CN105637619A - Uv-transmitting-substrate cleaning device and cleaning method - Google Patents
Uv-transmitting-substrate cleaning device and cleaning method Download PDFInfo
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- CN105637619A CN105637619A CN201480056479.9A CN201480056479A CN105637619A CN 105637619 A CN105637619 A CN 105637619A CN 201480056479 A CN201480056479 A CN 201480056479A CN 105637619 A CN105637619 A CN 105637619A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Liquid Crystal (AREA)
- Cleaning In General (AREA)
Abstract
A UV-transmitting-substrate cleaning device in an embodiment is provided with the following: an ozonated-water supply unit that supplies ozonated water to a cleaning surface of a substrate; and an ultraviolet-light irradiation unit that, with ozonated water supplied to said cleaning surface, irradiates the opposite surface of the substrate with ultraviolet light containing wavelengths in the 250-260 nm range.
Description
Technical field
The present invention relates to the rinser of ultraviolet permeability substrate and cleaning method.
Background technology
In the past, as the cleaning method of quasiconductor silicon substrate and liquid crystal glass base, prevailing is RCA ablution and the wet-cleaned method using the cleanout fluid such as alkalis. In RCA ablution, for instance use the dense medicine of hydrogen peroxide, sulphuric acid, hydrochloric acid, ammonia etc., the removed object of substrate surface is removed. It addition, using alkalis etc. as in the cleaning of cleanout fluid, combination is scrubbed, the method for ultraviolet radiation, ultrasonic waves for cleaning etc. is also comparatively prevailing. In these methods, owing to using dense medicine or cleanout fluid in a large number, thus consider from the angle of drainage sunk well operation and environmental conservation, require not use the cleaning method of dense medicine and cleanout fluid always as far as possible. It addition, glass substrate is compared with semiconductor wafer, its size is very big, and in recent years, the maximization of glass substrate becomes apparent from. In the cleaning of such large-size glass substrate, the making consumption and the consumption that makes of the pure water that they rinse increased of dense medicine or cleanout fluid. Accordingly, because the increase of the surging and drainage sunk well load of the manufacturing cost of glass substrate and the problem such as increase producing carrying capacity of environment.
It addition, in order to improve cleaning efficiency, as the pre-treatment of wet-cleaned, be sometimes also carried out dry clean. In dry clean, ultraviolet radiation is carried out on substrate surface treatment, thus make the Organic substance of substrate surface decompose (referring for example to patent documentation 1,2). It addition, the alternative method of the dry clean as pre-treatment, the inorganic matter that adopts the cleaning base plate surface in advance such as organic solvent, the method then carrying out rinsing with pure water are also comparatively prevailing.
But, owing to former dry clean can not remove inorganic matter, thus after carrying out dry clean, it is necessary to carry out using the wet-cleaned of dense medicine and cleanout fluid, to clean inorganic matter. Therefore, after wet-cleaned, produce substantial amounts of draining, thus needing this draining is processed. Even if it addition, in the method being carried out as pre-treatment use organic solvent, rinse with pure water respectively after organic solvent cleans and after wet-cleaned, thus as described above, it is also desirable to substantial amounts of draining is processed.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 5-182945 publication
Patent documentation 2: Japanese Unexamined Patent Publication 5-224167 publication
Summary of the invention
Invent problem to be solved
The present invention completes for solving above-mentioned problem, its object is to, there is provided compared with the former cleaning method of the medicine dense with use and cleanout fluid, it is possible to alleviate rinser and the cleaning method of the ultraviolet permeability substrate of drainage sunk well load and carrying capacity of environment.
For solving the means of problem
The rinser of embodiment is the rinser of a kind of ultraviolet permeability substrate, it is characterised in that described rinser has: ozone water supply portion, and it is to the cleaning surface ozone supply water of described substrate; And ultraviolet radiation portion, it irradiates the ultraviolet of the wavelength comprising 250��260nm when to the cleaning surface ozone supply water of described substrate to the face of the opposition side of the cleaning surface of described substrate.
