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CN104350586B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN104350586B
CN104350586B CN201380029681.8A CN201380029681A CN104350586B CN 104350586 B CN104350586 B CN 104350586B CN 201380029681 A CN201380029681 A CN 201380029681A CN 104350586 B CN104350586 B CN 104350586B
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China
Prior art keywords
metal film
film
opening portion
metal
bonding pad
Prior art date
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CN201380029681.8A
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CN104350586A (zh
Inventor
理崎智光
中西章滋
樱井仁美
岛崎洸
岛崎洸一
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Ablic Inc
Original Assignee
Seiko Instruments Inc
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Publication of CN104350586A publication Critical patent/CN104350586A/zh
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Publication of CN104350586B publication Critical patent/CN104350586B/zh
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Abstract

为了抑制焊盘开口部之下的裂缝，并且不增大芯片尺寸，保护膜6具有使一部分的最上层金属膜3露出的焊盘开口部9。该焊盘开口部9为矩形且为正方形，开口宽度为d0。第二金属膜2在焊盘开口部9之下具有开口部。该开口部为矩形且为正方形，开口宽度为d4。保护膜6的开口端与第二金属膜2的开口端的距离为d3。第二金属膜2为矩形的环形状，在焊盘开口部9的内侧露出距离d3。

Description

半导体装置
技术领域
本发明涉及具有焊盘（pad）构造的半导体装置。
背景技术
为了使半导体装置进行与外部的电信号交换，采用引线接合技术，以金属引线连结半导体装置的焊盘和外部连接端子。引线接合技术是利用热、超声波、加重来将由金等形成的引线接合到半导体装置的焊盘的机械工序，因此有半导体装置受到损伤的情况。利用图11的（a）及（b），对该情况进行说明。形成在接合引线14前端的球化引线15被压接到设于半导体装置的焊盘开口部的最上层金属膜3，成为压塌的球16，接合引线14接合到焊盘开口部的最上层金属膜3。此时，在焊盘开口部之下的绝缘膜5产生裂缝18，会对半导体装置的可靠性产生影响。
在专利文献1中，记载了为了防止裂缝，通过球焊装置的毛细管构造的设计来抑制接合损伤，从而能够抑制裂缝的产生。
在专利文献2的背景技术中，记载了为了保持接合强度并防止裂缝，较厚地形成与接合引线直接接触的焊盘开口部的金属膜。由于该金属膜自身吸收接合损伤，所以抑制裂缝，并且提高了焊盘构造自身的抗裂缝性。
另外，在专利文献3中，如图12所示，示出了加厚受到接合损伤的焊盘开口部9之下的绝缘膜的有效膜厚的焊盘构造。焊盘开口部9的最上层金属膜3之下没有设置第二金属膜2，而第一金属膜1与最上层金属膜3之间的绝缘膜的厚度成为第二绝缘膜4和第三绝缘膜5的厚度的总计，从而受到接合损伤的焊盘开口部9之下的绝缘膜的有效膜厚变厚。由于该较厚的绝缘膜吸收接合损伤，所以抑制裂缝。由于能够将第一金属膜1的引线等配置在焊盘开口部9之下，所以能够减小芯片尺寸。
