CN104237983B - The method efficiently making high accuracy multi-step microlens array - Google Patents
The method efficiently making high accuracy multi-step microlens array Download PDFInfo
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- CN104237983B CN104237983B CN201410519354.7A CN201410519354A CN104237983B CN 104237983 B CN104237983 B CN 104237983B CN 201410519354 A CN201410519354 A CN 201410519354A CN 104237983 B CN104237983 B CN 104237983B
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Abstract
The present invention relates to a kind of efficient method making high accuracy multi-step microlens array, step array to be produced is divided into some groups, including first group, second group, first group end to end with second group, and each step often organized is degree of depth continuous print；Synchronize to make first group of each step with second group, form two groups of steps that the corresponding degree of depth is identical；By the degree of depth certain for second group of step entirety etching, form degree of depth continuous print step array with first group of step.The method using the present invention, packet synchronization makes, is greatly improved make efficiency, provides cost savings.
Description
Technical field
The present invention relates to a kind of method making multi-step microlens array.
Background technology
Microlens array be a series of a diameter of millimeter, micron dimension microminiature lens by necessarily rearranging
Array.Lenticule manufactured by micro-optic technology is little with its volume, lightweight, just with microlens array
In advantages such as integrated, arrays, it has also become new scientific research development direction.
Along with the fast development of modern information technologies, lenticule is the most extensive in the application of every field.From mesh
Coming to see, lenticule militarily or all plays very important effect on civilian.Day,
Some developed countries such as American and Britain, moral, have caused the great attention of government department to lenticular research,
Competitively invest money in developing this optics Disciplinary Frontiers and militarily, as infrared acquisition, precise guidance, scouting,
The application of the aspects such as operation auxiliary when search and early warning and night and vile weather.At civil area, micro-
Lens also have been supplied in photocopier, image analyzer, facsimile machine, photographing unit and medical sanitary apparatus.
Utilize lenticule can converge light, improve the factor of filling a vacancy of device, solve due to planar array detector pixel chi
Constantly reducing of very little requirement and the optics cross-talk that occurs, fill factor, curve factor are the highest and under detectivity, degradation is asked
Topic.
Diffraction microlens according to Fresnel zone plate principle design, makes circular step, each ring-type
Rank are centered by optical axis, and each annulus is equivalent to an independent plane of refraction, the equal energy of these circular band
Incident ray is made to converge to same focus. number of steps is the most, and its diffraction efficiency is the highest.
Microlens array is frequently with the manufacture method of chemical wet etching.Since binary optical proposes, overlap lithography skill
Art is particularly suitable for the making of diffraction microlens array, and the most lenticular border is easily able to neat and sharp
Sharp, activity coefficient up to 100%, and lightweight, cost is low, be prone to miniaturization, array.
Its precision of traditional manufacture method is ensured by mask plate.Owing to exposing essence in a photolithographic process
Degree, alignment precision and the problem such as the impact of development precision and error, lenticule cumulative error is bigger, seriously drops
The low optical properties such as its diffraction efficiency.So it is high-precision micro-to utilize traditional manufacture method to be difficult to making
Mirror.
Summary of the invention
It is an object of the invention to provide a kind of method making multi-step microlens array, in order to solve existing system
Make method Production Time length, problem that cost is high.
For achieving the above object, the solution of the present invention includes:
The method efficiently making high accuracy multi-step microlens array, produces initial deep in substrate at equal intervals
The step of degree, is then divided into some groups by step array to be produced, including first group, second group, and first
Organizing end to end with second group, each step often organized is degree of depth continuous print；Synchronize to make first group and second group
Each step, form two groups of steps that the corresponding degree of depth is identical；By the degree of depth certain for second group of step entirety etching,
Degree of depth continuous print step array is formed with first group of step.
The method of described making multi-step microlens array is applicable to sacrifice layer production method or back-exposure
Production method；In operation, use barrier bed or do not use barrier bed.
In manufacturing process, the stepped area etched is protected, unprotected region is performed etching；
In operation, use barrier bed or do not use barrier bed.
Described sacrifice layer production method is: make sacrifice layer at making layer upper surface, in sacrifice layer upper surface system
Make barrier bed, at barrier bed upper surface spin coating photoresist, block non-lithographic region with mask plate, only expose
One patterned area, the 3rd patterned area, the 5th patterned area, the 7th patterned area, the 9th patterned area,
11st patterned area, the 13rd patterned area, the 15th patterned area, to described first patterned area,
3rd patterned area, the 5th patterned area, the 7th patterned area, the 9th patterned area, the 11st photoetching district
After territory, the 13rd patterned area, the 15th patterned area remove barrier bed and sacrifice layer, perform etching, obtain
Must have concordant the first table top, the 3rd quasi-table top, the 5th quasi-table top, the 7th table top, the 9th table top,
Tenth table top, the 13rd quasi-table top, the first semi-finished product of the 15th quasi-table top surely；
Make photoresist at described first semi-finished product upper surface, block non-lithographic region with mask plate, only expose
3rd patterned area and neighboring region, the 7th patterned area and described 7th photoetching of described 3rd patterned area
The neighboring region in region, the 11st patterned area and the neighboring region and the tenth of described 11st patterned area
Five patterned area and the neighboring region of described 15th patterned area, remove the 3rd patterned area and the 3rd photoetching
Area adjacency region surface photoresist, the 7th patterned area and the neighboring region surface of described 7th patterned area
Photoresist, the photoresist on the neighboring region surface of the 11st patterned area and described 11st patterned area,
And the 15th photoresist on neighboring region surface of patterned area and described 15th patterned area, to the 3rd
Patterned area, the 7th patterned area, the 11st patterned area and the 15th patterned area perform etching, it is thus achieved that
Threeth table top lower than the first table top, the 7th quasi-table top, the tenth table top and the 15th quasi-table top surely, go
Fall remaining photoresist, it is thus achieved that the second semi-finished product；
Make protective layer at described second semi-finished product upper surface, peel off on the second semi-finished product remaining sacrifice layer and
Barrier bed, and except the first table top, the 3rd table top, the 5th quasi-table top, the 7th quasi-table top, the 9th quasi-table top,
