CN104377311A - Hydrophobic bank - Google Patents
Hydrophobic bank Download PDFInfo
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- CN104377311A CN104377311A CN201410400892.4A CN201410400892A CN104377311A CN 104377311 A CN104377311 A CN 104377311A CN 201410400892 A CN201410400892 A CN 201410400892A CN 104377311 A CN104377311 A CN 104377311A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention relates to a hydrophobic bank. The invention provides a method for constructing an electronic device with an electric insulation bank structure. The electric insulation bank structure is provided with a side wall defining a well. The method comprises steps of forming a bank structure so as to allow the side wall to have a first slope extending from a surface layer area and a steeper second slope extending from the first slope and to allow the side wall to have a surface energy interrupt at a point where the first slope is separated from the second slope; forming a layer structure comprising at least one layer of organic semiconductive materials in solution of the material deposited in the well, wherein the deposited solution wets the first slope and the second slope till the pinning points at the surface energy interrupt; and drying the deposited solution.
Description
Technical field
The present invention relates in general to the method that structure comprises the electronic equipment of substrate, wherein substrate has cofferdam (bank) structure superficial layer and described superficial layer limiting well, and this electronic equipment comprises the substrate having and superficial layer and described superficial layer limit the cofferdam structure of well.
Background technology
Extensively investigated for the manufacture of electronic equipment, relate to method (solution processing) from liquid deposition active component.If active component is from liquid deposition, then active component preferably is contained in the desired region of substrate.This can realize by providing the substrate of the cofferdam layer comprising the patterning limiting well, and active component can from liquid deposition described well.Well comprises solution when just drying, and is retained in the region of the substrate limited by well to make active component.
Have been found that these methods are for being useful especially from liquid deposition organic material.Organic material can be conduction, semiconductive, and/or photoelectric activity, can detect light to make them at electric current by utilizing emitted light time them or by generating electric current when light strikes on them.The equipment of these materials is used to be called as organic based device.If organic material is light-emitting material, then equipment is called as organic light emitting devices (OLED).In addition, solution processing achieves thin-film transistor (TFT) and the especially low cost of OTFT (OTFT), low temperature manufacture.In such a device, be desirably in suitable region especially and comprise organic semiconductor (OSC) in the passage of especially equipment, and the cofferdam limiting well can be provided, to comprise OSC.
Some equipment may need more than single liquid deposition layer.It can be luminous material layer that typical OLED (OLED such as used in the display) can have two-layer organic semiconductor Cai Liao – one, such as light emitting polymer (LEP), and another layer can be hole transporting material, such as polythiofuran derivative or polyaniline derivative.
Advantageously, simple cofferdam structure has the homogenous material/layer being designed to comprise all liquid that this type of is deposited successively.But, utilize the liquid for all depositions to have the equipment of single bank material and single pinning point, between the electrode of liquid deposition layer either side, there is the risk of electric leakage paths or short circuit.Such as, in the OLED structure comprising anode-HIL-IL-EL-cathode construction, leakage current can through flowing at the borderline leakage paths of HIL between the anode and cathode.Similarly, leakage paths can directly be contacted by negative electrode and device stack very thin on hole injection layer on cofferdam (HIL), cofferdam or the point contact being in pinning point and be caused.When being reversed driving and/or before turn, JV (Current density-voltage) curve of the equipment printed completely such as can show high-leakage (high electric current).By spin coating (spun) intermediate layer (IL) and electroluminescence layer (EL), leak much lower, because HIL is covered completely by the film of spin coating atop.Much lower efficiency can be caused.
Current low leakage equipment needs two weir system usually, to be separated anode pinning point and negative electrode.But compared with the architectural framework of two cofferdam, single cofferdam can reduce complexity.Additionally or as an alternative, the single cofferdam having utilized photolithographic patterning can provide cheap method for pixel (cofferdam) limits.But this cofferdam can allow anode region be exposed to hydrocarbon (resist residue), and/or provides single fluid pinning point for the manufactured layer of all solution (HIL, IL and EL).The HIL of high connductivity adds the short path length between Anodic (ITO) surface and the consistent pinning point of HIL-IL-EL-negative electrode, has been proved to be and has caused high-leakage equipment.
Similarly, the light-emitting device with cofferdam structure may have poor color homogeneity and/or light emission effciency in whole active region.
Thus, expect to be provided for making different liquids be included in the modified node method in well and/or the technique for constructing this structure.Especially, the structure improved can have such as any one or more advantage following: the color homogeneity of the improvement in whole equipment, lower and/or tunable electricity leaks, the overall power efficiency of the improvement in whole equipment active region and/or efficiency uniformity, the lifetime stability improved (such as, launch about OLED) (preferably, such as, more stable and/or more repeatably device illumination in life test), compacter equipment, and the structural complexity reduced and/or the ability that utilizes less processing step to construct (wherein any one all can produce time or the cost efficiency of the improvement of device fabrication, the equipment output improved, repeatable, about the demand of the volume of constituent material and/or the reduction of quantity, this can such as cause cost to reduce).
In order to use understanding in the present invention, refer to following discloses content:
-US8,063,551 (Du Ponts);
-US2006/197086 (Co., Ltd of Samsung);
-US2010/271353 (Sony);
-WO2009042792 (inventor Tsai Yaw-Ming A etc.);
-US2007/085475 (semiconductor energy laboratory);
-US7799407 (Seiko Epson company);
-US7604864(Dainippon Screen MFG)；
-WO9948339 (Seiko Epson company);
-JP2007095425A (Seiko Epson company);
-WO2009/077738 (in the PCT/GB2008/004135 that on June 25th, 2009 announces, inventor Burroughes and Dowling); And
-WO2011/070316 A2 (in the PCT/GB2010/002235 that on June 16th, 2011 announces, inventor Crankshaw and Dowling).
Summary of the invention
According to a first aspect of the invention, provide the method that structure comprises the electronic equipment of substrate, wherein substrate has cofferdam structure superficial layer and described superficial layer limiting well, cofferdam structure comprises electrical insulating material and has the sidewall in the region surrounding described superficial layer, limit this well thus, surface region layer comprises the first electrode, and this equipment also comprises the second electrode and the semiconductive material between the first electrode and the second electrode, the method comprises: form the described cofferdam structure with described sidewall, described sidewall comprises the first slope extended from described surface region layer and the second slope extended from the first slope, wherein the second slope is steeper than the first slope, wherein the some place of sidewall on the second slope separated with the first slope has surface energy and interrupts, form the Rotating fields with at least one deck, this Rotating fields to be configured between the first electrode and the second electrode and to have semiconductive material, wherein form Rotating fields to comprise: on surface region layer and on the first slope of sidewall and the second slope, deposit organic solution, to form the described layer of solution processable, wherein deposited organic solution soaks the first slope and the second slope until at the pinning point of surface energy interruptions, and dry the organic solution deposited.