现有技术文献
专利文献
专利文献1：日本特开平04－069942号公报
专利文献2：日本特开2011－055006号公报
专利文献3：日本特开平11－186320号公报。
发明内容
发明要解决的课题
在专利文献1的情况下，如果接合强度降低，就会容易产生引线接合容易脱落这样的不良。
在专利文献2的情况下，焊盘构造的最上层的金属膜变厚，该金属膜的加工变得困难。其结果是，不能够充分地减小该金属膜的布线宽度，而芯片尺寸会变大。
图12所示的专利文献3的构造中，为了减小焊盘构造中的对半导体装置内部的元件的寄生电阻，而对IC的电特性不造成影响，如图13的（a）所示，通过加长从焊盘开口部9的开口端到焊盘构造的最上层金属膜3的端部为止的距离d1，或者，如图13的（b）所示，通过加长从焊盘构造的最上层金属膜3的端部到第二金属膜2的端部为止的距离d2，以能够配置多的通路（via）。然而，相应地，如图13的截面图那样，会增大焊盘构造，因此芯片尺寸会变大。
本发明鉴于如上所述芯片尺寸增大这一弱点而完成，其课题在于提供抑制焊盘开口部之下的裂缝，并且不增大芯片尺寸的半导体装置。
用于解决课题的方案
为了解决上述课题，本发明提供一种具有焊盘构造的半导体装置，其特征在于，包括：金属膜，在焊盘开口部之下具有矩形的开口部，该金属膜为矩形环形状，不在球焊时的球形焊接器用毛细管前端的倒角之下，而在所述焊盘开口部的内侧露出既定距离；绝缘膜，设置于所述金属膜之上；最上层金属膜，设置于所述绝缘膜之上；通路，不在所述焊盘开口部之下，而电连接所述金属膜与所述最上层金属膜；以及保护膜，设置于所述最上层金属膜之上，具有露出一部分的所述最上层金属膜的矩形的焊盘开口部。
发明效果
在本发明的焊盘构造中，焊盘开口部的最上层金属膜之下的金属膜不仅存在于焊盘开口部的外侧，而且也存在于除了球焊时的球形焊接器用毛细管前端的倒角之下以外的焊盘开口部的内侧。相应地，扩大了焊盘开口部的最上层金属膜之下的金属膜的面积，即便不增大焊盘构造，对半导体装置内部的元件的寄生电阻也变小。
另外，在本发明的焊盘构造中，在焊盘开口部的内侧，焊盘开口部的最上层金属膜之下的金属膜不存在于球焊时的球形焊接器用毛细管前端的倒角之下，因此在该倒角之下，受到接合损伤的焊盘开口部之下的绝缘膜的有效膜厚变厚。由于该较厚的绝缘膜吸收接合损伤，所以抑制裂缝。
附图说明
图1是示出本发明的焊盘构造的图。
图2是对焊盘构造进行球焊时的图。
图3是示出本发明的焊盘构造的图。
图4是对焊盘构造进行球焊时的图。
图5是示出本发明的焊盘构造的图。
图6是示出本发明的焊盘构造的图。
图7是示出本发明的焊盘构造的图。
图8是示出本发明的焊盘构造的图。
图9是示出本发明的焊盘构造的图。
图10是示出本发明的焊盘构造的图。
图11是示出球焊的接合损伤的图。
图12是示出现有的焊盘构造的图。
图13是示出现有的焊盘构造的图。
具体实施方式
以下，参照附图，对本发明的实施方式进行说明。
首先，利用图1说明本发明的半导体装置的焊盘构造。图1的（a）是立体图，（b）是截面图，（c）是用于说明第二金属膜和焊盘开口部的关系的平面图，未画出最上层金属膜3。
虽然未图示，但在半导体衬底11设有元件。在半导体衬底11上设置第一绝缘膜10，在第一绝缘膜10上设置第一金属膜1。元件和第一金属膜1是通过接触部12电连接的。在第一金属膜1上设置第二绝缘膜4，在第二绝缘膜4上设置第二金属膜2。第一金属膜1和第二金属膜2是通过设置在第二绝缘膜4的第一通路7而电连接的。在第二金属膜2上设置第三绝缘膜5，在第三绝缘膜5上设置最上层金属膜3。第二金属膜2和最上层金属膜3是通过未在焊盘开口部9之下配置的第二通路8而电连接的。在最上层金属膜3上设置保护膜6。
保护膜6具有露出最上层金属膜3的一部分的焊盘开口部9。该焊盘开口部9为矩形，而且在此为正方形，开口宽度为d0。第二金属膜2在焊盘开口部9之下具有开口部。该开口部也为矩形，在此为正方形，开口宽度为d4。保护膜6的开口端和第二金属膜2的开口端的距离为d3。第二金属膜2为正方形的环形状，在焊盘开口部9的内侧，仅露出距离d3。距离d3是第二金属膜2的露出量。长度之间，存在d0＝d3×2＋d4，或者，d3＝（d0－d4）/2的关系。一般而言，第二金属膜2为环形状即可。相当于设有焊盘开口部9的最上层金属膜3的正下方的部位没有第二金属膜2，因此焊盘开口部9之下的绝缘膜的有效膜厚变厚。
