CN103367323A - Detection layout structure and detection method - Google Patents
Detection layout structure and detection method Download PDFInfo
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- CN103367323A CN103367323A CN2012100919731A CN201210091973A CN103367323A CN 103367323 A CN103367323 A CN 103367323A CN 2012100919731 A CN2012100919731 A CN 2012100919731A CN 201210091973 A CN201210091973 A CN 201210091973A CN 103367323 A CN103367323 A CN 103367323A
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Abstract
The invention provides a detection layout structure and a detection method. The detection layout structure comprises a plurality of transverse graphs, a plurality of longitudinal graphs, through-hole wires lines and contact bonding pads, wherein the transverse graphs are correspondingly connected with the longitudinal graphs through the through-hole lines so as to form a plurality of 45-degree ladder type chains. Each of the ladder type chains excepts for those located at the most peripheral part of the detection layout structure is provided with two adjacent ladder type chains, wherein the transverse graph of one adjacent ladder type chain and a corresponding transverse graph of the current ladder type chain form an opposite structure head to head, and the transverse graph of the other ladder type chain and the corresponding transverse graph of the current ladder type chain form a parallel alternating structure. The detection layout structure and the detection method provided by the invention can detect the connection performance formed by metal leads with small dimensions and the through-hole lines, and improve the performance of semiconductor devices.
Description
Technical field
The present invention relates to integrated circuit fields, relate in particular to a kind of detection domain structure and detection method.
Background technology
Since semiconductor device came out, the integrated level of semiconductor device was more and more higher, and the size of semiconductor element is little by little dwindled.Lasting when size is dwindled with density increase development when semiconductor device, one of them is limited in, and still requires to form reliable vlsi circuitry under less critical size.For example, after the conductive interconnector layer of electronic circuit forms, it is carried out electrical successional measurement, with the reliability of decision semiconductor device and the electrical continuity of vlsi circuitry.To electrical successional measurement, be also referred to as wafer Acceptance Test (wafer acceptance testing; WAT), in order to Fast Measurement and revise the technique may cause circuit defect become because of.
In the semiconductor device, use damascene process An to be formed with the metal lead wire of the integrated circuit on the source circuit, along with device size constantly dwindles, the etching depth-to-width ratio of the filling slot of metal lead wire constantly increases in the interlayer dielectric layer, distance between the metal lead wire is constantly dwindled, produced the number of drawbacks problem, wherein, common a kind of be bridge joint problem (Bridge Issue) unnecessary between the metal lead wire.When quality problems appear in semiconductor device, observe the bridge joint problem by peeling off Manufactured device, Fig. 1～Fig. 3 has shown the legend of metal lead wire bridge joint problem in the prior art, wherein Fig. 1 is the bridge joint problem that produces between the metal lead wire of the relative structure of head in the prior art, form bridge joint 1 between the relative metal lead wire of head, Fig. 2 and Fig. 3 are the bridge joint problem that produces between the metal lead wire of the parallel structure that is staggered in the prior art, form bridge joint 2 between the metal lead wire of the parallel structure that is staggered, 3, hence one can see that is the metal lead wire of the relative structure of head and is and easily produce the bridge joint problem between the metal lead wire of parallel cross structure, the bridge joint problem of above-mentioned formation can cause electrically conducts mistake in the semiconductor device, even semiconductor device short circuit, usefulness to semiconductor device exerts an adverse impact, even reduces the yield of semiconductor device.And above-mentioned bridge joint problem often can not be found by wafer Acceptance Test detection of the prior art, and therefore obviously still there is inconvenience in existing wafer acceptance testing method.
