CN114672779A - A kind of preparation method of TiB2/Ti composite coating - Google Patents
A kind of preparation method of TiB2/Ti composite coating Download PDFInfo
- Publication number
- CN114672779A CN114672779A CN202210386192.9A CN202210386192A CN114672779A CN 114672779 A CN114672779 A CN 114672779A CN 202210386192 A CN202210386192 A CN 202210386192A CN 114672779 A CN114672779 A CN 114672779A
- Authority
- CN
- China
- Prior art keywords
- tib
- preparation
- composite coating
- base material
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 96
- 239000011248 coating agent Substances 0.000 title claims abstract description 75
- 239000002131 composite material Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229910033181 TiB2 Inorganic materials 0.000 title claims abstract description 10
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims abstract description 27
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 19
- 230000007704 transition Effects 0.000 claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 239000013077 target material Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 19
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000004048 modification Effects 0.000 abstract description 4
- 238000012986 modification Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 description 31
- 238000002441 X-ray diffraction Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 102000008071 Mismatch Repair Endonuclease PMS2 Human genes 0.000 description 3
- 108010074346 Mismatch Repair Endonuclease PMS2 Proteins 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002114 nanocomposite Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910016955 Fe1-xMnx Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013211 curve analysis Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0047—Drilling of holes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
技术领域technical field
本发明涉及材料表面改性和薄膜材料制备技术领域,特别是涉及一种TiB2/Ti复合涂层的制备方法。The invention relates to the technical field of material surface modification and thin film material preparation, in particular to a preparation method of a TiB 2 /Ti composite coating.
背景技术Background technique
目前我国的集成电路行业处于高速发展时期,对相关制造产业的要求不断提高,其中PCB印刷电路板的加工是至关重要的一环。微型钻头是PCB电路板加工的主要零件,提高微型钻头的使用寿命和质量是非常重要的。二硼化钛(TiB2)因具有良好的导电性、高硬度和耐磨性等优异的理化性能,是一种非常理想的硬质合金微型钻头的保护材料。二硼化钛是硼和钛元素形成的最稳定化合物,具有耐腐蚀、抗氧化、导电性好等优良特性。而且TiB2的熔点高,硬度仅次于金刚石、立方氮化硼等超硬材料。作为一种硬质耐磨薄膜,在机械加工、设备高温成型等需要耐磨的场所有着广泛的应用前景,在抗腐蚀的领域也具有一定的应用潜力。类似于石墨的B原子层状结构和Ti外层电子决定了TiB2具有良好的导电性和金属光泽,而B原子面与Ti原子面之间的Ti-B键使得TiB2材料具有硬度高和脆性大的特点。虽然对TiB2薄膜的结构和性能的研究已经进行了几十年,但是由于很难生产出适合工业应用的具有良好机械性能的高质量薄膜,目前为止商业化的研究还很少。因此,在不显著牺牲TiB2薄膜硬度的前提下,提高薄膜的韧性和刀具结合力是非常有必要的工作。At present, my country's integrated circuit industry is in a period of rapid development, and the requirements for related manufacturing industries are constantly increasing. Among them, the processing of PCB printed circuit boards is a crucial part. Micro drill is the main part of PCB circuit board processing, it is very important to improve the service life and quality of micro drill. Titanium diboride (TiB 2 ) is an ideal protective material for cemented carbide micro-drills due to its excellent physical and chemical properties such as good electrical conductivity, high hardness and wear resistance. Titanium diboride is the most stable compound formed by boron and titanium elements, and has excellent properties such as corrosion resistance, oxidation resistance, and good electrical conductivity. Moreover, TiB 2 has a high melting point, and its hardness is second only to superhard materials such as diamond and cubic boron nitride. As a hard wear-resistant film, it has broad application prospects in places where wear-resistant is required such as machining and high-temperature molding of equipment, and it also has certain application potential in the field of corrosion resistance. The layered structure of B atoms similar to graphite and the electrons in the outer layer of Ti determine that TiB has good electrical conductivity and metallic luster, and the Ti - B bond between the B atomic plane and the Ti atomic plane makes the TiB2 material have high hardness and The characteristic of brittleness. Although studies on the structure and properties of TiB2 thin films have been carried out for decades, few commercial studies have been carried out so far due to the difficulty of producing high-quality films with good mechanical properties suitable for industrial applications. Therefore, it is very necessary to improve the toughness and tool bonding force of the films without significantly sacrificing the hardness of TiB films.
磁控溅射是低温低损伤高速沉积溅射技术,具有均匀、致密、针孔小、纯度高、附着力强、应用靶材更广等突出优点,是非常具有商业价值和应用前景的一种薄膜沉积技术。其原理是在阴极靶材表面上方形成一个正交电磁场(即利用磁管控原理,使磁场与电场正交,磁场方向与阴极表面平行)。当溅射产生的二次电子在阴极位降区被加速为高能电子后,并不能直接飞向阳极,而是在正交磁场作用下来回振荡,近似于做摆线运动,并不断与气体分子发生碰撞,把能量传递给气体分子,使之电离,本身变为低能离子,最终沿磁力线漂移到阴极附近的辅助阳极基底。在众多研究中,一种常见的方法是通过在陶瓷薄膜中引入改性金属制备出各种陶瓷/金属纳米复合薄膜。例如,Wang等人(Toughening magnetronsputtered TiB2coatings by Ni addition)在TiB2硬质薄膜中加入金属Ni可以实现增韧的效果。还有Ding等人(Effect of Cu addition on the microstructure and propertiesof TiB2 films deposited by a hybrid system combining high power impulsemagnetron sputtering and pulsed dc magnetron sputtering)合成了TiB2-Cu薄膜,通过掺杂非晶相的Cu原子TiB2组织中形成固溶强化和纳米复合结构,提高了薄膜的韧性。但是,采取共溅射引入其他金属的方法,不仅使得工艺复杂化,而且对设备的要求也提高了。最重要的是过量的软质增韧金属的加入,会使得TiB2薄膜硬度降低。还有一种方法是制备出交替结构的改良薄膜,例如,He等人(Improving the mechanical and tribologicalproperties of TiB2/a-C nanomultilayers by structural optimization)制备的TiB2/a-C纳米多层膜和Wang等人(Structure and mechanical properties of Fe1-xMnx/TiB2multilayer coatings:Possible role of transformation toughening)合成的TiB2/Fe1-xMnx系列多层结构薄膜,通过调整结构周期数和改变薄膜成分比例可以有效提高薄膜的韧性。但是,交替结构的多层膜在提高TiB2薄膜韧性的同时,不可避免的牺牲其硬度和耐磨等优良性能。在上述的研究中,往往选择通过引入其他物质达到改性的目的。可是其他物质的介入往往会影响TiB2薄膜的(001)晶向的择优取向,难免降低固有硬度等突出的力学性能。因此,迫切需要在不改变TiB2原有结构体系的目的下,制备出具有高耐磨性、高硬度和强结合力的TiB2涂层。