CN104377311B - Hydrophobic cofferdam - Google Patents
Hydrophobic cofferdam Download PDFInfo
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- CN104377311B CN104377311B CN201410400892.4A CN201410400892A CN104377311B CN 104377311 B CN104377311 B CN 104377311B CN 201410400892 A CN201410400892 A CN 201410400892A CN 104377311 B CN104377311 B CN 104377311B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to hydrophobic cofferdam.The present invention provides a kind of method constructing the electronic equipment with electrical isolation cofferdam structure, and the wherein electrical isolation cofferdam structure includes with the side wall for limiting well, this method：Cofferdam structure is formed, so that side wall includes the first slope extended from surface region layer and the second steeper slope for extending from first slope, side wall is at the point on the second slope separated with first slope with surface energy interruption；By depositing the solution of the material in well, formed have include organic semiconductive materials at least one layer of layer structure, deposited in solution soak first slope and the second slope until the pinning point at the surface energy interruption；And the solution that drying is deposited.
Description
Technical field
Present invention relates generally to the method that construction includes the electronic equipment of substrate, wherein substrate with superficial layer and
Cofferdam (bank) structure of well is limited on the superficial layer, and the electronic equipment includes having superficial layer and the superficial layer
The substrate of the upper cofferdam structure for limiting well.
Background technology
Investigated extensively for manufacture electronic equipment, be related to that (solution adds from the method for liquid deposition active constituent
Work).If active constituent is from liquid deposition, active constituent preferably is contained in the desired region of substrate.This can lead to
The substrate of the cofferdam layer for the patterning that offer includes restriction well is crossed to realize, active constituent can be from liquid deposition in the well
In.Well includes solution in positive drying, so that active constituent is retained in the region of the substrate limited by well.
It has been found that these methods are for being particularly useful from liquid deposition organic material.Organic material can be conductive
, it is semiconductive and/or photoelectric activity so that they can emit light when electric current passes through them or by light
Electric current is generated when striking on them carrys out detection light.It is referred to as organic electronic device using the equipment of these materials.If there is
Machine material is light-emitting material, then equipment is referred to as organic light emitting devices (OLED).In addition, solution processing realizes film crystalline substance
Body pipe (TFT) and the especially low cost of Organic Thin Film Transistors (OTFT), low temperature manufacture.In such a device, the special phase
Hope in the channel of region appropriate and especially equipment to include organic semiconductor (OSC), and can provide and limit well
Cofferdam, to include OSC.
Some equipment may need to be more than single liquid deposition layer.Typical OLED (is such as used in the display
OLED it can be luminous material layer that) can have two layers of organic semiconducting materials-one, such as light emitting polymer (LEP), and another
One layer can be hole transporting material, such as polythiofuran derivative or polyaniline derivative.
Advantageously, simple cofferdam structure has features designed to include successively the single material of all such deposited liquid
Material/layer.But the equipment using having single bank material and single pinning point for the liquid of all depositions, it is heavy in solution
There is the risk of electric leakage paths or short circuit between the electrode of lamination either side.For example, including anode-HIL-IL-EL- cathodes
In the OLED structure of structure, leakage current can be through flowing between the anode and cathode in the borderline leakage paths of HIL.It is similar
Ground, leakage paths by cathode and device stack very thin on hole injection layer on cofferdam (HIL), cofferdam or can be in
The point contact of pinning point is in direct contact and causes.When being back-driven into and/or before turn, the equipment printed completely
JV (Current density-voltage) curve can for example show high-leakage (high current).By spin coating (spun) middle layer (IL) and electroluminescent
Luminescent layer (EL), leakage is much lower, because the film that HIL is spun on top is completely covered.It can lead to much lower efficiency.
Current low leakage equipment usually requires double weir systems, to detach anode pinning point and cathode.But with double cofferdam
Architectural framework is compared, and single cofferdam can reduce complexity.Additionally or alternatively, utilize photolithographic patterning single cofferdam
It can be limited for pixel (cofferdam) and cheap method is provided.But this cofferdam can allow anode region to be exposed to hydrocarbon
(resist residue), and/or the layer (HIL, IL and EL) that machined for all solution provide single fluid pinning point.Highly conductive
HIL has been proved to cause plus the short path length between the anode surface (ITO) and the consistent pinning point of HIL-IL-EL- cathodes
High-leakage equipment.
Similarly, the color homogeneity that the light-emitting device with cofferdam structure may be with difference in entire active region
And/or light emitting efficiency.
Accordingly, it is desirable to provide for so that different liquids be included in well in improved structure and/or for constructing this knot
The technique of structure.Particularly, improved structure can have the advantages that any one or more below such as：In whole equipment
Improved color homogeneity, relatively low and/or tunable electricity leakage, the improved overall power in whole equipment active region
Efficiency and/or efficiency uniformity, improved lifetime stability (for example, emitting about OLED) are (preferably, for example, being surveyed in the service life
More stable and/or more repeatable device illumination in examination), greater compactness of equipment, and reduce structural complexity and/or utilization
(any one of which will produce the improved time of device fabrication or cost efficiency, changes the ability of less processing step construction
Into equipment output, repeatability, about constituent material volume and/or quantity reduction demand, this can for example cause into
This reduction).
In order to be used in understanding the present invention, it is noted that following disclosure：
- US8,063,551 (Du Pont)；
- US2006/197086 (Co., Ltd of Samsung)；
- US2010/271353 (Sony)；
- WO2009042792 (inventor Tsai Yaw-Ming A etc.)；
- US2007/085475 (semiconductor energy laboratory)；
- US7799407 (Seiko Epson company)；
-US7604864(Dainippon Screen MFG)；
- WO9948339 (Seiko Epson company)；
- JP2007095425A (Seiko Epson company)；
- WO2009/077738 is (in the PCT/GB2008/004135 that on June 25th, 2009 announces, inventor
Burroughes and Dowling)；And
- WO2011/070316 A2 are (in the PCT/GB2010/002235 that on June 16th, 2011 announces, inventor
Crankshaw and Dowling).
Invention content
According to the first aspect of the invention, the method that construction includes the electronic equipment of substrate is provided, wherein substrate has
The cofferdam structure of well is limited on superficial layer and the superficial layer, cofferdam structure includes electrically insulating material and has the encirclement table
The side wall in the region of face layer, thus limits the well, surface region layer includes first electrode, and the equipment further includes second electrode
And the semiconductive material between first electrode and second electrode, this method include：It is formed described with the side wall
Cofferdam structure, the side wall include the first slope extended from the surface region layer and extend from first slope second tiltedly
Slope has table wherein the second slope is steeper than first slope wherein at point of the side wall on the second slope separated with first slope
Face energy blackout；Formed have at least one layer of layer structure, this layer of structure be configured between first electrode and second electrode and
With semiconductive material, wherein forming layer structure includes：On surface region layer and the first slope of side wall and the second slope
Upper deposition organic solution, to form the layer of solution processable, deposited in organic solution soak first slope and
Two slopes are until the pinning point at surface energy interruption；And dry deposited organic solution.
