CN103163699B - For capacitor and the liquid crystal display of non-crystalline silicon grid drive circuit - Google Patents
For capacitor and the liquid crystal display of non-crystalline silicon grid drive circuit Download PDFInfo
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- CN103163699B CN103163699B CN201110407633.0A CN201110407633A CN103163699B CN 103163699 B CN103163699 B CN 103163699B CN 201110407633 A CN201110407633 A CN 201110407633A CN 103163699 B CN103163699 B CN 103163699B
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- capacitor
- electrode layer
- crystalline silicon
- drive circuit
- grid drive
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- 239000003990 capacitor Substances 0.000 title claims abstract description 89
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 32
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000003292 glue Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000408495 Iton Species 0.000 description 1
- 241000733322 Platea Species 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
The invention provides a kind of capacitor and liquid crystal display that drives (ASG) circuit for non-crystalline silicon grid, in the upper bottom crown of the first capacitor of making, at least one is transparent electrode layer, utilize the light transmission of transparent electrode layer, improve non-crystalline silicon grid driving circuit section frame glue transmitance, reduce to shield border width, thereby improved the performance of liquid crystal display device; Further the first pole plate using a battery lead plate of the first capacitor as the second capacitor, with described the first capacitor of connecting, further increases capacitance, to improve the performance of liquid crystal display device; In the time at least one hole being set in the metal electrode layer of the first capacitor and the second capacitor, can utilize the edge effect of hole, further increase capacitance, to improve the performance of liquid crystal display device.
Description
Technical field
The present invention relates to Thin Film Transistor-LCD technical field, relate in particular to a kind of for amorphous silicon gate couldThe capacitor of utmost point drive circuit and liquid crystal display.
Background technology
TFT-LCD (Thin Film Transistor-LCD, Thinfilmtransistorliquidcrystaldisplay)Being the one of liquid crystal display, because it has many merits, is unique demonstration skill of crossing over all sizesArt, application is very extensive, as TV, notebook computer, monitor, mobile phone etc. TFT-LCD'sBasic structure is two sheet glass substrate sandwich one deck liquid crystal layers, mainly by polaroid, glass substrate, public affairsThe formations such as common electrode, pixel electrode, control IC, chromatic photoresist. Conventionally the substrate with chromatic photoresist is claimedFor color film (CF) substrate, the substrate of having made tft array is called array (array) substrate. Backlight moduleBe positioned under LCD panel as light source.
TFT plays a part transmission and controls the signal of telecommunication in LCD, is determined and is applied to liquid crystal layer by itOn the size of voltage. When applying voltage to liquid crystal panel, liquid crystal molecule starts to rotate, and light is through polarisationAfter sheet and liquid crystal layer, just can form certain picture.
At present, the tft active matrix of TFT-LCD drives, and mainly contains two kinds: a-Si (amorphoussilicon,Non-crystalline silicon) tft active matrix and p-Si (polysilicon, polysilicon) tft active matrix. At a-SiTFTIn active matrix technology, conventionally utilize existing production line a-Si technique, directly amorphous silicon gate could Ghandler motion position is postedStorage is integrated in and on glass substrate, makes non-crystalline silicon grid drive circuit (ASG, AmorphousSiliconGateDriver), substitute original silicon wafer grid drive chip (GatedriverIC), so that display screen becomes moreGently, and can increase the reliability of display, reduce costs.
As shown in Figure 1A, when ASG circuit practical layout, generally can exist capacitor element to carry out improvement threshold electricityPress the problems such as skew, improve the display performance of liquid crystal display. As shown in Figure 1B and 1C, general by numberAccording to line metallic pattern (S/Dlayer) 102 and gate metal figure (gatelayer) 101 and middle existenceInsulating barrier 104 is made capacitor element, but because ASG circuit is often placed in frame glue downside, for the sclerosis of frame glueConsider, in the middle of this capacitor element is designed to, have metal hole figure 103 so that frame glue hardens, but thisTend to cause ASG circuit area occupied to expand.
Summary of the invention
The object of the present invention is to provide a kind of capacitor and liquid crystal display for non-crystalline silicon grid drive circuitDevice, improves ASG frame segment glue transmitance, reduces to shield border width, improves the performance of liquid crystal display device.
For addressing the above problem, the invention provides a kind of capacitor for non-crystalline silicon grid drive circuit, bagDraw together the first capacitor that is made in non-crystalline silicon grid drive circuit area, the upper bottom crown of described the first capacitorIn have one at least for transparent electrode layer.
Further, described bottom crown is pixel electrode layer, and described top crown is surperficial transparent electrode layer.
Further, described bottom crown is pixel electrode layer, and described top crown is surface metal electrode layer.
Further, in described surface metal electrode layer, be provided with at least one hole.
