[go: up one dir, main page]

CN104587936A - Photochemical reaction system - Google Patents

Photochemical reaction system Download PDF

Info

Publication number
CN104587936A
CN104587936A CN201510048977.5A CN201510048977A CN104587936A CN 104587936 A CN104587936 A CN 104587936A CN 201510048977 A CN201510048977 A CN 201510048977A CN 104587936 A CN104587936 A CN 104587936A
Authority
CN
China
Prior art keywords
reaction
reactant
control unit
photochemical
engine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510048977.5A
Other languages
Chinese (zh)
Other versions
CN104587936B (en
Inventor
廖宗仁
余其俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Bright Led Ellectronics Ltd
Original Assignee
Dongguan Bright Led Ellectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Bright Led Ellectronics Ltd filed Critical Dongguan Bright Led Ellectronics Ltd
Priority to CN201510048977.5A priority Critical patent/CN104587936B/en
Publication of CN104587936A publication Critical patent/CN104587936A/en
Application granted granted Critical
Publication of CN104587936B publication Critical patent/CN104587936B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122Incoherent waves
    • B01J19/127Sunlight; Visible light

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The invention discloses a photochemical reaction system, which comprises an LED photochemical engine, a chemical reaction container, a control unit, a reaction sensor and a reaction unit, wherein the control unit is electrically connected with the LED photochemical engine, the chemical reaction container and the reaction sensor, controls the starting, the stopping and the adjustment of the LED photochemical engine and controls the circulation of the reaction unit in the chemical reaction container through the control unit, and the etching and deposition degrees in the chemical reaction container are fed back to the control unit through the reaction sensor; the reaction unit at least comprises a first reactant and a second reactant, the first reactant is used as a substrate needing etching and deposition, and the second reactant is used as a solvent for etching and depositing the first reactant; the first reactant is soaked in the second reactant.

Description

一种光化学反应系统A photochemical reaction system

技术领域 technical field

本发明涉及半导体和光化学技术领域,特别是一种光化学反应系统。 The invention relates to the technical fields of semiconductor and photochemistry, in particular to a photochemical reaction system.

背景技术 Background technique

所谓光化学反应是指由一个原子、分子、自由基或离子吸收一个光子所引发的化学反应。常用的光化学反应都是利用波长为400纳米之下,800纳米之上的光波来进行,也即作为不可见光的紫外线和红外线。 The so-called photochemical reaction refers to the chemical reaction caused by the absorption of a photon by an atom, molecule, free radical or ion. Commonly used photochemical reactions are carried out using light waves with wavelengths below 400 nanometers and above 800 nanometers, that is, ultraviolet and infrared rays as invisible light.

氧化铟锡(ITO)是一种透明导电氧化物半导体材料,具有稳定的化学性质,透光性优良、导电能力良好,在太阳能电池、平板显示、防霜玻璃、节能建筑窗、航空领域得到广泛的应用。 Indium tin oxide (ITO) is a transparent conductive oxide semiconductor material with stable chemical properties, excellent light transmission, and good electrical conductivity. It is widely used in solar cells, flat panel displays, frost-proof glass, energy-saving building windows, and aviation fields. Applications.

ITO膜在LED外延片上作为透明导电膜的角色,ITO表面的粗糙度对于亮度的提升有明显的帮助。为了实现该粗糙度,传统上需要上光阻后蚀刻ITO,需要经过温度为100℃至600℃的高含量氧气>100sccm)的热处理后,ITO表面会局部聚积成氧化铟及氧化锡的子颗粒,然后与相应的溶剂对氧化铟或/及氧化锡进行蚀刻,以达到粗糙的程度。 The ITO film acts as a transparent conductive film on the LED epitaxial wafer, and the roughness of the ITO surface is of great help to the improvement of the brightness. In order to achieve this roughness, it is traditionally necessary to etch ITO after applying photoresist, and after heat treatment with a high content of oxygen > 100 sccm at a temperature of 100°C to 600°C, the surface of ITO will locally accumulate into sub-particles of indium oxide and tin oxide , and then etch indium oxide or/and tin oxide with a corresponding solvent to achieve roughness.