Thus, embodiment can provide pinning point (preferably multiple, the Quan Dou at least one solution processable layer
The same point is pegged) so that pinning point is separated with surface region layer by a paths, the path along its whole length due to having
There is different slopes and deviates from straight line.This can be reduced in electrode (for example, anode and cathode of liquid deposition layer either side)
Between generate the risk of electric leakage paths or short circuit.For example, in the OLED structure for including anode-HIL-IL-EL- cathode constructions
In, any leakage paths between the anode and cathode on the boundary of preferred higher resistive (highly resistive) HIL are all
It increases.The path of lengthening preferably has sufficiently high resistance, to prevent in the case that other there is a possibility that such as efficiency, reliable
The leakage that property and/or service life, color change etc. significantly degrade.
More specifically consider resulting device structure, it shall be noted that：Surface energy is interrupted preferably through soaking
It (for example, hydrophilic) and do not soak and generates what the processing step on boundary generated between (for example, hydrophobic) region.This boundary preferably exists
The top on the second slope.The top on the second slope is preferably adjacent with the flat surfaces of cofferdam structure, the flat surfaces and superficial layer
It is opposite and parallel.In any case, surface energy interrupts all preferably away from first slope and therefore far from surface region layer.
This method may include that at least one other solution is deposited on solution processable layer, for example, EL (shines
Layer) and/or IL (middle layer), wherein at least one other solution soaks always pinning point, and drying is deposited
At least one other solution.Thus, multiple this solution processable layers can be with pinning point having the same.
This method can also be provided, wherein formation cofferdam structure includes：It includes photic anti-to be formed on layer on the surface of the substrate
Lose the first cofferdam layer of agent；Photo-patterning is carried out to the first cofferdam layer and is developed, with the region of exposed surface layer；In the first cofferdam
Layer and photoresist agent solution depositing fluorinated on the exposed region of superficial layer, to form the second cofferdam layer；Dry it is hard, to harden the
Two cofferdam layers, wherein the fluorochemical of fluorination photoresist agent solution moves to the table of the second cofferdam layer during described dry firmly
Face, to increase the contact angle of organic solution and the surface；And photo-patterning is carried out to the second cofferdam layer and is developed, with again
The region of exposed surface layer and the region of the first cofferdam layer of exposure, so that the first cofferdam layer region has first slope
And the second cofferdam layer has the second slope, wherein the increased contact angle of institute is higher than organic solution and first slope and the second slope
Contact angle, and pinning point is in the boundary with the second cofferdam layer surface of fluorochemical migrated.Drying the hard phase
Between the surface that moves to of compound can generally be described as " Free Surface ", the interface i.e. with external environment (such as air).
Just as in any embodiment using this fluorination photoresist, photoresist can be carried by photoresist manufacturer
For that can have the additional step for fluorochemical being added to unfluorinated photoresist at the fluorinated or technique.No
How is pipe, and after the hardening of the second cofferdam layer, the second cofferdam layer is all preferably included than the first cofferdam layer higher concentration containing fluorination
Close object.It is the portion of " Free Surface " part before in addition, after the part that the second cofferdam layer develops to remove the second cofferdam layer
Divide the boundary for preferably having and soaking/not soaking, wherein the edge of the second cofferdam layer is exposed by removal, this edge is side wall
Part.Thus, in addition to double slanted side wall, pinning point can also be created.
This method can also be provided, wherein formation cofferdam structure includes：Pass through the depositing fluorinated photoresist on superficial layer
It agent solution and dries deposited solution and forms cofferdam structure layer to harden cofferdam structure layer, wherein being fluorinated photoresist
The fluorochemical of solution moves to the surface of cofferdam structure layer during described dry firmly, to increase organic solution and the surface
Contact angle；Photoresist layer is deposited and dried on cofferdam structure layer, and photo-patterning is carried out to photoresist layer
And develop；Dry etching steps, for etching cofferdam structure layer by developed photoresist layer, with exposed surface layer
Region, so that the cofferdam structure layer that etched has the side wall for the surface region layer for surrounding exposure and includes first slope
With the second slope；And the photoresist layer for having removed developed, to expose the surface of cofferdam structure layer, the surface exposed
Including the fluorochemical migrated, wherein surface energy is interrupted in the exposure table for including the fluorochemical migrated
Interface between face and the side wall that etched.Dry etching steps may include reactive ion etching, it is preferable to use oxygen plasma
Body.With it is like above, being the part of cofferdam layer " Free Surface " part before preferably has the boundary soaking/do not soak, wherein
The edge of cofferdam layer is exposed due to the removal part of development cofferdam layer, this edge is the part of side wall.Thus, in addition to diclinic
Except the side wall of slope, pinning point can also be created.
This method can also be also provided, wherein formation cofferdam structure includes：Cofferdam structure layer develop and light pattern
Change, with the surface region layer that exposure is surrounded by the side wall of cofferdam structure layer, wherein depositing photoresist on cofferdam structure layer
Layer includes the deposition photoresist agent solution on the cofferdam structure layer of photo-patterning, and is developed to photoresist layer
Including exposed surface layer region again, and the dry etching steps of exposed surface layer region are extended by thinning cofferdam structure layer
The first slope and the second slope is consequently formed in exposed region.
This method can also be provided, wherein：It includes by having substantially not to carry out photo-patterning to photoresist layer
Regional transmission, fractional transmission region and substantially completely regional transmission (at least have than fractional transmission region bigger transmissivity)
Mask radiate photoresist layer；And it includes removing the region of photoresist completely to carry out development to photoresist layer
And it is partially removed in the photoresist region that radiation is exposed to by fractional transmission region.
This method can also be also provided, wherein formation cofferdam structure includes：By depositing fluorinated photic anti-on superficial layer
It loses agent solution and forms cofferdam layer；It dries firmly, to harden cofferdam layer, wherein the fluorochemical of photoresist agent solution is in the baking
The surface of cofferdam layer is moved to during hard, thus increases the contact angle of organic solution and surface；The cofferdam layer hardened is carried out
Photo-patterning, the photo-patterning include with the first area of the first dose of radiation radiation cofferdam layer and with the second dose of radiation spoke
The second area of the cofferdam layer is penetrated, second dose of radiation is less than the first dose of radiation；Develop to cofferdam layer, with exposure
The region of superficial layer and the region for being partially removed in the cofferdam layer radiated with second dose of radiation, the as a result, part
Remove step provide surround be exposed region and with first slope and the second slope side wall, wherein pinning point be in tool
There is the boundary between the cofferdam layer surface of the fluorochemical migrated and side wall.Depending on being to use negative photoresist also
It is positive photoresist, first area can be on surface region or on the cofferdam structure part to be retained.Portion
Along side wall and thus point preferred thinning of removal step extends to the region of the cofferdam layer of surface region layer, so as to along being deposited on
The longer path at the solution processable layer edge in well provides supporting structure.
