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CN111627867A - 芯片封装结构及其制作方法 - Google Patents

芯片封装结构及其制作方法 Download PDF

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CN111627867A
CN111627867A CN201910153370.1A CN201910153370A CN111627867A CN 111627867 A CN111627867 A CN 111627867A CN 201910153370 A CN201910153370 A CN 201910153370A CN 111627867 A CN111627867 A CN 111627867A
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layer
protective layer
chip
openings
circuit resetting
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倪庆羽
呂香桦
刘扬伟
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Qingdao New Core Technology Co ltd
Futaihua Industry Shenzhen Co Ltd
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Futaihua Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN201910153370.1A priority Critical patent/CN111627867A/zh
Priority to US16/398,746 priority patent/US11056411B2/en
Publication of CN111627867A publication Critical patent/CN111627867A/zh
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Abstract

一种芯片封装结构，包括一第一防护层、一形成在所述第一防护层上的线路重置层、一与所述线路重置层电连接的芯片及一包覆所述线路重置层及所述芯片的封胶体，所述第一防护层包括一外露表面及与所述外露表面相连接的至少四个侧边，所述封胶体包括一封胶表面；所述封胶体还包覆所述第一防护层的至少四个侧边。本发明提供的芯片封装结构能够避免所述线路重置层及第一防护层被外力破坏，增强所述芯片封装结构的可靠性。

Description

芯片封装结构及其制作方法
技术领域
本发明涉及芯片封装领域，尤其涉及一种芯片封装结构及其制作方法。
背景技术
随着集成电路的功能越来越强，集成度越来越高，封装技术在集成电路产品中扮演着越来越重要的角色，在整个电子系统的价值中所占的比例也越来越大。同时，随着集成电路特征尺寸达到纳米级，芯片向更高密度、更高时钟频率发展，封装也向更高密度的方向发展。
由于扇出晶圆级封装(flow)技术具有小型化、低成本、高集成度及具有更好的性能和更高的能源效率等优点，因此，扇出晶圆级封装技术已成为高要求的移动/无线网络等电子设备的重要封装方法，是目前最具有发展前景的封装技术之一。
然而，现有的芯片封装结构的封胶体仅包覆芯片的四周，重新布线层及防护层(常用的为polyimide，PI层)则裸露在所述封胶体外，使得所述封胶体的侧边与重新布线层及覆盖膜层的侧边之间出现高低差，从而导致所述重新布线层及覆盖膜层容易被外力破坏，造成所述芯片封装结构的可靠性变差。
发明内容
有鉴于此，本发明提供一种能够防止重新布线层及防护层被外力破坏、增强可靠性的芯片封装结构。
还有必要提供一种防止重新布线层及防护层被外力破坏、增强可靠性的芯片封装结构的制作方法。
一种芯片封装结构，包括一第一防护层、一形成在所述第一防护层上的线路重置层、一与所述线路重置层电连接的芯片及一包覆所述线路重置层及所述芯片的封胶体，所述第一防护层包括一外露表面及与所述外露表面相连接的至少四个侧边，所述封胶体包括一封胶表面；所述封胶体还包覆所述第一防护层的至少四个侧边。
进一步地，所述第一防护层上形成有多个第一开口，部分所述线路重置层从所述第一开口内裸露出来，一个所述第一开口内形成有一个焊球，所述焊球与所述线路重置层电连接。
进一步地，所述芯片封装结构还包括一第二防护层，所述第二防护层形成在所述线路重置层上且包覆所述线路重置层，所述第二防护层上形成有多个第二开口，部分所述线路重置层从所述第二开口内裸露出来，所述第二开口内形成有电接触垫。