Prior art proposes a kind of detection domain structure, Fig. 4 is a kind of vertical view that detects domain structure in the prior art, Fig. 5 is the cutaway view of detection domain structure shown in Figure 4, as shown in Figure 4 and Figure 5, prior art for example detects on the non-chip structure zone that domain structure 10 is arranged on wafer usually on the Cutting Road of wafer, forms in one or more layers corresponding with metal interconnecting layer to be detected.Detect domain structure 10 and comprise two layer patterns 11,12 and between two layer patterns 11,12, be used for being communicated with the through hole line 13 of two-layer graph layer, two layer patterns 11,12 link to each other and form a plurality of linear pattern chains parallel to each other, the linear pattern chain is successively head and the tail connection at the edge that detects domain structure, and locate to be communicated with contact pad (Pad) in the end and draw, detect domain structure 10 and comprise the parallel figure that is staggered figure relative to the head, can be by the theoretical standard Standard resistance range that obtains to detect domain structure 10 that calculates.The size of the metal lead wire of described detection domain structure 10 and quantity, the size of metal throuth hole and quantity all with wafer on processing procedure on the metal interconnecting layer to be detected require to adapt, be divided into numerous block on the wafer to form countless identical chip structures, metal lead wire in the described domain structure 10, the size of metal throuth hole and quantity all size and the quantity with the metal lead wire of the metal interconnecting layer of chip structure top and metal throuth hole are suitable, then by measuring the actual resistance of domain structure 10, comparison by actual resistance and standard resistance, when actual resistance exceeds the standard Standard resistance range, and then judge that corresponding metal interconnecting layer to be detected does not meet technological requirement.Yet, because metal throuth hole and the metal lead wire of metal interconnecting wires have certain size, therefore form in the domain structure 10 that forms between the parallel figure that is staggered apart from B greater than 0.9 μ m, detect the distance A of the structure between the relative figure of domain structure head greater than 1.0 μ m, can not further dwindle, thereby can't with form metal interconnecting wires to be detected in the structure that adapts of the less relative structure of head of size and the parallel structure that is staggered, thereby make testing result be difficult to reflect structure truth in the metal interconnecting wires to be detected, can't reach testing goal.
Summary of the invention
The purpose of this invention is to provide a kind of detection domain structure and detection method that can detect metal lead wire bridge joint problem in the semiconductor device.
For addressing the above problem, the invention provides a kind of detection domain structure, it is characterized in that, comprising: a plurality of horizontal figures, a plurality of vertical figure, a plurality of through hole line and contact pad; Described horizontal figure is formed in the graph layer on the graph layer of described vertical figure place, described through hole is linear to be formed between described horizontal figure and the described vertical figure, described horizontal figure links to each other by the through hole line is corresponding with vertical figure, form the notch cuttype chain of a plurality of 45 degree trends, a plurality of described notch cuttype chains are connected in series by horizontal figure or vertical figure in the edge of described detection domain structure, and draw with being connected of contact pad by the notch cuttype chain of outermost; Wherein except the notch cuttype chain that is positioned at described detection domain structure outermost, each notch cuttype chain has two adjacent notch cuttype chains, wherein the horizontal figure of an adjacent notch cuttype chain forms the relative structure of head with corresponding laterally figure in this current notch cuttype chain, and the horizontal figure of the notch cuttype chain that another is adjacent forms the parallel structure that is staggered with corresponding horizontal figure in the current notch cuttype chain.
Further, size and the quantity of the size of the metal lead wire of metal interconnecting wires to be detected and quantity, metal throuth hole are identical on described detection domain structure and the described wafer.
Further, the quantity of the relative structure of head in the metal interconnecting wires to be detected, the quantity of the described parallel structure that is staggered equate on the quantity of the relative structure of head in the described detection domain structure, the described parallel number of structures that is staggered and the described wafer.
Further, the distance between the two adjacent horizontal figures is 0.05 μ m～0.15 μ m in the relative structure of described head.
Further, the distance between the two adjacent horizontal figures is 0.10 μ m in the relative structure of described head.
Further, the distance between the two adjacent horizontal figures is 0.05 μ m～0.15 μ m in the described parallel structure that is staggered.
Further, the distance between the two adjacent horizontal figures is 0.10 μ m in the described parallel structure that is staggered.
Further, the width of described horizontal figure is 0.08 μ m～0.18 μ m, and the cross-sectional width of described through hole line is 0.07 μ m～0.11 μ m, and the minimum range between the adjacent through hole line is 0.08 μ m～0.18 μ m.
Further, the width of described horizontal figure is 0.13 μ m, and the cross-sectional width of described through hole line is 0.09 μ m, and the minimum range between the described adjacent two through hole line is 0.13 μ m.
The present invention also provides a kind of detection method, may further comprise the steps: set test zone at wafer; Form the multiple layer metal interconnection layer at described wafer, corresponding to described at least one described detection domain structure of test zone formation simultaneously when forming metal interconnecting layer to be detected, and the theoretical standard Standard resistance range of determining described detection domain structure; Measure the actual resistance of described detection domain structure, meet technological requirement if actual resistance in the scope of described standard resistance, is then judged described metal interconnecting layer to be detected, otherwise judge that described metal interconnecting layer to be detected does not meet technological requirement.
Further, described test zone is arranged in the Cutting Road of described wafer.。
Further, described metal interconnecting layer to be detected is one or more layers.
