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CN104716051B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN104716051B
CN104716051B CN201410444315.5A CN201410444315A CN104716051B CN 104716051 B CN104716051 B CN 104716051B CN 201410444315 A CN201410444315 A CN 201410444315A CN 104716051 B CN104716051 B CN 104716051B
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semiconductor device
semiconductor
resin
wiring board
manufacture method
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CN104716051A (zh
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渡部武志
井本孝志
高野勇佑
本间庄
本间庄一
涩谷克则
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Kioxia Corp
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Toshiba Memory Corp
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Abstract

本发明提供一种具备对于树脂密封面具有良好的密接性的半导体装置的制造方法。将多个半导体元件搭载于配线基板。使用密封树脂将配线基板的搭载着半导体元件的面与多个半导体元件密封。切断被密封的配线基板，分离成各个半导体装置。加热分离后的半导体装置。于加热后的半导体装置的密封树脂表面与配线基板的切断面，通过金属溅镀形成屏蔽层。

Description

半导体装置的制造方法
[相关申请案]
本申请案享有将日本专利申请案2013-258660号(申请日：2013年12月13日)作为基础申请案的优先权。本申请案通过参照该基础申请案而包含基础申请案的全部内容。
技术领域
本发明的实施方式涉及一种半导体装置的制造方法。
背景技术
近年来，在手机等可携式无线通信设备中，避免从内置的各种电子零件发出的电磁噪音干扰无线系统成为较大的问题。因此，研究对作为噪音源的电子零件本身实施屏蔽对策，作为其一，开发出在树脂密封的半导体封装体的表面设置使用金属膜的屏蔽层的技术。此时，对屏蔽层要求相对于树脂密封面的良好的密接性。
发明内容
本发明提供一种具备相对于树脂密封面的良好的密接性的半导体装置的制造方法。
本发明的实施方式是使用密封树脂将搭载着多个半导体元件的配线基板的搭载着半导体元件的面与半导体元件密封。切断被密封的配线基板而分离成各个半导体装置，加热分离后的半导体装置。在加热后的半导体装置的密封树脂表面与配线基板的切断面，通过金属溅镀形成屏蔽层。
附图说明
图1是表示一实施方式的半导体装置的构造的剖视图。
图2是表示一实施方式的半导体装置的制造步骤的流程图。
图3是表示一实施方式的半导体装置的烘烤步骤中的氧化膜的成长的图。
图4是表示一实施方式的半导体装置的构造的仰视图。
具体实施方式
以下，参照附图说明实施方式。此外，实施方式的说明与表示附图中的上下左右等方向的说明表示将半导体装置的设置外部端子的面设为下的情况下的相对方向，存在与将重力加速度方向设为下的情况下的方向不同的情况。另外，为方便说明，附图中的纵横比存在以与实际的纵横比不同的纵横比图示的情况。
图1是表示一实施方式的半导体装置的构造的剖视图。
图1所示的半导体装置10是所谓区域阵列型的半导体装置。多个半导体元件1a、1b、1c、…多段地积层于配线基板2上。此外，于附图的例中，半导体元件的积层数为8、即积层有8段，但半导体元件的积层数并无特别限定，例如也可以为1层(单一的半导体元件)、2层、5层、16层、32层等。半导体元件例如可以使用NAND(NOTAND，与非)型闪速存储器。此外，在图1中图示NAND型闪速存储器1a、1b、1c、…1h及NAND控制器(无符号)，图1所示的半导体装置10具有作为SSD(Solid State Disk，固态磁盘)等存储装置的功能。
