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CN104749806A - Array substrate, display panel and display device - Google Patents

Array substrate, display panel and display device Download PDF

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Publication number
CN104749806A
CN104749806A CN201510172719.8A CN201510172719A CN104749806A CN 104749806 A CN104749806 A CN 104749806A CN 201510172719 A CN201510172719 A CN 201510172719A CN 104749806 A CN104749806 A CN 104749806A
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CN
China
Prior art keywords
area
electrode
display
array base
base palte
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Granted
Application number
CN201510172719.8A
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Chinese (zh)
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CN104749806B (en
Inventor
李光
刘利宾
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN201510172719.8A priority Critical patent/CN104749806B/en
Publication of CN104749806A publication Critical patent/CN104749806A/en
Application granted granted Critical
Publication of CN104749806B publication Critical patent/CN104749806B/en
Priority to US15/513,743 priority patent/US9899431B2/en
Priority to PCT/CN2016/076261 priority patent/WO2016165512A1/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13454Drivers integrated on the active matrix substrate
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0404Matrix technologies
    • G09G2300/0408Integration of the drivers onto the display substrate
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0421Structural details of the set of electrodes
    • G09G2300/0426Layout of electrodes and connections
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266Details of drivers for scan electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3677Details of drivers for scan electrodes suitable for active matrices only

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明实施例提供一种阵列基板、显示面板及显示装置,涉及显示技术领域,可在不影响封装效果的情况下,减小显示面板的边框宽度,更符合目前市场对于窄边框显示产品的需求。该阵列基板具有显示区域、封装区域以及驱动电路区域,驱动电路区域位于显示区域与封装区域之间;该阵列基板具体包括:设置在封装区域的封装金属层,封装金属层靠近驱动电路区域的一侧上设置有至少一个凹槽结构;设置在驱动电路区域的至少一个驱动单元,驱动单元包括电容结构;其中:电容结构设置在凹槽结构中,且一个凹槽结构用于容纳一个电容结构。用于阵列基板及包括该阵列基板的显示面板及显示装置的制备。

Embodiments of the present invention provide an array substrate, a display panel, and a display device, which relate to the field of display technology, and can reduce the frame width of the display panel without affecting the packaging effect, which is more in line with the current market demand for narrow frame display products . The array substrate has a display area, a packaging area and a driving circuit area, and the driving circuit area is located between the display area and the packaging area; the array substrate specifically includes: a packaging metal layer arranged in the packaging area, and a packaging metal layer close to the driving circuit area At least one groove structure is arranged on the side; at least one driving unit is arranged in the driving circuit area, and the driving unit includes a capacitor structure; wherein: the capacitor structure is arranged in the groove structure, and one groove structure is used to accommodate one capacitor structure. It is used for the preparation of array substrates, display panels and display devices including the array substrates.

Description

一种阵列基板、显示面板及显示装置Array substrate, display panel and display device

技术领域technical field

本发明涉及显示技术领域,尤其涉及一种阵列基板、显示面板及显示装置。The present invention relates to the field of display technology, in particular to an array substrate, a display panel and a display device.

背景技术Background technique

窄边框显示产品是指显示区域(Ative Area,简称AA区)与非显示区域的比例较大,用户在观看图像显示时可获得更优的体验。此外,当窄边框显示产品,如显示面板应用于拼接屏时,由于单个显示面板的边框很窄,能够降低拼接处拼缝的宽度,可显著提高拼接屏的整体显示效果。因此,目前市场对于窄边框显示产品的需求越来越迫切。Narrow bezel display products mean that the ratio of the display area (Active Area, AA area for short) to the non-display area is relatively large, and users can obtain a better experience when viewing image display. In addition, when a narrow frame display product, such as a display panel, is applied to a splicing screen, since the frame of a single display panel is very narrow, the width of the splicing seam can be reduced, which can significantly improve the overall display effect of the splicing screen. Therefore, the current market demand for narrow bezel display products is becoming more and more urgent.

目前,显示产品窄边框的设计主要存在以下两点制约因素:At present, the design of narrow bezels for display products mainly has the following two constraints:

其一、如图1所示,目前显示技术中常用的驱动电路,如栅极驱动电路为GOA(Gate Driver on Array,阵列基板行驱动)电路,在该技术中,GOA电路被直接制作在阵列基板上,从而省略了在传统阵列基板上设置面积较大的栅极驱动IC(Integrated Circuit,集成电路)、用于固定栅极驱动IC的COF(Chip On Film,柔性电路薄膜)以及相应的引线等电路结构部分。因此,相比于传统的显示产品,具有GOA电路的阵列基板可减小对盒后的显示面板的非显示区域的一部分面积。First, as shown in Figure 1, the current commonly used drive circuits in display technology, such as gate drive circuits, are GOA (Gate Driver on Array, array substrate row drive) circuits. In this technology, the GOA circuit is directly fabricated on the array On the substrate, thereby omitting the large-area gate drive IC (Integrated Circuit, integrated circuit), the COF (Chip On Film, flexible circuit film) used to fix the gate drive IC, and the corresponding leads on the traditional array substrate and other circuit structures. Therefore, compared with traditional display products, the array substrate with the GOA circuit can reduce a part of the non-display area of the boxed display panel.