进一步地，每一个第二开口内形成有一个电接触垫，每一个所述芯片还形成有多个导电凸块，所述导电凸块固接在所述电接触垫上，一个所述导电凸块对应一个所述电接触垫。
进一步地，所述第一防护层的外露表面与所述封胶体的封胶表面平齐。
进一步地，所述封胶体的材质为环氧塑封料。
一种芯片封装结构的制作方法，包括如下步骤：提供一承载基板；在所述承载基板的表面上形成一第一防护层及在所述第一防护层上形成一线路重置层，所述第一防护层包括一与所述承载基板相贴的外露表面；提供至少一芯片，并将所述芯片与所述线路重置层电性连接；形成一封胶体并使得所述封胶体包覆所述第一防护层、所述线路重置层及所述芯片，所述封胶体包括一与所述承载基板相贴的封胶表面；及移除所述承载基板，得到所述芯片封装结构。
进一步地，所述第一防护层上形成有多个第一开口，部分所述线路重置层从所述第一开口内裸露出来，在移除所述承载基板的步骤之后还包括步骤：在每一个所述第一开口内形成一个焊球，所述焊球与所述线路重置层电连接。
进一步地，在形成线路重置层之后，还包括步骤：形成一包覆所述线路重置层的第二防护层，所述第二防护层上形成有多个第二开口，部分所述线路重置层分别从所述第二开口内裸露出来；及在所述第二开口内形成电接触垫，一个第二开口内形成一个电接触垫；一个所述芯片上还形成有多个导电凸块，所述导电凸块固接在所述电接触垫上，一个所述导电凸块对应一个所述电接触垫。
进一步地，所述封胶体的封胶表面与所述第一防护层的外露表面相平齐。
本发明提供的芯片封装结构及其制作方法，将所述线路重置层及形成在所述线路重置层上的所述第一防护层的至少四个侧边包覆在所述封胶体内，从而能够避免所述线路重置层及第一防护层被外力破坏，进而增强所述芯片封装结构的可靠性。
附图说明
图1为本发明一实施例提供的一承载基板的剖面示意图。
图2为在图1所示的承载基板的表面形成一第一防护层、一线路重置层及一第二防护层后的剖面示意图。
图3为在图2所示的第二防护层的表面贴附一芯片后的剖面示意图。
图4为将图3所示的芯片、线路重置层、第一防护层及第二防护层包覆在一封胶体内之后的剖面示意图。
图5为去除图4所示的承载基板，得到一封装中间体之后的剖面示意图。
图6为在图5所示的第一防护层表面形成焊球，得到一芯片封装结构后的剖面示意图。
主要元件符号说明
Figure BDA0001982132910000031
Figure BDA0001982132910000041
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式仅是本发明一部分实施方式，而不是全部的实施方式。基于本发明中的实施方式，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。
需要说明的是，当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中设置的元件。当一个元件被认为是“设置于”另一个元件，它可以是直接设置在另一个元件上或者可能同时存在居中设置的元件。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本发明。
请参阅图1-6，本发明较佳实施方式提供一种芯片封装结构的制作方法，包括如下步骤：
第一步，请参阅图1，提供一承载基板10。所述承载基板10包括一承载板11及一形成在所述承载板11上的离型膜层12。
所述承载板11的材质为任何一种绝缘的具有承载作用的材料。在本实施例中，所述承载板11的材质为聚酰亚胺(polyimide，PI)。在其他实施例中，所述承载板11的材质还可以为聚对苯二甲酸乙二醇酯(Polyethylene Terephthalate，PET)、聚萘二甲酸乙二醇酯(Polyethylene Naphthalate，PEN)或其他树脂硬质材料或陶瓷板、金属板等。
所述离型膜层12包括一第一表面121，所述第一表面121与所述承载板11相背。
所述离型膜层12的材质可以为聚乙烯(polyethylene，PE)、聚对苯二甲酸乙二醇酯(polyethylene terephthalate，PET)、定向聚丙烯(oriented polypropylene，OPP)、聚碳酸酯(Polycarbonate，PC)、聚苯乙烯(polystyrene，PS)、聚甲基丙烯酸甲脂(polymethylmethacrylate，PMMA)、双轴向聚丙烯(Biaxially-oriented Polypropylene，BOPP)、聚甲基戊(Poly-4-methyl-1-pentene，TPX)、聚氯乙烯(polyvinyl chloride，PVC)、聚四氟乙烯(polytetrafluoroethylene，PTFE)、单硅或聚脂中任意一种或至少两种的组合。在本实施方式中，所述离型膜层12优选为PET离型膜。