多个半导体元件1a、1b、1c、…均使用硅基板等半导体基板。另一方面，配线基板2是使用将例如树脂基板、陶瓷基板、玻璃基板等绝缘基板用作基材的多层配线基板。作为应用树脂基板的配线基板2，可列举一般的多层覆铜积层板(多层印刷配线板)等。可以使用包括配线层的数量为多层、即2层以上(例如2层、3层或4层)的配线层的多层覆铜积层板。此外，在图1中例示了使用包括3层的配线层的3层覆铜积层板的示例。在配线基板2的下表面侧设置着用来与外部连接的电极焊垫，在该电极焊垫上设置着焊料凸点等外部电极3。
外部电极3是在配线基板2的下表面侧呈格子(栅格阵列)状排列。在图1中例示了使用焊料凸点等突起电极作为外部电极3的示例，但也可以在电极焊垫将使用镀敷等形成的电极膜用作外部电极3。
另外，在配线基板2的上表面侧设置着包含信号图案及接地图案的表面配线层2a，各半导体元件1a、1b、1c、…分别经由信号线金属线4及接地金属线5而连接于这些信号图案及接地图案。进而，在配线基板2的内部设置着包含信号图案及接地图案的表面配线层2a与连接于外部电极3侧的电极焊垫的内层配线层2b。此处，使内层配线层2b中与屏蔽层电性连接的图案(例如接地图案)在配线基板2的侧面露出。或者，使表面配线层2a中与屏蔽层电性连接的图案在配线基板2的侧面露出。
这样，在搭载着多个半导体元件1a、1b、1c、…的配线基板2的上表面，以包覆半导体元件1a、1b、1c、…、或设置于配线基板2上表面的表面配线层2a、连接半导体元件1a、1b、1c、…与表面配线层2a的信号线金属线4及接地金属线5的方式将铸模树脂6铸模。该铸模树脂6是密封半导体元件1a、1b、1c、…或表面配线层2a、信号线金属线4及接地金属线5等而形成绝缘层，例如使用含有二氧化硅等填料的环氧树脂等。
在铸模树脂6的上表面，通过照射激光，刻印制品编号、制造年周、制造工厂等制品信息。此处，图1中，7表示通过利用激光照射的刻印形成的标记部。进而，在该刻印的铸模树脂6的表面整体、即上表面及侧面、进而在接于铸模树脂6的侧面的配线基板2的侧面，形成使用金属溅镀的屏蔽层8。屏蔽层8是主要用来屏蔽半导体元件1a、1b、1c、…发出的电磁噪音者。因此，与设置于配线基板2的内层配线层2b的图案(例如接地图案)的在配线基板2的侧面露出的部分电性连接，由此确保屏蔽性。
形成屏蔽层8的金属材料并无特别限定，例如使用含有Cu、Ni、Cr或B、Co或W的Ni合金等。另外，屏蔽层8可以为单层，也可以为具有复数层(例如从铸模树脂6侧起为Cu/Ni或Cu/SUS合金)的积层构造。
进而，该屏蔽层8的厚度并无特别限定，但为了半导体装置10的小型化、薄型化，优选尽可能地变薄。通过使屏蔽层8的厚度变薄，可以提高标记部7的视认性。即，如果使屏蔽层8的厚度变厚，则利用激光照射的刻印的深度变小，视认性降低。通过使屏蔽层8的厚度变薄，可以防止该视认性的降低。但，如果过薄，则有屏蔽层8的机械强度降低、视情况其一部分剥离等屏蔽性降低的担忧。就此种观点来说，屏蔽层8优选0.1～8μm的范围。
在本实施方式中，标记部7的刻印深度约30μm，屏蔽层8是使用从铸模树脂6面侧起为0.1～6.0μm厚的Cu层与0.1～1.5μm的SUS层的双层构造。通过使铸模树脂6面侧为Cu层，可以抑制与电性连接于屏蔽层的图案剖面的连接电阻。通过在该Cu层进而设置SUS层，屏蔽层8的耐腐蚀性提高，并且可以提高标记部7的视认性。
此外，关于利用激光的标记，YAG(Yttrium Aluminium Garnet，钇铝石榴石)激光或YVO4(钒酸钇)激光等因点径较小且可形成约30μm左右的深度的刻印而优选。在本实施方式中，使用点径0.1mm的YAG激光。
在本实施方式的半导体装置中，在通过激光照射形成着标记部7的铸模树脂6的表面形成着利用金属溅镀形成的屏蔽层8，因此可以抑制装置的大型化、高背化，并且可以具备标记部7的优异的视认性与可靠性较高的屏蔽性能。
接下来，使用图2所示的流程图说明该实施方式的半导体装置10的制造方法的一例。
