CN203895444U - Contact hole bridging test structure - Google Patents
Contact hole bridging test structure Download PDFInfo
- Publication number
- CN203895444U CN203895444U CN201420103460.2U CN201420103460U CN203895444U CN 203895444 U CN203895444 U CN 203895444U CN 201420103460 U CN201420103460 U CN 201420103460U CN 203895444 U CN203895444 U CN 203895444U
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- Prior art keywords
- contact hole
- test structure
- metal plug
- connector chain
- hole bridging
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- 238000012360 testing method Methods 0.000 title claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000007547 defect Effects 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model relates to a contact hole bridging test structure including an insulation medium layer formed on a semiconductor substrate; a plurality of contact holes penetrating through the insulation medium layer; first metal plugs and second metal plugs formed in the contact holes; and first plug chains connected with the first metal plugs and second plug chains connected with the second metal plugs. The distance between each first metal plug and each second metal plug that are adjacent to each other is between 0.1 and 0.2 micrometer. Whether the to-be-detected semi-conductor substrate has a contact hole bridging defect can be judged through testing whether current flows through the contact hole bridging test structure.
Description
Technical field
The utility model relates to integrated circuit and manufactures field, particularly a kind of contact hole bridging test structure.
Background technology
Semiconductor device is made in production process, conventionally need define through active area, shallow trench isolation generates from (STI), source-drain electrode, contact hole (contact hole) forms, metal interconnection wire is made, wafer can acceptance test and the step such as encapsulation.
As shown in Figure 1, existing contact hole forms technique and generally includes following steps: first, in Semiconductor substrate 110, form shallow trench isolation from 120, and in the active area of Semiconductor substrate 110 (AA) formation source/drain electrode and grid, thereby form transistor; Then, on substrate 110, form insulating medium layer 140, and described in etching, insulating medium layer 140 forms contact hole (contact hole), then in contact hole, fill metal and form metal plug (plug) 190; Finally, carry out metal interconnection wire manufacture craft, metal plug 190 is connected with metal interconnecting wires 150 electricity.Form in technique at above-mentioned contact hole, it is bad likely to there is fracture in the insulating medium layer 140 that adjacent two metal plug is 190, metal plug 190 is led in fracture gap 195 always, make in the time filling metal to contact hole, metal also fills up fracture gap 195, causes occurring contact hole bridging (CT bridge) defect.
Owing to there will be various defects contact hole bridging described above defect in semiconductor device manufacturing process, after element manufacturing completes, needing can acceptance test (wafer acceptance test through wafer, WAT), whether have normal ability to work with test component.The device that WAT tests is the contact hole bridging test structure (Test structure or test key) being positioned at above Cutting Road, so both can effectively utilize the space of Cutting Road, again can be via the contact hole bridging test structure above the each Cutting Road of test, go near the device in chip inferring electrically whether to meet the requirements.Fig. 2 is the schematic diagram of testing the receivable test structure of wafer of metal plug resistance in prior art.As shown in Figure 2, the test structure of described metal plug resistance comprises the insulating medium layer being formed on Semiconductor substrate; Run through some contact holes of described insulating medium layer; Be formed at the metal plug in described contact hole; Described metal plug is uniformly distributed in test structure, and spacing L is 1.2～1.5 microns, and described metal plug resistance is all series in test circuit.Metal plug resistance test structure measure be n metal plug resistance with.But above-mentioned contact hole bridging test structure there are the following problems: on the one hand because contact hole is at a distance of distant, L value is generally 1.2～1.5 microns, be difficult to occur contact hole bridging defect, near the real conditions of the interior contact hole of device in the chip real embodiment of having no way goes out; Even on the other hand in the time there is to put up a bridge connection in certain two metal plug, concerning test circuit, the resistance variations of circuit is not obvious, being difficult to judge whether to come in contact hole according to the variation of resistance value puts up a bridge, that is to say to utilize the receivable test structure of wafer of existing test metal plug resistance accurately to detect whether there is contact hole bridging defect.
Summary of the invention
The purpose of this utility model provides a kind of contact hole bridging test structure, can monitor contact hole bridging defect by acceptance test for wafer.
In order to solve the problems of the technologies described above, the utility model provides a kind of contact hole bridging test structure, comprising: be formed at the insulating medium layer in semi-conductive substrate; Run through some contact holes of described insulating medium layer; Be formed at the first metal plug and the second metal plug in described contact hole; At least one the first connector chain being connected with described the first metal plug and at least one the second connector chain being connected with described the second metal plug, the first adjacent metal plug and the spacing of the second metal plug are between 0.1 μ m～0.2 μ m.
Optionally, described contact hole bridging test structure, also comprises the first weld pad being connected with described the first connector chain and the second weld pad being connected with described the second connector chain.
Optionally, described the first connector chain takes the shape of the letter U, and linearly, described the second connector chain is arranged in described the first connector chain described the second connector chain.
Optionally, described the first connector chain and the second connector chain all twist, and the two mutually around.