The cleaning method of embodiment is the cleaning method of a kind of ultraviolet permeability substrate, it is characterized in that, while the cleaning surface ozone supply water of described substrate, irradiating the ultraviolet of the wavelength comprising 250��260nm to the face of the opposition side of the cleaning surface of described substrate.
The effect of invention
The rinser of the ultraviolet permeability substrate according to the present invention and cleaning method, compared with the former cleaning method of the medicine dense with use, it is possible to alleviate drainage sunk well load and carrying capacity of environment.
Accompanying drawing explanation
Fig. 1 is the figure of the cleaning method that embodiment is described.
Fig. 2 is the side view of the rinser schematically illustrating embodiment.
Fig. 3 is the top view of the rinser schematically illustrating embodiment.
Fig. 4 indicates that the flow chart of the cleaning method of embodiment.
Fig. 5 indicates that the figure of the wavelength characteristic of the low pressure mercury lamp that embodiment uses.
Detailed description of the invention
Underneath with accompanying drawing, embodiments of the present invention are illustrated. In the various figures, the composition with same function is marked same symbol, and the explanation of repetition is omitted. The invention is not limited in following embodiment.
Fig. 1 is the figure of the cleaning method that embodiment is described. The cleaning method of present embodiment is when to the cleaning surface 2a ozone supply water of substrate 2, to face (hereinafter referred to as ultraviolet radiation face) the 2b irradiation ultraviolet radiation of the opposition side of cleaning surface 2a. Removed object 3 in present embodiment is such as the organic film of photoresist etc. and the Organic substance being attached to cleaning surface 2a in dust free room. It addition, in the cleaning method of present embodiment, it is also possible to removal is attached to the inorganic matters such as the metal particle of cleaning surface 2a.
The cleaning method of present embodiment is when to cleaning surface 2a ozone supply water, to ultraviolet radiation face 2b irradiation ultraviolet radiation, utilizes by the removed object 3 of cleaning surface 2a being removed to free radical activity kind produced by Ozone Water irradiation ultraviolet radiation. The free radical activity kind produced is mainly the oxygen-derived free radicals of the reaction generation shown in following (1) formula and the hydroxyl radical free radical of the reaction generation shown in following (2) formula.
O3+h�͡�O2+O��(1)
O��+H2O��2OH��(2)
The oxidation operation of cleaning surface 2a is decomposed and removes by these oxygen-derived free radicals or hydroxyl radical free radical, equally, makes inorganic matter oxidation generate oxide and remove.
When to cleaning surface 2a ozone supply water, cleaning surface 2a exists the ozone moisture film 4 with specific thickness. Ozone molecule in this ozone moisture film 4 produces free radical activity kind by ultraviolet light degradation. The free radical activity kind produced such as makes organic removed object 3 oxidation Decomposition be carried out. Removed object 3 is owing to being attached on cleaning surface 2a, thus in the free radical activity kind produced in ozone moisture film 4, the free radical activity kind mainly produced near cleaning surface 2a contributes to the decomposition of this removed object 3 and removes.
At this, when from cleaning surface 2a side irradiation ultraviolet radiation, it is believed that scattering or refraction occur a ultraviolet part on ozone moisture film 4 surface, the ultraviolet of irradiation until the period arriving cleaning surface 2a decay. Additionally, a ultraviolet part is present in ozone moisture film 4 ozone molecule of upper section and is absorbed, the amount of ultraviolet arriving cleaning surface 2a reduces to some extent relative to the ultraviolet irradiated, thus the generating capacity of the oxygen-derived free radicals near cleaning surface 2a also has the probability of minimizing. Furthermore, a part for the free radical activity kind that upper section in ozone moisture film 4 produces is before the removed object 3 arrived on cleaning surface 2a, there is the chain reaction that free radical generates, or free radical activity kind along with Ozone Water flowing and from substrate 2 to externally drained, thus also have the probability of the removed object 3 that will not arrive on cleaning surface 2a.