高温的加热除了耗能之外,还常常伴随着加热后原液挥发后对身体的危害,不能满足现代企业对环保生产的要求,降低了企业的竞争力。 In addition to energy consumption, high-temperature heating is often accompanied by harm to the body after the raw liquid volatilizes after heating, which cannot meet the requirements of modern enterprises for environmentally friendly production and reduces the competitiveness of enterprises.

发明内容 Contents of the invention

    本发明要解决的技术问题是针对上述现有技术的不足,提供一种光化学反应系统,实现不需要加热而利用可见光LED进行蚀刻、沈积处理,达到节能、环保、纯净的效果,对人体无害。 The technical problem to be solved in the present invention is to provide a photochemical reaction system for the above-mentioned deficiencies in the prior art, which realizes etching and deposition processing using visible light LEDs without heating, and achieves energy saving, environmental protection, and pure effects, and is harmless to the human body. Harmful.

为解决上述技术问题,本发明所采取的技术方案是:一种光化学反应系统,包括LED光化学引擎、化学反应容器、控制单元、反应传感器和反应单元,该控制单元与所述LED光化学引擎、化学反应容器、反应传感器电性连接,并通过控制单元控制所述LED光化学引擎的启停和调节、以及控制所述反应单元在所述化学反应容器的流通,通过所述反应传感器对所述化学反应容器内的蚀刻、沈积程度向所述控制单元进行反馈;所述反应单元至少包括第一反应子和第二反应子,该第一反应子作为需要进行蚀刻、沈积的基材,该第二反应子作为蚀刻、沈积所述第一反应子的溶剂;所述第一反应子浸泡在所述第二反应子中。 In order to solve the above-mentioned technical problems, the technical scheme adopted by the present invention is: a kind of photochemical reaction system, comprises LED photochemical engine, chemical reaction container, control unit, reaction sensor and reaction unit, and this control unit and described LED photochemical engine, chemical The reaction container and the reaction sensor are electrically connected, and the control unit controls the start-stop and adjustment of the LED photochemical engine, and controls the circulation of the reaction unit in the chemical reaction container, and the chemical reaction is controlled by the reaction sensor. The etching and deposition levels in the container are fed back to the control unit; the reaction unit includes at least a first reactant and a second reactant, the first reactant serves as the substrate to be etched and deposited, and the first reactant The second reactant is used as a solvent for etching and depositing the first reactant; the first reactant is soaked in the second reactant.

上述技术方案中,所述反应传感器以所述第一反应子或第二反应子作为对象,通过电子显微镜、质谱仪或光接发器作为途径,向所述控制单元进行蚀刻、沈积程度的反馈;并且所述反应传感器设置于所述化学反应容器之外或之内。 In the above technical solution, the reaction sensor uses the first reactant or the second reactant as an object, and uses an electron microscope, a mass spectrometer or an optical transceiver as a way to conduct etching and deposition to the control unit. feedback; and the reaction sensor is disposed outside or inside the chemical reaction vessel.

上述技术方案中,所述化学反应容器还连通有输送管道,该输送管道与多个反应子容器连通。 In the above technical solution, the chemical reaction container is further communicated with a delivery pipeline, and the delivery pipeline communicates with a plurality of reaction sub-containers.

上述技术方案中,所述LED光化学引擎所使用的光波波长为400纳米至800纳米。 In the above technical solution, the wavelength of light used by the LED photochemical engine is 400 nanometers to 800 nanometers.