然而,由于GOA电路相比于传统的栅极驱动IC已经非常简化,对GOA电路再进行简化的难度非常大。因此,很难进一步减小驱动电路区域03所占据的非显示区域的面积。However, since the GOA circuit is very simplified compared with the traditional gate driver IC, it is very difficult to simplify the GOA circuit. Therefore, it is difficult to further reduce the area of the non-display region occupied by the driving circuit region 03 .

其二、参考图1所示,对于尺寸一定的显示面板而言,位于显示区域01四周的封装区域02所需的面积也是一定的;如果封装区域02的面积过小,会导致显示面板出现封装不良、盒厚不一等严重缺陷,影响显示面板的正常显示。因此,封装区域所需的面积也是难以进一步减小的。Second, as shown in FIG. 1, for a display panel with a certain size, the required area of the encapsulation area 02 around the display area 01 is also certain; if the area of the encapsulation area 02 is too small, the display panel will be packaged. Serious defects such as poor quality and uneven box thickness will affect the normal display of the display panel. Therefore, it is also difficult to further reduce the area required for the packaging area.

发明内容Contents of the invention

鉴于此,为解决现有技术的问题,本发明的实施例提供一种阵列基板、显示面板及显示装置,可在不影响封装效果的情况下,减小显示面板的边框宽度,更符合目前市场对于窄边框显示产品的需求。In view of this, in order to solve the problems of the prior art, the embodiments of the present invention provide an array substrate, a display panel and a display device, which can reduce the frame width of the display panel without affecting the packaging effect, and are more in line with the current market The demand for display products with narrow borders.

为达到上述目的,本发明提供的实施例采用如下技术方案:In order to achieve the above object, the embodiments provided by the invention adopt the following technical solutions:

一方面、本发明实施例提供了一种阵列基板,所述阵列基板具有显示区域、封装区域以及驱动电路区域,所述驱动电路区域位于所述显示区域与所述封装区域之间;所述阵列基板包括:设置在所述封装区域的封装金属层,所述封装金属层靠近所述驱动电路区域的一侧上设置有至少一个凹槽结构;设置在所述驱动电路区域的至少一个驱动单元,所述驱动单元包括电容结构;其中:所述电容结构设置在所述凹槽结构中,且一个所述凹槽结构用于容纳一个所述电容结构。On the one hand, an embodiment of the present invention provides an array substrate, the array substrate has a display area, a packaging area, and a driving circuit area, and the driving circuit area is located between the display area and the packaging area; the array The substrate includes: an encapsulation metal layer disposed in the encapsulation area, at least one groove structure is disposed on a side of the encapsulation metal layer close to the drive circuit area; at least one drive unit disposed in the drive circuit area, The drive unit includes a capacitive structure; wherein: the capacitive structure is disposed in the groove structure, and one groove structure is used to accommodate one capacitive structure.

优选的,所述阵列基板还包括绝缘层;沿垂直于所述阵列基板的板面方向,所述电容结构包括:相对设置且绝缘的第一电极与第二电极;所述绝缘层至少位于所述第一电极与所述第二电极之间;所述封装金属层与所述第一电极或所述第二电极同层设置。Preferably, the array substrate further includes an insulating layer; along the direction perpendicular to the plate surface of the array substrate, the capacitor structure includes: a first electrode and a second electrode that are oppositely arranged and insulated; the insulating layer is at least located on the between the first electrode and the second electrode; the encapsulation metal layer is provided on the same layer as the first electrode or the second electrode.

进一步优选的,所述驱动单元还包括:至少一个薄膜晶体管;所述第一电极与所述薄膜晶体管的栅极金属层同层设置;所述第二电极与所述薄膜晶体管的源极和漏极金属层同层设置。Further preferably, the driving unit further includes: at least one thin film transistor; the first electrode is arranged on the same layer as the gate metal layer of the thin film transistor; the second electrode is connected to the source and drain of the thin film transistor The pole metal layers are arranged on the same layer.

在上述基础上优选的,所述驱动电路区域包括栅极驱动电路区域;所述驱动单元包括位于所述栅极驱动电路区域的栅极驱动单元。Preferably on the basis of the above, the driving circuit area includes a gate driving circuit area; the driving unit includes a gate driving unit located in the gate driving circuit area.