Magnetron sputtering is a low-temperature, low-damage, high-speed deposition sputtering technology. It has outstanding advantages such as uniformity, compactness, small pinholes, high purity, strong adhesion, and wider application of targets. It is a kind of very commercial value and application prospect. Thin film deposition technology. The principle is to form an orthogonal electromagnetic field above the surface of the cathode target (that is, using the principle of magneto-control, the magnetic field is orthogonal to the electric field, and the direction of the magnetic field is parallel to the cathode surface). When the secondary electrons generated by sputtering are accelerated into high-energy electrons in the cathode drop zone, they cannot fly directly to the anode, but oscillate back and forth under the action of the orthogonal magnetic field, similar to cycloid motion, and continuously interact with gas molecules. The collision occurs, transferring energy to the gas molecules, ionizing them, becoming low-energy ions themselves, and finally drifting along the magnetic field lines to the auxiliary anode substrate near the cathode. In numerous studies, a common method is to prepare various ceramic/metal nanocomposite films by introducing modified metals into ceramic films. For example, Wang et al. (Toughening magnetronsputtered TiB 2 coatings by Ni addition) added metallic Ni to the TiB 2 hard film to achieve toughening effect. Also Ding et al. (Effect of Cu addition on the microstructure and properties of TiB 2 films deposited by a hybrid system combining high power impulsemagnetron sputtering and pulsed dc magnetron sputtering) synthesized TiB 2 -Cu films by doping amorphous Cu films The solid solution strengthening and nanocomposite structure are formed in the atomic TiB 2 structure, which improves the toughness of the film. However, the method of introducing other metals by co-sputtering not only complicates the process, but also increases the requirements for equipment. The most important thing is that the addition of excess soft toughening metal will reduce the hardness of TiB 2 film. Another approach is to prepare modified films with alternating structures, for example, TiB 2 /aC nanomultilayers prepared by He et al. (Improving the mechanical and tribological properties of TiB 2 /aC nanomultilayers by structural optimization) and Wang et al. (Structure and mechanical properties of Fe1-xMnx/TiB 2 multilayer coatings: Possible role of transformation toughening), the TiB 2 /Fe 1-x Mn x series multilayer structure films can be effectively improved by adjusting the number of structural periods and changing the composition ratio of the film. toughness. However, the multilayer film with alternating structure can inevitably sacrifice its excellent properties such as hardness and wear resistance while improving the toughness of TiB 2 film. In the above-mentioned studies, it is often chosen to achieve the purpose of modification by introducing other substances. However, the intervention of other substances often affects the preferred orientation of the (001) crystal orientation of TiB 2 films, which inevitably reduces the outstanding mechanical properties such as inherent hardness. Therefore, it is urgent to prepare TiB 2 coatings with high wear resistance, high hardness and strong binding force without changing the original structural system of TiB 2 .
发明内容SUMMARY OF THE INVENTION
本发明的目的是提供一种TiB2/Ti复合涂层的制备方法,以解决现有技术中存在的问题。The purpose of the present invention is to provide a preparation method of TiB 2 /Ti composite coating to solve the problems existing in the prior art.
为实现上述目的,本发明提供了如下方案:For achieving the above object, the present invention provides the following scheme:
本发明的技术方案之一:一种TiB2/Ti复合涂层的制备方法,包括以下步骤:One of the technical solutions of the present invention: a preparation method of TiB 2 /Ti composite coating, comprising the following steps:
(1)基底材料的预处理:将基底材料抛光后依次用丙酮、无水乙醇清洗得到预处理基底材料;(1) Pretreatment of base material: After polishing the base material, wash it with acetone and absolute ethanol in turn to obtain a pretreated base material;
(2)预溅射:将基底材料和靶材进行预溅射处理;所述靶材为热压烧结TiB2陶瓷靶,纯度为99.9%;(2) Pre-sputtering: the base material and the target are pre-sputtered; the target is a hot-pressed sintered TiB 2 ceramic target with a purity of 99.9%;
(3)Ti过渡层的沉积:采用直流磁控溅射的方法在基底材料上沉积Ti过渡层,得到具有Ti过渡层的基底材料;(3) Deposition of Ti transition layer: the method of DC magnetron sputtering is used to deposit a Ti transition layer on the base material to obtain a base material with a Ti transition layer;
(4)TiB2硬质保护层的沉积:采用直流脉冲磁控溅射的方法,在所述具有Ti过渡层的基底材料上沉积靶材,得到TiB2硬质保护层,即为所述TiB2/Ti复合涂层。(4) Deposition of TiB 2 hard protective layer: adopt the method of DC pulse magnetron sputtering to deposit a target material on the base material with Ti transition layer to obtain a TiB 2 hard protective layer, which is the TiB 2 /Ti composite coating.
进一步地,所述基底材料选自硬质合金、硅、金属中的任意一种。Further, the base material is selected from any one of cemented carbide, silicon and metal.
更近一步地,所述金属为金属铜或金属钛。Further, the metal is copper metal or titanium metal.
进一步地,所述抛光具体包括:依次用200目、600目、1000目、2000目的砂纸打磨基底材料。Further, the polishing specifically includes: grinding the base material with 200-mesh, 600-mesh, 1,000-mesh, and 2,000-mesh sandpaper in sequence.
进一步地,所述清洗为超声清洗,清洗时间为30min。Further, the cleaning is ultrasonic cleaning, and the cleaning time is 30min.
基底材料表面质量直接影响沉积后的涂层质量,对基底材料进行预处理可以减小基底材料表面质量对涂层性能的影响。The surface quality of the base material directly affects the quality of the coating after deposition, and pretreatment of the base material can reduce the influence of the surface quality of the base material on the coating performance.
进一步地,所述预溅射处理的功率为300W,基体偏压为-300V,工作时长为30min。Further, the power of the pre-sputtering treatment is 300W, the bias voltage of the substrate is -300V, and the working time is 30min.
进一步地,在所述预溅射处理前,还包括将磁控溅射设备的样品基台加热至350℃。Further, before the pre-sputtering treatment, it also includes heating the sample base of the magnetron sputtering equipment to 350°C.
预溅射处理可以清理靶材表面和基体,去除基体表面残余的气体、颗粒等污染物,增强涂层的结合力。The pre-sputtering treatment can clean the surface of the target and the substrate, remove the residual gas, particles and other pollutants on the surface of the substrate, and enhance the bonding force of the coating.
进一步地,所述直流磁控溅射的功率为300W,基体偏压为-100V,工作时长为30min。Further, the power of the DC magnetron sputtering is 300W, the bias voltage of the substrate is -100V, and the working time is 30min.
进一步地,所述直流脉冲磁控溅射的腔体沉积温度为350℃,工作气压为0.8Pa,基体偏压为0~200V。Further, the deposition temperature of the DC pulse magnetron sputtering chamber is 350° C., the working pressure is 0.8 Pa, and the substrate bias voltage is 0-200V.
