CN108351607B - Substrate processing equipment - Google Patents
Substrate processing equipment Download PDFInfo
- Publication number
- CN108351607B CN108351607B CN201680063524.2A CN201680063524A CN108351607B CN 108351607 B CN108351607 B CN 108351607B CN 201680063524 A CN201680063524 A CN 201680063524A CN 108351607 B CN108351607 B CN 108351607B
- Authority
- CN
- China
- Prior art keywords
- substrate
- center line
- pattern
- support member
- drum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
技术领域technical field
本发明是关于基板处理装置、基板处理装置的调整方法、元件制造系统及元件制造方法。The present invention relates to a substrate processing apparatus, an adjustment method of the substrate processing apparatus, a device manufacturing system, and a device manufacturing method.
背景技术Background technique
以往,作为基板处理装置,已知有一种近接方式的图案曝光装置,其具备搬送片状工件(基板)的曝光滚筒、配置于曝光滚筒上部的光罩、以及将来自曝光光源的光以旋转多面镜加以扫描并照射于曝光用光罩的照明部(参照例如专利文献1)。此图案曝光装置,是借由以曝光滚筒一边搬送片状工件、一边从照明部对光罩照射光,而于工件曝光光罩的光罩图案。专利文献1所记载的图案曝光装置,虽是将工件卷绕于曝光滚筒来搬送,但有可能因曝光滚筒的旋转所致的振动等影响,使光罩与工件的配置关系变化。此情形下,卷绕于曝光滚筒的工件与光罩的配置关系,由于会从适于曝光的既定配置关系位移,因此光罩的光罩图案难以精度良好地曝光至工件。Conventionally, as a substrate processing apparatus, a proximity-type pattern exposure apparatus is known, which includes an exposure drum for conveying a sheet-like workpiece (substrate), a mask arranged on the upper portion of the exposure drum, and a multi-surface rotating light from an exposure light source. The mirror is scanned and irradiated to the illumination portion of the exposure mask (see, for example, Patent Document 1). This pattern exposure apparatus exposes the mask pattern of the photomask to the workpiece by irradiating the photomask with light from the illumination unit while conveying the sheet-like workpiece by the exposure drum. In the pattern exposure apparatus described in
现有技术文件prior art documents
专利文献1:日本特开2007-72171号公报Patent Document 1: Japanese Patent Laid-Open No. 2007-72171
发明内容SUMMARY OF THE INVENTION
依据本发明的第1方面,提供一种基板处理装置,将长条的片状基板搬送于长边方向,且于该片状基板上依序形成既定图案,其具备:圆筒卷筒,具有从延伸于与前述长边方向交叉的方向的中心线起一定半径的圆筒状外周面,以该外周面的一部分支承前述片状基板;第1支承构件,将前述圆筒卷筒轴支成能绕前述中心线旋转;图案形成装置,与前述圆筒卷筒的外周面中支承前述片状基板的部分对向配置,于前述片状基板上形成前述图案;第2支承构件,保持前述图案形成装置;连结机构,将前述圆筒卷筒与前述图案形成装置的相对配置关系连结成能调整;基准构件,与前述圆筒卷筒一起绕前述中心线旋转,设有用以测量前述圆筒卷筒的旋转方向或前述中心线方向的位置变化的指标;以及第1检测装置,设于前述第2支承构件,检测前述基准构件的指标以检测前述圆筒卷筒的旋转方向或前述中心线方向的位置变化。According to a first aspect of the present invention, there is provided a substrate processing apparatus that conveys a long sheet-like substrate in the longitudinal direction and sequentially forms a predetermined pattern on the sheet-like substrate, comprising: a cylindrical roll having A cylindrical outer peripheral surface having a predetermined radius from a center line extending in a direction intersecting the longitudinal direction supports the sheet-like substrate with a part of the outer peripheral surface; rotatable around the center line; a pattern forming device is disposed opposite to a portion of the outer peripheral surface of the drum that supports the sheet substrate, and forms the pattern on the sheet substrate; a second support member holds the pattern a forming device; a connecting mechanism for connecting the relative arrangement relationship between the reel and the pattern forming device so as to be adjustable; a reference member for rotating around the center line together with the reel, and provided with a measuring device for measuring the reel an index of a positional change in the direction of rotation of the drum or the direction of the centerline; and a first detection device provided on the second support member for detecting the index of the reference member to detect the direction of rotation of the drum or the direction of the centerline position changes.
依据本发明的第2方面,提供一种基板处理装置的调整方法,该基板处理装置具有以从中心线起一定半径的圆筒状外周面支承片状基板且被第1支承构件支承成绕前述中心线旋转的圆筒卷筒、以及于第2支承构件支承成在被前述圆筒卷筒支承的前述片状基板形成既定图案的图案形成装置,该调整方法包含:借由配置于前述第2支承构件侧的一对读取头读取设在前述圆筒卷筒的前述中心线方向两侧的旋转测量用编码器的一对标尺部的各个的动作;从前述一对读取头的检测结果求出前述圆筒卷筒与前述图案形成装置的从既定相对配置关系起的偏差的动作;以及以减少前述求出的偏差的方式,调整将前述第1支承构件与前述第2支承构件连结成能相对位移的连结机构的动作。According to a second aspect of the present invention, there is provided a method for adjusting a substrate processing apparatus having a cylindrical outer peripheral surface with a constant radius from a center line that supports a sheet substrate and is supported by a first support member so as to surround the aforementioned A drum that rotates on a center line, and a pattern forming apparatus that is supported by a second support member so as to form a predetermined pattern on the sheet substrate supported by the drum, the adjustment method comprising: by arranging the second The operation of reading each of a pair of scale portions of the encoder for rotation measurement provided on both sides in the centerline direction of the reel by a pair of read heads on the support member side; detection from the pair of read heads As a result, the operation of the deviation from the predetermined relative arrangement relationship between the reel and the pattern forming apparatus is obtained, and the connection between the first support member and the second support member is adjusted so as to reduce the obtained deviation. The action of the linking mechanism capable of relative displacement.
依据本发明的第3方面,提供一种基板处理装置的调整方法,该基板处理装置具有以从中心线起一定半径的圆筒状外周面支承片状基板且被第1支承构件支承成绕前述中心线旋转的圆筒卷筒、以及于第2支承构件支承成在被前述圆筒卷筒支承的前述片状基板形成既定图案的图案形成装置,该调整方法包含:借由配置于前述第2支承构件侧的一对读取头读取设在前述圆筒卷筒的前述中心线方向两侧的旋转测量用编码器的一对标尺部的各个的动作;从前述一对读取头的检测结果,求出前述圆筒卷筒与前述图案形成装置的从既定相对配置关系起的偏差的动作;以及反映前述求出的偏差,相对前述圆筒卷筒调整前述图案形成装置于前述片状基板上形成图案的区域的空间上位置的动作。According to a third aspect of the present invention, there is provided a method for adjusting a substrate processing apparatus having a cylindrical outer peripheral surface with a constant radius from a center line that supports a sheet substrate and is supported by a first support member so as to surround the above-mentioned A drum that rotates on a center line, and a pattern forming apparatus that is supported by a second support member so as to form a predetermined pattern on the sheet substrate supported by the drum, the adjustment method comprising: by arranging the second The operation of reading each of a pair of scale portions of the encoder for rotation measurement provided on both sides in the centerline direction of the reel by a pair of read heads on the support member side; detection from the pair of read heads As a result, the operation of the deviation from a predetermined relative arrangement relationship between the reel and the pattern forming apparatus is obtained, and the pattern forming apparatus on the sheet substrate is adjusted with respect to the reel with respect to the reel reflecting the obtained deviation. The action on the spatial location of the patterned area.
依据本发明的第4方面,提供一种元件制造系统,其具备本发明第1方面的基板处理装置。According to a fourth aspect of the present invention, there is provided a device manufacturing system including the substrate processing apparatus of the first aspect of the present invention.
依据本发明的第5方面,提供一种元件制造方法,其中,本发明第1方面的图案形成装置,是对前述片状基板照射与既定图案的形状对应的光能量的曝光装置;且包含:将于表面形成有感光性功能层的前述片状基板在以前述圆筒卷筒的一部分支承的状态下搬送于前述长边方向的动作;朝向前述片状基板的以前述圆筒卷筒支承的部分照射来自前述曝光装置的光能量的动作;以及借由处理该照射的前述片状基板,于前述片状基板上形成与既定图案的形状对应的层的动作。According to a fifth aspect of the present invention, there is provided a device manufacturing method, wherein the pattern forming apparatus according to the first aspect of the present invention is an exposure apparatus for irradiating the sheet-like substrate with light energy corresponding to the shape of a predetermined pattern; and comprising: The operation of conveying the sheet-like substrate on which the photosensitive functional layer is formed on the surface in the state of being supported by a part of the cylindrical roll in the longitudinal direction; An operation of partially irradiating the light energy from the exposure device, and an operation of forming a layer corresponding to the shape of a predetermined pattern on the sheet substrate by processing the irradiated sheet substrate.
依据本发明的第6方面,提供一种基板处理装置,一边将长条的片状基板搬送于长边方向,一边于前述片状基板上依序形成既定图案,其具备:第1支承构件,轴支圆筒卷筒,该圆筒卷筒,具有从延伸于与前述长边方向交叉的方向的中心线起一定半径的圆筒状外周面,能一边以该外周面的一部分支承前述片状基板一边绕前述中心线旋转;第2支承构件,将多个图案形成部于前述片状基板的宽度方向排列保持,该图案形成部,为了于前述片状基板上形成前述图案而与前述圆筒卷筒的外周面中支承前述片状基板的部分对向配置;第1旋转机构,为了调整待形成于前述片状基板上的前述图案的倾斜而能调整前述第1支承构件与前述第2支承构件的相对角度关系;基准构件,与前述圆筒卷筒一起绕前述中心线旋转,设有用以测量前述圆筒卷筒的旋转方向或前述中心线方向的位置变化的指标;以及第1检测装置,设于前述第2支承构件侧,检测前述基准构件的指标以检测前述圆筒卷筒的旋转方向的位置变化,且检测前述第1支承构件与前述第2支承构件的相对角度变化。According to a sixth aspect of the present invention, there is provided a substrate processing apparatus that sequentially forms a predetermined pattern on the sheet substrate while conveying a long sheet substrate in the longitudinal direction, comprising: a first support member, A shaft-supported drum having a cylindrical outer peripheral surface having a predetermined radius from a center line extending in a direction intersecting the longitudinal direction, and capable of supporting the sheet-like shape with a part of the outer peripheral surface The substrate rotates around the center line, and the second support member aligns and holds a plurality of pattern forming portions in the width direction of the sheet substrate, and the pattern forming portion is formed with the cylinder in order to form the pattern on the sheet substrate. The portion of the outer peripheral surface of the reel that supports the sheet-like substrate is arranged to face each other, and the first rotating mechanism is capable of adjusting the first support member and the second support in order to adjust the inclination of the pattern to be formed on the sheet-like substrate. the relative angular relationship of the members; a reference member, which rotates around the center line together with the drum, and is provided with an index for measuring the rotation direction of the drum or the positional change in the direction of the center line; and a first detection device is provided on the side of the second support member, and detects an index of the reference member to detect a positional change in the rotational direction of the drum, and to detect a relative angle change between the first support member and the second support member.
附图说明Description of drawings
图1是显示第1实施形态的曝光装置(基板处理装置)的全体构成的图。FIG. 1 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.
图2是显示图1的曝光装置主要部分的配置的立体图。FIG. 2 is a perspective view showing the configuration of a main part of the exposure apparatus of FIG. 1 .
图3是显示在基板上的对准显微镜与描绘线的配置关系的图。FIG. 3 is a diagram showing an arrangement relationship between an alignment microscope and a drawing line on a substrate.
图4是显示图1的曝光装置的旋转卷筒及描绘装置的构成的图。It is a figure which shows the structure of the rotating drum of the exposure apparatus of FIG. 1, and a drawing apparatus.
图5是显示图1的曝光装置主要部分的配置的俯视图。FIG. 5 is a plan view showing the arrangement of main parts of the exposure apparatus of FIG. 1 .
图6是显示图1的曝光装置的分歧光学系的构成的立体图。FIG. 6 is a perspective view showing the configuration of a branched optical system of the exposure apparatus of FIG. 1 .
图7是显示图1的曝光装置的多个扫描器的配置关系的图。FIG. 7 is a diagram showing an arrangement relationship of a plurality of scanners in the exposure apparatus of FIG. 1 .
图8是显示在基板上的对准显微镜与描绘线与编码器读头的配置关系的立体图。FIG. 8 is a perspective view showing the arrangement relationship of the alignment microscope, the trace line, and the encoder head on the substrate.
图9是显示图1的曝光装置的旋转卷筒的表面构造的立体图。FIG. 9 is a perspective view showing the surface structure of the rotating drum of the exposure apparatus of FIG. 1 .
图10是显示图1的曝光装置的编码器读头的配置的俯视图。FIG. 10 is a plan view showing the configuration of an encoder head of the exposure apparatus of FIG. 1 .
图11是显示图1的曝光装置的旋转卷筒与描绘装置的配置关系的俯视图。FIG. 11 is a plan view showing an arrangement relationship between a rotating reel and a drawing device of the exposure apparatus of FIG. 1 .
图12是显示与第1实施形态的曝光装置调整方法相关的流程图。FIG. 12 is a flowchart showing the adjustment method of the exposure apparatus according to the first embodiment.
图13是显示第2实施形态的曝光装置的主要部分的配置的立体图。13 is a perspective view showing the arrangement of main parts of the exposure apparatus according to the second embodiment.
图14是显示第3实施形态的曝光装置的主要部分的配置的立体图。FIG. 14 is a perspective view showing the arrangement of the main parts of the exposure apparatus according to the third embodiment.
图15是显示第4实施形态的旋转卷筒及描绘装置的构成的图。FIG. 15 is a diagram showing the configuration of a rotating reel and a drawing device according to the fourth embodiment.
图16是显示第5实施形态的曝光装置的编码器读头的配置的俯视图。16 is a plan view showing the arrangement of the encoder head of the exposure apparatus according to the fifth embodiment.
图17是显示第6实施形态的曝光装置的标尺圆盘的配置的俯视图。17 is a plan view showing the arrangement of the scale disks of the exposure apparatus according to the sixth embodiment.
图18是显示第1~第5实施形态的元件制造方法的流程图。FIG. 18 is a flowchart showing the device manufacturing method according to the first to fifth embodiments.
符号说明Symbol Description
1 元件制造系统1 Component Manufacturing System
11 描绘装置11 Drawing device
12 基板搬送机构12 Substrate transfer mechanism
13 装置框架13 Device Frame
14 旋转位置检测机构14 Rotational position detection mechanism
16 控制装置16 Controls
21 本体框架21 ontology frame
22 三点座22 three-point seat
23 第1光学平台23 The first optical table
24 旋转机构24 Rotary Mechanism
25 第2光学平台25 2nd optical table
31 校准检测系31 Calibration detection system
44,45 XY二等分调整机构44, 45 XY bisector adjustment mechanism
51 1/2波长板51 1/2 wavelength plate
52 偏光镜52 Polarizer
53 散光器53 Diffusers
60 第1分束器60 1st beam splitter
62 第2分束器62 2nd beam splitter
63 第3分束器63 3rd beam splitter
73 第4分束器73 4th beam splitter
81 光偏向器81 Optical deflector
82 1/4波长板82 1/4 wavelength plate
83 扫描器83 Scanner
84 弯折镜84 Bending Mirror
85 f-θ透镜系85 f-θ lens system
86 Y倍率修正用光学构件86 Optical components for Y magnification correction
92 遮光板92 visor
96 反射镜96 Mirrors
97 旋转多面镜97 Rotating polygon mirror
98 原点检测器98 Origin detector
100 编码器读头EN1,EN2的安装构件100 Mounting components for encoder read heads EN1, EN2
101 编码器读头EN3,EN4的安装构件101 Encoder read head EN3, EN4 mounting components
105 旋转量测量装置105 Rotation measuring device
106 旋转机构的驱动部106 Driving part of the rotary mechanism
110 三点座的驱动部110 Drive part of three-point seat
121 X移动机构121 X Moving Mechanisms
122 Z移动机构122 Z moving mechanism
123 轴承123 Bearings
130 卷筒支承框架130 Roll Support Frame
131 卷筒旋转机构131 Reel rotation mechanism
132 卷筒支承构件132 Reel support member
141 编码器读头EN5,EN6的安装构件141 Encoder read head EN5, EN6 mounting components
P 基板P substrate
U1,U2 处理装置U1, U2 processing unit
EX 曝光装置EX exposure unit
AM1,AM2 对准显微镜AM1, AM2 Alignment Microscope
EVC 调温室EVC conditioning room
SU1,SU2 防振單元SU1, SU2 Anti-vibration unit
E 設置面E set face
EPC 边缘位置控制器EPC Edge Position Controller
RT1,RT2 张力调整滚筒RT1, RT2 Tensioning Rollers
DR 旋转卷筒DR Rotary Reel
AX2 旋转中心线AX2 Rotation Centerline
Sf2 轴部Sf2 shaft
p3 中心面p3 center plane
DL 松弛DL relaxation
UW1~UW5 描绘模组UW1~UW5 drawing module
CNT 光源装置CNT light source device
LB 描绘光束LB trace beam
I 旋转轴I Rotation axis
LL1~LL5 描绘线LL1 to LL5 trace lines
PBS 偏光分束器PBS Polarizing Beamsplitter
A7 曝光領域A7 exposure field
SL 光束分配光學系SL beam distribution optics
Le1~Le4 设置方位线Le1~Le4 set bearing line
Vw1~Vw6 观察区域Vw1~Vw6 Observation area
Ks1~Ks3 对准标记Ks1~Ks3 alignment marks
GPa,GPb 标尺部GPa, GPb scale section
EN1~EN6 编码器读头EN1~EN6 encoder read head
SD 标尺圆盘SD Ruler Disc
具体实施方式Detailed ways
针对用以实施本发明的形态(实施形态),一边参照图面一边详细说明。本发明当然不受限于以下实施形态记载的内容。另外,以下记载的构成要素中,包含发明所属技术领域中具有通常知识者容易想到、以及实质相同之物。此外,以下记载的构成要素可适当组合。另外,在不脱离本发明要旨范围内,可进行构成要素的各种省略、置换或变更。The form (embodiment) for implementing this invention is demonstrated in detail, referring drawings. It goes without saying that the present invention is not limited to the contents described in the following embodiments. In addition, the constituent elements described below include those that are easily thought of by those with ordinary knowledge in the technical field to which the invention pertains, and those that are substantially the same. In addition, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the gist of the present invention.
[第1实施形态][1st Embodiment]
图1是显示第1实施形态的曝光装置(基板处理装置)的全体构成的图。第1实施形态的基板处理装置是对基板P施以曝光处理的曝光装置EX,曝光装置EX组装在对曝光后基板P施以各种处理以制造元件的元件制造系统1中。首先,说明元件制造系统1。FIG. 1 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. The substrate processing apparatus of the first embodiment is an exposure apparatus EX that performs exposure processing on a substrate P, and the exposure apparatus EX is incorporated in a
<组件制造系统><Component manufacturing system>
元件制造系统1,是制造作为元件的可挠性显示器的生产线(可挠性显示器制造线)。可挠性显示器,例如有机EL显示器等。此元件制造系统1,是从将可挠性(flexible)基板P卷成筒状的未图示的供应用卷筒送出该基板P,在对送出的基板P连续的施以各种处理后,将处理后的基板P作为可挠性元件卷绕于未图示的回收用卷筒的所谓的卷对卷(Ro11to Ro11)方式。于第1实施形态的元件制造系统1,是将薄膜状的片状基板P从供应用卷筒送出,从供应用卷筒送出的基板P依序经处理装置U1、曝光装置EX、处理装置U2后,卷绕于回收用卷筒的例子。此处,说明元件制造系统1的处理对象的基板P。The
基板P,由例如树脂薄膜、不锈钢等的金属或合金构成的箔(foil)等。树脂薄膜的材质,可使用包含例如聚乙烯树脂、聚丙烯树脂、聚酯树脂、乙烯乙烯基共聚物树脂、聚氯乙烯树脂、纤维素树脂、聚酰胺树脂、聚酰亚胺树脂、聚碳酸酯树脂、聚苯乙烯树脂、聚乙烯醇树脂等材料中的一种或二种以上。The substrate P is made of, for example, a resin film, a foil, or the like made of a metal such as stainless steel or an alloy. As the material of the resin film, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin can be used. One or more of resins, polystyrene resins, polyvinyl alcohol resins and other materials.
