CN104237984B - The manufacture method of multi-step microlens array in high precision - Google Patents
The manufacture method of multi-step microlens array in high precision Download PDFInfo
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Abstract
The present invention relates to the manufacture method of a kind of high accuracy multi-step microlens array, first the method produces the step of ID in substrate at equal intervals；The most again on the interval on the step of each ID and between each step, perform etching, form the step of set depth, this method is not only relatively low with the making required precision of operation equipment to operator, yield rate is higher, and substantial amounts of etch period can be saved, there is bigger economic benefit.
Description
Technical field
The present invention relates to the manufacture method of a kind of multi-step microlens array, belong to photoelectric device process for making and micro-optic skill
Art field.
Background technology
Microlens array be a series of a diameter of millimeter, micron dimension microminiature lens by the array necessarily rearranged.Micro-
Lenticule manufactured by optical technology and microlens array are little, lightweight with its volume, it is excellent to be easy to integrated, array etc.
Point, it has also become new scientific research development direction.
Along with the fast development of modern information technologies, lenticule is increasingly extensive, at photocopier, image in the application of every field
In scanning device, facsimile machine, photographing unit and medical sanitary apparatus.Utilize lenticule can converge light, improve filling out of device
The empty factor, the optics cross-talk, the fill factor, curve factor that solve to occur due to constantly reducing of planar array detector pixel dimension requirement are the highest
And degradation problem under detectivity.
Diffraction microlens, according to Fresnel zone plate principle design, makes circular step, during each circular step with optical axis is
The heart, each annulus is equivalent to an independent plane of refraction, and these circular band all can make incident ray converge to same Jiao
Point. number of steps is the most, and its diffraction efficiency is the highest.Microlens array is frequently with the manufacture method of chemical wet etching.From binary optical
Since proposition, alignment law technology is particularly suitable for the making of diffraction microlens array, and the most lenticular border is easily able to whole
Neat and sharp-pointed, activity coefficient up to 100%, and lightweight, cost is low, be prone to miniaturization, array.
Technical scheme is by first making lenticule even number annulus figure, then with peeling off sacrifice layer method or the back side
Exposure method obtains mask protection layer and is protected by finished product even loop strip substrate figure, finally makes lenticule odd number annulus figure.
The method is applicable not only to the materials such as the quartz of ultraviolet light, and is applicable to impermeable ultraviolet light but matching is higher, low cost
Silicon, the material such as germanium, practical.
This method is not only relatively low with the making required precision of operation equipment to operator, and yield rate is higher, and can save
Remove substantial amounts of etch period, there is bigger economic benefit.
Summary of the invention
It is an object of the invention to provide a kind of new method that can make high accuracy microlens array, in order to solve existing side
Method makes, to operator and operation equipment, the problem that required precision is high, yield rate is relatively low, is greatly saved all of etching simultaneously
The time on rank.
For achieving the above object, the solution of the present invention includes:
The manufacture method of a kind of multi-step microlens array, first produces the step of ID in substrate at equal intervals；So
After again on interval on the step of each ID and between each step, perform etching, form the step of set depth.
All steps to be produced are divided into two or more groups；Arrange at equal intervals between each step of each group；
Make successively by group, make all steps of first group, make all steps of second group, the like；Often organizing step
Manufacturing process in, all steps being not fully complete of every subsynchronous etching；In one group of step, each step is from starting to complete
The etching number of times of experience is equal with its sequence number in this group step.
Lenticular all step depth are d1, d2, d3 ..., dn；The step of the method is as follows:
1), substrate is produced spaced first group of step:
A), etch the setting of a series of intervals in substrate, the degree of depth is the step of d1；
B), protection reaches the step that set depth is d1, etches remaining step further, and forming the degree of depth is d3
Step；
C), protection reaches the step that set depth is d3, etches remaining step further, the like, until
Etch first group of all of step d1, d3, d5 ..., dn；
2), between first group of step, second group of step is produced:
D), the first group of step etched is protected；The step that a series of degree of depth is d2 is etched between first group of step；
E), protection reaches the step that set depth is d2, etches remaining step further, and forming the degree of depth is d4's
Step；
G), protection reaches the step that set depth is d4, etches remaining step further, the like, until
Etch first group of all of step d2, d4, d6 ..., dn-1.
