CN103367323B - Detect domain structure and detection method - Google Patents
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- CN103367323B CN103367323B CN201210091973.1A CN201210091973A CN103367323B CN 103367323 B CN103367323 B CN 103367323B CN 201210091973 A CN201210091973 A CN 201210091973A CN 103367323 B CN103367323 B CN 103367323B
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Abstract
The invention provides a kind of detection domain structure and detection method, described detection domain structure comprises multiple horizontal figure, longitudinal figure, through hole line and contact pad; Described horizontal figure is connected by through hole line is corresponding with longitudinal figure, forms the notch cuttype chain of multiple 45 degree of trends; Wherein except being positioned at the notch cuttype chain of described detection domain structure outermost, each notch cuttype chain has two adjacent notch cuttype chains, wherein the horizontal figure of an adjacent notch cuttype chain forms head's opposed configuration with the corresponding horizontal figure in this current notch cuttype chain, and the horizontal figure of another adjacent notch cuttype chain forms the parallel structure that is staggered with the corresponding transverse direction figure in current notch cuttype chain.Described detection domain structure and detection method can detect the switching performance of the less metal lead wire of size and the formation of through hole line, improve the performance of semiconductor device.
Description
Technical field
The present invention relates to integrated circuit fields, particularly relate to a kind of detection domain structure and detection method.
Background technology
Since semiconductor device comes out, the integrated level of semiconductor device is more and more higher, and the size of semiconductor element little by little reduces.When semiconductor device continue towards size reduce to increase with density develop time, one of them is limited in, and still requires to form reliable vlsi circuitry under less critical size.Such as, after the conductive interconnector layer of electronic circuit is formed, electrical successional measurement is carried out to it, with the electrical continuity of the reliability and vlsi circuitry that determine semiconductor device.To electrical successional measurement, be also referred to as wafer Acceptance Test (waferacceptancetesting; WAT), in order to Fast Measurement and revise may cause circuit defect technique become because of.
In semiconductor device, damascene process An is used to be formed with the metal lead wire of the integrated circuit in source circuit, along with device size constantly reduces, in interlayer dielectric layer, the etching depth-to-width ratio of the filling slot of metal lead wire constantly increases, distance between metal lead wire constantly reduces, create number of drawbacks problem, wherein, common a kind of be bridge joint problem (BridgeIssue) unnecessary between metal lead wire.When there are quality problems in semiconductor device, bridge joint problem is observed by peeling off Manufactured device, Fig. 1 ~ Fig. 3 shows the legend of metal lead wire bridge joint problem in prior art, wherein Fig. 1 is be the bridge joint problem produced between the metal lead wire of head's opposed configuration in prior art, bridge joint 1 is formed between the metal lead wire that head is relative, Fig. 2 and Fig. 3 is the bridge joint problem produced between the metal lead wire in the parallel structure that is staggered in prior art, bridge joint 2 is formed between the metal lead wire of the parallel structure that is staggered, 3, it can thus be appreciated that easily produce bridge joint problem between the metal lead wire in head's opposed configuration and the metal lead wire in parallel cross structure, the bridge joint problem of above-mentioned formation can cause electrical conductivity mistake in semiconductor device, even semiconductor device short circuit, the usefulness of semiconductor device is exerted an adverse impact, even reduce the yield of semiconductor device.And above-mentioned bridge joint problem is not often found by wafer Acceptance Test detection of the prior art, therefore obviously still there is inconvenience in existing wafer acceptance testing method.