上述技术方案中,所述第二反应子为酸液,为草酸或磷酸。  In the above technical solution, the second reactant is acid liquid, which is oxalic acid or phosphoric acid. the

本发明的有益效果是:通过利用LED光化学引擎对第一反应子进行激态反应,并且通过第二反应子与所激态反应产生的元素进行反应,对第一反应子进行蚀刻、沈积。在不需要高温加热的作用下进行对半导体的蚀刻、沈积,有利于节能环保。并且不要产生对人体有害的物质,安全性有保障。也不会产生杂志依附在第一反应子上,使蚀刻、沈积出来第一反应子比较纯净。 The beneficial effects of the present invention are: the first reactant is etched and deposited by using the LED photochemical engine to perform an excited state reaction on the first reactant, and the second reactant reacts with the element generated by the excited state reaction. Etching and deposition of semiconductors can be carried out without high temperature heating, which is beneficial to energy saving and environmental protection. And do not produce substances harmful to the human body, and the safety is guaranteed. There will also be no impurities attached to the first reactants, so that the first reactants that are etched and deposited are relatively pure.

附图说明 Description of drawings

图1是本发明的结构示意图。 Fig. 1 is a schematic structural view of the present invention.

图中,1、LED光化学引擎;2、化学反应容器;3、第一反应子;4、第二反应子;5、输送管道;6、阀门;7、反应子容器。 In the figure, 1. LED photochemical engine; 2. Chemical reaction container; 3. First reactant; 4. Second reactant; 5. Delivery pipeline; 6. Valve; 7. Reactor container.

具体实施方式 Detailed ways

下面结合附图对本发明作进一步详细的说明。 The present invention will be described in further detail below in conjunction with the accompanying drawings.

如图1所示,一种光化学反应系统,包括LED光化学引擎1、化学反应容器2、控制单元、反应传感器和反应单元,该控制单元与所述LED光化学引擎1、化学反应容器2、反应传感器电性连接,并通过控制单元控制所述LED光化学引擎1的启停和调节、以及控制所述反应单元在所述化学反应容器2的流通,通过所述反应传感器对所述化学反应容器2内的蚀刻、沈积程度向所述控制单元进行反馈;所述反应单元至少包括第一反应子3和第二反应子4,该第一反应子3作为需要进行蚀刻、沈积的基材,该第二反应子4作为蚀刻、沈积所述第一反应子3的溶剂;所述第一反应子3浸泡在所述第二反应子4中。 As shown in Figure 1, a kind of photochemical reaction system comprises LED photochemical engine 1, chemical reaction container 2, control unit, reaction sensor and reaction unit, and this control unit and described LED photochemical engine 1, chemical reaction container 2, reaction sensor Electrically connected, and through the control unit to control the start-stop and adjustment of the LED photochemical engine 1, and to control the flow of the reaction unit in the chemical reaction container 2, through the reaction sensor to the chemical reaction container 2 The etching and deposition levels are fed back to the control unit; the reaction unit includes at least a first reactant 3 and a second reactant 4, the first reactant 3 serves as the substrate to be etched and deposited, the The second reactant 4 is used as a solvent for etching and depositing the first reactant 3 ; the first reactant 3 is immersed in the second reactant 4 .

其中,LED光化学引擎1,可以由一个或多个LED串联或并联组成,LED的使用能够很好地进行节能和增加工作稳定性。LED光化学引擎1的对第一反应子3的照射范围限于第一反应子3所浸泡到的部分。 Wherein, the LED photochemical engine 1 can be composed of one or more LEDs connected in series or in parallel, and the use of LEDs can save energy and increase working stability. The irradiation range of the LED photochemical engine 1 to the first reactant 3 is limited to the part where the first reactant 3 is soaked.

其中,化学反应容器2可以是化学反应槽、化学反应室或化学反应腔,由于本发明不需要使用高温加热,原液不会发生挥发,可以使用化学反应槽,以方便操作。 Wherein, the chemical reaction container 2 can be a chemical reaction tank, a chemical reaction chamber or a chemical reaction chamber. Since the present invention does not need to use high temperature heating, the stock solution will not volatilize, and the chemical reaction tank can be used to facilitate operation.