In contrast, in the cleaning method of present embodiment, to the face 2b irradiation ultraviolet radiation of the opposition side of cleaning surface 2a. Therefore, the ultraviolet decay because ultraviolet causes is not had in the scattering on ozone moisture film 4 surface, reflection, refraction etc. It addition, by ultraviolet time in ozone moisture film 4 without decay. It addition, in ozone moisture film 4 produce free radical activity kind without the flowing along with Ozone Water from substrate 2 to externally drained. Therefore, compared with the situation from cleaning surface 2a side irradiation ultraviolet radiation, it is possible to carry out base-plate cleaning efficiently.
Fig. 2 indicates that the diagrammatic side view of the rinser 1 of present embodiment. Fig. 3 indicates that the diagrammatic top view of the rinser 1 of present embodiment. The rinser of present embodiment is so-called advection rinser. Rinser 1 shown in Fig. 2 has: ozone water supply portion 5, and it is to the cleaning surface 2a ozone supply water of the substrate 2 as cleaning object; With ultraviolet radiation portion 6, it is to face (hereinafter also referred to ultraviolet radiation face) the 2b irradiation ultraviolet radiation of the opposition side of the cleaning surface 2a of substrate 2. The cleaning surface 2a of substrate 2 is such as attached with the removed object such as Organic substance and inorganic matter 3.
Symbol 7 represents the conveying roller for conveying substrate 2. Conveying roller 7 is configured to carry the substrate 2 being placed on conveying roller 7 in the lower section in ozone water supply portion 5. Conveying roller 7 conveying substrate 2 in the direction of arrow A, substrate 2 is sequentially carried out cleaning by the rinser 1 arranged in the midway of transport path.
Substrate 2 have wavelength be 254nm ultraviolet specific absorbance preferably in less than 50% ultraviolet permeability. In the substrate 2, the ultraviolet transmitance of above-mentioned wavelength (254nm) is preferably more than 50%, more preferably more than 90%.
As substrate 2, as long as have the substrate of above-mentioned specific absorbance or ultraviolet ray transmissivity, just there is no particular limitation, specifically, quartz glass substrate can be used, gla s s for organic EL substrate, liquid crystal glass base, the compound semiconductor substrates such as carborundum (SiC) substrate and GaAs (GaAs) substrate, the transparent resin substrate etc. such as polyethylene terephthalate (polyethylenephthalate:PET), Merlon (PC), PEN (PEN).
In the rinser 1 of present embodiment, ozone water supply portion 5 has the Ozone Water nozzle 5b of the cleaning surface 2a ozone supply water to substrate 2. It addition, ozone water supply portion 5 has manufactures Ozone Water the Ozone Water manufacturing department 5a to Ozone Water nozzle 5b supply. Ozone Water manufacturing department 5a makes ozone dissolved manufacture Ozone Water in pure water. As Ozone Water manufacturing department 5a, it is possible to use make device that ozone gas is dissolved in pure water via air penetrating film or make ozone gas and pure water counter current contacting in packed column and allow ozone gas be dissolved in the device in pure water. Pure water is according to the kind of substrate 2 and purposes and the difference cleaning purpose, it is possible to use the pure water of suitable purity, but such as when substrate 2 be liquid crystal glass base, it may be preferred to use is converted into the pure water that resistivity is 10M more than �� cm of 25 DEG C.
The concentration of the Ozone Water manufactured by Ozone Water manufacturing department 5a is preferably 50��300ppm, more preferably 100��200ppm. It addition, effectively utilize ozone to suppress the selfdecomposition of ozone, it is preferable that in Ozone Water, add carbon dioxide etc. as selfdecomposition inhibitor.
The temperature of the Ozone Water that ozone water supply portion 5 supplies is not particularly limited, it is possible to be 15 DEG C��about 25 DEG C (room temperature). When using Ozone Water at normal temperatures, it is possible to cut down the device for cleaning and energy. It addition, Ozone Water can also heat, in this case, it is preferable to be set as 15��50 DEG C, more preferably be set as thus can obtaining the substrate surface of more sublimate at short notice in room temperature (20��30 DEG C) left and right.