In substrate, etch that a series of interval is arranged, the degree of depth is that the method for step of d1 is described in step a): first exist
Make sacrifice layer, spin coating photoresist on sacrifice layer in substrate, utilize corresponding mask to carry out photoetching, develop and corrode,
Then etching sacrificial layer and substrate.
The method of first group of step that the protection described in step d) has etched is: at least make on the first group of step etched
Mask protection layer, then peels off sacrifice layer.
Described sacrifice layer not transmission ultraviolet light, the method for first group of step that the protection described in step d) has etched is: at least exist
Coat negative photoresist on the first group of step etched, be exposed at backside of substrate, develop, then corrode, and
Erode sacrifice layer.
The material of described substrate is quartz, silicon or germanium.
Described sacrifice layer is negative photoresist or negative polyimide.
Described sacrifice layer is chromium or silicon dioxide.
First, the present invention is to solve the problem that existing method is high to operator and operation equipment making required precision, propose one
Plant thinking, when making, in substrate, first produce the step of ID at equal intervals；The most again according to technological process,
On interval on the step of each ID and between each step, perform etching, form the step of set depth.System
The methods made are numerous, and its key point is first to produce at equal intervals in substrate the step of ID, has
The step of ID, it becomes possible to step to be produced is positioned, make making precision be not directed at by follow-up mask,
The impact of error in the operation such as photoetching, etching, and reduce mask, the required precision of the technique such as photoetching, etching.
Further, present invention also offers a kind of thinking: when making multi-step array, first packet is carried out, and gives
Go out the mode of a kind of packet: in each group, equally spaced setting between each step；Make the most again and often organize step, often
The manufacturing process of group step is identical；In one group of step manufacturing process, often etching a step simultaneously, all remaining is being not fully complete
Step carry out the etching of same depth, this is that the etching of step next time saves the time.It is to say, etched all
The time of step is actually the time etching the deepest one-level step, and the present invention provides the manufacture method of multi-step microlens array
Save the substantial amounts of time.
The manufacturing process of the multi-step microlens array that the present invention provides is: first make sacrifice layer, by a mask lithography shape
Become semi-finished product microlens array annulus base patterns, then through repeatedly mask lithography, etching forms finished product microlens array annulus base
Base map shape, then makes mask layer, utilizes and peels off sacrifice layer method or back exposed method formation mask protection layer by finished product
Microlens array annulus base patterns is protected, and finally in the annulus substrate etched, is formed into through repeatedly mask lithography etching
Product microlens array annulus base patterns.
The method is applicable not only to the materials such as the quartz of ultraviolet light, and is applicable to impermeable ultraviolet light but matching is higher, become
The materials such as this low silicon, germanium, practical.It addition, the precision of microlens array of the present invention is by the essence of first time mask lithography
Degree determines, fundamentally avoids conventional sleeve carving method and makes microlens array making because of mask alignment, photoetching, etching etc.
The inevitable cumulative error brought in operation, reduces difficulty, meets high accuracy in microlens array manufacturing process and wants
Ask, effectively ensure and improve the optical properties such as microlens array diffraction benefit, the most also for making other any multiple stage of making
Rank and degree of depth high-precision optical element provide approach.This method to operator and operation equipment making required precision relatively
Low, yield rate is higher, has bigger economic benefit.
Accompanying drawing explanation
Fig. 1 is the flow chart making first group of step in embodiment 1；
Fig. 2 is the flow chart making second group of step in embodiment 1；
Fig. 3 is the process schematic being etched second depth step in embodiment 2 by mask lithography for the first time in substrate；
Fig. 4 is the process schematic being etched the 4th depth step in embodiment 2 by second time mask lithography in substrate；
Fig. 5 is the process schematic making mask protection layer in embodiment 2；
Fig. 6 is the process schematic peeling off sacrifice layer in embodiment 2；
Fig. 7 is the process schematic being etched the 3rd depth step in embodiment 2 by mask lithography in substrate；
Fig. 8 is use 4 lenticular process schematic of step of back-exposure fabrication techniques in embodiment 3.
In figure, 1 is substrate, and 2 be sacrifice layer, and 3 is positive photoresist, and 401 is the mask of first time mask lithography, and 402 is the
The mask of secondary mask lithography, 403 is the mask of third time mask lithography, and 5 is mask protection layer, and 6 is barrier bed.
Detailed description of the invention
The basic scheme of the inventive method is:
The manufacture method of a kind of multi-step microlens array, lenticular all step depth are d1, d2, d3 ..., dn；
The step of the method is as follows:
1), producing spaced first group of step in substrate, step is:
A), etch the setting of a series of intervals in substrate, the degree of depth is the step of d1；
B), protection reaches the step that set depth is d1, etches remaining step further, and forming the degree of depth is d3
Step；
C), protection reaches the step that set depth is d3, etches remaining step further, the like, until
Etch first group of all of step d1, d3, d5 ..., dn；
2), between first group of step, second group of step is produced；Step is:
D), the first group of step etched is protected；The step that a series of degree of depth is d2 is etched between first group of step；
E), protection reaches the step that set depth is d2, etches remaining step further, and forming the degree of depth is d4's
Step；
G), protection reaches the step that set depth is d4, etches remaining step further, the like, until
Etch first group of all of step d2, d4, d6 ..., dn-1.
Concrete, the present patent application provides a kind of 10 lenticular methods of step of making at Fig. 1, Fig. 2, and lenticule etches
The all step depth gone out are d1, d2, d3 ..., d9, and original depth is d0, according to above-mentioned basic scheme:
1), producing spaced first group of step in substrate, step is:
A), etch the setting of a series of intervals in substrate, the degree of depth is the step of d1；
B), protection reaches the step that set depth is d1, etches remaining step further, and forming the degree of depth is d3
Step；
C), protection reaches the step that set depth is d3, etches remaining step further, and forming the degree of depth is d3's
Step, protection depth is the step of d3, continue etch remaining step, the like, until etch first group all of
Step d1, d3, d5, d7, d9；
2), between first group of step, second group of step is produced；Step is:
D), the first group of step etched is protected；The step that a series of degree of depth is d2 is etched between first group of step；
E), protection reaches the step that set depth is d2, etches remaining step further, and forming the degree of depth is d4's
Step；
G), protection reaches the step that set depth is d4, etches remaining step further, the like, until
Etch second group of all of step d2, d4, d6, d8；So far, lenticular ten step d1, d2, d3 ...,
D9 has etched, and original depth is d0.
Use mask to be exposed, corrode and develop about photoresist layer, and relate to the concrete technology of etching, real below
Execute example specifically to introduce.In order to simplify process, as a example by 4 steps, as shown in Fig. 3 to Fig. 7:
Embodiment 2
Fig. 3 to Fig. 5 be make four step microlens arrays method, lenticular all step depth are d0, d1, d2,
d3；Specifically comprise the following steps that
1), producing spaced first group of step in substrate, step is:
A), substrate makes sacrifice layer and positive photoresist layer, by using mask to carry out photoetching and development, then etch
Going out two interval settings, the degree of depth is the step of d1；This step as it is shown on figure 3, wherein sacrifice layer be negative photo glue-line, base
The end can be the materials such as the quartz material of ultraviolet light, or the silicon of impermeable ultraviolet light, germanium；
B), spin coating positive photoresist again, use corresponding mask to carry out photoetching and development, protection reaches the platform of set depth
Rank d1, etches further to remaining step, forms the step that the degree of depth is d3；This step is as shown in Figure 4；
2), between first group of step, second group of step is produced；Step is:
C), on the first group of step etched, at least make mask protection layer, then peel off sacrifice layer；Spin coating light in substrate
Photoresist, uses corresponding mask to carry out photoetching and development, etches the platform that a series of degree of depth is d2 between first group of step
Rank, so far produce the microlens array of 4 steps；Wherein mask protection layer is chromium or silicon dioxide.This step such as Fig. 5-
Shown in Fig. 7.
Embodiment 3
Difference with embodiment 2 is, before second group of step of etching, uses the method for back-exposure to make mask protection
Layer, as shown in Figure 8:
1), producing spaced first group of step in substrate, step is:
A), substrate makes sacrifice layer and positive photoresist layer, by using mask to carry out photoetching, develop and corrode, carve
Losing two interval settings, the degree of depth is the step of d1；Wherein barrier bed 6, namely sacrifice layer, for lighttight chromium metal
Layer, substrate is can the quartz of ultraviolet light thoroughly；
B), spin coating positive photoresist again, use corresponding mask to carry out photoetching, develop and corrode, protection reaches to set deeply
Degree is the step of d1, etches remaining step further, forms the step that the degree of depth is d3；
2), between first group of step, second group of step is produced；Step is:
C), on the first group of step etched, at least coat negative photoresist, expose from backside of substrate, produce negative photo
The mask protection layer that glue is constituted；Spin coating positive photoresist again in substrate, uses corresponding mask to carry out photoetching, development
And corrosion, between first group of step, etch the step that a series of degree of depth is d2, so far, produce the micro-of 4 steps
Lens array.
The method of four step microlens arrays of above-mentioned making that the present invention is given, can equally be well applied to make more multi-step micro-
Lens array, here is omitted.
In technical scheme, first piece of mask plate annulus size is equivalently-sized with lenticule annulus, and required precision is high；
It is the highest that residue mask plate annulus need not precision, and size can reserve alignment surplus according to lenticule annulus size design；
Mask protection layer is chromium or silicon dioxide.In the above example of the present invention, it is also possible in operation, on sacrifice layer, growth hides
Barrier (such as chromium film).
The manufacture method of above-mentioned multi-step microlens array can effectively save Production Time, and lenticule precision is only by one
The precision of secondary mask lithography determines, fundamentally avoid conventional sleeve carving method make microlens array make because of mask alignment,
The inevitable cumulative error brought in the operation such as photoetching, etching, reduces difficulty, meets microlens array and made
High-precision requirement in journey, effectively ensures and improves the optical properties such as microlens array diffraction benefit.
A kind of specific embodiment given above, but the present invention is not limited to described embodiment.Hereinafter sum up this
Bright basic scheme.
The basic scheme of the present invention is, in order to solve existing method to operator and operation high the asking of equipment making required precision
Topic, proposes a kind of thinking, when making, first produces the step of ID in substrate at equal intervals；Foundation the most again
Technological process, on the interval on the step of each ID and between each step, performs etching, and forms set depth
Step.Substrate is produced the step of ID at equal intervals, has had the step of ID, it becomes possible to by be produced
Step position, make making precision not affected by error in the operations such as follow-up mask alignment, photoetching, etching,
And reduce mask, the required precision of the technique such as photoetching, etching.
After producing the step of ID, next step making, be given such as embodiment 1 is a kind of to be divided by step array
It is two groups of odd number group, even number set, makes the step often organized the most successively, often organize in the manufacturing process of step, every time
Etching, is all to synchronize to etch all steps being not fully complete, and the etching number of times required from starting to complete of each step and its
Sequence number in this set is consistent.As when manufacturing d3, its this odd number group being the 2nd step, therefore needs twice quarter altogether
Erosion, such as d5, is the 3rd step in its this odd number group, therefore needs altogether to etch for three times.
On the basis of according to basic scheme of the present invention, adoptable manufacture method is a lot, and embodiment 1 is only one of which.
The mode of embodiment 1 can be time-consuming, it practice, discounting for efficiency, it is also possible to make each step successively.
And, as the embodiment meeting embodiment 1 thinking, it is also possible to step array is divided into more group, rule is:
In each group, equally spaced setting between each step, on this interval, for arranging the step of other groups.
As: to array step d1, d2, d3, d4 ..., it is grouped divided by 3 gained remainders by step depth, has: the
One group: d1, d4, d7, d10 ... (remaining 1), second group: d2, d5, d8 ... (remaining 2), the 3rd group: d3, d6,
D9 ... (remaining 0), this packet, meet above-mentioned rule.
Then, it is possible to make first group, second group, the 3rd group successively.As when making d5 for second group, d5 is second group
Second step, therefore need twice etching to complete.
The basic ideas of the present invention are above-mentioned basic scheme, for those of ordinary skill in the art, according to the religion of the present invention
Lead, design the model of various deformation, formula, parameter are not required to spend creative work.Former without departing from the present invention
The change that in the case of reason and spirit, embodiment carried out, revise, replace and modification still falls within protection scope of the present invention.