Optionally, described the first connector chain and the second connector chain all take the shape of the letter U, and the two interspersed setting.
Optionally, described the first metal plug and the second metal plug are cubic cylinder.
The spacing of the first optionally, adjacent metal plug is between 0.1 μ m～0.2 μ m.
The spacing of the second optionally, adjacent metal plug is between 0.1 μ m～0.2 μ m.
Optionally, described the first connector chain is connected with a test circuit with after the second connector chain series connection.
Optionally, described contact hole bridging test structure is formed on the Cutting Road of Semiconductor substrate.
Compared with prior art, the contact hole bridging test structure that the utility model provides comprises the first metal plug and the second metal plug, the first adjacent metal plug and the spacing of the second metal plug are between 0.1 μ m～0.2 μ m, described contact hole bridging test structure easily comes in contact hole and puts up a bridge, by determining in the test circuit being connected with this test structure whether have electric current by judging whether to come in contact hole bridging defect.
Brief description of the drawings
Fig. 1 comes in contact the Semiconductor substrate profile of putting up a bridge in hole in prior art;
Fig. 2 is the receivable test structure of wafer schematic diagram of testing contact hole resistance in prior art;
Fig. 3 is the vertical view of a kind of contact hole bridging test structure of the utility model embodiment;
Fig. 4 be Fig. 3 along AA ' to cutaway view;
Fig. 5 is the vertical view of the another kind of contact hole bridging test structure of the utility model embodiment;
Fig. 6 is the vertical view of another contact hole bridging test structure of the utility model embodiment.
Embodiment
Below in conjunction with schematic diagram, the utility model is described in more detail, wherein represent preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of aid illustration the utility model embodiment lucidly.
Fig. 3 is the vertical view of a kind of contact hole bridging test structure of the utility model embodiment, Fig. 4 be Fig. 3 along AA ' to cutaway view.As shown in Figure 3 and Figure 4, the utility model provides a kind of contact hole bridging test structure, comprising: be formed at the insulating medium layer 240 in semi-conductive substrate 210; Run through some contact holes of described insulating medium layer 240; Be formed at the first metal plug 270 and the second metal plug 280 in described contact hole; The the first connector chain 271 being connected with described the first metal plug 270 and the second connector chain 281 being connected with described the second metal plug 280, the first adjacent metal plug 270 and the spacing of the second metal plug 280 are 0.1～0.2 μ m.Because the distance between adjacent the first metal plug 270 and the second metal plug 280 is very little, while coming in contact hole bridging, be equivalent to test circuit and be switched on, now there is electric current to pass through, can detect bridging defect by this contact hole bridging test structure.
Optionally, described contact hole bridging test structure also comprises the first weld pad 272 being connected with the first connector chain 271 and the second weld pad 282 being connected with the second connector chain 281, utilize above-mentioned the first weld pad 272 and the second weld pad 282 to be electrically connected with test circuit, be beneficial to test.
Described contact hole bridging test structure can be formed on the Cutting Road of Semiconductor substrate.The manufacturing process of described contact hole bridging test structure can be identical with the manufacturing process of the device in Semiconductor substrate.As shown in Figure 4, in Semiconductor substrate 210, form shallow trench isolation from 220, and in the active area of Semiconductor substrate 210 formation source/drain electrode and grid, thereby form transistor; Then, on substrate 210, form insulating medium layer 240, and described in etching, insulating medium layer 240 forms contact hole, then in contact hole, fill metal and form the first metal plug 270 and the second metal plug 280; Finally, carry out metal interconnection wire 250 manufacture crafts, described the first metal plug 270 and the second metal plug 280 are connected with the metal interconnection wire 250 of top separately respectively, and are connected into the first metal plug chain 271 and the second metal plug chain 281 by metal interconnecting wires 250.The utility model does not limit the number of plies of metal interconnecting wires, and the embodiment that gives only comprises layer of metal interconnection line 250.
As shown in Figure 3, the first connector chain 271 of the present embodiment takes the shape of the letter U, described the second connector chain 281 linearly, the second connector chain 281 described in described the first connector chain 217 semi-surroundings.And the contact hole count of the second connector chain 281 is n, the contact hole quantity of the first connector chain 271 is n+3.
Fig. 5 is the vertical view of the another kind of contact hole bridging test structure of the utility model embodiment; Fig. 6 is the vertical view of another contact hole bridging test structure of the utility model embodiment.The utility model does not limit the shape of the first connector chain and the second connector chain.As shown in Figure 5, the first connector chain 371 and the second connector chain 381 can also be all twist, the two replaces mutually, mutually around.Or as shown in Figure 6, described the first connector chain 471 and the second connector chain 481 all take the shape of the letter U, the two relatively interts and arranges.Equally, the utility model does not limit the quantity of the first connector chain and the second connector chain, can comprise the first connector chain of many series connection, and comprises the second connector chain of many series connection, and the first connector chain accesses test circuit after connecting with the second connector chain.