As Ozone Water nozzle 5b, it is possible to use the injection nozzle spraying Ozone Water or the spray spout that Ozone Water is sprayed. Ozone Water nozzle 5b is connected with Ozone Water manufacturing department 5a by pipe arrangement. Supply to Ozone Water nozzle 5b via this pipe arrangement in the Ozone Water manufacturing department 5a Ozone Water manufactured. The Ozone Water of supply supplies from Ozone Water nozzle 5b to cleaning surface 2a. Ozone Water nozzle 5b preferably has pressue device, and in the case, Ozone Water can be pressurizeed and be supplied to cleaning surface 2a by pressue device. Flow velocity to the Ozone Water of cleaning surface 2a supply is preferably about 0.5��5m/s, thus, it is possible to improve cleaning efficiency.
It addition, ozone water supply portion 5 preferably has ultrasound wave bringing device. In the case, ultrasound wave bringing device applies ultrasound wave to Ozone Water, thus Ozone Water nozzle 5b will be applied with hyperacoustic Ozone Water and supply to cleaning surface 2a. Hyperacoustic frequency is preferably more than 30kHz, more preferably 100��2,000kHz, and more preferably 700��1,500kHz. Applying, in hyperacoustic situation, to promote the generation of free radical activity kind to Ozone Water, such that it is able to improve cleaning performance.
In the rinser 1 of present embodiment, the ultraviolet of the wavelength comprising 250��260nm is irradiated to face (hereinafter also referred to the ultraviolet radiation face) 2b of the opposition side of the cleaning surface 2a of substrate 2 in ultraviolet radiation portion 6. The ultraviolet including at least wavelength 254nm is preferably irradiated in ultraviolet radiation portion 6. The ultraviolet of wavelength 250��260nm, the particularly ultraviolet of wavelength 254nm are compared with the luminous ray of other wavelength or even ultraviolet, and the absorbance absorbed by the ozone molecule in pure water is higher. Therefore, by irradiating the ultraviolet comprising above-mentioned preferred wave-length coverage, it is possible to promote the reaction of formation of the free radical activity kind shown in above-mentioned formula (1), (2). As a result, it is possible to effectively remove removed object 3.
Ultraviolet radiation portion 6 is advisable with the ultraviolet of at least illumination wavelength 250��260nm, the not only ultraviolet of above-mentioned wavelength, and the light of luminous ray beyond the ultraviolet of the wavelength except 250��260nm of the scope of 220��400nm, ultraviolet of ultraviolet near 185nm of the light of wavelength in addition, such as wavelength, wavelength and ultrared wavelength region can also irradiate. In the case, the region of the peak luminous wavelength of the light that ultraviolet radiation portion 6 is irradiated is not particularly limited, but preferably at least has peak luminous wavelength in the scope of 250��260nm.
As the light source in ultraviolet radiation portion 6, as long as the ultraviolet producing above-mentioned wavelength does not just limit, for instance low pressure mercury lamp, high-pressure mercury-vapor lamp, vacuum UV lamp, xenon lamp, light emitting diode (LED) etc. can be used. The generation concentration (growing amount) of free radical activity kind is produced large effect by the ultraviolet radiation illumination in ultraviolet radiation portion 6, it is preferable that can with the low light source of stable illumination irradiation ultraviolet radiation, luminescent lifetime length and operating cost. As such light source, it is preferred to use low pressure mercury lamp. It addition, such as when substrate 2 is large substrate, consider from the angle of the uniformity of the part to the ultraviolet illumination that substrate 2 irradiates and the miniaturization of rinser, it is preferred to use LED. LED is also excellent due to the rectilinearity of luminescent lifetime length and irradiation light, can also reduce operating cost thereby through using LED.
In order to remove removed object 3 efficiently, the ultraviolet illumination that ultraviolet radiation portion 6 is irradiated is preferably 2��20mW/m2, more preferably 3��8mW/m2. It is attached to the removed object 3 on the cleaning surface of substrate 2 by decomposing under the effect of free radical activity kind produced by Ozone Water irradiation ultraviolet radiation, is removed thereby through being dissolved in Ozone Water.
