CN103571644A - Water-based silicon wafer cleaning agent and preparation method thereof - Google Patents
Water-based silicon wafer cleaning agent and preparation method thereof Download PDFInfo
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- CN103571644A CN103571644A CN201310528004.2A CN201310528004A CN103571644A CN 103571644 A CN103571644 A CN 103571644A CN 201310528004 A CN201310528004 A CN 201310528004A CN 103571644 A CN103571644 A CN 103571644A
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Abstract
The invention provides a water-based silicon wafer cleaning agent. The cleaning agent is prepared from the following raw materials in parts by weight: 2-3 parts of sodium borate, 1-2 parts of potassium pyrophosphate, 3-4 parts of coconut oil alkylolamide phosphate, 4-5 parts of sodium alcohol ether sulphate, 2-3 parts of citric acid, 30-40 parts of ethanol, 4-5 parts of auxiliary and 100-120 parts of deionized water. The cleaning agent has the beneficial effects that the cleaning agent has the capability of quickly removing organic matters, metal ions, particles and the like, does not corrode silicon wafers, is lower in loss, reduces the cost and saves time, thus greatly reducing the rejection rates of the silicon wafers and manufacturing more silicon wafers with better quality more quickly; the auxiliary can form a protective film on the surfaces of the silicon wafers to isolate air and prevent water and other molecules in the atmosphere from corroding the silicon wafers; and the cleaning agent is resistant to oxidation and is convenient for operation of the next preparation process.
Description
Technical field
The present invention relates to clean-out system field, relate in particular to a kind of water base silicon slice detergent and preparation method thereof.
Background technology
The industry Wafer Cleanings such as silicon slice detergent is widely used in photovoltaic, electronics; Because silicon chip can pollute to some extent in transportation, surface cleanliness is not very high, the corrosion and the etching that are about to carry out is had a huge impact, so first will carry out a series of cleaning operation to silicon chip surface.First the general thinking of cleaning is to remove surperficial organic contaminations, and dissolved oxygen film then, because zone of oxidation is " contamination fall into into ", can cause epitaxy defect; Remove again particle, metal etc., make the surface passivation of silicon chip simultaneously.
Current most silicon slice detergent adopts a liquid and No. three liquid in RAC cleaning, but the aobvious alkalescence of liquid may cause silicon face coarse, strictly control temperature, concentration and time; No. three liquid is aobvious acid, has severe corrosive, also unfavorable to HUMAN HEALTH, production cost is high, irritant smell, contaminate environment, therefore require further improvement formula, with reach clean thorough, pollution-free, corrode little, to HUMAN HEALTH, circuit safety, the object that reduces costs.
Summary of the invention
The object of the present invention is to provide a kind of water base silicon slice detergent and preparation method thereof, this clean-out system have advantages of clean thoroughly, cleaning speed is fast.
Technical scheme of the present invention is as follows:
A silicon slice detergent, is characterized in that being made by the raw material of following weight part: Sodium Tetraborate 2-3, potassium pyrophosphate 1-2, Oleum Cocois alkylol amide phosphoric acid ester 3-4, polyoxyethylenated alcohol sodium sulfate 4-5, citric acid 2-3, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
The preparation method of described water base silicon slice detergent, it is characterized in that comprising the following steps: deionized water, Sodium Tetraborate, potassium pyrophosphate, Oleum Cocois alkylol amide phosphoric acid ester, polyoxyethylenated alcohol sodium sulfate, citric acid, ethanol are mixed, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
Beneficial effect of the present invention
Clean-out system of the present invention has to organism, metal ion, particle etc. the ability of removing fast, corrosion-free to silicon chip; Loss still less, reduces costs, thereby save time, reduces greatly silicon chip scrap rate, and produce faster more, the silicon chip of better quality.Auxiliary agent of the present invention can form protective membrane at silicon chip surface, and isolated air, prevents water and other molecule corrosion of silicon in atmosphere, anti-oxidant, facilitates next step manufacture craft to carry out.