基板P,以选择例如热膨胀系数显著不大、可实质忽视在对基板P实施的各种处理中因受热而产生的变形量者较佳。热膨胀系数,可借由例如将无机填充物混合于树脂薄膜据以设定为较对应处理温度等的阈值小。无机填充物,可以是例如氧化钛、氧化锌、氧化铝、氧化硅等。另外,基板P可以是以浮制法等制造的厚度100μm程度的极薄玻璃的单层体、或于此极薄玻璃贴合上述树脂薄膜、或箔等的积层体。For the substrate P, it is preferable to select, for example, a thermal expansion coefficient that is not significantly large and that can substantially ignore the amount of deformation due to heat applied to the substrate P in various treatments. The thermal expansion coefficient can be set to be smaller than a threshold value corresponding to the processing temperature or the like by, for example, mixing an inorganic filler with the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, or the like. In addition, the substrate P may be a monolayer of ultra-thin glass having a thickness of about 100 μm produced by a float method or the like, or a laminate in which the above-mentioned resin film, foil, or the like is bonded to the ultra-thin glass.
以此方式构成的基板P,被卷绕成卷筒状而成为供应用卷筒,此供应用卷筒被装着于元件制造系统1。装有供应用卷筒的元件制造系统1,对从供应用卷筒往长条方向送出的基板P反覆实行用以制造元件的各种处理。因此,处理后的基板P,成为多个元件相连的状态。也就是说,从供应用卷筒送出的基板P,为多面用的基板。此外,基板P也可以是预先借由既定前处理,将其表面予以改质而活性化、或于表面形成用以精密图案化的微细间隔壁构造(凹凸构造)。The board|substrate P comprised in this way is wound into a roll shape, and becomes the roll for supply, and this roll for supply is mounted in the
经处理后的基板P,被卷绕成卷筒状作为回收用卷筒加以回收。回收用卷筒,被安装于未图示的切割装置。装有回收用卷筒的切割装置,将处理后的基板P分割(切割)成各个元件,据以成为多个元件。基板P的尺寸,例如,宽度方向(短边的方向)的尺寸为10cm~2m程度、而长度方向(长条的方向)尺寸为10m以上。此外,基板P的尺寸不限定于上述尺寸。The processed board|substrate P is wound up in a roll shape, and is collect|recovered as the roll for collection|recovery. The reel for collection is attached to a not-shown cutting device. The dicing device equipped with the reel for collection divides (cuts) the processed board|substrate P into each element, and becomes a several element according to it. The size of the substrate P is, for example, about 10 cm to 2 m in the width direction (direction of the short side), and 10 m or more in the longitudinal direction (the direction of the long side). In addition, the size of the board|substrate P is not limited to the said size.
接着,参照图1说明元件制造系统1。元件制造系统1具备处理装置U1、曝光装置EX、以及处理装置U2。另外,图1,是X方向、Y方向及Z方向成正交的正交坐标系。X方向,是于水平面内从处理装置U1经曝光装置EX朝向处理装置U2的方向。Y方向,是于水平面内与X方向正交的方向,为基板P的宽度方向。Z方向,是与X方向及Y方向正交的方向(铅直方向)。Next, the
处理装置U1,是对于曝光装置EX进行曝光处理的基板P进行前制程的处理(前处理)。处理装置U1,将已进行前处理的基板P送向曝光装置EX。此时,被送至曝光装置EX的基板P,是其表面形成有感光性机能层(光感应层)的基板(感光基板)P。The processing apparatus U1 performs pre-process processing (pre-processing) with respect to the substrate P subjected to the exposure processing by the exposure apparatus EX. The processing apparatus U1 sends the preprocessed board|substrate P to the exposure apparatus EX. At this time, the board|substrate P sent to the exposure apparatus EX is the board|substrate (photosensitive board|substrate) P on which the photosensitive functional layer (photosensitive layer) was formed in the surface.
此处,感光性机能层是作为溶液涂于基板P上,经干燥而成为层(膜)。典型的感光性机能层有光阻剂,但作为显影处理后无需的材料,有在受紫外线照射的部分的亲拨液性经改质的感光性硅烷耦合剂材(SAM)、或受紫外线照射的部分露出镀敷还元基的感光性还元材等。作为感光性机能层使用感光性硅烷耦合剂材时,由于基板P上被紫外线曝光的图案部分由拨液性改质为亲液性,因此于成为亲液性的部分上选择性涂布导电性墨水(含有银或铜等导电性奈米粒子的墨水),以形成图案层。作为感光性机能层使用感光性还元材时,由于会在基板P上被紫外线曝光的图案部分露出镀敷还元基,因此,曝光后,立即将基板P浸渍于含钯离子等的无电镀液中一定时间,以形成(析出)钯的图案层。Here, the photosensitive functional layer is applied on the substrate P as a solution, and dried to form a layer (film). A typical photosensitive functional layer includes a photoresist, but as a material that is not required after the development treatment, there are photosensitive silane coupling agents (SAM) modified for liquid repellency in the part exposed to ultraviolet rays, or photosensitive silane coupling agents exposed to ultraviolet rays. The part of the photosensitive reducing material of the plating reducing base is exposed. When a photosensitive silane coupling agent is used as the photosensitive functional layer, since the part of the pattern exposed to ultraviolet rays on the substrate P is modified from liquid repellency to lyophilic, the conductive part is selectively coated on the part which becomes lyophilic. Ink (ink containing conductive nanoparticles such as silver or copper) to form a patterned layer. When a photosensitive reducing material is used as the photosensitive functional layer, since the plating reducing group is exposed on the pattern portion exposed to ultraviolet rays on the substrate P, immediately after the exposure, the substrate P is immersed in electroless plating containing palladium ions or the like. A certain period of time in the liquid to form (precipitate) a patterned layer of palladium.
曝光装置EX,对从处理装置U1供应的基板P描绘例如显示器用的电路或配线等的图案。详情留待后叙,此曝光装置EX,是借由将多个描绘光束LB的各个扫描于既定扫描方向所得的多个描绘线LL1~LL5对基板P进行曝光。The exposure apparatus EX draws, for example, a pattern of a circuit or wiring for a display on the substrate P supplied from the processing apparatus U1. Although the details will be described later, this exposure apparatus EX exposes the substrate P by a plurality of drawing lines LL1 to LL5 obtained by scanning each of the plurality of drawing light beams LB in a predetermined scanning direction.
处理装置U2,对在曝光装置EX进行曝光处理后的基板P进行后制程的处理(后处理)。在曝光装置EX进行曝光处理后的基板P被送至处理装置U2。处理装置U2借由对已进行曝光处理的基板P施以既定处理,以于基板P上形成电子元件的图案层。The processing apparatus U2 performs post-process processing (post-processing) on the substrate P subjected to the exposure processing by the exposure apparatus EX. The board|substrate P after exposure processing by the exposure apparatus EX is sent to processing apparatus U2. The processing apparatus U2 forms the pattern layer of an electronic element on the board|substrate P by performing predetermined processing on the board|substrate P which has performed the exposure process.
<曝光装置(基板处理装置)><Exposure apparatus (substrate processing apparatus)>
接着,参照图1至图9说明曝光装置EX。图2是显示图1的曝光装置主要部分的配置的立体图。图3是显示在基板上的对准显微镜与描绘线的配置关系的图。图4是显示图1的曝光装置的旋转卷筒及描绘装置的构成的图。图5是显示图1的曝光装置主要部分的配置的俯视图。图6是显示图1的曝光装置的分歧光学系的构成的立体图。图7是显示图1的曝光装置的多个扫描器的配置关系的图。图8是显示在基板上的对准显微镜与描绘线与编码器读头的配置关系的立体图。图9是显示图1的曝光装置的旋转卷筒表面构造的立体图。Next, the exposure apparatus EX will be described with reference to FIGS. 1 to 9 . FIG. 2 is a perspective view showing the configuration of a main part of the exposure apparatus of FIG. 1 . FIG. 3 is a diagram showing an arrangement relationship between an alignment microscope and a drawing line on a substrate. It is a figure which shows the structure of the rotating drum of the exposure apparatus of FIG. 1, and a drawing apparatus. FIG. 5 is a plan view showing the arrangement of main parts of the exposure apparatus of FIG. 1 . FIG. 6 is a perspective view showing the configuration of a branched optical system of the exposure apparatus of FIG. 1 . FIG. 7 is a diagram showing an arrangement relationship of a plurality of scanners in the exposure apparatus of FIG. 1 . FIG. 8 is a perspective view showing the arrangement relationship of the alignment microscope, the trace line, and the encoder head on the substrate. FIG. 9 is a perspective view showing the surface structure of the rotating drum of the exposure apparatus of FIG. 1 .
如图1所示,曝光装置EX,是不使用光罩的曝光装置、所谓的无光罩方式的描绘曝光装置,借由将基板P一边向搬送方向搬送、一边将描绘光束LB于既定扫描方向扫描,据以对基板P表面进行描绘,以于基板P上形成既定图案。As shown in FIG. 1 , the exposure apparatus EX is an exposure apparatus that does not use a mask, a so-called reticle-less drawing exposure apparatus, and the drawing light beam LB is moved in a predetermined scanning direction while the substrate P is conveyed in the conveying direction. By scanning, the surface of the substrate P is drawn, so as to form a predetermined pattern on the substrate P.
如图1所示,曝光装置EX具备描绘装置11、基板搬送机构12、对准显微镜AM1、AM2、以及控制装置16。描绘装置11具有多个描绘模组UW1~UW5,借由多个描绘模组UW1~UW5于被基板搬送机构12搬送的基板P的一部分描绘既定图案。基板搬送机构12,将从前制程的处理装置U1搬送而来的基板P,以既定速度往后制程的处理装置U2搬送。对准显微镜AM1、AM2,为进行待描绘于基板P上的图案与基板P的相对的位置对准(alignment),检测预先形成在基板P的对准标记等。控制装置16,控制曝光装置EX的各部分,使各部分实施处理。控制装置16可以是控制元件制造系统1的上位控制装置的一部分或全部。另外,控制装置16也可以是受上位控制装置控制的与上位控制装置不同的装置。控制装置16,例如包含计算机。As shown in FIG. 1 , the exposure apparatus EX includes a
另外,曝光装置EX具备支承描绘装置11及基板搬送机构12的装置框架13(参照图2)、以及旋转位置检测机构(参照图4及图8)14。再者,于曝光装置EX内设有射出作为描绘光束LB的雷射光(脉冲光)的光源装置CNT。此曝光装置EX,将从光源装置CNT射出的描绘光束LB在描绘装置11内导引并投射于在基板搬送机构12被搬送的基板P。Moreover, the exposure apparatus EX is provided with the apparatus frame 13 (refer FIG. 2) which supports the
如图1所示,曝光装置EX收纳在调温室EVC内。调温室EVC,通过被动或主动的防振单元SU1、SU2设置在制造工厂的设置面E。防振单元SU1、SU2设在设置面E上,用以降低来自设置面E的振动。调温室EVC,借由将内部保持于既定温度,据以抑制在内部搬送的基板P因温度造成的形状变化。As shown in FIG. 1, the exposure apparatus EX is accommodated in the temperature control room EVC. The air conditioning room EVC is installed on the installation surface E of the manufacturing plant through passive or active vibration isolation units SU1 and SU2. The anti-vibration units SU1 and SU2 are provided on the installation surface E to reduce vibration from the installation surface E. The temperature-controlled chamber EVC keeps the inside at a predetermined temperature, thereby suppressing the change in the shape of the substrate P conveyed inside due to temperature.
其次,参照图1说明曝光装置EX的基板搬送机构12。基板搬送机构12,从基板P的搬送方向上游侧起依序具有边缘位置控制器EPC、驱动滚筒DR4、张力调整滚筒RT1、旋转卷筒(圆筒卷筒)DR、张力调整滚筒RT2、驱动滚筒DR6、及驱动滚筒DR7。Next, the
边缘位置控制器EPC调整从处理装置U1搬送的基板P于宽度方向的位置。边缘位置控制器EPC,以从处理装置U1送来的基板P的宽度方向端部(边缘)位置,能相对目标位置在±十几μm~几十μm程度的范围内,而使基板P于宽度方向移动,修正基板P于宽度方向的位置。The edge position controller EPC adjusts the position in the width direction of the board|substrate P conveyed from the processing apparatus U1. The edge position controller EPC can make the width direction end (edge) position of the substrate P sent from the processing apparatus U1 within a range of about ± tens of μm to several tens of μm relative to the target position, so that the width of the substrate P can be adjusted. The direction is moved, and the position of the substrate P in the width direction is corrected.
驱动滚筒DR4,一边夹持从边缘位置控制器EPC搬送而来的基板P的正反两面一边旋转,将基板P送向搬送方向的下游侧,以将基板P往旋转卷筒DR搬送。旋转卷筒DR,一边将基板P上的图案待曝光的部分支承成圆筒面状、一边以延伸于Y方向的旋转中心线AX2为中心绕旋转中心线X2旋转,借此搬送基板P。为使此种旋转卷筒DR绕旋转中心线AX2旋转,于旋转卷筒DR的两侧设有与旋转中心线AX2同轴的轴(shaft)部Sf2。此轴部Sf2,被赋予来自未图示的驱动源(马达或减速齿轮机构等)的旋转力矩。此外,通过旋转中心线AX2且延伸于Z方向的面为中心面p3。2组张力调整滚筒RT1、RT2,对被卷绕支承于旋转卷筒DR的基板P赋予既定张力。2组驱动滚筒DR6、DR7于基板P的搬送方向相隔既定间隔配置,对曝光后的基板P赋予既定的松弛DL。借由驱动滚筒DR6夹持搬送的基板P的上游侧旋转、驱动滚筒DR7夹持搬送的基板P的下游侧旋转,据以将基板P搬送向处理装置U2。此时,基板P由于被赋予有松弛DL,因能吸收较驱动滚筒DR6在搬送方向下游侧产生的基板P的搬送速度的变动,隔绝因搬送速度的变动对基板P造成的曝光处理的影响。The drive roller DR4 rotates while sandwiching the front and back surfaces of the substrate P conveyed from the edge position controller EPC, and conveys the substrate P to the downstream side in the conveying direction to convey the substrate P to the rotary drum DR. The rotary drum DR transports the substrate P by rotating around the rotation center line X2 around the rotation center line AX2 extending in the Y direction while supporting the portion of the substrate P to be exposed with a pattern in a cylindrical surface. In order to rotate such a rotating reel DR around the rotation center line AX2, a shaft portion Sf2 coaxial with the rotation center line AX2 is provided on both sides of the rotating reel DR. The shaft portion Sf2 is given a rotational torque from a drive source (a motor, a reduction gear mechanism, etc.) not shown. In addition, the surface extending in the Z direction through the rotation center line AX2 is the center surface p3. The two sets of tension adjustment rolls RT1 and RT2 give a predetermined tension to the substrate P wound and supported by the rotating roll DR. The two sets of drive rollers DR6 and DR7 are arranged at a predetermined interval in the conveyance direction of the substrate P, and give a predetermined slack DL to the substrate P after exposure. The substrate P is conveyed to the processing apparatus U2 by the rotation of the upstream side of the board|substrate P clamped and conveyed by the drive roller DR6, and the downstream side of the drive roller DR7 of the board|substrate P clamped and conveyed by rotation. At this time, since the slack DL is given to the substrate P, the fluctuation of the conveyance speed of the substrate P generated on the downstream side of the drive roller DR6 in the conveyance direction can be absorbed, and the influence of the exposure process on the substrate P caused by the fluctuation of the conveyance speed can be blocked.
从而,基板搬送机构12,能对从处理装置U1搬送而来的基板P,借由边缘位置控制器EPC调整于宽度方向的位置。基板搬送机构12,将宽度方向的位置经调整的基板P,借由驱动滚筒DR4搬送至张力调整滚筒RT1,将通过张力调整滚筒RT1的基板P搬送至旋转卷筒DR。基板搬送机构12借由使旋转卷筒DR旋转,据以将被支承于旋转卷筒DR的基板P搬送向张力调整滚筒RT2。基板搬送机构12,将搬送至张力调整滚筒RT2的基板P搬送至驱动滚筒DR6,将搬送至驱动滚筒DR6的基板P搬送至驱动滚筒DR7。接着,基板搬送机构12借由驱动滚筒DR6及驱动滚筒DR7,一边对基板P赋予松弛DL、一边将基板P搬送向处理装置U2。Therefore, the board|
其次参照图2,说明曝光装置EX的装置框架13。图2中,X方向、Y方向及Z方向为一正交的正交坐标系,是与图1相同的正交坐标系。曝光装置EX具备图1所示的描绘装置11与支承基板搬送机构12的旋转卷筒DR的装置框架13。2, the
图2所示的装置框架13,从Z方向的下方侧依序具有本体框架21、三点座(支承机构)22、第1光学平台23、旋转机构24、以及第2光学平台25。本体框架21通过防振单元SU1、SU2设置在设置面E上。本体框架21,将旋转卷筒DR及张力调整滚筒RT1(未图示)、RT2支承成可旋转。第1光学平台23,设在旋转卷筒DR的铅直方向上方侧,通过三点座22设置于本体框架21。三点座22,将第1光学平台23以3个支承点22a支承,于各支承点22a的Z方向位置可调整。因此,三点座22可将第1光学平台23的平台面相对水平面的倾斜调整成既定倾斜。此外,于装置框架13的组装时,本体框架21与三点座22之间,可在XY面内调整于X方向及Y方向的位置。另一方面,于装置框架13的组装后,本体框架21与三点座22之间则成为被固定的状态(刚性状态)。如上述,通过三点座22连结的本体框架21与第1光学平台23发挥第1支承构件功能。The
第2光学平台25设在第1光学平台23的铅直方向上方侧,通过旋转机构24设置于第1光学平台23。第2光学平台25,其平台面与第1光学平台23的平台面平行。于第2光学平台25,设有描绘装置11的多个描绘模组UW1~UW5。旋转机构24,可在将第1光学平台23及第2光学平台25各个的平台面保持成大致平行的状态下,以延伸于铅直方向的既定旋转轴I为中心,相对第1光学平台23使第2光学平台25旋转。此旋转轴I,于中心面p3内延伸于铅直方向且通过卷绕在旋转卷筒DR的基板P表面(顺着圆周面弯曲的描绘面)内的既定点(参照图3)。旋转机构24,借由相对第1光学平台23使第2光学平台25旋转,即能调整多个描绘模组UW1~UW5相对被卷绕于旋转卷筒DR的基板P的位置。The second optical table 25 is provided on the upper side in the vertical direction of the first optical table 23 , and is provided on the first optical table 23 via the
其次,参照图1、图5说明光源装置CNT。光源装置CNT设置在装置框架13的本体框架21上。光源装置CNT,射出投射于基板p的作为描绘光束LB的雷射光。光源装置CNT具有射出适于基板P上的感光性机能层的曝光的既定波长带域的光且设定为光活性作用强的紫外区的光的光源。作为光源,可利用例如射出YAG的第三高次谐波雷射光(波长355nm)的雷射光源或借由将来自半导体雷射光源的红外波长区的种光以光纤放大器放大后借由波长转换元件(产生谐波的结晶元件等)而射出波长400nm以下的紫外波长区的雷射光的光纤放大雷射光源等。此情形下,被射出的紫外雷射光可为连续振荡,也可为每一脉冲的发光时间为几十皮秒以下且以100MHz以上的频率振荡的脉冲雷射光。除此之外,作为光源,例如也能利用具有紫外区的辉线(g线、h线、i线等)的水银灯等灯光源、于波长450nm以下的紫外区具有振荡峰值的雷射二极管、发光二极管(LED)等固态光源、或产生振荡出远紫外光(DUV光)的KrF准分子雷射光(波长248nm)、ArF准分子雷射光(波长193nm)、XeCl准分子雷射光(波长308nm)等的气体雷射光源。Next, the light source device CNT will be described with reference to FIGS. 1 and 5 . The light source device CNT is provided on the
此处,从光源装置CNT射出的描绘光束LB射入后述的偏光分束器PBS。描绘光束LB为了抑制因在偏光分束器PBS对描绘光束LB的分离产生的能量损耗,较佳为被射入的描绘光束LB成为在偏光分束器PBS大致全反射的光束。偏光分束器PBS是反射成为S偏光的直线偏光的光束,使成为P偏光的直线偏光的光束透射。因此,光源装置CNT,较佳为射入偏光分束器PBS的描绘光束LB会成为直线偏光(S偏光)的光束的雷射光。另外,雷射光由于能量密度高,因此能适当地确保投射于基板P的光束的照度。Here, the drawing light beam LB emitted from the light source device CNT is incident on the later-described polarization beam splitter PBS. In order to suppress the energy loss of the drawing light beam LB due to the separation of the drawing light beam LB by the polarization beam splitter PBS, it is preferable that the incident drawing light beam LB be substantially totally reflected by the polarization beam splitter PBS. The polarizing beam splitter PBS reflects the linearly polarized light beam that becomes S-polarized light, and transmits the linearly polarized light beam that becomes P-polarized light. Therefore, the light source device CNT is preferably a laser beam in which the drawing beam LB entering the polarization beam splitter PBS becomes a linearly polarized (S-polarized) beam. Moreover, since the energy density of laser light is high, the illuminance of the light beam projected on the board|substrate P can be suitably ensured.