Thus, the pinning point that embodiment can be provided at least one solution processable layer is (preferably multiple, all peg at same point), to make pinning point and surface region layer be separated by a paths, this path deviates from straight line owing to having different slopes along its whole length.This can reduce the risk producing electric leakage paths or short circuit between electrode (such as, the anode of liquid deposition layer either side and negative electrode).Such as, in the OLED structure comprising anode-HIL-IL-EL-cathode construction, any leakage paths between the anode and negative electrode on the border of preferred higher resistive (highly resistive) HIL all increases.The path lengthened preferably has sufficiently high resistance, to prevent the leakage likely making such as efficiency, reliability and/or life-span, color change etc. significantly demote in other situation.
More specifically consider resultant device structure, should be noted that: surface energy interrupt preferably through soak (such as, hydrophilic) and do not soak produce between (such as, hydrophobic) region border processing step generation.This border is preferably at the top on the second slope.The top on the second slope is preferably adjacent with the flat surfaces of cofferdam structure, and this flat surfaces is relative with superficial layer and parallel.In any case, surface energy interrupts all preferred away from the first slope and therefore away from surface region layer.
The method can be included on solution processable layer and deposit the other solution of at least one, such as, EL (luminescent layer) and/or IL (intermediate layer), the solution that wherein this at least one is other soaks pinning point always, and dries the other solution of this at least one of depositing.Thus, multiple this solution processable layer can have identical pinning point.
Can also the method be provided, wherein form cofferdam structure and comprise: on the superficial layer of substrate, form the first cofferdam layer comprising photoresist; Photo-patterning is carried out to the first cofferdam layer and develops, with the region of exposed surface layer; Photoresist agent solution depositing fluorinated on the exposed region of the first cofferdam layer and superficial layer, to form the second cofferdam layer; Dry hard, with second cofferdam layer that hardens, the fluorochemical wherein fluoridizing photoresist agent solution moves to the surface of the second cofferdam layer, to increase the contact angle on organic solution and described surface in described baking hard period; And photo-patterning is carried out to the second cofferdam layer and develops, the region of the first cofferdam layer is exposed with the described region of exposed surface layer again, thus make the first cofferdam layer region have the first slope and the second cofferdam layer has the second slope, wherein increased contact angle is higher than the contact angle on organic solution and the first slope and the second slope, and pinning point is in the border on the second cofferdam layer surface with the fluorochemical moved.Dry the surface that moves to of hard period compound generally can be described to " Free Surface ", namely with the interface of external environment condition (such as air).Just as thisly fluoridizing in any embodiment of photoresist utilizing, photoresist can be provided as by photoresist manufacturer to be fluoridized, or this technique can have fluorochemical is added to the additional step not fluoridizing photoresist.In any case, after the second cofferdam layer sclerosis, the second cofferdam layer all preferably includes the fluorochemical than the first cofferdam layer higher concentration.In addition, after the second cofferdam layer development is with the part removing the second cofferdam layer, be that part of " Free Surface " part preferably has the border of soaking/not soaking, wherein the edge of the second cofferdam layer exposes by removing, and this edge is the part of sidewall before.Thus, except double slanted sidewall, pinning point can also be created.
The method can also be provided, wherein form cofferdam structure to comprise: dry the solution that deposits and form cofferdam structure layer by photoresist agent solution depositing fluorinated on superficial layer with the cofferdam structure layer that hardens, the fluorochemical wherein fluoridizing photoresist agent solution moves to the surface of cofferdam structure layer, to increase the contact angle on organic solution and described surface in described baking hard period; Cofferdam structure layer deposit and dries photoresist oxidant layer, and photo-patterning carried out to photoresist oxidant layer and develops; Dry etching steps, etches cofferdam structure layer for the photoresist oxidant layer by being developed, and with exposed surface layer region, thus makes the cofferdam structure layer that etched have the sidewall of the surface region layer surrounding exposure and comprise the first slope and the second slope; And remove the photoresist oxidant layer be developed, to expose the surface of cofferdam structure layer, the surface exposed comprises the described fluorochemical moved, and wherein surface energy interrupts being in the interface between exposed surface and the sidewall that etched comprising the fluorochemical moved.Dry etching steps can comprise reactive ion etching, preferably uses oxygen plasma.With similar above, be that the part of cofferdam layer " Free Surface " part preferably has the border of soaking/not soaking, wherein the edge of cofferdam layer exposes due to the removal part of the cofferdam layer that develops, and this edge is the part of sidewall before.Thus, except double slanted sidewall, pinning point can also be created.
Also can also provide the method, wherein form cofferdam structure to comprise: carry out development and photo-patterning to cofferdam structure layer, to expose by the surface region layer of the side walls enclose of cofferdam structure layer, wherein deposit on cofferdam structure layer on cofferdam structure layer that photoresist oxidant layer is included in photo-patterning and deposit photoresist agent solution, and development is carried out to photoresist oxidant layer and comprises exposed surface layer region again, and the dry etching steps of exposed surface layer region extends the region of exposure by thinning cofferdam structure layer, form described first slope and the second slope thus.
The method can also be provided, wherein: photo-patterning is carried out to photoresist oxidant layer and comprises the photic resist layer of mask radiation by having substantially not regional transmission, fractional transmission region and regional transmission (at least there is the transmissivity larger than fractional transmission region) completely substantially; And photoresist oxidant layer is developed the region that comprises and remove photoresist completely and partly remove the photoresist region being exposed to radiation by part regional transmission.
Also can also provide the method, wherein form cofferdam structure and comprise: form cofferdam layer by photoresist agent solution depositing fluorinated on superficial layer; Dry firmly, with the cofferdam layer that hardens, wherein the fluorochemical of photoresist agent solution moves to the surface of cofferdam layer in described baking hard period, increases organic solution and surperficial contact angle thus; Carry out photo-patterning to the cofferdam layer hardened, this photo-patterning comprises with the first area of the first radiation dose radiation cofferdam layer and with the second area of second this cofferdam layer of radiation dose radiation, described second radiation dose is less than the first radiation dose; Cofferdam layer is developed, with the region of exposed surface layer and the region of the cofferdam layer partly removed with described second radiation dose radiation, thus, this part removing step provides to surround and is exposed region and has the sidewall on the first slope and the second slope, and wherein pinning point is in the border between cofferdam layer surface and sidewall with the fluorochemical moved.Depend on and use negative photoresist or positive photoresist, first area can on surf zone or on the cofferdam structure part that will retain.The preferred thinning of part removal step extends to the region of the cofferdam layer of surface region layer, also to provide supporting structure along the longer path at the solution processable layer edge that will be deposited in well thus to along sidewall.
The method can also be provided, wherein: photo-patterning comprises simultaneously by the first mask and the second mask radiation cofferdam layer, wherein comprise the complete regional transmission radiation first area by the first mask and the second mask with the first dose first area, and comprise by each at least part of regional transmission radiation second area in the middle of the first mask and the second mask with the second dose second area.At least part of regional transmission can comprise the complete regional transmission of the first mask and/or the fractional transmission region of the second mask.In these regions, at least one preferably has the fractional transmission region of Transmission Gradient.