其中,所述反应传感器以所述第一反应子3或第二反应子4作为对象,通过电子显微镜、质谱仪或光接发器作为途径,向所述控制单元进行蚀刻、沈积程度的反馈;并且所述反应传感器设置于所述化学反应容器2之外或之内。通过电子显微镜对基材表面的蚀刻、沈积程度进行图像观察并反馈给控制单元。通过光接发器的光发射器发射检测光波到基材的表面,再反射到对应的光接收器中,根据所反射检测光波的强弱来判断基材表面的蚀刻程度,形成蚀刻,检测光波会在蚀刻、沈积的位置发生漫反射,使光接收器接收到的检测光波减弱,以减弱的程度标识为蚀刻、沈积的程度,当光接收器接收到的检测光波减弱。质谱仪可以测量第一反应子3或第二反应子4的成分,传送到控制单元,并由控制单元分析比较反应前的成分数据,而实现是否达到所要求的蚀刻、沈积程度。 Wherein, the reaction sensor uses the first reactant 3 or the second reactant 4 as an object, and uses an electron microscope, a mass spectrometer or an optical transceiver as a way to provide feedback on the degree of etching and deposition to the control unit and the reaction sensor is arranged outside or inside the chemical reaction container 2 . The etching and deposition degree on the surface of the substrate is observed by electron microscope and fed back to the control unit. The detection light wave is emitted to the surface of the substrate through the light transmitter of the optical transceiver, and then reflected to the corresponding light receiver, and the etching degree of the substrate surface is judged according to the strength of the reflected detection light wave, forming etching, and detecting the light wave Diffuse reflection will occur at the position of etching and deposition, so that the detection light wave received by the light receiver is weakened, and the degree of attenuation is marked as the degree of etching and deposition. When the detection light wave received by the light receiver is weakened. The mass spectrometer can measure the composition of the first reactant 3 or the second reactant 4, and transmit it to the control unit, and the control unit analyzes and compares the composition data before the reaction, so as to realize whether the required etching and deposition levels are achieved.

其中,所述化学反应容器2还连通有输送管道5,该输送管道5与多个反应子容器7连通。在该多个反应子容器7当中,存放有不同的反应子,反应子容器7与输送管道5之间设置有由控制单元控制的阀门6。 Wherein, the chemical reaction container 2 is also communicated with a conveying pipeline 5 , and the conveying pipeline 5 communicates with a plurality of reaction sub-containers 7 . Different reactants are stored in the plurality of reaction sub-containers 7 , and a valve 6 controlled by the control unit is arranged between the reaction sub-containers 7 and the delivery pipeline 5 .

其中,所述LED光化学引擎1所使用的光波波长为400纳米至800纳米。400纳米至800纳米的光波波长为可见光。 Wherein, the light wavelength used by the LED photochemical engine 1 is 400 nm to 800 nm. The wavelength of light from 400 nm to 800 nm is visible light.

其中,所述第二反应子4为酸液,为草酸或磷酸。 Wherein, the second reactant 4 is an acid solution, such as oxalic acid or phosphoric acid.

本发明的工作原理,实施例:第一反应子3为ITO,第二反应子4为上述的草酸或磷酸。LED光化学引擎1竖直设置于化学反应槽的内,第一反应子3竖直挂设于化学反应槽内,LED光化学引擎1上的多个LED平行照射在第一反应子3的表面上,照射的光波波长使用可见光,当光波照射在第一反应子3的表面上,将铟和锡元素产生激态的铟分子或锡分子,铟分子或锡分子从第一反应子3的表面离开并与第二反应子4进行反应,使第一反应子3表面产生蚀刻。再由反应传感器对第一反应子3表面进行蚀刻、沈积程度的反馈,控制单元的接收到反馈数据后会控制LED光化学引擎1、化学反应槽和阀门6进行相应的动作。例如是将第二反应子4进行排放并注入清水清洗,清洗后注入不同的反应子进行连锁的蚀刻、沈积或后工序等。 Working principle of the present invention, embodiment: the first reactant 3 is ITO, and the second reactant 4 is the above-mentioned oxalic acid or phosphoric acid. The LED photochemical engine 1 is vertically arranged in the chemical reaction tank, the first reactant 3 is vertically hung in the chemical reaction tank, and a plurality of LEDs on the LED photochemical engine 1 shines on the surface of the first reactant 3 in parallel, The wavelength of the irradiated light wave uses visible light. When the light wave is irradiated on the surface of the first reactant 3, the indium and tin elements will generate excited state indium molecules or tin molecules, and the indium molecules or tin molecules will leave the surface of the first reactant 3 and React with the second reactant 4 to cause etching on the surface of the first reactant 3 . Then, the reaction sensor performs feedback on the etching and deposition degree on the surface of the first reactant 3, and the control unit will control the LED photochemical engine 1, the chemical reaction tank and the valve 6 to perform corresponding actions after receiving the feedback data. For example, the second reactants 4 are discharged and poured into clean water for cleaning, and after cleaning, different reactants are injected to carry out chain etching, deposition or subsequent processes.