This method can also be provided, wherein：Photo-patterning includes radiating cofferdam by the first mask and the second mask simultaneously
Layer, wherein including the wholly transmissive area radiation first by the first mask and the second mask with the first dose first area
Region, and include that each is at least partly by the first mask and the second mask with the second dose second area
Regional transmission radiates second area.At least partly transmissive region may include the wholly transmissive region and/or second of the first mask
The fractional transmission region of mask.At least one preferably fractional transmission region with Transmission Gradient in these regions.
This method can also be provided, wherein：Photo-patterning includes by with fractional transmission region and more (preferably complete
The mask of regional transmission radiates cofferdam layer entirely), wherein including the region by more transmiting with the first dose first area
First area is radiated, and includes passing through fractional transmission area radiation second area with the second dose second area.
This method can also be also provided, include the deposition of reflective device layer on the region of superficial layer, wherein：It is depositing fluorinated photic
The step of resist solution, will be fluorinated liquid deposition on reflector layer and on superficial layer；And photo-patterning includes passing through
Mask radiates cofferdam layer, wherein radiation first area, which includes first area, absorbs the first dosage directly received by mask
A part that a part and absorption are received from the first mask and that the dosage in first area is reflected back by reflector layer.
This method can also be provided, wherein electronic equipment is the optoelectronic device of such as light-emitting device or light absorber device,
Preferably such as organic photovoltaic equipment (OPV；For example, solar cell) light absorber device, or such as organic light emission two
The light-emitting device of pole pipe (OLED).Alternatively, equipment can be thin film transistor (TFT).
This method can also be also provided, wherein electronic equipment is Organic Light Emitting Diode and organic solution is to use national defence expenditure
Hole injection layer (HIL) is provided.In addition, at least another solution processable layer can on the solution processable layer and
Formed between first electrode and second electrode, and another solution processable layer for respectively provide middle layer (IL) and/or
Light-emitting layer (EL).
This method can also be provided, wherein when being deposited over first slope and extend to the of pinning point from first slope
Two sloped regions when at least one of it is upper when, the contact angle of organic solution is 10 ° or smaller.This contact angle generally makes table
It soaks well in face.
This method can also be provided, wherein when being deposited over the cofferdam structure extended from pinning point far from first slope
When on region, the contact angle of organic solution is preferably 50 ° or bigger.This contact angle does not generally make surface soak well,
That is, not soaking.
According to the second aspect of the invention, the electronic equipment including substrate is provided, which has superficial layer and described
The cofferdam structure of well is limited on superficial layer, cofferdam structure includes electrically insulating material and has the region for surrounding the superficial layer
Thus side wall limits well, which includes first electrode, and the equipment further includes second electrode and is configured at
Semiconductive material between one electrode and second electrode, wherein：Side wall have the first slope that extends from surface region layer and from
The second slope that first slope extends, wherein the second slope is steeper than first slope；And the equipment includes at least one layer of
Layer structure, at least one layer are solution processable layers, this layer of structure has semiconductive material and be configured at first electrode
Between second electrode, wherein：Point of at least one solution processable layer on the second slope separated with first slope
Place has pinning point, and the solution processable layer is configured on surface region layer and the first slope of side wall and the second slope
On.
Thus, with for first aspect similarly, embodiment, which can provide, is used for (one or more) solution processable layer
Pinning point, pinning point separates with surface region layer by a paths, and the path is different oblique due to having along its whole length
Rate and deviate from straight line.This is generated between can equally reducing electrode (for example, anode and cathode of liquid deposition layer either side)
Electric leakage paths or the risk of short circuit.For example, any leakage between the anode and cathode on the boundary of preferred higher resistive HIL
Path is all lengthened out, with sufficiently high resistance, to prevent in the case that other there is a possibility that such as efficiency, reliability
And/or the leakage that service life, color change etc. significantly degrade.
More specifically consider device structure, it shall be noted that：Superficial layer may include one of electrode (for example, anode)
And/or part reflector layer.For bottom emission apparatus embodiments, superficial layer is (for example, such as tin oxygen of tin indium oxide (ITO)
Compound) and substrate (for example, glass) be preferably it is at least partly transparent.The independent sub-layer (such as silver layer) of superficial layer can provide
Above-mentioned part reflector layer, which, which can arrange, is shaped as optical cavity, alternatively, specifically, formation can
With the microcavity with abundant small size, so that the observable quantum for leading to the narrower emission spectrum from light-emitting device
Effect.For the equipment of the reflector layer including this such as Ag, the construction of equipment may include：Code-pattern Ag (alloy) is heavy
Product；Code-pattern ITO depositions；The patterning of ITO, to form at least one electrode；Cofferdam spin coating；Followed by cofferdam patterns.Make
To substitute, the electrode layer of superficial layer can also play the function of this part reflector layer.
Electronic equipment can also be provided, wherein when being deposited over first slope and extend to pinning point from first slope
The region on the second slope when at least one of it is upper when, be used to form the molten of the solution processable layer being configured on surface region layer
The contact angle of liquid is 10 ° or smaller.Additionally or alternatively, when solution is enclosed from pinning point far from what first slope extended
When being deposited in the surface region of weir structure, it is used to form the contact of the solution for the solution processable layer being configured on surface region layer
Angle is 50 ° or bigger.Thus, this solution not only can be with 10 ° or smaller contact angle but also can connecing with 50 ° or bigger
Feeler.
Electronic equipment can also be provided, wherein cofferdam structure includes at least one photoresist layer.
Electronic equipment can also be provided, wherein the photoresist layer has the point on the second slope and includes containing
Fluorine compounds.
Electronic equipment can also be provided, wherein cofferdam structure includes multiple photoresist layers, the photoresist layer
With first slope.
Electronic equipment can also be also provided, wherein cofferdam structure includes the photoresist layer for having fluorochemical
And first slope and the second slope.
Electronic equipment can also be also provided, wherein first slope has oblique less than or equal to 20 degree relative to superficial layer
Angle, most preferably less than 5,10 or 15 degree.This angle can be along the average value of first slope and/or especially oblique first
Slope reaches the average value in the place of superficial layer.
Electronic equipment can also be provided, wherein first slope extends up in the boundary with the second slope and is less than
The cofferdam structure thickness (wherein the thickness is the difference in height relative to superficial layer) of 300nm, preferably smaller than 200nm, preferably
One slope and the second slope at least one of work as along the place that the cofferdam structure thickness of 100nm to 150nm extends (thus, quilt
First slope and/or the second slope are crossed highly preferred in the range of 100-150nm；Plurality of layer forms cofferdam structure
And there is respective slope, at least one (such as first slope) preferably crosses the height of 100-150nm).
