimensional heat conduction between measurement point and test surfaces, the heat dissipation capacity of side can not neglect
Slightly.Therefore, how reducing simulation heating combined equipment to greatest extent and replacing error brought by actual chips is to carry out high heat flux density
Cooling technology research and development experiment urgent problem.
Summary of the invention
The object of the present invention is to provide a kind of heating combined equipments accurately controlled with direct temperature measurement, realize the essence of heating hot-fluid
The really direct measurement of control and cooled surface temperature, to carry out cooling technology experimental study.
The purpose of the present invention is what is be achieved through the following technical solutions:
The heating combined equipment accurately controlled with direct temperature measurement of the invention, is mounted on inside cooling cavities, including a substrate,
Positioned at heat-producing machine bottom；One layer of metallic film is located at base upper portion；Two electrodes are located at film surface edge；Two are led
Line connects external power supply and electrode, and after power is fixed, metallic film generates heat, is connected on one side with substrate, and another side produces
Raw uniform heat；
The base material is zinc selenide, with a thickness of 0.75mm, long and wide respectively 4cm and 2cm；
The metallic film material is tin indium oxide, and with a thickness of 100nm, magnetron sputtering is in base upper portion；
The lead material is copper, and the conducting wire is connect with the electrode by epoxy spot welding.
As seen from the above technical solution provided by the invention, provided in an embodiment of the present invention to accurately control and directly
The accurate control of heating hot-fluid and the direct measurement of cooled surface temperature may be implemented in the heating combined equipment of thermometric, cold to carry out
But technology experiment is studied.
Detailed description of the invention
Fig. 1 is the heating combined equipment structural schematic diagram provided in an embodiment of the present invention accurately controlled with direct temperature measurement.
In figure:
1- zinc selenide (ZnSe) substrate, 2- tin indium oxide (ITO) material layer, 3-Cu/Ni/Au electrode, 4, fine copper lead.
Specific embodiment
Combined with specific embodiments below, the present invention is furture elucidated, it should be understood that the embodiment be merely to illustrate the present invention and
It is not used in and limits the scope of the invention, after the present invention has been read, those skilled in the art are to various shapes of equal value of the invention
It is as defined in the appended claims that the modification of formula falls within the application.The content being not described in detail in the embodiment of the present invention belongs to this
The prior art well known to skilled artisan.
The heating combined equipment accurately controlled with direct temperature measurement of the invention, preferable specific embodiment is:
It is mounted on inside cooling cavities, including a substrate, is located at heat-producing machine bottom；One layer of metallic film is located in substrate
Portion；Two electrodes are located at film surface edge；Two conducting wire connection external power supplies and electrode, after power is fixed, gold
Belong to film and generate heat, be connected on one side with substrate, another side generates uniform heat；
The base material is zinc selenide, with a thickness of 0.75mm, long and wide respectively 4cm and 2cm；
The metallic film material is tin indium oxide, and with a thickness of 100nm, magnetron sputtering is in base upper portion；
The lead material is copper, and the conducting wire is connect with the electrode by epoxy spot welding.
The substrate and metallic film are rectangle, and described two electrode arrangements are in rectangular metallic film both ends.
The substrate surface roughness is 40 μm.
The external power supply is 50V low-tension supply below, is not distinguished just when described two electrodes are connect with external power supply
Cathode.
The diameter of wire 0.1mm, length is adjustable.
The resistance value of the heating combined equipment be 45.6 Ω/□, and resistance value can be adjusted by the control of thickness of metal film, the system
The heat flow of thermal is adjusted by transformer.
The heating combined equipment accurately controlled with direct temperature measurement of the invention, may be implemented heating hot-fluid it is accurate control and by
The direct measurement of cooling surface temperature, to carry out cooling technology experimental study.
The invention has the advantages that (1) difference dut temperature range corresponds to different infrared wavelengths, selenium is designed based on optical principle
Change zinc substrate thickness and tin indium oxide thickness makes infrared light transmissivity reach 83%, realizes the direct standard on cooled surface
Really measurement；(2) the accurate control of heating combined equipment calorific value, and heat flow density uniformity can be realized by adjusting external transformer
It is high；(3) heating combined equipment as and connection structure are easily installed, replace and clean, and can require to set according to experiment condition
Count different shapes of substrates.
Specific embodiment:
As shown in Figure 1, structure includes zinc selenide substrate, indium tin oxide material layer, Cu/Ni/Au electrode layer and fine copper conducting wire.
The indium tin oxide material layer is located at zinc selenide base upper portion, and told Cu/Ni/Au electrode layer is set and table on indium tin oxide material layer
The position at face rectangle both ends.Preparation method includes the following steps:
1) for preferred dimension in 40mm × 20mm × 0.75mm zinc selenide substrate, carrying out surface treatment to upper surface makes its table
Surface roughness reaches 40 μm, after cleaning up using ultrasonic cleaner, examines surface；
2) zinc selenide substrate made from step 1) is packed into special coating system, vacuumizes, is then oxygenated to 1 × 10-2Pa；
3) fusing tin indium oxide material, vapor deposition to the zinc selenide substrate upper surface in step 2) are deflated in advance；
4) the heating combined equipment surface obtained by step 3) makes metal electrode layer, welding lead, for connecting transformer；
5) test institute's refrigerating/heating apparatus resistance value, measure the heating combined equipment resistance value be 45.6 Ω/□。
It is zinc selenide translucent base that this is described, which to accurately control with the substrate of the heating combined equipment of direct temperature measurement, in substrate
For tin indium oxide resistance elements, it is provided with metal electrode layer and fine copper lead, lead is used to connect heating combined equipment and outer
Portion's transformer.
It above are only the specific embodiment of the invention, but the design concept of the present invention is not limited to this, it is all to utilize this structure
Think of makes a non-material change to the present invention, and should belong to the behavior for invading the scope of protection of the invention.But it is all without departing from
The content of technical solution of the present invention, according to the technical essence of the invention to made by above example it is any type of it is simple modification,
Equivalent variations and remodeling still fall within the protection scope of technical solution of the present invention.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811400423.7A CN109540327A (en) | 2018-11-22 | 2018-11-22 | A kind of heating combined equipment accurately controlled with direct temperature measurement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811400423.7A CN109540327A (en) | 2018-11-22 | 2018-11-22 | A kind of heating combined equipment accurately controlled with direct temperature measurement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109540327A true CN109540327A (en) | 2019-03-29 |
Family
ID=65850143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811400423.7A Pending CN109540327A (en) | 2018-11-22 | 2018-11-22 | A kind of heating combined equipment accurately controlled with direct temperature measurement |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109540327A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1261249A (en) * | 1999-01-21 | 2000-07-26 | Tdk株式会社 | Organic electroluminescent display device |
| CN102365753A (en) * | 2008-10-30 | 2012-02-29 | 纳米太阳能公司 | Hybrid Transparent Conductive Electrode |
| CN105118887A (en) * | 2015-07-14 | 2015-12-02 | 合肥工业大学 | Graphene/zinc selenide nanobelt schottky junction blue-ray photoelectric switch modified by indium nanoparticle array and preparation method thereof |
| US20170110616A1 (en) * | 2014-03-21 | 2017-04-20 | Brookhaven Science Associates, Llc | HOLE BLOCKING, ELECTRON TRANSPORTING AND WINDOW LAYER FOR OPTIMIZED Culn (1-x)Ga(x)Se2 SOLAR CELLS |
-
2018
- 2018-11-22 CN CN201811400423.7A patent/CN109540327A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1261249A (en) * | 1999-01-21 | 2000-07-26 | Tdk株式会社 | Organic electroluminescent display device |
| CN102365753A (en) * | 2008-10-30 | 2012-02-29 | 纳米太阳能公司 | Hybrid Transparent Conductive Electrode |
| US20170110616A1 (en) * | 2014-03-21 | 2017-04-20 | Brookhaven Science Associates, Llc | HOLE BLOCKING, ELECTRON TRANSPORTING AND WINDOW LAYER FOR OPTIMIZED Culn (1-x)Ga(x)Se2 SOLAR CELLS |
| CN105118887A (en) * | 2015-07-14 | 2015-12-02 | 合肥工业大学 | Graphene/zinc selenide nanobelt schottky junction blue-ray photoelectric switch modified by indium nanoparticle array and preparation method thereof |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190329 |