以上的实施例只是在于说明而不是限制本发明,故凡依本发明专利申请范围所述的方法所做的等效变化或修饰,均包括于本发明专利申请范围内。 The above embodiments are only intended to illustrate rather than limit the present invention, so all equivalent changes or modifications made according to the methods described in the scope of the patent application of the present invention are included in the scope of the patent application of the present invention.

Claims (5)

1. a photochemical reaction system, it is characterized in that: comprise LED light chemistry engine, chemical reaction container, control unit, response sensor and reaction member, this control unit and described LED light chemistry engine, chemical reaction container, response sensor are electrically connected, and control start and stop and the adjustment of described LED light chemistry engine by control unit and control the circulation of described reaction member at described chemical reaction container, by described response sensor, the etching in described chemical reaction container, Shen are amassed degree and fed back to described control unit; Described reaction member at least comprises the first reaction and the second reaction, the sub base material as needing to carry out etching, Shen is long-pending of this first reaction, and this second reaction is as the solvent etched, described first reaction is amassed in Shen; Described first reaction is immersed in described second reaction.
2. a kind of photochemical reaction system according to claim 1, it is characterized in that: described response sensor reacts son as object using described first reaction or second, by electron microscope, mass spectrograph or light receiving-transmitting device as approach, carry out the feedback etched, degree is amassed in Shen to described control unit; And described response sensor is arranged at outside described chemical reaction container or within.
3. a kind of photochemical reaction system according to claim 1, is characterized in that: described chemical reaction container is also communicated with conveyance conduit, this conveyance conduit and the sub-reservoir of multiple reaction.
4. a kind of photochemical reaction system according to claim 1, is characterized in that: the optical wavelength that described LED light chemistry engine uses is 400 nanometer to 800 nanometers.
5. a kind of photochemical reaction system according to claim 1, is characterized in that: described second reaction is acid solution, is oxalic acid or phosphoric acid.
CN201510048977.5A 2015-01-30 2015-01-30 Photochemical reaction system Active CN104587936B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510048977.5A CN104587936B (en) 2015-01-30 2015-01-30 Photochemical reaction system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510048977.5A CN104587936B (en) 2015-01-30 2015-01-30 Photochemical reaction system

Publications (2)

Publication Number Publication Date
CN104587936A true CN104587936A (en) 2015-05-06
CN104587936B CN104587936B (en) 2017-03-22

Family

ID=53114191

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510048977.5A Active CN104587936B (en) 2015-01-30 2015-01-30 Photochemical reaction system

Country Status (1)

Country Link
CN (1) CN104587936B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068693A (en) * 2017-02-20 2017-08-18 友达光电股份有限公司 Electronic component, method of manufacturing the same, transposing element, and method of transposing micro-element