Tenth table top, the 13rd quasi-table top and the protective layer of the 15th quasi-table top upper surface surely, is retaining First
Face, the 3rd table top, the 5th quasi-table top, the 7th quasi-table top, the 9th quasi-table top, the tenth surely table top, the tenth
Second semi-finished product upper surface of the protective layer of three quasi-table tops and the 15th quasi-table top upper surface makes sacrifice layer,
Sacrifice layer upper surface makes barrier bed, makes photoresist at barrier bed upper surface, blocks non-lithographic with mask plate
Region, only exposes the second patterned area and the second patterned area neighboring region, the 6th patterned area and the 6th light
Carve area adjacency region, the tenth patterned area and the tenth patterned area neighboring region and the 14th patterned area
With the 14th patterned area neighboring region, to described second patterned area, the 6th patterned area, the tenth photoetching
After region and the 14th patterned area remove barrier bed and sacrifice layer, perform etching, it is thus achieved that lower than the first table top
And second table top, sixth quasi-table top, tenth quasi-table top and the ten four quasi-table top higher than the 3rd table top, remove
Remaining protective layer, it is thus achieved that the 3rd semi-finished product；
Make photoresist at described 3rd semi-finished product upper surface, block non-lithographic region with mask plate, only expose
5th patterned area, the 6th patterned area, the 7th patterned area, the 13rd patterned area, the 14th photoetching
Region and the 15th patterned area, to described 5th patterned area, the 6th patterned area, the 7th patterned area,
13rd patterned area, the 14th patterned area and the 15th patterned area perform etching, it is thus achieved that reduce successively
The 5th table top, the 6th table top, the 7th table top, the 13rd quasi-table top, the 14th quasi-table top and the 15th accurate
4th semi-finished product of table top；
Make protective layer at described 4th semi-finished product upper surface, peel off on the 4th semi-finished product remaining sacrifice layer and
Barrier bed, and except the 4th table top, the protective layer of the 12nd table top upper surface, retain the second table top, the
Three table tops, the 5th table top, the 6th table top, the 7th table top, the 8th table top, the 9th table top, the tenth table top,
11st table top, the 13rd table top, the 14th table top, the 15th table top upper surface protective layer the 4th half
Finished product upper surface makes sacrifice layer, makes barrier bed at sacrifice layer upper surface, makes light at barrier bed upper surface
Photoresist, blocks non-lithographic region with mask plate, only exposes the 4th patterned area and the 4th patterned area adjacent area
Territory, the 12nd patterned area and the 12nd patterned area neighboring region, to described 4th patterned area, the tenth
After two patterned area remove barrier bed and sacrifice layer, perform etching, it is thus achieved that and ratio five lower than the 3rd table top
The 4th table top that face is high, the ten two quasi-table top lower and higher than the 13rd table top than the 11st table top, it is thus achieved that the
Five semi-finished product；
Make photoresist at described 5th semi-finished product upper surface, block non-lithographic region with mask plate, only expose
9th patterned area, the tenth patterned area, the 11st patterned area, the 12nd patterned area, the 13rd light
Carve region, the 14th patterned area and the 15th patterned area, to described 9th patterned area, the tenth photoetching
Region, the 11st patterned area, the 12nd patterned area, the 13rd patterned area, the 14th patterned area
Perform etching with the 15th patterned area, it is thus achieved that the 9th table top that reduces successively, the tenth table top, the 11st
Face, the 12nd table top, the 13rd table top, the 14th table top and the 6th semi-finished product of the 15th table top；
Make protective layer at described 6th semi-finished product upper surface, peel off on the 5th semi-finished product remaining sacrifice layer and
Barrier bed, and except the protective layer of the 9th table top upper surface, retain the first table top, second, third table top,
4th table top, the 5th table top, the 6th table top, the 7th table top, the 9th table top, the tenth table top, the 11st
Face, the 12nd table top, the 13rd table top, the 14th table top, the 15th table top upper surface protective layer
Six semi-finished product upper surfaces make photoresist, block non-lithographic region with mask plate, only expose the 8th patterned area
With the 8th patterned area neighboring region, the 8th patterned area is performed etching, it is thus achieved that and ratio lower than the 7th table top
The 8th table top that 9th table top is high, removes remaining protective layer, it is thus achieved that upper surface has 16 ladder table tops
Making layer.
Described sacrifice layer uses polyimides or photoresist, and described barrier bed uses chromium, and described protective layer is adopted
Use silicon dioxide.
Making layer is quartz, silicon, germanium.
Described back-exposure mode is: make barrier bed at making layer upper surface, in barrier bed upper surface spin coating
Positive photoresist, blocks non-lithographic region with mask plate, only expose the first patterned area, the 3rd patterned area,
5th patterned area, the 7th patterned area, the 9th patterned area, the 11st patterned area, the 13rd photoetching
Region, the 15th patterned area, to described first patterned area, the 3rd patterned area, the 5th patterned area,
7th patterned area, the 9th patterned area, the 11st patterned area, the 13rd patterned area, the 15th light
Carve after region removes barrier bed, perform etching, it is thus achieved that have concordant the first table top, the 3rd quasi-table top, the
Five quasi-table tops, the 7th table top, the 9th table top, the tenth table top, the 13rd quasi-table top, the 15th accurate surely
First semi-finished product of table top；
Make positive photoresist at described first semi-finished product upper surface, block non-lithographic region with mask plate, only
Expose the 3rd patterned area and the neighboring region of described 3rd patterned area, the 7th patterned area and the described 7th
The neighboring region of patterned area, the 11st patterned area and the neighboring region of described 11st patterned area and
15th patterned area and the neighboring region of described 15th patterned area, remove the 3rd patterned area and the 3rd
The positive photoresist on patterned area neighboring region surface, the 7th patterned area and the neighbour of described 7th patterned area
Connect the positive photoresist of region surface, the 11st patterned area and the neighboring region of described 11st patterned area
The positive photoresist on surface, and the 15th patterned area and the neighboring region table of described 15th patterned area
The positive photoresist in face, to the 3rd patterned area, the 7th patterned area, the 11st patterned area and the 15th
Patterned area performs etching, it is thus achieved that threeth table top lower than the first table top, the 7th quasi-table top, the tenth surely
Table top and the 15th quasi-table top, remove remaining positive photoresist, it is thus achieved that the second semi-finished product；
Described second semi-finished product upper surface make protective layer, by back-exposure development retain the first table top,
3rd table top, the 5th quasi-table top, the 7th quasi-table top, the 9th quasi-table top, the tenth table top, the 13rd accurate surely