The method can also be provided, wherein: photo-patterning comprises the mask radiation cofferdam layer by having fractional transmission region and more (be preferably complete) regional transmission, wherein comprise the area radiation first area by transmission more with the first dose first area, and comprise by part regional transmission radiation second area with the second dose second area.
Also can also provide the method, deposition of reflective device layer on the region being included in superficial layer, wherein: the step of depositing fluorinated photoresist agent solution will fluoridize liquid deposition on reflector layer and on superficial layer; And photo-patterning comprises by mask radiation cofferdam layer, wherein radiation first area comprises first area and absorbs that the part and absorbing of the first dosage directly received by mask is received from the first mask and reflected back into the part of the dosage first area by reflector layer.
Can also provide the method, wherein electronic equipment is the optoelectronic device of such as light-emitting device or light absorber device, preferably such as organic photovoltaic equipment (OPV; Such as, solar cell) light absorber device, or the light-emitting device of such as Organic Light Emitting Diode (OLED).As an alternative, equipment can be thin-film transistor.
Also can also provide the method, wherein electronic equipment is Organic Light Emitting Diode and organic solution provides hole injection layer (HIL) with national defence expenditure.In addition, at least another solution processable layer and can be formed on this solution processable layer between the first electrode and the second electrode, and another solution processable layer is used for providing intermediate layer (IL) and/or light-emitting layer (EL) respectively.
Can also provide the method, wherein, time at least one in the middle of the second sloped region being deposited over the first slope and extending to pinning point from the first slope, the contact angle of organic solution is 10 ° or less.This contact angle generally makes surface soak well.
Can also provide the method, wherein, when the region being deposited over the cofferdam structure extended away from the first slope from pinning point, the contact angle of organic solution is preferably 50 ° or larger.This contact angle does not generally make surface soak well, that is, do not soak.
According to a second aspect of the invention, provide the electronic equipment comprising substrate, this substrate has cofferdam structure superficial layer and described superficial layer limiting well, cofferdam structure comprises electrical insulating material and has the sidewall in the region surrounding described superficial layer, limit well thus, this surface region layer comprises the first electrode, and the semiconductive material that this equipment also comprises the second electrode and is configured between the first electrode and the second electrode, wherein: sidewall has the first slope extended from surface region layer and the second slope extended from the first slope, wherein the second slope is steeper than the first slope, and this equipment comprises the Rotating fields with at least one deck, layer described at least one is solution processable layer, this Rotating fields has semiconductive material and is configured between the first electrode and the second electrode, wherein: the some place of solution processable layer described at least one on the second slope separated with the first slope has pinning point, described solution processable layer is configured on surface region layer and on the first slope of sidewall and the second slope.
Thus, with for first aspect similarly, embodiment can be provided for the pinning point of (one or more) solution processable layer, and pinning point and surface region layer are separated by a paths, and this path deviates from straight line owing to having different slopes along its whole length.This can reduce the risk producing electric leakage paths or short circuit between electrode (such as, the anode of liquid deposition layer either side and negative electrode) equally.Such as, any leakage paths between the anode and negative electrode on the border of preferred higher resistive HIL is all lengthened out, to have sufficiently high resistance, thus prevent the leakage likely making remarkable degradation such as such as efficiency, reliability and/or life-span, color change etc. in other situation.
More specifically consider device structure, should be noted that: superficial layer can comprise one of them electrode (such as, anode) and/or part reflector layer.For bottom emission apparatus embodiments, superficial layer (such as, the tin-oxide of such as tin indium oxide (ITO)) and substrate (such as, glass) are preferably transparent at least partly.The independent sub-layer (such as silver layer) of superficial layer can provide above-mentioned part reflector layer, this part reflector layer can be arranged to form optical cavity, or, specifically, formation can have abundant undersized microcavity, to make the observable quantum effect causing narrower emission spectrum from light-emitting device.For the equipment of reflector layer comprising this such as Ag, the structure of equipment can comprise: code-pattern Ag (alloy) deposits; Code-pattern ITO deposits; The patterning of ITO, to form at least one electrode; Cofferdam spin coating; Then be cofferdam patterning.As an alternative, the electrode layer of superficial layer also can play the function of this part reflector layer.
Electronic equipment can also be provided, wherein, when be deposited over the first slope and extend to from the first slope pinning point the second slope region in the middle of at least one time, the contact angle for the formation of the solution of the solution processable layer be configured on surface region layer is 10 ° or less.Additionally or as an alternative, when solution deposits at the surf zone of the cofferdam structure extended away from the first slope from pinning point, the contact angle for the formation of the solution of the solution processable layer be configured on surface region layer is 50 ° or larger.Thus, this solution not only can have 10 ° or less contact angle but also can have 50 ° or larger contact angle.
Can also provide electronic equipment, wherein cofferdam structure comprises at least one photoresist oxidant layer.
Can also provide electronic equipment, wherein said photoresist oxidant layer has the point on the second slope and comprises fluorochemical.
Can also provide electronic equipment, wherein cofferdam structure comprises multiple photoresist oxidant layer, and described photoresist oxidant layer has the first slope.
Also can also provide electronic equipment, wherein cofferdam structure comprises the described photoresist oxidant layer and the first slope and the second slope with fluorochemical.
Also can also provide electronic equipment, wherein the first Slope Facies has the oblique angle being less than or equal to 20 degree for superficial layer, is more preferably and is less than 5,10 or 15 degree.This angle can be along the first slope mean value and/or particularly reach the mean value in place of superficial layer on the first slope.
Electronic equipment can also be provided, wherein the first slope extends up to the cofferdam structure thickness (wherein this thickness is the difference in height relative to superficial layer) being less than 300nm at the boundary with the second slope, preferably be less than 200nm, (height thus, crossed by the first slope and/or the second slope is preferably in the scope of 100 – 150nm for place that at least one cofferdam structure thickness along 100nm to 150nm preferably in the middle of the first slope and the second slope extends; Wherein multiple layers form cofferdam structure and have respective slope, and at least one (such as the first slope) preferably crosses the height of 100-150nm).
Also can also provide electronic equipment, wherein sidewall extends from surf zone, to provide the cofferdam structure thickness of at least 300nm, and preferably at least 1 μm.Thus, the maximum height of the sidewall on superficial layer is preferably at least 300nm.In an embodiment, maximum height is advantageously enough thick, to stand dry etching steps, and such as RIE.
Also can also provide electronic equipment, wherein the first slope extends beyond the length of at least 1um along superficial layer, preferably, wherein the second slope extends beyond the length of at least 8 μm along superficial layer, preferably, wherein sidewall (at least the first slope and the second slope) extends beyond the length of at least 10 μm along superficial layer.