Suitable setting can be carried out according to the concentration of the specific absorbance of substrate 2 and Ozone Water, kind of light source of using etc. from the light source in ultraviolet radiation portion 6 to the distance of ultraviolet radiation face 2b. Considering in atmosphere, square being inversely proportional to of ultraviolet illumination and distance from light source, this distance is such as set as below hundreds of mm, it is preferable that be set as 5��20mm. Thus, as long as luminescence-utraviolet illumination is 2��20mW/m2The ultraviolet light source of left and right, it is possible to be 3mW/m by the ultraviolet illuminance setting of cleaning surface 2a2Above, cleaning efficiency thus can be made to be improved.
Rinser 1 according to present embodiment, by ultraviolet radiation portion 6 is configured at the 2b side, face of the opposition side of the cleaning surface 2a of substrate 2, just can be arranged on ultraviolet radiation portion 6 between multiple conveying roller 7. Therefore, it can make rinser 1 miniaturization. Furthermore, by ultraviolet radiation portion being arranged on the 2b side, face of the opposition side of cleaning surface 2a, just can reduce the light source in ultraviolet radiation portion 6 and the distance of glass substrate 2, thus ultraviolet radiation efficiency can be improved. Additionally, when ultraviolet radiation portion 6 is arranged on above substrate 2, for instance ozone water droplet splash and with ultraviolet radiation portion 6 light source contacts, it is possible to there is the damaged accident of the light source in ultraviolet radiation portion 6, in the case, it is possible to make substrate 2 that breakage to occur. In contrast, in the rinser 1 of present embodiment, ultraviolet radiation portion 6 is arranged on the lower section of substrate 2, thus easily takes waterproof measure.
It addition, when ultraviolet radiation portion 6 is arranged at above cleaning surface 2a, in order to prevent the attachment of ozone water droplet, for instance be sometimes also adopted by quartz glass protection of pipe ultraviolet light source. Quartz glass tube and substrate 2 distance near time, comprise cleaned organic water-drop sputtering during cleaning and be attached on quartz glass tube, the water droplet of this attachment falls on a substrate 2 again, it is possible to substrate 2 recontamination. In contrast, in the rinser 1 of present embodiment, ultraviolet radiation portion 6 is arranged on the lower section of substrate 2, because of without there being such worry. Furthermore, in the rinser 1 of present embodiment, ultraviolet radiation portion 6 is arranged on the lower section of substrate 2, thus compared with the situation of the top that ultraviolet radiation portion 6 is arranged on substrate 2, the power being used for keeping ultraviolet radiation portion 6 can also be less. Therefore, it can make device constitute and become simple.
Referring next to Fig. 4, the cleaning method of the rinser of present embodiment is just used to illustrate. The cleaning method of the present embodiment shown in Fig. 4 has following operation: keep the operation S100 of described substrate, to the operation S200 of the cleaning surface ozone supply water of the described substrate kept, and irradiate the ultraviolet operation S300 of the wavelength comprising 250��260nm with Ozone Water to the face of the opposition side of the cleaning surface 2a of described substrate when the cleaning surface making described substrate contacts.
The cleaning of substrate using the rinser 1 of present embodiment adopts following method to carry out. First, on conveying roller 7, mounting maintenance are as the substrate 2 of cleaning object, make conveying roller 7 work and conveying substrate 2. Then, on the cleaning surface 2a of the substrate of conveying, at operation S200 from Ozone Water nozzle 5b ozone supply, while in operation S300 employing ultraviolet radiation portion 6 from 2b side, ultraviolet radiation face irradiation ultraviolet radiation. Now, the ozone water supply flow of Ozone Water nozzle 5b depends on the area of the substrate 2 as cleaning object, but considers from the angle of cleaning performance, it is preferable that relative to every 1m2It is 40��400L/min, more preferably relative to every 1m2It is 100��400L/min.