In a preferred embodiment, the shape of described the first connector and the second connector is cubic cylinder.And the spacing of adjacent the first metal plug is identical, the spacing of adjacent the second metal plug is also identical, and equals the distance between adjacent the first metal plug and the second metal plug, that is to say, any two adjacent metal plug spacing all equate, all between 0.1 μ m～0.2 μ m.
Because the distance of contact hole bridging test structure contact hole is very little, only has 0.1～0.2 micron, if there is bridging defect, in the time of additional power source, carry out wafer can acceptance test time, the probe of testing equipment contacts with the second weld pad 282 with the first weld pad 272 on contact hole bridging test structure, to be resistance connect into closed circuit by the 295 and second a part of metal plugs (resistance) in connector chain 281 of putting up a bridge to a part of metal plug in the first connector chain 271, test circuit is switched on, and has electric current to pass through.If contact hole bridging test structure is not put up a bridge, test circuit is off state, does not have electric current to pass through.
In sum, the utility model provides the contact hole bridging test structure that a kind of wafer can acceptance test, and the first adjacent metal plug and the spacing of the second metal plug are between 0.1～0.2 μ m.Whether there is electric current to pass through by testing described contact hole bridging test structure, can judge whether tested Semiconductor substrate comes in contact hole bridging defect.
Obviously, foregoing description is only the description to the utility model preferred embodiment, and those skilled in the art can carry out various changes and modification and not depart from spirit and scope of the present utility model the utility model.Like this, if these amendments of the present utility model and within modification belongs to the scope of the utility model claim and equivalent technologies thereof, the utility model is also intended to comprise these changes and modification interior.
Claims (10)
1. a contact hole bridging test structure, is characterized in that, comprising:
Be formed at the insulating medium layer in semi-conductive substrate;
Run through some contact holes of described insulating medium layer;
Be formed at the first metal plug and the second metal plug in described contact hole;
At least one the first connector chain being connected with described the first metal plug and at least one the second connector chain being connected with described the second metal plug, the first adjacent metal plug and the spacing of the second metal plug are between 0.1 μ m～0.2 μ m.
2. contact hole bridging test structure as claimed in claim 1, is characterized in that, also comprises the first weld pad being connected with described the first connector chain and the second weld pad being connected with described the second connector chain.
3. contact hole bridging test structure as claimed in claim 1, is characterized in that, described the first connector chain takes the shape of the letter U, and linearly, described the second connector chain is arranged in described the first connector chain described the second connector chain.
4. contact hole bridging test structure as claimed in claim 1, is characterized in that, described the first connector chain and the second connector chain all twist, and the two mutually around.
5. contact hole bridging test structure as claimed in claim 1, is characterized in that, described the first connector chain and the second connector chain all take the shape of the letter U, and the two interspersed setting.
6. contact hole bridging test structure as claimed in claim 1, is characterized in that, described the first metal plug and the second metal plug are cubic cylinder.
7. contact hole bridging test structure as claimed in claim 1, is characterized in that, the spacing of the first adjacent metal plug is between 0.1 μ m～0.2 μ m.
8. contact hole bridging test structure as claimed in claim 1, is characterized in that, the spacing of the second adjacent metal plug is between 0.1 μ m～0.2 μ m.
9. contact hole bridging test structure as claimed in claim 1, is characterized in that, described the first connector chain is connected with a test circuit with after the second connector chain series connection.
10. contact hole bridging test structure as claimed in claim 1, is characterized in that, described contact hole bridging test structure is formed on the Cutting Road of Semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420103460.2U CN203895444U (en) | 2014-03-07 | 2014-03-07 | Contact hole bridging test structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420103460.2U CN203895444U (en) | 2014-03-07 | 2014-03-07 | Contact hole bridging test structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203895444U true CN203895444U (en) | 2014-10-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420103460.2U Expired - Lifetime CN203895444U (en) | 2014-03-07 | 2014-03-07 | Contact hole bridging test structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203895444U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107346751A (en) * | 2016-05-05 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | Test structure and forming method thereof and method of testing |
| CN110379795A (en) * | 2018-04-12 | 2019-10-25 | 北京同方微电子有限公司 | A kind of test structure permitting Acceptance Tests for chip |
| CN114999953A (en) * | 2022-06-21 | 2022-09-02 | 上海华力集成电路制造有限公司 | WAT electrical property test layout |
-
2014
- 2014-03-07 CN CN201420103460.2U patent/CN203895444U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107346751A (en) * | 2016-05-05 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | Test structure and forming method thereof and method of testing |
| CN107346751B (en) * | 2016-05-05 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | Test structure, forming method thereof and test method |
| CN110379795A (en) * | 2018-04-12 | 2019-10-25 | 北京同方微电子有限公司 | A kind of test structure permitting Acceptance Tests for chip |
| CN114999953A (en) * | 2022-06-21 | 2022-09-02 | 上海华力集成电路制造有限公司 | WAT electrical property test layout |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141022 |