Further, described metal interconnecting layer to be detected is multilayer, and described detection domain structure has corresponding with each metal interconnecting layer to be detected a plurality of.
In sum, size and the quantity of metal lead wire and metal throuth hole adapt in detection domain structure of the present invention and the metal interconnecting wires to be detected, and the relative structure of head that forms and the size of the parallel structure that is staggered can reach the size of the relative structure of actual head and the parallel structure that is staggered in the metal interconnecting wires to be detected, thereby can react exactly structure truth in the metal interconnecting wires to be detected; When utilizing described detection domain structure to detect, actual resistance by testing described detection domain structure compares with the standard Standard resistance range of the theoretical described detection domain structure of determining, to determine detecting in the domain structure whether the bridge joint phenomenon occurs, and then determine in the corresponding metal interconnecting wires to be detected whether the bridge joint phenomenon to occur, and described detection method can be carried out in the WAT test process, thereby simple, fast, measure exactly whether metal lead wire and metal throuth hole the bridge joint problem occurs in the semiconductor device, in time find the problem in the semiconductor device, reduce cost of manufacture, improve the yield of semiconductor device.
Description of drawings
Fig. 1 is the bridge joint problem that produces between the metal lead wire of the relative structure of head in the prior art.
Fig. 2 and Fig. 3 are the bridge joint problem that produces between the metal lead wire of parallel cross structure in the prior art.
Fig. 4 is a kind of vertical view that detects domain structure in the prior art.
Fig. 5 is the cutaway view of detection domain structure shown in Figure 4.
Fig. 6 is the schematic diagram that detects domain structure in one embodiment of the invention.
Fig. 7 is the structural representation that detects notch cuttype chain in the domain structure in one embodiment of the invention.
Fig. 8 is the schematic diagram that detects the relative structure of head in the domain structure in one embodiment of the invention.
Fig. 9 is the schematic diagram that detects the parallel structure that is staggered in the domain structure in one embodiment of the invention.
Figure 10 is the schematic flow sheet of detection method in one embodiment of the invention.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in protection scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, and when example of the present invention was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as limitation of the invention.
In the present embodiment, described " laterally ", " vertically " reach " 45 degree direction " for comparatively speaking, under normal conditions, the direction of the metal lead wire that forms on horizontal, the longitudinal direction of its formation and the wafer parallels or is perpendicular.For clear succinct, in the present embodiment with laterally, vertically, the direction of 45 degree directions view in Fig. 4 is as example.
Fig. 6 is the schematic diagram that detects domain structure in one embodiment of the invention.Fig. 7 is the structural representation that detects notch cuttype chain in the domain structure in one embodiment of the invention.Fig. 8 is the schematic diagram that detects the relative structure of head in the domain structure in one embodiment of the invention.Fig. 9 is the schematic diagram that detects the parallel structure that is staggered in the domain structure in one embodiment of the invention.
In conjunction with Fig. 6～shown in Figure 9, the invention provides a kind of detection domain structure, comprising: a plurality of horizontal figures, a plurality of vertical figure, a plurality of through hole line and contact pad.
As shown in Figure 6, described horizontal figure 101 is formed in the graph layer on described vertical figure 102 place graph layers, described through hole line 103 is formed between described horizontal figure 101 and the described vertical figure 102, wherein said horizontal figure 101 is by through hole line 103 and vertical 102 corresponding linking to each other of figure, form the notch cuttype chain 300 as shown in Figure 7 of a plurality of 45 degree trends, a plurality of described notch cuttype chains 300 are connected in series by horizontal figure 101 or vertical figure 102 in the edge of described detection domain structure 100, and pass through notch cuttype chain and the contact pad 104 of outermost, 105 connection is drawn.
Wherein, as shown in Figure 6, except the notch cuttype chain of described outermost, each notch cuttype chain has two adjacent notch cuttype chains, the horizontal figure of one adjacent notch cuttype chain forms the relative structure 201 of head with corresponding laterally figure in this current notch cuttype chain, and the horizontal figure of the notch cuttype chain that another is adjacent forms the parallel structure 203 that is staggered with corresponding horizontal figure in the current notch cuttype chain.