Can also provide electronic equipment, wherein equipment is light-emitting device, and wherein said solution processable layer comprises the organic semiconductive materials for providing hole injection layer (HIL), and preferably wherein light-emitting device is OLED.In addition, solution processable layer described at least one can comprise the another kind of organic semiconductive materials be configured at for providing on the material of HIL, and wherein this another kind of organic semiconductive materials is for providing intermediate layer (IL) or light-emitting layer (EL).
When electronic equipment is the light-emitting device of such as OLED, preferably one of the first electrode layer and the second electrode lay (what Yi – first electrode layer or the second electrode lay of Ren; If bottom emitter equipment, then be preferably the second electrode lay) be light reflection (preferably reflecting completely), and another in described electrode layer is light transmissive (if bottom emitter equipment, then preferable substrate is also transmission).This equipment preferably includes portion's dichroic reflection (preferably completely reflect) layer (preferably metal, such as silver, and/or preferably by blanket-deposited instead of patterning), this part reflection layer (such as, between substrate (preferred glass) and the first electrode layer) is arranged to the microcavity being formed and have light reflection electrode layer.This cavity can make light amplification and/or make equipment more efficient.
Preferred embodiment limits in appended dependent claims.
In the middle of the above each side of preferred embodiment, in the middle of any one or more and/or above optional feature, any one or more can combine with any arrangement mode.
Accompanying drawing explanation
In order to understand the present invention better and in order to illustrate how the present invention can realize, incite somebody to action now as an example with reference to accompanying drawing, wherein:
Fig. 1 a shows example constructions method, and wherein fluoridizing bank material, to be spun onto anode (such as ITO) upper and by photo-patterning, to provide well;
Fig. 1 b shows the use of single masks, utilizes fractional transmission region in the mask, to limit long anode-cathode distance;
Fig. 1 c shows the realization (top to middle figure) of the cofferdam pixel of the RIE patterning with short sidewall path, and, in contrast, according to the pixel (figure of foot) of embodiment providing longer path;
Fig. 1 d shows the equipment with the cofferdam formed according to the technique of Fig. 1 a or 1b;
Fig. 2 shows life-span (stabilization of equipment performance) figure;
Fig. 3 a shows double-developing technique;
Fig. 3 b shows the dual masks technique with single patterned layer;
Fig. 3 c shows single masking part transmission technique with single patterned layer;
Fig. 3 d shows the single mask process with single patterned layer utilizing reflector space and sub-threshold exposure dosage;
Fig. 4 a-4e shows the scanning electron microscope image of the support cofferdam sectional view of embodiment;
Fig. 5 shows the change HIL+IL thickness in whole equipment active region and launches CIE value;
Fig. 6 describes the elimination of the expectation on precipitous cofferdam structure border; And
Fig. 7 shows the histogram that the HIL area thickness for standard cofferdam and shallow cofferdam embodiment is measured.
Embodiment
Generally speaking, the layer of example OLED embodiment can be as follows:
Substrate, such as glass, preferably have the superficial layer comprising ITO (80nm) electrode, and have the reflector layer for the formation of microcavity alternatively, such as Ag.
HIL (hole injection layer)=by utilizing the ND3202b from Nissan chemical plant to be ink-jet printed
IL (intermediate layer)
EL (luminescent layer), comprises light emitting polymer LEP, such as green emitting polymer.
Generally speaking embodiment provides single cofferdam architectural framework, such as, has longer path, reduces leakage current thus.For OLED, this path can between anode surface (such as, ITO) and the consistent fluid pinning point of HIL-IL-EL.These longer paths along higher resistive HIL can be that any potential parasitic leakage current and/or non-emissive edge device diode produce higher resistive path.This cofferdam structure is proved to be the improvement to OLED lifetime stability.
Multiple cofferdam manufacturing process for this embodiment is studied in the following description.Such as: (i) be the hydrophobic cofferdam of development by auxiliary (secondary) pattern layers and partial reactive ion(ic) etching (RIE); (ii) there is the non-patterned hydrophobic cofferdam of the part exposure pixel edge for RIE masking layer; (iii) double-developing technique; (iv) there is the dual masks technique of single patterned layer; V () has single masking part transmission (leakage) technique of single patterned layer; And (vi) utilizes single mask process with single patterned layer of reflector space and sub-threshold exposure dosage.
The example of this type of technique can provide the hydrophobic cofferdam of the single development with part oxygen plasma etch support.Advantageously, the hydrophobic cofferdam of single development and follow-up patterning step make oxygen plasma clean ITO region and partly etch the pre-qualified amount in cofferdam.ITO and partially-etched cofferdam are preferably hydrophilic, to make HIL until the non-etching area in hydrophobic cofferdam is all soaked.A part of HIL in below, there is cofferdam until will with IL and EL share HIL pinning point.Active anode, advantageous by long and preferred equipment separates programmable distance with negative electrode, thus causes lower electricity to leak, such as, as the HIL of use higher resistive.
Thus, the single cofferdam architectural framework for OLED can improve by providing the longer path between anode surface (ITO) and anode surface and HIL-IL-EL consistent fluid pinning point of soaking.This longer path can be that any potential parasitic leakage current produces higher resistive option.Embodiment makes anode-cathode path lengthen in a controlled manner, and tunable thus, to reduce parasitic leakage current, this so can device efficiency be improved again.
Additionally or as an alternative, relative to two cofferdam architectural framework, this technique can reduce structural complexity.
Fig. 1 a shows example constructions method, the bank material (cofferdam structure layer 12) spin coating (spun) wherein fluoridized is upper and by photo-patterning to anode (superficial layer 11) (such as ITO), to provide well (well) (region see on surface region layer 13).Then, the photoresist oxidant layer 14 on bank material by photo-patterning, and performs additional technique, to remove the part in cofferdam, and lengthened insulative cofferdam support thus.This additional technique can comprise the reactive ion etching of the part for being etched through bank material.Photoresist is removed after this additional process.Thus, in the profile variations of the bank material at well edge, with the path making profile provide longer.As only by Fig. 1 a along shown by the illustrative fine rule of the first slope s1 and the second slope s2, etching creates to remove due to photoresist and the more long circuit footpath on surface 15 that exposes.
Alternative approach shown in Fig. 1 b uses single mask step, has fractional transmission region in the mask, to be defined for the anode-cathode distance of the length of cofferdam support; RIE step preferably etches the pixel edge that there is thin positive masking layer.RIE can etch pixel, and the edge of pixel is exposed to plasma due to thin masking layer.Changed the mask design size of the cofferdam pixel of development by the size of the otch relative to RIE patterning, the amount of anode-cathode distance and parasitic leakage current therefore can profit adjust in this way.This is contrary with simple photo-patterning cofferdam pixel and/or simple RIE patterning cofferdam pixel, in photo-patterning cofferdam pixel and RIE patterning cofferdam pixel, each pixel usually by the short path length provided from anode to negative electrode (blue region) and length usually can not adjust.Specifically, Fig. 1 b shows superficial layer 21, cofferdam structure layer 22, surface region layer 23, photoresist oxidant layer 24, slope s1 and s2 and surface 25.