Further, described bottom crown is metal electrode layer, and described top crown is pixel electrode layer.
Further, in described metal electrode layer, be provided with at least one hole.
Further, described bottom crown is gate metal layer or data wire metal layer, and described top crown is pixelElectrode layer.
Further, on described gate metal layer or data wire metal layer, be provided with at least one hole.
Further, the described capacitor for non-crystalline silicon grid drive circuit also comprises and is made in amorphous silicon gate couldUtmost point drive circuit area and with the second capacitor of described the first capacitor's series, described the second capacitor is positioned atAbove or below described the first capacitor, its first pole plate is one in bottom crown on described the first capacitorIndividual, the second pole plate is metal electrode layer or transparent electrode layer.
Further, when the second pole plate of described the second capacitor is metal electrode layer, on described the second pole plateBe provided with at least one hole.
Compared with prior art, capacitor and liquid crystal for non-crystalline silicon grid drive circuit provided by the inventionDisplay, in the upper bottom crown of the first capacitor of making, at least one is transparent electrode layer, utilizesThe light transmission of transparent electrode layer, improves non-crystalline silicon grid driving circuit section frame glue transmitance, reduces to shield frameWidth, thus the performance of liquid crystal display device improved;
Further, the first pole plate using a battery lead plate of the first capacitor as the second capacitor, to go here and thereJoin described the first capacitor, further increase capacitance, to improve the performance of liquid crystal display device;
Further, in the metal electrode layer of the first capacitor and the second capacitor, be provided with at least one holeHole, utilizes the edge effect of hole, further increases capacitance, to improve the property of liquid crystal display deviceEnergy.
Brief description of the drawings
Figure 1A is a kind of ASG circuit theory diagrams of prior art;
Figure 1B is the plane of the capacitor of the ASG circuit of prior art;
Fig. 1 C is the cross-sectional view of the capacitor of the ASG circuit of Figure 1B;
Fig. 2 A is the plane of the capacitor for ASG circuit of the embodiment of the present invention one;
Fig. 2 B is the cross-sectional view of the capacitor for ASG circuit of the embodiment of the present invention one;
Fig. 3 A is the plane of the capacitor for ASG circuit of the embodiment of the present invention two;
Fig. 3 B is the cross-sectional view of the capacitor for ASG circuit of the embodiment of the present invention two.
Detailed description of the invention
The capacitor for ASG circuit and the liquid crystal that the present invention are proposed below in conjunction with the drawings and specific embodimentsDisplay is described in further detail.
Embodiment mono-
As shown in Figure 2 A and 2B, the present embodiment provides a kind of capacitor for ASG circuit, comprises makingThe first capacitor 20 in the substrate 200 of non-crystalline silicon grid drive circuit area. In the present embodiment, described inThe bottom crown 201 of the first capacitor is that transparent pixels electrode layer, top crown 202 are positioned at described transparent pixels electricityUtmost point layer 201 top, are surperficial transparent electrode layer, the first insulation in the middle of top crown 202 and bottom crown 201Layer 203 is as storage medium. Described the first insulating barrier 203 can be passivation layer, described transparent pixels electrodeThe material of layer 201 is tin indium oxide (ITO) or indium zinc oxide (IZO), described surperficial transparent electrode layerMaterial is tin indium oxide or indium zinc oxide.
The capacitor for ASG circuit of the present embodiment, utilizes transparent pixels electrode layer 201 and surface transparentThe light transmission of electrode layer 202, improves ASG frame segment glue transmitance, meets consolidating of ASG bottom sealed plastic boxChange condition, and then reduced ASG circuit area occupied, reduce to shield border width, improve liquid crystal displayThe performance of part.
In other embodiments of the invention, in the upper bottom crown of described the first capacitor 20, has a utmost point at leastPlate is transparent electrode layer. When a pole plate in the upper bottom crown of described the first capacitor 20 is transparency electrodeLayer when another pole plate is metal electrode layer, is provided with at least in the metal electrode layer of described another pole plateA hole. The for example bottom crown of the first capacitor 20 is pixel electrode layer, and described top crown is surface metalElectrode layer is provided with at least one hole in described surface metal electrode layer; Or described bottom crown isMetal electrode layer, this metal electrode layer be in the substrate 200 of non-crystalline silicon grid drive circuit area except gridMetal level beyond metal level and data metal layer, described top crown is pixel electrode layer, described metal electrodeIn layer, be provided with at least one hole; Or described bottom crown is gate metal layer or data wire metalLayer, described top crown is pixel electrode layer, on described gate metal layer or data wire metal layer, be provided with toA few hole.