In the present embodiment, metal interconnecting wires to be detected on described detection domain structure and the wafer is suitable, and namely size and the quantity of the size of the metal lead wire of metal interconnecting wires to be detected and quantity, metal throuth hole are identical on described detection domain structure and the described wafer.In theory, size and the quantity of the size of identical metal lead wire and quantity and same metal through hole, metal interconnecting wires resistance to be detected on the detection domain structure that then forms in theory and the described wafer is identical.Further, quantity, the described parallel number of structures that is staggered of the relative structure of head on the quantity of the relative structure of head in the described detection domain structure, the described parallel number of structures that is staggered and the described wafer in the metal interconnecting wires to be detected equate, then described detection domain structure and the formed pattern of described metal interconnecting wires to be detected approach, the probability that the bridge joint phenomenon occurs is close, thereby can measure described metal interconnecting wires to be detected and whether meet technological requirement by measuring described detection domain structure.
As shown in Figure 8 with shown in Figure 9, the distance C in the relative structure 201 of described head between the two adjacent horizontal figures 101
1Be 0.05 μ m～0.15 μ m.In preferred embodiment, the distance C in the relative structure 201 of described head between the two adjacent horizontal figures 101
1Be 0.10 μ m.Distance C in the described parallel structure 203 that is staggered between the two adjacent horizontal figures 101
2Be 0.05 μ m～0.15 μ m.Better, the distance C in the described parallel structure 203 that is staggered between the two adjacent horizontal figures 101
2Be 0.10 μ m.
As shown in Figure 8 with shown in Figure 9, in one embodiment, the width d of horizontal figure 10 is 0.08 μ m～0.18 μ m in the described cross direction profiles graph layer, the cross-sectional width b of described through hole line 103 is 0.07 μ m～0.11 μ m, and minimum between the described adjacent through hole line 103 is 0.08 μ m～0.18 μ m apart from a.In preferred embodiment, in the described cross direction profiles graph layer laterally the width d of figure 101 be 0.13 μ m, the cross-sectional width b of described through hole line 103 is 0.09 μ m, the minimum range a between the described adjacent through hole line 103 is 0.13 μ m.
In the present embodiment, " be relative definition, it also is relative the definition that described cross direction profiles graph layer is positioned on described vertical distribution pattern layer because " laterally " with " vertically.But the position relationship of described cross direction profiles graph layer and described vertical distribution pattern layer is not defined, and rotation detects the visual angle of domain, and the position relationship of described cross direction profiles graph layer and described vertical distribution pattern layer is interchangeable also.Describe for clear at the present embodiment, below all be positioned on described vertical distribution pattern layer as example take the cross direction profiles graph layer.
Figure 10 is the schematic flow sheet of detection method in one embodiment of the invention.The present invention also provides a kind of detection method, and in conjunction with aforementioned detection domain structure, detection method may further comprise the steps:
Step S01: set test zone at wafer; Wherein said test zone can choose at random a zone at wafer to carry out, and better described test zone is arranged in the Cutting Road of described wafer;
Step S02: form the multiple layer metal interconnection layer at described wafer, when forming wherein one or more layers metal interconnecting layer to be detected, simultaneously corresponding form at described test zone one or more such as detection domain structure as described in any one in the claim 1 to 9, and the theoretical standard Standard resistance range of determining described detection domain structure; Form the step of described detection domain structure and carry out simultaneously with the step that forms semiconductor device in other zones of described wafer, do not increase unnecessary processing step, save Production Time; Wherein, described metal interconnecting layer to be detected is one or more layers, described metal interconnecting layer to be detected be corresponding one or more layers, when described metal interconnecting layer to be detected was multilayer, described detection domain structure had corresponding with each metal interconnecting layer to be detected a plurality of;
Step S03: the actual resistance of measuring described detection domain structure, if actual resistance is in the scope of described standard resistance, judge that then described metal interconnecting layer to be detected meets technological requirement, otherwise judge that described metal interconnecting layer to be detected does not meet technological requirement, only need the traditional structure resistance of contrast in WAT (wafer testing electrical property) test, just can judge whether fast that bridge joint occurs; In the scope of certain standard resistance, for example all assert in 95%～105% of the standard resistance the scope and meet technological requirement, when outside the certain limit that exceeds the standard resistance, for example resistance is less than normal, and go beyond the scope, then can judge because the processing procedure problem in detecting domain structure bridge joint phenomenon has on a large scale occured, and then infer and bridge joint phenomenon on a large scale in metal interconnecting wires to be detected, occurs equally, then can improve the yield that chip dispatches from the factory.
