CN103293877B - Photolithography device and light-transmitting unit adopting quadrupole exposure mode and photolithography method - Google Patents
Photolithography device and light-transmitting unit adopting quadrupole exposure mode and photolithography method Download PDFInfo
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- CN103293877B CN103293877B CN201310211951.9A CN201310211951A CN103293877B CN 103293877 B CN103293877 B CN 103293877B CN 201310211951 A CN201310211951 A CN 201310211951A CN 103293877 B CN103293877 B CN 103293877B
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000000206 photolithography Methods 0.000 title abstract 10
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
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- 230000008569 process Effects 0.000 abstract description 20
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- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 2
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Abstract
The invention relates to a photolithography device and light-transmitting unit adopting quadrupole exposure mode and a photolithography method. The photolithography device comprises a photosource, a light-transmitting unit, a condensing lens, a photomask and a projecting lens, which are arranged from top to bottom in sequence, wherein the light-transmitting unit is at least provided with a group of quadrupole light holes; at least one light hole in the light-transmitting unit contains a plurality of gray areas; the gray difference of the plurality of gray areas is transitional difference or saltatory difference; the condensing lens gathers the photosource ray; and the diffracted light is focused on a silicon substrate below the projecting lens via the photomask with diffraction function and the projecting lens. By adopting the photolithography device, the light-transmitting unit and the photolithography method, the synthetic resolutions and process windows of photolithography patterns in different dimensions are obviously improved, in particular, the linewidth dimensions of the photolithography patterns in different dimensions are balanced under the condition that the photolithography patterns are arranged in the XY vertical direction, and simultaneously process cost increase and output reduction caused by multiple exposure are avoided.
Description
Technical field
The present invention relates to semiconductor microelectronics manufacturing equipment field, particularly relate to the lithographic equipment of a kind of employing four pole Exposure modes, logical light unit and photoetching method.
Background technology
Semiconductor devices makes and usually adopts photolithographic exposure mode to form required figure, and its basic step is as follows: first, resist coating on silicon chip, subsequently, high light is carved with the mask plate of circuit pattern by one piece, irradiates on a silicon substrate, and the photoresist being irradiated to part occurs rotten, use corrosive liquids cleaning silicon chip afterwards, remove rotten photoresist, inscribe on a silicon substrate and photomask same circuits patterned photo glue pattern, finally, through curing and the operation such as development, form product wafer.
In the process of whole photolithographic exposure, the performance of lithographic equipment directly has influence on the yield rate of wafer.Refer to Fig. 1 and Fig. 2, Fig. 1 is off-axis (Off-Axis) the lithographic exposure systems schematic diagram adopting the extremely logical light Exposure mode of tradition four, and Fig. 2 is the vertical view of four extremely logical light unit 12 shown in Fig. 1.As shown in the figure, incident ray 11 necessarily departs from by four extremely logical light unit 12 and collector lenses 13 along with axis, and form diffraction at photomask 14 figure place, 0 grade forms component graphics at silicon substrate 16 Surface Interference with+1 order diffraction light after projecting lens 15.Wherein, coefficient of coherence σ is the important parameter describing circular iris size, and it represents the degree that projecting lens is occupied by light source, the aperture of the aperture/projecting lens of σ=collector lens, coefficient of coherence σ
inand σ
out, opening angle α and relative direction angle β is the important parameter of description four pole light hole size and width, σ
into σ
outdistance is light hole width, and α determines light hole size, and relative direction angle β determines light hole arrangement.
Four pole exposures are particular example for off-axis exposure, compare general off-axis exposure, the figure of little feature sizes has larger contrast, higher resolution and better process tolerance.But the progress continued along with manufacturing process, simple four poles exposure gradually can not meet technology to resolution requirements, and can not ensure that the figure of different size has enough resolution, cause a part of figure to be rasterized, formed and so-calledly forbid spatial separation (Forbidden Pitch) region.Refer to Fig. 3, Fig. 3 be four extremely logical light cell size on the impact of different spaces pitch pat feature sizes, wherein, more close to zero, finished product accuracy is higher, and technology is more advanced for critical size (Critical Dimension is called for short CD).As shown in the figure, the curve shown in figure is about 150nm in spatial separation, and depart from zero point comparatively greatly, critical dimension errors is maximum, causes some or several interval video picture difficulty.
Refer to Fig. 4, Fig. 4 is a kind of existing improvement opportunity schematic diagram, and it adopts two method of photolithographic exposure to four pole light holes axisymmetric along light transmitting cells center.The method effectively reduces the fluctuation of feature sizes in larger space pitch area by two to four pole light holes of inside and outside arrangement, reduces the risk being formed and forbid spatial separation region.