Second semi-finished product upper surface of the protective layer of table top and the 15th quasi-table top upper surface makes positive photoresist, uses
Mask plate blocks non-lithographic region, only expose the second patterned area and the second patterned area neighboring region, the 6th
Patterned area and the 6th patterned area neighboring region, the tenth patterned area and the tenth patterned area neighboring region with
And the 14th patterned area and the 14th patterned area neighboring region, to the second patterned area, the 6th photoetching district
After territory, the tenth patterned area and the 14th patterned area remove barrier bed, perform etching, it is thus achieved that compare First
The second table top, the 6th quasi-table top, the tenth quasi-table top and the 14th quasi-table top that face is low and higher than the 3rd table top,
Remove remaining protective layer, it is thus achieved that the 3rd semi-finished product；
Make positive photoresist at described 3rd semi-finished product upper surface, block non-lithographic region with mask plate, only
Expose the 5th patterned area, the 6th patterned area, the 7th patterned area, the 13rd patterned area, the 14th
Patterned area and the 15th patterned area, to described 5th patterned area, the 6th patterned area, the 7th photoetching
Region, the 13rd patterned area, the 14th patterned area and the 15th patterned area perform etching, it is thus achieved that depend on
5th table top of secondary reduction, the 6th table top, the 7th table top, the 13rd quasi-table top, the 14th quasi-table top and
4th semi-finished product of 15 quasi-table tops；
Make protective layer at described 4th semi-finished product upper surface, be developed in reservation second by back-exposure
Face, the 3rd table top, the 5th table top, the 6th table top, the 7th table top, the 8th table top, the 9th table top, the tenth
Table top, the 11st table top, the 13rd table top, the 14th table top, the protective layer of the 15th table top upper surface
4th semi-finished product upper surface makes positive photoresist, blocks non-lithographic region with mask plate, only exposes the 4th light
Carve region and the 4th patterned area neighboring region, the 12nd patterned area and the 12nd patterned area adjacent area
Territory, after the 4th patterned area, the 12nd patterned area are removed barrier bed, performs etching, it is thus achieved that ratio the 3rd
The 4th table top that table top is low and higher than the 5th table top, tenth lower and higher than the 13rd table top than the 11st table top
Two quasi-table tops, it is thus achieved that the 5th semi-finished product；
Make positive photoresist at described 5th semi-finished product upper surface, block non-lithographic region with mask plate, only
Expose the 9th patterned area, the tenth patterned area, the 11st patterned area, the 12nd patterned area, the tenth
Three patterned area, the 14th patterned area, the 15th patterned area and the 16th patterned area, to described
Nine patterned area, the tenth patterned area, the 11st patterned area, the 12nd patterned area, the 13rd photoetching
Region, the 14th patterned area, the 15th patterned area and the 16th patterned area perform etching, it is thus achieved that depend on
9th table top of secondary reduction, the tenth table top, the 11st table top, the 12nd table top, the 13rd table top, the tenth
Four table top the 15th table top and the 6th semi-finished product of the 16th table top；
Make protective layer at described 6th semi-finished product upper surface, be developed in reservation First by back-exposure
Face, second, third table top, the 4th table top, the 5th table top, the 6th table top, the 7th table top, the 9th table top,
Tenth table top, the 11st table top, the 12nd table top, the 13rd table top, the 14th table top, the 15th table top,
6th semi-finished product upper surface of the protective layer of the 16th table top upper surface makes positive photoresist, hides with mask plate
Gear non-lithographic region, only exposes the 8th patterned area and the 8th patterned area neighboring region, to the 8th photoetching district
After barrier bed is removed in territory, perform etching, it is thus achieved that eightth table top lower and higher than the 9th table top than the 7th table top,
Remove protective layer and positive photoresist, it is thus achieved that upper surface has the making layer of 16 ladder table tops.
Described protective layer uses negative polyimide or negative photoresist, and described barrier bed uses chromium.
Described making layer is the quartz of ultraviolet light material.
The method using the present invention, packet synchronization makes, is greatly improved make efficiency, provides cost savings.
As for 16 steps, by process optimization, reticle quantity being optimized minimizing so that make 16
Step high accuracy microlens array only needs seven pieces of versions, is greatly saved cost of manufacture.
It addition, the present invention is by protecting etch areas, unprotected region is performed etching, effectively
The region stopping non-etching, etch areas needed for accurate etching, solve lenticule dexterously and make because covering
The error problem easily occurred in the operations such as masterplate alignment, photoetching, etching, meets lenticule manufacturing process
Middle high-precision requirement, effectively ensures and improves the optical properties such as lenticule diffraction benefit.
Accompanying drawing explanation
Fig. 1～Figure 10 is that the present invention uses sacrificial layer technology to make 16 step microlens array process signals
Figure；Fig. 1 is etching process schematic diagram of the present invention；Fig. 2 is the secondarily etched process schematic of the present invention；
Fig. 3 is that the present invention once peels off sacrifice layer protection process schematic；Fig. 4 is that three etching processes of the present invention are shown
It is intended to；Fig. 5 is four etching process schematic diagrams of the present invention；Fig. 6 is that secondary of the present invention peels off sacrifice layer protection
Process schematic；Fig. 7 is five etching process schematic diagrams of the present invention；Fig. 8 is six etching processes of the present invention
Schematic diagram；Fig. 9 is that the present invention peels off sacrifice layer protection process schematic for three times；Figure 10 is the present invention seven times
Etching process schematic diagram；
Wherein: a1 is making layer；A2 is sacrifice layer；A3 is barrier bed；A4 is positive photoresist；a501、
A502, a503, a504, a505, a506, a507 are multi-step diffraction microlens mask plate；A6 is for protecting
Sheath；
Figure 11～Figure 20 is that the present invention uses back-exposure fabrication techniques 16 step microlens array process to show
It is intended to；Figure 11 is etching process schematic diagram of the present invention；Figure 12 is the signal of the present invention secondarily etched process
Figure；Figure 13 is back-exposure protection process schematic of the present invention；Figure 14 is that the present invention three times is etched
Journey schematic diagram；Figure 15 is four etching process schematic diagrams of the present invention；Figure 16 is secondary back-exposure of the present invention
Protection process schematic；Figure 17 is five etching process schematic diagrams of the present invention；Figure 18 is that the present invention carves for six times
Erosion process schematic；Figure 19 is three back-exposure protection process schematic of the present invention；Figure 20 is the present invention
Seven etching process schematic diagrams；
Wherein: b1 is making layer；B2 is barrier bed；B3 is positive photoresist；B4 protective layer；b501、
B502, b503, b504, b505, b506, b507 are multi-step microlens array mask plate.