(Fig. 1 c show the cofferdam pixel of the RIE patterning with short sidewall path structure (arrive above middle figure) and, in contrast, according to providing the pixel of the embodiment of longer path (nethermost figure)).
Fig. 1 d shows the equipment with the cofferdam formed according to process example as above, and comprises another solution processable layer L2 that solution processable layer L1 that form is HIL (hole injection layer) and form are IL (intermediate layer) and/or LEP (light emitting polymer) layer.As seen from Fig. 1 d, HIL, IL have consistent pinning point with LEP fluid.IL and/or EL layer can be covered by EIL (electron injecting layer), and EIL again and then can be covered by cathode layer.Preferably, the pinning point of this EIL not inclusion layer L1 and L2, but cover these layers and extend on the adjacent area of cofferdam structure.At shape-preserving coating (coating) EIL so that in the embodiment extended on described layer and adjacent region, cathode layer can be preferably deposited directly onto on EIL.
In view of the above, formed with the two weir system such as making anode pinning point be separated with negative electrode and contrast, embodiment provides single cofferdam structure with long insulating support.Single hydrophobic cofferdam can be used and apply follow-up Patternized technique to elongate cofferdam support.In an embodiment, ITO and cofferdam support can be hydrophilic, thus make HIL until the pre-qualified point (ink pinning point) that cofferdam becomes hydrophobic is all soaked.A part of HIL will be below until the HIL pinning point will shared with IL and LEP all will have cofferdam.By using higher resistive HIL, active anode can be separated out long (and being that equipment is programmable) distance with negative electrode.
Embodiment makes anode-cathode path increase in a controlled manner and therefore provides to reduce the tunable technique of parasitic leakage current, this generates the device illumination of more stable in life test (and can repeat).In contrast, cheap method can be provided for pixel (cofferdam) limits by standard photolithography process or more complicated but that the RIE of standard (reactive ion etching) technique is formed single cofferdam.But these two kinds of standard techniques all can leave short anode-cathode path at pixel (equipment) edge.Show: the equipment of instability when the short path length (short support) between anode (ITO) surface and the consistent pinning point of HIL-IL-EL-negative electrode finally can cause driving.
As an alternative, Fig. 1 a can be considered to the process flow embodiment in the single cofferdam shown for having long stent.This technique relates to the two step Patternized techniques for generation of long cofferdam support.Support can be controlled by auxiliary view patterning step from anode (ITO) to the length of ink pinning point, just as support the degree of depth can by control, to provide the suitable electric isolution with anode.By changing the mask design size of the cofferdam pixel of development relative to the Pixel Dimensions of slave part patterning step, the amount of anode-cathode distance (see being only illustrative fine rule) and parasitic leakage current therefore can utilize this embodiment to adjust.Usually will provide from anode-cathode short path length (<1 μm) and length usually compared with the simple optical patterning cofferdam pixel of unadjustable (except passing through cofferdam height) or simple R IE patterning cofferdam pixel with such as wherein pixel is each, this embodiment produces long stent equipment (such as, >2 μm).
Longer anode also can cofferdam is higher to be realized by making to cathode distance, but this generally will have adverse effect at pixel edge to HIL-IL-EL profile, make them thicker and cause uneven transmitting.
Preferably, HIL, IL of embodiment all have consistent pinning point with EL.This long leakage paths that will produce from anode to negative electrode, wherein HIL (conductive hole injecting layer) reaches metallic cathode.By horizontal HIL distance long as above, this effect is by using higher resistive HIL and being then separated anode (ITO) and negative electrode minimizes.
Consideration equipment result, the stabilization of equipment performance during life test demonstrates significant improvement.In an embodiment, by being increased to the resistance (path) of the point that HIL-IL-EL reaches, long stent significantly reduces pixel edge diode effect (this is non-emissive thin diode).
Fig. 2 shows life-span (stabilization of equipment performance) figure.Can see: for initial bright ripple (increasing brightness with the fixing electric current) marked change between devices of single cofferdam-short support unit (dashed curve).This likely " is burnt (burned out) " at test period due to existing vertical leakage paths and is caused, thus causes electric current to redistribute.In fig. 2, single cofferdam-long stent (full curve) shows distributing more closely of bright ripple value, this means that this effect is likely not relevant to leakage current.Likely utilize this cofferdam assessment material and technology stability.Utilize single cofferdam-long stent to arrange, the life-span (equipment degradation) is more measurable and far do not rely on pixel-edge device effect.Thus, the hydrophobic cofferdam of list with long stent has demonstrated the improvement relevant to OLED lifetime stability.
Consider process complexity, it should be noted that: reduce to leak by producing single cofferdam method (approach) with long insulating support, the process simplified can produce the hydrophobic cofferdam of long stent list, and/or reduces complexity relative to the architectural framework of two cofferdam.Advantageously, therefore the embodiment of this simplification makes anode-cathode path increase in a controlled manner, and reduce parasitic leakage current tunablely, it reduces device efficiency.Embodiment covers the alternative method for simplifying realizing single cofferdam pixel.
Further consider process complexity, the process of Fig. 1 a relates to the hydrophobic cofferdam be developed utilizing auxiliary layer patterning and partial reactive ion(ic) etching (RIE).This may need the circulation of two lithographic patternings (such as: clean, dry hard, coating, dry hard, exposure, dry hard, development, cofferdam solidification, coating, exposure, development) add that RIE step and positive resist peel off (strip).
But, add that with such as using two photo-patterning steps shown in Fig. 1 a reactive ion etching is with compared with the embodiment producing the long stent needed for OLED device stability, the work simplification that the embodiment of Fig. 1 b can provide long stent list to develop hydrophobic cofferdam.
But the first simplification as shown in Figure 1 b shows non-patterned hydrophobic cofferdam, has the Partial exposure pixel edge for RIE masking layer.This technique eliminates the demand circulated to mask and development step about the first patterning.
Show a kind of alternative simplification in fig. 3 a, this figure is described to double-developing technique.This technique can remove the demand of RIE and strip step.Preferably, the first patterning cofferdam is thin, has the shallow slope entering into pixel.Preferably, the thin cofferdam layer of first is deposited, and such as spin coating is also hardened.Then, this thin layer is also developed subsequently by photo-patterning, and to expose a part of region of anode, this thin layer has the flat grade to exposed region.Then, another cofferdam layer be deposited, photo-patterning developing.Advantageously, the kind of the such as fluorine kind (species) (such as fluorin radical (moiety)) in this another cofferdam layer moves to the top surface of this another cofferdam layer in the stoving process of this layer, can not will be deposited to the solution wets of exposed region to make this top surface as the sidewall of this another cofferdam layer (preferred also lamellate sidewall).Specifically, Fig. 3 a shows superficial layer 31, first cofferdam layer 32, surface region layer 33, has surface 34 and second cofferdam layer of slope s1 and s2.