In addition, in the above-described embodiment, conveying roller 7 loads and keeps substrate 2, as long as but substrate 2 is when to cleaning surface 2a ozone supply water, ultraviolet mode can irradiate from above-mentioned wavelength to the face of the opposition side of cleaning surface 2a keeps, and just there is no particular limitation for the mode of the maintenance of substrate 2 and method.
The cleaning of the substrate in rinser 1 both can adopt batch (-type) to carry out, it would however also be possible to employ continuous way carries out. When small-sized substrate is carried out, it is preferred to use batch (-type) carries out.
The cleaning method of the present invention is with energy-saving, cost degradation, has the cleaning method that high cleansing power is feature, especially by the cleaning of the liquid crystal glass base bigger suitable in cleaning area, it is possible to play bigger effect. Particularly in recent years, the maximization of liquid crystal glass base clearly, thus for the shortening of the uniformity cleaned and scavenging period, advection cleans is becoming main flow. The effect of the present invention is not only limited in advection cleaning method, go for the spray process adopting spray etc. to make cleanout fluid flow through, the rotary-cleaning method supplying cleanout fluid on the substrate rotated, substrate is immersed in the known all cleaning methods using cleanout fluid equipped with dipping ablution and their combination etc. in the batch (-type) maceration tank of cleanout fluid, no matter it is which kind of cleaning method, all with present embodiment it is also possible to obtain the raising effect of cleaning efficiency. It addition, by above-mentioned each cleaning method and with the physical cleaning of use sponge (wiping) etc., it is also possible to improve cleaning efficiency further.
As it has been described above, the rinser according to present embodiment, compared with the former cleaning method using dense medicine and cleanout fluid, it is possible to alleviate drainage sunk well load and carrying capacity of environment, simplify thus device can also be made to constitute. Therefore, the cleaning efficiency of substrate can be improved by Ozone Water.
Embodiment
Then, embodiment is illustrated.
(embodiment 1)
As cleaned material, use and be sized to long 50mm �� wide 50mm �� thickness 0.7mm, be the liquid crystal glass base that ultraviolet transmitance is 99% of 254nm to wavelength. To the cleaning surface of this substrate with the flow of 1L/min (relative to every 1m2For 400L/min) supply the Ozone Water that concentration is 100ppm, simultaneously from from the lower section that glass substrate is 10mm with 3.8mW/m2Ultraviolet illumination to the face illumination wavelength of the opposition side of cleaning surface ultraviolet near 254nm. As ultraviolet lamp, use low pressure mercury lamp AY-11 (trade name, Japan Off �� �� �� �� �� Application �� (strain) company produces).
Adopt contact angle meter PG-X (trade name, (strain) �� Star �� company produces) that the water contact angle on the liquid crystal glass base surface after the water contact angle on the liquid crystal glass base surface before cleaning and scavenging period 0 second, 30 seconds, 60 seconds, 180 seconds, 300 seconds, 600 seconds has been measured. The measurement result of water contact angle is as shown in table 1. Water contact angle is more little, is attached to the Organic substance on liquid crystal glass base more few, represents and more can be carried out more well. It addition, the wavelength characteristic of the low pressure mercury lamp used is as shown in Figure 5.
(comparative example 1)
In embodiment 1, from cleaning surface side irradiation ultraviolet radiation, in addition, similarly to Example 1 when, carry out the cleaning of liquid crystal glass base, and determine the water contact angle on liquid crystal glass base surface over time. Result is as shown in table 1.
(comparative example 2)
In embodiment 1, not irradiation ultraviolet radiation and be carried out, in addition, similarly to Example 1 when, carry out the cleaning of liquid crystal glass base, and determine the water contact angle on liquid crystal glass base surface over time. Result represents in Table 1 in the lump.