In sum, size and the quantity of metal lead wire and metal throuth hole adapt in detection domain structure of the present invention and the metal interconnecting wires to be detected, and the relative structure of head that forms and the size of the parallel structure that is staggered can reach the size of the relative structure of actual head and the parallel structure that is staggered in the metal interconnecting wires to be detected, thereby can react exactly structure truth in the metal interconnecting wires to be detected; When utilizing described detection domain structure to detect, actual resistance by testing described detection domain structure compares with the standard Standard resistance range of the theoretical described detection domain structure of determining, to determine detecting in the domain structure whether the bridge joint phenomenon occurs, and then determine in the corresponding metal interconnecting wires to be detected whether the bridge joint phenomenon to occur, and described detection method can be carried out in the WAT test process, thereby simple, fast, measure exactly whether metal lead wire and metal throuth hole the bridge joint problem occurs in the semiconductor device, in time find the problem in the semiconductor device, reduce cost of manufacture, improve the yield of semiconductor device.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention; have in the technical field under any and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (12)
1. one kind is detected domain structure, suitable with metal interconnecting wires to be detected on the wafer, it is characterized in that, comprising: a plurality of horizontal figures, a plurality of vertical figure, a plurality of through hole line and contact pad;
Described horizontal figure is formed in the graph layer on the graph layer of described vertical figure place, described through hole is linear to be formed between described horizontal figure and the described vertical figure, described horizontal figure links to each other by the through hole line is corresponding with vertical figure, form the notch cuttype chain of a plurality of 45 degree trends, a plurality of described notch cuttype chains are connected in series by horizontal figure or vertical figure in the edge of described detection domain structure, and draw with being connected of contact pad by the notch cuttype chain of outermost; Wherein
Except the notch cuttype chain that is positioned at described detection domain structure outermost, each notch cuttype chain has two adjacent notch cuttype chains, wherein the horizontal figure of an adjacent notch cuttype chain forms the relative structure of head with corresponding laterally figure in this current notch cuttype chain, and the horizontal figure of the notch cuttype chain that another is adjacent forms the parallel structure that is staggered with corresponding horizontal figure in the current notch cuttype chain.
2. detection domain structure as claimed in claim 1 is characterized in that, size and the quantity of the size of the metal lead wire of metal interconnecting wires to be detected and quantity, metal throuth hole are identical on described detection domain structure and the described wafer.
3. detection domain structure as claimed in claim 2, it is characterized in that, the quantity of the relative structure of head on the quantity of the relative structure of head in the described detection domain structure, the described parallel number of structures that is staggered and the described wafer in the metal interconnecting wires to be detected, the quantity of the described parallel structure that is staggered equate.
4. detection domain structure as claimed in claim 1 is characterized in that, the distance in the relative structure of described head between the two adjacent horizontal figures is 0.05 μ m～0.15 μ m.
5. detection domain structure as claimed in claim 4 is characterized in that, the distance in the relative structure of described head between the two adjacent horizontal figures is 0.10 μ m.
6. detection domain structure as claimed in claim 1 is characterized in that, the distance in the described parallel structure that is staggered between the two adjacent horizontal figures is 0.05 μ m～0.15 μ m.
7. detection domain structure as claimed in claim 6 is characterized in that, the distance in the described parallel structure that is staggered between the two adjacent horizontal figures is 0.10 μ m.
8. such as the described detection domain structure of any one in the claim 1 to 7, it is characterized in that, the width of described horizontal figure is 0.08 μ m～0.18 μ m, and the cross-sectional width of described through hole line is 0.07 μ m～0.11 μ m, and the minimum range between the adjacent through hole line is 0.08 μ m～0.18 μ m.
9. detection domain structure as claimed in claim 8 is characterized in that, the width of described horizontal figure is 0.13 μ m, and the cross-sectional width of described through hole line is 0.09 μ m, and the minimum range between the described adjacent two through hole line is 0.13 μ m.
10. detection method comprises:
Set test zone at wafer;
Form the multiple layer metal interconnection layer at described wafer, when forming wherein one or more layers metal interconnecting layer to be detected, simultaneously corresponding form at described test zone one or more such as detection domain structure as described in any one in the claim 1 to 9, and the theoretical standard Standard resistance range of determining described detection domain structure;
Measure the actual resistance of described detection domain structure, meet technological requirement if actual resistance in the scope of described standard resistance, is then judged described metal interconnecting layer to be detected, otherwise judge that described metal interconnecting layer to be detected does not meet technological requirement.
11. detection method as claimed in claim 10 is characterized in that, described test zone is arranged in the Cutting Road of described wafer.
12. detection method as claimed in claim 10 is characterized in that, described metal interconnecting layer to be detected is multilayer, and described detection domain structure has corresponding with each metal interconnecting layer to be detected a plurality of.
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