Fig. 3 b shows the alternative simplification that form is the dual masks technique with single patterned layer.This is free hand drawing patterning process, does not have positive resist layer, but may need two photomasks and double-exposure step.Top mask (mask 2) can be gradient mask, to limit slope s1 and s2 more sharp.Specifically, Fig. 3 b shows superficial layer 41, cofferdam layer 42, surface region layer 43, slope s1 and s2, and surface 45, and wherein region 44 is second areas of the cofferdam layer relative to the first area between region 44 or below surface 45.
Fig. 3 c shows another kind of alternative simplification: single masking part transmission (leakage) technique with single patterned layer.This is the free hand drawing patterning process not having positive resist layer, but may need the photomask of more high cost, but has single step of exposure.Specifically, Fig. 3 c shows superficial layer 51, cofferdam layer 52, surface region layer 53, slope s1 and s2, and surface 55, and wherein region 54 is second areas of the cofferdam layer relative to the first area between region 54 or below surface 55.Fractional transmission (such as sub-resolution characteristics) mask can be gradient mask, to limit slope s1 and s2 more sharp.
Fig. 3 d shows another kind of alternative simplification again: the single mask process with single patterned layer utilizing reflective area and sub-threshold exposure dosage.This is the free hand drawing patterning process not having positive resist layer and single step of exposure.The design of layer above can be incorporated to the reflective area for producing more high dose region, so that completely crosslinked (cross-link) cofferdam.The amount of anode-cathode distance and parasitic leakage current therefore can profit adjust in this way.Specifically, Fig. 3 d shows superficial layer 61, cofferdam layer 62, surface region layer 63, slope s1 and s2, and surface 65, wherein region 64 be relative to surface 65 below the second area of cofferdam layer of first area.
The cofferdam pixel of this single cofferdam pixel with photo-patterning and/or RIE patterning is contrary, wherein cofferdam pixel each usually by the short path length provided from anode to negative electrode (blue region) and normal length can not regulate – to see Fig. 1 c of single cofferdam pixel of photo-patterning and/or RIE patterning.
About above-described distinct methods and embodiment, Fig. 4 shows various exemplary bracket cofferdam image.Fig. 4 a shows double-developing long stent cofferdam, Fig. 4 b shows the double-developing long stent cofferdam with HIL, Fig. 4 c shows the long stent cofferdam of the recess (notch) through RIE, Fig. 4 d shows cofferdam of singly developing, and Fig. 4 e shows list development cofferdam (short (nothing) support) with HIL.
For HIL+IL flat thickness profile for maximize on microcavity platform OLED device performance be expect.In ink-jet printing apparatus, thickness profile depends on the cofferdam structure of bottom.The preferred cofferdam structure of following detailed description, to realize flat thickness profile suitable in the ink-jet printing apparatus of single cofferdam.Advantageously, this profile can provide the gentle transition from cofferdam support to active region, and this makes the HIL that have printed form the flat profile being suitable for microcavity OLED device.
Consider the flat film profile utilizing mild support list cofferdam+non-water HIL particularly, embodiment can provide the gentle transition from cofferdam support to active region, makes the HIL that have printed form the flat profile being suitable for microcavity OLED device thus.For HIL+IL flat thickness profile for the performance maximizing OLED device on microcavity platform be expect.In ink-jet printing apparatus, thickness profile depends on bottom cofferdam structure.Embodiment provides the cofferdam profile realizing suitable flat thickness profile in the ink-jet printing apparatus of single cofferdam.
The accurate control that maximization performance generally needs microcavity OLED device intima-media thickness and profile is realized at most possible color dot place.In addition, if there is the remarkable inhomogeneities of HIL+IL layer profile, then will there is the region of the outer coupling (out-coupling) of non-optimal and performance by impaired.
Such as, for ink-jet printing apparatus, the wide cross section of HIL+IL thickness is shown in Figure 5.Can see, Comparatively speaking the fringe region of pixel and central area demonstrate significant thickening.CIE coordinate offsets from target color point in that region.This causes integral device performance impairment.
Develop a kind of cofferdam type, to minimize the performance that therefore heavy-edge amount also improves printing.When HIL closely can not follow cofferdam profile, the sharply transition from support to ITO will cause edge to thicken.
The embodiment with mild cofferdam support is shown in Figure 6, the expression of top annular section feature is comprised at the figure of bottom, wherein, and do not have compared with gently dipping embodiment (left-hand side), shown in the figure of this mild decline in the bottom of right-hand side.
Utilize this mild support cofferdam type to be proved to be makes equipment performance maximize on ink jet printing platform, has comparativity to make it and SC (spin-coating equipment) data (data for shown in the equipment of transmitting green light):
Wherein DE=(u ' v ') utilizes u ', the v ' of CIE1976 color space (colour space) (" CIELUV ") to limit.The ink-jet printing apparatus that the table shows such as mild support cofferdam equipment has the performance comparable with spin-coating equipment.
In addition, thus, should be noted that: provided from the conversion (that is, CIE1931 → CIE1976) of the CIE u ' v ' of CIExy to the CIELUV of 1931CIE XYZ color space by following formula:
And utilize the u ' of CIELUV, aberration that v ' limits tolerance provide by following formula:
That is, the Euclidean distance in CIE1976 space.
For the embodiment of such as above " mild support cofferdam " equipment, CIEx and the y target for green emitted (NTSC) is 0.213 and 0.724 respectively.CIExy measurement result utilizes Minolta colorimeter to obtain, and dE utilizes CIExy to calculate.
DE=0.02 is acceptable preferred upper limit in embodiment, but 0.005,0.01 or 0.015 more expects.
Fig. 7 shows display standard cofferdam and compares the embodiment with mild support cofferdam and the histogram with the thicker region of more vast scale.This histogram is by being obtained across the some place detect thickness of active region at interval regularly by the surface region layer of the side walls enclose of cofferdam structure.The equipment with " standard cofferdam " is the equipment with long stent, and this support has the thickness of substantial constant, similar with shown in the figure on Fig. 6 top.The equipment with " shallow cofferdam " has long stent, and this support is tapered gradually towards the superficial layer of equipment, such as, has the first slope that angle is preferably less than 5,10,15 or 20 degree." shallow cofferdam " equipment has the thickness distribution narrower than " standard cofferdam " equipment, therefore makes the outer coupling in OLED more controlled (be interior coupling (incoupling) for light absorber device).
Certainly, other effective alternatives many also will it may occur to persons skilled in the art that.Be to be understood that: the invention is not restricted to described embodiment and contain amendment that is obvious, that belong to claims purport and scope for a person skilled in the art.