Figure 21 is the 16 step lenticule schematic diagrams that the present invention makes.
Detailed description of the invention
The present invention will be further described in detail below in conjunction with the accompanying drawings.
Embodiment 1
The present invention provides a kind of method of ingenious making multi-step microlens array, is applied to 16 step silicon micro-
Lens arra, specific embodiment includes:
1.1.1, once etch, see Fig. 1.
1) silicon chip a1 is cleaned up, one layer of sacrifice layer a2 of spin coating, then grown chromium film a3,
One layer of positive photoresist a4 of rear spin coating；
2) carrying out photoetching development with mask plate a501, mask plate a501 includes eight annulus, photoresist herein
Exposure imaging region is equal with dry etching region；
3) remove silicon chip a1 surface chromium film a3, clean positive photoresist a4；
4) etching sacrificial layer a2, exposes the region needing to carry out dry etching, uses dry etching technology to carry out
Once etch, after etching, take out silicon chip a1.
1.1.2, secondarily etched, refer to Fig. 2.
1) silicon chip a1 is first cleaned up, one layer of positive photoresist a4 of spin coating；
2) carrying out being directed at photoetching development corrosion with mask plate a502, mask plate a502 includes four annulus herein,
Photoresist exposure imaging region is more than dry etching region, on the one hand reduces the requirement of mask plate alignment precision,
On the other hand during etching, photoresist and chromium film work as etching barrier layer jointly, and etching precision is ensured by both, carve
During erosion, chromium film can compensate for positive photoresist photoetching development and is directed at the error caused；
3) silicon chip a1 employing dry etching technology is carried out secondarily etched, take out silicon chip 1 after etching, go
Except remaining photoresist.
1.1.3, etch for three times, see Fig. 3, Fig. 4.
1) silicon chip a1 is cleaned up, make protective layer a6；
2) chromium film a3 is removed, before remaining protective layer need to be protected while removing sacrifice layer a2 with stripping means
The region that two steps are etched；
3) one layer of sacrifice layer a2 of spin coating on silicon chip a1, has then grown chromium film a3；
4) at one layer of positive photoresist a4 of silicon chip a1 surface spin coating, photoetching development is carried out with mask plate a503
Corrosion, exposes the region needing to carry out dry etching.Mask plate a503 includes four annulus, photoetching herein
Glue exposure imaging region is more than dry etching region, because of the existence of protective layer, forms a kind of self aligned mode,
Reducing the required precision in alignment procedures, the most well ensure that the precision of etching, etching precision is by protecting
Layer ensures；
5) remove silicon chip a1 surface chromium film a3, etching sacrificial layer a2, expose and need to carry out dry etching
Region；
6) use dry etching technology to carry out three etchings, after etching, take out silicon chip；By silicon chip a1 table
The remaining photoresist in face is removed.
1.1.4, etch for four times, refer to Fig. 5.
1) silicon chip a1 is made positive photoresist a4；
2) carrying out being directed at photoetching development corrosion with mask plate a504, mask plate a504 includes six annulus herein,
Photoresist exposure imaging region is more than dry etching region, on the one hand reduces the requirement of mask plate alignment precision,
On the other hand during etching, photoresist and chromium film work as etching barrier layer jointly, and etching precision is ensured by both, carve
During erosion, chromium film can compensate for positive photoresist photoetching development and is directed at the error caused；
3) silicon chip a1 employing dry etching technology is carried out four etchings, take out silicon chip 1 after etching, go
Except remaining photoresist.
1.1.5, etch for five times, see Fig. 6, Fig. 7.
1) silicon chip a1 is made protective layer a6；
2) chromium film a3 is removed, before remaining protective layer need to be protected while removing sacrifice layer a2 with stripping means
The region that four steps are etched；
3) one layer of sacrifice layer a2 of spin coating on a silicon substrate, has then grown chromium film a3；
4) make positive photoresist a4 on silicon chip a1 surface, carry out photoetching development corrosion with mask plate a505,
Expose the region needing to carry out dry etching.Mask plate a505 includes two annulus herein, and photoresist exposes
Developing regional is more than dry etching region, and principle is the same, because of the existence of sacrifice layer, is formed a kind of self aligned
Mode, reduces the required precision in alignment procedures, the most well ensure that the precision of etching, etching precision
Ensured by protective layer；
5) remove silicon chip a1 surface chromium film a3, etching sacrificial layer a2, expose and need to carry out dry etching
Region；
6) use dry etching technology to carry out five etchings, after etching, take out silicon chip；By silicon chip a1 table
The remaining photoresist in face is removed.
1.1.6, etch for six times, refer to Fig. 8.
1) silicon chip a1 is made positive photoresist a4；
2) carrying out being directed at photoetching development corrosion with mask plate a506, mask plate a506 includes seven annulus herein,
Photoresist exposure imaging region is more than dry etching region, on the one hand reduces the requirement of mask plate alignment precision,
On the other hand during etching, photoresist and chromium film work as etching barrier layer jointly, and etching precision is ensured by both, carve
During erosion, chromium film can compensate for positive photoresist photoetching development and is directed at the error caused；
3) silicon chip a1 employing dry etching technology is carried out six etchings, take out silicon chip 1 after etching, go
Except remaining photoresist.
1.1.7, etch for seven times, see Fig. 9, Figure 10, Figure 21.
1) silicon chip a1 is made protective layer a6；
2) chromium film a3 is removed, before remaining protective layer need to be protected while removing sacrifice layer a2 with stripping means
The region that six steps are etched；
3) make positive photoresist a4 on silicon chip a1 surface, carry out photoetching development corrosion with mask plate a507,
Expose the region needing to carry out dry etching.Mask plate a507 includes an annulus herein, and photoresist exposes
Developing regional is more than dry etching region, and principle is the same, because of the existence of sacrifice layer, is formed a kind of self aligned
Mode, reduces the required precision in alignment procedures, the most well ensure that the precision of etching, etching precision
Ensured by protective layer；
4) silicon chip a1 employing dry etching technology is carried out seven etchings, after etching, take out silicon chip a1；
The remaining photoresist in silicon chip a1 surface and protective layer are removed.