Prior art proposes a kind of detection domain structure, Fig. 4 is a kind of vertical view detecting domain structure in prior art, Fig. 5 is the cutaway view detecting domain structure shown in Fig. 4, as shown in Figure 4 and Figure 5, prior art detects on the Cutting Road of such as wafer on non-chip structure region that domain structure 10 is arranged on wafer usually, is formed in one or more layers corresponding with metal interconnecting layer to be detected.Detect domain structure 10 comprise two layer patterns 11,12 and between two layer patterns 11,12 for being communicated with the through hole line 13 of two-layer graph layer, two layer patterns 11,12 are connected to form multiple linear pattern chain parallel to each other, linear pattern chain is detecting the edge head and the tail connection successively of domain structure, and be communicated with contact pad (Pad) place in end and draw, detect domain structure 10 and comprise the parallel figure that is staggered and head's relative graphical, can obtain by theory calculate the standard Standard resistance range detecting domain structure 10.The size of the metal lead wire of described detection domain structure 10 and quantity, the size of metal throuth hole and quantity all adapt with the process requirements on metal interconnecting layer to be detected on wafer, wafer is divided into numerous block to form countless identical chip structure, metal lead wire in described domain structure 10, the size of metal throuth hole and quantity all with a chip structure above the metal lead wire of metal interconnecting layer suitable with quantity with the size of metal throuth hole, then by measuring the actual resistance of domain structure 10, by comparing of actual resistance and standard resistance, when actual resistance exceeds standard Standard resistance range, and then judge that corresponding metal interconnecting layer to be detected does not meet technological requirement.But, because the metal throuth hole of metal interconnecting wires and metal lead wire have certain size, therefore the distance B formed between the parallel figure be staggered is greater than 0.9 μm in the domain structure 10 formed, the distance A detecting the structure between domain structure head relative graphical is greater than 1.0 μm, can not reduce further, thus cannot with the structure forming head's opposed configuration that in metal interconnecting wires to be detected, size is less and adapt with the parallel structure that is staggered, thus make testing result be difficult to reflect structure truth in metal interconnecting wires to be detected, cannot testing goal be reached.
Summary of the invention
The object of this invention is to provide a kind of detection domain structure and the detection method that can detect metal lead wire bridge joint problem in semiconductor device.
For solving the problem, the invention provides a kind of detection domain structure, it is characterized in that, comprising: multiple horizontal figure, multiple longitudinal figure, multiple through hole line and contact pad; Described horizontal figure is formed in the graph layer on the graph layer of described longitudinal figure place, described through hole is linear to be formed between described horizontal figure and described longitudinal figure, described horizontal figure is connected by through hole line is corresponding with longitudinal figure, form the notch cuttype chain of multiple 45 degree of trends, multiple described notch cuttype chain is connected in series by horizontal figure or longitudinal figure in the edge of described detection domain structure, and is drawn by the notch cuttype chain of outermost and the connection of contact pad; Wherein except being positioned at the notch cuttype chain of described detection domain structure outermost, each notch cuttype chain has two adjacent notch cuttype chains, wherein the horizontal figure of an adjacent notch cuttype chain forms head's opposed configuration with the corresponding horizontal figure in this current notch cuttype chain, and the horizontal figure of another adjacent notch cuttype chain forms the parallel structure that is staggered with the corresponding transverse direction figure in current notch cuttype chain.
Further, described detection domain structure is identical with quantity with the size of quantity, metal throuth hole with the size of the metal lead wire of metal interconnecting wires to be detected on described wafer.
Further, the quantity of head's opposed configuration in described detection domain structure, the described parallel number of structures be staggered are equal with the quantity of the quantity of the head's opposed configuration in metal interconnecting wires to be detected on described wafer, the described parallel structure that is staggered.
Further, the distance in described head's opposed configuration between two adjacent horizontal figures is 0.05 μm ~ 0.15 μm.
Further, the distance in described head's opposed configuration between two adjacent horizontal figures is 0.10 μm.
Further, the distance in the described parallel structure that is staggered between two adjacent horizontal figures is 0.05 μm ~ 0.15 μm.
Further, the distance in the described parallel structure that is staggered between two adjacent horizontal figures is 0.10 μm.
Further, the width of described horizontal figure is 0.08 μm ~ 0.18 μm, and the cross-sectional width of described through hole line is 0.07 μm ~ 0.11 μm, and the minimum range between adjacent through hole line is 0.08 μm ~ 0.18 μm.
Further, the width of described horizontal figure is 0.13 μm, and the cross-sectional width of described through hole line is 0.09 μm, and the minimum range between described adjacent two through hole line is 0.13 μm.
The present invention also provides a kind of detection method, comprises the following steps: at wafer setting test zone; Described wafer is formed multiple layer metal interconnection layer, and when forming metal interconnecting layer to be detected, corresponding formation described at least one on described test zone detects domain structure simultaneously, and theory determines the standard Standard resistance range of described detection domain structure; Measure the actual resistance of described detection domain structure, if actual resistance in the scope of described standard resistance, then judges that described metal interconnecting layer to be detected meets technological requirement, otherwise judge that described metal interconnecting layer to be detected does not meet technological requirement.
Further, described test zone is arranged in the Cutting Road of described wafer.。
Further, described metal interconnecting layer to be detected is one or more layers.
Further, described metal interconnecting layer to be detected is multilayer, and described detection domain structure has corresponding multiple of the metal interconnecting layer to be detected with each.