如已做说明的那样，图11是示出球焊的接合损伤的图，但是在因接合损伤而会产生裂缝18的情况下，该裂缝18不在压塌的球16的边缘下产生，而在球形焊接器用毛细管前端的倒角13之下产生。即，图11（b）中，裂缝18不以压塌的球16的宽度r2产生，而是具有图11（a）所示的倒角彼此的宽度r1地产生。
如图2所示，压塌的球16扩展到宽度r2，因此焊盘开口部9的开口宽度d0宽于宽度r2（d0＞r2）。另外，焊盘开口部9之下的第二金属膜2的开口宽度d4宽于倒角彼此的宽度r1（d4＞r1）。产生的接合损伤17从球形焊接器用毛细管前端的倒角13传递到焊盘开口部9的最上层金属膜3。由于在球焊时的球形焊接器用毛细管前端的倒角13之下没有第二金属膜2，所以第二绝缘膜4和第三绝缘膜5的厚度的总计成为第一金属膜1与最上层金属膜3之间的绝缘膜的厚度，在此会挡住接合损伤17。
＜效果＞如上所述，焊盘构造中，焊盘开口部9的最上层金属膜3之下的第二金属膜2不仅存在于焊盘开口部9的外侧，而且也存在于除了球焊时的球形焊接器用毛细管前端的倒角13之下以外的焊盘开口部9的内侧。相应地，扩大焊盘开口部9的最上层金属膜3之下的金属膜2的面积。因而，不增大焊盘构造，而能够增加第二金属膜与最上层金属膜之间的通路的数量及第一金属膜与第二金属膜之间的通路的数量，并减小焊盘构造对半导体装置内部的元件造成的寄生电阻。或者，通过保持通路的数量而将寄生电阻的值保持在与现有同样的情况下，也能够与第二金属膜向内侧凸出的量相应地减少各自的金属膜。
另外，焊盘构造中，在焊盘开口部9的内侧，焊盘开口部9的最上层金属膜3之下的第二金属膜2不存在于球焊时的球形焊接器用毛细管前端的倒角13之下。因而，在该倒角13之下，受到接合损伤17的焊盘开口部9之下的绝缘膜的有效膜厚变厚。由于该较厚的绝缘膜吸收接合损伤17，所以抑制裂缝。
另外，在焊盘开口部9之下的元件为ESD保护元件的情况下，如果第二金属膜2的面积变宽，则相应地，能够在第二金属膜2配置较多的第一通路7，因此在焊盘构造与ESD保护元件之间的寄生电阻变少。因而，减少电流的集中，并且提高ESD保护元件的ESD承受能力。
此外，在上述说明中，对焊盘开口部9之下存在ESD保护元件等元件的情况进行了描述，但不限于此。ESD保护元件等元件也可以从焊盘分离而配置，在此情况下，元件和焊盘经由第一金属膜及第二金属膜等而电连接。
另外，上述说明中，以3层金属工艺制造了半导体装置，但并不限定于此。也可以用2层金属工艺制造半导体装置。
另外，在前面的说明中将设于保护膜6的焊盘开口部9及设于第二金属膜2的开口部的形状都设为正方形，但并不限于此。只要能满足说明中所使用的以不等式表示的长度之间的关系，既可为长方形，也可为圆形。可采用各种组合。
＜变形例1＞在图3中示出本发明的其他焊盘构造。（a）是截面图，（b）是用于主要说明第二金属膜和焊盘开口部的关系的平面图。图4是示出对焊盘构造进行球焊的情况的图。
与前述的实施方式进行比较，则不同点在于：在此，将矩形的第二个第二金属膜19以不与焊盘开口部9之下的矩形环形状的第一个第二金属膜2相接的方式配置在焊盘开口部9之下。第二个第二金属膜19的宽度d5，有必要如图4所示，窄于倒角彼此的宽度r1（d5＜r1）。
如图4所示，接合损伤17从球形焊接器用毛细管前端的倒角13产生到焊盘开口部9的最上层金属膜3，因此第二个第二金属膜19以避开该倒角13之下而完全收敛于倒角彼此形成的宽度r1之中的方式配置。因而，受到接合损伤17的焊盘开口部9之下的绝缘膜的有效膜厚保持原来较厚的厚度。由于该较厚的绝缘膜吸收接合损伤17，所以抑制裂缝。
此外，如图5所示，第二个第二金属膜19也可为圆形。另外，如图6所示，第二个第二金属膜19也可为由多个矩形构成的点图案。另外，虽然未图示，但第二个第二金属膜19也可为由多个圆形构成的点图案。
＜变形例2＞图7是示出本发明的焊盘构造的图，（a）是截面图，（b）是用于主要说明第二金属膜和焊盘开口部的关系的平面图。
与变形例1相比，不同点在于：在此，第二个第二金属膜19通过第二通路8来与最上层金属膜3电连接。另外，第二个第二金属膜19通过第一通路7也与第一金属膜1电连接。
焊盘构造中，第一通路7、第二通路8和第二金属膜19重新对电传导做出贡献，因此焊盘构造所具有的寄生电阻变小。
此外，如图8所示，与图5同样地将第二个第二金属膜19设为圆形，其中也可以配置第二通路8。另外，如图9所示，与图6同样地将第二个第二金属膜19设为矩形的点图案，其中可以配置第二通路8。