本发明的技术方案之二:一种上述的制备方法制备得到的TiB2/Ti复合涂层。The second technical solution of the present invention: a TiB 2 /Ti composite coating prepared by the above-mentioned preparation method.
本发明的技术方案之三:一种上述的TiB2/Ti复合涂层在制备硬质合金微型钻头中的应用。The third technical solution of the present invention is the application of the above-mentioned TiB 2 /Ti composite coating in the preparation of cemented carbide micro-drills.
本发明公开了以下技术效果:The present invention discloses the following technical effects:
(1)采用本发明的制备方法可以在硬质合金微型钻头表面制备TiB2/Ti复合涂层(保护层),并且本发明的制备方法效率较高,普适性强,有很好的工业应用前景,为TiB2硬质涂层的广泛应用打下了技术基础。(1) Using the preparation method of the present invention, the TiB 2 /Ti composite coating (protective layer) can be prepared on the surface of the cemented carbide micro-drill, and the preparation method of the present invention has high efficiency, strong universality, and good industrial The application prospect lays a technical foundation for the wide application of TiB 2 hard coating.
(2)本发明中通过调节基体偏压改变TiB2涂层生长的结构与性能。基于涂层的生长始终遵循总自由能最低的原则,通过提高沉积过程的基体偏压,可以使离化后的粒子在电场作用下加速轰击表面,促进了粒子在涂层表面的扩散。随着调节基体偏压的增大,涂层逐渐转变为(001)晶面择优取向生长,涂层的显微结构、硬度、韧性和耐磨性随之改变。(2) In the present invention, the structure and properties of TiB 2 coating growth are changed by adjusting the substrate bias. The growth based on the coating always follows the principle of the lowest total free energy. By increasing the substrate bias during the deposition process, the ionized particles can be accelerated to bombard the surface under the action of the electric field, which promotes the diffusion of the particles on the coating surface. With the increase of the adjusted substrate bias, the coating gradually transformed into (001) crystal plane preferentially oriented growth, and the microstructure, hardness, toughness and wear resistance of the coating changed accordingly.
(3)本发明实现了在硬质合金表面制备高硬度和耐磨性的保护涂层,制备方法简便,易于大规模生产。(3) The present invention realizes the preparation of a protective coating with high hardness and wear resistance on the surface of the cemented carbide, and the preparation method is simple and convenient for large-scale production.
(4)本发明可以通过对沉积时间的调整从而控制TiB2涂层厚度,用于应用于不同场所,不同应用要求。(4) The present invention can control the thickness of the TiB 2 coating by adjusting the deposition time, and can be used in different places and different application requirements.
(5)本发明制备的涂层,表明平整、结构致密,而且真空条件下沉积无杂质问题,相比于其他技术,涂层致密度程度更高,孔隙率更低。(5) The coating prepared by the present invention shows that the coating is flat and dense in structure, and there is no impurity problem deposited under vacuum conditions. Compared with other technologies, the coating has a higher degree of density and a lower porosity.
(6)本发明制备的TiB2涂层不仅具备极高的硬度和耐磨性能,同时兼具极佳的耐腐蚀性能和导电性能。(6) The TiB 2 coating prepared by the present invention not only has extremely high hardness and wear resistance, but also has excellent corrosion resistance and electrical conductivity.
(7)本发明制备的TiB2/Ti复合涂层,在保持涂层具有高硬度、高耐磨性的基础上,进一步提高了涂层与基底之间的结合力。(7) The TiB 2 /Ti composite coating prepared by the present invention further improves the bonding force between the coating and the substrate on the basis of maintaining the coating with high hardness and high wear resistance.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings required in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some of the present invention. In the embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.
图1为本发明采用的控溅射设备示意图;Fig. 1 is the schematic diagram of the sputtering control equipment adopted in the present invention;
图2为本发明实施例1~5和实施例6制备的涂层的结构示意图;2 is a schematic structural diagram of the coatings prepared in Examples 1 to 5 and Example 6 of the present invention;
图3本发明实施例1~5制备得到的TiB2涂层的XRD衍射图,其中PMS-1为实施例1,PMS-2实施例2,PMS-3实施例3,PMS-4实施例4,PMS-5实施例5;Fig. 3 XRD diffractograms of TiB coatings prepared in Examples 1 to 5 of the present invention, wherein PMS-1 is Example 1, PMS-2 Example 2, PMS-3 Example 3, and PMS-4 Example 4 , PMS-5
图4为本发明实施例1~5制备得到的TiB2涂层的扫描电子显微镜照片,其中(a)为实施例1,(b)为实施例2,(c)为实施例3,(d)为实施例4,(e)为实施例5;4 is a scanning electron microscope photograph of the TiB coating prepared in Examples 1 to 5 of the present invention, wherein (a) is Example 1, (b) is Example 2, (c) is Example 3, and (d) ) is
图5为本发明实施例3制备得到的TiB2涂层表面元素扫描分布图(EDS);Fig. 5 is the TiB coating surface element scanning distribution diagram (EDS) prepared in Example 3 of the present invention;
图6为本发明实施例1~5制备得到的TiB2涂层的力学测试结果图,其中(a)为硬度,(b)为弹性模量,(c)为实例5的加载-卸载曲线分析,(d)为实例1~5的加载-卸载曲线;6 is a graph showing the mechanical test results of the TiB coatings prepared in Examples 1 to 5 of the present invention, wherein (a) is the hardness, (b) is the elastic modulus, and (c) is the loading-unloading curve analysis of Example 5 , (d) is the loading-unloading curve of examples 1-5;
图7为本发明实施例1~5制备得到的TiB2涂层的H/E和H3/E2比值统计图;Fig. 7 is the H/E and H 3 /E 2 ratio statistics diagram of the TiB 2 coatings prepared in Examples 1-5 of the present invention;
图8为本发明实施例1~5制备得到的TiB2涂层的摩擦学测试结果图,其中(a)为摩擦系数,(b)为磨损率;8 is a graph showing the results of tribological testing of TiB coatings prepared in Examples 1 to 5 of the present invention, wherein (a) is the coefficient of friction, and (b) is the wear rate;
图9为本发明实施例3和实施例6制备的涂层的划痕测试图,其中(a)为实例6,(b)为实例3;9 is a scratch test chart of the coatings prepared in Example 3 and Example 6 of the present invention, wherein (a) is Example 6, and (b) is Example 3;
图10为本发明实例3和实例6制备的涂层的力学测试结果图,其中(a)为硬度,(b)为弹性模量,(c)为加载-卸载曲线,(d)为H/E和H3/E2比值;Figure 10 is a graph showing the mechanical test results of the coatings prepared in Examples 3 and 6 of the present invention, wherein (a) is hardness, (b) is elastic modulus, (c) is loading-unloading curve, and (d) is H/ E and H 3 /E 2 ratio;
图11为本发明实施例6制备得到的TiB2涂层的微观图;11 is a microscopic view of the TiB coating prepared in Example 6 of the present invention;
图12为本发明实施例3使用的材料及获得的具有涂层的材料的照片,其中(a)为硬质合金块,(b)为具有TiB2合涂层的硬质合金块正面,(c)为具有TiB2涂层的硬质合金块背面;Figure 12 is a photo of the material used in Example 3 of the present invention and the obtained material with coating, wherein (a) is a cemented carbide block, (b ) is the front side of the cemented carbide block with TiB coating, ( c) is the back side of the cemented carbide block with TiB coating ;
图13为本发明实施例1~5制备得到的涂层的电极化曲线图。FIG. 13 is an electric polarization curve diagram of the coatings prepared in Examples 1 to 5 of the present invention.