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1346864A (en) * 2000-09-08 2002-05-01 关东化学株式会社 Etching liquid composition
CN1511338A (en) * 2002-03-25 2004-07-07 ������������ʽ���� Etching solution composition
JP2007220971A (en) * 2006-02-17 2007-08-30 Showa Denko Kk Light-emitting element, manufacturing method thereof, and lamp
US20110171789A1 (en) * 2004-10-07 2011-07-14 Pinon Technologies, Inc. Light-emitting nanoparticles and method of making same
CN102925938A (en) * 2012-09-14 2013-02-13 中国科学院半导体研究所 System for treating laser coating
CN103160830A (en) * 2013-03-04 2013-06-19 同济大学 Nonadiabatic near field optical induction chemical etching method of optical fiber transmission
CN204638185U (en) * 2015-01-30 2015-09-16 东莞佰鸿电子有限公司 A photochemical reaction system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1346864A (en) * 2000-09-08 2002-05-01 关东化学株式会社 Etching liquid composition
CN1511338A (en) * 2002-03-25 2004-07-07 ������������ʽ���� Etching solution composition
US20110171789A1 (en) * 2004-10-07 2011-07-14 Pinon Technologies, Inc. Light-emitting nanoparticles and method of making same
JP2007220971A (en) * 2006-02-17 2007-08-30 Showa Denko Kk Light-emitting element, manufacturing method thereof, and lamp
CN102925938A (en) * 2012-09-14 2013-02-13 中国科学院半导体研究所 System for treating laser coating
CN103160830A (en) * 2013-03-04 2013-06-19 同济大学 Nonadiabatic near field optical induction chemical etching method of optical fiber transmission
CN204638185U (en) * 2015-01-30 2015-09-16 东莞佰鸿电子有限公司 A photochemical reaction system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
袁丁: "由光辅助电化学刻蚀制备大面积p型硅微通道板", 《中国优秀硕士学位论文全文数据库信息科技辑》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068693A (en) * 2017-02-20 2017-08-18 友达光电股份有限公司 Electronic component, method of manufacturing the same, transposing element, and method of transposing micro-element
US10438911B2 (en) 2017-02-20 2019-10-08 Au Optronics Corporation Electronic component, transposing component, method for fabricating the electronic component, and method for transposing a micro-element
CN107068693B (en) * 2017-02-20 2019-11-19 友达光电股份有限公司 Electronic component and its manufacturing method, transposition element and transposition method of micro element

Also Published As

Publication number Publication date
CN104587936B (en) 2017-03-22

Similar Documents

Publication Publication Date Title
Chen et al. Surface passivation effect on the photoluminescence of ZnO nanorods
US8176653B2 (en) Method for removing moisture from substrate coated with transparent electrode
JP6014607B2 (en) Light extraction substrate for organic light emitting diodes
CN101935168B (en) Preparation method of self-cleaning antireflection film with photocatalytic function on surface
Kumara et al. Preparation of fluoride-doped tin oxide films on soda–lime glass substrates by atomized spray pyrolysis technique and their subsequent use in dye-sensitized solar cells
WO2016019776A1 (en) Conductive metal networks including metal nanowires and metal nanoparticles and methods of fabricating the same
KR101352246B1 (en) Method for fabricating ZnO thin films
CN103021533A (en) transparent electrode laminate
CN103496223B (en) Antifog self-cleaning glass and preparation method thereof
CN101337773A (en) A kind of preparation method with high conductivity ITO film
CN103646868B (en) Hydro-thermal-vapor etch legal system is for the method for porous silicon
CN105637619A (en) Uv-transmitting-substrate cleaning device and cleaning method
CN104587936B (en) Photochemical reaction system
CN109081600A (en) Using the preparation method of salt chemical reagent etching anti reflection glass
CN204638185U (en) A photochemical reaction system
WO2014180267A1 (en) Method for fabricating hydrophobic component, hydrophobic component and photovoltaic device cross-reference to related applications
CN102627409A (en) Method for preparing carbon nanotube film
TW201140867A (en) Method of manufacturing solar cell and solar cell
US10473613B2 (en) Light-addressable potentiometric sensing units
Wang et al. All-optical logic gates based on hierarchical photonic crystal modulated photoluminescence of perovskite nanocrystals
CN108584890A (en) A kind of synthetic method of selenizing thin film lead
CN105810777A (en) Preparation method for flexible substrate, and preparation method for flexible nanometre anti-reflection film of flexible substrate
JP6056694B2 (en) Gas barrier film
CN102515565A (en) A kind of inorganic sol-gel preparation method of V2O5 thin film
CN106298066B (en) A kind of preparation method of flexible transparent conducting film

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant