CN103065680A - Programmable level shifter based on phase transition memory cell, and realization method thereof - Google Patents
Programmable level shifter based on phase transition memory cell, and realization method thereof Download PDFInfo
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- CN103065680A CN103065680A CN201110319955XA CN201110319955A CN103065680A CN 103065680 A CN103065680 A CN 103065680A CN 201110319955X A CN201110319955X A CN 201110319955XA CN 201110319955 A CN201110319955 A CN 201110319955A CN 103065680 A CN103065680 A CN 103065680A
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Abstract
The invention discloses a programmable level shifter based on a phase transition memory cell, and a realization method thereof. The programmable level shifter based on the phase transition memory cell comprises a level shifter and two transfer voltage control circuits, wherein the level shifter is connected with the two transfer voltage control circuits in series; the two transfer voltage control circuits control high and low level outputted to a level switching circuit; and the level switching circuit realizes transformation of high and low voltage signals and control of the output level together with the transfer voltage control circuits through inputting signals. The level shifter has high integrated level, a programmable function and continuous adjustable voltages.
Description
Technical field
The present invention relates to a kind of integrated circuit, especially relate to a kind of integrated circuit of the programmable levels converter based on phase-change memory cell.
Background technology
In design of electronic circuits of new generation, along with the introducing of low logic voltage, the inharmonic problem of I/O logic usually appears in internal system, thereby has improved the complicacy of system.For example, when the digital circuit of 1.1V communicates with the mimic channel that is operated in 3.3V, need at first solve the transfer problem of two kinds of level, at this moment just need level translator.
Along with continuing to bring out of the various integrated circuit of different operating voltage, the raising of chip integration, technique is constantly progressive.The necessity of logic level transition is more outstanding, and the level conversion mode also will change with the form of logic voltage, data bus and the difference of message transmission rate.Although now many logic chips can both realize higher logic level to than the conversion of low logic level (as with the 5V level conversion to the 3V level), rarely logic circuit chip lower logic level transition can be become higher logic level (as with the 3V logical transition to the 5V logic).In addition, although level translator also can realize with the combination of transistor even resistance and diode, because being subjected to the impact of stray capacitance, these methods have limited data transfer speed greatly.Although the commercialization of the level translator of wide byte, these devices have larger package dimension, more number of pins and I/O direction controlled pin, thereby are not suitable for the bus of small-sized serial or Peripheral Interface and higher rate.If there is the conversion between a plurality of level, the system complexity that forms with these devices also can be higher.And do not possess able to programme and the high characteristics of integrated level.
A lot of electronic systems continue to shift to lower level voltage signal.This trend power behind is to reducing demand and the increase of microprocessor function and the raising of speed of power consumption.The faster progress of the aspects such as commutating speed and reduction signal noise had both made things convenient for the deviser, had also proposed new challenge to them.Microprocessor is taken the lead in the process that marches to lower voltage levvl.Processor I/O voltage is just transferred to 1.5V from 1.8V, and core voltage can be lower than 1V.Microprocessor of future generation even will adopt lower voltage.Although the voltage of peripheral device component is also reducing, level lags behind about a processor generation usually.The key difficult problem that the development inequality of lower voltage aspect has brought system designer to solve---how between signal level, to change reliably.Correct signal level can guarantee the reliably working of system, and they can prevent that responsive integrated circuit is impaired because of too high or excessively low voltage conditions.But common level translator does not have continuous adjustable and non-volatile programmable characteristics on the changing voltage sheet.
The present invention overcome do not possess programmable functions in the prior art, the discontinuous not high defective of integrated level that is in harmonious proportion of voltage, a kind of programmable levels converter and its implementation based on phase-change memory cell proposed.Integrated level of the present invention is high, and has possessed able to programme, the continuously adjustable function of voltage.The phase-change memory cell of using among the present invention has non-volatile memory function, though power down, the regulated value of the high-low level of setting before still can recording, thus circuit to have a level adjustable continuously, with the CMOS process compatible, non-volatile and programmable characteristics.
Summary of the invention
The present invention proposes a kind of programmable levels converter based on phase-change memory cell, it is characterized in that, described programmable levels converter based on phase-change memory cell comprises level shifting circuit and two changing voltage control circuits, and described level shifting circuit and changing voltage control circuit are connected in series; Described changing voltage control circuit control exports the high-low level of described level shifting circuit to; Described level shifting circuit is realized the conversion of high low voltage signal and the control of output level by input signal and described changing voltage control circuit.