具体实施方式Detailed ways
现详细说明本发明的多种示例性实施方式,该详细说明不应认为是对本发明的限制,而应理解为是对本发明的某些方面、特性和实施方案的更详细的描述。Various exemplary embodiments of the present invention will now be described in detail, which detailed description should not be construed as a limitation of the invention, but rather as a more detailed description of certain aspects, features, and embodiments of the invention.
应理解本发明中所述的术语仅仅是为描述特别的实施方式,并非用于限制本发明。另外,对于本发明中的数值范围,应理解为还具体公开了该范围的上限和下限之间的每个中间值。在任何陈述值或陈述范围内的中间值以及任何其他陈述值或在所述范围内的中间值之间的每个较小的范围也包括在本发明内。这些较小范围的上限和下限可独立地包括或排除在范围内。It should be understood that the terms described in the present invention are only used to describe particular embodiments, and are not used to limit the present invention. Additionally, for numerical ranges in the present disclosure, it should be understood that each intervening value between the upper and lower limits of the range is also specifically disclosed. Every smaller range between any stated value or intervening value in a stated range and any other stated value or intervening value in that stated range is also encompassed within the invention. The upper and lower limits of these smaller ranges may independently be included or excluded in the range.
除非另有说明,否则本文使用的所有技术和科学术语具有本发明所述领域的常规技术人员通常理解的相同含义。虽然本发明仅描述了优选的方法和材料,但是在本发明的实施或测试中也可以使用与本文所述相似或等同的任何方法和材料。本说明书中提到的所有文献通过引用并入,用以公开和描述与所述文献相关的方法和材料。在与任何并入的文献冲突时,以本说明书的内容为准。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention relates. Although only the preferred methods and materials are described herein, any methods and materials similar or equivalent to those described herein can also be used in the practice or testing of the present invention. All documents mentioned in this specification are incorporated by reference for the purpose of disclosing and describing the methods and materials in connection with which the documents are referred. In the event of conflict with any incorporated document, the content of this specification controls.
在不背离本发明的范围或精神的情况下,可对本发明说明书的具体实施方式做多种改进和变化,这对本领域技术人员而言是显而易见的。由本发明的说明书得到的其他实施方式对技术人员而言是显而易见的。本申请说明书和实施例仅是示例性的。It will be apparent to those skilled in the art that various modifications and variations can be made in the specific embodiments of the present invention without departing from the scope or spirit of the invention. Other embodiments will be apparent to those skilled in the art from the description of the present invention. The description and examples of the present application are only exemplary.
关于本文中所使用的“包含”、“包括”、“具有”、“含有”等等,均为开放性的用语,即意指包含但不限于。As used herein, "comprising," "including," "having," "containing," and the like, are open-ended terms, meaning including but not limited to.
实施例1Example 1
一种TiB2涂层的制备方法: A preparation method of TiB coating:
(1)基底材料的预处理:选择尺寸为20mm×20mm×2mm的WC硬质合金块作为基底材料,然后依次用200目、600、1000目、2000目的砂纸打磨,打磨完成后将基底材料放入丙酮中超声清洗30min,然后再放入无水乙醇中超声清洗30min后氮气吹干,立即装夹放入磁控溅射设备的腔体样品基台处。(1) Pretreatment of the base material: Select a WC cemented carbide block with a size of 20mm×20mm×2mm as the base material, and then use 200-mesh, 600-mesh, 1000-mesh, and 2000-mesh sandpaper in sequence. After grinding, place the base material on the It was ultrasonically cleaned in acetone for 30 min, then placed in anhydrous ethanol for ultrasonic cleaning for 30 min, dried with nitrogen, and then clamped and placed at the cavity sample base of the magnetron sputtering equipment.
(2)基台加热:关闭真空腔室,用抽真空系统抽气压至5×10-3Pa,然后打开加热电阻丝,加热样品基台3h至温度达到350℃。(2) Base heating: Close the vacuum chamber, use the vacuum system to evacuate the pressure to 5×10 -3 Pa, then turn on the heating resistance wire, and heat the sample base for 3 hours until the temperature reaches 350°C.
(3)预溅射:向真空腔室中通入氩气,保持0.8Pa的工作气压,关闭挡板,采用直流磁控溅射的方法,在功率为300W,基体偏压为-300V的条件下,对基底材料和靶材(靶材为热压烧结TiB2陶瓷靶,纯度为99.9%)进行30min的预溅射处理。(3) Pre-sputtering: Pour argon gas into the vacuum chamber, keep the working pressure of 0.8Pa, close the baffle, adopt the method of DC magnetron sputtering, under the condition of power of 300W and substrate bias of -300V Next, the base material and the target material (the target material is a hot-pressed sintered TiB 2 ceramic target with a purity of 99.9%) are subjected to a pre-sputtering treatment for 30 minutes.
(4)TiB2硬质保护层的沉积:打开挡板,将靶材和基底材料的距离(靶基距)设定为10cm,然后采用直流脉冲磁控溅射的方法,在具有Ti过渡层的基底材料上沉积靶材得到TiB2硬质保护层,关闭溅射电源,然后关闭加热装置,等待温度降温至100℃,依次关闭分子泵、机械泵、冷却水,静置6h以上后,打开真空腔室取出样品,得到具有TiB2/Ti复合涂层的材料。(4) Deposition of TiB 2 hard protective layer: open the baffle, set the distance between the target and the base material (target-base distance) to 10cm, and then adopt the method of DC pulse magnetron sputtering, with a Ti transition layer Deposition the target material on the base material to obtain the TiB 2 hard protective layer, turn off the sputtering power supply, then turn off the heating device, wait for the temperature to drop to 100 ° C, turn off the molecular pump, mechanical pump, cooling water in turn, after standing for more than 6h, turn on The samples were taken out of the vacuum chamber, and the material with the TiB 2 /Ti composite coating was obtained.