Embodiment
A silicon slice detergent, by following weight part (kilogram) raw material make: Sodium Tetraborate 2.5, potassium pyrophosphate 2, Oleum Cocois alkylol amide phosphoric acid ester 3.5, polyoxyethylenated alcohol sodium sulfate 5, citric acid 3, ethanol 36, auxiliary agent 4.4, deionized water 110;
Described auxiliary agent by following weight part (kilogram) raw material make: Silane coupling reagent KH-570 2.5, oxidation inhibitor 1,035 1.5, phytic acid 1.5, morpholine 3.5, methacrylic acid-2-hydroxy methacrylate 3.5, ethanol 14; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 65 ℃, stirs after 25 minutes, then adds other remaining component, is warming up to 84 ℃, stirs 34 minutes, obtains.
The preparation method of described water base silicon slice detergent, comprise the following steps: deionized water, Sodium Tetraborate, potassium pyrophosphate, Oleum Cocois alkylol amide phosphoric acid ester, polyoxyethylenated alcohol sodium sulfate, citric acid, ethanol are mixed, under 1100 revs/min of stirrings, with the speed of 7 ℃/minute, be heated to 65 ℃, add other remaining components, continue to stir 18 minutes, obtain.
This water base silicon slice detergent is for cleaning silicon chip, and clean rate is 99.2%, can residual insolubles to cleaning silicon chip surface, do not produce new pollution, and do not affect the quality of product, the silicon chip surface after cleaning is clean, and color and luster is consistent, without piebald.
Claims (2)
1. a water base silicon slice detergent, is characterized in that being made by the raw material of following weight part: Sodium Tetraborate 2-3, potassium pyrophosphate 1-2, Oleum Cocois alkylol amide phosphoric acid ester 3-4, polyoxyethylenated alcohol sodium sulfate 4-5, citric acid 2-3, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
2. the preparation method of water base silicon slice detergent according to claim 1, it is characterized in that comprising the following steps: deionized water, Sodium Tetraborate, potassium pyrophosphate, Oleum Cocois alkylol amide phosphoric acid ester, polyoxyethylenated alcohol sodium sulfate, citric acid, ethanol are mixed, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
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CN201310528004.2A CN103571644A (en) | 2013-10-31 | 2013-10-31 | Water-based silicon wafer cleaning agent and preparation method thereof |
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CN201310528004.2A CN103571644A (en) | 2013-10-31 | 2013-10-31 | Water-based silicon wafer cleaning agent and preparation method thereof |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112458539A (en) * | 2020-09-23 | 2021-03-09 | 四川大学 | Porous silicon nanowire and preparation method thereof |
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WO2000011091A1 (en) * | 1998-08-18 | 2000-03-02 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
CN101265441A (en) * | 2008-05-09 | 2008-09-17 | 大连三达奥克化学股份有限公司 | Water-based cleaning agent for polycrystalline silicon wafers |
CN101314750A (en) * | 2008-06-13 | 2008-12-03 | 唐玉冰 | Silicon slice detergent and preparation thereof |
CN102304444A (en) * | 2011-08-01 | 2012-01-04 | 合肥华清金属表面处理有限责任公司 | Environmental-protection water-base cleaning agent for solar-grade silicon wafers |
CN103214886A (en) * | 2013-02-04 | 2013-07-24 | 安徽省繁昌县皖南阀门铸造有限公司 | A metal antirust oil containing butyl acrylate |
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2013
- 2013-10-31 CN CN201310528004.2A patent/CN103571644A/en active Pending
Patent Citations (5)
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WO2000011091A1 (en) * | 1998-08-18 | 2000-03-02 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
CN101265441A (en) * | 2008-05-09 | 2008-09-17 | 大连三达奥克化学股份有限公司 | Water-based cleaning agent for polycrystalline silicon wafers |
CN101314750A (en) * | 2008-06-13 | 2008-12-03 | 唐玉冰 | Silicon slice detergent and preparation thereof |
CN102304444A (en) * | 2011-08-01 | 2012-01-04 | 合肥华清金属表面处理有限责任公司 | Environmental-protection water-base cleaning agent for solar-grade silicon wafers |
CN103214886A (en) * | 2013-02-04 | 2013-07-24 | 安徽省繁昌县皖南阀门铸造有限公司 | A metal antirust oil containing butyl acrylate |
Non-Patent Citations (1)
Title |
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王守旭 等: ""硅烷偶联剂对多孔硅的稳定化研究"", 《含能材料》, vol. 20, no. 2, 30 April 2012 (2012-04-30), pages 223 - 228 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112458539A (en) * | 2020-09-23 | 2021-03-09 | 四川大学 | Porous silicon nanowire and preparation method thereof |
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Application publication date: 20140212 |