Claims (8)
1. the manufacture method of a high accuracy multi-step microlens array, it is characterised in that first make at equal intervals in substrate
Go out the step of ID；The most again on the interval on the step of each ID and between each step, perform etching,
Form the step of set depth；
Lenticular all step depth are d1, d2, d3 ..., dn；The step of the method is as follows:
1), substrate is produced spaced first group of step:
A), etch the setting of a series of intervals in substrate, the degree of depth is the step of d1；
B), protection reaches the step that set depth is d1, etches remaining step further, and forming the degree of depth is d3
Step；
C), protection reaches the step that set depth is d3, etches remaining step further, the like, until
Etch first group of all of step d1, d3, d5 ..., dn；
2), between first group of step, second group of step is produced:
D), the first group of step etched is protected；The step that a series of degree of depth is d2 is etched between first group of step；
E), protection reaches the step that set depth is d2, etches remaining step further, and forming the degree of depth is d4's
Step；
F), protection reaches the step that set depth is d4, etches remaining step further, the like, until
Etch first group of all of step d2, d4, d6 ..., dn-1.
Manufacture method the most according to claim 1, it is characterised in that all steps to be produced are divided into two or two
Individual above group, is arranged between each step of each group at equal intervals；Make successively by group, make all steps of first group,
Make all steps of second group, the like；In the manufacturing process often organizing step, every subsynchronous etching is all to be not fully complete
Step；In one group of step, etching number of times and its sequence number in this group step that each step is experiencing from starting to complete
Equal.
Manufacture method the most according to claim 1, it is characterised in that etching in substrate described in step a)
The setting of a series of intervals, the degree of depth are that the method for the step of d1 is: first make sacrifice layer, spin coating light on sacrifice layer in substrate
Photoresist, utilizes corresponding mask to carry out photoetching, develop and corrode, then etching sacrificial layer and substrate.
Manufacture method the most according to claim 3, it is characterised in that etched first group of the protection described in step d)
The method of step is: at least makes mask protection layer on the first group of step etched, then peels off sacrifice layer.
Manufacture method the most according to claim 3, it is characterised in that described sacrifice layer not transmission ultraviolet light, step d)
The method of first group of step that described protection has etched is: at least coat negative photoresist on the first group of step etched,
It is exposed at backside of substrate, develops, then corrode, and erode sacrifice layer.
Manufacture method the most according to claim 3, it is characterised in that the material of described substrate is quartz, silicon or germanium.
Manufacture method the most according to claim 4, it is characterised in that described sacrifice layer is that negative photoresist or negativity are gathered
Acid imide.
Manufacture method the most according to claim 5, it is characterised in that described sacrifice layer is chromium or silicon dioxide.
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| CN107275194B (en) * | 2017-06-29 | 2020-01-24 | 杭州士兰集成电路有限公司 | Method for manufacturing stepped structure |
| CN110223957B (en) * | 2019-06-06 | 2021-04-27 | 西安增材制造国家研究院有限公司 | Surface gold film patterning method based on semiconductor multi-step deep etching |
| CN110416077A (en) * | 2019-07-12 | 2019-11-05 | 深圳市华星光电技术有限公司 | The dry etching method and film layer structure of film layer structure |
| CN111300163B (en) * | 2020-02-29 | 2021-03-02 | 湖南大学 | An ion beam polished large-area monolithic integrated Fabry-Pérot cavity color filter manufacturing method |
| CN111421390B (en) * | 2020-02-29 | 2021-10-12 | 湖南大学 | Ion beam polishing processing method for manufacturing micro-nano step array structure |
| CN113433617B (en) * | 2021-05-24 | 2022-12-20 | 金华博蓝特新材料有限公司 | Planar optical waveguide and its preparation method |
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| CN1402047A (en) * | 2002-07-13 | 2003-03-12 | 华中科技大学 | Process for mfg. multi-phase diffraction optic element |
| CN101171534A (en) * | 2005-05-02 | 2008-04-30 | 冲电气工业株式会社 | Diffractive optical component making method |
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| CN1402047A (en) * | 2002-07-13 | 2003-03-12 | 华中科技大学 | Process for mfg. multi-phase diffraction optic element |
| CN101171534A (en) * | 2005-05-02 | 2008-04-30 | 冲电气工业株式会社 | Diffractive optical component making method |
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Effective date of registration: 20211022 Address after: 201306 room A206, building 1, No. 336, Tianjiao Road, Lingang xinpian District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: AVIC Kaimai (Shanghai) Infrared Technology Co.,Ltd. Address before: 471009 No. 166, Jiefang Road, Henan, Luoyang Patentee before: CHINA AIRBORNE MISSILE ACADEMY |