在上述基础上优选的,所述栅极驱动电路区域位于所述显示区域沿栅线方向的一侧或两侧。Preferably, on the basis of the above, the gate driving circuit area is located on one side or both sides of the display area along the direction of the gate lines.

在上述基础上优选的,所述阵列基板还包括:位于所述封装金属层上的封装胶。Preferably on the basis of the above, the array substrate further includes: an encapsulation glue on the encapsulation metal layer.

另一方面、本发明实施例还提供了一种显示面板,包括上述的所述的阵列基板。On the other hand, an embodiment of the present invention further provides a display panel, including the above-mentioned array substrate.

再一方面、本发明实施例还提供了一种显示装置,包括上述的所述的显示面板。In yet another aspect, an embodiment of the present invention further provides a display device, including the above-mentioned display panel.

基于此,在本发明实施例提供的上述阵列基板中,由于封装金属层靠近驱动电路区域的一侧上设置有至少一个凹槽结构,且一个凹槽结构用于容纳一个电容结构,即凹槽结构与电容结构之间为一一对应的关系。因此,上述结构相当于将相对面积较大的电容结构所占据的区域穿插进了封装区域中,即封装区域与驱动电路区域以凹凸穿插的方式相互靠近。相比于现有技术的边框宽度a,当显示区域的尺寸不变,且不改变驱动电路中的电容结构的正对面积时,本发明实施例提供的上述阵列基板的边框宽度a'由于明显减小了电容结构所占据的区域的宽度,而使得本发明实施例提供的上述阵列基板的边框宽度a'明显减小现有技术的边框宽度a。Based on this, in the above-mentioned array substrate provided by the embodiment of the present invention, at least one groove structure is provided on the side of the packaging metal layer close to the driving circuit area, and one groove structure is used to accommodate a capacitor structure, that is, the groove There is a one-to-one correspondence between the structure and the capacitance structure. Therefore, the above structure is equivalent to interspersing the area occupied by the capacitor structure with a relatively large area into the packaging area, that is, the packaging area and the driving circuit area are close to each other in a concave-convex interspersed manner. Compared with the frame width a of the prior art, when the size of the display area remains unchanged and the facing area of the capacitive structure in the driving circuit does not change, the frame width a' of the array substrate provided by the embodiment of the present invention is obviously The width of the region occupied by the capacitor structure is reduced, so that the frame width a' of the array substrate provided by the embodiment of the present invention is significantly reduced from the frame width a of the prior art.

并且,由于凹槽结构仅设置在封装金属层靠近驱动电路区域的一侧上,对封装金属层为达到相应的封装效果所需的整体面积的影响很小,从而可在不影响封装效果的前提下明显减小现有技术的边框宽度。Moreover, since the groove structure is only arranged on the side of the packaging metal layer close to the driving circuit area, it has little influence on the overall area required for the packaging metal layer to achieve the corresponding packaging effect, so that the packaging effect can not be affected. The frame width of the prior art is significantly reduced.

这样一来,对于具有同样尺寸的显示面板而言,由于本发明实施例提供的上述阵列基板可具有更小的边框宽度a',可以将显示区域的面积制备的更大,从而使得显示区域与非显示区域的比例更大,用户在观看图像显示时可获得更优的体验;并且,使得采用上述阵列基板的显示面板应用于拼接屏时,每一子屏间的拼缝更小,显示效果更优。In this way, for a display panel with the same size, since the above-mentioned array substrate provided by the embodiment of the present invention can have a smaller frame width a', the area of the display area can be made larger, so that the display area and The proportion of the non-display area is larger, and the user can obtain a better experience when viewing the image display; and, when the display panel using the above-mentioned array substrate is applied to the splicing screen, the splicing seam between each sub-screen is smaller, and the display effect is improved. better.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

图1为现有技术中提供一种阵列基板的各区域俯视结构示意图;FIG. 1 is a schematic diagram of a top view structure of each region of an array substrate provided in the prior art;

图2为本发明实施例提供的一种阵列基板的俯视结构示意图;FIG. 2 is a schematic top view of an array substrate provided by an embodiment of the present invention;

图3为图2中A-A'剖视放大示意图一;Fig. 3 is AA' cross-sectional enlarged schematic diagram 1 in Fig. 2;

图4为图2中A-A'剖视放大示意图二;Fig. 4 is AA' cross-sectional enlarged schematic diagram II in Fig. 2;

图5为图2中A-A'剖视放大示意图三。FIG. 5 is the third enlarged schematic view of the section AA' in FIG. 2 .

