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CN106756849A - A kind of PCB with transition metal boride coating micro- brills and preparation method thereof - Google Patents

A kind of PCB with transition metal boride coating micro- brills and preparation method thereof Download PDF

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CN106756849A
CN106756849A CN201611193431.XA CN201611193431A CN106756849A CN 106756849 A CN106756849 A CN 106756849A CN 201611193431 A CN201611193431 A CN 201611193431A CN 106756849 A CN106756849 A CN 106756849A
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transition metal
metal boride
coating
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pcb
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CN106756849B (en
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唐永炳
蒋春磊
朱海莉
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Shenzhen Institute of Advanced Technology of CAS
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3435Applying energy to the substrate during sputtering
    • C23C14/345Applying energy to the substrate during sputtering using substrate bias
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23BTURNING; BORING
    • B23B51/00Tools for drilling machines
    • B23B51/02Twist drills
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067Borides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明提供了一种具有过渡金属硼化物涂层的PCB用微钻的制备方法,包括对微钻基体进行清洗处理,并将清洗后的微钻装入溅射镀膜设备,抽真空,开启加热装置,对微钻基体进行加热,之后对其表面进行离子轰击清洗;然后保持离子源仍工作的情况下,以溅射方式沉积过渡金属硼化物涂层,并在沉积过程中,通过调控沉积温度和设置在基体上的负偏压来实现热应力和生长应力的调节,从而得到低应力甚至零应力的过渡金属硼化物涂层。该涂层光滑致密,摩擦系数低,与基体的结合力较强,不易剥落,适用于PCB用微钻上硬质耐磨涂层的制备。本发明还提供了一种具有过渡金属硼化物涂层的PCB用微钻。

The invention provides a method for preparing a micro-drill for PCB with a transition metal boride coating, which includes cleaning the micro-drill substrate, loading the cleaned micro-drill into a sputtering coating device, vacuuming, and turning on heating The device heats the micro-drill substrate, and then performs ion bombardment cleaning on the surface; then, while the ion source is still working, deposits the transition metal boride coating by sputtering, and during the deposition process, by adjusting the deposition temperature The adjustment of thermal stress and growth stress can be achieved by using the negative bias voltage set on the substrate, so as to obtain a transition metal boride coating with low stress or even zero stress. The coating is smooth and compact, has a low coefficient of friction, strong binding force with the substrate, and is not easy to peel off, and is suitable for the preparation of a hard wear-resistant coating on a micro-drill for PCB. The invention also provides a micro drill for PCB with transition metal boride coating.

Description

一种具有过渡金属硼化物涂层的PCB用微钻及其制备方法A micro-drill for PCB with transition metal boride coating and preparation method thereof

技术领域technical field

本发明涉及印刷线路板(PCB)微钻涂层技术领域,特别是涉及一种具有过渡金属硼化物涂层的PCB用微钻及其制备方法。The invention relates to the technical field of printed circuit board (PCB) micro-drill coating, in particular to a micro-drill for PCB with a transition metal boride coating and a preparation method thereof.

背景技术Background technique

印刷线路板(Printed Circuit Board,PCB)是电子工业的核心组件,每年消耗量达数十亿支的PCB导通用微钻的品质成为PCB制造技术革新的核心问题。随着下游电子产品向轻、薄、小的方向发展,高精密、高集成、轻薄化成为PCB板的重要发展趋势,特别是随着无卤素PCB板和柔性PCB板等难加工材料的应用和高转速的技术要求,普通硬质合金微钻已难以满足PCB板的加工需求,易出现钻头磨损、折断、孔壁加工质量差、使用寿命短等问题。Printed Circuit Board (PCB) is the core component of the electronics industry. The quality of micro-drills for PCB conduction, which consumes billions of pieces each year, has become the core issue of PCB manufacturing technology innovation. With the development of downstream electronic products in the direction of lightness, thinness and smallness, high precision, high integration and thinness have become important development trends of PCB boards, especially with the application and application of difficult-to-process materials such as halogen-free PCB boards and flexible PCB boards Due to the high-speed technical requirements, ordinary carbide micro-drills are difficult to meet the processing requirements of PCB boards, and are prone to problems such as drill wear, breakage, poor hole wall processing quality, and short service life.

为了提高PCB微钻的加工性能,通常是采用电弧沉积技术在微钻表面制备一层或多层硬度较高的耐磨涂层(如TiN、CrN、TiAlN、类金刚石等)。但电弧沉积过程中由于液滴的喷射,在直径小至0.1mm的PCB微钻表面形成大颗粒的问题依然存在,增大了涂层的表面粗糙度,不利于排屑,还极易造成摩擦升温,导致PCB板低熔点物质熔化,出现粘刀现象,将大大降低孔壁加工质量。此外,沉积过程中的高能量轰击,导致涂层具有高的残余压应力,造成涂层易剥落,膜基结合力低,较高的残余应力易导致直径较小的钻身弯曲,在加工过程中容易发生脆断。因此,如何降低硬质涂层微钻的残余应力,提高膜基结合强度是带涂层的PCB微钻急需解决的关键问题。In order to improve the processing performance of PCB micro-drills, arc deposition technology is usually used to prepare one or more layers of wear-resistant coatings with high hardness (such as TiN, CrN, TiAlN, diamond-like carbon, etc.) on the surface of micro-drills. However, due to the spraying of droplets during the arc deposition process, the problem of forming large particles on the surface of PCB micro-drills with a diameter as small as 0.1mm still exists, which increases the surface roughness of the coating, which is not conducive to chip removal, and easily causes friction. The temperature rise will lead to the melting of low melting point substances on the PCB board, and the knife sticking phenomenon will occur, which will greatly reduce the processing quality of the hole wall. In addition, the high-energy bombardment during the deposition process leads to high residual compressive stress in the coating, which causes the coating to peel off easily, and the film-base bonding force is low. High residual stress easily leads to bending of the drill body with a smaller diameter. prone to brittle fracture. Therefore, how to reduce the residual stress of hard-coated micro-drills and improve the bonding strength of the film base is a key problem that needs to be solved urgently for coated PCB micro-drills.

发明内容Contents of the invention

有鉴于此,本发明提供了一种PCB用低应力过渡金属硼化物涂层微钻及其制备方法,以解决现有技术中PCB硬质涂层残余应力高,膜层易剥落,膜基结合强度低的问题。In view of this, the present invention provides a low-stress transition metal boride coating micro-drill for PCB and its preparation method to solve the problem of high residual stress of PCB hard coating in the prior art, easy peeling of the film layer, and combination of film and base. The problem of low intensity.

第一方面,本发明提供了一种具有过渡金属硼化物涂层的PCB用微钻,包括微钻基体,以及设置在所述微钻基体上的过渡金属硼化物涂层,所述过渡金属硼化物涂层的残余应力的绝对值小于0.3GPa。In a first aspect, the present invention provides a micro-drill for PCB with a transition metal boride coating, including a micro-drill substrate, and a transition metal boride coating disposed on the micro-drill substrate, the transition metal boride The absolute value of the residual stress of the compound coating is less than 0.3GPa.

优选地,所述过渡金属硼化物涂层的残余应力的绝对值为0.05~0.1GPa,更优选为0GPa。Preferably, the absolute value of the residual stress of the transition metal boride coating is 0.05-0.1 GPa, more preferably 0 GPa.

优选地,所述过渡金属硼化物涂层的厚度为0.2~4μm。进一步优选为0.3~3.5μm。在沉积速率一定的情况下,涂层的厚度主要由沉积时间来决定,沉积时间越长,涂层厚度越大。Preferably, the transition metal boride coating has a thickness of 0.2-4 μm. More preferably, it is 0.3 to 3.5 μm. When the deposition rate is constant, the thickness of the coating is mainly determined by the deposition time, the longer the deposition time, the greater the thickness of the coating.

更优选地,所述过渡金属硼化物涂层的厚度为0.8~2μm。More preferably, the thickness of the transition metal boride coating is 0.8-2 μm.

优选地,所述过渡金属硼化物涂层中,过渡金属硼化物的晶粒尺寸为10~50nm。Preferably, in the transition metal boride coating, the grain size of the transition metal boride is 10-50 nm.

优选地,所述具有过渡金属硼化物涂层的PCB用微钻在10gf载荷下的硬度为20-40GPa。Preferably, the micro-drill for PCB with transition metal boride coating has a hardness of 20-40GPa under a load of 10gf.

优选地,所述PCB用微钻上的过渡金属硼化物涂层的断裂韧性为2-4MPa·m1/2Preferably, the fracture toughness of the transition metal boride coating on the PCB micro-drill is 2-4 MPa·m 1/2 .

优选地,以GCr15作为摩擦副,所述PCB用微钻上的过渡金属硼化物涂层在10N的载荷下的摩擦系数为0.2-0.5。Preferably, using GCr15 as the friction pair, the friction coefficient of the transition metal boride coating on the PCB micro-drill is 0.2-0.5 under a load of 10N.

优选地,所述微钻基体的材质为硬质合金。硬质合金可以是以高硬度难熔金属的碳化物(碳化钨、碳化钛)微米级粉末为主要成分,以钴、镍或钼为粘结剂烧结成的粉末冶金制品,钴在硬质合金中的质量含量一般为6wt.%-10wt.%。Preferably, the material of the micro-drill substrate is cemented carbide. Cemented carbide can be a powder metallurgy product sintered with high-hardness refractory metal carbide (tungsten carbide, titanium carbide) micron powder as the main component and sintered with cobalt, nickel or molybdenum as the binder. The mass content in is generally 6wt.%-10wt.%.

本发明中,所述硬质合金可以是碳化钨基硬质合金、碳化钛基硬质合金、碳氮化钛基硬质合金、碳化铬基硬质合金中的一种。In the present invention, the cemented carbide can be one of tungsten carbide-based cemented carbide, titanium carbide-based cemented carbide, titanium carbonitride-based cemented carbide, and chromium carbide-based cemented carbide.

优选地,所述过渡金属硼化物涂层的材质为二硼化钛、二硼化锆、二硼化钒、二硼化铌、二硼化钽、二硼化铬、二硼化钼和二硼化钨中的一种或多种。进一步优选为二硼化钛。所述过渡金属硼化物涂层的热膨胀系数大于微钻基体的热膨胀系数,形成具有拉应力状态的热应力,刚好与具有压应力状态的生长应力相互抵消(热内力与生长应力的方向相反,数值接近),可以有效降低涂层的残余应力。Preferably, the material of the transition metal boride coating is titanium diboride, zirconium diboride, vanadium diboride, niobium diboride, tantalum diboride, chromium diboride, molybdenum diboride and diboride One or more of tungsten borides. Titanium diboride is more preferred. The thermal expansion coefficient of the transition metal boride coating is greater than the thermal expansion coefficient of the micro-drilling substrate, forming a thermal stress with a state of tensile stress, which just cancels out the growth stress with a state of compressive stress (the thermal internal force is opposite to the direction of the growth stress, and the value approach), which can effectively reduce the residual stress of the coating.

本发明第一方面提供的具有过渡金属硼化物涂层的PCB用微钻,通过在微钻基体上沉积过渡金属硼化物涂层,所述涂层光滑致密,摩擦系数低,该涂层与基体的结合强,硬度高、韧性好、可以提高微钻的使用寿命高。The first aspect of the present invention provides a micro-drill for PCB with a transition metal boride coating, by depositing a transition metal boride coating on the micro-drill substrate, the coating is smooth and dense, and the coefficient of friction is low, and the coating and the substrate The combination is strong, high hardness, good toughness, can improve the service life of the micro drill.

第二方面,本发明提供了一种具有过渡金属硼化物涂层的PCB用微钻的制备方法,包括以下步骤:In a second aspect, the present invention provides a method for preparing a micro-drill for PCB with a transition metal boride coating, comprising the following steps:

(1)取PCB用微钻基体,对其进行清洗处理;(1) Take the micro-drill substrate for PCB and clean it;

将所述清洗后的微钻基体置于溅射镀膜设备的真空室内,将所述真空室的气压抽至5×10-3Pa以下后,开始对真空室进行加热使基体温度达到350-600℃;Place the cleaned micro-drill substrate in the vacuum chamber of the sputter coating equipment, pump the air pressure of the vacuum chamber below 5× 10-3 Pa, and start heating the vacuum chamber to make the substrate temperature reach 350-600 ℃;

打开离子源,通入氩气,对基体进行离子轰击清洗10-30min;Turn on the ion source, pass in argon gas, and perform ion bombardment cleaning on the substrate for 10-30 minutes;

(2)保持所述离子源继续工作,通入氩气,采用过渡金属硼化物作为溅射靶材,以溅射方式在所述离子轰击清洗后的基体表面沉积过渡金属硼化物涂层,其中,沉积过程中在基体上加载负偏压,所述负偏压为0V~-300V,沉积温度为350~600℃;所述溅射靶的功率密度为2~20W/cm2;所述离子源的工作电流为20~30A,工作电压为50~100V;通过调节所述沉积温度和负偏压使所述过渡金属硼化物涂层的残余应力的绝对值小于0.3GPa;(2) keep the ion source to continue to work, feed argon gas, adopt transition metal boride as sputtering target material, deposit transition metal boride coating on the substrate surface after described ion bombardment cleaning by sputtering, wherein , loading a negative bias voltage on the substrate during the deposition process, the negative bias voltage is 0V~-300V, the deposition temperature is 350~600°C; the power density of the sputtering target is 2~20W/cm 2 ; the ion The operating current of the source is 20-30A, and the operating voltage is 50-100V; by adjusting the deposition temperature and negative bias voltage, the absolute value of the residual stress of the transition metal boride coating is less than 0.3GPa;

(3)沉积结束后,冷却取样,得到具有过渡金属硼化物涂层的PCB用微钻。(3) After the deposition is finished, the sample is cooled to obtain a micro-drill for PCB with a transition metal boride coating.

优选地,所述微钻基体的清洗处理包括:将所述微钻基体依次采用丙酮、乙醇、水进行超声清洗,并吹干。Preferably, the cleaning treatment of the micro-drill substrate includes: ultrasonically cleaning the micro-drill substrate sequentially with acetone, ethanol, and water, and blowing it dry.