But above-mentioned two still lack dirigibility to four pole light holes in the feature sizes of the various figure of balance and process window, be difficult to reach optimised process balance to the figure of different size.In sum, how to reach the feature sizes of various figure and the optimised process balance of process window, not only need four pole light holes of suitable dimension, and the exposure that the feature sizes of needs and various figure matches.This is the required target pursued of current industry.
Summary of the invention
Fundamental purpose of the present invention is the defect overcoming prior art, by comprising four pole light holes illumination gray differences balance exposures of many gray scales combination, making four pole light holes illuminations play best resolution and strengthening and the multi-functional such as process window balance.
For reaching above-mentioned purpose, technical scheme of the present invention is as follows:
Adopt the lithographic equipments of four pole Exposure modes, comprising: light source, at least have the four extremely logical light unit in pair of light-transmissive hole, collector lens, photomask and projecting lens, arrange from top to bottom successively.Wherein, comprise multiple gray area at least one light hole in above-mentioned logical light unit, diffraction light to focus on be positioned on the silicon substrate of its underpart by having the photomask of diffraction function, projecting lens by collector lens focus source light.
Preferably, described four extremely logical light unit iuuminting holes are one group, and its shape is partial circle type section, fan-shaped, circular, oval, one of polygon or their combination, and arranges with described logical light unit center rotational symmetry.
Preferably, the quantity comprising gray area in the light hole of four extremely logical light unit is the region of two or more different gray scales, and the gray difference of multiple gray area is transition type difference, or is great-jump-forward difference.
Preferably, the gray area shape in light hole is strip, circle, one of ring-type or their combination.
Preferably, the gray area in light hole is along logical light unit center rotational symmetry arrangement.
Preferably, when light hole is circular or oval, when gray area is circular, annular or oval, the gray area in light hole is coaxial with light hole.
Preferably, the outer perimeter section coefficient of coherence σ of light hole in described four extremely logical light unit
outscope be 0.7 ~ 0.9; Inner round portion coefficient of coherence σ
inscope be 0.3 ~ 0.5.
Preferably, the scope of the opening angle α in described four extremely logical light unit iuuminting holes is 15 ° ~ 50 °.
Preferably, described source light wavelength is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
For reaching above-mentioned purpose, the invention provides a kind of device, technical scheme is as follows:
A kind of logical light unit with four pole light holes; Logical light unit at least has one group along the logical axisymmetric four pole light holes of light unit center; At least one light hole comprises multiple gray area.
Preferably, the quantity comprising gray area in four pole light holes is the region of two or more different gray scales, and the gray difference of described multiple gray area is transition type difference, or is great-jump-forward difference.
For reaching above-mentioned purpose, the present invention also provides a kind of photoetching method, specifically comprises the steps:
Step S1: according to litho pattern arrangement demand, choose the group number of four pole light holes, and determine the outer perimeter section coefficient of coherence σ of four pole light holes
out, inner round portion coefficient of coherence σ
inwith opening angle α, relative direction angle β and light hole shape and orientation;
Step S2: choose gray areas quantity and arrangement combination in light hole, to adjust incident ray exposure according to litho pattern size arrangement demand;
Step S3: incident ray, by after four extremely logical light unit and collector lens, forms diffracted ray through photomask diffraction;
Step S4: form final required litho pattern in the photoresist of diffracted ray again after projecting lens in surface of silicon;
Step S5: silicon substrate is cured and develops.
As can be seen from technique scheme, the lithographic equipment of employing four pole provided by the invention Exposure mode, it has four extremely logical light unit of variable many gray scales by installing additional, exposure matching problem is made up with many gray features, balance the exposure of the feature sizes of various figure, and there is the dirigibility of process window aspect, just can meet at single exposure and carry out in photoetching process, reaching optimised process balance to variable feature sizes (namely there are the various figures in different size and direction), thus the manufacturing cost avoided owing to adopting method for multiple exposures with multiple to cause increases and produces production declining.
Accompanying drawing explanation
Fig. 1 is the off-axis lithographic exposure systems schematic diagram adopting four pole Exposure modes in prior art
Fig. 2 is for adopting the logical light unit schematic top plan view of the off-axis lithographic exposure systems of four pole Exposure modes in prior art shown in Fig. 1
Fig. 3 is the influence curve of Dan Zusi pole exposure to the photolithographic process capability of different spaces pitch pat feature sizes adopted in system shown in Figure 1
Fig. 4 is the logical light unit schematic top plan view that in prior art, the off-axis lithographic exposure systems of the axisymmetric four pole light holes of light unit center is led in employing two to edge
Fig. 5 is the schematic diagram that the present invention has lithographic equipment one preferred embodiment of four pole Exposure modes
Fig. 6,7 to have the logical light unit schematic top plan view in the lithographic equipment embodiment of four pole Exposure modes for the present invention
Fig. 8 is the schematic top plan view that the present invention has logical light unit in lithographic equipment one preferred embodiment of four pole Exposure modes
Fig. 9 adopts in the embodiment of the present invention to have many gray scale four poles Exposure mode to the influence curve of the photolithographic process capability of different spaces pitch pat feature sizes
Figure 10 is the schematic flow sheet of photoetching method one specific embodiment of the present invention
Embodiment
Some exemplary embodiments embodying feature & benefits of the present invention describe in detail in the explanation of back segment.Be understood that the present invention can have various changes in different examples, it neither departs from the scope of the present invention, and explanation wherein and being shown in essence when the use explained, and be not used to limit the present invention.
Above-mentioned and other technical characteristic and beneficial effect, by conjunction with the embodiments and accompanying drawing 5-9 be that the structure of the off-axis lithographic exposure systems of lighting system and photoetching method are described in detail to four pole light holes of the present invention.
It should be noted that, the light source adopted in the lithographic equipment of the employing four pole Exposure mode in the embodiment of the present invention can be arranged on any position of light path system, as long as it is just passable to meet off-axis photoetching exposure device needs, this source light wavelength does not do any restriction, preferably, can be 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
Refer to Fig. 5, Fig. 5 is the schematic diagram of off-axis light engraving device one preferred embodiment of the present invention four pole Exposure mode.As shown in the figure, this off-axis light engraving device comprises the logical light unit 52 with four pole light holes, the projecting lens 55 being positioned at collector lens 53 under logical light unit 52, being positioned at the photomask 54 under collector lens 53 and being positioned under photomask 54.Collector lens 53 is for assembling the source light 51 through light hole in described logical light unit 52, and photomask 54 is for the light of diffraction through collector lens 53, and projecting lens is used for the diffraction light through photomask to focus on the silicon substrate 56 being positioned at its underpart.
That is, incident ray 51 necessarily departs from by four extremely logical light unit 52 and collector lenses 53 along with axis, and form diffraction at photomask 54 figure place, 0 grade forms component graphics at silicon substrate 56 Surface Interference with+1 order diffraction light after projecting lens 55.
Under normal circumstances, the light hole in four extremely logical light unit 52 can be arranged situation according to litho pattern, selects one group, also can be chosen as rent more.Many groups light hole can be axisymmetric along logical light unit center, also can be asymmetrical.In an embodiment of the present invention, comprise multiple gray area at least one light hole in four extremely logical light unit 52, the gray difference of the plurality of gray area is transition type difference, or is great-jump-forward difference.Wherein, the cross sectional shape of light hole is partial circle type section, fan-shaped, circular, oval, one of polygon or their combination; Preferably, light hole is along the central shaft symmetry arrangement of logical light unit 52.Preferably, light hole relative direction angle β is 90 °.
Refer to Fig. 6, Fig. 6 is the schematic top plan view under the present invention adopts in the lithographic equipment embodiment of four pole exposure systems one group of light hole situation.As shown in the figure, if light hole is one group, so, at least one light hole, multiple gray area can be comprised, and the gray area shape being positioned at light hole can have any shape, such as bar shaped, circular, one of ring-type or their combination.Preferably, if gray area is made up of many gray areas arranged in parallel, many gray areas arranged in parallel at the two poles of the earth can also along logical light unit center rotational symmetry, as light hole 61 and 63.Light hole arrangement of its four pole can be XY vertical direction, as shown in Figure 6, but also other any directions.If gray area is made up of multiple annular or circle, the gray area in this light hole can be coaxial with light hole, as light hole 64.
Refer to Fig. 7, Fig. 7 is the schematic top plan view under the present invention has in the lithographic equipment embodiment of four pole Exposure modes one group of light hole situation.The present embodiment feature is that its four pole distribution relative direction angle β is not 90 °, makes it have in specific one direction, can be X-direction, Y-direction or any direction, have reinforcement exposure effect.In the application of reality, the outer ring coefficient of coherence 0.7 ~ 0.9 of light hole and inner ring coefficient of coherence 0.3 ~ 0.5 can meet most of litho pattern demand, certainly, in extreme circumstances, and σ
incan be set to zero, namely becoming four pole photolithographic exposures on axle from off-axis four pole photolithographic exposure, is also operable.In theory, the opening angle α of four pole light holes can be 0 ° to 90 °, but in actual applications, opening angle α is 15 ° to 50 ° is common example.