附图标记:Reference signs:

01-显示区域;02-封装区域;03-驱动电路区域;100-衬底基板;11-电容结构;111-第一电极;112-第二电极;12-封装金属层;120-凹槽结构;13-绝缘层;14-栅极金属层;15-源极和漏极金属层。01-display area; 02-package area; 03-drive circuit area; 100-substrate substrate; 11-capacitance structure; 111-first electrode; 112-second electrode; 12-package metal layer; 120-groove structure ; 13-insulating layer; 14-gate metal layer; 15-source and drain metal layer.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

需要指出的是,除非另有定义,本发明实施例中所使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员共同理解的相同含义。还应当理解,诸如在通常字典里定义的那些术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义,而不应用理想化或极度形式化的意义来解释,除非这里明确地这样定义。It should be noted that, unless otherwise defined, all terms (including technical and scientific terms) used in the embodiments of the present invention have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It should also be understood that terms such as those defined in common dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in idealized or extremely formalized meanings, unless explicitly stated herein defined in this way.

本发明实施例提供一种阵列基板,如图2所示,该阵列基板具有显示区域01、封装区域02以及驱动电路区域03,驱动电路区域03位于显示区域01与封装区域02之间;该阵列基板具体包括:设置在封装区域02的封装金属层12,封装金属层12靠近驱动电路区域03的一侧上设置有至少一个凹槽结构120;设置在驱动电路区域03的至少一个驱动单元,驱动单元包括电容结构11;其中:电容结构11设置在凹槽结构120中,且一个凹槽结构120用于容纳一个电容结构11。An embodiment of the present invention provides an array substrate. As shown in FIG. 2, the array substrate has a display area 01, a packaging area 02, and a driving circuit area 03, and the driving circuit area 03 is located between the display area 01 and the packaging area 02; the array The substrate specifically includes: the packaging metal layer 12 arranged in the packaging area 02, at least one groove structure 120 is arranged on the side of the packaging metal layer 12 close to the driving circuit area 03; at least one driving unit arranged in the driving circuit area 03, driving The unit includes a capacitor structure 11 ; wherein: the capacitor structure 11 is disposed in a groove structure 120 , and one groove structure 120 is used to accommodate one capacitor structure 11 .

首先,为方便理解本发明实施例,现对本发明实施例中涉及到的一些概念进行如下说明。First, to facilitate understanding of the embodiments of the present invention, some concepts involved in the embodiments of the present invention are described as follows.

1、封装金属层121. Packaging metal layer 12

常见的LCD(Liquid Crystal Display,液晶显示)产品或OLED(Organic Light-Emitting Display,有机电致发光显示)产品,其整体结构都是由阵列基板与对盒基板(彩膜基板或封装基板)对盒而成,需要通过在封装区域涂覆封装胶(通常为frit玻璃胶)来使二者对盒,为了使封框胶受热固化时均匀,并提高封装的密闭性,在阵列基板的封装区域上会先形成由一层或多层金属层构成的封装金属层,之后再在封装金属层上涂覆封框胶。Common LCD (Liquid Crystal Display, liquid crystal display) products or OLED (Organic Light-Emitting Display, organic electroluminescent display) products, the overall structure is composed of an array substrate and a box substrate (color film substrate or packaging substrate). To form a box, it is necessary to apply a packaging glue (usually frit glass glue) on the packaging area to make the two box together. In order to make the sealing glue uniform when heated and cure, and to improve the airtightness of the package, in the packaging area of the array substrate A packaging metal layer consisting of one or more metal layers is formed first, and then a sealant is coated on the packaging metal layer.

在本发明实施例中,封装金属层12可以为金属单质和/或合金,具体材料可沿用现有技术,不作限定。In the embodiment of the present invention, the encapsulation metal layer 12 may be a single metal and/or an alloy, and the specific material may follow the existing technology and is not limited.

2、驱动电路区域032. Drive circuit area 03

上述的驱动电路区域03是指设置有用于驱动阵列基板显示的电路,该驱动电路可以包括但不限于栅极驱动电路(GOA)、源极驱动电路。The driving circuit area 03 mentioned above refers to a circuit for driving the display of the array substrate, and the driving circuit may include but not limited to a gate driving circuit (GOA) and a source driving circuit.

3、电容结构113. Capacitor structure 11

以栅极驱动电路为例,常见的栅极驱动电路是由多个级联的栅极驱动单元构成,每个栅极驱动单元中均包括用于存储电量的栅极驱动电容结构,根据阵列基板中具体电路设计的不同,栅极驱动电路的结构也略有差异,在此不一一描述,但其原理都是在阵列基板中起到移位寄存器的作用,故所有的栅极驱动电路中必然都存在有上述的电容结构。Taking the gate drive circuit as an example, a common gate drive circuit is composed of multiple cascaded gate drive units, and each gate drive unit includes a gate drive capacitor structure for storing electricity. According to the array substrate The structure of the gate drive circuit is also slightly different depending on the specific circuit design, and will not be described here, but its principle is to play the role of a shift register in the array substrate, so all gate drive circuits There must be the above-mentioned capacitor structure.