如图2所示，步骤主要包括如下8个步骤：制造集合基板的步骤(101)、搭载半导体元件的步骤(102)、通过铸模树脂进行密封的步骤(103)、分离成各个半导体装置的步骤(104)、通过激光照射施加标记的步骤(105)、进行烘烤的步骤(106)、通过金属溅镀形成屏蔽层的步骤(107)、以及确认与屏蔽层电性连接的图案及屏蔽层的电阻值的步骤(108)。
首先，在集合基板的制造步骤(101)中，制作多个配线基板2呈矩阵状连接设置而成的构造的集合基板。
继而，在半导体元件搭载步骤(102)中，在所述各配线基板的上表面依序积层半导体元件1a、1b、1c、…，并且经由信号线金属线4及接地金属线5连接设置于配线基板2的信号图案及接地图案与各半导体元件1a、1b、1c、…。
继而，在利用铸模树脂的密封步骤(103)中，在搭载着半导体元件1a、1b、1c、…的集合基板的上表面侧，将铸模树脂6、例如环氧树脂一次铸模，密封半导体元件1a、1b、1c、…。铸模树脂6的铸模可以使用转注成形法、压缩成形法、射出成形法等成形法。
继而，在分离步骤(104)中，为了制作各个半导体装置10，将铸模树脂6与集合基板一并切断，分离成多个搭载着半导体元件1a、1b、1c、…的配线基板2。切断时可以使用钻石刀片等刀片。此外，切断时，将溶解有二氧化碳的纯水供给至刀片与铸模树脂6或集合基板的接触部分。其目的在于：冷却刀片与铸模树脂6或集合基板、或抑制切断时产生的灰尘的飞散、减轻切断时产生的带电。
继而，在标记步骤(105)中，通过包括YAG激光等的激光标记装置，在配线基板2上的铸模树脂6的上表面刻印制品名、制品编号、制造年月日、制造工厂等制品信息。就获得良好的视认性及作业性的观点来说，刻印的深度优选20～40μm左右，更优选25～35μm左右，进而优选设为大致30μm。
继而，在烘烤步骤(106)中，加热(烘烤)各个半导体装置10。在分离步骤中，由于各个半导体装置10浸渍于纯水中，所以存在铸模树脂6或配线基板2成为吸湿的状态的情况。若在铸模树脂6或配线基板2为吸湿的状态下直接实施金属溅镀，在金属溅镀膜与铸模树脂6间或金属溅镀膜与配线基板2间的任一个中，存在产生剥离的情况。为了抑制该剥离，在实施金属溅镀前，在水的沸点以上的条件下将各个半导体装置10放置特定时间，使铸模树脂6或配线基板2的吸湿率降低。
此时，在配线基板2的侧面，与在分离步骤(104)中被切断的屏蔽层电性连接的图案剖面露出。在烘烤步骤(106)中，如果在水的沸点以上的条件(例如1气压100℃以上)下将各个半导体装置10放置特定时间，则因放置环境，存在图案剖面氧化与屏蔽层电性连接的图案和屏蔽层8之间的电阻值变高的情况。
因此，为了抑制图案剖面的氧化，烘烤步骤(106)是在氧浓度低于大气氧浓度的环境中放置各个半导体装置10。例如，一面使用惰性气体(N2或CO2等)冲洗炉内一面使用可加热的恒温槽(Anaerobic Temperature Oven)加热放置各个半导体装置10。
具体来说，低于大气氧浓度的氧浓度优选将炉内的氧浓度设为1.0％以下。就谋求的屏蔽性能来说，与屏蔽层8电性连接的图案剖面的氧化膜厚度必须抑制为小于50nm。
此处，图3是表示一实施方式的半导体装置的烘烤步骤中的氧化膜的成长的图。横轴表示在设置为目标温度250℃的恒温槽内放置半导体装置10的时间，纵轴表示铜的露出面的氧化膜的膜厚，各曲线表示各个氧浓度下的氧化膜的成长。如图3所示，如果将炉内的氧浓度设为1.0％以下，则烘烤时间超过200sec时，氧化膜的成长几乎未进展。由此，优选将炉内的氧浓度设为1.0％以下。此处，如果在超过温度250℃的温度下进行烘烤，则因铸模树脂6中包含环氧树脂或酚树脂，所以超过铸模树脂6的玻璃转移点。以像在超过铸模树脂6的玻璃转移点温度的温度下使吸水率降低的程度那样较长的时间进行烘烤并不现实，因此烘烤是在250℃以下下进行。
继而，在利用金属溅镀的屏蔽层形成步骤(107)中，对激光标记的铸模树脂6的表面整体、即对上表面及侧面整体实施金属溅镀，例如形成3μm厚的屏蔽层8。由此，制作如图1所示的半导体装置10。
此外，当实施金属溅镀时，为了提高屏蔽层8对铸模树脂6的密接性，优选预先将铸模树脂6的表面、至少上表面粗化。本方法中，为了获取多个半导体装置，切断一次密封的铸模树脂。因此，由于铸模树脂6的侧面通过切断已被粗化，所以基本上无需进行粗化，但也可以视需要进而追加粗化步骤。作为粗化方法，可以使用反溅镀。通过使用反溅镀，无需重新准备用来进行粗化的装置。另外，由于可以使用与金属溅镀相同的腔室连续地进行处理，所以可谋求步骤的简化、步骤期间的缩短，因此优选。