In sum, in detection domain structure of the present invention and metal interconnecting wires to be detected, the size of metal lead wire and metal throuth hole and quantity adapt, and the head's opposed configuration formed and the size of the parallel structure that is staggered can reach the size of actual head's opposed configuration and the parallel structure that is staggered in metal interconnecting wires to be detected, thus structure truth in metal interconnecting wires to be detected can be reacted exactly, when utilizing described detection domain structure to detect, compared with the standard Standard resistance range of the theoretical described detection domain structure determined by the actual resistance testing described detection domain structure, to determine detecting in domain structure whether bridge joint phenomenon occurs, and then determine, in corresponding metal interconnecting wires to be detected, whether bridge joint phenomenon occurs, and described detection method can be carried out in WAT test process, thus it is simple, fast, measure metal lead wire and metal throuth hole in semiconductor device exactly and whether bridge joint problem occurs, problem in Timeliness coverage semiconductor device, reduce cost of manufacture, improve the yield of semiconductor device.
Accompanying drawing explanation
Fig. 1 is the bridge joint problem produced between the metal lead wire in head's opposed configuration in prior art.
Fig. 2 and Fig. 3 is the bridge joint problem produced between the metal lead wire in parallel cross structure in prior art.
Fig. 4 is a kind of vertical view detecting domain structure in prior art.
Fig. 5 is the cutaway view detecting domain structure shown in Fig. 4.
Fig. 6 is the schematic diagram detecting domain structure in one embodiment of the invention.
Fig. 7 is the structural representation detecting notch cuttype chain in domain structure in one embodiment of the invention.
Fig. 8 is the schematic diagram detecting head's opposed configuration in domain structure in one embodiment of the invention.
Fig. 9 is the schematic diagram detecting the parallel structure that is staggered in domain structure in one embodiment of the invention.
Figure 10 is the schematic flow sheet of detection method in one embodiment of the invention.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
Secondly, the present invention's detailed statement that utilized schematic diagram to carry out, when describing example of the present invention in detail, for convenience of explanation, schematic diagram, should in this, as limitation of the invention not according to general ratio partial enlargement.
In the present embodiment, described " transverse direction ", " longitudinal direction " and " 45 degree of directions " are comparatively speaking, and under normal conditions, its horizontal, longitudinal direction formed parallels with the direction of the metal lead wire that wafer is formed or perpendicular.For clear succinct, in the present embodiment with laterally, longitudinally, 45 degree of directions are for the direction of view in Fig. 4.
Fig. 6 is the schematic diagram detecting domain structure in one embodiment of the invention.Fig. 7 is the structural representation detecting notch cuttype chain in domain structure in one embodiment of the invention.Fig. 8 is the schematic diagram detecting head's opposed configuration in domain structure in one embodiment of the invention.Fig. 9 is the schematic diagram detecting the parallel structure that is staggered in domain structure in one embodiment of the invention.
Shown in composition graphs 6 ~ Fig. 9, the invention provides a kind of detection domain structure, comprising: multiple horizontal figure, multiple longitudinal figure, multiple through hole line and contact pad.
As shown in Figure 6, described horizontal figure 101 is formed in the graph layer on the graph layer of described longitudinal figure 102 place, described through hole line 103 is formed between described horizontal figure 101 and described longitudinal figure 102, wherein said horizontal figure 101 is connected by through hole line 103 is corresponding with longitudinal figure 102, form the notch cuttype chain 300 as shown in Figure 7 of multiple 45 degree of trends, multiple described notch cuttype chain 300 is connected in series by horizontal figure 101 or longitudinal figure 102 in the edge of described detection domain structure 100, and pass through notch cuttype chain and the contact pad 104 of outermost, the connection of 105 is drawn.
Wherein, as shown in Figure 6, except the notch cuttype chain of described outermost, each notch cuttype chain has two adjacent notch cuttype chains, the horizontal figure of one adjacent notch cuttype chain forms head's opposed configuration 201 with the corresponding horizontal figure in this current notch cuttype chain, and the horizontal figure of another adjacent notch cuttype chain forms the parallel structure 203 that is staggered with the corresponding transverse direction figure in current notch cuttype chain.