＜变形例3＞图10是示出本发明的焊盘构造的图。
与前述的实施方式相比，不同点在于：在此，焊盘开口部9之下的矩形环形状的第二金属膜2，如图10所示，包含狭缝30。
此外，虽然未图示，但第二金属膜2也可以根据布局图案的限制，设为“コ”字的形状或“L”字的形状等。
[标号说明]
1 第一金属膜；2 第二金属膜；3 最上层金属膜；4 第二绝缘膜；5 第三绝缘膜；6保护膜；7 第一通路；8 第二通路；9 焊盘开口部；10 第一绝缘膜；11 半导体衬底；12 接触部；13 球形焊接器用毛细管前端的倒角；14 接合引线；15 球化引线；16 压塌的球；17 接合损伤；18 裂缝；19 第二金属膜。

Claims (11)

1.一种具有由多层金属膜构成的焊盘构造的半导体装置，其特征在于，包括：
半导体衬底；
第一绝缘膜，设置在所述半导体衬底的表面；
第一金属膜，设置在所述第一绝缘膜上；
第二绝缘膜，设置在所述第一金属膜上；
第一个第二金属膜，设置在所述第二绝缘膜上；
第一通路，连接设置在所述第二绝缘膜的所述第一金属膜与所述第一个第二金属膜；
第三绝缘膜，设置在所述第一个第二金属膜上；
最上层金属膜，设置在所述第三绝缘膜上；
第二通路，连接设置在所述第三绝缘膜的所述第一个第二金属膜与所述最上层金属膜；以及
保护膜，设置在所述最上层金属膜上，并且具有用于露出所述最上层金属膜的表面的一部分的焊盘开口部，
所述第一个第二金属膜为环形状，在所述焊盘开口部之下具有开口部，所述开口部的边缘位于球焊中所使用的球形焊接器用毛细管前端的倒角的外侧，并且所述第一个第二金属膜在所述焊盘开口部的内侧露出既定露出量。
2.如权利要求1所述的半导体装置，其中：所述焊盘开口部及所述开口部均为正方形。
3.如权利要求2所述的半导体装置，其特征在于：在设所述露出量为d3时，若设所述焊盘开口部的一边的长度为d0、与所述一边成为相同方向的、所述第一个第二金属膜的所述开口部的一边的长度为d4，则所述露出量满足d3＝（d0－d4）/2的关系。
4.如权利要求2所述的半导体装置，其特征在于：若设所述焊盘开口部的一边的长度为d0、所述第一个第二金属膜的位于所述开口部的一边之下的一边的长度为d4、压塌的球的宽度为r2、倒角彼此的宽度为r1，则满足d0＞r2以及d4＞r1的关系。
5.如权利要求1所述的半导体装置，其特征在于：还具备截面为矩形或圆形的第二个第二金属膜，在球焊时的所述倒角之下没有所述第二个第二金属膜，所述第二个第二金属膜以不与所述焊盘开口部之下的环形状的所述第一个第二金属膜相接的方式设置在所述焊盘开口部之下。
6.如权利要求1所述的半导体装置，其特征在于：还具备截面具有作为多个矩形或圆形的集合的点图案的第二个第二金属膜，在球焊时的所述倒角之下没有所述第二个第二金属膜，所述第二个第二金属膜以不与所述焊盘开口部之下的环形状的所述第一个第二金属膜相接的方式设置在所述焊盘开口部之下。
7.如权利要求5或6所述的半导体装置，其特征在于：所述矩形或圆形的所述第二个第二金属膜，通过所述第二通路与所述最上层金属膜电连接。
8.如权利要求1所述的半导体装置，其特征在于：所述第一个第二金属膜具有狭缝。
9.如权利要求1所述的半导体装置，其特征在于：还具备设置在所述焊盘开口部之下的元件。
10.如权利要求9所述的半导体装置，其特征在于：所述元件为ESD保护元件。
11.一种具有由多层金属膜构成的焊盘构造的半导体装置，其特征在于，包括：
半导体衬底；
第一绝缘膜，设置在所述半导体衬底的表面；
第一金属膜，设置在所述第一绝缘膜上；
第二绝缘膜，设置在所述第一金属膜上；
第一个第二金属膜，设置在所述第二绝缘膜上；
第一通路，连接设置在所述第二绝缘膜的所述第一金属膜与所述第一个第二金属膜；
第三绝缘膜，设置在所述第一个第二金属膜上；
最上层金属膜，设置在所述第三绝缘膜上；
第二通路，连接设置在所述第三绝缘膜的所述第一个第二金属膜与所述最上层金属膜；以及
保护膜，设置在所述最上层金属膜上，并且具有用于露出所述最上层金属膜的表面的一部分的焊盘开口部，
所述第一个第二金属膜为环形状，在所述焊盘开口部之下具有开口部，所述第一个第二金属膜在所述焊盘开口部的内侧露出既定露出量，
所述开口部的边缘位于在所述最上层金属膜的所述焊盘开口部形成的压塌的球所刻的球形焊接器用毛细管前端的倒角的迹线的外侧。
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