直流脉冲磁控溅射的腔体沉积温度为350℃,工作气压为0.8Pa,基体偏压为0V,电源功率为300W,占空比为50%,通入氩气,样品基台的旋转速度为30rmp,工作时长为3h,沉积速率为20nm/min。The deposition temperature of the DC pulse magnetron sputtering chamber is 350°C, the working pressure is 0.8Pa, the substrate bias is 0V, the power supply is 300W, the duty cycle is 50%, and argon gas is introduced, and the rotation speed of the sample base is is 30rmp, the working time is 3h, and the deposition rate is 20nm/min.
其X射线衍射(XRD)如图3所示(PMS-1),XRD衍射花样上没有晶体相对应的尖锐的布拉格峰。如图4为扫描电子显微镜图片,此时的涂层截面生长无序,表面形貌松散。其力学性能如图6所示,此时硬度仅为23.5GPa。H/E和H3/E2比值仅为0.11和0.27GPa。并且图8所示磨损率高达5.94×10-10m3/N·m。Its X-ray diffraction (XRD) is shown in Figure 3 (PMS-1), and there is no sharp Bragg peak corresponding to the crystal on the XRD diffraction pattern. Fig. 4 is a scanning electron microscope picture. At this time, the cross-section of the coating grows disorderly and the surface morphology is loose. Its mechanical properties are shown in Figure 6, and the hardness is only 23.5GPa at this time. The H/E and H 3 /E 2 ratios are only 0.11 and 0.27 GPa. And the wear rate shown in Fig. 8 is as high as 5.94×10 -10 m 3 /N·m.
制备得TiB2涂层中TiB2层的厚度在3μm左右。The thickness of the TiB 2 layer in the prepared TiB 2 coating is about 3 μm.
实施例2Example 2
同实施例1,区别在于,步骤(4)中的基体偏压为50V。Same as
其X射线衍射(XRD)如图3所示(PMS-2),XRD衍射花样上没有晶体相对应的尖锐的布拉格峰。如图4为扫描电子显微镜图片,此时的涂层截面生长无序,表面形貌松散。其力学性能如图6所示,此时硬度为40.8GPa。H/E和H3/E2比值为0.15和0.99GPa。并且图8所示磨损率为1.55×10-10m3/N·m。Its X-ray diffraction (XRD) is shown in Figure 3 (PMS-2), and there is no sharp Bragg peak corresponding to the crystal on the XRD diffraction pattern. Fig. 4 is a scanning electron microscope picture. At this time, the cross-section of the coating grows disorderly and the surface morphology is loose. Its mechanical properties are shown in Figure 6, and the hardness is 40.8GPa at this time. The H/E and H 3 /E 2 ratios were 0.15 and 0.99 GPa. And the wear rate shown in FIG. 8 was 1.55×10 −10 m 3 /N·m.
制备得TiB2涂层中TiB2层的厚度在3μm左右。The thickness of the TiB 2 layer in the prepared TiB 2 coating is about 3 μm.
实施例3Example 3
同实施例1,区别在于,步骤(4)中的基体偏压为100V。Same as
其X射线衍射(XRD)如图3所示(PMS-3),XRD衍射花样上没有晶体相对应的尖锐的布拉格峰。如图4为扫描电子显微镜图片,此时的涂层截面生长无序,表面形貌松散。其力学性能如图6所示,此时硬度为43.3GPa。H/E和H3/E2比值为0.17和1.28GPa。并且图8所示磨损率为1.53×10-11m3/N·m,划痕测试结合力结果显示,临界载荷LC1:8.631N、LC2:12.577N、LC3:18.667N。Its X-ray diffraction (XRD) is shown in Figure 3 (PMS-3), and there is no sharp Bragg peak corresponding to the crystal on the XRD diffraction pattern. Fig. 4 is a scanning electron microscope picture. At this time, the cross-section of the coating grows disorderly and the surface morphology is loose. Its mechanical properties are shown in Figure 6, and the hardness is 43.3GPa at this time. The H/E and H 3 /E 2 ratios were 0.17 and 1.28 GPa. And the wear rate shown in Figure 8 is 1.53×10 -11 m 3 /N·m, and the result of the scratch test bonding force shows that the critical loads are LC1: 8.631N, LC2: 12.577N, and LC3: 18.667N.
制备得TiB2涂层中TiB2层的厚度在3μm左右。The thickness of the TiB 2 layer in the prepared TiB 2 coating is about 3 μm.
实施例4Example 4
同实施例3,区别在于,步骤(4)中的基体偏压为150V。Same as
其X射线衍射(XRD)如图3所示(PMS-4),XRD衍射花样上没有晶体相对应的尖锐的布拉格峰。如图4为扫描电子显微镜图片,此时的涂层截面生长无序,表面形貌松散。其力学性能如图6所示,此时硬度为46.0GPa。H/E和H3/E2比值为0.16和1.32GPa。并且图8所示磨损率为2.57×10-11m3/N·m。Its X-ray diffraction (XRD) is shown in Figure 3 (PMS-4), and there is no sharp Bragg peak corresponding to the crystal on the XRD diffraction pattern. Fig. 4 is a scanning electron microscope picture. At this time, the cross-section of the coating grows disorderly and the surface morphology is loose. Its mechanical properties are shown in Figure 6, and the hardness is 46.0GPa at this time. The H/E and H 3 /E 2 ratios were 0.16 and 1.32 GPa. And the wear rate shown in FIG. 8 was 2.57×10 −11 m 3 /N·m.
制备得TiB2涂层中TiB2层的厚度在3μm左右。The thickness of the TiB 2 layer in the prepared TiB 2 coating is about 3 μm.
实施例5Example 5
同实施例3,区别在于,步骤(4)中的基体偏压为200V。Same as
其X射线衍射(XRD)如图3所示(PMS-5),XRD衍射花样上没有晶体相对应的尖锐的布拉格峰。如图4为扫描电子显微镜图片,此时的涂层截面生长无序,表面形貌松散。其力学性能如图6所示,此时硬度为30.0GPa。H/E和H3/E2比值为0.10和0.32GPa。并且图8所示磨损率为2.64×10-11m3/N·m。Its X-ray diffraction (XRD) is shown in Figure 3 (PMS-5), and there is no sharp Bragg peak corresponding to the crystal on the XRD diffraction pattern. Fig. 4 is a scanning electron microscope picture. At this time, the cross-section of the coating grows disorderly and the surface morphology is loose. Its mechanical properties are shown in Figure 6, and the hardness is 30.0GPa at this time. The H/E and H 3 /E 2 ratios were 0.10 and 0.32 GPa. And the wear rate shown in FIG. 8 was 2.64×10 −11 m 3 /N·m.
制备得TiB2涂层中TiB2层的厚度在3μm左右。The thickness of the TiB 2 layer in the prepared TiB 2 coating is about 3 μm.