本发明中,在进行溅射过渡金属硼化物涂层之前,采用离子轰击清洗的目的是去除工件表面的污染物和氧化膜,以露出新鲜表面,以便后续更好地沉积成膜。In the present invention, before sputtering the transition metal boride coating, the purpose of using ion bombardment cleaning is to remove the pollutants and oxide film on the surface of the workpiece to expose a fresh surface for better subsequent film deposition.

优选地,所述打开离子源时,所述真空室内的气压在3×10-3Pa以下。Preferably, when the ion source is turned on, the air pressure in the vacuum chamber is below 3×10 -3 Pa.

优选地,步骤(1)中,所述氩气的工作压强为0.5~1.0Pa。Preferably, in step (1), the working pressure of the argon gas is 0.5-1.0 Pa.

优选地,步骤(1)中,离子轰击清洗时,所述氩气的流量为100~200sccm。Preferably, in step (1), during ion bombardment cleaning, the flow rate of the argon gas is 100-200 sccm.

优选地,所述离子轰击清洗时,所述离子源的工作电流为20~30A,工作电压为50~100V。Preferably, during the ion bombardment cleaning, the working current of the ion source is 20-30A, and the working voltage is 50-100V.

优选地,所述溅射方式为非平衡磁控溅射沉积。Preferably, the sputtering method is unbalanced magnetron sputtering deposition.

本申请中,偏压是指在基底上施加的电势。在沉积的基体上接偏压电源的负极,则称为加载负偏压。In this application, a bias voltage refers to an applied potential on a substrate. Connecting the negative pole of the bias power supply on the deposited substrate is called negative bias.

本申请在过渡金属硼化物涂层的溅射沉积过程中,采用了离子源进行辅助沉积,提高了离化率和沉积区的等离子体密度,在沉积过程中由于负偏压的作用,可以对基底表面进行有效的正离子轰击,有利于提高沉积粒子(主要是指从溅射靶材表面溅射出来,并沉积到基底表面的靶材原子、原子团等)的动能,使基体表面不断沉积的粒子与表层原子发生冶金结合,增强基底表面吸附的原子在基底表面的扩散能力,进而可以有效提高涂层的膜基结合强度。In the sputtering deposition process of the transition metal boride coating, the application uses an ion source for auxiliary deposition, which improves the ionization rate and the plasma density in the deposition area. Due to the negative bias during the deposition process, it can Effective positive ion bombardment on the surface of the substrate is beneficial to increase the kinetic energy of the deposited particles (mainly referring to the target atoms, atomic groups, etc. sputtered from the surface of the sputtering target and deposited on the surface of the substrate), so that the continuous deposition on the surface of the substrate The metallurgical bonding between the particles and the surface atoms enhances the diffusion ability of the atoms adsorbed on the substrate surface on the substrate surface, thereby effectively improving the film-base bonding strength of the coating.

优选地,步骤(2)中,所述氩气的气体流量为60~100sccm。Preferably, in step (2), the gas flow rate of the argon is 60-100 sccm.

优选地,所述微钻基体的材质为硬质合金。Preferably, the material of the micro-drill substrate is cemented carbide.

优选地,所述过渡金属硼化物选自二硼化钛、二硼化锆、二硼化钒、二硼化铌、二硼化钽、二硼化铬、二硼化钼和二硼化钨中的一种或多种。Preferably, the transition metal boride is selected from titanium diboride, zirconium diboride, vanadium diboride, niobium diboride, tantalum diboride, chromium diboride, molybdenum diboride and tungsten diboride one or more of.

涂层的残余应力主要由热应力和生长应力两部分组成,其中热应力主要是由于涂层与基体的热膨胀系数不匹配造的,而生长应力则是由于物理气相沉积技术的非平衡特性以及离子轰击引入的晶格畸变、缺陷、位错等导致。降低热应力通常需要降低涂层的沉积温度,而较低的沉积温度则会恶化涂层的微观结构和力学性能;对涂层的后续退火处理也对降低涂层的生长应力有一定作用,但采用低温退火的时间长,增大了制造成本,不适用于PCB用微钻的生产。The residual stress of the coating is mainly composed of thermal stress and growth stress. The thermal stress is mainly caused by the mismatch between the thermal expansion coefficient of the coating and the substrate, while the growth stress is due to the non-equilibrium characteristics of physical vapor deposition technology and ion stress. Lattice distortions, defects, dislocations, etc. introduced by the bombardment. Reducing thermal stress usually requires lowering the deposition temperature of the coating, and lower deposition temperature will deteriorate the microstructure and mechanical properties of the coating; the subsequent annealing treatment of the coating also has a certain effect on reducing the growth stress of the coating, but The low-temperature annealing takes a long time, increases the manufacturing cost, and is not suitable for the production of micro-drills for PCBs.

由于过渡金属硼化物(例如TiB2)的热膨胀系数为8.1×10-6/K,硬质合金的热膨胀系数约为4.5×10-6/K,由于TiB2的热膨胀系数大于硬质合金,因而在高于室温的条件下进行溅射沉积后,所得涂层中热应力为拉应力,而生长应力为压应力,拉应力和压应力的方向相反,本发明中首次通过调节沉积温度以及偏压来实现热应力和生长应力大小的调节,从而得到低残余应力甚至零残余应力的过渡金属硼化物涂层。Since the thermal expansion coefficient of transition metal borides (such as TiB 2 ) is 8.1×10 -6 /K, the thermal expansion coefficient of cemented carbide is about 4.5×10 -6 /K, because the thermal expansion coefficient of TiB 2 is greater than that of cemented carbide, so After sputtering deposition at a temperature higher than room temperature, the thermal stress in the resulting coating is tensile stress, while the growth stress is compressive stress, and the directions of tensile stress and compressive stress are opposite. To realize the adjustment of thermal stress and growth stress, so as to obtain transition metal boride coating with low residual stress or even zero residual stress.

本申请中,所述沉积过程中的温度为350~600℃,沉积过程中在基体上设置的负偏压为0V~-200V。In the present application, the temperature during the deposition process is 350-600°C, and the negative bias voltage set on the substrate during the deposition process is 0V-200V.

优选地,所述沉积过程中的温度为450~550℃。Preferably, the temperature in the deposition process is 450-550°C.

进一步优选地,当所述过渡金属硼化物涂层为二硼化钛时,所述沉积温度为450~550℃,所述负偏压为-10~-100V。Further preferably, when the transition metal boride coating is titanium diboride, the deposition temperature is 450-550° C., and the negative bias voltage is -10-100V.

进一步地,当沉积温度为550℃时,热应力可以达到1.29GPa,此时采用的负偏压优选为-50~-100V,生长应力为-1.17~-1.45GPa,所得涂层的残余应力可达到0.12~-0.16GPa,进一步优选地,负偏压优选为-60~-80V,此时生长应力为-1.226~-1.338GPa,所得涂层的残余应力可达到0.064~-0.048GPa。更优选地,当负偏压为-71V时,所得涂层的残余应力可以达到0GPa。Furthermore, when the deposition temperature is 550°C, the thermal stress can reach 1.29GPa, the negative bias voltage used at this time is preferably -50~-100V, the growth stress is -1.17~-1.45GPa, and the residual stress of the obtained coating can be It reaches 0.12~-0.16GPa, more preferably, the negative bias voltage is preferably -60~-80V, at this time, the growth stress is -1.226~-1.338GPa, and the residual stress of the obtained coating can reach 0.064~-0.048GPa. More preferably, when the negative bias voltage is -71V, the residual stress of the resulting coating can reach 0GPa.