本发明实施例对以栅极驱动单元为例的上述驱动单元中除电容结构11外的其余电路结构不作限定,可沿用现有技术的设计。The embodiment of the present invention does not limit the rest of the circuit structures in the above-mentioned drive unit except the capacitor structure 11 , taking the gate drive unit as an example, and the design of the prior art can be used.

这里,由于电容器可分为多种,如圆柱电容器、球形电容器以及平板电容器等。其中,平板电容器是由间隔一定距离,中间以空间或介电质隔离的两片电极板构成。本发明具体实施例中涉及到的上述电容结构11为平板电容器。Here, because capacitors can be divided into many types, such as cylindrical capacitors, spherical capacitors, and flat-plate capacitors. Among them, the plate capacitor is composed of two electrode plates separated by a certain distance and separated by a space or a dielectric in the middle. The above-mentioned capacitor structure 11 involved in the specific embodiment of the present invention is a flat-plate capacitor.

由于整个栅极驱动电路为了实现上述的移位寄存器的作用,电容结构11需具有一定的电量存储能力(以C来表征);并且,当栅极驱动电路应用于驱动尺寸更大的显示面板时,为了响应大尺寸显示面板对行驱动电路的要求,上述电容结构11的电容C也会随着增大。In order to realize the above-mentioned function of the shift register in the entire gate drive circuit, the capacitor structure 11 needs to have a certain power storage capacity (characterized by C); and, when the gate drive circuit is applied to drive a display panel with a larger size In order to respond to the requirement of the large-size display panel for the row driving circuit, the capacitance C of the above-mentioned capacitance structure 11 will also increase accordingly.

平板电容器的电容C具有以下表达式:The capacitance C of a plate capacitor has the following expression:

CC == ϵϵ ·&Center Dot; AA dd ;;

其中,ε为介质的电容器率,A为电极板的正对面积,d为电极板间隔距离。Among them, ε is the capacitance ratio of the medium, A is the facing area of the electrode plates, and d is the distance between the electrode plates.

由上述表达式可知,电容C与介质的电容器率ε、电极板的正对面积A、以及电极板间隔距离d有关。It can be seen from the above expression that the capacitance C is related to the capacitance ratio ε of the medium, the facing area A of the electrode plates, and the distance d between the electrode plates.

对于具有一定设计规格要求的栅极驱动单元中的电容结构11而言,由于应用于显示面板的介质材料通常为氮化硅、氧化硅等材料,电容器率ε的数值相对固定;而电极板间隔距离d难以进一步减小,因此,对于显示面板而言,可以认为上述电容结构11的电容C正比于电极板的正对面积A。For the capacitive structure 11 in the gate drive unit with certain design specification requirements, since the dielectric material used in the display panel is usually silicon nitride, silicon oxide and other materials, the value of the capacitance ratio ε is relatively fixed; and the electrode plate spacing It is difficult to further reduce the distance d. Therefore, for a display panel, it can be considered that the capacitance C of the above-mentioned capacitive structure 11 is proportional to the facing area A of the electrode plates.

因此,为了满足电路设计要求对于电容结构11的电容C的要求,需要电容结构11中的电极板具有相对较大面积的正对面积A,从而导致电容结构11所占据的区域面积较大。Therefore, in order to meet the requirements of circuit design for the capacitance C of the capacitor structure 11 , the electrode plate in the capacitor structure 11 needs to have a relatively large facing area A, resulting in a larger area occupied by the capacitor structure 11 .

基于此,在本发明实施例提供的上述阵列基板中,由于封装金属层12靠近驱动电路区域03的一侧上设置有至少一个凹槽结构120,且一个凹槽结构120用于容纳一个电容结构11,即凹槽结构120与电容结构11之间的位置关系为一一对应。因此,上述结构相当于将相对面积较大的电容结构11所占据的区域穿插进了封装区域02中,即沿图3中的横向方向上,封装区域02与驱动电路区域03以凹凸穿插的方式相互靠近。一并参考图3所示,相比于图1中所示的现有技术的边框宽度a,当显示区域01的尺寸不变,且不改变驱动电路中的电容结构的正对面积时,本发明实施例提供的上述阵列基板的边框宽度a'由于明显减小了电容结构11所占据的区域的宽度,而使得本发明实施例提供的上述阵列基板的边框宽度a'明显减小现有技术的边框宽度a。Based on this, in the above-mentioned array substrate provided by the embodiment of the present invention, at least one groove structure 120 is provided on the side of the packaging metal layer 12 close to the driving circuit area 03, and one groove structure 120 is used to accommodate a capacitor structure 11, that is, the positional relationship between the groove structure 120 and the capacitor structure 11 is a one-to-one correspondence. Therefore, the above structure is equivalent to inserting the area occupied by the capacitor structure 11 with a relatively large area into the packaging area 02, that is, along the lateral direction in FIG. approach each other. Referring to FIG. 3 together, compared with the frame width a of the prior art shown in FIG. 1 , when the size of the display area 01 remains unchanged and the area directly facing the capacitive structure in the driving circuit does not change, this The frame width a' of the above-mentioned array substrate provided by the embodiment of the present invention obviously reduces the width of the area occupied by the capacitive structure 11, so that the frame width a' of the above-mentioned array substrate provided by the embodiment of the present invention is significantly reduced in the prior art The border width a.