其次,针对曝光装置EX的描绘装置11说明。描绘装置11是使用多个描绘模组UW1~UW5的所谓的多光束型描绘装置11。此描绘装置11,将从光源装置CNT射出的描绘光束LB分歧为多条,并将分歧的多个描绘光束LB沿着基板P上的多条(第1实施形态中例如为5条)描绘线LL1~LL5分别加以扫描。接着,描绘装置11,将以多条描绘线LL1~LL5的各个在基板P上描绘的图案彼此于基板P的宽度方向加以接合。首先,参照图3,说明以描绘装置11扫描多个描绘光束LB据以在基板P上形成的多条描绘线LL1~LL5。Next, the
如图3所示,多条描绘线LL1~LL5,夹着中心面p3于旋转卷筒DR的周方向配置成2行。于旋转方向上游侧的基板P上,配置奇数号的第1描绘线LL1、第3描绘线LL3及第5描绘线LL5。于旋转方向下游侧的基板P上,配置偶数号的第2描绘线LL2及第4描绘线LL4。As shown in FIG. 3 , the plurality of drawing lines LL1 to LL5 are arranged in two rows in the circumferential direction of the rotary reel DR with the center plane p3 interposed therebetween. On the substrate P on the upstream side in the rotational direction, odd-numbered first drawing lines LL1 , third drawing lines LL3 , and fifth drawing lines LL5 are arranged. On the substrate P on the downstream side in the rotational direction, even-numbered second drawing lines LL2 and fourth drawing lines LL4 are arranged.
各描绘线LL1~LL5于基板P的宽度方向(Y方向)、也就是沿旋转卷筒DR的旋转中心线AX2形成,较基板P于宽度方向的长度短。严谨来说,各描绘线LL1~LL5,为在借由基板搬送机构12以基准速度搬送基板P时,以多条描绘线LL1~LL5所得的图案的接合误差为最小的方式,相对旋转卷筒DR的旋转中心线AX2倾斜既定角度量。The respective drawing lines LL1 to LL5 are formed in the width direction (Y direction) of the substrate P, that is, along the rotation center line AX2 of the rotary reel DR, and are shorter than the length of the substrate P in the width direction. Strictly speaking, each of the drawing lines LL1 to LL5 is used to rotate the reel so as to minimize the joining error of the pattern obtained by the plurality of drawing lines LL1 to LL5 when the substrate P is conveyed at the reference speed by the
奇数号的第1描绘线LL1、第3描绘线LL3及第5描绘线LL5,于旋转卷筒DR的旋转中心线AX2延伸的方向(轴方向)相距既定间隔配置。另外,偶数号的第2描绘线LL2及第4描绘线LL4,于旋转卷筒DR的轴方向相距既定间隔配置。此时,第2描绘线LL2于轴方向配置在第1描绘线LL1与第3描绘线LL3之间。同样的,第3描绘线LL3于轴方向配置在第2描绘线LL2与第4描绘线LL4之间。第4描绘线LL4于轴方向配置在第3描绘线LL3与第5描绘线LL5之间。此外,第1~第5描绘线LL1~LL5配置成涵盖描绘于基板P上的曝光区域A7的宽度方向(轴方向)全宽。The odd-numbered first drawing line LL1 , the third drawing line LL3 , and the fifth drawing line LL5 are arranged at predetermined intervals in the direction (axial direction) in which the rotation center line AX2 of the rotary reel DR extends. In addition, the even-numbered second drawing line LL2 and the fourth drawing line LL4 are arranged at a predetermined interval in the axial direction of the rotating reel DR. At this time, the second drawing line LL2 is arranged between the first drawing line LL1 and the third drawing line LL3 in the axial direction. Similarly, the third drawing line LL3 is arranged between the second drawing line LL2 and the fourth drawing line LL4 in the axial direction. The fourth drawing line LL4 is arranged between the third drawing line LL3 and the fifth drawing line LL5 in the axial direction. Moreover, the 1st - 5th drawing lines LL1-LL5 are arrange|positioned so that the width direction (axial direction) full width of the exposure area A7 drawn on the board|substrate P may be covered.
沿着奇数号的第1描绘线LL1、第3描绘线LL3及第5描绘线LL5扫描的描绘光束LB的扫描方向为一维方向、相同方向。另外,沿偶数号的第2描绘线LL2及第4描绘线LL4扫描的描绘光束LB的扫描方向为一维方向、相同方向。此时,沿奇数号描绘线LL1、LL3、LL5扫描的描绘光束LB的扫描方向与沿偶数号描绘线LL2、LL4扫描的描绘光束LB的扫描方向为相反方向。因此,从基板P的搬送方向来看,奇数号描绘线LL1、LL3、LL5的描绘开始位置与偶数号描绘线LL2、LL4的描绘结束位置相邻接,同样的,奇数号描绘线LL1、LL3、LL5的描绘结束位置与偶数号描绘线LL2、LL4的描绘开始位置相邻接。The scanning direction of the drawing light beam LB scanned along the odd-numbered first drawing line LL1 , the third drawing line LL3 , and the fifth drawing line LL5 is a one-dimensional direction and the same direction. In addition, the scanning direction of the drawing light beam LB scanned along the even-numbered second drawing line LL2 and the fourth drawing line LL4 is a one-dimensional direction and the same direction. At this time, the scanning direction of the drawing light beam LB scanned along the odd-numbered drawing lines LL1, LL3, LL5 and the scanning direction of the drawing light beam LB scanned along the even-numbered drawing lines LL2, LL4 are opposite directions. Therefore, when viewed from the conveying direction of the substrate P, the drawing start positions of the odd-numbered drawing lines LL1, LL3, and LL5 are adjacent to the drawing end positions of the even-numbered drawing lines LL2, LL4. Similarly, the odd-numbered drawing lines LL1, LL3 The drawing end position of LL5 is adjacent to the drawing start position of the even-numbered drawing lines LL2 and LL4.
其次,参照图4至图7说明描绘装置11。描绘装置11,具有上述多个描绘模组UW1~UW5、将来自光源装置CNT的描绘光束LB分歧而导至多个描绘模组UW1~UW5的光束分配光学系SL、以及用以进行校准的校准检测系31。Next, the
光束分配光学系SL将从光源装置CNT射出的描绘光束LB分歧为多条,并将分歧的多条描绘光束LB分别导向多个描绘模组UW1~UW5。光束分配光学系SL,具有将从光源装置CNT射出的描绘光束LB分歧为2条的第1光学系41、以第1光学系41分歧的一描绘光束LB所照射的第2光学系42、及以第1光学系41分歧的另一描绘光束LB所照射的第3光学系43。另外,光束分配光学系SL,包含XY二等分(halving)调整机构44、以及XY二等分调整机构45。光束分配光学系SL,其光源装置CNT侧的一部分设置于本体框架21,另一方面,描绘模组UW1~UW5侧的另一部分则设置于第2光学平台25。The beam distribution optical system SL branches the drawing light beam LB emitted from the light source device CNT into a plurality of pieces, and guides the branched drawing light beam LB to the plurality of drawing modules UW1 to UW5, respectively. The beam distribution optical system SL has a first
第1光学系41,具有1/2波长板51、偏光镜52、散光器(beam diffuser)53、第1反射镜54、第1中继透镜55、第2中继透镜56、第2反射镜57、第3反射镜58、第4反射镜59、以及第1分束器60。The first
从光源装置CNT往+X方向射出的描绘光束LB照射于1/2波长板51。1/2波长板51在描绘光束LB的照射面内可旋转。照射于1/2波长板51的描绘光束LB,其偏光方向为对应1/2波长板51的旋转量的既定偏光方向。通过1/2波长板51的描绘光束LB照射于偏光镜(偏光分束器)52。偏光镜52使成为既定偏光方向的描绘光束LB穿透,另一方面将既定偏光方向以外的描绘光束LB反射向+Y方向。因此,以偏光镜52反射的描绘光束LB,由于通过1/2波长板51,因此可借由1/2波长板51及偏光镜52的协同动作,而成为与1/2波长板51的旋转量对应的光束强度。也就是说,使1/2波长板51旋转,以使描绘光束LB的偏光方向变化,借此能调整在偏光镜52反射的描绘光束LB的光束强度。The half-
穿透过偏光镜52的描绘光束LB照射于散光器53。散光器53吸收描绘光束LB,抑制照射于散光器53的描绘光束LB往外部的泄漏。被偏光镜52反射向+Y方向的描绘光束LB照射于第1反射镜54。照射于第1反射镜54的描绘光束LB,被第1反射镜54反射向+X方向,经由第1中继透镜55及第2中继透镜56照射于第2反射镜57。照射于第2反射镜57的描绘光束LB,被第2反射镜57反射向-Y方向而照射于第3反射镜58。照射于第3反射镜58的描绘光束LB,被第3反射镜58反射向-Z方向而照射于第4反射镜59。照射于第4反射镜59的描绘光束LB,被第4反射镜59反射向+Y方向而照射于第1分束器60。照射于第1分束器60的描绘光束LB,其一部分被反射往-X方向而照射于第2光学系42,其另一部分透射而照射于第3光学系43。The drawing light beam LB transmitted through the
第3反射镜58与第4反射镜59在旋转机构24的旋转轴I上相距既定间隔设置。另外,至包含第3反射镜58的光源装置CNT为止的构成(在图4的Z方向上方侧,以双点划线围绕的部分)设于本体框架21侧,至包含第4反射镜59的多个描绘模组UW1~UW5为止的构成(在图4的Z方向下方侧,以双点划线围绕的部分)设于第2光学平台25侧。因此,即使以旋转机构24使第2光学平台25相对第1光学平台23旋转,由于在旋转轴I上设有第3反射镜58与第4反射镜59,因此描绘光束LB的光路不会变更。从而,即使以旋转机构24使第2光学平台25相对第1光学平台23旋转,也能将从设置在本体框架21侧的光源装置CNT射出的描绘光束LB,非常合适地引导向设置在第2光学平台25侧的多个描绘模组UW1~UW5。The
第2光学系42,将于第1光学系41分歧的一方的描绘光束LB,分歧导向后述的奇数号描绘模组UW1、UW3、UW5。第2光学系42,具有第5反射镜61、第2分束器62、第3分束器63、以及第6反射镜64。The second
于第1光学系41的第1分束器60被反射向-X方向的描绘光束LB,照射于第5反射镜61。照射于第5反射镜61的描绘光束LB,被第5反射镜61反射向-Y方向,而照射于第2分束器62。照射于第2分束镜62的描绘光束LB,其一部分被反射而照射于奇数号的1个描绘模组UW5(参照图5)。照射于第2分束器62的描绘光束LB,其他一部分穿透而照射于第3分束器63。照射于第3分束器63的描绘光束LB,其一部分被反射而照射于奇数号的1个描绘模组UW3(参照图5)。照射于第3分束器63的描绘光束LB,其他一部分穿透而照射于第6反射镜64。照射于第6反射镜64的描绘光束LB被第6反射镜64反射而照射于奇数号的1个描绘模组UW1(参照图5)。此外,于第2光学系42,照射于奇数号描绘模组UW1、UW3、UW5的描绘光束LB,相对-Z方向(Z轴)略微倾斜。The drawing light beam LB in the −X direction is reflected by the
第3光学系43将于第1光学系41分歧的另一方的描绘光束LB,分歧导向后述的偶数号描绘模组UW2、UW4。第3光学系43,具有第7反射镜71、第8反射镜72、第4分束器73、以及第9反射镜74。The third
于第1光学系41的第1分束器60往Y方向穿透的描绘光束LB,照射于第7反射镜71。照射于第7反射镜71的描绘光束LB,被第7反射镜71反射向X方向,照射于第8反射镜72。照射于第8反射镜72的描绘光束LB,被第8反射镜72反射向-Y方向,照射于第4分束器73。照射于第4分束器73的描绘光束LB,其一部分被反射而照射于偶数号的1个描绘模组UW4(参照图5)。照射于第4分束器73的描绘光束LB,其他一部分穿透而照射于第9反射镜74。照射于第9反射镜74的描绘光束LB,被第9反射镜74反射而照射于偶数号的1个描绘模组UW2。此外,于第3光学系43,照射于偶数号描绘模组UW2、UW4的描绘光束LB,也是相对-Z方向(Z轴)略微倾斜。The drawing light beam LB transmitted in the Y direction through the
如以上所述,于光束分配光学系SL,朝向多个描绘模组UW1~UW5,将来自光源装置CNT的描绘光束LB分歧为多条。此时,第1分束器60、第2分束器62、第3分束器63及第4分束器73,其反射率(穿透率)视描绘光束LB的分歧数调整为适当的反射率,以使照射于多个描绘模组UW1~UW5的描绘光束LB的光束强度为相同强度。As described above, in the beam distribution optical system SL, the drawing light beams LB from the light source device CNT are branched into a plurality of lines toward the plurality of drawing modules UW1 to UW5. At this time, the reflectance (transmittance) of the
XY二等分调整机构44,配置在第2中继透镜56与第2反射镜57之间。XY二等分调整机构44可将形成于基板P上的描绘线LL1~LL5全部在基板P的描绘面内微幅移动地调整。XY二等分调整机构44以能在图6的XZ面内倾斜的透明平行平板玻璃与能在图6的YZ面内倾斜的透明平行平板玻璃构成。借由调整该两片平行平板玻璃的各倾斜量,而能使形成于基板P上的描绘线LL1~LL5在X方向或Z方向微幅位移。The XY
XY二等分调整机构45,配置在第7反射镜71与第8反射镜72之间。XY二等分调整机构45可将形成于基板P上的描绘线LL1~LL5中的偶数号的第2描绘线LL2及第4描绘线LL4在基板P的描绘面内微幅移动地调整。XY二等分调整机构45与XY二等分调整机构44同样地,以能在图6的XZ面内倾斜的透明平行平板玻璃与能在图6的YZ面内倾斜的透明平行平板玻璃构成。借由调整该两片平行平板玻璃的各倾斜量,而能使形成于基板P上的描绘线LL2、LL4在X方向或Z方向微幅位移。The XY
接着,参照图4、图5及图7,说明多个描绘模组UW1~UW5。多个描绘模组UW1~UW5对应多条描绘线LL1~LL5设置。借由光束分配光学系SL而分歧的多条描绘光束LB分别照射于多个描绘模组UW1~UW5。各描绘模组UW1~UW5,使多条描绘光束LB分别导至各描绘线LL1~LL5。也即,第1描绘模组UW1将描绘光束LB导至第1描绘线LL1,同样地,第2~5描绘模组UW2~UW5将描绘光束LB导至第2~第5描绘线LL2~LL5。如图4(及图1)所示,多个描绘模组UW1~UW5夹着中心面p3于旋转卷筒DR的周方向配置成2行。多个描绘模组UW1~UW5,于夹着中心面p3配置第1、第3、第5描绘线LL1、LL3、LL5侧(图5的-X方向侧),配置第1描绘模组UW1、第3描绘模组UW3及第5描绘模组UW5。第1描绘模组UW1、第3描绘模组UW3及第5描绘模组UW5,于Y方向相距既定间隔配置。另外,多个描绘模组UW1~UW5,于夹着中心面p3配置第2、第4描绘线LL2、LL4侧(图5的+X方向侧),配置第2描绘模组UW2及第4描绘模组UW4。第2描绘模组UW2及第4描绘模组UW4于Y方向相隔既定间隔配置。此时,第2描绘模组UW2,于Y方向配置在第1描绘模组UW1与第3描绘模组UW3之间。同样的,第3描绘模组UW3,于Y方向配置在第2描绘模组UW2与第4描绘模组UW4之间。第4描绘模组UW4,于Y方向配置在第3描绘模组UW3与第5描绘模组UW5之间。另外,如图4所示,第1描绘模组UW1、第3描绘模组UW3及第5描绘模组UW5与第2描绘模组UW2及第4描绘模组UW4,从Y方向看,是以中心面p3为中心对称配置。Next, a plurality of drawing modules UW1 to UW5 will be described with reference to FIGS. 4 , 5 and 7 . The plurality of drawing modules UW1 to UW5 are provided corresponding to the plurality of drawing lines LL1 to LL5. The plurality of drawing light beams LB branched by the beam distribution optical system SL are respectively irradiated on the plurality of drawing modules UW1 to UW5 . Each of the drawing modules UW1 to UW5 guides the plurality of drawing light beams LB to the drawing lines LL1 to LL5, respectively. That is, the first drawing module UW1 guides the drawing light beam LB to the first drawing line LL1, and similarly, the second to fifth drawing modules UW2 to UW5 guide the drawing light beam LB to the second to fifth drawing lines LL2 to LL5 . As shown in FIG. 4 (and FIG. 1 ), the plurality of drawing modules UW1 to UW5 are arranged in two rows in the circumferential direction of the rotary drum DR with the center plane p3 interposed therebetween. The plurality of drawing modules UW1 to UW5 are arranged on the side of the first, third, and fifth drawing lines LL1, LL3, and LL5 (the -X direction side in FIG. 5 ) across the center plane p3, and the first drawing modules UW1, The third drawing module UW3 and the fifth drawing module UW5. The first drawing module UW1, the third drawing module UW3, and the fifth drawing module UW5 are arranged at a predetermined interval in the Y direction. In addition, among the plurality of drawing modules UW1 to UW5, the second and fourth drawing lines LL2 and LL4 are arranged on the side of the second and fourth drawing lines LL2 and LL4 (the side in the +X direction in FIG. 5 ) across the center plane p3, and the second drawing module UW2 and the fourth drawing module are arranged. Module UW4. The second drawing module UW2 and the fourth drawing module UW4 are arranged at a predetermined interval in the Y direction. At this time, the second drawing module UW2 is arranged between the first drawing module UW1 and the third drawing module UW3 in the Y direction. Similarly, the third drawing module UW3 is arranged between the second drawing module UW2 and the fourth drawing module UW4 in the Y direction. The fourth drawing module UW4 is arranged between the third drawing module UW3 and the fifth drawing module UW5 in the Y direction. In addition, as shown in FIG. 4 , the first drawing module UW1, the third drawing module UW3, the fifth drawing module UW5, the second drawing module UW2 and the fourth drawing module UW4, when viewed from the Y direction, are The center plane p3 is centrally symmetric.