进一步地,当沉积温度为500℃时,热应力可以达到1.17GPa,此时采用的负偏压优选为-30~-70V,生长应力为-1.058~-1.282GPa,所得涂层的残余应力可达到0.112~-0.112GPa,进一步优选地,负偏压优选为-40~-60V,此时生长应力为-1.114~-1.226GPa,所得涂层的残余应力可达到0.056~-0.056GPa。更优选地,当负偏压为-50V时,所得涂层的残余应力可以达到0GPa。Further, when the deposition temperature is 500°C, the thermal stress can reach 1.17GPa, the negative bias voltage used at this time is preferably -30~-70V, the growth stress is -1.058~-1.282GPa, and the residual stress of the obtained coating can be It reaches 0.112~-0.112GPa, more preferably, the negative bias is preferably -40~-60V, at this time, the growth stress is -1.114~-1.226GPa, and the residual stress of the obtained coating can reach 0.056~-0.056GPa. More preferably, when the negative bias voltage is -50V, the residual stress of the resulting coating can reach 0GPa.

进一步地,当沉积温度为450℃时,热应力可以达到1.04GPa,此时采用的负偏压优选为-10~-40V,生长应力为-0.946~-1.114GPa,所得涂层的残余应力可达到0.094~-0.074GPa,进一步优选地,负偏压优选为-20~-30V,此时生长应力为-1.002~-1.058GPa,所得涂层的残余应力可达到0.038~-0.018GPa。更优选地,当负偏压为-27V时,所得涂层的残余应力可以达到0GPa。Further, when the deposition temperature is 450°C, the thermal stress can reach 1.04GPa, the negative bias voltage used at this time is preferably -10~-40V, the growth stress is -0.946~-1.114GPa, and the residual stress of the obtained coating can be It reaches 0.094~-0.074GPa, more preferably, the negative bias is preferably -20~-30V, at this time, the growth stress is -1.002~-1.058GPa, and the residual stress of the obtained coating can reach 0.038~-0.018GPa. More preferably, when the negative bias voltage is -27V, the residual stress of the obtained coating can reach 0GPa.

优选地,所述过渡金属硼化物涂层的厚度为0.2~4μm。进一步优选为0.3~3.5μm。Preferably, the transition metal boride coating has a thickness of 0.2-4 μm. More preferably, it is 0.3 to 3.5 μm.

本发明一实施方式中,当所述过渡金属硼化物涂层为二硼化钨时,所述沉积温度为450℃时,所述负偏压为-15V。此时,二硼化钨涂层的残余应力接近0GPa。In one embodiment of the present invention, when the transition metal boride coating is tungsten diboride and the deposition temperature is 450° C., the negative bias voltage is -15V. At this time, the residual stress of the tungsten diboride coating is close to 0GPa.

本发明一实施方式中,当所述过渡金属硼化物涂层为二硼化铬时,所述沉积温度为550℃时,所述负偏压为-255V。此时,二硼化铬涂层的残余应力接近0GPa。In one embodiment of the present invention, when the transition metal boride coating is chromium diboride, and the deposition temperature is 550° C., the negative bias voltage is -255V. At this time, the residual stress of the chromium diboride coating is close to 0GPa.

本发明第二方面提供的方法中,在进行溅射过渡金属硼化物涂层时,采用离子源进行辅助沉积,采用合适的沉积温度,并根据不同沉积温度来调控加载在基体上的负偏压,来实现热应力和生长应力大小的调节,使它们几乎相互抵消,从而得到低应力甚至零应力的、光滑致密的过渡金属硼化物涂层,进而使涂层与基体的结合力较强,使用过程中不易剥落。既不影响涂层的微观结构,还无需增加退火工序,也不受腔体、挂具尺寸以及装炉量的限制。该方法非常适用于PCB用微钻硬质耐磨涂层的制备。In the method provided by the second aspect of the present invention, when sputtering the transition metal boride coating, an ion source is used for auxiliary deposition, an appropriate deposition temperature is adopted, and the negative bias voltage loaded on the substrate is adjusted according to different deposition temperatures , to achieve the adjustment of thermal stress and growth stress, so that they almost cancel each other, so as to obtain a smooth and dense transition metal boride coating with low stress or even zero stress, and then make the coating and the substrate have a stronger bonding force. It is not easy to peel off in the process. It does not affect the microstructure of the coating, does not need to increase the annealing process, and is not limited by the size of the cavity, the hanger and the amount of the furnace. The method is very suitable for the preparation of micro-drill hard wear-resistant coatings for PCBs.

本发明的优点将会在下面的说明书中部分阐明,一部分根据说明书是显而易见的,或者可以通过本发明实施例的实施而获知。The advantages of the present invention will be partly clarified in the following description, and part of them will be obvious from the description, or can be known through the implementation of the embodiments of the present invention.

附图说明Description of drawings

图1为本发明实施例中具有过渡金属硼化物涂层的PCB用微钻的结构示意图,图1中,20为微钻基体,10为过渡金属硼化物涂层;Fig. 1 is the schematic structural representation of the PCB micro-drill with transition metal boride coating in the embodiment of the present invention, and in Fig. 1, 20 is micro-drill substrate, and 10 is transition metal boride coating;

图2为本发明实施例中所得具有过渡金属硼化物涂层的PCB用微钻的正视图;Fig. 2 is the front view of the PCB micro-drill with transition metal boride coating obtained in the embodiment of the present invention;

图3为本发明实施例1中YG6硬质合金基体上TiB2涂层的热应力随温度变化的关系曲线;Fig. 3 is the relationship curve of the thermal stress of the TiB coating on the YG6 cemented carbide substrate as a function of temperature in Example 1 of the present invention;

图4为本发明实施例1中YG6硬质合金基体上TiB2涂层的生长应力随负偏压变化的关系曲线;Fig. 4 is the relationship curve of the growth stress of the TiB coating on the YG6 cemented carbide substrate as the negative bias changes in Example 1 of the present invention;

图5为本发明实施例1中过渡金属硼化物涂层的扫描电子显微镜(SEM)照片;Fig. 5 is the scanning electron microscope (SEM) photo of transition metal boride coating in the embodiment 1 of the present invention;

图6为本发明实施例1中,洛氏压痕法对所得过渡金属硼化物涂层的光学形貌表征图。FIG. 6 is an optical morphology characterization diagram of the transition metal boride coating obtained by the Rockwell indentation method in Example 1 of the present invention.

具体实施方式detailed description

以下所述是本发明实施例的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明实施例原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明实施例的保护范围。The following descriptions are preferred implementations of the embodiments of the present invention. It should be pointed out that those skilled in the art can make some improvements and modifications without departing from the principles of the embodiments of the present invention. These improvements And retouching are also regarded as the scope of protection of the embodiments of the present invention.