并且,由于凹槽结构120仅设置在封装金属层12靠近驱动电路区域03的一侧上,对封装金属层12为达到相应的封装效果所需的整体面积的影响很小,从而可在不影响封装效果的前提下明显减小现有技术的边框宽度。Moreover, since the groove structure 120 is only arranged on the side of the packaging metal layer 12 close to the driving circuit area 03, it has little influence on the overall area required for the packaging metal layer 12 to achieve the corresponding packaging effect, so that it can be used without affecting Under the premise of encapsulation effect, the frame width of the prior art is obviously reduced.

这样一来,对于具有同样尺寸的显示面板而言,由于本发明实施例提供的上述阵列基板可具有更小的边框宽度a',可以将显示区域01的面积制备的更大,从而使得显示区域01与非显示区域的比例更大,用户在观看图像显示时可获得更优的体验;并且,使得采用上述阵列基板的显示面板应用于拼接屏时,每一子屏间的拼缝更小,显示效果更优。In this way, for a display panel with the same size, since the array substrate provided by the embodiment of the present invention can have a smaller frame width a', the area of the display area 01 can be made larger, so that the display area The ratio of 01 to the non-display area is larger, and the user can obtain a better experience when viewing the image display; and, when the display panel using the above-mentioned array substrate is applied to the splicing screen, the splicing seam between each sub-screen is smaller, The display effect is better.

进一步的,如图4和图5所示,阵列基板还具体包括绝缘层13;沿垂直于所述阵列基板的板面方向(即图4、图5所示的剖视图),电容结构11包括相对设置且绝缘的第一电极111与第二电极112;绝缘层13至少位于第一电极111与第二电极112之间;封装金属层12与第一电极111或第二电极112同层设置。Further, as shown in FIG. 4 and FIG. 5, the array substrate specifically includes an insulating layer 13; along the direction perpendicular to the surface of the array substrate (that is, the cross-sectional view shown in FIG. 4 and FIG. 5), the capacitor structure 11 includes a relatively The first electrode 111 and the second electrode 112 are arranged and insulated; the insulating layer 13 is located at least between the first electrode 111 and the second electrode 112 ;

需要说明的是,第一、绝缘层13的作用是使第一电极111与第二电极112相互间隔开以形成上述的电容结构11。因此,绝缘层13应至少位于上述的两个电极之间。当然,考虑到简化阵列基板整体制备工艺,绝缘层13也可参考如图4或图5所示,还设置于封装区域02,具体不作限定。It should be noted that the function of the first and insulating layer 13 is to separate the first electrode 111 and the second electrode 112 from each other to form the above-mentioned capacitor structure 11 . Therefore, the insulating layer 13 should be located at least between the above two electrodes. Certainly, in consideration of simplifying the overall manufacturing process of the array substrate, the insulating layer 13 may also be disposed in the encapsulation area 02 as shown in FIG. 4 or FIG. 5 , which is not specifically limited.

第二、所谓“同层设置”,是针对至少两种图形而言的,是指将至少两种图形设置在同一层薄膜上的结构。具体的,可以是通过同一构图工艺在采用同种材料制成的一层薄膜上形成上述的至少两种图形。Second, the so-called "same-layer arrangement" refers to at least two kinds of graphics, and refers to a structure in which at least two kinds of graphics are arranged on the same layer of film. Specifically, the at least two patterns mentioned above can be formed on a film made of the same material through the same patterning process.

例如,参考图4所示,封装金属层12与电容结构11中的第一电极111一并设置在衬底基板100上;或者,参考图5所示,封装金属层12与电容结构11中的第二电极112一并设置在绝缘层13上。这样一来可以在制备封装金属层12时一并制备电容结构11中的一个电极板,从而提高了阵列基板的构图工艺的利用率,简化制备工艺。For example, as shown in FIG. 4, the packaging metal layer 12 and the first electrode 111 in the capacitor structure 11 are arranged on the base substrate 100 together; or, referring to FIG. 5, the packaging metal layer 12 and the capacitor structure 11 The second electrode 112 is also disposed on the insulating layer 13 . In this way, an electrode plate in the capacitor structure 11 can be prepared together when the packaging metal layer 12 is prepared, thereby improving the utilization rate of the patterning process of the array substrate and simplifying the preparation process.