第二步，请参阅图2，在所述离型膜层12的第一表面121上形成一第一防护层20、在所述第一防护层20上形成一线路重置层(redistribution layer，RDL)30及形成一包覆所述线路重置层30的第二防护层40。
所述第一防护层20上形成有多个第一开口21，所述第二防护层40上形成有多个第二开口41，部分所述线路重置层30分别从所述第一开口21及所述第二开口41内裸露出来。
所述第一防护层20可以为覆盖膜层，也可以为防焊层。在本实施方式中，所述第一防护层20为覆盖膜层。优选地，所述第一防护层20为聚酰亚胺(polyimide，PI)覆盖膜层。
所述第一防护层20包括一外露表面22及与所述外露表面22相连接的至少四个侧边23，所述外露表面22与所述第一表面121相接触。
所述线路重置层30可以通过电镀或影像转移制程制作而成。所述线路重置层30用于安装外部电子元件或与外部电子元件通信连接。
所述第二防护层40用于保护所述线路重置层30。
所述第二防护层40可以为覆盖膜层，也可以为防焊层。在本实施方式中，所述第二防护层40为覆盖膜层。优选地，所述第二防护层40为聚酰亚胺(polyimide，PI)覆盖膜层。
第三步，请参阅图3，在所述第二开口41内形成电接触垫50，提供至少一芯片60并将所述芯片60通过所述电接触垫50固接在所述第二防护层40上，所述芯片60与所述线路重置层30通过所述电接触垫50电性连接。
所述芯片60包括一第二表面61，所述第二表面61面向所述第二防护层40且平行于所述第二防护层40。所述第二表面61上还形成有多个导电凸块62，所述导电凸块62固接在所述电接触垫50上。一个所述导电凸块62对应一个所述电接触垫50。
第四步，请参阅图4，在所述承载基板10的形成有线路重置层30及芯片60的一侧形成一封胶体70并使得所述封胶体70包覆所述第一防护层20、所述线路重置层30、所述第二防护层40及所述芯片60。
所述封胶体70包括一封胶表面71。所述封胶表面71与所述第一表面121相接触。
在本实施方式中，通过注塑成型的方式形成所述封胶体70。具体地，首先提供一模具(图未示)，所述模具包括一模穴及一注胶通道，将包含有所述第一防护层20、所述线路重置层30及所述芯片60的承载基板10收容于所述模穴内；然后，通过所述注胶通道向所述模穴内注入胶体，使胶体包覆所述第一防护层20、所述线路重置层30及所述芯片60；接着，固化所述胶体，从而形成所述封胶体70；之后，将形成有所述封胶体70的所述承载基板10从所述模穴中取出来。
在本实施方式中，所述封胶体70的材质为环氧塑封料(epoxy molding compound，EMC)。在其他实施方式中，所述封胶体70的材质并不局限于EMC材料，还可以为其他的适应于塑封的材料。
第五步，请参阅图5，移除所述承载基板10，得到一封装中间体110。
所述封装中间体110包括一第一防护层20、一形成在所述第一防护层20上的线路重置层30、一包覆所述线路重置层30的第二防护层40、一芯片60及一包覆所述第一防护层20、所述线路重置层30、所述第二防护层40及所述芯片60的封胶体70。其中，所述第一防护层20包括一外露表面22及与所述外露表面22相连接的至少四个侧边23，所述外露表面22远离所述线路重置层30，所述第一防护层20上形成有多个第一开口21，所述第二防护层40上形成有多个第二开口41，部分所述线路重置层30分别从所述第一开口21及所述第二开口41内裸露出来。一个所述第二开口41内形成有一个电接触垫50。所述芯片60包括一第二表面61，所述第二表面61面向所述第二防护层40且平行于所述第二防护层40。所述第二表面61上还形成有多个导电凸块62，所述导电凸块62固接在所述电接触垫50上。一个所述导电凸块62对应一个所述电接触垫50。所述封胶体70包括一封胶表面71。所述封胶体70完全包括所述线路重置层30、所述第二防护层40及所述芯片60并包覆所述第一防护层20的至少四个侧边23，所述封胶体70的封胶表面71与所述第一防护层20的外露表面22相平齐。
第六步，请参阅图6，在多个所述第一开口21内填充导电材料并形成多个焊球80，进而形成一芯片封装结构100。
多个所述焊球80用于电连接外部电子元件(图未示)，所述外部电子元件可以为芯片、电路板等。