Electronic equipment can also be also provided, wherein side wall extends from surface region, to provide at least cofferdam structure of 300nm
Thickness, preferably at least 1 μm.Thus, the maximum height of the side wall on superficial layer is preferably at least 300nm.In embodiment,
Maximum height is advantageously sufficiently thick, to be subjected to dry etching steps, such as RIE.
Electronic equipment can also be also provided, wherein first slope extends beyond at least length of 1um along superficial layer, preferably
Ground, wherein the second slope extends beyond at least 8 μm of length along superficial layer, it is preferable that wherein side wall (at least first slope and
Two slopes) at least 10 μm of length is extended beyond along superficial layer.
Electronic equipment can also be provided, wherein equipment is light-emitting device, and the wherein described solution processable layer includes
Organic semiconductive materials for providing hole injection layer (HIL), light-emitting device is OLED preferably wherein.In addition, at least one
A solution processable layer may include another organic semiconductive materials being configured on the material for providing HIL,
Wherein the another kind organic semiconductive materials are for providing middle layer (IL) or light-emitting layer (EL).
When electronic equipment is the light-emitting device of such as OLED, preferably one of first electrode layer and the second electrode lay (are appointed
What one-first electrode layer or the second electrode lay；If it is bottom emitter equipment, then preferably the second electrode lay) it is that light is anti-
(preferably fully reflective) penetrated, and in the electrode layer the other is light transmissive (if it is bottom emitter equipment,
Then preferable substrate is also transmission).This equipment preferably includes part light reflection and (preferably completely reflects) layer (preferably metal
, such as silver, and/or preferably by blanket-deposited rather than pattern), the part reflection layer (for example, substrate (preferably
Glass) between first electrode layer) be arranged to form the microcavity with light reflection electrode layer.This cavity can make light
Amplify and/or keeps equipment more efficient.
Preferred embodiment limits in appended dependent claims.
In the aspects above of preferred embodiment any one in any one or more, and/or the above optional feature
It is a or multiple can be combined with any arrangement mode.
Description of the drawings
For a better understanding of the present invention and in order to show how the present invention may be implemented, will refer to as an example now
Attached drawing, wherein：
Fig. 1 a show example constructions method, wherein fluorination bank material be spun onto on anode (such as ITO) and by
Photo-patterning, to provide well；
Fig. 1 b show the use of single masks, utilize fractional transmission region in the mask, to limit long anode-the moon
Pole span from；
Fig. 1 c show the realization (top to centre for the cofferdam pixel that the RIE with short side wall path length has been patterned
Figure), and, as a contrast, according to provide longer path length embodiment pixel (figure of lowest part)；
Fig. 1 d show with according to fig. 1a or the technique of 1b formed cofferdam equipment；
Fig. 2 shows service life (stabilization of equipment performance) figures；
Fig. 3 a show double-developing technique；
Fig. 3 b show the dual masks technique with single patterned layer；
Fig. 3 c show single masking part transmission technique with single patterned layer；
Fig. 3 d show single mask process with single patterned layer using reflector space and sub- threshold exposure dosage；
Fig. 4 a-4e show the scanning electron microscope image of the holder cofferdam sectional view of embodiment；
Fig. 5 shows variation HIL+IL thickness and transmitting CIE value in whole equipment active region；
Fig. 6 illustrates the desired elimination on precipitous cofferdam structure boundary；And
Fig. 7 shows the histogram measured for the HIL area thickness of standard cofferdam and shallow cofferdam embodiment.
Specific implementation mode
In general, the layer of example OLED embodiments can be as follows：
Substrate, such as glass preferably with the superficial layer for including ITO (80nm) electrode, and optionally have and are used for
Form the reflector layer of microcavity, such as Ag.
HIL (hole injection layer)=be ink-jet printed by using the ND3202b from the chemical plant Nissan
IL (middle layer)
EL (luminescent layer), including light emitting polymer LEP, such as green emitting polymer.
In general embodiment provides single cofferdam architectural framework, for example, having longer path length, thus reduce leakage
Electric current.For OLED, fluid pinning point that this path length can be consistent with HIL-IL-EL in anode surface (for example, ITO)
Between.These can be any potential parasitic leakage current and/or non-emissive along the longer path length of higher resistive HIL
Edge device diode generates higher resistive path.This cofferdam structure is proved to be the improvement to OLED lifetime stabilities.
A variety of cofferdam manufacturing process for this embodiment are studied in the following description.Such as：(i) pass through auxiliary
(secondary) the hydrophobic cofferdam of pattern layers and partial reactive ion(ic) etching (RIE) and development；(ii) have and be used for RIE
The non-patterned hydrophobic cofferdam of the part exposure pixel edge of masking layer；(iii) double-developing technique；(iv) there is single patterning
The dual masks technique of layer；(v) single masking part with single patterned layer transmits (leakage) technique；And (vi) utilizes echo area
Single mask process with single patterned layer in domain and sub- threshold exposure dosage.
The example of such technique can provide the hydrophobic cofferdam individually developed with part oxygen plasma etch holder.
Advantageously, the hydrophobic cofferdam and subsequent patterning step individually developed make the oxygen plasma cleaning regions ITO and also portion
Divide the pre-qualified amount in ground etching cofferdam.ITO and part etching cofferdam be preferably it is hydrophilic so that HIL is enclosed until hydrophobic
The non-etching area on weir is all wetted.A part of HIL lower section have cofferdam until will with IL and EL share HIL pinnings
Point.Active anode separates programmable distance advantageous by long and preferred equipment and cathode, thus causes lower
Electricity leakage, such as when using the HIL of higher resistive.
Thus, single cofferdam architectural framework for OLED can be by providing the anode surface (ITO) and anode that soak
Longer path length is improved between surface and the consistent fluid pinning points of HIL-IL-EL.This longer path length can be with
Higher resistive option is generated for any potential parasitic leakage current.Embodiment makes anode-cathode path in a controlled manner
It lengthens, and thus tunable, to reduce parasitic leakage current, this can improve device efficiency in turn.
Additionally or alternatively, relative to double cofferdam architectural frameworks, this technique can reduce structural complexity.
Fig. 1 a show example constructions method, wherein sun is arrived in fluorinated bank material (cofferdam structure layer 12) spin coating (spun)
On pole (superficial layer 11) (such as ITO) and by photo-patterning, to provide well (well) (see the area on surface region layer 13
Domain).Then, the photoresist layer 14 on bank material is by photo-patterning, and executes additional technique, to remove cofferdam
A part, thus lengthened insulative cofferdam holder.This additional technique may include one for being etched through bank material
Partial reactive ion etching.Photoresist is removed after the additional process.Thus, the bank material at well edge
Profile variations so that profile provides longer path length.Such as only by oblique along first slope s1 and second in Fig. 1 a
Shown by the illustrative filament of slope s2, etching produces the longer electricity due to the surface 15 that photoresist removes and exposes
Path.
Alternative approach shown in Fig. 1 b uses single mask step, has fractional transmission region in the mask, to limit
The anode-cathode distance of length for cofferdam holder；There are the pixel edges of thin positive masking layer for the preferred etching of RIE step.
RIE can etch pixel, and the edge of pixel is exposed to plasma due to thin masking layer.By being patterned relative to RIE
Notch size change development cofferdam pixel mask design size, anode-cathode distance and spurious leakage therefore
The amount of electric current can adjust with this method.This is patterned with simple photo-patterning cofferdam pixel and/or simple RIE
On the contrary, in photo-patterning cofferdam pixel and RIE patterning cofferdam pixels, each pixel will usually be provided from anode cofferdam pixel
Short path length (blue region) and length to cathode usually cannot be adjusted.Specifically, Fig. 1 b show superficial layer 21,
Cofferdam structure layer 22, surface region layer 23, photoresist layer 24, slope s1 and s2 and surface 25.
(Fig. 1 c show the construction of the patterned cofferdam pixels of the RIE with short side wall path length (above to centre
Figure) and, as a contrast, according to the pixel (nethermost figure) for the embodiment for providing longer path length).
Fig. 1 d show the equipment with the cofferdam formed according to process example as described above, and further include form
Solution processable layer L1 and form for HIL (hole injection layer) are IL (middle layer) and/or LEP (light emitting polymer) layer
Another solution processable layer L2.As seen from Fig. 1 d, HIL, IL have consistent pinning point with LEP fluids.IL and/or EL
Layer can be covered by EIL (electron injecting layer), and EIL can be covered again by cathode layer in turn.Preferably, this EIL not inclusion layers
The pinning point of L1 and L2, but cover these layers and extend on the adjacent area of cofferdam structure.In shape-preserving coating
(coating) EIL is so that in the embodiment that extends on the layer and adjacent region, cathode layer can preferred Direct precipitation
On EIL.
In view of the above, and for example make double weir systems that anode pinning point detaches with cathode in contrast, embodiment
Provide single cofferdam structure with long insulating support.Single hydrophobic cofferdam can be used and apply subsequent Patternized technique
To elongate cofferdam holder.In embodiment, ITO and cofferdam holder can be hydrophilic, so that HIL becomes thin until cofferdam
The pre-qualified point (ink pinning point) of water is all wetted.A part of HIL below until will with IL and LEP share HIL
Pinning point will all have cofferdam.By using higher resistive HIL, it (and is equipment that active anode can be separated out long with cathode
It is programmable) distance.
Embodiment makes anode-cathode path length increase in a controlled manner and therefore provide to reduce spurious leakage
The tunable technique of electric current, this generates the device illuminations of more stable in life test (and repeating).As a contrast, by marking
The single cofferdam that quasi-optical carving technology or more complicated but standard RIE (reactive ion etching) technique are formed can be that pixel (is enclosed
Weir) the cheap method of offer is provided.But both standard techniques all can leave short anode-the moon at pixel (equipment) edge
Pole path length.It has shown that：Short path length between the anode surface (ITO) and the consistent pinning point of HIL-IL-EL- cathodes
(short holder) eventually results in equipment unstable when driving.
Alternatively, Fig. 1 a may be considered that the process flow embodiment shown for single cofferdam with long stent.
The technique is related to the rapid Patternized technique of two-step for generating long cofferdam holder.Holder is from anode (ITO) to ink pinning point
Length can be controlled by auxiliary patterns step, just as the depth of holder can by control, in order to provide with anode
It is appropriate to be electrically isolated.By the mask design for changing the cofferdam pixel of development relative to the Pixel Dimensions of slave part patterning step
The amount of size, anode-cathode distance (referring to only illustrative filament) and parasitic leakage current therefore can utilize this
Embodiment adjusts.With for example wherein pixel it is each will usually provide from anode-cathode short path length (<1 μm) and it is long
The degree usually simple photo-patterning cofferdam pixel of unadjustable (except the height of cofferdam) or simple R IE patterns cofferdam
Pixel is compared, this embodiment generate long stent equipment (for example,>2μm).
Longer anode can also realize that still, this generally will be on pixel side to cathode distance by making cofferdam higher
Edge adversely affects HIL-IL-EL profiles, keeps them thicker and leads to non-uniform transmitting.
Preferably, HIL, IL with EL of embodiment all have consistent pinning point.This will be generated from anode to cathode
Long leakage paths, wherein HIL (conductive hole injecting layer) reach metallic cathode.By lateral HIL long as described above away from
From this effect is by using higher resistive HIL and then detaches anode (ITO) and cathode to minimize.
Consider equipment as a result, the stabilization of equipment performance during life test shows significant improvement.In embodiment, pass through
The resistance (path length) for the point that HIL-IL-EL is reached is increased to, long stent is substantially reduced pixel edge diode effect (this
It is non-emissive thin diode).
Fig. 2 shows service life (stabilization of equipment performance) figures.It can be seen that：For the short support unit in single cofferdam-(dashed curve)
Initial bright wave (brightness is increased with fixed electric current) significant changes between devices.This is likely due to existing vertical leakage
Path dduring test by " burn-up (burned out) " and caused by, to cause electric current to redistribute.In fig. 2, Dan Wei
Weir-long stent (full curve) shows the closer distribution of bright wave magnitude, it means that the effect be possible to not with leakage
Electric current is related.Possible with this cofferdam assessment material and technology stability.It is arranged using single cofferdam-long stent, the service life (sets
Make preparation for dropping grade) it is more predictable and far independent of pixel-edge device effect.Thus, the hydrophobic cofferdam of list with long stent is
It shows and the relevant improvement of OLED lifetime stabilities.
Consider process complexity, it shall be noted that：Pass through single cofferdam method (approach) of the generation with long insulating support
It is leaked to reduce, simplified process can generate the hydrophobic cofferdam of long stent list, and/or come relative to double cofferdam architectural frameworks
It says and reduces complexity.Advantageously, the embodiment of this simplification makes anode-cathode path increase in a controlled manner, and because
This reduces parasitic leakage current tunablely, and it reduce device efficiencies.The alternative of single cofferdam pixel is realized in embodiment covering
Simplify method.
Further consider process complexity, the process of Fig. 1 a relate to the use of auxiliary pattern layers and partial reactive from
The developed hydrophobic cofferdam of son etching (RIE).This may need two lithographic patternings cycle (such as：Cleaning, dry it is hard,
Coating dries hard, exposure, dries hard, development, cofferdam solidification, coating, exposure, development) it is removed plus RIE step and positive resist
(strip)。
But with for example set plus reactive ion etching with generating OLED using two photo-patterning steps shown in Fig. 1 a
The embodiment of long stent needed for standby stability is compared, and the embodiment of Fig. 1 b can provide the work that long stent list develops hydrophobic cofferdam
Skill simplifies.