进一步的,参考图4所示,驱动单元还包括至少一个薄膜晶体管(Thin Film Transistor,薄膜晶体管);第一电极111与薄膜晶体管的栅极金属层14同层设置;第二电极112与薄膜晶体管的源极和漏极金属层15同层设置。Further, as shown in FIG. 4 , the drive unit also includes at least one thin film transistor (Thin Film Transistor, thin film transistor); the first electrode 111 is arranged in the same layer as the gate metal layer 14 of the thin film transistor; the second electrode 112 and the thin film transistor The source and drain metal layers 15 are set in the same layer.

需要说明的是,栅极金属层14是指包括有薄膜晶体管的栅极的图案层;源极和漏极金属层15是指包括有薄膜晶体管的源极与漏极的图案层。It should be noted that the gate metal layer 14 refers to the pattern layer including the gate of the TFT; the source and drain metal layer 15 refers to the pattern layer including the source and drain of the TFT.

驱动单元中的TFT的数量不作限定,可以根据驱动电路的具体电路设计调整TFT的数量。当驱动单元中的TFT的数量为多个时,上述的栅极金属层14即指包括有所有TFT的栅极的图案层,源极和漏极金属层15指包括有所有TFT的源极与漏极的图案层。The number of TFTs in the driving unit is not limited, and the number of TFTs can be adjusted according to the specific circuit design of the driving circuit. When the number of TFTs in the drive unit is multiple, the above-mentioned gate metal layer 14 refers to the pattern layer including the gates of all TFTs, and the source and drain metal layer 15 refers to the source and drain electrodes including all TFTs. Drain pattern layer.

这样一来,当封装金属层12与第一电极111同层设置时,由于第一电极111还与栅极金属层14同层设置,因此可以在同一个构图工艺下制备上述的封装金属层12、第一电极111以及栅极金属层14,或者,在同一个构图工艺下制备上述的封装金属层12、第二电极112以及源极和漏极金属层15,从而进一步简化工艺过程,降低成本。In this way, when the encapsulation metal layer 12 and the first electrode 111 are arranged on the same layer, since the first electrode 111 is also arranged on the same layer as the gate metal layer 14, the above-mentioned encapsulation metal layer 12 can be prepared under the same patterning process. , the first electrode 111 and the gate metal layer 14, or prepare the above-mentioned packaging metal layer 12, the second electrode 112 and the source and drain metal layers 15 under the same patterning process, thereby further simplifying the process and reducing costs .

尽管本发明实施例中未示意出,但本领域技术人员还应理解,显示区域01中包括有呈矩阵排列的多个像素单元,每一像素单元中包括有TFT,第一电极111在与驱动单元的TFT中的栅极金属层14同层设置的同时,也可以与显示区域01的TFT的栅极金属层同层设置;当然,第二电极112在与驱动单元的TFT中的源极和漏极金属层15同层设置的同时,也可以与显示区域01的TFT的源极和漏极金属层同层设置,以进一步提高对构图工艺的利用率,简化制备工艺。Although not shown in the embodiment of the present invention, those skilled in the art should also understand that the display area 01 includes a plurality of pixel units arranged in a matrix, each pixel unit includes a TFT, and the first electrode 111 is connected with the driving While the gate metal layer 14 in the TFT of the unit is set on the same layer, it can also be set on the same layer as the gate metal layer of the TFT in the display area 01; of course, the second electrode 112 is in the same layer as the source and While the drain metal layer 15 is arranged on the same layer, it can also be arranged on the same layer as the source and drain metal layers of the TFT in the display area 01, so as to further improve the utilization rate of the patterning process and simplify the manufacturing process.

在此情况下,绝缘层13还可以延伸至显示区域01,具体可以为覆盖各个区域TFT的栅极金属层的栅绝缘层。In this case, the insulating layer 13 may also extend to the display region 01 , and specifically may be a gate insulating layer covering the gate metal layers of the TFTs in each region.

这里,图4中仅以相对于衬底基板100而言,第一电极111位于下方,第二电极112位于上方为例进行示例,第一电极111与第二电极112的相对位置可以等效对换,具体不作限定。Here, in FIG. 4, the first electrode 111 is located below and the second electrode 112 is located above the base substrate 100 as an example. The relative positions of the first electrode 111 and the second electrode 112 can be equivalent to Change, without limitation.

在上述基础上,考虑到目前在阵列基板上直接制版的驱动电路主要为栅极驱动电路,可取代传统的栅极驱动IC对栅线进行直接行扫描驱动,因此,本发明实施例进一步优选的,上述的驱动电路区域03包括栅极驱动电路区域,驱动单元包括位于该栅极驱动电路区域的栅极驱动单元。On the basis of the above, considering that the current driving circuit for direct plate-making on the array substrate is mainly a gate driving circuit, which can replace the traditional gate driving IC to directly scan and drive the gate lines, therefore, the embodiment of the present invention is further preferred , the above driving circuit area 03 includes a gate driving circuit area, and the driving unit includes a gate driving unit located in the gate driving circuit area.