其次,参照图4说明各描绘模组UW1~UW5。另外,由于各描绘模组UW1~UW5为相同构成,因此以第1描绘模组UW1(以下,仅称描绘模组UW1)为例加以说明。Next, each of the drawing modules UW1 to UW5 will be described with reference to FIG. 4 . In addition, since each of the drawing modules UW1 to UW5 has the same configuration, the first drawing module UW1 (hereinafter, simply referred to as the drawing module UW1 ) will be described as an example.
图4所示的描绘模组UW1,为沿描绘线LL1(第1描绘线LL1)扫描描绘光束LB,而具备光偏向器81、偏光分束器PBS、1/4波长板82、扫描器83、弯折镜84、远心的f-θ透镜系85、以及Y倍率修正用光学构件86。另外,与偏向分束器PBS相邻设有校准检测系31。The drawing module UW1 shown in FIG. 4 includes a
光偏向器81,是使用例如声光调变元件(AOM:AcoustIic Optic Modulator)。光偏向器81,借由控制装置16而被切换成ON/OFF,以高速地切换描绘光束LB对基板P的投射/非投射。具体而言,来自光束分配光学系SL的描绘光束LB,通过第2光学系42的中继透镜91相对-Z方向略微倾斜的照射于光偏向器81。在光偏向器81被切换至OFF时,描绘光束LB即以倾斜状态直进,而被设在通过光偏向器81之后的遮光板92遮光。另一方面,在光偏向器81被切换至ON时,射入光偏向器81的描绘光束LB成为一次绕射光束而往-Z方向偏向,从光偏向器81射出而射入设在光偏向器81的Z方向上的偏光分束器PBS。因此,在光偏向器81被切换至ON时,将描绘光束LB投射于基板P,在被切换至OFF时,使描绘光束LB对基板P成为非投射状态。As the
偏光分束器PBS反射从光偏向器81通过中继透镜93照射的描绘光束LB。另一方面,偏光分束器PBS与设在偏光分束器PBS与扫描器83之间的1/4波长板82协同动作,穿透借由描绘光束LB(点光)的照射在基板P(或旋转卷筒DR的外周面)产生的反射光。也就是说,从光偏向器81照射于偏光分束器PBS的描绘光束LB是S偏光的直线偏光的雷射光,被偏光分束器PBS反射。另外,被偏光分束器PBS反射的描绘光束LB,通过1/4波长板82而照射于基板P,并从基板P再度通过1/4波长板82,借此成为P偏光的直线偏光的雷射光。因此,从基板P(或旋转卷筒DR的外周面)产生并照射于偏光分束器PBS的反射光穿透偏光分束器PBS。此外,穿透偏光分束器PBS的反射光,通过中继透镜94照射于校准检测系31。另一方面,在偏光分束器PBS反射的描绘光束LB,通过1/4波长板82而射入扫描器83。The polarizing beam splitter PBS reflects the drawing light beam LB irradiated from the
如图4及图7所示,扫描器83具有反射镜96、旋转多面镜97、与原点检测器98。通过1/4波长板82的描绘光束LB,通过中继透镜95照射于反射镜96。在反射镜96反射的描绘光束LB照射于旋转多面镜97。旋转多面镜97包含延伸于Z方向的旋转轴97a、与形成在旋转轴97a周围的多个反射面(例如八面)97b而构成。旋转多面镜97,借由以旋转轴97a为中心往既定旋转方向旋转,据以使照射于反射面97b的描绘光束LB的反射角连续变化,借此,使反射的描绘光束LB沿基板P上的描绘线LL1扫描。在旋转多面镜97反射的描绘光束LB照射于弯折镜84。原点检测器98检测沿基板P的描绘线LL1扫描的描绘光束LB的原点。原点检测器98,隔着于各反射面97b反射的描绘光束LB,配置在反射镜96的相反侧。因此,原点检测器98检测出照射于f-θ透镜系85前的描绘光束LB。也就是说,原点检测器98,是在照射于基板P上的描绘线LL1的描绘开始位置前一刻的时点检测出描绘光束LB的通过。As shown in FIGS. 4 and 7 , the
从扫描器83照射于弯折镜84的描绘光束LB被弯折镜84反射而照射于f-θ透镜系85。f-θ透镜系85包含远心f-θ透镜,使通过弯折镜84而从旋转多面镜97反射的描绘光束LB垂直地投射于基板P的描绘面。此时,以旋转多面镜97的各反射面97b与基板P的描绘面在与描绘线LL1正交的副扫描方向(基板P的长度方向)成光学共轭的方式,于射向旋转多面镜97的描绘光束LB的光路中与从f-θ透镜系85射出的描绘光束LB的光路中分别配置有圆筒透镜(未图示),也设有与f-θ透镜系85协同动作的面歪斜(optical face tangle error)修正光学系。The drawing light beam LB irradiated to the bending
如图7所示,多个描绘模组UW1~UW5中的多个扫描器83相对中心面p3成左右对称构成。多个扫描器83,其与描绘模组UW1、UW3、UW5对应的3个扫描器83配置在旋转卷筒DR的旋转方向上游侧(图7的-X方向侧),与描绘模组UW2、UW4对应的2个扫描器83则配置在旋转卷筒DR的旋转方向下游侧(图7的+X方向侧)。而上游侧的3个扫描器83与下游侧的2个扫描器83夹着中心面p3对向配置。此时,配置于上游侧的各扫描器83与配置于下游侧的各扫描器83以旋转轴I为中心成为180°点对称的构成。因此,在上游侧的3个旋转多面镜97一边向左(在XY面内逆时针)旋转、一边对旋转多面镜97照射描绘光束LB后,被旋转多面镜97反射的描绘光束LB,即从描绘开始位置朝向描绘结束位置往既定扫描方向(例如图7的+Y方向)扫描。另一方面,在下游侧的2个旋转多面镜97一边向左旋转、一边对旋转多面镜97照射描绘光束LB后,被旋转多面镜97反射的描绘光束LB,即从描绘开始位置朝向描绘结束位置,往与上游侧的3个旋转多面镜97相反的扫描方向(例如图7的-Y方向)扫描。As shown in FIG. 7 , the plurality of
此处,于图4的XZ面内观察时,从奇数号描绘模组UW1、UW3、UW5到达基板P的描绘光束LB的轴线,是与设置方位线Le1一致的方向。也就是说,设置方位线Le1,于XZ面内,是连结奇数号描绘线LL1、LL3、LL5与旋转中心线AX2的线。同样的,于图4的XZ面内观察时,从偶数号描绘模组UW2、UW4到达基板P的描绘光束LB的轴线,与设置方位线Le2一致的方向。也就是说,设置方位线Le2,于XZ面内,是连结偶数号描绘线LL2、LL4与旋转中心线AX2的线。Here, when viewed in the XZ plane of FIG. 4 , the axis of the drawing light beam LB reaching the substrate P from the odd-numbered drawing modules UW1 , UW3 , and UW5 is the direction that matches the installation azimuth line Le1 . That is, the azimuth line Le1 is provided and is a line connecting the odd-numbered drawing lines LL1 , LL3 , and LL5 and the rotation center line AX2 in the XZ plane. Similarly, when viewed in the XZ plane of FIG. 4 , the axis of the drawing light beam LB reaching the substrate P from the even-numbered drawing modules UW2 and UW4 is in the same direction as the setting azimuth line Le2 . That is, the azimuth line Le2 is provided, and in the XZ plane, is a line connecting the even-numbered drawing lines LL2 and LL4 and the rotation center line AX2.
Y倍率修正用光学构件86,配置在f-θ透镜系85与基板P之间。Y倍率修正用光学构件86,使以各描绘模组UW1~UW5形成的描绘线LL1~LL5的Y方向尺寸微幅放大或缩小。The
以此方式构成的描绘装置11,由控制装置16控制各部以于基板P上描绘既定图案。也就是说,控制装置16,在投射于基板P的描绘光束LB往扫描方向扫描的期间中,根据待描绘于基板P的图案的CAD(Computer Aided Design)信息(例如点阵形式),借由对光偏向器81进行ON/OFF调变据以使描绘光束LB偏向,以于基板P的光感应层上描绘出图案。另外,控制装置16使沿描绘线LL1扫描的描绘光束LB的扫描方向、与基板P借由旋转卷筒DR的旋转而往搬送方向的移动同步,据以在曝光区域A7中对应描绘线LL1的部分描绘既定图案。In the
此时,将从各描绘模组UW1~UW5投射的描绘光束LB在基板P上的尺寸(点径)设为D(μm),将沿着描绘光束LB的描绘线LL1~LL5的扫描速度设为V(μm/秒)时,在光源装置CNT为脉冲雷射光源的情形下,将脉冲光的发光反覆周期T(秒)设为T<D/V的关系。At this time, the size (spot diameter) of the drawing light beams LB projected from the respective drawing modules UW1 to UW5 on the substrate P is set to D (μm), and the scanning speeds along the drawing lines LL1 to LL5 of the drawing light beams LB are set to be In the case of V (μm/sec), when the light source device CNT is a pulsed laser light source, the light emission repetition period T (sec) of the pulsed light is set as a relationship of T<D/V.
其次,参照图3及图8,说明对准显微镜AM1、AM2。对准显微镜AM1、AM2检测预先形成在基板P上的对准标记、或形成在旋转卷筒DR上的基准标记及基准图案等。以下,将基板P的对准标记及旋转卷筒DR的基准标记及基准图案,仅简称为标记。对准显微镜AM1、AM2用于进行基板P与描绘在基板P上的既定图案的位置对齐(对准)、或旋转卷筒DR与描绘装置11的校准。Next, the alignment microscopes AM1 and AM2 will be described with reference to FIGS. 3 and 8 . The alignment microscopes AM1 and AM2 detect the alignment marks formed on the substrate P in advance, the reference marks and reference patterns formed on the rotating reel DR, and the like. Hereinafter, the alignment mark of the board|substrate P and the reference mark and reference pattern of the rotating roll DR are simply called a mark. The alignment microscopes AM1 and AM2 are used for alignment (alignment) of the substrate P with a predetermined pattern drawn on the substrate P, or alignment of the rotating roll DR and the
对准显微镜AM1、AM2,较以描绘装置11形成的描绘线LL1~LL5,设置在旋转卷筒DR的旋转方向上游侧。另外,对准显微镜AM1较对准显微镜AM2配置在旋转卷筒DR的旋转方向上游侧。The alignment microscopes AM1 and AM2 are provided on the upstream side in the rotational direction of the rotating reel DR than the drawing lines LL1 to LL5 formed by the
对准显微镜AM1、AM2,由将照明光投射于基板P或旋转卷筒DR并射入标记产生的光的作为检测探针的对物透镜系GA、以及将通过对物透镜系GA受光的标记的像(亮视野像、暗视野像、荧光像等)以二维CCD、CMOS等加以拍摄的摄影系GD等构成。此外,对准用的照明光是对基板P上的光感应层几乎不具有感度的波长带域的光、例如波长500nm~800nm程度的光。The microscopes AM1 and AM2 are aligned, and the objective lens system GA as the detection probe is the light generated by projecting the illumination light on the substrate P or the rotating reel DR and incident on the mark, and the mark that receives the light through the objective lens system GA The images (bright-field images, dark-field images, fluorescent images, etc.) are composed of a photographic system GD, etc., which is captured by a two-dimensional CCD, CMOS, and the like. In addition, the illumination light for alignment is light of the wavelength band which has little sensitivity with respect to the photosensitive layer on the board|substrate P, for example, the light of the wavelength of about 500 nm - 800 nm.
对准显微镜AM1于Y方向(基板P的宽度方向)排成一行设有多个(例如3个)。同样的,对准显微镜AM2于Y方向(基板P的宽度方向)排成一行设有多个(例如3个)。也就是说,对准显微镜AM1、AM2合计设有6个。A plurality of (for example, three) alignment microscopes AM1 are arranged in a line in the Y direction (the width direction of the substrate P). Similarly, a plurality of (for example, three) alignment microscopes AM2 are arranged in a line in the Y direction (the width direction of the substrate P). That is, a total of six alignment microscopes AM1 and AM2 are provided.
图3中,为易于理解,于6个对准显微镜AM1、AM2的各对物透镜系GA中,显示3个对准显微镜AM1的各对物透镜系GA1~GA3的配置。3个对准显微镜AM1的各对物透镜系GA1~GA3对基板P(或旋转卷筒DR的外周面)上的观察区域Vw1~Vw3,如图3所示,是在与旋转中心线AX2平行的Y方向以既定间隔配置。如图8所示,通过各观察区域Vw1~Vw3中心的各对物透镜系GA1~GA3的光轴La1~La3,均与XZ面平行。同样的,3个对准显微镜AM2的各对物透镜系GA对基板P(或旋转卷筒DR的外周面)上的观察区域Vw4~Vw6,如图3所示,在与旋转中心线AX2平行的Y方向以既定间隔配置。如图8所示,通过各观察区域Vw4~Vw6中心的各对物透镜系GA的光轴La4~La6,也均与XZ面平行。而观察区域Vw1~Vw3与观察区域Vw4~Vw6,是于旋转卷筒DR的旋转方向以既定间隔配置。In FIG. 3 , in order to facilitate understanding, the arrangement of each pair of objective lens systems GA1 to GA3 of three alignment microscopes AM1 is shown in each pair of objective lens systems GA of six alignment microscopes AM1 and AM2. The observation areas Vw1 to Vw3 on the substrate P (or the outer peripheral surface of the rotating drum DR) of each pair of objective lenses GA1 to GA3 of the three alignment microscopes AM1 are, as shown in FIG. 3, parallel to the rotation center line AX2. are arranged at predetermined intervals in the Y direction. As shown in FIG. 8 , the optical axes La1 to La3 of the respective pairs of objective lens systems GA1 to GA3 passing through the centers of the respective observation areas Vw1 to Vw3 are all parallel to the XZ plane. Similarly, the observation areas Vw4 to Vw6 on the substrate P (or the outer peripheral surface of the rotating drum DR) of each pair of objective lens systems GA of the three alignment microscopes AM2 are parallel to the rotation center line AX2 as shown in FIG. 3 . are arranged at predetermined intervals in the Y direction. As shown in FIG. 8 , the optical axes La4 to La6 of the respective pairs of objective lens systems GA passing through the centers of the respective observation areas Vw4 to Vw6 are also parallel to the XZ plane. On the other hand, the observation areas Vw1 to Vw3 and the observation areas Vw4 to Vw6 are arranged at predetermined intervals in the rotation direction of the rotating reel DR.
此对准显微镜AM1、AM2对标记的观察区域Vw1~Vw6,是于基板P及旋转卷筒DR上,例如设定在200μm对角程度的范围。此处,对准显微镜AM1的光轴La1~La3、也即对物透镜系GA的光轴La1~La3,设定成与从旋转中心线AX2延伸于旋转卷筒DR的径方向的设置方位线Le3相同方向。也就是说,设置方位线Le3,于图4的XZ面内观察时,是连结对准显微镜AM1的观察区域Vw1~Vw3与旋转中心线AX2的线。同样的,对准显微镜AM2的光轴La4~La6、也即对物透镜系GA的光轴La4~La6,设定成与从旋转中心线AX2延伸于旋转卷筒DR的径方向的设置方位线Le4相同方向。也就是说,设置方位线Le4,于图4的XZ面内观察时,是连结对准显微镜AM2的观察区域Vw4~Vw6与旋转中心线AX2的线。此时,对准显微镜AM1由于与对准显微镜AM2相较是配置在旋转卷筒DR的旋转方向上游侧,因此中心面p3与设置方位线Le3所成的角度,较中心面p3与设置方位线Le4所成的角度大。The observation areas Vw1 to Vw6 of the marks with the alignment microscopes AM1 and AM2 are set in the range of, for example, about 200 μm diagonally on the substrate P and the rotating roll DR. Here, the optical axes La1 to La3 of the alignment microscope AM1, that is, the optical axes La1 to La3 of the objective lens system GA, are set to the installation azimuth lines extending from the rotation center line AX2 in the radial direction of the rotary drum DR. Le3 in the same direction. That is, the azimuth line Le3 is provided and is a line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2 when viewed in the XZ plane of FIG. 4 . Similarly, the optical axes La4 to La6 of the alignment microscope AM2, that is, the optical axes La4 to La6 of the objective lens system GA, are set to the installation azimuth lines extending from the rotation center line AX2 in the radial direction of the rotary drum DR. Le4 in the same direction. That is, the azimuth line Le4 is provided and is a line connecting the observation areas Vw4 to Vw6 of the alignment microscope AM2 and the rotation center line AX2 when observed in the XZ plane of FIG. 4 . At this time, since the alignment microscope AM1 is disposed on the upstream side in the rotational direction of the rotating reel DR compared to the alignment microscope AM2, the angle formed by the center plane p3 and the installation azimuth line Le3 is closer than the center plane p3 and the installation azimuth line The angle formed by Le4 is large.
于基板P上,如图3所示,以5条描绘线LL1~LL5的各个描绘的曝光区域A7,于X方向相距既定间隔配置。于基板P上的曝光区域A7周围,有用以进行位置对准的多个对准标记Ks1~Ks3(以下,简称标记),例如形成为十字状。On the board|substrate P, as shown in FIG. 3, the exposure area A7 drawn by each of five drawing lines LL1-LL5 is arrange|positioned at predetermined intervals in the X direction. Around the exposure area A7 on the substrate P, there are a plurality of alignment marks Ks1 to Ks3 (hereinafter, simply referred to as marks) for alignment, which are formed in, for example, a cross shape.
图3中,标记Ks1是在曝光区域A7的-Y侧周边区域于X方向以一定间隔设置,标记Ks3在曝光区域A7的+Y侧周边区域于X方向以一定间隔设置。进一步的,标记Ks2,在X方向相邻的2个曝光区域A7间的空白区域中,设在Y方向的中央。In FIG. 3 , marks Ks1 are provided at regular intervals in the X direction in the peripheral area on the −Y side of the exposure area A7 , and marks Ks3 are provided at regular intervals in the X direction in the peripheral area on the +Y side of the exposure area A7 . Further, the mark Ks2 is provided at the center of the Y direction in the blank area between the two adjacent exposure areas A7 in the X direction.
标记Ks1,是以在对准显微镜AM1的对物透镜系GA1的观察区域Vw1内、及对准显微镜AM2的对物透镜系GA的观察区域Vw4内,于基板P的搬送期间能被依序捕捉的方式形成。另外,标记Ks3,是以在对准显微镜AM1的对物透镜系GA3的观察区域Vw3内、及对准显微镜AM2的对物透镜系GA的观察区域Vw6内,于基板P的搬送期间能被依序捕捉的方式形成。进一步的,标记Ks2,是以分别在对准显微镜AM1的对物透镜系GA2的观察区域Vw2内、及对准显微镜AM2的对物透镜系GA的观察区域Vw5内,于基板P的搬送期间被依序捕捉的方式形成。The mark Ks1 can be sequentially captured during the conveyance of the substrate P in the observation area Vw1 of the objective lens system GA1 of the alignment microscope AM1 and the observation area Vw4 of the objective lens system GA of the alignment microscope AM2 way of forming. In addition, the mark Ks3 is used in the observation area Vw3 of the objective lens system GA3 of the alignment microscope AM1 and the observation area Vw6 of the objective lens system GA of the alignment microscope AM2 so that it can be adhered to during the conveyance of the substrate P formed by sequential capture. Further, the mark Ks2 is used in the observation area Vw2 of the objective lens system GA2 of the alignment microscope AM1 and the observation area Vw5 of the objective lens system GA of the alignment microscope AM2 during the conveyance of the substrate P, respectively. Formed in a sequential manner.
