CN103589521A - Water-based cleaning agent for removal of silicon wafer surface stains and preparation method thereof - Google Patents
Water-based cleaning agent for removal of silicon wafer surface stains and preparation method thereof Download PDFInfo
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- CN103589521A CN103589521A CN201310527754.8A CN201310527754A CN103589521A CN 103589521 A CN103589521 A CN 103589521A CN 201310527754 A CN201310527754 A CN 201310527754A CN 103589521 A CN103589521 A CN 103589521A
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- cleaning agent
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 9
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- -1 polyoxyethylene phosphate Polymers 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 239000001509 sodium citrate Substances 0.000 claims abstract description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 6
- IMJURJWLPIOFGN-UHFFFAOYSA-N C(CS)(=O)O.C(CCCCCCCCCCC)[Na] Chemical compound C(CS)(=O)O.C(CCCCCCCCCCC)[Na] IMJURJWLPIOFGN-UHFFFAOYSA-N 0.000 claims description 6
- IMQLKJBTEOYOSI-GPIVLXJGSA-N Inositol-hexakisphosphate Chemical compound OP(O)(=O)O[C@H]1[C@H](OP(O)(O)=O)[C@@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@@H]1OP(O)(O)=O IMQLKJBTEOYOSI-GPIVLXJGSA-N 0.000 claims description 6
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims description 6
- IMQLKJBTEOYOSI-UHFFFAOYSA-N Phytic acid Natural products OP(O)(=O)OC1C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C1OP(O)(O)=O IMQLKJBTEOYOSI-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 239000003153 chemical reaction reagent Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 229940068041 phytic acid Drugs 0.000 claims description 6
- 239000000467 phytic acid Substances 0.000 claims description 6
- 235000002949 phytic acid Nutrition 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 claims description 6
- 229940038773 trisodium citrate Drugs 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229960004756 ethanol Drugs 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- 125000005395 methacrylic acid group Chemical group 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 4
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 150000002632 lipids Chemical class 0.000 abstract description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 229960001922 sodium perborate Drugs 0.000 abstract 2
- NXOJEYWSPSWQEP-UHFFFAOYSA-N C(C)(=O)OSCCCCCCCCCCCC.[Na] Chemical compound C(C)(=O)OSCCCCCCCCCCCC.[Na] NXOJEYWSPSWQEP-UHFFFAOYSA-N 0.000 abstract 1
- 230000003064 anti-oxidating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000002085 irritant Substances 0.000 description 1
- 231100000021 irritant Toxicity 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Landscapes
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A water-based cleaning agent for removal of silicon wafer surface stains comprises the following raw materials: by weight, 3-4 parts of octyl benzene alkyl polyoxyethylene phosphate, 2-3 parts of sodium dodecylthio acetate, 3-4 parts of sodium citrate, 1-2 parts of sodium perborate, 30-40 parts of ethanol, 4-5 parts of an auxiliary agent and 100-120 parts of deionized water. The cleaning agent has excellent cleaning effects to metal ions, lipids, inorganic matter particles and the like; the cleaning agent has good cleaning effects to the stains on the surface of a circuit board by use of the sodium perborate, has the effect for preventing producing of the stains on the surface of the circuit board, and is convenient to operate. The auxiliary agent of the cleaning agent can form a protective film on the surface of the circuit board for isolating air to prevent water and other molecules in the atmosphere from corroding the circuit board, is anti-oxidizing, and facilitates performing of a next-step manufacture process.
Description
Technical field
The present invention relates to clean-out system field, relate in particular to a kind of aqueous cleaning agent of removing silicon chip surface stain and preparation method thereof.
Background technology
The industry Wafer Cleanings such as silicon slice detergent is widely used in photovoltaic, electronics; Because silicon chip can pollute to some extent in transportation, surface cleanliness is not very high, the corrosion and the etching that are about to carry out is had a huge impact, so first will carry out a series of cleaning operation to silicon chip surface.First the general thinking of cleaning is to remove surperficial organic contaminations, and dissolved oxygen film then, because zone of oxidation is " contamination fall into into ", can cause epitaxy defect; Remove again particle, metal etc., make the surface passivation of silicon chip simultaneously.
Current most silicon slice detergent adopts a liquid and No. three liquid in RAC cleaning, but the aobvious alkalescence of liquid may cause silicon face coarse, strictly control temperature, concentration and time; No. three liquid is aobvious acid, has severe corrosive, also unfavorable to HUMAN HEALTH, production cost is high, irritant smell, contaminate environment, therefore require further improvement formula, with reach clean thorough, pollution-free, corrode little, to HUMAN HEALTH, circuit safety, the object that reduces costs.
Summary of the invention
The object of the present invention is to provide a kind of aqueous cleaning agent of removing silicon chip surface stain and preparation method thereof, this clean-out system have advantages of clean thoroughly, cleaning speed removes stain soon, fast.
Technical scheme of the present invention is as follows:
Remove an aqueous cleaning agent for silicon chip surface stain, it is characterized in that being made by the raw material of following weight part: octyl group benzene alkyl polyoxyethylene phosphate 3-4, dodecyl sodium thioglycolate 2-3, Trisodium Citrate 3-4, Sodium peroxoborate 1-2, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
The preparation method of the aqueous cleaning agent of described removal silicon chip surface stain, it is characterized in that comprising the following steps: deionized water, octyl group benzene alkyl polyoxyethylene phosphate, dodecyl sodium thioglycolate, Trisodium Citrate, ethanol are mixed, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, cool to again below 25 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
Beneficial effect of the present invention
Clean-out system of the present invention all has excellent cleaning performance to metal ion, lipid, particles of inorganic material etc.; And by using Sodium peroxoborate, good to the cleaning performance of circuit board surface stain, also have simultaneously and prevent that circuit board surface from forming the effect of stain, easy to operate.Auxiliary agent of the present invention can form protective membrane at circuit board surface, and isolated air, prevents water and other molecule open circuit potential plates in atmosphere, anti-oxidant, facilitates next step manufacture craft to carry out.