进一步的,参考图2所示,当驱动电路区域03包括有栅极驱动电路区域时,栅极驱动电路区域优选地设置于显示区域01沿栅线方向的一侧或两侧,从而可以无需设置额外的用于连接栅极驱动电路与栅线的引线等电路结构,避免增加显示区域01外侧的非显示区域的面积。Further, as shown in FIG. 2, when the driving circuit region 03 includes a gate driving circuit region, the gate driving circuit region is preferably arranged on one or both sides of the display region 01 along the direction of the gate lines, so that there is no need to set Additional circuit structures such as lead wires for connecting the gate driving circuit and the gate lines avoid increasing the area of the non-display area outside the display area 01 .

进一步的,阵列基板还包括:位于封装金属层12上的封装胶。Further, the array substrate further includes: encapsulation glue on the encapsulation metal layer 12 .

这里,由于电容结构11穿插地位于封装金属层12的凹槽结构120处,在利用激光照射玻璃胶以使其熔融时,为了避免激光照射对电容结构11器件性能的影响,可以通过调节激光束的照射路径,使其激光仅照射到封装金属层12的部分,以避免由于激光照射可能对电容结构11造成的影响。Here, since the capacitive structure 11 is interspersed at the groove structure 120 of the package metal layer 12, when the glass glue is irradiated with laser to melt it, in order to avoid the influence of the laser irradiation on the device performance of the capacitive structure 11, the laser beam can be adjusted to The irradiation path is such that the laser only irradiates the part of the packaging metal layer 12, so as to avoid possible influence on the capacitive structure 11 due to the laser irradiation.

在上述基础上,本发明实施例还提供了一种显示面板,包括上述的阵列基板。On the basis of the above, an embodiment of the present invention further provides a display panel, including the above-mentioned array substrate.

进一步的,本发明实施例还提供了一种显示装置,包括上述的显示面板。Further, an embodiment of the present invention also provides a display device, including the above-mentioned display panel.

这里,上述的显示装置具体可以为液晶显示装置,如液晶电视、OLED电视或电子纸、数码相框、手机、平板电脑、显示器、笔记本电脑、导航仪等具有任何显示功能的产品或者部件。Here, the above-mentioned display device may specifically be a liquid crystal display device, such as liquid crystal TV, OLED TV or electronic paper, digital photo frame, mobile phone, tablet computer, monitor, notebook computer, navigator and other products or components with any display function.

需要说明的是,本发明所有附图是阵列基板的简略的示意图,只为清楚描述本方案体现了与发明点相关的结构,对于其他的与发明点无关的结构是现有结构,在附图中并未体现或只体现部分。It should be noted that all the drawings of the present invention are simple schematic diagrams of the array substrate, which are only for clearly describing the structure related to the invention, and other structures that are not related to the invention are existing structures. Not reflected or only partially reflected.

以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. Should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.

Claims (8)

1. an array base palte, is characterized in that, described array base palte has viewing area, packaging area and drive circuit area, and described drive circuit area is between described viewing area and described packaging area;
Described array base palte comprises: the package metals layer being arranged on described packaging area, and described package metals layer is provided with at least one groove structure on the side of described drive circuit area;
Be arranged at least one driver element of described drive circuit area, described driver element comprises capacitance structure; Wherein:
Described capacitance structure is arranged in described groove structure, and a described groove structure is for holding a described capacitance structure.
2. array base palte according to claim 1, is characterized in that, described array base palte also comprises insulation course;
Along the direction, plate face perpendicular to described array base palte, described capacitance structure comprises: be oppositely arranged and the first electrode insulated and the second electrode; Described insulation course is at least between described first electrode and described second electrode;
Described package metals layer and described first electrode or described second electrode are arranged with layer.
3. array base palte according to claim 2, is characterized in that, described driver element also comprises: at least one thin film transistor (TFT);
The gate metal layer of described first electrode and described thin film transistor (TFT) is arranged with layer; Source electrode and the drain metal layer of described second electrode and described thin film transistor (TFT) are arranged with layer.
4. the array base palte according to any one of claims 1 to 3, is characterized in that,
Described drive circuit area comprises gate driving circuit region; Described driver element comprises the drive element of the grid being positioned at described gate driving circuit region.
5. the array base palte according to any one of claim 4, is characterized in that, described gate driving circuit region is positioned at the one or both sides of described viewing area along grid line direction.
6. the array base palte according to any one of claims 1 to 3, is characterized in that, described array base palte also comprises: be positioned at the packaging plastic on described package metals layer.
7. a display panel, is characterized in that, comprises the array base palte as described in any one of claim 1 to 6.
8. a display device, is characterized in that, comprises display panel as claimed in claim 7.
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