实施例6Example 6
一种TiB2/Ti复合涂层的制备方法:A preparation method of TiB 2 /Ti composite coating:
(1)基底材料的预处理:选择尺寸为20mm×20mm×2mm的WC硬质合金块作为基底材料,然后依次用200目、600、1000目、2000目的砂纸打磨,打磨完成后将基底材料放入丙酮中超声清洗30min,然后再放入无水乙醇中超声清洗30min后氮气吹干,立即装夹放入磁控溅射设备的腔体样品基台处。(1) Pretreatment of the base material: Select a WC cemented carbide block with a size of 20mm×20mm×2mm as the base material, and then use 200-mesh, 600-mesh, 1000-mesh, and 2000-mesh sandpaper in sequence. After grinding, place the base material on the It was ultrasonically cleaned in acetone for 30 min, then placed in anhydrous ethanol for ultrasonic cleaning for 30 min, dried with nitrogen, and then clamped and placed at the cavity sample base of the magnetron sputtering equipment.
(2)基台加热:关闭真空腔室,用抽真空系统抽气压至5×10-3Pa,然后打开加热电阻丝,加热样品基台3h至温度达到350℃。(2) Base heating: Close the vacuum chamber, use the vacuum system to evacuate the pressure to 5×10 -3 Pa, then turn on the heating resistance wire, and heat the sample base for 3 hours until the temperature reaches 350°C.
(3)预溅射:向真空腔室中通入氩气,保持0.8Pa的工作气压,关闭挡板,采用直流磁控溅射的方法,在功率为300W,基体偏压为-300V的条件下,对基底材料和靶材(靶材为热压烧结TiB2陶瓷靶,纯度为99.9%)进行30min的预溅射处理。(3) Pre-sputtering: Pour argon gas into the vacuum chamber, keep the working pressure of 0.8Pa, close the baffle, adopt the method of DC magnetron sputtering, under the condition of power of 300W and substrate bias of -300V Next, the base material and the target material (the target material is a hot-pressed sintered TiB 2 ceramic target with a purity of 99.9%) are subjected to a pre-sputtering treatment for 30 minutes.
(4)Ti过渡层的沉积:将Ti金属单质(纯度为99%)和基底材料的距离设定为10cm,然后采用直流磁控溅射的方法在基底材料上沉积Ti过渡层,得到具有Ti过渡层的基底材料。(4) Deposition of Ti transition layer: The distance between the Ti metal element (purity of 99%) and the base material is set to 10 cm, and then the Ti transition layer is deposited on the base material by DC magnetron sputtering to obtain a Ti transition layer. Base material for transition layers.
直流磁控溅射的腔体沉积温度为350℃,工作气压为0.8Pa,电源功率为300W,基体偏压为-100V,通入氩气,样品基台的旋转速度为30rmp,工作时长为30min。The deposition temperature of the DC magnetron sputtering chamber is 350°C, the working pressure is 0.8Pa, the power supply is 300W, the substrate bias voltage is -100V, argon gas is introduced, the rotation speed of the sample base is 30rmp, and the working time is 30min. .
(5)TiB2硬质保护层的沉积:打开挡板,将靶材和基底材料的距离(靶基距)设定为10cm,然后采用直流脉冲磁控溅射的方法,在具有Ti过渡层的基底材料上沉积靶材得到TiB2硬质保护层,关闭溅射电源,然后关闭加热装置,等待温度降温至100℃,依次关闭分子泵、机械泵、冷却水,静置6h以上后,打开真空腔室取出样品,得到具有TiB2/Ti复合涂层的材料。(5) Deposition of TiB 2 hard protective layer: open the baffle, set the distance between the target and the base material (target-base distance) to 10cm, and then adopt the method of DC pulse magnetron sputtering, with a Ti transition layer Deposition the target material on the base material to obtain the TiB 2 hard protective layer, turn off the sputtering power supply, then turn off the heating device, wait for the temperature to drop to 100 ° C, turn off the molecular pump, mechanical pump, cooling water in turn, after standing for more than 6h, turn on The samples were taken out of the vacuum chamber, and the material with the TiB 2 /Ti composite coating was obtained.
直流脉冲磁控溅射的腔体沉积温度为350℃,工作气压为0.8Pa,基体偏压为0V,电源功率为300W,占空比为50%,通入氩气,样品基台的旋转速度为30rmp,工作时长为3h,沉积速率为20nm/min。The deposition temperature of the DC pulse magnetron sputtering chamber is 350°C, the working pressure is 0.8Pa, the substrate bias is 0V, the power supply is 300W, the duty cycle is 50%, and argon gas is introduced, and the rotation speed of the sample base is is 30rmp, the working time is 3h, and the deposition rate is 20nm/min.
通过力学性能测试,实施例6样品硬度为40.21GPa。H/E和H3/E2比值为0.16和1.11GPa。磨损率为1.28×10-11m3/N·m。划痕测试结合力结果显示,临界载荷LC1:15.178N、LC2:23.532N、LC3:27.476N。Through the mechanical property test, the hardness of the sample of Example 6 is 40.21GPa. The H/E and H 3 /E 2 ratios were 0.16 and 1.11 GPa. The wear rate was 1.28×10 -11 m 3 /N·m. The results of the scratch test binding force show that the critical load is LC1: 15.178N, LC2: 23.532N, and LC3: 27.476N.
制备得涂层中TiB2/Ti复合涂层中TiB2层的厚度在3μm左右,Ti层的厚度在0.5μm左右。The thickness of TiB 2 layer in the prepared TiB 2 /Ti composite coating is about 3 μm, and the thickness of Ti layer is about 0.5 μm.
实施例7Example 7
同实施例6,区别在于,步骤(4)中的靶基距为15cm。Same as Example 6, the difference is that the target-to-base distance in step (4) is 15 cm.
实施例8Example 8
同实施例6,区别在于,步骤(4)中的靶基距为5cm。Same as Example 6, the difference is that the target-to-base distance in step (4) is 5 cm.
实施例9Example 9
同实施例6,区别在于,步骤(4)中的工作气压为5Pa。With
实施例10Example 10
同实施例6,区别在于,步骤(4)中的工作气压为0.1Pa。Same as Example 6, the difference is that the working air pressure in step (4) is 0.1Pa.
实施例11Example 11
同实施例6,区别在于,步骤(4)中的基体偏压为300V。Same as
实施例12Example 12
同实施例6,区别在于,步骤(4)中的样品基台的旋转速度为30rmp。Same as Example 6, the difference is that the rotation speed of the sample base in step (4) is 30 rmp.
对比例1Comparative Example 1
同实施例6,区别在于,步骤(3)中直流磁控溅射的功率为300W,基体偏压为-100V,工作时长为10min。Same as Example 6, the difference is that in step (3), the power of DC magnetron sputtering is 300W, the substrate bias voltage is -100V, and the working time is 10min.
对比例2Comparative Example 2
同实施例6,区别在于,步骤(4)中的工作时长为1h。Same as
效果例1Effect example 1
测定实施例3和实施例6制备的涂层的结合力值,结果见表1。The binding force values of the coatings prepared in Example 3 and Example 6 were determined, and the results are shown in Table 1.