Embodiment
Remove an aqueous cleaning agent for silicon chip surface stain, by following weight part (kilogram) raw material make: octyl group benzene alkyl polyoxyethylene phosphate 3.6, dodecyl sodium thioglycolate 2.5, Trisodium Citrate 3.5, Sodium peroxoborate 1.5, ethanol 35, auxiliary agent 4.5, deionized water 110;
Described auxiliary agent by following weight part (kilogram) raw material make: Silane coupling reagent KH-570 2.5, oxidation inhibitor 1,035 1.5, phytic acid 1.5, morpholine 3.5, methacrylic acid-2-hydroxy methacrylate 3.5, ethanol 14; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 65 ℃, stirs after 25 minutes, then adds other remaining component, is warming up to 84 ℃, stirs 34 minutes, obtains.
The preparation method of the aqueous cleaning agent of described removal silicon chip surface stain, comprise the following steps: deionized water, octyl group benzene alkyl polyoxyethylene phosphate, dodecyl sodium thioglycolate, Trisodium Citrate, ethanol are mixed, under 1100 revs/min of stirrings, with the speed of 7 ℃/minute, be heated to 65 ℃, cool to again 22 ℃, add other remaining components, continue to stir 18 minutes, obtain.
This aqueous cleaning agent of removing silicon chip surface stain is for cleaning silicon chip, and clean rate is 99.4%, can residual insolubles to cleaning silicon chip surface, do not produce new pollution, and do not affect the quality of product, the silicon chip surface after cleaning is clean, and color and luster is consistent, without piebald.
Claims (2)
1. remove an aqueous cleaning agent for silicon chip surface stain, it is characterized in that being made by the raw material of following weight part: octyl group benzene alkyl polyoxyethylene phosphate 3-4, dodecyl sodium thioglycolate 2-3, Trisodium Citrate 3-4, Sodium peroxoborate 1-2, ethanol 30-40, auxiliary agent 4-5, deionized water 100-120;
Described auxiliary agent is made by the raw material of following weight part: Silane coupling reagent KH-570 2-3, oxidation inhibitor 1035 1-2, phytic acid 1-2, morpholine 3-4, methacrylic acid-2-hydroxy methacrylate 3-4, ethanol 12-15; Preparation method mixes Silane coupling reagent KH-570, phytic acid, ethanol, is heated to 60-70 ℃, stirs after 20-30 minute, then adds other remaining component, is warming up to 80-85 ℃, stirs 30-40 minute, obtains.
2. remove according to claim 1 the preparation method of the aqueous cleaning agent of silicon chip surface stain, it is characterized in that comprising the following steps: deionized water, octyl group benzene alkyl polyoxyethylene phosphate, dodecyl sodium thioglycolate, Trisodium Citrate, ethanol are mixed, under 1000-1200 rev/min of stirring, speed with 6-8 ℃/minute is heated to 60-70 ℃, cool to again below 25 ℃, add other remaining components, continue to stir 15-20 minute, obtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310527754.8A CN103589521A (en) | 2013-10-31 | 2013-10-31 | Water-based cleaning agent for removal of silicon wafer surface stains and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310527754.8A CN103589521A (en) | 2013-10-31 | 2013-10-31 | Water-based cleaning agent for removal of silicon wafer surface stains and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103589521A true CN103589521A (en) | 2014-02-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310527754.8A Pending CN103589521A (en) | 2013-10-31 | 2013-10-31 | Water-based cleaning agent for removal of silicon wafer surface stains and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103589521A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624423A (en) * | 2017-03-22 | 2018-10-09 | 中美矽晶制品股份有限公司 | Silicon wafer cleaning agent and method for cleaning silicon wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1129145B1 (en) * | 1998-08-18 | 2004-10-20 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| CN102304444A (en) * | 2011-08-01 | 2012-01-04 | 合肥华清金属表面处理有限责任公司 | Environmental-protection water-base cleaning agent for solar-grade silicon wafers |
| CN102746953A (en) * | 2012-07-24 | 2012-10-24 | 江苏科技大学 | Cleaning agent for removing stains on surface of silicon slice |
| CN103214886A (en) * | 2013-02-04 | 2013-07-24 | 安徽省繁昌县皖南阀门铸造有限公司 | A metal antirust oil containing butyl acrylate |
-
2013
- 2013-10-31 CN CN201310527754.8A patent/CN103589521A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1129145B1 (en) * | 1998-08-18 | 2004-10-20 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| CN102304444A (en) * | 2011-08-01 | 2012-01-04 | 合肥华清金属表面处理有限责任公司 | Environmental-protection water-base cleaning agent for solar-grade silicon wafers |
| CN102746953A (en) * | 2012-07-24 | 2012-10-24 | 江苏科技大学 | Cleaning agent for removing stains on surface of silicon slice |
| CN103214886A (en) * | 2013-02-04 | 2013-07-24 | 安徽省繁昌县皖南阀门铸造有限公司 | A metal antirust oil containing butyl acrylate |
Non-Patent Citations (1)
| Title |
|---|
| 王守旭 等: ""硅烷偶联剂对多孔硅的稳定化研究"", 《含能材料》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624423A (en) * | 2017-03-22 | 2018-10-09 | 中美矽晶制品股份有限公司 | Silicon wafer cleaning agent and method for cleaning silicon wafer |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140219 |