因此,3个对准显微镜AM1、AM2中的旋转卷筒DR的Y方向两侧的对准显微镜AM1、AM2,可随时观察或检测形成在基板P的宽度方向两侧的标记Ks1、Ks3。另外,3个对准显微镜AM1、AM2中的旋转卷筒DR的Y方向中央的对准显微镜AM1、AM2,可随时观察或检测形成在描绘于基板P上的曝光区域A7彼此间的空白部等的标记Ks2。Therefore, the alignment microscopes AM1 and AM2 of the three alignment microscopes AM1 and AM2 on both sides in the Y direction of the rotating drum DR can observe or detect the marks Ks1 and Ks3 formed on both sides of the substrate P in the width direction at any time. In addition, among the three alignment microscopes AM1 and AM2, the alignment microscopes AM1 and AM2 in the center of the Y-direction of the rotating roll DR can observe or detect the blanks etc. formed between the exposure areas A7 drawn on the substrate P at any time. The marker Ks2.
此处,曝光装置EX由于适用了所谓的多光束型描绘装置11,因此为了将以多个描绘模组UW1~UW5的各描绘线LL1~LL5于基板P上描绘的多个图案彼此于Y方向适当的加以接合,用以将多个描绘模组UW1~UW5的接合精度抑制在容许范围内的校准是必须的。此外,对准显微镜AM1、AM2对多个描绘模组UW1~UW5的各描绘线LL1~LL5的观察区域Vw1~Vw6的相对配置关系(或相对于设计上的配置间隔的误差量)被称为基准线,相对配置关系或误差量,须以基准线管理加以精密的求出。为进行此基准线管理,也须校准。Here, since the so-called multi-beam
于用以确认多个描绘模组UW1~UW5的接合精度的校准、用以进行对准显微镜AM1、AM2的基准线管理的校准中,须于支承基板P的旋转卷筒DR外周面的至少一部设置基准标记或基准图案。因此,如图9所示,于曝光装置EX,是使用在外周面设有基准标记或基准图案的旋转卷筒DR。In the calibration for confirming the joining accuracy of the plurality of drawing modules UW1 to UW5 and the calibration for the reference line management of the alignment microscopes AM1 and AM2, at least one of the outer peripheral surfaces of the rotating roll DR supporting the substrate P is required. The fiducial mark or fiducial pattern is set in the part. Therefore, as shown in FIG. 9, in the exposure apparatus EX, the rotating drum DR which provided the reference mark or the reference pattern on the outer peripheral surface is used.
旋转卷筒DR于其外周面的两端侧,形成有构成后述旋转位置检测机构14的一部分的标尺部GPa、GPb。另外,旋转卷筒DR,于标尺部GPa、GPb的内侧,于全周刻设有由凹状槽、或凸状边缘构成的宽度窄的限制带CLa、CLb。基板P的Y方向宽度被设定为较该2条限制带CLa、CLb的Y方向间隔小,基板P在旋转卷筒DR的外周面中紧贴以限制带CLa、CLb所夹的内侧区域而被支承。On both end sides of the outer peripheral surface of the rotary reel DR, scale portions GPa and GPb constituting a part of the rotational
旋转卷筒DR,在以限制带CLa、CLb所夹的外周面,设有将相对旋转中心线AX2以+45度倾斜的多个线图案RL1、与相对旋转中心线AX2以-45度倾斜的多个线图案RL2以一定节距(周期)Pf1、Pf2重复刻设的网格状的基准图案(也可利用为基准标记)RMP。The rotating reel DR is provided with a plurality of line patterns RL1 inclined at +45 degrees with respect to the rotation center line AX2, and a plurality of line patterns RL1 inclined at -45 degrees with respect to the rotation center line AX2 on the outer peripheral surface sandwiched by the restriction belts CLa and CLb. The plurality of line patterns RL2 are a grid-shaped reference pattern (which can also be used as a reference mark) RMP in which the plurality of line patterns RL2 are repeatedly engraved at constant pitches (periods) Pf1 and Pf2.
基准图案RMP,为避免在基板P与旋转卷筒DR外周面的接触部分产生摩擦力或基板P的张力等的变化,是全面均一的斜图案(斜格子状图案)。另外,线图案RL1、RL2并不一定必须是倾斜45度,也可以是将线图案RL1作成与Y轴平行、线图案RL2作成与X轴平行的纵横的网格状图案。再者,不一定须使线图案RL1、RL2以90度交叉,也可使相邻的2条线图案RL1与相邻的2条线图案RL2所围成的矩形区域,以成为正方形(或长方形)以外的菱形的角度使线图案RL1、RL2交叉。The reference pattern RMP is an oblique pattern (oblique lattice pattern) that is uniform across the entire surface in order to avoid variations in friction force or tension of the substrate P at the contact portion between the substrate P and the outer peripheral surface of the rotary drum DR. Note that the line patterns RL1 and RL2 do not necessarily have to be inclined at 45 degrees, and the line pattern RL1 may be a vertical and horizontal grid pattern parallel to the Y axis and the line pattern RL2 parallel to the X axis. Furthermore, it is not necessary to make the line patterns RL1 and RL2 intersect at 90 degrees, and the rectangular area enclosed by the adjacent two line patterns RL1 and the adjacent two line patterns RL2 may be formed into a square (or a rectangle). ) at angles other than rhombus make the line patterns RL1 and RL2 intersect.
其次,参照图3、图4及图8说明旋转位置检测机构14。如图8所示,旋转位置检测机构14是以光学方式检测旋转卷筒DR的旋转位置之物,可适用例如使用旋转编码器等的编码器系统。旋转位置检测机构14具有设在旋转卷筒DR两端部的标尺部(指标)GPa、GPb、以及与标尺部GPa、GPb的各个对向的多个编码器读头(读取头)EN1、EN2、EN3、EN4。图4及图8中,虽仅显示与标尺部GPa对向的4个编码器读头EN1、EN2、EN3、EN4,但在标尺部GPb也同样的有对向配置的编码器读头EN1、EN2、EN3、EN4(参照图10)。Next, the rotational
标尺部GPa、GPb于旋转卷筒DR的外周面周方向全体分别形成为环状。标尺部GPa、GPb的刻度是于旋转卷筒DR的外周面周方向以一定节距(例如20μm)刻设凹状或凸状的格子线的绕射格子,构成为递增(incremental)型标尺。因此,标尺部GPa、GPb绕旋转中心线AX2而与旋转卷筒DR一体旋转。The scale portions GPa and GPb are formed in a ring shape as a whole in the circumferential direction of the outer peripheral surface of the rotary drum DR. The scales of the scale parts GPa and GPb are diffraction gratings in which concave or convex grating lines are engraved at a constant pitch (eg, 20 μm) in the circumferential direction of the outer peripheral surface of the rotary drum DR, and constitute an incremental scale. Therefore, the scale parts GPa and GPb rotate integrally with the rotary reel DR around the rotation center line AX2.
基板P,是在避开旋转卷筒DR两端的标尺部GPa、GPb的内侧、也即卷绕在限制带CLa、CLb的内侧。若须有严格的配置关系时,设定标尺部GPa、GPb的外周面、与卷绕在旋转卷筒DR的基板P的部分的外周面成同一面(距中心线AX2同一半径)。为达成此,将标尺部GPa、GPb的外周面,相对旋转卷筒DR的基板卷绕用外周面,作成于径方向高基板P的厚度量即可。因此,可将形成于旋转卷筒DR的标尺部GPa、GPb的外周面,设定为与基板P的外周面大致同一半径。从而,编码器读头EN1、EN2、EN3、EN4,可在与卷绕于旋转卷筒DR的基板P上的描绘面相同径方向位置检测标尺部GPa、GPb,缩小测量位置与处理位置因旋转的径方向相异而产生的阿贝误差。The substrate P is wound on the inner side of the scale portions GPa and GPb avoiding both ends of the rotating reel DR, that is, on the inner side of the restriction tapes CLa and CLb. If a strict arrangement relationship is required, the outer peripheral surfaces of the scale parts GPa and GPb are set to be flush with the outer peripheral surface of the portion of the substrate P wound around the rotary drum DR (same radius from the center line AX2 ). In order to achieve this, the outer peripheral surfaces of the scale parts GPa and GPb may be made as high as the thickness of the substrate P in the radial direction with respect to the outer peripheral surface for substrate winding of the rotating reel DR. Therefore, the outer peripheral surfaces of the scale portions GPa and GPb formed on the rotary reel DR can be set to be approximately the same radius as the outer peripheral surface of the substrate P. As shown in FIG. Therefore, the encoder heads EN1, EN2, EN3, and EN4 can detect the scale parts GPa and GPb at the same radial position as the drawing surface on the substrate P wound on the rotary reel DR, and reduce the measurement position and the processing position due to the rotation. Abbe error caused by different radial directions.
编码器读头EN1、EN2、EN3、EN4,从旋转中心线AX2观察是分别配置在标尺部GPa、GPb的周围,于旋转卷筒DR的周方向的不同位置。此编码器读头EN1、EN2、EN3、EN4连接于控制装置16。编码器读头EN1、EN2、EN3、EN4朝标尺部GPa、GPb投射测量用光束,对其反射光束(绕射光)进行光电检测,据以将对应标尺部GPa、GPb的周方向位置变化的检测讯号(例如具有90度相位差的2相讯号)输出至控制装置16。控制装置16,借由对来自编码器读头EN1~EN4的各个的检测讯号(2相讯号)以未图示的计数电路加以内插进行数位处理,即能以次微米的分解能力测量旋转卷筒DR的角度变化、也即测量在编码器读头EN1~EN4的各个的设置位置的旋转卷筒DR外周面的周方向位置变化。此时,控制装置16,也可从旋转卷筒DR的角度变化测量基板P在旋转卷筒DR的搬送速度或周方向的移动量。The encoder heads EN1 , EN2 , EN3 , and EN4 are disposed around the scale parts GPa and GPb, respectively, at different positions in the circumferential direction of the rotary drum DR as viewed from the rotation center line AX2 . The encoder read heads EN1 , EN2 , EN3 and EN4 are connected to the
另外,如图4及图8所示,编码器读头EN1配置在设置方位线Le1上。设置方位线Le1,是于XZ面内,连结编码器读头EN1的测量用光束对标尺部GPa(GPb)上的投射区域(读取位置)与旋转中心线AX2的线。另外,如上所述,设置方位线Le1,是于XZ面内,连结描绘线LL1、LL3、LL5与旋转中心线AX2的线。由以上可知,连结编码器读头EN1的读取位置与旋转中心线AX2的线、与连结描绘线LL1、LL3、LL5与旋转中心线AX2的线是相同方位线。In addition, as shown in FIGS. 4 and 8 , the encoder head EN1 is arranged on the setting azimuth line Le1. The setting azimuth line Le1 is a line connecting the projection area (reading position) on the scale part GPa (GPb) of the measuring beam of the encoder head EN1 and the rotation center line AX2 in the XZ plane. Moreover, as mentioned above, the orientation line Le1 is provided, and it is a line which connects the drawing lines LL1, LL3, LL5 and the rotation center line AX2 in the XZ plane. As can be seen from the above, the line connecting the reading position of the encoder head EN1 and the rotation center line AX2 and the line connecting the drawing lines LL1, LL3, LL5 and the rotation center line AX2 are the same azimuth lines.
同样的,如图4及图8所示,编码器读头EN2配置在设置方位线Le2上。设置方位线Le2,是于XZ面内,连结编码器读头EN2的测量用光束对标尺部GPa(GPb)上的投射区域与旋转中心线AX2的线。另外,如上所述,设置方位线Le2,是于XZ面内,连结描绘线LL2、LL4与旋转中心线AX2的线。由以上可知,连结编码器读头EN2的读取位置与旋转中心线AX2的线、与连结描绘线LL2、LL4与旋转中心线AX2的线是相同方位线。Similarly, as shown in FIGS. 4 and 8 , the encoder head EN2 is arranged on the setting azimuth line Le2. The azimuth line Le2 is provided and is a line connecting the projection area on the scale part GPa (GPb) and the rotation center line AX2 of the light beam for measurement of the encoder head EN2 in the XZ plane. In addition, as described above, the azimuth line Le2 is provided as a line connecting the drawing lines LL2 and LL4 and the rotation center line AX2 in the XZ plane. As can be seen from the above, the line connecting the reading position of the encoder head EN2 and the rotation center line AX2 and the line connecting the drawing lines LL2 and LL4 and the rotation center line AX2 are the same azimuth lines.
另外,如图4及图8所示,编码器读头EN3配置在设置方位线Le3上。设置方位线Le3,是于XZ面内,连结编码器读头EN3的测量用光束对标尺部GPa(GPb)上的投射区域与旋转中心线AX2的线。另外,如上所述,设置方位线Le3,是于XZ面内,连结对准显微镜AM1对基板P的观察区域Vw1~Vw3与旋转中心线AX2的线。由以上可知,连结编码器读头EN3的读取位置与旋转中心线AX2的线、与连结对准显微镜AM1的观察区域Vw1~Vw3与旋转中心线AX2的线,是相同方位线。Moreover, as shown in FIG.4 and FIG.8, the encoder head EN3 is arrange|positioned on the setting azimuth line Le3. The azimuth line Le3 is provided and is a line connecting the projection area on the scale part GPa (GPb) and the rotation center line AX2 of the light beam for measurement of the encoder head EN3 in the XZ plane. In addition, as described above, the azimuth line Le3 is provided as a line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 with respect to the substrate P and the rotation center line AX2 in the XZ plane. As can be seen from the above, the line connecting the reading position of the encoder head EN3 and the rotation center line AX2 and the line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2 are the same azimuth line.
同样的,如图4及图8所示,编码器读头EN4配置在设置方位线Le4上。设置方位线Le4,是于XZ面内,连结编码器读头EN4的测量用光束对标尺部GPa(GPb)上的投射区域与旋转中心线AX2的线。另外,如上所述,设置方位线Le4,是于XZ面内,连结对准显微镜AM2对基板P的观察区域Vw4~Vw6与旋转中心线AX2的线。由以上可知,连结编码器读头EN4的读取位置与旋转中心线AX2的线、与连结对准显微镜AM2的观察区域Vw4~Vw6与旋转中心线AX2的线,是相同方位线。Similarly, as shown in FIGS. 4 and 8 , the encoder head EN4 is arranged on the setting azimuth line Le4. The azimuth line Le4 is provided and is a line connecting the projection area on the scale part GPa (GPb) and the rotation center line AX2 of the light beam for measurement of the encoder head EN4 in the XZ plane. In addition, as described above, the orientation line Le4 is provided as a line connecting the observation areas Vw4 to Vw6 of the substrate P with the alignment microscope AM2 and the rotation center line AX2 in the XZ plane. As can be seen from the above, the line connecting the reading position of the encoder head EN4 and the rotation center line AX2 and the line connecting the observation areas Vw4 to Vw6 of the alignment microscope AM2 and the rotation center line AX2 are the same azimuth line.
将编码器读头EN1、EN2、EN3、EN4的设置方位(以旋转中心线AX2为中心的在XZ面内的角度方向)以设置方位线Le1、Le2、Le3、Le4表示的情形时,如图4所示,将多个描绘模组UW1~UW5及编码器读头EN1、EN2配置成设置方位线Le1、Le2相对中心面p3成角度±θ°。When the setting orientation of the encoder heads EN1, EN2, EN3, and EN4 (the angular direction in the XZ plane with the rotation center line AX2 as the center) is represented by the setting orientation lines Le1, Le2, Le3, and Le4, as shown in the figure As shown in FIG. 4 , the plurality of drawing modules UW1 to UW5 and the encoder heads EN1 and EN2 are arranged so that the azimuth lines Le1 and Le2 form an angle ±θ° with respect to the center plane p3.
此处,控制装置16,是以编码器读头EN1、EN2检测标尺部(旋转卷筒DR)GPa、GPb的旋转角度位置,并根据检测出的旋转角度位置一边特定基板P的移动位置、一边进行奇数号及偶数号描绘模组UW1~UW5的描绘控制。也就是说,控制装置16,在投射于基板P的描绘光束LB往扫描方向扫描的期间中,根据待描绘于基板P的图案的CAD信息进行光偏向器81的ON/OFF调变,但也可将使用光偏向器81的ON/OFF调变的时序,根据所检测的旋转角度位置(基板P的移动位置)来进行,借此能于基板P的光感应层上以良好精度描绘图案。Here, the
另外,控制装置16,可借由储存以对准显微镜AM1、AM2检测基板P上的对准标记Ks1~Ks3时、以编码器读头EN3、EN4检测的标尺部GPa、GPb(旋转卷筒DR)的旋转角度位置,而能求出基板P上的对准标记Ks1~Ks3的位置与旋转卷筒DR的旋转角度位置的对应关系。同样的,控制装置16,借由储存以对准显微镜AM1、AM2检测旋转卷筒DR上的基准图案RMP时以编码器读头EN3、EN4检测的标尺部GPa、GPb(旋转卷筒DR)的旋转角度位置,而能求出旋转卷筒DR上的基准图案RMP的位置与旋转卷筒DR的旋转角度位置的对应关系。如以上所述,对准显微镜AM1、AM2,可精密的测量于观察区域Vw1~Vw6内,对标记进行取样(sampling)的瞬间的旋转卷筒DR的旋转角度位置(或周方向位置)。曝光装置EX,即根据此测量结果,进行基板P与描绘于基板P上的既定图案的对位(对准)、或旋转卷筒DR与描绘装置11的校准。In addition, the
此外,多光束型的曝光装置EX,是一边以旋转卷筒DR将基板P搬送于搬送方向(长度方向)、一边沿着基板P上的多条描绘线LL1~LL5扫描描绘光束LB的点光。此处,基板P虽是卷绕于旋转卷筒DR的外周面一部分而被搬送,但有时会因旋转卷筒DR的旋转产生的振动等影响,使旋转卷筒DR与第2光学平台25的配置关系相对地位移。作为旋转卷筒DR与第2光学平台25的配置关系的位移,例如有于XY面内旋转卷筒DR与旋转中心线AX2相对Y方向倾斜的情形。此情形下,会因旋转卷筒DR的位置位移,而使卷绕于旋转卷筒DR的基板P与设置于第2光学平台25上的描绘装置11的相对配置关系,从适于曝光的既定相对配置关系(初始设定状态)位移。因此,第1实施形态的曝光装置EX,是为了测量旋转卷筒DR与描绘装置11的相对配置关系而将编码器读头EN1~EN4的安装设成如图10所示的构成。In addition, the multi-beam type exposure apparatus EX is a spot light that scans the drawing light beam LB along a plurality of drawing lines LL1 to LL5 on the substrate P while conveying the substrate P in the conveyance direction (longitudinal direction) by the rotating reel DR . Here, although the substrate P is wound around a part of the outer peripheral surface of the rotary drum DR and is transported, the relationship between the rotary drum DR and the second optical table 25 may be affected by vibration or the like caused by the rotation of the rotary drum DR in some cases. The configuration relationship is relatively displaced. As a displacement of the arrangement relationship between the rotating reel DR and the second optical table 25 , for example, there is a case where the rotating reel DR and the rotation center line AX2 in the XY plane are inclined with respect to the Y direction. In this case, the relative arrangement relationship between the substrate P wound on the rotating roll DR and the
图10是显示图1的曝光装置的编码器读头的配置的俯视图。如图10所示,编码器读头(第1检测装置)EN1、EN2,通过安装构件100安装于第2光学平台25。另一方面,编码器读头(第2检测装置)EN3、EN4通过安装构件101安装于本体框架21,另外,对准显微镜AM1、AM2也安装于本体框架21。编码器读头EN1、EN2,对应于设在旋转卷筒DR的旋转中心线AX2两侧的一对标尺部GPa、GPb而设有一对。因此,一对编码器读头EN1、EN2,检测标尺部GPa、GPb各自的旋转位置。FIG. 10 is a plan view showing the configuration of an encoder head of the exposure apparatus of FIG. 1 . As shown in FIG. 10 , the encoder heads (first detection devices) EN1 and EN2 are attached to the second optical table 25 via the
另外,于第1光学平台23与第2光学平台25之间设有测量旋转机构24的旋转量的旋转量测量装置105。旋转量测量装置105,例如使用线性编码器,以直动的方向沿着旋转轴I的周方向的方式配置于与旋转轴I相距较远侧。控制装置16,根据以旋转量测量装置105检测的在旋转轴I周方向的微少移动量,检测第2光学平台25相对于第1光学平台23的旋转量。另外,旋转机构24包含驱动部106,借由驱动部106被控制装置16驱动控制以使第2光学平台25旋转。此时,控制装置16,以使用旋转量测量装置105检测出的旋转量成为既定旋转量的方式,进行驱动部106的驱动控制以使第2光学平台25旋转。Further, between the first optical table 23 and the second optical table 25, a rotation
图11,是说明于图10的构成中旋转卷筒DR与描绘装置11(特别是第2光学平台25)在XY面内相对地微幅旋转的情形的俯视图。如图11所示,旋转卷筒DR的旋转中心线AX2延伸于Y方向,旋转中心线AX2在成为与静止坐标系XYZ的Y轴正确地平行的状态时,旋转中心线AX2位于基准位置。此处,在XY面内,旋转中心线AX2会因地面振动或来自装置内驱动源的振动等的影响,而从基准位置倾斜既定角度θz量。此外,图11中,将往左旋转的位移设为+θz,将往右旋转的位移设为-θz。在XY面内,若旋转中心线AX2从基准位置倾斜既定角度量,则旋转卷筒DR在轴方向的一端部会往既定方向(例如图11的-X方向)移动,另一方面,旋转卷筒DR在轴方向的另一端部会往与旋转卷筒DR的一端部相反的方向(例如图11的+X方向)移动。FIG. 11 is a plan view illustrating a state in which the rotary reel DR and the drawing device 11 (especially the second optical table 25 ) rotate relatively slightly in the XY plane in the configuration of FIG. 10 . As shown in FIG. 11 , the rotation center line AX2 of the rotary reel DR extends in the Y direction, and the rotation center line AX2 is located at the reference position when the rotation center line AX2 is exactly parallel to the Y axis of the stationary coordinate system XYZ. Here, in the XY plane, the rotation center line AX2 is inclined by a predetermined angle θ z from the reference position due to the influence of ground vibration, vibration from a drive source in the apparatus, or the like. In addition, in FIG. 11 , the displacement of the left rotation is +θ z , and the displacement of the right rotation is −θ z . In the XY plane, when the rotation center line AX2 is inclined by a predetermined angle from the reference position, one end portion in the axial direction of the rotary reel DR moves in a predetermined direction (for example, the -X direction in FIG. 11 ). The other end of the DR in the axial direction moves in the direction opposite to the one end of the rotating reel DR (for example, the +X direction in FIG. 11 ).