The present invention uses sacrificial layer technology, the material such as quartz being applicable not only to ultraviolet light, and is applicable to
Impermeable ultraviolet light but the materials such as matching is higher, the silicon of low cost, germanium.Above example have employed barrier bed,
Relative to not using barrier bed, effect is more preferable.
Embodiment 2
The present invention provides a kind of method of ingenious making multi-step microlens array, is applied to 16 step quartz
Microlens array, specific embodiment includes:
2.1.1, once etch, see Figure 11.
1) quartz substrate b1 is cleaned up, grown chromium film b2, be then spin coated onto one layer of positive photoresist b4；
2) carrying out photoetching development with mask plate b501, mask plate b501 includes eight annulus, photoresist herein
Exposure imaging region is equal with dry etching region；
3) remove quartz substrate b1 surface chromium film b2, clean positive photoresist b3；
4) use dry etching technology to needing the region carrying out dry etching once to etch, take after etching
Go out quartz substrate b1.
2.1.2, secondarily etched, refer to Figure 12.
1) quartz substrate b1 is first cleaned up, one layer of positive photoresist b3 of spin coating；
2) carrying out being directed at photoetching development corrosion with mask plate b502, mask plate b502 includes four annulus herein,
Photoresist exposure imaging region is more than dry etching region, on the one hand reduces the requirement of mask plate alignment precision,
On the other hand during etching, photoresist and chromium film work as etching barrier layer jointly, and etching precision is ensured by both, carve
During erosion, chromium film can compensate for positive photoresist photoetching development and is directed at the error caused；
3) quartz substrate b1 employing dry etching technology is carried out secondarily etched, after etching, take out quartz substrate
B1, removes remaining photoresist.
2.1.3, etch for three times, see Figure 13, Figure 14.
1) quartz substrate b1 is cleaned up, make protective layer b4；
2) using back-exposure technology, chromium film b2 to serve as reticle, remaining protective layer need to protect first two steps to carve
The region lost；
3) at one layer of positive photoresist b3 of quartz substrate b1 surface spin coating, carry out photoetching with mask plate b503 and show
Shadow corrodes, and exposes the region needing to carry out dry etching.Mask plate b503 includes four annulus, light herein
Photoresist exposure imaging region is more than dry etching region, because of the existence of protective layer, forms a kind of self aligned side
Formula, reduces the required precision in alignment procedures, the most well ensure that the precision of etching, etching precision by
Protective layer ensures；
4) quartz substrate b1 surface chromium film b2 is removed；
5) quartz substrate b1 employing dry etching technology is carried out three etchings, after etching, take out quartz substrate
b1；The remaining photoresist in quartz substrate b1 surface is removed.
2.1.4, etch for four times, refer to Figure 15.
1) quartz substrate b1 is made positive photoresist b3；
2) carrying out being directed at photoetching development corrosion with mask plate b504, mask plate b504 includes six annulus herein,
Photoresist exposure imaging region is more than dry etching region, on the one hand reduces the requirement of mask plate alignment precision,
On the other hand during etching, photoresist and chromium film work as etching barrier layer jointly, and etching precision is ensured by both, carve
During erosion, chromium film can compensate for positive photoresist photoetching development and is directed at the error caused；
3) quartz substrate b1 employing dry etching technology is carried out four etchings, after etching, takes out quartz substrate 1,
Remove remaining photoresist.
2.1.5, etch for five times, see Figure 16, Figure 17.
1) quartz substrate b1 is made protective layer b4；
2) using back-exposure technology, chromium film b2 to serve as reticle, remaining protective layer need to protect front four steps to carve
The region lost；
3) make positive photoresist b3 on quartz substrate b1 surface, carry out photoetching development with mask plate b505 rotten
Erosion, exposes the region needing to carry out dry etching.Mask plate b505 includes two annulus, photoresist herein
Exposure imaging region is more than dry etching region, and principle is the same, because of the existence of sacrifice layer, is formed a kind of from right
Accurate mode, reduces the required precision in alignment procedures, the most well ensure that the precision of etching, etching
Precision is ensured by protective layer；
4) quartz substrate b1 surface chromium film b2 is removed；
5) quartz substrate b1 employing dry etching technology is carried out five etchings, after etching, take out quartz substrate
b1；The remaining photoresist in quartz substrate b1 surface and protective layer are removed.
2.1.6, etch for six times, refer to Figure 18.
1) quartz substrate b1 is made positive photoresist b3；
2) carrying out being directed at photoetching development corrosion with mask plate b506, mask plate b506 includes seven annulus herein,
Photoresist exposure imaging region is more than dry etching region, on the one hand reduces the requirement of mask plate alignment precision,
On the other hand during etching, photoresist and chromium film work as etching barrier layer jointly, and etching precision is ensured by both, carve
During erosion, chromium film can compensate for positive photoresist photoetching development and is directed at the error caused；
3) quartz substrate b1 employing dry etching technology is carried out six etchings, after etching, take out quartz substrate
B1, removes remaining photoresist.
2.1.7, etch for seven times, see Figure 19, Figure 20, Figure 21.
1) quartz substrate b1 is made protective layer b4；
2) using back-exposure technology, chromium film b2 to serve as reticle, remaining protective layer need to protect front four steps to carve
The region lost；
3) make positive photoresist b3 on quartz substrate b1 surface, carry out photoetching development with mask plate b507 rotten
Erosion, exposes the region needing to carry out dry etching.Mask plate b507 includes an annulus, photoresist herein
Exposure imaging region is more than dry etching region, and principle is the same, because of the existence of sacrifice layer, is formed a kind of from right
Accurate mode, reduces the required precision in alignment procedures, the most well ensure that the precision of etching, etching
Precision is ensured by protective layer；
4) quartz substrate b1 surface chromium film b2 is removed；
5) quartz substrate b1 employing dry etching technology is carried out seven etchings, after etching, take out quartz substrate
b1；The remaining photoresist in quartz substrate b1 surface and protective layer are removed.
The present invention uses back-exposure technology, it is adaptable to the materials such as the quartz of saturating ultraviolet light.Above example is adopted
With barrier bed, relative to not using barrier bed, effect is more preferable.