表1Table 1
图1为本发明采用的控溅射设备示意图;Fig. 1 is the schematic diagram of the sputtering control equipment adopted in the present invention;
图2为本发明实施例1~5和实施例6制备的涂层的结构示意图;2 is a schematic structural diagram of the coatings prepared in Examples 1 to 5 and Example 6 of the present invention;
图3本发明实施例1~5制备得到的TiB2涂层的XRD衍射图,其中PMS-1为实施例1,PMS-2实施例2,PMS-3实施例3,PMS-4实施例4,PMS-5实施例5;Fig. 3 XRD diffractograms of TiB coatings prepared in Examples 1 to 5 of the present invention, wherein PMS-1 is Example 1, PMS-2 Example 2, PMS-3 Example 3, and PMS-4 Example 4 , PMS-5
图4为本发明实施例1~5制备得到的TiB2涂层的扫描电子显微镜照片,其中(a)为实施例1,(b)为实施例2,(c)为实施例3,(d)为实施例4,(e)为实施例5;4 is a scanning electron microscope photograph of the TiB coating prepared in Examples 1 to 5 of the present invention, wherein (a) is Example 1, (b) is Example 2, (c) is Example 3, and (d) ) is
图5为本发明实施例3制备得到的TiB2涂层表面元素扫描分布图(EDS);Fig. 5 is the TiB coating surface element scanning distribution diagram (EDS) prepared in Example 3 of the present invention;
图6为本发明实施例1~5制备得到的TiB2涂层的力学测试结果图,其中(a)为硬度,(b)为弹性模量,(c)为实例5的加载-卸载曲线数据分析,(d)为实例1~5的加载-卸载曲线;6 is a graph showing the mechanical test results of TiB coatings prepared in Examples 1 to 5 of the present invention, wherein (a) is the hardness, (b) is the elastic modulus, and (c) is the loading-unloading curve data of Example 5 Analysis, (d) is the loading-unloading curve of Examples 1-5;
图7为本发明实施例1~5制备得到的TiB2涂层的H/E和H3/E2比值统计图;Fig. 7 is the H/E and H 3 /E 2 ratio statistics diagram of the TiB 2 coatings prepared in Examples 1-5 of the present invention;
图8为本发明实施例1~5制备得到的TiB2涂层的摩擦学测试结果图,其中(a)为摩擦系数,(b)为磨损率;8 is a graph showing the results of tribological testing of TiB coatings prepared in Examples 1 to 5 of the present invention, wherein (a) is the coefficient of friction, and (b) is the wear rate;
图9为本发明实例3和实例6制备的涂层的划痕测试图,其中(a)为实例6的划痕图,(b)为实例3的划痕图;9 is a scratch test chart of the coatings prepared in Examples 3 and 6 of the present invention, wherein (a) is the scratch chart of Example 6, and (b) is the scratch chart of Example 3;
图10为本发明实例3和实例6制备的涂层的力学测试结果图,其中(a)为硬度,(b)为弹性模量,(c)为加载-卸载曲线,(d)为H/E和H3/E2的比值;Figure 10 is a graph showing the mechanical test results of the coatings prepared in Examples 3 and 6 of the present invention, wherein (a) is hardness, (b) is elastic modulus, (c) is loading-unloading curve, and (d) is H/ The ratio of E and H 3 /E 2 ;
图11为本发明实施例6制备得到的TiB2涂层的结构图;11 is a structural diagram of the TiB coating prepared in Example 6 of the present invention;
图12为本发明实施例3使用的材料及获得的具有涂层的材料的照片,其中(a)为硬质合金块,(b)为具有TiB2涂层的硬质合金块正面,(c)为具有TiB2涂层的硬质合金块背面。Figure 12 is a photograph of the material used in Example 3 of the present invention and the obtained material with coating, wherein (a) is a cemented carbide block, (b) is the front side of the cemented carbide block with TiB coating, (c ) ) is the backside of the cemented carbide block with TiB coating.
图13为为本发明实施例1~5制备得到的涂层的电极化曲线图。FIG. 13 is an electric polarization curve diagram of the coatings prepared in Examples 1 to 5 of the present invention.
从图13中可以看出,实施例1~5制备得到的涂层在氯化钠溶液中经过测试腐蚀电流21.7μA·cm-2~1.159μA·cm-2。It can be seen from FIG. 13 that the coatings prepared in Examples 1 to 5 have tested corrosion currents of 21.7 μA·cm −2 to 1.159 μA·cm −2 in sodium chloride solution.
由以上实施例的相关性能测试和数据分析可以看出,通过提高沉积过程的基体偏压,涂层逐渐转变为(001)晶面择优取向生长(实施例1为0.149,实施例5为0.751),涂层的显微结构、硬度和韧性(H3/E2比值)随之改变。这是由于涂层的生长始终遵循总自由能最低的原则,通过提高沉积过程的基体偏压,可以使离化后的粒子在电场作用下加速轰击表面,促进了粒子在涂层表面的扩散。同时,基体偏压的改变对TiB2涂层的耐磨性能产生很大影响。成功制备的TiB2/Ti过渡层结构不仅具有极佳的力学性能、耐磨性,且其与基底的结合力被大幅度提升。并且TiB2/Ti复合涂层导电性经过测试为5~7×10-6Ω·m。综上所述,适当工艺参数和使用过渡层结构后制备的涂层,获得了极佳的表面强度,提升了其力学性能、耐磨性能及膜基结合力,极大地拓展了二硼化钛涂层的应用场景。From the relevant performance tests and data analysis of the above examples, it can be seen that by increasing the substrate bias in the deposition process, the coating gradually transforms into (001) crystal plane preferentially oriented growth (0.149 for Example 1 and 0.751 for Example 5) , the microstructure, hardness and toughness (H 3 /E 2 ratio) of the coating changed accordingly. This is because the growth of the coating always follows the principle of the lowest total free energy. By increasing the substrate bias in the deposition process, the ionized particles can be accelerated to bombard the surface under the action of the electric field, and the diffusion of the particles on the coating surface can be promoted. At the same time, the change of substrate bias has a great influence on the wear resistance of TiB coating. The successfully prepared TiB 2 /Ti transition layer structure not only has excellent mechanical properties and wear resistance, but also its bonding force with the substrate is greatly improved. And the conductivity of TiB 2 /Ti composite coating was tested to be 5~7×10 -6 Ω·m. To sum up, the coating prepared by appropriate process parameters and using the transition layer structure can obtain excellent surface strength, improve its mechanical properties, wear resistance and film-base bonding force, and greatly expand the titanium diboride. Coating application scenarios.