然后，在测试步骤(108)中，测定与制成的半导体装置10的屏蔽层8电性连接的图案及屏蔽层的电阻值。在测试步骤(108)中，确认屏蔽层8的屏蔽性能未产生问题。
图4中表示半导体装置10的仰视图(从外部电极3侧观察的图)。外部电极3包含测定用的外部电极3a及通常的外部电极3b。测定用的外部电极3a连接于与屏蔽层8电性连接的图案。另外，通常的外部电极3b的一部分也连接于与屏蔽层8电性连接的图案。但，测定用的外部电极3a与通常的外部电极3b并非仅经由与屏蔽层8电性连接的图案而电性连接，而是经由与屏蔽层8电性连接的图案及屏蔽层8的两者而电性连接。
在测试步骤(108)中，测定测定用的外部电极3a和连接于与屏蔽层8电性连接的图案的一部分的通常的外部电极3b之间的电阻。
此外，在本实施方式中，测定用的外部电极3a是使用所述电极膜，通常的外部电极3b是使用突起电极。
根据以上所说明的半导体装置的制造方法，通过金属溅镀形成屏蔽层，因此可以形成厚度非常薄的屏蔽层，可以使半导体装置小型化、薄型化。
而且，在分离成各个半导体封装体后，在金属溅镀前加热半导体装置10。由此，可以抑制金属溅镀的剥离，可以效率良好地制造半导体装置。此处，金属溅镀前的半导体装置10的加热是在氧浓度大气氧浓度的环境中进行。由此，可以抑制与屏蔽层8电性连接的图案的露出面的氧化。结果，可以将与屏蔽层8电性连接的图案和屏蔽层8之间的电阻抑制为较低。
进而，通过激光在铸模树脂的表面标记制品信息等后，形成屏蔽层。由此，可以具有可靠性较高的屏蔽性能，并且可以形成具有充分的视认性的标记部。即，于在形成屏蔽层后进行激光标记的情况下，有产生因激光所致的屏蔽层的贯通，屏蔽降低的担忧。另外，在未贯通的情况下，刻印较浅，无法获得充分的视认性。在所述半导体装置的制造方法中，在激光标记后形成屏蔽层，因此无屏蔽层贯通的担忧，可以形成具有充分的深度的刻印。因此，可以具有可靠性较高的屏蔽性能，且可以形成具有充分的视认性的标记部。
进而，于在金属溅镀后进行激光标记的情况下，由于金属一般激光反射率较大，所以必须使激光输出变大，激光材料的消耗变快，必须频繁更换，但在所述方法中，由于对激光光的吸收良好的铸模树脂进行标记，所以激光输出可较低，无需频繁更换，可以谋求制造成本的降低、作业效率的提高。
以上说明了本发明的实施方式，但该实施方式是作为示例而提出的，并非意图限定发明的范围。该新颖的实施方式可以通过其他各种方式而实施，可以在不脱离发明的主旨的范围内进行各种省略、替换、变更。该实施方式或其变化包含于发明的范围或主旨，并且包含于权利要求书中记载的发明及其均等的范围。
[符号的说明]
1 半导体元件
2 配线基板
3 外部电极
4 信号线金属线
5 接地金属线
6 铸模树脂
7 标记部
8 屏蔽层
10 半导体装置

Claims (5)

1.一种半导体装置的制造方法，其特征在于：是使用密封树脂将搭载着多个半导体元件的配线基板的搭载着所述半导体元件的面与多个所述半导体元件密封；
切断被密封的所述配线基板而分离成各个半导体装置，其中所述半导体装置的所述配线基板的部分的边在切断面包含露出的配线；
加热分离后的所述半导体装置；
对加热后的所述半导体装置的所述密封树脂与所述配线基板的露出的所述切断面，通过金属溅镀形成屏蔽层，其中所述树脂包含环氧树脂或酚树脂，且所述半导体装置的加热是在高于100℃且250℃以下进行；
在所述半导体装置的边露出的所述配线基板的部分的面上成长氧化膜，所述氧化膜的厚度为未达50nm；
所述屏蔽层的厚度为0.1～8μm的范围。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于：所述半导体装置的加热是在氧浓度低于大气氧浓度的环境中加热。
3.根据权利要求1或2所述的半导体装置的制造方法，其特征在于：所述半导体装置的加热是在氧浓度1％以下的环境中加热。
4.根据权利要求1或2所述的半导体装置的制造方法，其特征在于：所述屏蔽层包含Cu。
5.根据权利要求1或2所述的半导体装置的制造方法，其特征在于：在分割成各个半导体装置之后、形成所述屏蔽层之前，在所述密封树脂表面进行刻印。
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