Embodiment 3
The present invention provides a kind of method of ingenious making multi-step microlens array, is applied to 11 steps micro-
Lens array, only need to retain 11 steps and with the processing technology got out of a predicament or an embarrassing situation, more than 11 steps
Processing technology is removed.In particular embodiments, in once etching, mask plate 501a or 501b only includes
Five annulus；Secondarily etched middle mask plate 502a or 502b only includes two annulus；Mask in three etchings
Version 503a or 503b only includes three annulus；In four etchings, mask plate 504a or 504b only includes three
Annulus；In five etchings, mask plate 505a or 505b only includes an annulus；Mask plate 506a in six etchings
Or 506b only includes two annulus；In seven etchings, mask plate 507a or 507b only includes an annulus,
Other techniques are similar with embodiment 1.
It is presented above specific embodiment, but the present invention is not limited to described embodiment.
From the point of view of Zong Jieing, the basic scheme of the present invention is: first, produces initial deep in substrate at equal intervals
The step of degree；The most again on the interval on the step of each ID and between each step, carve
Erosion, forms the step of set depth.Then step to be produced is divided into several the most end to end groups,
In the most each group, each step is degree of depth continuous print；It is to say, first group and second group must be included.Strictly according to the facts
Execute example 1, embodiment 2, first, 16 steps (d1, d2, d3 ... d16) are divided into two resistances, often
Organizing 8 steps, d1-d8 is first group, and d9-d16 is second group.
Then to these several groups, synchronize to make, make each group to form one group of continuous step, each group
Corresponding step depth identical.Such as embodiment 1, synchronize to make, until state shown in Fig. 7.
Finally, then other group entirety etchings that will be not fully complete, until the step array required by being formed.Strictly according to the facts
Execute example 1, by overall for the second group of step (its degree of depth is identical with first group, for d1-d8) in Fig. 7 etching,
Form degree of depth d9-d16.
As other embodiments, if there is also the 3rd group of step, such as d17-d24, then need three groups of platforms
Rank all etch the step into the continuous degree of depth of d1-d8, then by second group of step entirety etching, to reach
D8-d16, then by the 3rd group of step entirety etching, to reach degree of depth d17-d24.Can also by second group,
The while of 3rd group, entirety etches into degree of depth d8-d16, and the 3rd group of step of the most overall etching reaches the degree of depth
d17-d24.It is to say, in this stage, once overall a group being not fully complete, overall quarter can be etched
The degree of depth of erosion is relevant to corresponding group of step depth；Every time overall can also etch all groups being not fully complete, entirety
Etching depth is identical.
Further, in the present invention, after being grouped, in each group, it is also possible to again carry out point
Group, then operates according to above-mentioned basic scheme.In embodiment 1, d1-d8 be grouped at this before 4
Individual step, rear four steps, then resynchronize operation, overall etching formation degree of depth d1-d8.
By embodiment 3 it can be seen that the numbers of steps that the solution of the present invention is respectively grouped is not necessary to identical.
The basic ideas of the present invention are above-mentioned basic scheme, for those of ordinary skill in the art, according to
The teachings of the present invention, designs the model of various deformation, formula, parameter are not required to spend creative work.
The change that without departing from the principles and spirit of the present invention embodiment carried out, revise, replace and
Modification still falls within protection scope of the present invention.
Claims (6)
1. the method efficiently making high accuracy multi-step microlens array, it is characterised in that first-class in substrate
The step of ID is produced at interval, then step array to be produced is divided into some groups, including first
Group, second group, first group is end to end with second group, and each step often organized is degree of depth continuous print；Synchronize system
Make each step of first group and second group, form two groups of steps that the corresponding degree of depth is identical；By whole for second group of step
The degree of depth that body etching is certain, forms degree of depth continuous print step array with first group of step；Described making multi-step
The method of microlens array is applicable to sacrifice layer production method；Barrier bed or do not use is used to block in operation
Layer；In manufacturing process, the stepped area etched is protected, unprotected region is performed etching；
In operation, use barrier bed or do not use barrier bed；Described sacrifice layer production method is: table on making layer
Face makes sacrifice layer, makes barrier bed at sacrifice layer upper surface, at barrier bed upper surface spin coating photoresist, uses
Mask plate blocks non-lithographic region, only expose the first patterned area, the 3rd patterned area, the 5th patterned area,
7th patterned area, the 9th patterned area, the 11st patterned area, the 13rd patterned area, the 15th light
Carve region, to described first patterned area, the 3rd patterned area, the 5th patterned area, the 7th patterned area,
9th patterned area, the 11st patterned area, the 13rd patterned area, the 15th patterned area are removed and are blocked
After layer and sacrifice layer, perform etching, it is thus achieved that have concordant the first table top, the 3rd quasi-table top, the 5th quasi-platform
Face, the 7th table top, the 9th table top, the tenth table top, the 13rd quasi-table top, the 15th quasi-table top surely
First semi-finished product；
Make photoresist at described first semi-finished product upper surface, block non-lithographic region with mask plate, only expose
3rd patterned area and neighboring region, the 7th patterned area and described 7th photoetching of described 3rd patterned area
The neighboring region in region, the 11st patterned area and the neighboring region and the tenth of described 11st patterned area
Five patterned area and the neighboring region of described 15th patterned area, remove the 3rd patterned area and the 3rd photoetching
Area adjacency region surface photoresist, the 7th patterned area and the neighboring region surface of described 7th patterned area
Photoresist, the photoresist on the neighboring region surface of the 11st patterned area and described 11st patterned area,
And the 15th photoresist on neighboring region surface of patterned area and described 15th patterned area, to the 3rd
Patterned area, the 7th patterned area, the 11st patterned area and the 15th patterned area perform etching, it is thus achieved that
Threeth table top lower than the first table top, the 7th quasi-table top, the tenth table top and the 15th quasi-table top surely, go
Fall remaining photoresist, it is thus achieved that the second semi-finished product；
Make protective layer at described second semi-finished product upper surface, peel off on the second semi-finished product remaining sacrifice layer and
Barrier bed, and except the first table top, the 3rd table top, the 5th quasi-table top, the 7th quasi-table top, the 9th quasi-table top,
Tenth table top, the 13rd quasi-table top and the protective layer of the 15th quasi-table top upper surface surely, is retaining First