本发明还提供一种芯片封装结构100，所述芯片封装结构100包括一第一防护层20、一形成在所述第一防护层20上的线路重置层30、一包覆所述线路重置层30的第二防护层40、一与所述线路重置层30电连接的芯片60及一包覆所述第一防护层20、所述线路重置层30、所述第二防护层40及所述芯片60的封胶体70。其中，所述第一防护层20包括一外露表面22，所述外露表面22远离所述线路重置层30，所述第一防护层20上形成有多个第一开口21，所述第二防护层40上形成有多个第二开口41，部分所述线路重置层30分别从所述第一开口21及所述第二开口41内裸露出来。一个所述第二开口41内形成有一个电接触垫50。所述第一防护层20还包括一与所述线路重置层30相背的外露表面22及与所述外露表面22相连接的至少四个侧边23，所述封胶体70包覆所述第一防护层20的至少四个侧边23。所述芯片60包括一第二表面61，所述第二表面61面向所述第二防护层40且平行于所述第二防护层40。所述第二表面61上还形成有多个导电凸块62，所述导电凸块62固接在所述电接触垫50上。一个所述导电凸块62对应一个所述电接触垫50。所述封胶体70包括一封胶表面71。所述封胶表面71与所述第一防护层20的外露表面22相平齐。
所述芯片封装结构100还包括多个焊球80，一个所述焊球80形成在一个所述第一开口21内，多个所述焊球80分别与所述线路重置层30电连接，用以电连接外部电子元件。
本发明提供的芯片封装结构及其制作方法，将所述线路重置层30及形成在所述线路重置层30上的所述第一防护层20的至少四个侧边23也包覆在所述封胶体70内，从而能够避免所述线路重置层30及第一防护层20被外力破坏，进而增强所述芯片封装结构100的可靠性。
以上所述，仅是本发明的较佳实施方式而已，并非对本发明任何形式上的限制，虽然本发明已是较佳实施方式揭露如上，并非用以限定本发明，任何熟悉本专业的技术人员，在不脱离本发明技术方案范围内，当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施方式，但凡是未脱离本发明技术方案内容，依据本发明的技术实质对以上实施方式所做的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (10)

1.一种芯片封装结构，包括一第一防护层、一形成在所述第一防护层上的线路重置层、一与所述线路重置层电连接的芯片及一包覆所述线路重置层及所述芯片的封胶体，所述第一防护层包括一外露表面及与所述外露表面相连接的至少四个侧边，所述封胶体包括一封胶表面；其特征在于，所述封胶体还包覆所述第一防护层的至少四个侧边。
2.如权利要求1所述的芯片封装结构，其特征在于，所述第一防护层上形成有多个第一开口，部分所述线路重置层从所述第一开口内裸露出来，一个所述第一开口内形成有一个焊球，所述焊球与所述线路重置层电连接。
3.如权利要求1所述的芯片封装结构，其特征在于，所述芯片封装结构还包括一第二防护层，所述第二防护层形成在所述线路重置层上且包覆所述线路重置层，所述第二防护层上形成有多个第二开口，部分所述线路重置层从所述第二开口内裸露出来，所述第二开口内形成有电接触垫。
4.如权利要求3所述的芯片封装结构，其特征在于，每一个第二开口内形成有一个电接触垫，每一个所述芯片还形成有多个导电凸块，所述导电凸块固接在所述电接触垫上，一个所述导电凸块对应一个所述电接触垫。
5.如权利要求1所述的芯片封装结构，其特征在于，所述第一防护层的外露表面与所述封胶体的封胶表面平齐。
6.如权利要求1所述的芯片封装结构，其特征在于，所述封胶体的材质为环氧塑封料。
7.一种芯片封装结构的制作方法，包括如下步骤：
提供一承载基板；
在所述承载基板的表面上形成一第一防护层及在所述第一防护层上形成一线路重置层，所述第一防护层包括一与所述承载基板相贴的外露表面；
提供至少一芯片，并将所述芯片与所述线路重置层电性连接；
形成一封胶体并使得所述封胶体包覆所述第一防护层、所述线路重置层及所述芯片，所述封胶体包括一与所述承载基板相贴的封胶表面；及
移除所述承载基板，得到所述芯片封装结构。
8.如权利要求7所述的芯片封装结构的制作方法，其特征在于，所述第一防护层上形成有多个第一开口，部分所述线路重置层从所述第一开口内裸露出来，在移除所述承载基板的步骤之后还包括步骤：
在每一个所述第一开口内形成一个焊球，所述焊球与所述线路重置层电连接。
9.如权利要求7所述的芯片封装结构的制作方法，其特征在于，在形成线路重置层之后，还包括步骤：
形成一包覆所述线路重置层的第二防护层，所述第二防护层上形成有多个第二开口，部分所述线路重置层分别从所述第二开口内裸露出来；及
在所述第二开口内形成电接触垫，一个第二开口内形成一个电接触垫；一个所述芯片上还形成有多个导电凸块，所述导电凸块固接在所述电接触垫上，一个所述导电凸块对应一个所述电接触垫。
10.如权利要求7所述的芯片封装结构的制作方法，其特征在于，所述封胶体的封胶表面与所述第一防护层的外露表面相平齐。
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