实施例1Example 1

一种具有过渡金属硼化物涂层的PCB用微钻的制备方法,包括以下步骤:A preparation method for a PCB micro-drill with a transition metal boride coating, comprising the following steps:

(1)前处理:以国内市场上出售的YG6(WC-6%Co)硬质合金微型钻头作为基体,首先将微钻放入丙酮溶液中进行超声清洗10~20min,之后再放入酒精溶液中进行超声清洗10~20min,然后用干燥氮气将表面吹干,然后再将刀片放入真空干燥箱中烘干;(1) Pretreatment: Use the YG6 (WC-6% Co) cemented carbide micro-drill sold in the domestic market as the substrate, first put the micro-drill into the acetone solution for ultrasonic cleaning for 10-20 minutes, and then put it into the alcohol solution Ultrasonic cleaning for 10 to 20 minutes, then dry the surface with dry nitrogen, and then put the blade in a vacuum drying oven to dry;

(2)装炉:打开溅射镀膜设备的真空室门,将微钻装夹在夹具上;(2) Furnace loading: open the vacuum chamber door of the sputter coating equipment, and clamp the micro drill on the fixture;

(3)抽真空:关闭真空室门,打开水冷机将磁控靶、分子泵、真空腔室的水路接通,打开空压机和镀膜机总电源,然后开启机械泵和前级阀对分子泵抽真空,当分子泵前级真空抽到3Pa以下时,启动分子泵;然后关闭前级阀,并开启粗抽阀对真空室进行粗抽;当真空室内压强达到10Pa以下后,开启前级阀同时对真空腔室和分子泵进行抽低真空,当真空室内压强达到3Pa以下后,关闭粗抽阀,并打开插板阀对真空室进行抽高真空;(3) Vacuuming: close the door of the vacuum chamber, open the water cooler to connect the magnetron target, molecular pump, and the water circuit of the vacuum chamber, turn on the main power supply of the air compressor and coating machine, and then turn on the mechanical pump and the fore-stage valve for molecular Pump vacuum, when the vacuum of the front stage of the molecular pump is below 3Pa, start the molecular pump; then close the front valve, and open the rough valve to rough the vacuum chamber; when the pressure in the vacuum chamber reaches below 10Pa, open the front stage The valve simultaneously pumps the vacuum chamber and the molecular pump to a low vacuum. When the pressure in the vacuum chamber reaches below 3Pa, close the rough pump valve and open the slide valve to pump the vacuum chamber to a high vacuum;

(4)加热:当高真空抽到5.0×10-3Pa以后,开启加热装置对真空室进行加热烘烤使微钻基体的温度达到500℃,并在加热过程中开启转架系统,使样品进行公自传;(4) Heating: When the high vacuum reaches 5.0×10 -3 Pa, turn on the heating device to heat and bake the vacuum chamber so that the temperature of the micro-drill substrate reaches 500°C, and turn on the turret system during the heating process to make the sample conduct public autobiography;

(5)离子刻蚀清洗:当真空室真空度达到了3.0×10-3Pa以下时,通入150sccm的氩气,工作气压为0.8Pa,然后开启离子源进行刻蚀清洗,离子源工作电流为30A,工作电压为100V,离子源刻蚀清洗时间为20min;(5) Ion etching cleaning: When the vacuum degree of the vacuum chamber reaches below 3.0×10 -3 Pa, argon gas of 150 sccm is introduced, and the working pressure is 0.8 Pa, and then the ion source is turned on for etching cleaning, and the working current of the ion source is 30A, working voltage 100V, ion source etching and cleaning time 20min;

(6)涂层沉积:保持离子源继续工作,同时开启二鹏化钛TiB2溅射靶材,进行TiB2涂层的沉积,沉积过程中离子源工作电流为30A,工作电压为100V,溅射靶的功率密度为10W/cm2,加载在基体上的负偏压为-50V,沉积温度为500℃,所得涂层厚度为2μm;(6) Coating deposition: Keep the ion source to continue to work, and at the same time turn on the TiB 2 sputtering target to deposit the TiB 2 coating. During the deposition process, the working current of the ion source is 30A, and the working voltage is 100V. The power density of the shooting target is 10W/cm 2 , the negative bias voltage loaded on the substrate is -50V, the deposition temperature is 500°C, and the thickness of the obtained coating is 2μm;

(7)出炉:涂层沉积结束后,关闭溅射电源以及偏压电源,然后关闭气体质量流量计和气瓶主阀和减压阀;设置降温程序,待温度降到100℃以下后,关闭真空泵组和抽气阀,然后关闭水冷机和设备总电源;打开放气阀,待真空室内压强与外界气压一致时,打开真空室门,然后将加工后的微钻取出,得到具有过渡金属硼化物涂层的PCB用微钻。(7) Out of the furnace: after the coating deposition is completed, turn off the sputtering power supply and the bias power supply, then turn off the gas mass flowmeter, the main valve of the gas cylinder and the pressure reducing valve; set the cooling program, and turn off the vacuum pump after the temperature drops below 100°C group and exhaust valve, then turn off the water cooler and the main power supply of the equipment; open the vent valve, and when the pressure in the vacuum chamber is consistent with the external air pressure, open the door of the vacuum chamber, and then take out the processed micro-drill to obtain a transition metal boride Coated PCB with micro drill.

图1为本发明实施例中具有过渡金属硼化物涂层的PCB用微钻的结构示意图,图中,20为微钻基体,10为过渡金属硼化物涂层(本实施例中为TiB2),10层的厚度为2μm。图2为本发明实施例中所得具有过渡金属硼化物涂层的PCB用微钻的正视图。Fig. 1 is the schematic structural representation of the PCB micro-drill with transition metal boride coating in the embodiment of the present invention, among the figure, 20 is micro-drill substrate, and 10 is transition metal boride coating (TiB in the present embodiment 2 ) , 10 layers with a thickness of 2 μm. Fig. 2 is a front view of the micro drill for PCB with transition metal boride coating obtained in the embodiment of the present invention.

对本发明实施例中过渡金属硼化物涂层的微观形貌进行扫描电子显微镜(SEM)表征,其结果如图5所示。从图5可以看出,所得过渡金属硼化物涂层光滑致密,粗糙度低,不存在电弧离子镀技术所带来的大颗粒问题。The microscopic morphology of the transition metal boride coating in the embodiment of the present invention was characterized by a scanning electron microscope (SEM), and the results are shown in FIG. 5 . It can be seen from Figure 5 that the obtained transition metal boride coating is smooth and dense, with low roughness, and there is no problem of large particles caused by arc ion plating technology.

采用洛氏压痕法对本实施例制得的过渡金属硼化物涂层进行测试,其结果如图6所示。图6的洛氏压痕试验表明,涂层的膜基结合强度可以达到HF1级(即有裂纹,无剥落)。测得涂层的残余应力接近0GPa,膜/基结合强度能达(划痕结合力)为60N,在10gf载荷下表面复合硬度(涂层+基体)可达24GPa;以GCr15作为摩擦副,在10N的载荷下的摩擦系数为0.3。The transition metal boride coating prepared in this embodiment was tested by the Rockwell indentation method, and the results are shown in FIG. 6 . The Rockwell indentation test in Figure 6 shows that the film-base bonding strength of the coating can reach HF1 level (that is, there are cracks and no peeling off). The measured residual stress of the coating is close to 0GPa, the film/substrate bonding strength (scratch bonding force) can reach 60N, and the surface composite hardness (coating + substrate) can reach 24GPa under a load of 10gf; GCr15 is used as the friction pair. The coefficient of friction under a load of 10N was 0.3.