(comparative example 3)
In comparative example 1, ultrasound wave is applied from the Ozone Water of Ozone Water nozzle 5b supply to using fine spray (PT-010J50 (�� �� �� �� Network company produce)), in addition, same with comparative example 1 when, carry out the cleaning of liquid crystal glass base, and determine the water contact angle on liquid crystal glass base surface over time. Result is as shown in table 1. Comparative example 3 only shows the cleaning performance substantially equal with comparative example 2. This shows that ultraviolet is reflected by ozone moisture film, thus the effect of ultraviolet radiation is not exhibited by by ozone moisture film is applied vibration.
Table 1
By distinguishing above: by the ultraviolet of illumination wavelength 250��260nm, cleaning efficiency is improved, especially when the face irradiation ultraviolet radiation of the opposition side from the cleaning surface of liquid crystal glass base, compared with situation about irradiating from cleaning surface side, it is possible to make contact angle reduce at short notice, namely carry out good cleaning at short notice.
Symbol description:
1 rinser 2 substrate
2a cleaning surface 2b ultraviolet radiation face
3 cleaned material 4 ozone moisture films
5 ozone water supply portion 5a Ozone Water manufacturing department
5b Ozone Water nozzle 6 ultraviolet radiation portion
7 conveying rollers
Claims (12)
1. the rinser of a ultraviolet permeability substrate, it is characterised in that the rinser of described ultraviolet permeability substrate has:
Ozone water supply portion, it is to the cleaning surface ozone supply water of described substrate; And
Ultraviolet radiation portion, it irradiates the ultraviolet of the wavelength comprising 250��260nm when to the cleaning surface ozone supply water of described substrate to the face of the opposition side of the cleaning surface of described substrate.
2. the rinser of ultraviolet permeability substrate according to claim 1, it is characterised in that described ozone water supply portion has the Ozone Water nozzle supplying described Ozone Water to described cleaning surface.
3. the rinser of ultraviolet permeability substrate according to claim 1 and 2, it is characterised in that described rinser has the Ozone Water manufacturing department manufacturing Ozone Water and supplying to described ozone water supply portion.
4. the rinser of ultraviolet permeability substrate according to claim 1 and 2, it is characterised in that from the light source in described ultraviolet radiation portion to the distance in the face of the opposition side of the cleaning surface of described substrate be 5��20mm.
5. the rinser of ultraviolet permeability substrate according to claim 1 and 2, it is characterised in that described ultraviolet radiation portion has more than a kind among low pressure mercury lamp, Excimer lamp and LED.
6. the rinser of ultraviolet permeability substrate according to claim 1 and 2, it is characterised in that wavelength is that the ultraviolet specific absorbance of 254nm is below 50% by described substrate.
7. the rinser of ultraviolet permeability substrate according to claim 1 and 2, it is characterised in that described substrate is liquid crystal glass base.
8. the cleaning method of a ultraviolet permeability substrate, it is characterised in that the cleaning method of described ultraviolet permeability substrate has following operation:
Keep the operation of described substrate;
Operation to the cleaning surface ozone supply water of the described substrate kept; And
Irradiate the ultraviolet operation of the wavelength comprising 250��260nm with Ozone Water to the face of the opposition side of the cleaning surface of described substrate when the cleaning surface making described substrate contacts.
9. the cleaning method of ultraviolet permeability substrate according to claim 8, it is characterised in that the ozone concentration of described Ozone Water is more than 50ppm.
10. the cleaning method of ultraviolet permeability substrate according to claim 8 or claim 9, it is characterised in that the temperature of described Ozone Water is 15 DEG C��50 DEG C.
11. the cleaning method of ultraviolet permeability substrate according to claim 8 or claim 9, it is characterised in that wavelength is that the ultraviolet specific absorbance of 254nm is below 50% by described substrate.