Face, the 3rd table top, the 5th quasi-table top, the 7th quasi-table top, the 9th quasi-table top, the tenth surely table top, the tenth
Second semi-finished product upper surface of the protective layer of three quasi-table tops and the 15th quasi-table top upper surface makes sacrifice layer,
Sacrifice layer upper surface makes barrier bed, makes photoresist at barrier bed upper surface, blocks non-lithographic with mask plate
Region, only exposes the second patterned area and the second patterned area neighboring region, the 6th patterned area and the 6th light
Carve area adjacency region, the tenth patterned area and the tenth patterned area neighboring region and the 14th patterned area
With the 14th patterned area neighboring region, to described second patterned area, the 6th patterned area, the tenth photoetching
After region and the 14th patterned area remove barrier bed and sacrifice layer, perform etching, it is thus achieved that lower than the first table top
And second table top, sixth quasi-table top, tenth quasi-table top and the ten four quasi-table top higher than the 3rd table top, remove
Remaining protective layer, it is thus achieved that the 3rd semi-finished product；
Make photoresist at described 3rd semi-finished product upper surface, block non-lithographic region with mask plate, only expose
5th patterned area, the 6th patterned area, the 7th patterned area, the 13rd patterned area, the 14th photoetching
Region and the 15th patterned area, to described 5th patterned area, the 6th patterned area, the 7th patterned area,
13rd patterned area, the 14th patterned area and the 15th patterned area perform etching, it is thus achieved that reduce successively
The 5th table top, the 6th table top, the 7th table top, the 13rd quasi-table top, the 14th quasi-table top and the 15th accurate
4th semi-finished product of table top；
Make protective layer at described 4th semi-finished product upper surface, peel off on the 4th semi-finished product remaining sacrifice layer and
Barrier bed, and except the 4th table top, the protective layer of the 12nd table top upper surface, retain the second table top, the
Three table tops, the 5th table top, the 6th table top, the 7th table top, the 8th table top, the 9th table top, the tenth table top,
11st table top, the 13rd table top, the 14th table top, the 15th table top upper surface protective layer the 4th half
Finished product upper surface makes sacrifice layer, makes barrier bed at sacrifice layer upper surface, makes light at barrier bed upper surface
Photoresist, blocks non-lithographic region with mask plate, only exposes the 4th patterned area and the 4th patterned area adjacent area
Territory, the 12nd patterned area and the 12nd patterned area neighboring region, to described 4th patterned area, the tenth
After two patterned area remove barrier bed and sacrifice layer, perform etching, it is thus achieved that and ratio five lower than the 3rd table top
The 4th table top that face is high, the ten two quasi-table top lower and higher than the 13rd table top than the 11st table top, it is thus achieved that the
Five semi-finished product；
Make photoresist at described 5th semi-finished product upper surface, block non-lithographic region with mask plate, only expose
9th patterned area, the tenth patterned area, the 11st patterned area, the 12nd patterned area, the 13rd light
Carve region, the 14th patterned area and the 15th patterned area, to described 9th patterned area, the tenth photoetching
Region, the 11st patterned area, the 12nd patterned area, the 13rd patterned area, the 14th patterned area
Perform etching with the 15th patterned area, it is thus achieved that the 9th table top that reduces successively, the tenth table top, the 11st
Face, the 12nd table top, the 13rd table top, the 14th table top and the 6th semi-finished product of the 15th table top；
Make protective layer at described 6th semi-finished product upper surface, peel off on the 5th semi-finished product remaining sacrifice layer and
Barrier bed, and except the protective layer of the 9th table top upper surface, retain the first table top, second, third table top,
4th table top, the 5th table top, the 6th table top, the 7th table top, the 9th table top, the tenth table top, the 11st
Face, the 12nd table top, the 13rd table top, the 14th table top, the 15th table top upper surface protective layer
Six semi-finished product upper surfaces make photoresist, block non-lithographic region with mask plate, only expose the 8th patterned area
With the 8th patterned area neighboring region, the 8th patterned area is performed etching, it is thus achieved that and ratio lower than the 7th table top
The 8th table top that 9th table top is high, removes remaining protective layer, it is thus achieved that upper surface has 16 ladder table tops
Making layer.
Method the most according to claim 1, it is characterised in that described sacrifice layer uses polyimides
Or photoresist, described barrier bed uses chromium, and described protective layer uses silicon dioxide.
Method the most according to claim 1, it is characterised in that making layer is quartz, silicon, germanium.
4. the method efficiently making high accuracy multi-step microlens array, it is characterised in that first-class in substrate
The step of ID is produced at interval, then step array to be produced is divided into some groups, including first
Group, second group, first group is end to end with second group, and each step often organized is degree of depth continuous print；Synchronize system
Make each step of first group and second group, form two groups of steps that the corresponding degree of depth is identical；By whole for second group of step
The degree of depth that body etching is certain, forms degree of depth continuous print step array with first group of step；
The method of described making multi-step microlens array is applicable to back-exposure production method；Operation is adopted
With barrier bed or do not use barrier bed；
In manufacturing process, the stepped area etched is protected, unprotected region is performed etching；
In operation, use barrier bed or do not use the back-exposure mode described in barrier bed to be: in making layer upper surface system
Make barrier bed, at barrier bed upper surface spin coating positive photoresist, block non-lithographic region with mask plate, only dew
Go out the first patterned area, the 3rd patterned area, the 5th patterned area, the 7th patterned area, the 9th photoetching district
Territory, the 11st patterned area, the 13rd patterned area, the 15th patterned area, to described first photoetching district
Territory, the 3rd patterned area, the 5th patterned area, the 7th patterned area, the 9th patterned area, the 11st light
Carve region, after the 13rd patterned area, the 15th patterned area remove barrier bed, perform etching, it is thus achieved that gather around
Have concordant the first table top, the 3rd quasi-table top, the 5th quasi-table top, the 7th table top, the 9th table top, the tenth
Surely table top, the 13rd quasi-table top, the first semi-finished product of the 15th quasi-table top；
Make positive photoresist at described first semi-finished product upper surface, block non-lithographic region with mask plate, only
Expose the 3rd patterned area and the neighboring region of described 3rd patterned area, the 7th patterned area and the described 7th
The neighboring region of patterned area, the 11st patterned area and the neighboring region of described 11st patterned area and
15th patterned area and the neighboring region of described 15th patterned area, remove the 3rd patterned area and the 3rd