But the first simplification as shown in Figure 1 b shows non-patterned hydrophobic cofferdam, has and is used for RIE masking layers
Partial exposure pixel edge.This technique eliminates the demand to mask and development step about the first patterning cycle.
Show that a kind of alternative simplification, the figure are described as double-developing technique in fig. 3 a.This technique can remove
The demand of RIE and strip step.Preferably, the first patterning cofferdam is thin, has the shallow slope for entering pixel.Preferably,
One thin cofferdam layer is deposited, such as spin coating and is hardened.Then, which develops by photo-patterning and then, with exposure sun
A part of region of pole, the thin layer have the flat grade to exposed region.Then, another cofferdam layer be deposited, light pattern
Change and develops.Advantageously, the product of such as fluorine kind (species) in another cofferdam layer (such as fluorin radical (moiety))
The top surface of another cofferdam layer kind is moved in the stoving process of this layer, so that the top surface will not be as this another
The side wall (the preferably also side wall of thin layer) of cofferdam layer is soaked by the solution of exposed region to be deposited to like that.Specifically, figure
3a shows superficial layer 31, the first cofferdam layer 32, surface region layer 33, the second cofferdam with surface 34 and slope s1 and s2
Layer.
Fig. 3 b show that form is the alternative simplification of the dual masks technique with single patterned layer.This is single patterning
Process without positive resist layer, but may need two photomasks and double-exposure step.Top mask (mask 2)
Can be gradient mask, more sharp to limit slope s1 and s2.Specifically, Fig. 3 b show superficial layer 41, cofferdam layer 42,
Surface region layer 43, slope s1 and s2 and surface 45, wherein region 44 are relative between region 44 or under surface 45
The second area of the cofferdam layer of the first area of side.
Fig. 3 c show another alternative simplified：Single masking part with single patterned layer transmits (leakage) technique.
This is the free hand drawing patterning step technique without positive resist layer, but may need the photomask of higher costs, but with single
A step of exposure.Specifically, Fig. 3 c show superficial layer 51, cofferdam layer 52, surface region layer 53, slope s1 and s2, and
Surface 55, wherein region 54 are the secondth areas of the cofferdam layer relative to the first area between region 54 or below surface 55
Domain.Fractional transmission (such as sub- resolution characteristics) mask can be gradient mask, more sharp to limit slope s1 and s2.
Fig. 3 d show still another alternative simplification：Individually schemed using reflective area and having for sub- threshold exposure dosage
Single mask process of case layer.This is the free hand drawing patterning step technique without positive resist layer and single step of exposure.Before
The design of the layer in face can be incorporated to the reflective area for generating higher doses region, so as to fully crosslinked (cross-link)
Cofferdam.The amount of anode-cathode distance and parasitic leakage current therefore can adjust with this method.Specifically,
Fig. 3 d show superficial layer 61, cofferdam layer 62, surface region layer 63, slope s1 and s2 and surface 65, and wherein region 64 is phase
For the second area of the cofferdam layer of the first area of 65 lower section of surface.
Cofferdam pixel that the single cofferdam pixel and/or RIE of this and photo-patterning have patterned is on the contrary, wherein photo-patterning
Each of the cofferdam pixel that has patterned of single cofferdam pixel and/or RIE will usually provide short circuit from anode to cathode
Electrical path length (blue region) and normal length it is unadjustable-see Fig. 1 c.
About above-described distinct methods and embodiment, Fig. 4 shows various exemplary bracket cofferdam image.Fig. 4 a are shown
Double-developing long stent cofferdam, Fig. 4 b show that the double-developing long stent cofferdam with HIL, Fig. 4 c show the recess through RIE
(notch) long stent cofferdam, Fig. 4 d show single development cofferdam, and Fig. 4 e show that single development cofferdam with HIL is (short
(nothing) holder).
Flat thickness profile for HIL+IL is desired for maximizing OLED device performance on microcavity platform.
In ink-jet printing apparatus, thickness profile depends on the cofferdam structure of bottom.Next preferred cofferdam structure is described in detail, with reality
Now suitable flat thickness profile in the ink-jet printing apparatus of single cofferdam.Advantageously, this profile can provide from cofferdam holder to
The gentle transition of active region, this makes the HIL having printed form the flat profile for being suitable for microcavity OLED device.
Specifically consider the flat film profile using gentle holder list cofferdam+non-aqueous HIL, embodiment can be provided from enclosing
Weir holder to active region gentle transition so that the HIL that has printed forms the flat wheel for being suitable for microcavity OLED device
It is wide.Flat thickness profile for HIL+IL is desired for the performance for maximizing OLED device on microcavity platform.It is spraying
In ink print equipment, thickness profile depends on bottom cofferdam structure.Embodiment provides real in single cofferdam ink-jet printing apparatus
The now cofferdam profile of suitable flat thickness profile.
Realize that maximizing performance generally requires microcavity OLED device intima-media thickness and profile at most possible color point
Accurately control.In addition, if there are the notable inhomogeneities of HIL+IL layers of profile, then non-optimal outer coupling will occur
(out-coupling) region and performance will be damaged.
For example, being directed to ink-jet printing apparatus, the wide cross section of HIL+IL thickness is shown in FIG. 5.It can be seen that pixel
In comparison fringe region shows significant thickening with central area.CIE coordinates are inclined from target color point in that region
It moves.This causes integral device performance impairment.
A kind of cofferdam type is developed, to minimize heavy-edge amount and therefore improve the performance of printing.Work as HIL
When cannot closely follow cofferdam profile, the drastically transition from holder to ITO will cause edge to thicken.
Embodiment with gentle cofferdam holder is shown in FIG. 6, and the figure in lower part includes top annular section feature
Expression, wherein compared with no gently dipping embodiment (left-hand side), it is this it is gentle decline the lower part of right-hand side figure
In show.
It has been proved to make equipment performance maximize on ink jet printing platform using this gentle holder cofferdam type, with
So that it is comparable with SC (spin-coating equipment) data (for the data for emitting shown in the equipment of green light)：
Wherein DE=(u ' v ') is limited using u ', the v ' of CIE1976 color spaces (colour space) (" CIELUV ").
The table shows the ink-jet printing apparatus of such as gentle holder cofferdam equipment to have and the comparable performance of spin-coating equipment.
In addition, in this regard it should be noted that：From the CIE u ' v ' of CIExy to the CIELUV of 1931CIE XYZ color spaces
Transformation (that is, CIE1931 → CIE1976) be given by：
And the aberration measurement limited using u ', the v ' of CIELUV is given by：
That is, the Euclidean distance in the spaces CIE1976.
For the embodiment of such as above " gentle holder cofferdam " equipment, it to be used for CIEx the and y mesh of green emitted (NTSC)
Mark is 0.213 and 0.724 respectively.CIExy measurement results are obtained using Minolta colorimeters, and dE is to utilize CIExy
It calculates.