以上结果表明,本发明提供的制备方法所制得的过渡金属硼化物涂层具有较高的膜/基结合强度,膜层不易剥落,可以提高PCB用微钻的使用寿命。The above results show that the transition metal boride coating prepared by the preparation method provided by the invention has higher film/substrate bonding strength, the film layer is not easy to peel off, and the service life of the micro drill for PCB can be improved.

此外,在与本实施条件相同的条件下,当沉积温度为550℃时,热应力可以达到1.29GPa,此时当加载在基体上的负偏压为-71V时,生长应力也可以达到-1.29GPa,所得涂层的残余应力可以达到0GPa。当沉积温度为450℃时,热应力可以达到1.04GPa,此时当加载在基体上的负偏压为-27V时,生长应力也可以达到-1.04GPa,所得涂层的残余应力可以达到0GPa。In addition, under the same conditions as this implementation, when the deposition temperature is 550°C, the thermal stress can reach 1.29GPa. At this time, when the negative bias applied to the substrate is -71V, the growth stress can also reach -1.29GPa. GPa, the residual stress of the resulting coating can reach 0GPa. When the deposition temperature is 450°C, the thermal stress can reach 1.04GPa. At this time, when the negative bias applied to the substrate is -27V, the growth stress can also reach -1.04GPa, and the residual stress of the obtained coating can reach 0GPa.

图3为本发明实施例中YG6硬质合金基体上TiB2涂层的热应力随温度变化的关系曲线;图4为本发明实施例中YG6硬质合金基体上TiB2涂层的生长应力随负偏压变化的关系曲线。其中,图3根据热应力公式计算得出,图4是实验测试得出不同偏压下的残余应力大小(其中,残余应力=热应力+生长应力(考虑它们的方向),故而残余应力减掉指定沉积温度下的热应力就可以获得不同偏压下的生长应力。需要说明的是,本发明中将具有拉应力状态的热应力的方向定义为正(可以理解为XY平面沿一个方向向外拉伸),具有压应力状态的生长应力为负。Fig. 3 is the relationship curve of the thermal stress of the TiB2 coating on the YG6 cemented carbide substrate in the embodiment of the present invention with temperature; Fig. 4 is the growth stress of the TiB2 coating on the YG6 cemented carbide substrate in the embodiment of the present invention The relationship curve of negative bias voltage change. Among them, Fig. 3 is calculated according to the thermal stress formula, and Fig. 4 is the magnitude of residual stress under different bias voltages (wherein, residual stress = thermal stress + growth stress (considering their direction), so the residual stress is subtracted from The thermal stress under the designated deposition temperature just can obtain the growth stress under different bias.It should be noted that, the direction of the thermal stress with tensile stress state is defined as positive in the present invention (can be understood as XY plane outward along a direction Tensile), growth stress with compressive stress state is negative.

其中,图3中,热应力Y1与沉积温度T的线性关系式为Y1=0.00245T-0.06;图4中,生长应力Y2与负偏压U(绝对值)的线性关系式为Y2=-0.0056U-0.89。Wherein, in Fig. 3, the linear relationship between thermal stress Y1 and deposition temperature T is Y1 = 0.00245T-0.06; in Fig. 4, the linear relationship between growth stress Y2 and negative bias U (absolute value) is Y2 = -0.0056 U-0.89.

实施例2Example 2

一种具有过渡金属硼化物涂层的PCB用微钻的制备方法,包括以下步骤:A preparation method for a PCB micro-drill with a transition metal boride coating, comprising the following steps:

(1)前处理:以国内市场上出售的YG8(WC-8%Co)硬质合金微型钻头作为基体,首先将微钻放入丙酮溶液中进行超声清洗10min,之后再放入酒精溶液中进行超声清洗15min,然后用干燥氮气将表面吹干,然后再将刀片放入真空干燥箱中烘干;(1) Pre-treatment: Use the YG8 (WC-8% Co) cemented carbide micro-drill sold in the domestic market as the substrate, first put the micro-drill into the acetone solution for ultrasonic cleaning for 10 minutes, and then put it into the alcohol solution for further cleaning. Ultrasonic cleaning for 15 minutes, then dry the surface with dry nitrogen, and then put the blade in a vacuum drying oven to dry;

(2)装炉:打开溅射镀膜设备的真空室门,将微钻装夹在夹具上;(2) Furnace loading: open the vacuum chamber door of the sputter coating equipment, and clamp the micro drill on the fixture;

(3)抽真空:关闭真空室门,打开水冷机将磁控靶、分子泵、真空腔室的水路接通,打开空压机和镀膜机总电源,然后开启机械泵和前级阀对分子泵抽真空,当分子泵前级真空抽到3Pa以下时,启动分子泵;然后关闭前级阀,并开启粗抽阀对真空室进行粗抽;当真空室内压强达到10Pa以下后,开启前级阀同时对真空腔室和分子泵进行抽低真空,当真空室内压强达到3Pa以下后,关闭粗抽阀,并打开插板阀对真空室进行抽高真空;(3) Vacuuming: close the door of the vacuum chamber, open the water cooler to connect the magnetron target, molecular pump, and the water circuit of the vacuum chamber, turn on the main power supply of the air compressor and coating machine, and then turn on the mechanical pump and the fore-stage valve for molecular Pump vacuum, when the vacuum of the front stage of the molecular pump is below 3Pa, start the molecular pump; then close the front valve, and open the rough valve to rough the vacuum chamber; when the pressure in the vacuum chamber reaches below 10Pa, open the front stage The valve simultaneously pumps the vacuum chamber and the molecular pump to a low vacuum. When the pressure in the vacuum chamber reaches below 3Pa, close the rough pump valve and open the slide valve to pump the vacuum chamber to a high vacuum;

(4)加热:当高真空抽到5.0×10-3Pa以后,开启加热装置对真空室进行加热烘烤使微钻基体的温度达到450℃,并在加热过程中开启转架系统,使样品进行公自传;(4) Heating: After the high vacuum is pumped to 5.0×10 -3 Pa, turn on the heating device to heat and bake the vacuum chamber so that the temperature of the micro-drill substrate reaches 450°C, and turn on the turret system during the heating process to make the sample conduct public autobiography;

(5)离子刻蚀清洗:当真空室真空度达到了3.0×10-3Pa以下时,通入氩气,工作气压为0.8Pa,然后开启离子源进行刻蚀清洗,离子源工作电流为25A,工作电压为80V,离子源刻蚀清洗时间为10min;(5) Ion etching cleaning: When the vacuum degree of the vacuum chamber reaches below 3.0×10 -3 Pa, argon gas is introduced, the working pressure is 0.8Pa, and then the ion source is turned on for etching cleaning. The working current of the ion source is 25A , the working voltage is 80V, and the ion source etching and cleaning time is 10min;

(6)涂层沉积:保持离子源继续工作,同时开启二鹏化钨WB2溅射靶材,进行WB2涂层的沉积,沉积过程中离子源工作电流为20A,工作电压为90V,溅射靶的功率密度为8W/cm2,加载在基体上的负偏压为-15V,沉积温度为450℃,所得涂层厚度为3μm;(6) Coating deposition: Keep the ion source to continue to work, and at the same time turn on the two tungsten oxide WB 2 sputtering targets to deposit the WB 2 coating. During the deposition process, the working current of the ion source is 20A, and the working voltage is 90V. The power density of the shooting target is 8W/cm 2 , the negative bias applied to the substrate is -15V, the deposition temperature is 450°C, and the resulting coating thickness is 3μm;