In the present embodiment, metal interconnecting wires to be detected on described detection domain structure and wafer is suitable, and namely described detection domain structure is identical with quantity with the size of quantity, metal throuth hole with the size of the metal lead wire of metal interconnecting wires to be detected on described wafer.In theory, the size of the size of identical metal lead wire and quantity and same metal through hole and quantity, then the detection domain structure formed in theory is identical with metal interconnecting wires resistance to be detected on described wafer.Further, the quantity of head's opposed configuration in described detection domain structure, the described parallel number of structures be staggered and the quantity of the head's opposed configuration in metal interconnecting wires to be detected on described wafer, the described parallel number of structures be staggered are equal, then the pattern that formed of described detection domain structure and described metal interconnecting wires to be detected is close, the probability that bridge joint phenomenon occurs is close, thus can measure described metal interconnecting wires to be detected and whether meet technological requirement by measuring described detection domain structure.
As shown in Figure 8 with shown in Fig. 9, the distance C in described head's opposed configuration 201 between two adjacent horizontal figures 101
1it is 0.05 μm ~ 0.15 μm.In preferred embodiment, the distance C in described head's opposed configuration 201 between two adjacent horizontal figures 101
1it is 0.10 μm.Distance C in the described parallel structure 203 that is staggered between two adjacent horizontal figures 101
2it is 0.05 μm ~ 0.15 μm.Preferably, the distance C in the described parallel structure 203 that is staggered between two adjacent horizontal figures 101
2it is 0.10 μm.
As shown in Figure 8 with shown in Fig. 9, in one embodiment, in described cross direction profiles graph layer, the width d of horizontal figure 10 is 0.08 μm ~ 0.18 μm, the cross-sectional width b of described through hole line 103 is 0.07 μm ~ 0.11 μm, and between described adjacent through hole line 103, minimum distance a is 0.08 μm ~ 0.18 μm.In preferred embodiment, in described cross direction profiles graph layer, the width d of horizontal figure 101 is 0.13 μm, and the cross-sectional width b of described through hole line 103 is 0.09 μm, and the minimum range a between described adjacent through hole line 103 is 0.13 μm.
In the present embodiment, because " transverse direction " and " longitudinal direction " are relative definition, it is also definition relatively that described cross direction profiles graph layer is positioned on described genesis analysis graph layer.But the position relationship of described cross direction profiles graph layer and described genesis analysis graph layer is not defined, rotate the visual angle detecting domain, the position relationship also interchangeable of described cross direction profiles graph layer and described genesis analysis graph layer.Describe for clear at the present embodiment, be all positioned on described genesis analysis graph layer for cross direction profiles graph layer below.
Figure 10 is the schematic flow sheet of detection method in one embodiment of the invention.The present invention also provides a kind of detection method, and in conjunction with aforementioned detection domain structure, detection method comprises the following steps:
Step S01: at wafer setting test zone; Wherein said test zone can choose at random a region on wafer to carry out, and preferably described test zone is arranged in the Cutting Road of described wafer;
Step S02: form multiple layer metal interconnection layer on described wafer, formed wherein one or more layers metal interconnecting layer to be detected time, correspondence is formed one or more as detected domain structure as described in any one in claim 1 to 9 on described test zone simultaneously, and theory determines the standard Standard resistance range of described detection domain structure; The step forming described detection domain structure and the step forming semiconductor device on other regions of described wafer are carried out simultaneously, do not increase unnecessary processing step, save Production Time; Wherein, described metal interconnecting layer to be detected is one or more layers, described metal interconnecting layer to be detected be corresponding one or more layers, when described metal interconnecting layer to be detected is multilayer, described detection domain structure has corresponding multiple of the metal interconnecting layer to be detected with each;
Step S03: the actual resistance measuring described detection domain structure, if actual resistance is in the scope of described standard resistance, then judge that described metal interconnecting layer to be detected meets technological requirement, otherwise judge that described metal interconnecting layer to be detected does not meet technological requirement, only need contrast traditional structure resistance in WAT (fabrication test) test, just can judge whether that bridge joint occurs fast; In the scope of certain standard resistance, such as standard resistance 95% ~ 105% scope in all assert and meet technological requirement, when the certain limit exceeding standard resistance is outer, such as resistance is less than normal, and go beyond the scope, then can judge due to process problems, in detection domain structure, there occurs bridge joint phenomenon on a large scale, and then there is bridge joint phenomenon on a large scale equally in presumption, then can improve the yield that chip dispatches from the factory in metal interconnecting wires to be detected.
In sum, in detection domain structure of the present invention and metal interconnecting wires to be detected, the size of metal lead wire and metal throuth hole and quantity adapt, and the head's opposed configuration formed and the size of the parallel structure that is staggered can reach the size of actual head's opposed configuration and the parallel structure that is staggered in metal interconnecting wires to be detected, thus structure truth in metal interconnecting wires to be detected can be reacted exactly, when utilizing described detection domain structure to detect, compared with the standard Standard resistance range of the theoretical described detection domain structure determined by the actual resistance testing described detection domain structure, to determine detecting in domain structure whether bridge joint phenomenon occurs, and then determine, in corresponding metal interconnecting wires to be detected, whether bridge joint phenomenon occurs, and described detection method can be carried out in WAT test process, thus it is simple, fast, measure metal lead wire and metal throuth hole in semiconductor device exactly and whether bridge joint problem occurs, problem in Timeliness coverage semiconductor device, reduce cost of manufacture, improve the yield of semiconductor device.
Although the present invention discloses as above with preferred embodiment; so itself and be not used to limit the present invention; have in any art and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (10)
1. detect a domain structure, suitable with metal interconnecting wires to be detected on wafer, it is characterized in that, comprising: multiple horizontal figure, multiple longitudinal figure, multiple through hole line and contact pad;
Described horizontal figure is formed in the graph layer on the graph layer of described longitudinal figure place, described through hole is linear to be formed between described horizontal figure and described longitudinal figure, described horizontal figure is connected by through hole line is corresponding with longitudinal figure, form the notch cuttype chain of multiple 45 degree of trends, multiple described notch cuttype chain is connected in series by horizontal figure or longitudinal figure in the edge of described detection domain structure, and is drawn by the notch cuttype chain of outermost and the connection of contact pad; Wherein
Except being positioned at the notch cuttype chain of described detection domain structure outermost, each notch cuttype chain has two adjacent notch cuttype chains, wherein the horizontal figure of an adjacent notch cuttype chain forms head's opposed configuration with the corresponding horizontal figure in this current notch cuttype chain, and the horizontal figure of another adjacent notch cuttype chain forms the parallel structure that is staggered with the corresponding transverse direction figure in current notch cuttype chain;
Wherein, described detection domain structure is identical with quantity with the size of quantity, metal throuth hole with the size of the metal lead wire of metal interconnecting wires to be detected on described wafer; The quantity of head's opposed configuration in described detection domain structure, the described parallel number of structures be staggered are equal with the quantity of the quantity of the head's opposed configuration in metal interconnecting wires to be detected on described wafer, the described parallel structure that is staggered.
2. detect domain structure as claimed in claim 1, it is characterized in that, the distance in described head's opposed configuration between two adjacent horizontal figures is 0.05 μm ~ 0.15 μm.
3. detect domain structure as claimed in claim 2, it is characterized in that, the distance in described head's opposed configuration between two adjacent horizontal figures is 0.10 μm.
4. detect domain structure as claimed in claim 1, it is characterized in that, the distance in the described parallel structure that is staggered between two adjacent horizontal figures is 0.05 μm ~ 0.15 μm.
5. detect domain structure as claimed in claim 4, it is characterized in that, the distance in the described parallel structure that is staggered between two adjacent horizontal figures is 0.10 μm.
6. as the detection domain structure in claim 1 to 5 as described in any one, it is characterized in that, the width of described horizontal figure is 0.08 μm ~ 0.18 μm, and the cross-sectional width of described through hole line is 0.07 μm ~ 0.11 μm, and the minimum range between adjacent through hole line is 0.08 μm ~ 0.18 μm.
7. detect domain structure as claimed in claim 6, it is characterized in that, the width of described horizontal figure is 0.13 μm, and the cross-sectional width of described through hole line is 0.09 μm, and the minimum range between described adjacent two through hole line is 0.13 μm.
8. a detection method, comprising:
Wafer sets test zone;
Described wafer is formed multiple layer metal interconnection layer, formed wherein one or more layers metal interconnecting layer to be detected time, correspondence is formed one or more as detected domain structure as described in any one in claim 1 to 7 on described test zone simultaneously, and theory determines the standard Standard resistance range of described detection domain structure;
Measure the actual resistance of described detection domain structure, if actual resistance in the scope of described standard resistance, then judges that described metal interconnecting layer to be detected meets technological requirement, otherwise judge that described metal interconnecting layer to be detected does not meet technological requirement.
9. detection method as claimed in claim 8, it is characterized in that, described test zone is arranged in the Cutting Road of described wafer.
10. detection method as claimed in claim 8, it is characterized in that, described metal interconnecting layer to be detected is multilayer, and described detection domain structure has corresponding multiple of the metal interconnecting layer to be detected with each.
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| CN114167259A (en) * | 2021-12-07 | 2022-03-11 | 华东光电集成器件研究所 | Method for programming and testing on-off of through holes of multi-piece substrate |
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