因此,一对编码器读头EN1、EN2,借由旋转中心线AX2从基准位置倾斜既定角度θz量,而会于以标尺部GPa侧的编码器读头EN1、EN2检测出的旋转位置(标尺部GPa的移动位置)与以标尺部GPb侧的编码器读头EN1、EN2检测出的旋转位置(标尺部GPb的移动位置)产生与角度θz相应的差。是以,控制装置16,能根据以一对编码器读头EN1、EN2检测出的旋转位置,检测出在XY面内的旋转卷筒DR的旋转中心线AX2的倾斜角度θz。具体而言,在将以与标尺部GPa侧的编码器读头EN1对应的计数电路计数的计数值(标尺GPa的移动位置)设为CD1a,将以与标尺部GPb侧的编码器读头EN1对应的计数电路计数的计数值(标尺GPb的移动位置)设为CD1b时,是将计数值CD1a与计数值CD1b的差分值每于旋转卷筒DR(标尺部GPa、GPb)旋转一定角度或每于一定时间逐次求出,并监控该差分值的变化,借此能测量旋转卷筒DR的旋转中心线AX2在XY面内的倾斜变动(角度θz)。关于一对编码器读头EN2也同样地,只要将以与标尺部GPa侧的编码器读头EN2对应的计数电路计数的计数值(标尺GPa的移动位置)设为CD2a,将以与标尺部GPb侧的编码器读头EN2对应的计数电路计数的计数值(标尺GPb的移动位置)设为CD2b,并监控该差分值的变化。Therefore, the pair of encoder heads EN1 and EN2 are inclined by a predetermined angle θ z from the reference position by the rotation center line AX2, and the rotation positions ( The movement position of the scale part GPa) and the rotational position (movement position of the scale part GPb) detected by the encoder heads EN1 and EN2 on the scale part GPb side generate a difference according to the angle θz. Therefore, the
此外,在倾斜变动(角度θz)的测量时,由于一对编码器读头EN1与一对编码器读头EN2是如先前的图4般在X方向设置于隔着中心面p3而对称的位置,因此也可监控与标尺部GPa对向的编码器读头EN1的计数值CD1a及与标尺部GPb对向的编码器读头EN2的计数值CD2b的差分值的变化、或与标尺部GPa对向的编码器读头EN2的计数值CD2a及与标尺部GPb对向的编码器读头EN1的计数值CD1b的差分值的变化。In addition, in the measurement of the inclination variation (angle θ z ), the pair of encoder heads EN1 and the pair of encoder heads EN2 are arranged symmetrically across the center plane p3 in the X direction as in the previous FIG. 4 . Therefore, it is also possible to monitor the change in the difference value between the count value CD1a of the encoder head EN1 facing the scale part GPa and the count value CD2b of the encoder head EN2 facing the scale part GPb, or the difference value between the count value CD2b of the encoder head EN2 facing the scale part GPa Changes in the difference value between the count value CD2a of the encoder head EN2 facing toward and the count value CD1b of the encoder head EN1 facing the scale portion GPb.
此处,控制装置16,为了适当地对以旋转卷筒DR搬送的基板P进行描绘装置11的描绘,而根据对准显微镜AM1、AM2的检测结果,修正相对于基板P的描绘装置11的位置。也就是说,控制装置16,是根据以对准显微镜AM1、AM2检测出的标记Ks1~Ks3的位置,检测基板P的形状或已形成于基板P上的元件图案(基底图案)区域的变形等的状态,求出与检测出的变形状态(特别是倾斜等)对应的相对的修正旋转量θ2。此外,修正旋转量θ2是从延伸于X方向的基准线起的角度。此外,图11中,将往左旋转的位移设为+θ2,往右旋转的位移设为-θ2。接着,控制装置16,根据所求出的修正旋转量θ2控制旋转机构24的驱动部106,借此修正相对于旋转卷筒DR的第2光学平台25的配置关系。Here, the
此时,控制装置16,在根据所求出的相对修正旋转量θ2使旋转机构24(第2光学平台25)从初始位置旋转修正后,由于编码器读头EN1、EN2也会旋转,因此无法考虑于旋转修正后所测量的旋转中心线AX2的倾斜θz、也即会变得没有意义。因此,控制装置16,是考虑事前(或前一刻)测量的旋转中心线AX2的倾斜θz,根据修正旋转量θ2使旋转机构24旋转。At this time, after the
具体而言,控制装置16,是以根据对准显微镜AM1、AM2的检测结果所测量的相对修正旋转量θ2成为零的方式、也就是“θ2-θz(=0°)”成为零的方式,一边以旋转量测量装置105测量旋转机构24所致的旋转量,一边使旋转机构24旋转。Specifically, the
如此,控制装置16,是根据一对编码器读头EN1、EN2的各检测结果,从旋转卷筒DR与第2光学平台25的既定相对配置关系,求出偏移信息也即在XY面内的旋转中心线AX2的倾斜(在XY面内的旋转卷筒DR的倾斜)θz,以与以对准显微镜AM1、AM2求出的基板P在XY面内的倾斜对应的修正旋转量θ2与旋转中心线AX2的倾斜θz的偏差减少的方式、也就是维持既定相对配置关系的方式,控制旋转机构24的驱动部106。In this way, the
其次,参照图12说明曝光装置EX的调整方法。图12是第1实施形态的曝光装置的调整方法相关的流程图。控制装置16,在为了以描绘装置11适当地对基板P进行描绘,而以旋转机构24修正旋转卷筒DR与第2光学平台25的配置关系时,首先取得以对准显微镜AM1、AM2检测的检测结果(基板P上的元件图案区域的倾斜等)(步骤S1)。控制装置16,根据以对准显微镜AM1、AM2检测的检测结果,求出待以旋转机构24调整的修正旋转量θ2(步骤S2)。此后,控制装置16,是从一对编码器读头EN1、EN2的检测结果的比较取得与倾斜θz相关的信息(步骤S3)。控制装置16,根据以一对编码器读头EN1、EN2检测出的标尺部GPa、GPb各自的旋转角度位置(计数值CD1a,CD1b,CD2a,CD2b),求出旋转中心线AX2的倾斜θz(步骤S4)。接着,控制装置16,以求出的修正旋转量θ2及旋转中心线AX2的倾斜θz的偏差、也就是“θ2-θz”成为零的方式,对旋转机构24进行反馈控制等来使的旋转(步骤S5)。此外,在此步骤S5的后,控制装置16,是再度根据以一对编码器读头EN1、EN2检测出的标尺部GPa、GPb各自的旋转角度位置(计数值CD1a、CD1b、CD2a、CD2b),以适当的时间间隔求出旋转中心线AX2的新的倾斜θ’z。接着,当因装置的振动等使新的倾斜θ’z变化时,以维持该新的倾斜θ’z的方式对旋转机构24进行反馈控制。Next, an adjustment method of the exposure apparatus EX will be described with reference to FIG. 12 . 12 is a flowchart related to the adjustment method of the exposure apparatus according to the first embodiment. When correcting the arrangement relationship between the rotary reel DR and the second optical table 25 by the
以上的第1实施形态,由于是将编码器读头EN1、EN2安装于第2光学平台25,因此曝光装置EX能根据编码器读头EN1、EN2的检测结果,求出在XY面内的旋转卷筒DR与第2光学平台25从既定相对配置关系起的偏移信息(旋转中心线AX2的倾斜θz)。接着,曝光装置EX,能根据所求出的偏移信息,修正旋转卷筒DR与第2光学平台25的相对配置关系。是以,曝光装置EX,即使因旋转卷筒DR的旋转所致的振动等的影响使旋转卷筒DR的位置位移,由于也能维持旋转卷筒DR与第2光学平台25的既定相对配置关系,因此能对基板P以良好精度进行描绘装置11的描绘。In the first embodiment described above, since the encoder heads EN1 and EN2 are attached to the second optical table 25, the exposure apparatus EX can obtain the rotation in the XY plane based on the detection results of the encoder heads EN1 and EN2. Offset information (inclination θ z of the rotation center line AX2 ) from the predetermined relative arrangement relationship between the reel DR and the second optical table 25 . Next, the exposure apparatus EX can correct the relative arrangement relationship between the rotating drum DR and the second optical table 25 based on the obtained offset information. Therefore, in the exposure apparatus EX, even if the position of the rotary drum DR is displaced due to the influence of vibration due to the rotation of the rotary drum DR, the predetermined relative arrangement relationship between the rotary drum DR and the second optical table 25 can be maintained. , the drawing by the
另外,第1实施形态,能将编码器读头EN1、EN2设于设置方位线Le1、Le2上。因此,能使连结编码器读头EN1与旋转中心线AX2的方向与连结奇数号的描绘线LL1、LL3、LL5与旋转中心线AX2的方向成为相同方向。同样地,能使连结编码器读头EN2与旋转中心线AX2的方向与连结偶数号的描绘线LL2、LL4与旋转中心线AX2的方向成为相同方向。因此,能使编码器读头EN1、EN2与描绘线LL1~LL5的配置关系一致。是以,由于即使旋转卷筒DR的位置位移,也能以编码器读头EN1、EN2以良好精度测量相对于旋转卷筒DR的描绘线LL1~LL5的配置关系,因此能进行不易受到干扰所致的影响的测量。In addition, in the first embodiment, the encoder heads EN1 and EN2 can be provided on the installation azimuth lines Le1 and Le2. Therefore, the direction connecting the encoder head EN1 and the rotation center line AX2 can be the same direction as the direction connecting the odd-numbered drawing lines LL1, LL3, LL5 and the rotation center line AX2. Similarly, the direction connecting the encoder head EN2 and the rotation center line AX2 can be the same direction as the direction connecting the even-numbered drawing lines LL2 and LL4 and the rotation center line AX2. Therefore, the arrangement relationship of the encoder heads EN1 and EN2 and the drawing lines LL1 to LL5 can be matched. Therefore, even if the position of the rotating reel DR is displaced, the encoder heads EN1 and EN2 can measure the arrangement relationship of the drawing lines LL1 to LL5 with respect to the rotating reel DR with high accuracy, so that it is possible to carry out a process that is less susceptible to disturbances. A measure of the resulting impact.
另外,第1实施形态,能将编码器读头EN3、EN4安装于本体框架21。因此,曝光装置EX,能根据编码器读头EN3、EN4的检测结果,以本体框架21(旋转卷筒DR的轴承部)作为静止基准来进行对准显微镜AM1、AM2对标记Ks1~Ks3的测量。接着,曝光装置EX,能根据对准显微镜AM1、AM2的检测结果,求出待以旋转机构24修正的相对修正旋转量θ2。因此,曝光装置EX,能根据所求出的修正旋转量θ2与作为偏移信息也即旋转中心线AX2的倾斜θz的偏差,精密地修正旋转卷筒DR与第2光学平台25的配置关系。In addition, in the first embodiment, the encoder heads EN3 and EN4 can be attached to the
另外,第1实施形态,能将编码器读头EN3、EN4设于设置方位线Le3、Le4上。因此,能使连结编码器读头EN3与旋转中心线AX2的方向与连结观察区域Vw1~Vw3与旋转中心线AX2的方向成为相同方向。另外,能使连结编码器读头EN4与旋转中心线AX2的方向与连结观察区域Vw4~Vw6与旋转中心线AX2的方向成为相同方向。因此,能使编码器读头EN3、EN4与观察区域Vw1~Vw6的配置关系一致。是以,由于即使旋转卷筒DR的位置位移,也能以编码器读头EN3、EN4以良好精度测量相对于旋转卷筒DR的观察区域Vw1~Vw6的配置关系,因此能进行不易受到干扰所致的影响的测量。In addition, in the first embodiment, the encoder heads EN3 and EN4 can be provided on the installation azimuth lines Le3 and Le4. Therefore, the direction connecting the encoder head EN3 and the rotation center line AX2 and the direction connecting the observation areas Vw1 to Vw3 and the rotation center line AX2 can be the same direction. In addition, the direction connecting the encoder head EN4 and the rotation center line AX2 and the direction connecting the observation areas Vw4 to Vw6 and the rotation center line AX2 can be the same direction. Therefore, the arrangement relationship of the encoder heads EN3 and EN4 and the observation areas Vw1 to Vw6 can be matched. Therefore, even if the position of the rotating reel DR is displaced, the encoder heads EN3 and EN4 can measure the disposition relationship of the observation areas Vw1 to Vw6 with respect to the rotating reel DR with good accuracy, so that it is possible to perform an operation that is less susceptible to disturbances. A measure of the resulting impact.
另外,第1实施形态,能借由以旋转机构24使第2光学平台25相对于第1光学平台23旋转,来修正旋转卷筒DR与第2光学平台25的配置关系。因此,曝光装置EX,能将以设置于第2光学平台25的描绘装置11形成的描绘线LL1~LL5,相对于卷绕于旋转卷筒DR的基板P修正至适当位置,因此能以良好精度进行描绘装置11对基板P的描绘。Moreover, in 1st Embodiment, by rotating the 2nd optical table 25 with respect to the 1st optical table 23 by the
此外,第1实施形态中,虽在实行用以求出修正旋转量θ2的步骤S1及步骤S2后,实行用以求出偏移信息的步骤S3及步骤S4,但不限定于此构成。也可并行进行用以求出修正旋转量θ2的步骤S1及步骤S2与用以求出偏移信息的步骤S3及步骤S4,也可在实行用以求出偏移信息的步骤S3及步骤S4后,实行用以求出修正旋转量θ2的步骤S1及步骤S2。In addition, in the first embodiment, the steps S3 and S4 for obtaining the offset information are executed after the steps S1 and S2 for obtaining the correction rotation amount θ2 are executed , but the configuration is not limited to this. Steps S1 and S2 for obtaining the correction rotation amount θ 2 and steps S3 and S4 for obtaining the offset information may be performed in parallel, and the steps S3 and S4 for obtaining the offset information may be executed simultaneously. After S4, steps S1 and S2 for obtaining the correction rotation amount θ2 are performed.
[第2实施形态][Second Embodiment]
其次,参照图13说明第2实施形态的曝光装置EX。图13是显示第2实施形态的曝光装置的主要部分的配置的立体图。此外,第2实施形态中,为了避免与第1实施形态重复的记载而仅说明与第1实施形态不同的部分,针对与第1实施形态相同的构成要素,赋予与第1实施形态相同的符号进行说明。第1实施形态的曝光装置EX中,作为旋转卷筒DR与第2光学平台25的配置关系的位移,说明了在XY面内旋转卷筒DR的旋转中心线AX2相对于X方向(基准位置)倾斜的情形。第2实施形态的曝光装置EX中,作为旋转卷筒DR与第2光学平台25的配置关系的位移,说明在YZ面内旋转卷筒DR的旋转中心线AX2相对于Y方向(基准位置)倾斜的情形。Next, the exposure apparatus EX of the second embodiment will be described with reference to FIG. 13 . 13 is a perspective view showing the arrangement of main parts of the exposure apparatus according to the second embodiment. In addition, in the second embodiment, in order to avoid overlapping description with the first embodiment, only the parts different from the first embodiment will be described, and the same components as those of the first embodiment will be given the same reference numerals as those of the first embodiment. Be explained. In the exposure apparatus EX of the first embodiment, as the displacement of the arrangement relationship between the rotary drum DR and the second optical table 25, the rotation center line AX2 of the rotary drum DR in the XY plane with respect to the X direction (reference position) has been described. inclined situation. In the exposure apparatus EX according to the second embodiment, as the displacement of the arrangement relationship between the rotary drum DR and the second optical table 25, the inclination of the rotation center line AX2 of the rotary drum DR with respect to the Y direction (reference position) in the YZ plane will be described. situation.