(7)出炉:涂层沉积结束后,关闭溅射电源以及偏压电源,然后关闭气体质量流量计和气瓶主阀和减压阀;设置降温程序,待温度降到100℃以下后,关闭真空泵组和抽气阀,然后关闭水冷机和设备总电源;打开放气阀,待真空室内压强与外界气压一致时,打开真空室门,然后将加工后的微钻取出,得到具有过渡金属硼化物涂层的PCB用微钻。(7) Out of the furnace: after the coating deposition is completed, turn off the sputtering power supply and the bias power supply, then turn off the gas mass flowmeter, the main valve of the gas cylinder and the pressure reducing valve; set the cooling program, and turn off the vacuum pump after the temperature drops below 100°C group and exhaust valve, then turn off the water cooler and the main power supply of the equipment; open the vent valve, and when the pressure in the vacuum chamber is consistent with the external air pressure, open the door of the vacuum chamber, and then take out the processed micro-drill to obtain a transition metal boride Coated PCB with micro drill.

经测试,该WB2涂层中,WB2的晶粒尺寸为40nm,该涂层的残余热应力为0GPa,得到的具有过渡金属硼化物涂层的PCB用微钻在10gf载荷下的膜基结合硬度为40GPa;断裂韧性为3MPa·m1/2;以GCr15作为摩擦副,在10N的载荷下的摩擦系数为0.5。After testing, in the WB 2 coating, the grain size of WB 2 is 40nm, the residual thermal stress of the coating is 0GPa, and the obtained film base of the micro-drill for PCB with transition metal boride coating under the load of 10gf The combined hardness is 40GPa; the fracture toughness is 3MPa·m 1/2 ; with GCr15 as the friction pair, the friction coefficient under the load of 10N is 0.5.

实施例3Example 3

采用YT15硬质合金微型钻头,采用CrB2作为溅射靶材,在微型钻头上沉积CrB2涂层。离子源工作电流30A,工作电压75V,溅射靶功率8W/cm2,负偏压为255V,沉积温度为550℃,涂层厚度为2.5μm。A YT15 cemented carbide micro - drill was used, and CrB2 was used as a sputtering target to deposit a CrB2 coating on the micro-drill. The working current of the ion source is 30A, the working voltage is 75V, the sputtering target power is 8W/cm 2 , the negative bias voltage is 255V, the deposition temperature is 550°C, and the coating thickness is 2.5μm.

实施例3Example 3

一种具有过渡金属硼化物涂层的PCB用微钻的制备方法,包括以下步骤:A preparation method for a PCB micro-drill with a transition metal boride coating, comprising the following steps:

(1)前处理:以国内市场上出售的YT15硬质合金微型钻头作为基体,首先将微钻放入丙酮溶液中进行超声清洗10min,之后再放入酒精溶液中进行超声清洗15min,然后用干燥氮气将表面吹干,然后再将刀片放入真空干燥箱中烘干;(1) Pretreatment: Using the YT15 cemented carbide micro-drill bit sold in the domestic market as the substrate, first put the micro-drill into acetone solution for ultrasonic cleaning for 10 minutes, then put it into alcohol solution for ultrasonic cleaning for 15 minutes, and then dry it with Nitrogen blows the surface dry, and then puts the blade in a vacuum drying oven to dry;

(2)装炉:打开溅射镀膜设备的真空室门,将微钻装夹在夹具上;(2) Furnace loading: open the vacuum chamber door of the sputter coating equipment, and clamp the micro drill on the fixture;

(3)抽真空:关闭真空室门,打开水冷机将磁控靶、分子泵、真空腔室的水路接通,打开空压机和镀膜机总电源,然后开启机械泵和前级阀对分子泵抽真空,当分子泵前级真空抽到3Pa以下时,启动分子泵;然后关闭前级阀,并开启粗抽阀对真空室进行粗抽;当真空室内压强达到10Pa以下后,开启前级阀同时对真空腔室和分子泵进行抽低真空,当真空室内压强达到3Pa以下后,关闭粗抽阀,并打开插板阀对真空室进行抽高真空;(3) Vacuuming: close the door of the vacuum chamber, open the water cooler to connect the magnetron target, molecular pump, and the water circuit of the vacuum chamber, turn on the main power supply of the air compressor and coating machine, and then turn on the mechanical pump and the fore-stage valve for molecular Pump vacuum, when the vacuum of the front stage of the molecular pump is below 3Pa, start the molecular pump; then close the front valve, and open the rough valve to rough the vacuum chamber; when the pressure in the vacuum chamber reaches below 10Pa, open the front stage The valve simultaneously pumps the vacuum chamber and the molecular pump to a low vacuum. When the pressure in the vacuum chamber reaches below 3Pa, close the rough pump valve and open the slide valve to pump the vacuum chamber to a high vacuum;

(4)加热:当高真空抽到5.0×10-3Pa以后,开启加热装置对真空室进行加热烘烤使微钻基体的温度达到550℃,并在加热过程中开启转架系统,使样品进行公自传;(4) Heating: When the high vacuum reaches 5.0×10 -3 Pa, turn on the heating device to heat and bake the vacuum chamber so that the temperature of the micro-drill substrate reaches 550°C, and turn on the turret system during the heating process to make the sample conduct public autobiography;

(5)离子刻蚀清洗:当真空室真空度达到了3.0×10-3Pa以下时,通入氩气,工作气压为0.8Pa,然后开启离子源进行刻蚀清洗,离子源工作电流为30A,工作电压为75V,离子源刻蚀清洗时间为10min;(5) Ion etching cleaning: When the vacuum degree of the vacuum chamber reaches below 3.0×10 -3 Pa, argon gas is introduced, the working pressure is 0.8Pa, and then the ion source is turned on for etching cleaning. The working current of the ion source is 30A , the working voltage is 75V, and the ion source etching and cleaning time is 10min;

(6)涂层沉积:保持离子源继续工作,同时开启CrB2溅射靶材,进行CrB2涂层的沉积,沉积过程中离子源工作电流为30A,工作电压为75V,溅射靶的功率密度为8W/cm2,加载在基体上的负偏压为-255V,沉积温度为550℃,所得CrB2涂层厚度为2.5μm;(6) Coating deposition: Keep the ion source to continue to work, and at the same time turn on the CrB 2 sputtering target to deposit the CrB 2 coating. During the deposition process, the working current of the ion source is 30A, the working voltage is 75V, and the power of the sputtering target The density is 8W/cm 2 , the negative bias applied to the substrate is -255V, the deposition temperature is 550°C, and the thickness of the obtained CrB 2 coating is 2.5μm;

(7)出炉:涂层沉积结束后,关闭溅射电源以及偏压电源,然后关闭气体质量流量计和气瓶主阀和减压阀;设置降温程序,待温度降到100℃以下后,关闭真空泵组和抽气阀,然后关闭水冷机和设备总电源;打开放气阀,待真空室内压强与外界气压一致时,打开真空室门,然后将加工后的微钻取出,得到具有过渡金属硼化物涂层的PCB用微钻。(7) Out of the furnace: after the coating deposition is completed, turn off the sputtering power supply and the bias power supply, then turn off the gas mass flowmeter, the main valve of the gas cylinder and the pressure reducing valve; set the cooling program, and turn off the vacuum pump after the temperature drops below 100°C group and exhaust valve, then turn off the water cooler and the main power supply of the equipment; open the vent valve, and when the pressure in the vacuum chamber is consistent with the external air pressure, open the door of the vacuum chamber, and then take out the processed micro-drill to obtain a transition metal boride Coated PCB with micro drill.