12. the cleaning method of ultraviolet permeability substrate according to claim 8 or claim 9, it is characterised in that described substrate is liquid crystal glass base.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013241894 | 2013-11-22 | ||
| JP2013-241894 | 2013-11-22 | ||
| PCT/JP2014/005811 WO2015075922A1 (en) | 2013-11-22 | 2014-11-19 | Uv-transmitting-substrate cleaning device and cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105637619A true CN105637619A (en) | 2016-06-01 |
Family
ID=53179207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480056479.9A Pending CN105637619A (en) | 2013-11-22 | 2014-11-19 | Uv-transmitting-substrate cleaning device and cleaning method |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2015075922A1 (en) |
| KR (1) | KR20160088283A (en) |
| CN (1) | CN105637619A (en) |
| TW (1) | TW201534409A (en) |
| WO (1) | WO2015075922A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106405926A (en) * | 2016-11-30 | 2017-02-15 | 武汉华星光电技术有限公司 | Preparation method of colour filter |
| CN107159666A (en) * | 2017-06-04 | 2017-09-15 | 杜耀均 | A kind of method of utilization ozone clean glass |
| CN108919565A (en) * | 2018-06-29 | 2018-11-30 | 张家港康得新光电材料有限公司 | A kind of cleaning method of electro-conductive glass |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015011229B4 (en) * | 2015-08-27 | 2020-07-23 | Süss Microtec Photomask Equipment Gmbh & Co. Kg | Device for applying a liquid medium exposed to UV radiation to a substrate |
| DE102015011177B4 (en) * | 2015-08-27 | 2017-09-14 | Süss Microtec Photomask Equipment Gmbh & Co. Kg | Device for applying a liquid medium exposed to UV radiation to a substrate |
| DE102015011228B4 (en) | 2015-08-27 | 2017-06-14 | Süss Microtec Photomask Equipment Gmbh & Co. Kg | Device for applying a liquid medium exposed to UV radiation to a substrate |
| KR20180016064A (en) * | 2016-08-05 | 2018-02-14 | 무진전자 주식회사 | Method and apparatus for cleaning a surface of asemiconductor wafer |
| KR101961326B1 (en) | 2016-10-19 | 2019-07-18 | 세메스 주식회사 | Method and Apparatus for cleaning component of apparatus for treating substrate |
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| JP2000070885A (en) * | 1998-09-01 | 2000-03-07 | Ultla Clean Technology Kaihatsu Kenkyusho:Kk | Device and method for cleaning substrate |
| EP2177278A1 (en) * | 2007-08-16 | 2010-04-21 | Asahi Glass Company, Limited | Substrate cleaning apparatus and method of cleaning substrate |
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|---|---|---|---|---|
| JPH05182945A (en) | 1991-12-27 | 1993-07-23 | Hitachi Ltd | Cleaning equipment |
| JP2727481B2 (en) | 1992-02-07 | 1998-03-11 | キヤノン株式会社 | Cleaning method for glass substrate for liquid crystal element |
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2014
- 2014-11-19 TW TW103140065A patent/TW201534409A/en unknown
- 2014-11-19 WO PCT/JP2014/005811 patent/WO2015075922A1/en active Application Filing
- 2014-11-19 KR KR1020167006804A patent/KR20160088283A/en not_active Withdrawn
- 2014-11-19 JP JP2015548988A patent/JPWO2015075922A1/en active Pending
- 2014-11-19 CN CN201480056479.9A patent/CN105637619A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000070885A (en) * | 1998-09-01 | 2000-03-07 | Ultla Clean Technology Kaihatsu Kenkyusho:Kk | Device and method for cleaning substrate |
| EP2177278A1 (en) * | 2007-08-16 | 2010-04-21 | Asahi Glass Company, Limited | Substrate cleaning apparatus and method of cleaning substrate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106405926A (en) * | 2016-11-30 | 2017-02-15 | 武汉华星光电技术有限公司 | Preparation method of colour filter |
| CN107159666A (en) * | 2017-06-04 | 2017-09-15 | 杜耀均 | A kind of method of utilization ozone clean glass |
| CN108919565A (en) * | 2018-06-29 | 2018-11-30 | 张家港康得新光电材料有限公司 | A kind of cleaning method of electro-conductive glass |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015075922A1 (en) | 2015-05-28 |
| TW201534409A (en) | 2015-09-16 |
| KR20160088283A (en) | 2016-07-25 |
| JPWO2015075922A1 (en) | 2017-03-16 |
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Application publication date: 20160601 |