如图13所示,三点座22,是发挥连结本体框架21与第1光学平台23及第2光学平台25的连结机构的功能。此处,第1实施形态中,使通过三点座22连结的本体框架21与第1光学平台23发挥第1支承构件的功能,使第2光学平台25发挥第2支承构件的功能,使旋转机构24发挥连结机构的功能。第2实施形态中,则使本体框架21发挥第1支承构件的功能,使通过旋转机构24连结的第1光学平台23与第2光学平台25发挥第2支承构件的功能,使三点座22发挥连结机构的功能。As shown in FIG. 13 , the three-
三点座22,包含具有马达或压电元件等的驱动部110,借由驱动部110被控制装置16驱动控制,而独立调整在各支承点22a的Z方向长度(高度),借此调整相对于本体框架21的第1光学平台23的倾斜。此处,旋转中心线AX2延伸于Y方向,以延伸于Y方向的旋转中心线AX2的位置作为基准位置。在YZ面内,作为基准位置的旋转中心线AX2会因旋转所致的振动等影响而从基准位置倾斜既定角度量。在旋转中心线AX2从基准位置倾斜既定角度量后,旋转卷筒DR在轴方向的一端部会往既定方向(例如图13的-Z方向)移动,且旋转卷筒DR在轴方向的另一端部会往与旋转卷筒DR的一端部相反的方向(例如图13的+Z方向)相对移动。The three-
因此,一对编码器读头EN1、EN2,在安装于第2光学平台25(或第1光学平台23)侧的场合,借由旋转中心线AX2从基准位置在YZ面内倾斜既定角度量,而能于以标尺部GPa侧的编码器读头EN1、EN2检测出的旋转角度位置(计数值CD1a、CD2a)与以标尺部GPb侧的编码器读头EN1、EN2检测出的旋转角度位置(计数值CD1b、CD2b)产生差。是以,控制装置16,能根据以一对编码器读头EN1、EN2检测出的旋转角度位置,检测出在YZ面内旋转卷筒DR的旋转中心线AX2在YZ面内的倾斜变化。不过,以标尺部GPa侧的编码器EN1、EN2或标尺部GPb侧的编码器读头EN1、EN2检测出的旋转角度位置的信息,对旋转中心线AX2(旋转卷筒DR)的Z方向位移几乎不具有感度,是如第1实施形态般,对旋转中心线AX2(旋转卷筒DR)的X方向位移具有感度的构成。Therefore, when the pair of encoder heads EN1 and EN2 is mounted on the side of the second optical table 25 (or the first optical table 23 ), the rotation center line AX2 is inclined from the reference position by a predetermined angle in the YZ plane, The rotation angle positions (count values CD1a, CD2a) detected by the encoder heads EN1, EN2 on the scale part GPa side and the rotation angle positions (count values CD1a, CD2a) detected by the encoder heads EN1, EN2 on the scale part GPb side ( The count values CD1b, CD2b) produced a difference. Therefore, the
因此,在第2实施形态中,是使用图4、图8、图10、图11中所示的对准显微镜AM1、AM2的设置方位上所配置的一对编码器读头EN3、EN4方向,测量旋转中心线AX2(旋转卷筒DR)两端侧在Z方向的位移。因此,也可如图10、图11所示,将安装于本体框架21的编码器读头EN3、EN4安装于第1光学平台23或第2光学平台25,根据以与标尺部GPa对向的一对编码器读头EN3、EN4检测出的旋转角度位置(对应的计数电路的计数值CD3a、CD4a)及以与标尺部GPb对向的一对编码器读头EN3、EN4检测出的旋转角度位置(对应的计数电路的计数值CD3b、CD4b)的差分,检测在YZ面内的旋转卷筒DR的旋转中心线AX2相对于基准位置的旋转中心线AX2的倾斜。Therefore, in the second embodiment, a pair of encoder heads EN3 and EN4 directions arranged in the installation directions of the microscopes AM1 and AM2 shown in FIGS. 4 , 8 , 10 and 11 are used. The displacement in the Z direction on both ends of the rotation center line AX2 (rotating drum DR) is measured. Therefore, as shown in FIGS. 10 and 11 , the encoder heads EN3 and EN4 mounted on the
接着,控制装置16,根据一对编码器读头EN3、EN4的各检测结果(计数值CD3a、CD3b、CD4a、CD4b),从旋转卷筒DR与第2光学平台25的既定相对配置关系求出偏移信息也即在YZ面内的旋转中心线AX2的倾斜,以所求出的旋转中心线AX2的倾斜减少的方式、也就是维持既定相对配置关系的方式控制三点座22的驱动部110,修正第2光学平台25全体的倾斜。Next, the
以上,第2实施形态,能借由将编码器读头EN3、EN4(或编码器读头EN1、EN2)安装于第2光学平台25,根据编码器读头EN3、EN4(或编码器读头EN1、EN2)的检测结果(旋转角度位置的差分),求出在YZ面内的旋转卷筒DR与第2光学平台25从既定相对配置关系起的偏移信息(Z方向的位移及在YZ面内的倾斜)。接着,曝光装置EX,能根据所求出的偏移信息,修正旋转卷筒DR与第2光学平台25的相对配置关系。是以,曝光装置EX,由于即使因振动等的影响使旋转卷筒DR的位置位移,也能维持旋转卷筒DR与第2光学平台25的既定相对配置关系,因此能对基板P以良好精度进行曝光。As described above, in the second embodiment, by attaching the encoder heads EN3 and EN4 (or the encoder heads EN1 and EN2) to the second optical table 25, the encoder heads EN3 and EN4 (or the encoder heads EN2) can be EN1, EN2) detection results (difference in rotational angle position), and obtain the offset information (the displacement in the Z direction and the displacement in the YZ direction) from the predetermined relative arrangement relationship between the rotating drum DR and the second optical table 25 in the YZ plane. in-plane tilt). Next, the exposure apparatus EX can correct the relative arrangement relationship between the rotating drum DR and the second optical table 25 based on the obtained offset information. Therefore, the exposure apparatus EX can maintain the predetermined relative arrangement relationship between the rotary drum DR and the second optical table 25 even if the position of the rotary drum DR is displaced due to the influence of vibration or the like, so that the substrate P can be treated with high accuracy. Expose.
[第3实施形态][third embodiment]
其次,参照图14说明第3实施形态的曝光装置EX。图14是显示第3实施形态的曝光装置的主要部分的配置的立体图。此外,第3实施形态也同样地,为了避免与第1及第2实施形态重复的记载而仅说明与第1及第2实施形态不同的部分,针对与第1及第2实施形态相同的构成要素,赋予与第1及第2实施形态相同的符号进行说明。第1及第2实施形态的曝光装置EX,是借由旋转机构24及三点座22使描绘装置11侧(第2支承构件侧)的位置位移。第3实施形态的曝光装置EX,则借由X移动机构121及Z移动机构122使旋转卷筒DR(旋转中心轴AX2)的两端侧位置往X方向与Z方向位移。Next, the exposure apparatus EX of the third embodiment will be described with reference to FIG. 14 . FIG. 14 is a perspective view showing the arrangement of the main parts of the exposure apparatus according to the third embodiment. Also, in the third embodiment, in order to avoid overlapping descriptions with the first and second embodiments, only the parts different from the first and second embodiments will be described, and the same configuration as the first and second embodiments will be described. Elements are described with the same reference numerals as in the first and second embodiments. In the exposure apparatus EX of the first and second embodiments, the position of the
如图14所示,旋转卷筒DR,是于轴方向两侧设有轴(shaft)部Sf2,各轴部Sf2是通过轴承123而能旋转地轴支于本体框架21。于两侧的轴承123,分别相邻地设有X移动机构121及Z移动机构122,各X移动机构121及各Z移动机构122能使轴承123往X方向及Z方向移动(微动)。As shown in FIG. 14 , the rotating drum DR is provided with shaft portions Sf2 on both sides in the axial direction, and each shaft portion Sf2 is rotatably supported by the
此处,第3实施形态,是使轴承123发挥第1支承构件的功能,使装置框架13发挥第2支承构件的功能,使各X移动机构121及各Z移动机构122发挥连结机构的功能。Here, in the third embodiment, the bearing 123 functions as a first support member, the
两侧的一对X移动机构121,能使两侧的一对轴承123分别往X方向移动,以在XY面内微调旋转卷筒DR的旋转中心线AX2的倾斜与X方向位置。此处,旋转中心线AX2,是与第1实施形态同样地延伸于Y方向,以延伸于Y方向的旋转中心线AX2的位置作为基准位置。在XY面内,作为基准位置的旋转中心线AX2因振动等的影响而从基准位置倾斜既定角度量时,能借由调整两侧的一对X移动机构121的驱动量修正旋转卷筒DR在XY面内的倾斜。The pair of
另外,两侧的一对Z移动机构122,能使两侧的一对轴承123分别往Z方向移动,以在YZ面内微调旋转卷筒DR的旋转中心线AX2的倾斜与Z方向位置。此处,旋转中心线AX2,是与第2实施形态同样地延伸于Y方向,以延伸于Y方向的旋转中心线AX2的位置作为基准位置。在YZ面内,作为基准位置的旋转中心线AX2因振动等的影响而从基准位置倾斜既定角度量时,能借由调整两侧的一对Z移动机构122的驱动量修正旋转卷筒DR在YZ面内的倾斜。In addition, the pair of
一对编码器读头EN1、EN2,能如以第1实施形态说明般,测量第2光学平台25与旋转卷筒DR(旋转中心线AX2)在XY面内的相对倾斜误差。另外,第3实施形态也与第2实施形态同样地,在将编码器读头EN3、EN4安装于第2光学平台25(或第1光学平台23)的场合,一对编码器读头EN3、EN4能如以第2实施形态说明般测量第2光学平台25与旋转卷筒DR(旋转中心线AX2)在YZ面内的相对倾斜误差。The pair of encoder heads EN1 and EN2 can measure the relative inclination error of the second optical table 25 and the rotary reel DR (rotation center line AX2 ) in the XY plane as described in the first embodiment. Also, in the third embodiment, similarly to the second embodiment, when the encoder heads EN3, EN4 are mounted on the second optical table 25 (or the first optical table 23), a pair of encoder heads EN3, EN4 EN4 can measure the relative inclination error in the YZ plane of the 2nd optical table 25 and the rotating drum DR (rotation center line AX2) as demonstrated in 2nd Embodiment.
因此,控制装置16,是根据一对编码器读头EN1、EN2的各检测结果(计数值CD1a、CD1b、CD2a、CD2b),求出旋转卷筒DR与第2光学平台25从既定相对配置关系起的偏移信息(在XY面内的旋转中心线AX2的相对倾斜θZ)。进而,控制装置16,是根据对准显微镜AM1、AM2的检测结果测量基板P上的元件图案区域的倾斜等,求出X移动机构121的修正旋转量θ2。控制装置16,以所求出的修正旋转量θ2与旋转中心线AX2的倾斜θZ的偏差减少的方式、也就是维持既定相对配置关系的方式控制两侧的X移动机构121的驱动量。同样地,控制装置16,是根据一对编码器读头EN3、EN4的各检测结果(计数值CD3a、CD3b、CD4a、CD4b),从旋转卷筒DR与第2光学平台25的既定相对配置关系,求出偏移信息也即在YZ面内的旋转中心线AX2的倾斜(设为θX),并以所求出的旋转中心线AX2的倾斜θX减少的方式、也就是维持既定相对配置关系,控制两侧的Z移动机构122的驱动量。Therefore, the
以上的第3实施形态,能借由在XY面内以X移动机构121使旋转卷筒DR相对本体框架21绕与Z轴平行的轴旋转,且在YZ面内以Z移动机构122使旋转卷筒DR相对本体框架21绕与X轴平行的轴旋转,调整旋转卷筒DR与第2光学平台25的相对配置关系。因此,曝光装置EX,能将以设置于第2光学平台25的描绘装置11形成的描绘线LL1~LL5,相对于卷绕于旋转卷筒DR的基板P修正至适当位置,能对基板P以良好精度曝光元件图案。In the third embodiment described above, the rotating drum DR can be rotated with respect to the
[第4实施形态][4th Embodiment]
其次,参照图15说明第4实施形态的曝光装置EX。图15,是显示第4实施形态的曝光装置的旋转卷筒及描绘装置的构成的图。此外,第4实施形态也同样地,为了避免与第1~第3实施形态重复的记载而仅说明与第1~第3实施形态不同的部分,针对与第1~第3实施形态相同的构成要素,赋予与第1~第3实施形态相同的符号进行说明。第3实施形态的曝光装置EX,是借由使轴承123移动的X移动机构121及Z移动机构122来使旋转卷筒DR的位置位移。第4实施形态的曝光装置EX,则借由与装置框架13分开独立的卷筒支承框架130来使旋转卷筒DR的位置位移。Next, the exposure apparatus EX of the fourth embodiment will be described with reference to FIG. 15 . FIG. 15 is a diagram showing the configuration of the rotating reel and the drawing device of the exposure apparatus according to the fourth embodiment. In addition, the fourth embodiment is also similar, in order to avoid overlapping descriptions with the first to third embodiments, only the parts different from the first to third embodiments will be described, and the same configuration as the first to third embodiments will be described. Elements are described with the same reference numerals as in the first to third embodiments. In the exposure apparatus EX of the third embodiment, the position of the rotating drum DR is displaced by the
如图15所示,卷筒支承框架130,从Z方向下方侧依序具有卷筒旋转机构131与卷筒支承构件132。卷筒旋转机构131,是通过防振单元SU3而设置在设置面E上。卷筒支承构件132设置于卷筒旋转机构131上,将旋转卷筒DR的轴以双侧支承能旋转地轴支。卷筒旋转机构131,借由在XY面内以与Z轴平行的旋转轴Ia(与旋转中心轴AX2交叉)为中心使卷筒支承构件132旋转,调整旋转卷筒DR的旋转中心线AX2在XY面内的倾斜。As shown in FIG. 15 , the
另外,由于将旋转卷筒DR设于与装置框架13分开独立的卷筒支承框架130,因此本实施形态,能省略先前的第1~第3实施形态中的三点座22、第1光学平台23及旋转机构24,于本体框架21上仅设置第2光学平台25与被其支承的描绘装置11。此处,第4实施形态,是使卷筒支承框架130发挥第1支承构件的功能,使装置框架13发挥第2支承构件的功能,使卷筒旋转机构131发挥连结机构的功能。In addition, since the rotating reel DR is provided in the
此处,控制装置16,是根据安装于第2光学平台25的一对编码器读头EN1、EN2的各检测结果(计数值CD1a、CD1b、CD2a、CD2b),检测出相对于往Y方向延伸的基准位置的旋转中心线AX2的、旋转卷筒DR(旋转中心线AX2)与第2光学平台25在XY面内的相对倾斜θZ。进而控制装置16,是根据对准显微镜AM1、AM2的检测结果测量基板P上的元件图案区域的倾斜等,求出卷筒旋转机构131的修正旋转量θ2。控制装置16,是以所求出的修正旋转量θ2与旋转中心线AX2的倾斜θZ的偏差减少的方式、也就是维持既定相对配置关系的方式控制卷筒旋转机构131。此外,配置于与对准显微镜AM1、AM2设置方位相同方向的一对编码器读头EN3、EN4虽安装于第2光学平台25,但也可安装于卷筒支承构件132侧。Here, the
以上,第4实施形态,由于能借由以卷筒旋转机构131使卷筒支承框架130旋转而使旋转卷筒DR相对于第2光学平台25旋转,因此能修正旋转卷筒DR与第2光学平台25的相对配置关系。因此,曝光装置EX,能将卷绕于旋转卷筒DR的基板P,相对于以设置在第2光学平台25的描绘装置11形成的描绘线LL1~LL5调整至适当位置,能对基板P以良好精度曝光元件图案。As described above, in the fourth embodiment, since the
[第5实施形态][Fifth Embodiment]
其次,参照图16说明第5实施形态的曝光装置EX。图16是显示第5实施形态的曝光装置的编码器读头的配置的俯视图。此外,第5实施形态也同样地,为了避免与第1~第4实施形态重复的记载而仅说明与第1~第4实施形态不同的部分,针对与第1~第4实施形态相同的构成要素,赋予与第1~第4实施形态相同的符号进行说明。第1实施形态的曝光装置EX,是以一对编码器读头EN1、EN2检测旋转卷筒DR的倾斜。第5实施形态中,则借由一对编码器读头EN1、EN2与一对编码器读头EN5、EN6检测旋转卷筒DR的倾斜。Next, the exposure apparatus EX of the fifth embodiment will be described with reference to FIG. 16 . 16 is a plan view showing the arrangement of the encoder head of the exposure apparatus according to the fifth embodiment. Also, in the fifth embodiment, in order to avoid overlapping descriptions with the first to fourth embodiments, only the parts different from the first to fourth embodiments will be described, and the same configuration as the first to fourth embodiments will be described. Elements are described with the same reference numerals as in the first to fourth embodiments. The exposure apparatus EX of 1st Embodiment detects the inclination of the rotary drum DR with a pair of encoder heads EN1 and EN2. In the fifth embodiment, the inclination of the rotating drum DR is detected by the pair of encoder heads EN1 and EN2 and the pair of encoder heads EN5 and EN6.
如图16所示,一对编码器读头EN1、EN2通过安装构件100安装于第2光学平台25。另外,一对编码器读头EN5、EN6通过安装构件141安装于本体框架21。此处,各编码器读头EN1与各编码器读头EN5是在Y方向相隔一定间隙相邻设置。另外,以于Y方向相邻的两个编码器读头EN1及编码器读头EN5的各个均能检测各标尺部GPa、GPb的方式,将标尺部GPa、GPb的Y方向宽度设定得较宽。As shown in FIG. 16 , the pair of encoder heads EN1 and EN2 are attached to the second optical table 25 via the
此处,由于旋转卷筒DR安装于本体框架21,因此控制装置16,是根据以一对编码器读头EN5、EN6的各个检测出的旋转角度位置(对应的计数电路的计数值CD5a、CD5b、CD6a、CD6b),检测旋转卷筒DR的旋转中心线AX2在XY面内的倾斜θZR,并将所检测出的倾斜θZR作为基准位置。也即,借由在旋转中心轴AX2的一方侧与标尺部GPa对向的编码器读头EN5的计数值CD5a与在旋转中心轴AX2的另一方侧与标尺部GPb对向的编码器读头EN5的计数值CD5b的差分值的变化、或者、与标尺部GPa对向的编码器读头EN6的计数值CD6a与在旋转中心轴AX2的另一方侧与标尺部GPb对向的编码器读头EN6的计数值CD56的差分值的变化,能测量以本体框架21作为基准的旋转卷筒DR在XY面内的倾斜θZR的变动。Here, since the rotating reel DR is attached to the
另外,控制装置16,是与第1实施形态同样地,根据以一对编码器读头EN1、EN2检测出的旋转角度位置(计数值CD1a、CD1b、CD2a、CD2b),求出旋转卷筒DR与第2光学平台25在XY面内的相对倾斜θZ。因此,基于根据以一对编码器读头EN5、EN6的各个检测出的旋转角度位置所测量的倾斜θZR、与根据以一对编码器读头EN1、EN2检测出的旋转角度位置所测量的倾斜θZ,借由旋转机构24使第2光学平台25旋转,据以能将第2光学平台25与被其支承的描绘装置11相对本体框架21(静止基准)设定成无旋转误差。不过,与第1实施形态同样地,在对应形成于基板P上的元件图案区域的倾斜误差的场合,是加上与根据对准显微镜AM1、AM2的检测结果所测量的元件图案区域的相对倾斜θ2相应的修正量来驱动旋转机构24。In addition, the
以上,第5实施形态,能根据以一对编码器读头EN5、EN6检测出的旋转位置,检测出以本体框架21作为基准的旋转卷筒DR的旋转中心线AX2在XY面内的倾斜θZR。因此,控制装置16,能测量旋转卷筒DR的旋转中心线AX2的基准位置,借此,能以良好精度测量旋转卷筒DR与第2光学平台25的既定相对配置关系。特别是,于进行对基板P上描绘元件图案区域的第1层用的图案的第一次曝光时,即使旋转卷筒DR相对于作为静止基准的本体框架21在XY面内倾斜,也可修正第一次曝光的图案在基板P上倾斜而被转印一事。As described above, in the fifth embodiment, it is possible to detect the inclination θ in the XY plane of the rotation center line AX2 of the rotary reel DR with the
[第6实施形态][Sixth Embodiment]
其次,参照图17说明第6实施形态的曝光装置EX。图17是显示第6实施形态的曝光装置的标尺圆盘的配置的俯视图。此外,第6实施形态也同样地,为了避免与第1~第5实施形态重复的记载而仅说明与第1~第5实施形态不同的部分,针对与第1~第5实施形态相同的构成要素,赋予与第1~第5实施形态相同的符号进行说明。第1至第5实施形态的曝光装置EX,是使用形成于旋转卷筒DR外周面的标尺部GPa、GPb检测旋转卷筒DR的旋转位置。第6实施形态的曝光装置EX,则是使用安装于旋转卷筒DR的高真圆度的标尺圆盘SD检测旋转卷筒DR的旋转位置。Next, the exposure apparatus EX of the sixth embodiment will be described with reference to FIG. 17 . 17 is a plan view showing the arrangement of the scale disks of the exposure apparatus according to the sixth embodiment. Also, in the sixth embodiment, in order to avoid overlapping descriptions with the first to fifth embodiments, only the parts different from the first to fifth embodiments will be described, and the same configuration as the first to fifth embodiments will be described. Elements are described with the same reference numerals as in the first to fifth embodiments. The exposure apparatuses EX of the first to fifth embodiments detect the rotational position of the rotary drum DR using the scale parts GPa and GPb formed on the outer peripheral surface of the rotary drum DR. The exposure apparatus EX of the sixth embodiment detects the rotational position of the rotary drum DR using a highly rounded scale disk SD attached to the rotary drum DR.
如图17所示,此标尺圆盘SD,于外周面刻设有标尺部GPa、GPb,且于旋转卷筒DR端部固定成与旋转中心线AX2正交。因此,标尺圆盘SD,是绕旋转中心线AX2而与旋转卷筒DR一体地旋转。另外,标尺圆盘SD,是以低热膨张的金属、玻璃、陶瓷等作为母材,为了提高测量分解能力,尽可能作成较大的直径(例如直径20cm以上)。图17中,虽将标尺圆盘SD外周面的直径显示为较感光卷筒DR外周面的直径小,但能借由将标尺圆盘SD的标尺部GP的直径,设成与卷绕于旋转卷筒DR的基板P的外周面的直径一致(大致一致),而能更加缩小所谓的测量阿贝误差。As shown in FIG. 17 , the scale disk SD has scale portions GPa and GPb engraved on the outer peripheral surface, and is fixed to the end portion of the rotary drum DR so as to be perpendicular to the rotation center line AX2. Therefore, the scale disk SD rotates integrally with the rotary reel DR around the rotation center line AX2. In addition, the scale disk SD uses low thermal expansion metal, glass, ceramics, etc. as the base material, and in order to improve the measurement resolution, the diameter is as large as possible (for example, the diameter is 20 cm or more). In FIG. 17, although the diameter of the outer peripheral surface of the scale disk SD is shown to be smaller than the diameter of the outer peripheral surface of the photosensitive drum DR, it is possible to set the diameter of the scale portion GP of the scale disk SD to be the same as the diameter of the outer peripheral surface of the photosensitive drum DR. The diameters of the outer peripheral surfaces of the substrates P of the roll DR are uniform (substantially uniform), and the so-called measurement Abbe error can be further reduced.
以上,第6实施形态,由于能将不同个体的标尺圆盘SD安装于旋转卷筒DR,因此能选择适于旋转卷筒DR的标尺圆盘SD。另外,作为标尺圆盘SD,由于能利用于周方向的多处搭载有能微调真圆度的机构(按压螺丝等),因此能更加缩小标尺部GP的自旋转中心轴AX2起的偏心误差或标尺(绕射格子)的节距误差等所导致的测量误差(累积误差)。As described above, in the sixth embodiment, since individual scale disks SD can be attached to the rotating reel DR, the scale disk SD suitable for the rotating reel DR can be selected. In addition, since the scale disc SD can be used in multiple places in the circumferential direction with mechanisms (such as pressing screws) that can finely adjust the roundness, it is possible to further reduce the eccentricity error or the eccentricity from the rotation center axis AX2 of the scale portion GP. Measurement error (cumulative error) caused by pitch error of the scale (diffraction lattice), etc.
此外,第1至第6实施形态,虽是使用扫描点光的描绘装置11而于基板P形成有图案,但不限定于此构成,只要是于基板P形成图案的装置即可,例如,也可是使用透射型或反射型的平坦或圆筒状的光罩将来自光罩的投影光束投影曝光于基板P,以于基板P形成图案的投影曝光系。进而,也可是取代光罩而借由将能倾斜的多个微镜排列成矩阵状的数位微镜元件(DMD),而将与待描绘图案对应的光分布投影于基板P的无光罩方式的曝光装置。另外,作为于基板P形成图案的装置,例如也可是使用吐出墨水等液滴的喷射读头于基板P形成图案的喷墨方式的描绘装置。此种无光罩方式的曝光机或喷墨方式的描绘装置的场合也可如例如日本特开2010-091990号公报所揭示般,作为将与以DMD作成的图案对应的光分布投影至基板P的曝光部(图案形成部)的多个排列于基板P宽度方向的构成,或将具备喷墨方式的墨水喷嘴的液滴涂布部(图案形成部)的多个排列于基板P宽度方向的构成,采取使多个曝光部整体或多个液滴涂布部整体能相对基板P在XY面内相对旋转的构成。In addition, in the first to sixth embodiments, although the
另外,第1至第6实施形态中,虽是借由旋转机构24,在XY面内使将构成描绘装置11的多个描绘模组UW1~UW5固定的第2光学平台25旋转的构成,但为了将描绘线LL1~LL5的各条线在XY面内平行地调整或在XY面内使的具有既定倾斜地调整,也可设置能将描绘模组UW1~UW5的各个在第2光学平台25上于XY面内单独地微幅旋转的致动器(第2旋转机构、驱动机构)。此情形下,可设置用以测量描绘模组UW1~UW5(图案形成部)各个相对于第2光学平台25的旋转角度位置(倾斜量等)的单独角度测量感测器,能根据以一对编码器读头EN1或EN2等测量的第2光学平台25在XY面内的倾斜量与以单独角度测量感测器(第2检测装置)测量的描绘模组UW1~UW5各个的倾斜量的两者,调整描绘线LL1~LL5各个在基板P上的倾斜。因此,在使旋转卷筒DR旋转以将基板P以一定速度搬送于长条方向(X方向)搬送的期间,即使产生基板P在旋转卷筒DR上往Y方向些微位移的蛇行现象,而伴随于此使基板P的搬送方向些微倾斜时,由于也可借由对准显微镜AM1(或AM2)对对准标记Ks1~Ks3的位置检测逐次测量该倾斜,因此能以配合该倾斜使描绘线LL1~LL5分别倾斜的方式控制描绘模组UW1~UW5各自的致动器(驱动机构)。借此,即使在对已形成于基板P上的曝光区域A7的电子元件用基底图案(例如第1层图案)叠合新的图案时,于基板P的搬送中产生蛇行的情形,也能在基板P上的曝光区域A7全面良好地维持叠合精度。In addition, in the first to sixth embodiments, the second optical table 25 that fixes the plurality of drawing modules UW1 to UW5 constituting the
再者,第1至第6实施形态中,设有包含使支承描绘装置11的第2光学平台25与支承旋转卷筒DR的本体框架21在XY面内(或YZ面内)相对地微幅旋转的马达等的驱动机构(旋转机构24、三点座22的驱动部110、X移动机构121、Z移动机构122)。然而,也可非为马达等的电动操作,而是借由调整螺丝、微压计、厚度不同的垫圈的替换等手动操作,以将描绘装置11与旋转卷筒DR的空间上配置关系相对地微调的方式连结第2光学平台25与本体框架21的连结机构。具有此种手动操作的调整部的连结机构,例如在装置的组装时或保养检查时,将搭载有描绘装置11的第2光学平台25(第1光学平台23)从本体框架21卸除并再度通过三点座22安装于本体框架21的场合等,于微调三点座22各自在XYZ方向的位置时为有用。Furthermore, in the first to sixth embodiments, the second optical table 25 supporting the
<元件制造方法><Element manufacturing method>
其次,参照图18说明元件制造方法。图18是显示各实施形态的元件制造方法的流程图。Next, an element manufacturing method will be described with reference to FIG. 18 . FIG. 18 is a flowchart showing a device manufacturing method according to each embodiment.
图18所示的元件制造方法,首先,是进行例如使用有机EL等自发光元件形成的显示面板的功能、性能设计,以CAD等设计所需的电路图案及配线图案(步骤S201)。并准备卷绕有作为显示面板的基材的可挠性基板P(树脂薄膜、金属箔膜、塑胶等)的供应用卷筒(步骤S202)。此外,于此步骤S202中准备的卷筒状基板P,可以是视需要将其表面改质、或事前已形成底层(例如通过印记(imprint)方式的微小凹凸)、或预先积层有光感应性的功能膜或透明膜(绝缘材料)。The device manufacturing method shown in FIG. 18 firstly performs function and performance design of a display panel formed using self-luminous elements such as organic EL, and designs required circuit patterns and wiring patterns by CAD or the like (step S201 ). Then, a supply roll on which the flexible substrate P (resin film, metal foil film, plastic, etc.) serving as the base material of the display panel is wound is prepared (step S202 ). In addition, the roll-shaped substrate P prepared in this step S202 may have its surface modified as necessary, or a bottom layer (for example, micro unevenness by imprinting) may be formed in advance, or a photosensitive layer may be pre-laminated. functional film or transparent film (insulating material).
接着,于基板P上形成构成显示面板元件的以电极或配线、绝缘膜、TFT(薄膜半导体)等构成的底板层,并以积层于该底板的方式形成以有机EL等自发光元件构成的发光层(显示像素部)(步骤S203)。于此步骤S203中,也包含使用于先前各实施形态说明的曝光装置EX,对光阻剂层进行曝光的现有微影制程、对取代光阻剂而涂有感光性硅烷耦合剂的基板P进行图案曝光以于表面形成亲拨水性的图案的曝光制程、对光感应性的触媒层进行图案曝光以借由无电解镀敷法形成金属膜图案(配线、电极等)的湿式制程、或以含有银奈米粒子的导电性墨水等描绘图案的印刷制程等的处理。Next, a substrate layer composed of electrodes, wirings, insulating films, TFTs (thin film semiconductors), etc. that constitute display panel elements is formed on the substrate P, and a self-luminous element such as organic EL is formed by laminating on the substrate. the light-emitting layer (display pixel portion) (step S203). This step S203 also includes the conventional lithography process for exposing the photoresist layer using the exposure apparatus EX described in the previous embodiments, and the substrate P coated with the photosensitive silane coupling agent instead of the photoresist. Exposure process of pattern exposure to form hydrophilic and water repellent patterns on the surface, wet process of pattern exposure of photosensitive catalyst layer to form metal film patterns (wiring, electrodes, etc.) by electroless plating, or Processing such as a printing process in which a pattern is drawn with conductive ink containing silver nanoparticles.
接着,针对以卷筒方式于长条基板P上连续制造的每一显示面板元件切割基板P、或于各显示面板元件表面贴合保护膜(耐环境障壁层)或彩色滤光片膜等,组装元件(步骤S204)。接着,进行显示面板元件是否可正常作动、或是否满足所欲性能及特性的检查步骤(步骤S205)。经由以上方式,即能制造显示面板(可挠性显示器)。另外,除了如图18的显示面板的制造以外,在将精密配线图案(高密度配线)为必要的可挠性印刷基板、具有TFT等半导体元件与感测用电极图案的化学感测器片、或者DNA芯片等制造于可挠性基板P上时,也能使用上述各实施形态的曝光装置。Next, the substrate P is cut for each display panel element continuously manufactured on the elongated substrate P in a roll method, or a protective film (environmentally resistant barrier layer) or a color filter film is attached to the surface of each display panel element, etc., Components are assembled (step S204). Next, a step of checking whether the display panel elements can operate normally, or whether the desired performance and characteristics are satisfied (step S205 ) is performed. In the above manner, a display panel (flexible display) can be manufactured. In addition to the manufacture of the display panel as shown in FIG. 18, a flexible printed circuit board that requires precise wiring patterns (high-density wiring), chemical sensors including semiconductor elements such as TFTs, and electrode patterns for sensing When a sheet, a DNA chip, or the like is produced on the flexible substrate P, the exposure apparatuses of the above-described embodiments can also be used.
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010743918.0A CN111781807B (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus and device manufacturing method |
CN202010741934.6A CN111781806B (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-213786 | 2015-10-30 | ||
JP2015213786 | 2015-10-30 | ||
PCT/JP2016/081720 WO2017073608A1 (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus, substrate processing apparatus adjustment method, device production system, and device production method |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010741934.6A Division CN111781806B (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus |
CN202010743918.0A Division CN111781807B (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108351607A CN108351607A (en) | 2018-07-31 |
CN108351607B true CN108351607B (en) | 2020-07-10 |
Family
ID=58630287
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010743918.0A Active CN111781807B (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus and device manufacturing method |
CN202010741934.6A Active CN111781806B (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus |
CN201680063524.2A Active CN108351607B (en) | 2015-10-30 | 2016-10-26 | Substrate processing equipment |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010743918.0A Active CN111781807B (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus and device manufacturing method |
CN202010741934.6A Active CN111781806B (en) | 2015-10-30 | 2016-10-26 | Substrate processing apparatus |
Country Status (5)
Country | Link |
---|---|
JP (3) | JP6741018B2 (en) |
KR (2) | KR102220858B1 (en) |
CN (3) | CN111781807B (en) |
TW (2) | TWI745865B (en) |
WO (1) | WO2017073608A1 (en) |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08316135A (en) * | 1995-05-12 | 1996-11-29 | Nikon Corp | Projecting exposure system |
JP3884098B2 (en) * | 1996-03-22 | 2007-02-21 | 株式会社東芝 | Exposure apparatus and exposure method |
JP2001215718A (en) * | 1999-11-26 | 2001-08-10 | Nikon Corp | Exposure system and exposure method |
JP4202576B2 (en) * | 2000-03-23 | 2008-12-24 | 富士フイルム株式会社 | Scanning exposure equipment |
US7256811B2 (en) * | 2002-10-25 | 2007-08-14 | Kodak Graphic Communications Canada Company | Method and apparatus for imaging with multiple exposure heads |
JP2005026528A (en) * | 2003-07-03 | 2005-01-27 | Nikon Corp | Projection optical system, aligner, method for adjustment, and method for exposure |
JP2005316116A (en) * | 2004-04-28 | 2005-11-10 | Dainippon Screen Mfg Co Ltd | Apparatus and method for scanning outer surface of cylinder |
JP2006337614A (en) * | 2005-05-31 | 2006-12-14 | Fujifilm Holdings Corp | Drawing method and system |
JP4224479B2 (en) | 2005-09-07 | 2009-02-12 | 富士フイルム株式会社 | Pattern exposure method and apparatus |
KR100695228B1 (en) * | 2005-09-08 | 2007-03-14 | 세메스 주식회사 | Substrate Processing Apparatus and Method |
JP4948866B2 (en) | 2006-03-27 | 2012-06-06 | 富士フイルム株式会社 | Drawing state adjusting method and apparatus |
JP2007298603A (en) * | 2006-04-28 | 2007-11-15 | Shinko Electric Ind Co Ltd | Drawing device and drawing method |
JP2009116080A (en) * | 2007-11-07 | 2009-05-28 | Nsk Ltd | Exposure method and exposure apparatus |
WO2009150901A1 (en) * | 2008-06-09 | 2009-12-17 | シャープ株式会社 | Exposure apparatus and exposure method |
US8820234B2 (en) * | 2009-10-30 | 2014-09-02 | Esko-Graphics Imaging Gmbh | Curing of photo-curable printing plates with flat tops or round tops by variable speed exposure |
KR101784487B1 (en) * | 2011-07-13 | 2017-10-12 | 주식회사 원익아이피에스 | Apparatus of aligning substrate supporter and substrate processing system comprising the same, and method of aligning substrate supporter |
JPWO2013035661A1 (en) * | 2011-09-07 | 2015-03-23 | 株式会社ニコン | Substrate processing equipment |
JP6123252B2 (en) * | 2012-11-21 | 2017-05-10 | 株式会社ニコン | Processing apparatus and device manufacturing method |
KR101982460B1 (en) * | 2012-03-26 | 2019-05-27 | 가부시키가이샤 니콘 | Substrate processing device, processing device, and method for manufacturing device |
JP6074898B2 (en) * | 2012-03-26 | 2017-02-08 | 株式会社ニコン | Substrate processing equipment |
KR101812857B1 (en) * | 2012-08-28 | 2017-12-27 | 가부시키가이샤 니콘 | Substrate support device and exposure device |
JP2014081452A (en) * | 2012-10-16 | 2014-05-08 | Nikon Corp | Exposure apparatus and device manufacturing method |
KR102005701B1 (en) * | 2013-04-18 | 2019-07-30 | 가부시키가이샤 니콘 | Exposure apparatus, device manufacturing system, and device manufacturing method |
JP2015018006A (en) * | 2013-07-08 | 2015-01-29 | 株式会社ニコン | Substrate treatment apparatus, device production system, and device production method |
JP2015145990A (en) * | 2014-02-04 | 2015-08-13 | 株式会社ニコン | exposure apparatus |
TWI684836B (en) * | 2014-04-01 | 2020-02-11 | 日商尼康股份有限公司 | Pattern drawing device |
KR102387648B1 (en) * | 2014-04-01 | 2022-04-18 | 가부시키가이샤 니콘 | Exposure device |
-
2016
- 2016-10-26 CN CN202010743918.0A patent/CN111781807B/en active Active
- 2016-10-26 WO PCT/JP2016/081720 patent/WO2017073608A1/en active Application Filing
- 2016-10-26 KR KR1020187012118A patent/KR102220858B1/en active Active
- 2016-10-26 CN CN202010741934.6A patent/CN111781806B/en active Active
- 2016-10-26 CN CN201680063524.2A patent/CN108351607B/en active Active
- 2016-10-26 KR KR1020217005193A patent/KR102357198B1/en active Active
- 2016-10-26 JP JP2017547823A patent/JP6741018B2/en active Active
- 2016-10-28 TW TW109104739A patent/TWI745865B/en active
- 2016-10-28 TW TW105134908A patent/TWI689025B/en active
-
2019
- 2019-05-14 JP JP2019091674A patent/JP6733778B2/en active Active
-
2020
- 2020-06-30 JP JP2020112892A patent/JP6950787B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI689025B (en) | 2020-03-21 |
JP6950787B2 (en) | 2021-10-13 |
CN111781807A (en) | 2020-10-16 |
JP6741018B2 (en) | 2020-08-19 |
TW202025353A (en) | 2020-07-01 |
KR102357198B1 (en) | 2022-02-08 |
JP2020177239A (en) | 2020-10-29 |
WO2017073608A1 (en) | 2017-05-04 |
KR102220858B1 (en) | 2021-02-26 |
CN108351607A (en) | 2018-07-31 |
TWI745865B (en) | 2021-11-11 |
CN111781806A (en) | 2020-10-16 |
TW201724322A (en) | 2017-07-01 |
CN111781807B (en) | 2024-01-12 |
KR20210024206A (en) | 2021-03-04 |
JPWO2017073608A1 (en) | 2018-08-16 |
JP6733778B2 (en) | 2020-08-05 |
JP2019168705A (en) | 2019-10-03 |
KR20180075532A (en) | 2018-07-04 |
CN111781806B (en) | 2023-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI640835B (en) | Substrate processing apparatus, component manufacturing method, and adjustment method of substrate processing apparatus | |
JP6648798B2 (en) | Pattern drawing equipment | |
JP6680330B2 (en) | Pattern forming equipment | |
CN108351607B (en) | Substrate processing equipment | |
JP6413784B2 (en) | Substrate processing apparatus and device manufacturing method | |
JP6996580B2 (en) | Board processing method | |
HK1251046A1 (en) | Substrate processing apparatus, substrate processing apparatus adjustment method, device production system, and device production method | |
JP6750712B2 (en) | Substrate processing apparatus and device manufacturing method | |
HK1236632A1 (en) | Substrate processing device, device manufacturing system, and device manufacturing method | |
HK1236632B (en) | Substrate processing device, device manufacturing system, and device manufacturing method | |
HK40006712A (en) | Method for adjusting substrate-processing apparatus | |
HK1246407A1 (en) | Substrate-processing apparatus and adjusting method thereof, device manufacturing method, and direct writing exposure apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1251046 Country of ref document: HK |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1251046 Country of ref document: HK |