Claims (27)
1. one kind constructs the method for electronic equipment, this electronic equipment comprises the substrate of the cofferdam structure having superficial layer and limit well on described superficial layer, this cofferdam structure comprises electrical insulating material and has the sidewall in the region surrounding described superficial layer, limit this well thus, this surface region layer comprises the first electrode, and the semiconductive material that this equipment also comprises the second electrode and is configured between the first electrode and the second electrode, described method comprises:
Form the described cofferdam structure with described sidewall, described sidewall comprises the first slope extended from described surface region layer and the second slope extended from the first slope, wherein the second slope is steeper than the first slope, and wherein the some place of sidewall on the second slope separated with the first slope has surface energy and interrupt;
Formed and have the Rotating fields of at least one deck, this Rotating fields to be configured between the first electrode and the second electrode and to have semiconductive material,
Wherein form this Rotating fields to comprise:
On surface region layer and on first slope and the second slope of sidewall, deposit organic solution, to form the described layer of solution processable, wherein deposited organic solution soaks the first slope and the second slope until at the pinning point of surface energy interruptions; And
Dry the organic solution deposited.
2. method according to claim 1, comprising: on solution processable layer, deposit the solution that at least one is other, and the solution wets that wherein this at least one is other until pinning point, and dries the other solution of at least one that deposits.
3. method according to claim 1 and 2, wherein forms cofferdam structure and comprises:
The superficial layer of substrate is formed the first cofferdam layer comprising photoresist;
Photo-patterning is carried out to the first cofferdam layer and develops, with this region of exposed surface layer;
Photoresist agent solution depositing fluorinated on the region of the exposure of the first cofferdam layer and superficial layer, to form the second cofferdam layer;
Dry hard, with second cofferdam layer that hardens, the fluorochemical wherein fluoridizing photoresist agent solution moves to the surface of the second cofferdam layer, to increase the contact angle on organic solution and described surface in described baking hard period; And
Photo-patterning carried out to the second cofferdam layer and develop, exposing the region of the first cofferdam layer with the described region of exposed surface layer again, thus making the first cofferdam layer region have the first slope and the second cofferdam layer has the second slope,
Wherein increased contact angle is higher than the contact angle on organic solution and the first slope and the second slope, and pinning point is in the border on the second cofferdam layer surface with the fluorochemical moved.
4. method according to claim 1 and 2, wherein forms cofferdam structure and comprises:
The solution that deposits is dried with the cofferdam structure layer that hardens by photoresist agent solution depositing fluorinated on superficial layer, form cofferdam structure layer, the fluorochemical wherein fluoridizing photoresist agent solution moves to the surface of cofferdam structure layer, to increase the contact angle on organic solution and described surface in described baking hard period;
Cofferdam structure layer deposit and dries photoresist oxidant layer, and photo-patterning carried out to photoresist oxidant layer and develops;
Dry etching steps, cofferdam structure layer is etched for the photoresist oxidant layer by being developed, with exposed surface layer region, thus the cofferdam structure layer that etched is made to have the described sidewall of the surface region layer surrounding exposure and comprise the first slope and the second slope; And
Remove the photoresist oxidant layer be developed, to expose the surface of cofferdam structure layer, the surface exposed comprises the described fluorochemical moved,
Wherein surface energy interrupts being in the interface between exposed surface and the sidewall that etched comprising the fluorochemical moved.
5. method according to claim 4, wherein forms cofferdam structure and comprises:
Development is carried out and photo-patterning to cofferdam structure layer, to expose by the surface region layer of the side walls enclose of cofferdam structure layer,
Wherein deposit on cofferdam structure layer on cofferdam structure layer that photoresist oxidant layer is included in photo-patterning and deposit photoresist agent solution, and development is carried out to photoresist oxidant layer and comprises exposed surface layer region again, and the dry etching steps of exposed surface layer region extends the region of exposure by thinning cofferdam structure layer, form described first slope and the second slope thus.
6. method according to claim 5, wherein carries out photo-patterning to photoresist oxidant layer and comprises the photic resist layer of mask radiation by having not regional transmission, fractional transmission region and regional transmission completely; And
Photoresist oxidant layer is developed the region that comprises and remove photoresist completely and partly remove the photoresist region being exposed to radiation by part regional transmission.
7. method according to claim 5, wherein dry etching steps comprises reactive ion etching.
8. method according to claim 7, wherein dry etching steps comprises the reactive ion etching using oxygen plasma.
9. method according to claim 1, wherein forms cofferdam structure and comprises:
Cofferdam layer is formed by photoresist agent solution depositing fluorinated on superficial layer;
Dry firmly, with the cofferdam layer that hardens, wherein the fluorine compounds of photoresist agent solution move to the surface of cofferdam layer in described baking hard period, increase organic solution and surperficial contact angle thus;
Carry out photo-patterning to the cofferdam layer hardened, this photo-patterning comprises with the first area of the first radiation dose radiation cofferdam layer, and with the second area of second this cofferdam layer of radiation dose radiation, described second radiation dose is less than the first radiation dose;
Cofferdam layer is developed, with this region of exposed surface layer and the region of the cofferdam layer partly removed with described second radiation dose radiation, thus, this part removing step provides and surrounds the region that is exposed and the sidewall with the first slope and the second slope
Wherein pinning point is in the border between cofferdam layer surface and sidewall with the fluorochemical moved.
10. method according to claim 9, wherein:
Photo-patterning comprises simultaneously by the first mask and the second mask radiation cofferdam layer, wherein comprise the complete regional transmission radiation first area by the first mask and the second mask with the first dose first area, and comprise by each at least part of regional transmission radiation second area in the middle of the first mask and the second mask with the second dose second area; And/or
Photo-patterning comprises the mask radiation cofferdam layer by having fractional transmission region and regional transmission more, wherein comprise by regional transmission radiation first area more with the first dose first area, and comprise by part regional transmission radiation second area with the second dose second area; And/or
Deposition of reflective device layer on the region that the method is included in superficial layer, wherein:
The step of depositing fluorinated photoresist agent solution will fluoridize liquid deposition on reflector layer and on superficial layer; And
Photo-patterning comprises by mask radiation cofferdam layer, and wherein radiation first area comprises first area and absorbs that the part and absorbing of the first dosage directly received by mask is received from the first mask and reflected back into the part of the dosage first area by reflector layer.
11. according to the method in claim 1 to 10 described in any one, and wherein electronic equipment is the optoelectronic device of such as light-emitting device or light absorber device.
12. methods according to claim 11, wherein light absorber device is organic photovoltaic equipment (OPV).
13. methods according to claim 11, wherein light-emitting device is Organic Light Emitting Diode (OLED).
14. according to the method in claim 1 to 10 described in any one, and wherein electronic equipment is OLED and organic solution is for providing hole injection layer (HIL).
15. methods according to claim 14, be included on described solution processable layer and form at least another solution processable layer between the first electrode and the second electrode, this another solution processable layer is used for providing intermediate layer (IL) and/or light-emitting layer (EL).
16. according to the method in claim 1 to 10 described in any one, wherein:
Time at least one in the middle of the second sloped region being deposited over the first slope and extending to pinning point from this first slope, the contact angle of organic solution is 10 ° or less; And/or
Wherein, when the region being deposited over the cofferdam structure extended away from the first slope from this pinning point, the contact angle of organic solution is 50 ° or larger.