These embodiment all utilize the edge effect of hole, and the capacitance of the first capacitor is increased, and improveThe performance of liquid crystal display device; Utilize the printing opacity effect of hole and transparent electrode layer simultaneously, improve ASG partFrame glue transmitance, meets the condition of cure of ASG circuit bottom sealed plastic box, and then has reduced ASG circuit and account forWith area, reduce to shield border width.
Embodiment bis-
As shown in Fig. 3 A and 3B, the present embodiment provides a kind of capacitor for ASG circuit, is made in non-In the substrate 200 of polysilicon gate drive circuit area, comprise the second electricity of the first capacitor 20 and series connection with itContainer 30. Described the first capacitor 20 comprises: as the transparent pixels electrode layer 201 of bottom crown, be positioned at instituteState transparent pixels electrode layer 201 tops surperficial transparent electrode layer 202 and conduct storage as top crownFirst insulating barrier that is positioned at described transparent pixels electrode layer 201 and surperficial transparent electrode layer 202 centres of medium203. Described the second capacitor 30 comprises: as the transparent pixels electrode layer 201 of top crown, be positioned at describedBright pixel electrode layer 202 belows and as the gate metal layer 301 of bottom crown and as storage medium positionThe second insulating barrier 302 in the middle of described gate metal layer 301 and transparent pixels electrode layer 201. Described firstInsulating barrier 203 can be passivation layer, and the material of described transparent pixels electrode layer 201 is tin indium oxide (ITO)Or indium zinc oxide (IZO), the material of described surperficial transparent electrode layer is tin indium oxide or indium zinc oxide, described inThe second insulating barrier 302 is gate insulation layer and/or passivation layer.
In the present embodiment, equally distributed multiple hole can also be set in described gate metal layer 301303, utilize the edge effect of hole 303, make the capacitance of the first capacitor 20 and the second capacitor 30All increased, can be improved the performance of liquid crystal display device. Can also utilize simultaneously hole 303 and thoroughlyThe printing opacity effect of bright pixel electrode layer 201, surperficial transparent electrode layer 202, improves ASG frame segment glue and sees throughRate, meets the condition of cure of ASG circuit bottom sealed plastic box, and then has reduced ASG circuit area occupied,Reduce to shield border width.
In other embodiments of the invention, the first pole plate of described the second capacitor is described the first capacitorIn upper bottom crown one, the second pole plate is metal electrode layer or transparent electrode layer. The second capacitor can positionIn below or the top of the first capacitor. In the time that the second pole plate of described the second capacitor is metal electrode layer,On described the second pole plate, be provided with at least one hole, if exist not saturating in the upper bottom crown of the first capacitor 20Bright pole plate, also arranges at least one hole thereon, with by the edge effect of hole 303, makes theThe capacitance of one capacitor 20 and/or the second capacitor 30 is increased.
Embodiment tri-
Accordingly, the present embodiment provides a kind of liquid crystal display, comprises viewing area and ASG circuit region,Described ASG circuit region comprises the first capacitor, in the upper bottom crown of described the first capacitor, has one at leastPole plate is transparent electrode layer.
Preferably, described ASG circuit region also comprises the second capacitor with described the first capacitor's series,The first pole plate of described the second capacitor is in bottom crown on described the first capacitor, and the second pole plate isMetal electrode layer or transparent electrode layer; In the time that the second pole plate of described the second capacitor is metal electrode layer, instituteState on the second pole plate and be provided with at least one hole, opaque when existing in the upper bottom crown of the first capacitorWhen pole plate, at least one hole is set on this pole plate. By the edge effect of hole, make the first electric capacityThe capacitance of device and/or the second capacitor is increased.
In sum, capacitor and liquid crystal display for non-crystalline silicon grid drive circuit provided by the inventionDevice, in the upper bottom crown of the first capacitor of making, at least one is transparent electrode layer, utilizes transparentThe light transmission of electrode layer, improves non-crystalline silicon grid driving circuit section frame glue transmitance, reduces to shield frame wideDegree, thus the performance of liquid crystal display device improved; Further using a battery lead plate of the first capacitor asThe first pole plate of the second capacitor, with described the first capacitor of connecting, further increases capacitance, to carryThe performance of high liquid crystal display device; When arranging extremely in the metal electrode layer of the first capacitor and the second capacitorWhen a few hole, can utilize the edge effect of hole, further increase capacitance, to improve liquid crystalShow the performance of device.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the present invention inventionSpirit and scope. Like this, if of the present invention these amendment and modification belong to the claims in the present invention andWithin the scope of equivalent technologies, the present invention be also intended to comprise these change and modification interior.
Claims (11)
1. for a capacitor for non-crystalline silicon grid drive circuit, it is characterized in that, comprise and be made in amorphousThe first capacitor of silicon gate drive circuit area, has one at least in the upper bottom crown of described the first capacitorPole plate is transparent electrode layer; Wherein, described non-crystalline silicon grid drive circuit is placed in the downside of the frame glue of display.
2. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 1, is characterized in that,Described bottom crown is pixel electrode layer, and described top crown is surperficial transparent electrode layer.
3. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 1, is characterized in that,Described bottom crown is pixel electrode layer, and described top crown is surface metal electrode layer.
4. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 3, is characterized in that,In described surface metal electrode layer, be provided with at least one hole.
5. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 1, is characterized in that,Described bottom crown is metal electrode layer, and described top crown is pixel electrode layer.
6. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 5, is characterized in that,In described metal electrode layer, be provided with at least one hole.
7. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 1, is characterized in that,Described bottom crown is gate metal layer or data wire metal layer, and described top crown is pixel electrode layer.
8. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 7, is characterized in that,On described gate metal layer or data wire metal layer, be provided with at least one hole.
9. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 1, is characterized in that,The described capacitor for non-crystalline silicon grid drive circuit also comprises and is made in non-crystalline silicon grid drive circuit areaAnd with the second capacitor of described the first capacitor's series, described the second capacitor is positioned at described the first capacitorAbove or below, its first pole plate is in bottom crown on described the first capacitor, the second pole plate isMetal electrode layer or transparent electrode layer.
10. the capacitor for non-crystalline silicon grid drive circuit as claimed in claim 9, is characterized in that,When the second pole plate of described the second capacitor is metal electrode layer, on described the second pole plate, be provided with at least oneHole.
11. 1 kinds of liquid crystal displays, comprise viewing area and non-crystalline silicon grid drive circuit area, its featureBe, described non-crystalline silicon grid drive circuit area comprise in claim 1 to 10 described in any one forThe capacitor of non-crystalline silicon grid drive circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110407633.0A CN103163699B (en) | 2011-12-08 | 2011-12-08 | For capacitor and the liquid crystal display of non-crystalline silicon grid drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110407633.0A CN103163699B (en) | 2011-12-08 | 2011-12-08 | For capacitor and the liquid crystal display of non-crystalline silicon grid drive circuit |
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| Publication Number | Publication Date |
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| CN103163699A CN103163699A (en) | 2013-06-19 |
| CN103163699B true CN103163699B (en) | 2016-05-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018139450A1 (en) * | 2017-01-27 | 2018-08-02 | シャープ株式会社 | Active matrix substrate and display device using same |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943660B (en) | 2014-04-02 | 2017-10-27 | 上海中航光电子有限公司 | A kind of display device |
| CN103941507B (en) | 2014-04-02 | 2017-01-11 | 上海天马微电子有限公司 | Array substrate, display panel and display device |
| US9766517B2 (en) | 2014-09-05 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and display module |
| CN104297970B (en) * | 2014-10-29 | 2017-03-08 | 京东方科技集团股份有限公司 | GOA unit, array base palte, display device and manufacture method |
| CN105954912A (en) * | 2016-07-19 | 2016-09-21 | 武汉华星光电技术有限公司 | Array substrate row driving circuit and liquid crystal display panel |
| JP7159031B2 (en) * | 2018-12-18 | 2022-10-24 | 株式会社ジャパンディスプレイ | Display device |
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| CN1301976A (en) * | 1999-12-24 | 2001-07-04 | 精工爱普生株式会社 | Liquid crystal device for its producing method |
| CN1727972A (en) * | 2004-07-27 | 2006-02-01 | 三星电子株式会社 | Thin-film transistor display panel and comprise its display device |
| CN1752823A (en) * | 2004-09-24 | 2006-03-29 | 三星电子株式会社 | Display device with improved sealing and method of manufacturing the same |
| CN101762911A (en) * | 2008-12-24 | 2010-06-30 | 乐金显示有限公司 | Liquid crystal display device and method for manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007093849A (en) * | 2005-09-28 | 2007-04-12 | Sanyo Epson Imaging Devices Corp | Liquid crystal device and electronic equipment |
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Patent Citations (4)
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|---|---|---|---|---|
| CN1301976A (en) * | 1999-12-24 | 2001-07-04 | 精工爱普生株式会社 | Liquid crystal device for its producing method |
| CN1727972A (en) * | 2004-07-27 | 2006-02-01 | 三星电子株式会社 | Thin-film transistor display panel and comprise its display device |
| CN1752823A (en) * | 2004-09-24 | 2006-03-29 | 三星电子株式会社 | Display device with improved sealing and method of manufacturing the same |
| CN101762911A (en) * | 2008-12-24 | 2010-06-30 | 乐金显示有限公司 | Liquid crystal display device and method for manufacturing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2018139450A1 (en) * | 2017-01-27 | 2018-08-02 | シャープ株式会社 | Active matrix substrate and display device using same |
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| CN103163699A (en) | 2013-06-19 |
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