DE=0.02 is acceptable preferred upper limit in embodiment, and still, 0.005,0.01 or 0.015 is more desirable.
Fig. 7 shows display standard cofferdam compared to the embodiment with gentle holder cofferdam and with the thicker of greater proportion
The histogram in region.The histogram is by existing across active region on the surface region layer of the side wall encirclement by cofferdam structure
Thickness is measured at the point being regularly spaced and is obtained.Equipment with " standard cofferdam " is the equipment for having long stent, should
Holder has the thickness of substantial constant, shown in figure similar with the tops Fig. 6.Equipment with " shallow cofferdam " is with drawing money on credit
The superficial layer of frame, the holder towards equipment is gradually tapered, for example, being preferably smaller than the first of 5,10,15 or 20 degree with angle
Slope." shallow cofferdam " equipment has than the narrower thickness distribution of " standard cofferdam " equipment, so that the outer coupling in OLED
More by control (being interior coupling (incoupling) for light absorber device).
Unquestionably, many other effective alternatives also will be it may occur to persons skilled in the art that.It should manage
Solution：The present invention is not limited to the embodiment and cover for a person skilled in the art it is obvious, belong to appended claims
The modification of spirit and scope.
Claims (28)
1. a kind of method of construction electronic equipment, which includes having superficial layer and the restriction well on the superficial layer
The substrate of cofferdam structure, the cofferdam structure include electrically insulating material and have the side wall in the region for surrounding the superficial layer, by
This limits the well, which includes first electrode and part reflector layer, and the wherein part reflector layer is arranged to
Microcavity is formed, and the equipment further includes second electrode and the semiconductive material being configured between first electrode and second electrode
Material, the method includes：
It forms the cofferdam structure with the side wall and removes a part for the cofferdam structure so that the side wall quilt
Be formed as including the first slope extended from the surface region layer and the second slope for extending from first slope, wherein second tiltedly
Slope is steeper than first slope, wherein at the point separated with first slope of the side wall on the second slope there is surface energy to interrupt；
Being formed has at least one layer of layer structure, this layer of structure is configured between first electrode and second electrode and has and partly lead
Electric material,
Wherein forming this layer of structure includes：
Deposit organic solution on surface region layer and in the first slope of side wall and the second slope, with formed can solution add
The layer of work, deposited in organic solution soak first slope and the second slope until the pinning at surface energy interruption
Point；And
The deposited organic solution of drying.
2. according to the method described in claim 1, including：At least one other solution is deposited on solution processable layer,
Wherein at least one other solution is soaked until pinning point, and dries at least one other solution deposited, and
And wherein first slope and the second slope are formed so that any leakage paths between first electrode and second electrode are added
It is long.
3. method according to claim 1 or 2, wherein formation cofferdam structure includes：
On the surface of the substrate on layer formed include photoresist the first cofferdam layer；
Photo-patterning is carried out to the first cofferdam layer and is developed, with the region of exposed surface layer；
The depositing fluorinated photoresist agent solution on the region of the exposure of the first cofferdam layer and superficial layer is enclosed with forming second
Weir layer；
It dries firmly, to harden the second cofferdam layer, wherein the fluorochemical of fluorination photoresist agent solution moves during described dry firmly
The surface for moving on to the second cofferdam layer, to increase the contact angle of organic solution and the surface；And
Photo-patterning is carried out to the second cofferdam layer and is developed, with the region of exposed surface layer again and the first cofferdam of exposure
The region of layer so that the first cofferdam layer region with first slope and the second cofferdam layer with the second slope,
Wherein increased contact angle be higher than the contact angle of organic solution and first slope and the second slope, and pinning point is in
The boundary of the second cofferdam layer surface with the fluorochemical migrated.
4. according to the method described in claim 3, wherein formation cofferdam structure includes：
By the depositing fluorinated photoresist agent solution on superficial layer and dry deposited solution to harden cofferdam structure layer,
Form cofferdam structure layer, wherein the fluorochemical of fluorination photoresist agent solution it is described dry it is hard during move to cofferdam and tie
The surface of structure layer, to increase the contact angle of organic solution and the surface；
Photoresist layer is deposited and dried on cofferdam structure layer, and photo-patterning is carried out to photoresist layer and is shown
Shadow；
Dry etching steps, for etching cofferdam structure layer by developed photoresist layer, with exposed surface layer area
Domain, so that the cofferdam structure layer that etched has the side wall for the surface region layer for surrounding exposure and includes first oblique
Slope and the second slope；And
The photoresist layer for having removed developed, to expose the surface of cofferdam structure layer, the surface exposed includes described moves
The fluorochemical moved,
Wherein surface energy interrupt in include the fluorochemical migrated exposed surface and the side wall that etched it
Between interface.
5. according to the method described in claim 4, wherein formation cofferdam structure includes：
Cofferdam structure layer develop and photo-patterning, with the surface region layer that exposure is surrounded by the side wall of cofferdam structure layer,
Wherein on cofferdam structure layer deposit photoresist layer include deposited on the cofferdam structure layer of photo-patterning it is photic
Resist solution, and it includes exposed surface layer region, and exposed surface layer area again to carry out development to photoresist layer
The dry etching steps in domain extend exposed region by thinning cofferdam structure layer, and the first slope and second is consequently formed tiltedly
Slope.
6. according to the method described in claim 5, it includes by with impermeable wherein to carry out photo-patterning to photoresist layer
Penetrate the mask radiation photoresist layer in region, fractional transmission region and wholly transmissive region；And
It includes removing the region of photoresist completely and being partially removed in pass through part to carry out development to photoresist layer
Regional transmission is exposed to the photoresist region of radiation.
7. according to the method described in claim 5, wherein dry etching steps include reactive ion etching.
8. according to the method described in claim 3, wherein first slope and the second slope pass through first cofferdam layer and second
The selective material of cofferdam layer is removed and is formed.
9. according to the method described in claim 1, wherein formation cofferdam structure includes：
Cofferdam layer is formed by the depositing fluorinated photoresist agent solution on superficial layer；
It dries firmly, to harden cofferdam layer, the wherein fluorine compounds of photoresist agent solution move to cofferdam layer during described dry firmly
Surface, thus increase organic solution and surface contact angle；
Photo-patterning is carried out to the cofferdam layer hardened, which includes radiate cofferdam layer with the first dose of radiation first
Region, and the second area of the cofferdam layer is radiated with the second dose of radiation, second dose of radiation is less than the first radiation agent
Amount；
Develop to cofferdam layer, with the region of exposed surface layer and is partially removed in second dose of radiation radiation
Cofferdam layer region, the part, which removes step and provides, as a result, surrounds the region being exposed and with first slope and the
The side wall on two slopes,
Wherein pinning point is in the boundary between the cofferdam layer surface and side wall with the fluorochemical migrated.