17. 1 kinds of electronic equipments comprising substrate, this substrate has superficial layer and on described superficial layer, limits the cofferdam structure of well, this cofferdam structure comprises electrical insulating material and has the sidewall in the region surrounding described superficial layer, limit this well thus, this surface region layer comprises the first electrode, and the semiconductive material that this equipment also comprises the second electrode and is configured between the first electrode and the second electrode, wherein:
Sidewall has the first slope extended from surface region layer and the second slope extended from the first slope, and wherein the second slope is steeper than the first slope; And
This equipment comprises the Rotating fields with at least one deck, and layer described at least one is solution processable layer, and this Rotating fields has semiconductive material and is configured between the first electrode and the second electrode, wherein:
The point place of solution processable layer described at least one on the second slope separated with the first slope has pinning point, and described solution processable layer is configured on surface region layer and on the first slope of sidewall and the second slope.
18. electronic equipments according to claim 17, wherein cofferdam structure comprises at least one photoresist oxidant layer.
19. electronic equipments according to claim 18, wherein:
Described photoresist oxidant layer has this point on the second slope and comprises fluorochemical; And/or
Cofferdam structure comprises multiple photoresist oxidant layer, and described photoresist oxidant layer has the first slope; And/or
Cofferdam structure comprises the described photoresist oxidant layer and the first slope and the second slope with fluorochemical.
20. according to claim 17 to the electronic equipment in 19 described in any one, and wherein the first Slope Facies has the oblique angle being less than or equal to 20 degree for superficial layer.
21. electronic equipments according to claim 20, wherein oblique angle is less than 10 degree.
22. according to claim 17 to the electronic equipment in 19 described in any one, wherein:
First slope extends up to the cofferdam structure thickness being less than 300nm at the boundary with the second slope; And/or
Sidewall extends from surf zone, to provide the cofferdam structure thickness of at least 300nm; And/or
First slope extends beyond the length of at least 1 μm along superficial layer.
23. electronic equipments according to claim 22, wherein the second slope extends beyond the length of at least 8 μm along superficial layer.
24. electronic equipments according to claim 22, wherein sidewall extends beyond the length of at least 10 μm along superficial layer.
25. according to claim 17 to the electronic equipment in 19 described in any one, and wherein equipment is light-emitting device, and wherein said solution processable layer comprises the organic semiconductive materials for providing hole injection layer (HIL).
26. electronic equipments according to claim 25, wherein light-emitting device is OLED.
27. electronic equipments according to claim 25, wherein solution processable layer described at least one comprises the another kind of organic semiconductive materials be configured at for providing on the material of HIL, and this another kind of organic semiconductive materials is for providing intermediate layer (IL) or light-emitting layer (EL).
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| KR (1) | KR20150020140A (en) |
| CN (1) | CN104377311B (en) |
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| CN106207012A (en) * | 2016-08-15 | 2016-12-07 | 京东方科技集团股份有限公司 | Pixel print structure and preparation method thereof, display device and inkjet printing methods |
| CN106356396A (en) * | 2016-11-24 | 2017-01-25 | Tcl集团股份有限公司 | Pixel Bank structure applicable to preparation of display by printing process and preparation method thereof |
| CN108346677A (en) * | 2017-07-17 | 2018-07-31 | 广东聚华印刷显示技术有限公司 | Dot structure and preparation method thereof |
| CN109713021A (en) * | 2019-01-18 | 2019-05-03 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and preparation method thereof |
| US10741798B1 (en) | 2019-01-18 | 2020-08-11 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode display panel and method of manufacturing same |
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| US11038150B1 (en) | 2020-01-30 | 2021-06-15 | Sharp Kabushiki Kaisha | QLED/OLED pixel having reflective cavity electrode configuration |
| US11152538B1 (en) | 2020-04-03 | 2021-10-19 | Sharp Kabushiki Kaisha | High on-axis brightness and low color shift QD-LED pixel |
| US11264597B2 (en) | 2020-06-22 | 2022-03-01 | Sharp Kabushiki Kaisha | Multiple QD-LED sub-pixels for high on-axis brightness and low colour shift |
| US11456443B2 (en) | 2020-12-01 | 2022-09-27 | Sharp Kabushiki Kaisha | High on-axis brightness and low colour shift QD-LED pixel with equal layer thicknesses between colour pixels |
| US11785819B2 (en) | 2021-04-01 | 2023-10-10 | Sharp Kabushiki Kaisha | Layers for improved extraction for transparent cathode emissive displays |
| US11871610B2 (en) | 2021-05-13 | 2024-01-09 | Sharp Kabushiki Kaisha | Dual bank structure for improved extraction from an emissive layer |
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2014
- 2014-08-14 KR KR20140105926A patent/KR20150020140A/en not_active Ceased
- 2014-08-15 JP JP2014165413A patent/JP2015057772A/en active Pending
- 2014-08-15 CN CN201410400892.4A patent/CN104377311B/en not_active Expired - Fee Related
- 2014-08-15 TW TW103128177A patent/TWI634686B/en not_active IP Right Cessation
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106207012A (en) * | 2016-08-15 | 2016-12-07 | 京东方科技集团股份有限公司 | Pixel print structure and preparation method thereof, display device and inkjet printing methods |
| CN106207012B (en) * | 2016-08-15 | 2018-07-06 | 京东方科技集团股份有限公司 | Pixel print structure and preparation method thereof, display device and inkjet printing methods |
| US10439137B2 (en) | 2016-08-15 | 2019-10-08 | Boe Technology Group Co., Ltd. | Pixel print structure, manufacturing method thereof, display device, inkjet printing method |
| CN106356396A (en) * | 2016-11-24 | 2017-01-25 | Tcl集团股份有限公司 | Pixel Bank structure applicable to preparation of display by printing process and preparation method thereof |
| CN106356396B (en) * | 2016-11-24 | 2021-03-26 | 深圳市Tcl高新技术开发有限公司 | Pixel Bank structure suitable for preparing display by printing process and preparation method thereof |
| CN108346677A (en) * | 2017-07-17 | 2018-07-31 | 广东聚华印刷显示技术有限公司 | Dot structure and preparation method thereof |
| CN109713021A (en) * | 2019-01-18 | 2019-05-03 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and preparation method thereof |
| CN109713021B (en) * | 2019-01-18 | 2020-05-12 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| WO2020147210A1 (en) * | 2019-01-18 | 2020-07-23 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and manufacturing method therefor |
| US10741798B1 (en) | 2019-01-18 | 2020-08-11 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode display panel and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201314655D0 (en) | 2013-10-02 |
| KR20150020140A (en) | 2015-02-25 |
| TW201513427A (en) | 2015-04-01 |
| CN104377311B (en) | 2018-10-16 |
| TWI634686B (en) | 2018-09-01 |
| JP2015057772A (en) | 2015-03-26 |
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