If four extremely logical light unit 52 comprise organize light hole, gray area can be set in one group of light hole wherein as required more, also gray area can be set often organizing in light hole.Often organizing the gray area number of light hole, shape and arrangement mode etc. can identical with above-mentioned one group of light hole embodiment, does not repeat them here.
Particularly, refer to Fig. 8, Fig. 8 is the schematic top plan view that the present invention adopts logical light unit (comprising two group of four pole light hole) in lithographic equipment one preferred embodiment of four pole Exposure modes.As shown in the figure, four extremely logical light unit 52 comprise two groups of light holes (light hole group 81 and light hole group 82).Wherein, light hole group 81 comprises the from inside to outside gray area that increases progressively of continuous gray scale, light hole group 82 comprise four with the grayscale bar (grayscale bar 821 of logical light unit center symmetry, grayscale bar 822, grayscale bar 823 and grayscale bar 824), grayscale bar 821 to be gray-scale values be 0.3 grayscale bar, grayscale bar 822 to be gray-scale values be 1.0 grayscale bar and alternatively non-transparent bar, grayscale bar 823 is gray-scale values is the grayscale bar of 0 and complete light transmission strip, and grayscale bar 824 is grayscale bar of gray-scale value 0.6.
Refer to Fig. 9, Fig. 9 adopts the impact in the embodiment of the present invention with the photolithographic process capability on different spaces pitch pat feature sizes of many gray scale four poles Exposure mode.Curve as can be seen from figure, it is less that the curve shown in figure departs from zero point in spatial separation, and critical dimension errors is much smaller compared with the curve shown in Fig. 3, which ensure that the specific region video picture of some or several intervals is normal.
In an embodiment of the present invention, lithographic equipment has four extremely logical light unit of variable many gray scales by installing additional, exposure matching problem is made up with many gray features, balance the exposure of the feature sizes of various figure, and there is the dirigibility of process window aspect, just can meet at single exposure and carry out reaching optimised process balance in photoetching process to variable feature sizes (namely having the various figures in different size and direction), the exposure of many gray scale four poles can provide the exposure matched with the feature sizes of various figure.
It should be noted that, the present invention has the logical light unit in the lithographic equipment of four pole Exposure modes, can with the locus of the parts such as the lens in lithographic equipment, can change, its replacement scheme includes in the scope of the embodiment of the present invention.
Below by Figure 10, the technique that the lithographic equipment adopting the present invention to have four pole Exposure modes carries out photoetching is described in detail.Refer to Figure 10, Figure 10 is the process chart of photoetching method one specific embodiment of the present invention, and above-mentioned photoetching process can comprise the steps:
Step S1: according to litho pattern arrangement demand, choose the group number of four pole light holes, determine the outer perimeter section coefficient of coherence σ of four pole light holes
outwith inner round portion coefficient of coherence σ
in, opening angle α, relative direction angle β, light hole shape and orientation; Wherein, in this step, can carry out needing to carry out initial option to the arrangement of aperture light transmission according to photolithographic exposure.
Step S2: choose gray areas quantity and arrangement combination in light hole according to litho pattern size arrangement demand, and adjustment incident ray exposure; Wherein, in this step, according to the some or several specific region in litho pattern, gray areas quantity and arrangement combination in four pole light holes can be determined, namely photolithographic exposure is needed to the region of lay special stress on or compensation, carry out the fine setting to incident ray exposure.
Step S3: incident ray, by after logical light unit and collector lens, forms diffracted ray through photomask diffraction;
Step S4: form final required litho pattern in the photoresist of diffracted ray again after projecting lens in surface of silicon;
Step S5: silicon substrate is cured and develops.
Wherein, in step S2, incident ray can be positioned at direct projection directly over silicon substrate, also can be positioned at other positions, direct projection, reflection or refraction.Further, in actual applications, the source light wavelength of litho machine is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
Above-describedly be only embodiments of the invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization instructions of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. adopt a lithographic equipment for four pole Exposure modes, form required figure on a silicon substrate by photolithographic exposure mode, comprising:
Light source;
At least there is the logical light unit of one group of four pole light hole;
Collector lens, is positioned under described logical light unit, for assembling the source light through light hole described in described logical light unit;
Photomask, is positioned under described collector lens, for the light of diffraction through described collector lens;
Projecting lens, is positioned under described photomask, for the diffraction light through described photomask is focused on the described silicon substrate being positioned at its underpart;
It is characterized in that, multiple gray area is at least comprised at least one light hole in described logical light unit, the gray difference of described multiple gray area is transition type difference, or be great-jump-forward difference, to choose in described light hole gray areas quantity and arrangement combination according to litho pattern size arrangement demand on described silicon substrate, thus adjust described light source and be incident to light exposure amount on described silicon substrate through described logical light unit, collector lens, photomask and projecting lens.