The positive photoresist on patterned area neighboring region surface, the 7th patterned area and the neighbour of described 7th patterned area
Connect the positive photoresist of region surface, the 11st patterned area and the neighboring region of described 11st patterned area
The positive photoresist on surface, and the 15th patterned area and the neighboring region table of described 15th patterned area
The positive photoresist in face, to the 3rd patterned area, the 7th patterned area, the 11st patterned area and the 15th
Patterned area performs etching, it is thus achieved that threeth table top lower than the first table top, the 7th quasi-table top, the tenth surely
Table top and the 15th quasi-table top, remove remaining positive photoresist, it is thus achieved that the second semi-finished product；
Described second semi-finished product upper surface make protective layer, by back-exposure development retain the first table top,
3rd table top, the 5th quasi-table top, the 7th quasi-table top, the 9th quasi-table top, the tenth table top, the 13rd accurate surely
Second semi-finished product upper surface of the protective layer of table top and the 15th quasi-table top upper surface makes positive photoresist, uses
Mask plate blocks non-lithographic region, only expose the second patterned area and the second patterned area neighboring region, the 6th
Patterned area and the 6th patterned area neighboring region, the tenth patterned area and the tenth patterned area neighboring region with
And the 14th patterned area and the 14th patterned area neighboring region, to the second patterned area, the 6th photoetching district
After territory, the tenth patterned area and the 14th patterned area remove barrier bed, perform etching, it is thus achieved that compare First
The second table top, the 6th quasi-table top, the tenth quasi-table top and the 14th quasi-table top that face is low and higher than the 3rd table top,
Remove remaining protective layer, it is thus achieved that the 3rd semi-finished product；
Make positive photoresist at described 3rd semi-finished product upper surface, block non-lithographic region with mask plate, only
Expose the 5th patterned area, the 6th patterned area, the 7th patterned area, the 13rd patterned area, the 14th
Patterned area and the 15th patterned area, to described 5th patterned area, the 6th patterned area, the 7th photoetching
Region, the 13rd patterned area, the 14th patterned area and the 15th patterned area perform etching, it is thus achieved that depend on
5th table top of secondary reduction, the 6th table top, the 7th table top, the 13rd quasi-table top, the 14th quasi-table top and
4th semi-finished product of 15 quasi-table tops；
Make protective layer at described 4th semi-finished product upper surface, be developed in reservation second by back-exposure
Face, the 3rd table top, the 5th table top, the 6th table top, the 7th table top, the 8th table top, the 9th table top, the tenth
Table top, the 11st table top, the 13rd table top, the 14th table top, the protective layer of the 15th table top upper surface
4th semi-finished product upper surface makes positive photoresist, blocks non-lithographic region with mask plate, only exposes the 4th light
Carve region and the 4th patterned area neighboring region, the 12nd patterned area and the 12nd patterned area adjacent area
Territory, after the 4th patterned area, the 12nd patterned area are removed barrier bed, performs etching, it is thus achieved that ratio the 3rd
The 4th table top that table top is low and higher than the 5th table top, tenth lower and higher than the 13rd table top than the 11st table top
Two quasi-table tops, it is thus achieved that the 5th semi-finished product；
Make positive photoresist at described 5th semi-finished product upper surface, block non-lithographic region with mask plate, only
Expose the 9th patterned area, the tenth patterned area, the 11st patterned area, the 12nd patterned area, the tenth
Three patterned area, the 14th patterned area, the 15th patterned area and the 16th patterned area, to described
Nine patterned area, the tenth patterned area, the 11st patterned area, the 12nd patterned area, the 13rd photoetching
Region, the 14th patterned area, the 15th patterned area and the 16th patterned area perform etching, it is thus achieved that depend on
9th table top of secondary reduction, the tenth table top, the 11st table top, the 12nd table top, the 13rd table top, the tenth
Four table top the 15th table top and the 6th semi-finished product of the 16th table top；
Make protective layer at described 6th semi-finished product upper surface, be developed in reservation First by back-exposure
Face, second, third table top, the 4th table top, the 5th table top, the 6th table top, the 7th table top, the 9th table top,
Tenth table top, the 11st table top, the 12nd table top, the 13rd table top, the 14th table top, the 15th table top,
6th semi-finished product upper surface of the protective layer of the 16th table top upper surface makes positive photoresist, hides with mask plate
Gear non-lithographic region, only exposes the 8th patterned area and the 8th patterned area neighboring region, to the 8th photoetching district
After barrier bed is removed in territory, perform etching, it is thus achieved that eightth table top lower and higher than the 9th table top than the 7th table top,
Remove protective layer and positive photoresist, it is thus achieved that upper surface has the making layer of 16 ladder table tops.
Method the most according to claim 4, it is characterised in that described protective layer uses negativity polyamides
Imines or negative photoresist, described barrier bed uses chromium.
Method the most according to claim 4, it is characterised in that described making layer is ultraviolet finish
The quartz of material.
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| CN111300163B (en) * | 2020-02-29 | 2021-03-02 | 湖南大学 | An ion beam polished large-area monolithic integrated Fabry-Pérot cavity color filter manufacturing method |
| CN111421390B (en) * | 2020-02-29 | 2021-10-12 | 湖南大学 | Ion beam polishing processing method for manufacturing micro-nano step array structure |
| CN114744065B (en) * | 2022-03-23 | 2024-06-14 | 中国电子科技集团公司第十一研究所 | Non-contact photoetching method for mesa structure chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002311220A (en) * | 2001-04-18 | 2002-10-23 | Alps Electric Co Ltd | Optical member and optical device which uses the same |
| CN1402047A (en) * | 2002-07-13 | 2003-03-12 | 华中科技大学 | Process for mfg. multi-phase diffraction optic element |
| JP2004341395A (en) * | 2003-05-19 | 2004-12-02 | Alps Electric Co Ltd | Optical element |
| CN1877372A (en) * | 2005-06-08 | 2006-12-13 | 冲电气工业株式会社 | Diffraction optical element and production method thereof |
| CN101885466A (en) * | 2010-06-13 | 2010-11-17 | 东南大学 | Method for manufacturing binary optical glass lens and packaging MEMS infrared detector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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-
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002311220A (en) * | 2001-04-18 | 2002-10-23 | Alps Electric Co Ltd | Optical member and optical device which uses the same |
| CN1402047A (en) * | 2002-07-13 | 2003-03-12 | 华中科技大学 | Process for mfg. multi-phase diffraction optic element |
| JP2004341395A (en) * | 2003-05-19 | 2004-12-02 | Alps Electric Co Ltd | Optical element |
| CN1877372A (en) * | 2005-06-08 | 2006-12-13 | 冲电气工业株式会社 | Diffraction optical element and production method thereof |
| CN101885466A (en) * | 2010-06-13 | 2010-11-17 | 东南大学 | Method for manufacturing binary optical glass lens and packaging MEMS infrared detector |
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