以上所述的实施例仅是对本发明的优选方式进行描述,并非对本发明的范围进行限定,在不脱离本发明设计精神的前提下,本领域普通技术人员对本发明的技术方案做出的各种变形和改进,均应落入本发明权利要求书确定的保护范围内。The above-mentioned embodiments are only to describe the preferred mode of the present invention, but not to limit the scope of the present invention. Without departing from the design spirit of the present invention, those of ordinary skill in the art can Variations and improvements should fall within the protection scope determined by the claims of the present invention.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210386192.9A CN114672779A (en) | 2022-04-13 | 2022-04-13 | A kind of preparation method of TiB2/Ti composite coating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210386192.9A CN114672779A (en) | 2022-04-13 | 2022-04-13 | A kind of preparation method of TiB2/Ti composite coating |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114672779A true CN114672779A (en) | 2022-06-28 |
Family
ID=82078327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210386192.9A Pending CN114672779A (en) | 2022-04-13 | 2022-04-13 | A kind of preparation method of TiB2/Ti composite coating |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN114672779A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116083847A (en) * | 2023-01-16 | 2023-05-09 | 厦门金鹭特种合金有限公司 | Titanium diboride hard coating, coated cutter and preparation method |
CN116083847B (en) * | 2023-01-16 | 2025-03-25 | 厦门金鹭特种合金有限公司 | Titanium diboride hard coating, coated tool and preparation method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5757864A (en) * | 1980-08-26 | 1982-04-07 | Hitachi Metals Ltd | Coated super hard alloy tool |
CN102580169A (en) * | 2012-02-28 | 2012-07-18 | 淮阴工学院 | Coating for improving bioactivity of stainless-steel bone lamella and bone nail |
US20130045334A1 (en) * | 2008-05-16 | 2013-02-21 | BABCOCK & WILCOX TECHNICAL SERVICES Y-12, L.L.C. Attn. Mike Renner | Hardface coating systems and methods for metal alloys and other materials for wear and corrosion resistant applications |
CN106756849A (en) * | 2016-12-21 | 2017-05-31 | 深圳先进技术研究院 | A kind of PCB with transition metal boride coating micro- brills and preparation method thereof |
CN106794585A (en) * | 2014-07-31 | 2017-05-31 | 比克-维尔莱克 | Razor blade coating |
CN108118304A (en) * | 2017-12-22 | 2018-06-05 | 富耐克超硬材料股份有限公司 | Nano-composite coating and its preparation process |
CN113174571A (en) * | 2021-04-08 | 2021-07-27 | 广东工业大学 | Ultra-microcrystalline titanium diboride composite coating and preparation method and application thereof |
-
2022
- 2022-04-13 CN CN202210386192.9A patent/CN114672779A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5757864A (en) * | 1980-08-26 | 1982-04-07 | Hitachi Metals Ltd | Coated super hard alloy tool |
US20130045334A1 (en) * | 2008-05-16 | 2013-02-21 | BABCOCK & WILCOX TECHNICAL SERVICES Y-12, L.L.C. Attn. Mike Renner | Hardface coating systems and methods for metal alloys and other materials for wear and corrosion resistant applications |
CN102580169A (en) * | 2012-02-28 | 2012-07-18 | 淮阴工学院 | Coating for improving bioactivity of stainless-steel bone lamella and bone nail |
CN106794585A (en) * | 2014-07-31 | 2017-05-31 | 比克-维尔莱克 | Razor blade coating |
CN106756849A (en) * | 2016-12-21 | 2017-05-31 | 深圳先进技术研究院 | A kind of PCB with transition metal boride coating micro- brills and preparation method thereof |
CN108118304A (en) * | 2017-12-22 | 2018-06-05 | 富耐克超硬材料股份有限公司 | Nano-composite coating and its preparation process |
CN113174571A (en) * | 2021-04-08 | 2021-07-27 | 广东工业大学 | Ultra-microcrystalline titanium diboride composite coating and preparation method and application thereof |
Non-Patent Citations (2)
Title |
---|
M. BERGER等: "Low stress TiB2 coatings with improved tribological properties", 《THIN SOLID FILMS》 * |
MU-JIAN XIA等: "Improvement of adhesion properties of TiB2 films on 316L stainless steel by Ti interlayer films", 《TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116083847A (en) * | 2023-01-16 | 2023-05-09 | 厦门金鹭特种合金有限公司 | Titanium diboride hard coating, coated cutter and preparation method |
CN116083847B (en) * | 2023-01-16 | 2025-03-25 | 厦门金鹭特种合金有限公司 | Titanium diboride hard coating, coated tool and preparation method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107130222B (en) | High-power pulsed magnetron sputtering CrAlSiN nanocomposite coating and preparation method thereof | |
Musil | Flexible hard nanocomposite coatings | |
CN107620033B (en) | A kind of preparation method of high-purity strong dense MAX phase coating | |
CN101435071B (en) | Preparation of wear resistant and oxidation resistant TiAlSiCN film | |
CN108884550B (en) | Hydrogen-free carbon coating with zirconium adhesion layer | |
CN101798678B (en) | A Novel Superhard TiB2/c-BN Nano-Multilayer Film Prepared by Magnetron Sputtering Technology | |
CN106521440A (en) | Method for preparing high-adhesion aluminum laminated film by adopting magnetron sputtering method | |
CN108517487B (en) | A kind of TiAlN/W2N multilayer coating with high hardness and high wear resistance and preparation method thereof | |
CN108611613B (en) | Preparation method of nano multilayer structure carbon-based film | |
CN212335269U (en) | Composite coating deposited on surface of cubic boron nitride cutter and vacuum coating device | |
CN103212729A (en) | Numerical control cutting tool with CrAlTiN superlattice coating and manufacturing method thereof | |
CN114000115B (en) | A Ti-B-N nanocomposite coating and its preparation method | |
CN107267916A (en) | It is a kind of in method of the carbide surface by Deposited By Dc Magnetron Sputtering W N hard films | |
CN108231322A (en) | A kind of deposition has Sintered NdFeB magnet of laminated film and preparation method thereof | |
CN101531074B (en) | Superhard TiB2/Si3N4 nano-multilayer film and its preparation method | |
CN112410728A (en) | High Cr content CrB2Preparation process of-Cr coating | |
CN113174571B (en) | Ultra-microcrystalline titanium diboride composite coating and preparation method and application thereof | |
JP2022520091A (en) | How to improve the coercive force, wear resistance and corrosion resistance of neodymium iron boron magnets | |
CN111321381A (en) | AlCrNbSiTiBN-based nanocomposite coating for cemented carbide inserts and preparation method thereof | |
CN114703452B (en) | CoCrFeNi high-entropy alloy doped amorphous carbon film and preparation method thereof | |
CN105463391B (en) | A kind of nanocrystalline ZrB2Superhard coating and preparation method | |
CN115627445B (en) | Anti-adhesion high-entropy boride composite coating for aluminum die-casting die and preparation method of composite coating | |
CN103938157A (en) | ZrNbAlN superlattice coating and preparation method | |
CN103317793B (en) | A kind of diamond-like ground mass nano-composite coating cutter and preparation method thereof | |
CN108441825B (en) | Preparation method and product of doped metal diamond-like carbon coating |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
AD01 | Patent right deemed abandoned | ||
AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20231027 |