经测试,该CrB2涂层中,CrB2的晶粒尺寸为30nm,该涂层的残余热应力为0GPa,得到的具有过渡金属硼化物涂层的PCB用微钻在10gf载荷下的膜基结合硬度为30GPa;断裂韧性为2.5MPa·m1/2;以GCr15作为摩擦副,在10N的载荷下的摩擦系数为0.4。After testing, in the CrB 2 coating, the crystal grain size of CrB 2 is 30nm, and the residual thermal stress of the coating is 0GPa, and the obtained film base of the micro-drill for PCB with transition metal boride coating under 10gf load The combined hardness is 30GPa; the fracture toughness is 2.5MPa·m 1/2 ; with GCr15 as the friction pair, the friction coefficient under the load of 10N is 0.4.

以上实施例说明,通过调控沉积温度和沉积负偏压来控制涂层的热应力和生长应力,通过参数优化可使热应力和生长应力相互抵消,制备出低应力的过渡金属硼化物涂层。此外,溅射沉积过程中引入等离子体辅助,提高离化率和沉积粒子能量,从而提高涂层的膜基结合强度。The above examples illustrate that the thermal stress and growth stress of the coating can be controlled by adjusting the deposition temperature and deposition negative bias, and the thermal stress and growth stress can be offset by parameter optimization to prepare a transition metal boride coating with low stress. In addition, plasma assistance was introduced in the sputter deposition process to increase the ionization rate and the energy of deposited particles, thereby improving the film-substrate bonding strength of the coating.

需要说明的是,根据上述说明书的揭示和和阐述,本发明所属领域的技术人员还可以对上述实施方式进行变更和修改。因此,本发明并不局限于上面揭示和描述的具体实施方式,对本发明的一些等同修改和变更也应当在本发明的权利要求的保护范围之内。此外,尽管本说明书中使用了一些特定的术语,但这些术语只是为了方便说明,并不对本发明构成任何限制。It should be noted that, according to the disclosure and explanation of the above description, those skilled in the art to which the present invention belongs may also make changes and modifications to the above implementation manners. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some equivalent modifications and changes to the present invention should also fall within the protection scope of the claims of the present invention. In addition, although some specific terms are used in this specification, these terms are only for convenience of description and do not constitute any limitation to the present invention.

Claims (10)

1. a kind of PCB with transition metal boride coating preparation methods of micro- brill, it is characterised in that including following step Suddenly:
(1) PCB is taken with micro- brill matrix, and cleaning treatment is carried out to it;
Micro- brill matrix after by the cleaning is placed in the vacuum chamber of sputtering coating equipment, and the air pressure of vacuum chamber is evacuated into 5 × 10- 3After below Pa, heating is carried out to vacuum chamber makes substrate temperature reach 350~600 DEG C;
Ion gun is opened, argon gas is passed through, 10~30min of icon bombardment cleaning is carried out to matrix;
(2) ion gun is kept to work on, using transition metal boride as sputtering target material, to sputter mode described Matrix surface deposition transition metal boride coating after icon bombardment cleaning, wherein, loaded on matrix in deposition process and born Bias, the back bias voltage is 0~-300V, and depositing temperature is 350~600 DEG C;The power density of the sputtering target is 2~20W/ cm2;The operating current of the ion gun is 20~30A, and operating voltage is 50~100V;By adjusting the depositing temperature and bearing Bias makes the absolute value of the residual stress of the transition metal boride coating be less than 0.3GPa;
(3) after deposition terminates, cooling sampling obtains the micro- brills of the PCB with transition metal boride coating.
2. preparation method as claimed in claim 1, it is characterised in that during the icon bombardment cleaning, the work of the ion gun Make electric current for 20~30A, operating voltage is 50~100V.
3. preparation method as claimed in claim 1, it is characterised in that the transition metal boride is selected from titanium diboride, two One or more in zirconium boride, vanadium diboride, niobium dioxide, tantalum diboride, two chromium borides, molybdenum diboride, wolfram diboride.
4. preparation method as claimed in claim 1, it is characterised in that when the transition metal boride coating is titanium diboride When, the depositing temperature is 350~600 DEG C, and the back bias voltage is -10~-100V.
5. preparation method as claimed in claim 4, it is characterised in that when the depositing temperature is 550 DEG C, the back bias voltage It is -50~-100V, the residual stress of the transition metal boride coating is 0.12~-0.16GPa;
When the depositing temperature be 500 DEG C when, the back bias voltage be -30~-70V, the transition metal boride coating it is residual Residue stress is 0.112~-0.112GPa;
When the depositing temperature be 450 DEG C when, the back bias voltage be -10~-40V, the transition metal boride coating it is residual Residue stress is 0.094~-0.074GPa.
6. preparation method as claimed in claim 3, it is characterised in that the transition metal boride coating is wolfram diboride, When the depositing temperature is 450 DEG C, the back bias voltage is -15V, and the residual stress of the transition metal boride coating is approached 0GPa。
7. preparation method as claimed in claim 3, it is characterised in that the transition metal boride coating is two chromium borides, When the depositing temperature is 550 DEG C, the back bias voltage is -255V, and the residual stress of the transition metal boride coating connects Nearly 0GPa.
8. a kind of micro- brills of the PCB with transition metal boride coating, it is characterised in that including micro- brill matrix, and set In micro- transition metal boride coating bored on matrix, the absolute value of the residual stress of the transition metal boride coating Less than 0.3GPa.
9. micro- brills of PCB as claimed in claim 1, it is characterised in that the thickness of the transition metal boride coating is 0.2 ~4 μm.
10. micro- brills of PCB as claimed in claim 1, it is characterised in that using GCr15 as friction pair, the micro- brills of the PCB On coefficient of friction of the transition metal boride coating under 10N load be 0.2-0.5;The transition metal boride coating Fracture toughness is 2-4MPam1/2
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CN109930126A (en) * 2019-04-18 2019-06-25 包头中科泰磁涂层科技有限责任公司 A kind of physical gas-phase deposite method of brass nut surfacecti proteon
CN110484881A (en) * 2019-08-15 2019-11-22 广东工业大学 A kind of densification titanium diboride coating and its preparation method and application
CN110484881B (en) * 2019-08-15 2021-09-07 广东工业大学 A kind of dense titanium diboride coating and its preparation method and application
CN110565063A (en) * 2019-10-28 2019-12-13 吉林大学 Zirconium tantalum boron coating and preparation method and application thereof
CN111962022A (en) * 2020-09-07 2020-11-20 西安石油大学 WB (wideband) module2/WBC multilayer hard coating and preparation method and application thereof
CN114672779A (en) * 2022-04-13 2022-06-28 上海大学 A kind of preparation method of TiB2/Ti composite coating
CN115612996A (en) * 2022-09-21 2023-01-17 厦门金鹭特种合金有限公司 Cutter and TiB x Coating, preparation method and application thereof

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