10. according to the method described in claim 9, wherein：
Photo-patterning includes radiating cofferdam layer by the first mask and the second mask simultaneously, wherein with first the firstth area of dose
Domain includes the wholly transmissive area radiation first area by the first mask and the second mask, and with the second dose second
Region includes at least partly transmissive area radiation second area by each in the first mask and the second mask；And/or
Photo-patterning includes radiating cofferdam layer by the mask with fractional transmission region and more regional transmission, wherein with first
Dose first area radiates first area including passing through more regional transmission, and with the second dose second area packet
It includes through fractional transmission area radiation second area；And/or
This method includes the deposition of reflective device layer on the region of superficial layer, wherein：
The step of depositing fluorinated photoresist agent solution, will be fluorinated liquid deposition on reflector layer and on superficial layer；And
Photo-patterning includes radiating cofferdam layer by mask, is absorbed directly by covering wherein radiation first area includes first area
It the part of the first dosage that mould receives and absorbs being received from the first mask and reflects back into first by reflector layer
A part for dosage in region.
11. method according to claim 1 or 2, wherein electronic equipment is optoelectronic device.
12. method according to claim 1 or 2, wherein electronic equipment is light-emitting device or light absorber device.
13. method according to claim 9 or 10, wherein the cofferdam layer is made of single bank material.
14. according to the method for claim 12, wherein light-emitting device is Organic Light Emitting Diode (OLED).
15. method according to claim 1 or 2, wherein electronic equipment is OLED and organic solution is for providing sky
Cave implanted layer (HIL).
16. according to the method for claim 15, including on the solution processable layer and in first electrode and second
At least another solution processable layer is formed between electrode, another solution processable layer for provide middle layer (IL) and/
Or light-emitting layer (EL).
17. method according to claim 1 or 2, wherein：
When the second sloped region for being deposited over first slope and extend to pinning point from the first slope at least one of is worked as
When upper, the contact angle of organic solution is 10 ° or smaller；And/or
Wherein, when being deposited on the region of the cofferdam structure extended from the pinning point far from first slope, organic solution
Contact angle is 50 ° or bigger.
18. a kind of electronic equipment including substrate, which has superficial layer and limits the cofferdam knot of well on the superficial layer
Structure, the cofferdam structure include electrically insulating material and the side wall in the region with the encirclement superficial layer, thus limit the well, should
Surface region layer includes first electrode and part reflector layer, and the wherein part reflector layer is arranged to form microcavity, and
The equipment further includes second electrode and the semiconductive material that is configured between first electrode and second electrode, wherein：
A part for the cofferdam structure is removed from the side wall so that the side wall is formed with from surface region layer
The first slope of extension and from first slope extend the second slope, wherein the second slope is steeper than first slope；And
The equipment includes having at least one layer of layer structure, and at least one layer of the layer structure is solution processable layer, the layer knot
Structure has semiconductive material and is configured between first electrode and second electrode, wherein：
At least one solution processable layer has pinning point at the point separated with first slope on the second slope, described
Solution processable layer is configured on surface region layer and in the first slope of side wall and the second slope.
19. electronic equipment according to claim 18, wherein cofferdam structure include at least one photoresist layer.
20. electronic equipment according to claim 19, wherein：
The photoresist layer has the point on the second slope and includes fluorochemical；And/or
Cofferdam structure includes multiple photoresist layers, and the photoresist layer has first slope；And/or
Cofferdam structure includes the photoresist layer and first slope and the second slope for having fluorochemical.
21. the electronic equipment according to any one of claim 18 to 20, wherein first slope have relative to superficial layer
There is the oblique angle less than or equal to 20 degree.
22. electronic equipment according to claim 21, wherein oblique angle are less than 10 degree.
23. the electronic equipment according to any one of claim 18 to 20, wherein：
First slope extends up to the cofferdam structure thickness less than 300nm in the boundary with the second slope；And/or
Side wall extends from surface region, to provide the cofferdam structure thickness of at least 300nm；And/or
First slope extends beyond at least 1 μm of length along superficial layer.
24. electronic equipment according to claim 23, wherein the second slope is prolonged along superficial layer at least 8 μm of length
It stretches.
25. electronic equipment according to claim 23, wherein side wall extend along superficial layer at least 10 μm of length.
26. the electronic equipment according to any one of claim 18 to 20, wherein equipment are light-emitting devices, and its
Described in solution processable layer include organic semiconductive materials for providing hole injection layer (HIL).
27. electronic equipment according to claim 26, wherein light-emitting device are OLED.
28. electronic equipment according to claim 26, solution processable layer described in wherein at least one includes being configured at use
Another organic semiconductive materials on the material that HIL is provided, and the another kind organic semiconductive materials are for carrying
For middle layer (IL) or light-emitting layer (EL).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1314655.0A GB201314655D0 (en) | 2013-08-16 | 2013-08-16 | Hydrophobic bank |
| GB1314655.0 | 2013-08-16 |
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|---|---|---|---|---|
| CN106207012B (en) * | 2016-08-15 | 2018-07-06 | 京东方科技集团股份有限公司 | Pixel print structure and preparation method thereof, display device and inkjet printing methods |
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| CN109713021B (en) * | 2019-01-18 | 2020-05-12 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
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| US11785819B2 (en) | 2021-04-01 | 2023-10-10 | Sharp Kabushiki Kaisha | Layers for improved extraction for transparent cathode emissive displays |
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| CN101543135A (en) * | 2007-05-31 | 2009-09-23 | 松下电器产业株式会社 | Organic El device and method for manufacturing the same |
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| JP3915806B2 (en) * | 2003-11-11 | 2007-05-16 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| JP2010118509A (en) * | 2008-11-13 | 2010-05-27 | Panasonic Corp | Light-emitting element |
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- 2013-08-16 GB GBGB1314655.0A patent/GB201314655D0/en not_active Ceased
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2014
- 2014-08-14 KR KR20140105926A patent/KR20150020140A/en not_active Ceased
- 2014-08-15 JP JP2014165413A patent/JP2015057772A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101543135A (en) * | 2007-05-31 | 2009-09-23 | 松下电器产业株式会社 | Organic El device and method for manufacturing the same |
| CN101399286A (en) * | 2007-09-27 | 2009-04-01 | 三洋电机株式会社 | Semiconductor device |
| CN101855742A (en) * | 2007-12-10 | 2010-10-06 | 松下电器产业株式会社 | Organic electroluminescence device, organic electroluminescence display panel and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201314655D0 (en) | 2013-10-02 |
| CN104377311A (en) | 2015-02-25 |
| KR20150020140A (en) | 2015-02-25 |
| TW201513427A (en) | 2015-04-01 |
| TWI634686B (en) | 2018-09-01 |
| JP2015057772A (en) | 2015-03-26 |
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