2. lithographic equipment as claimed in claim 1, it is characterized in that, the shape of described light hole is partial circle type section, fan-shaped, circular, oval, one of polygon or their combination, and arranges with described logical light unit center rotational symmetry.
3. lithographic equipment as claimed in claim 1 or 2, it is characterized in that, the gray area shape in described light hole is strip, circle, one of ring-type or their combination.
4. lithographic equipment as claimed in claim 3, is characterized in that, the gray area in described light hole is along described logical light unit center rotational symmetry arrangement.
5. lithographic equipment as claimed in claim 1, is characterized in that, described light hole is circular or oval, described gray area circle, annular or oval, and the gray area in described light hole is coaxial with described light hole.
6. lithographic equipment as claimed in claim 1, is characterized in that, the outer perimeter section coefficient of coherence σ of described light hole
outscope be 0.7 ~ 0.9; The inner round portion coefficient of coherence σ of described light hole
inscope be 0.3 ~ 0.5.
7. lithographic equipment as claimed in claim 1, it is characterized in that, the scope of the opening angle α of described light hole is 15 ° ~ 50 °.
8. lithographic equipment as claimed in claim 1, it is characterized in that, described source light wavelength is 436 nanometers, 365 nanometers, 248 nanometers or 193 nanometers.
9. adopt a logical light unit for four pole Exposure mode four poles, it is characterized in that, in described four extremely logical light unit, at least there is one group along the logical axisymmetric four pole light holes of light unit center; At least one light hole described at least comprises multiple gray area; The gray difference of described multiple gray area is transition type difference, or is great-jump-forward difference.
10. adopt a photoetching method for device described in claim 1, it is characterized in that, specifically comprise the steps:
Step S1: according to litho pattern arrangement demand, choose the group number of described four pole light holes, and determine orientation, the outer perimeter section coefficient of coherence σ of described light hole
out, inner round portion coefficient of coherence σ
inopening angle α, relative direction angle β and light hole shape;
Step S2: choose gray areas quantity and arrangement combination in described light hole, to adjust described incident ray exposure according to litho pattern size arrangement demand;
Step S3: described incident ray, by after described logical light unit and described collector lens, forms diffracted ray through described photomask diffraction;
Step S4: form final required litho pattern in the photoresist of described diffracted ray again after described projecting lens in surface of silicon;
Step S5: described silicon substrate is cured and develops.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5508803A (en) * | 1994-12-20 | 1996-04-16 | International Business Machines Corporation | Method and apparatus for monitoring lithographic exposure |
| CN1080896C (en) * | 1994-02-09 | 2002-03-13 | 米克鲁尼蒂系统工程公司 | Masks for lithographic patterning using off-axis illumination |
| CN100380233C (en) * | 2001-11-28 | 2008-04-09 | Asml蒙片工具有限公司 | Method for raising processing range with eliminating auxiliary characteristic |
| CN101636695A (en) * | 2007-01-30 | 2010-01-27 | 卡尔蔡司Smt股份公司 | The illuminator of microlithographic projection exposure apparatus |
| CN101685261A (en) * | 2008-09-23 | 2010-03-31 | 力晶半导体股份有限公司 | Off-axis light source, light shielding plate and method for defining different patterns by single exposure |
-
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- 2013-05-31 CN CN201310211951.9A patent/CN103293877B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1080896C (en) * | 1994-02-09 | 2002-03-13 | 米克鲁尼蒂系统工程公司 | Masks for lithographic patterning using off-axis illumination |
| US5508803A (en) * | 1994-12-20 | 1996-04-16 | International Business Machines Corporation | Method and apparatus for monitoring lithographic exposure |
| CN100380233C (en) * | 2001-11-28 | 2008-04-09 | Asml蒙片工具有限公司 | Method for raising processing range with eliminating auxiliary characteristic |
| CN101636695A (en) * | 2007-01-30 | 2010-01-27 | 卡尔蔡司Smt股份公司 | The illuminator of microlithographic projection exposure apparatus |
| CN101685261A (en) * | 2008-09-23 | 2010-03-31 | 力晶半导体股份有限公司 | Off-axis light source, light shielding plate and method for defining different patterns by single exposure |
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