Wherein, described level shifting circuit comprises two nmos pass transistors, two PMOS transistors, phase inverter, low-voltage signal input end and two output terminals.The source electrode of described nmos pass transistor is connected with described changing voltage control circuit, the grid of described nmos pass transistor is connected with described low-voltage signal input end, the grid of described nmos pass transistor is connected with described low-voltage signal input end by described phase inverter, the drain electrode of described nmos pass transistor is connected with described output terminal, and the drain electrode of described nmos pass transistor is connected with described output terminal.The transistorized source electrode of described PMOS is connected with described changing voltage control circuit, and the transistorized drain electrode of described PMOS is connected with described output terminal; The transistorized grid of described PMOS is connected with described output terminal, and the transistorized drain electrode of described PMOS is connected with described output terminal.
Wherein, described changing voltage control circuit comprises phase-change memory cell, nmos pass transistor and signal input part; One end of described phase-change memory cell is connected with power supply, and the other end is connected with the drain electrode of described nmos pass transistor; The source ground of described nmos pass transistor, the drain electrode of described nmos pass transistor is connected with described level shifting circuit, and the grid of described nmos pass transistor is connected with described signal input part.
Wherein, described phase-change memory cell also can be replaced with flash memory (FLASH)/electrically erasable read-only memory storage unit.
Wherein, the material of described phase-change memory cell comprises Ge-Sb-Te, silicon antimony tellurium, aluminium antimony tellurium.
Wherein, described nmos pass transistor can replace with the PMOS transistor.
The present invention also proposes a kind of implementation method of the programmable levels converter based on phase-change memory cell, it is characterized in that, may further comprise the steps:
Step 1 by controlling the grid of the described nmos pass transistor in the described changing voltage control circuit, is regulated the electric current of described phase-change memory cell, controls the size of the resistance value of described phase-change memory cell;
Step 2 is controlled the logical signal of the low-voltage signal input end in the described level shifting circuit, regulates the high-low level output of described output terminal.
Wherein, in the described step 2, in described level shifting circuit, the logical signal of described low-voltage signal input end is 1 o'clock, described nmos pass transistor conducting, described nmos pass transistor cut-off, described PMOS transistor turns, described PMOS transistor cut-off, described output terminal output low level, described output terminal output high level; The logical signal of described low-voltage signal input end is 0 o'clock, described nmos pass transistor cut-off, described nmos pass transistor conducting, described PMOS transistor cut-off, described PMOS transistor turns, described output terminal output high level, described output terminal output low level.
The present invention obtains the target switching levels by the resistance states that changes phase-change memory cell in circuit, it comprises a level shifting circuit and two changing voltage control circuits.Level shifting circuit can realize inputting low voltage signal to the conversion of output HIGH voltage signal.The changing voltage control circuit can be realized the control to the output signal high-low level.The resistance of phase-change memory cell can be regulated by the current impulse that applies different sizes, thereby obtains the adjustable continuously of output high-low level.Phase-change memory cell has non-volatile memory function in addition, though power down, the regulated value of the high-low level of setting before still can recording, thus circuit to have a level adjustable continuously, with the CMOS process compatible, non-volatile and programmable characteristics.
Description of drawings
Fig. 1 is the schematic diagram that the present invention is based on embodiment in the programmable levels converter of phase-change memory cell and its implementation.
Embodiment
In conjunction with following specific embodiments and the drawings, the present invention is described in further detail, and protection content of the present invention is not limited to following examples.Under the spirit and scope that do not deviate from inventive concept, variation and advantage that those skilled in the art can expect all are included in the present invention, and take appending claims as protection domain.
Such as Fig. 1,2-NMOS transistor, 4-nmos pass transistor, 6-PMOS transistor, 8-PMOS transistor, 10-phase inverter, 12-nmos pass transistor, 14-nmos pass transistor, 16-changing voltage control circuit, 18-changing voltage control circuit, 20-level shifting circuit, 24-low-voltage signal input end, the 26-signal input part, 28-signal input part, 30-output terminal, the 32-output terminal, 34-phase-change memory cell, 36-phase-change memory cell, the 38-high-voltage power supply, 39-low-tension supply, 40-ground connection.
The present embodiment provides a kind of realization circuit of the programmable levels converter based on phase-change memory cell.Wherein, the power supply that phase-change memory cell 34,36 connects comprises high-voltage power supply 38 and low-tension supply 39. as shown in Figure 1, the present invention includes 20, two changing voltage control circuits 16 of a level shifting circuit, 18.Level shifting circuit 20 is comprised of nmos pass transistor 2, nmos pass transistor 4, PMOS transistor 6 and PMOS transistor 8.Changing voltage control circuit 18 is comprised of nmos pass transistor 12 and phase-change memory cell 34.One end of phase-change memory cell 34 is connected with the drain electrode of nmos pass transistor 12, and the other end is connected with high-voltage power supply 38.The drain electrode of nmos pass transistor 12 connects the source electrode of PMOS transistor 6,8, the source ground 40 of nmos pass transistor 12, and grid connects signal input part 28.Changing voltage control circuit 16 comprises nmos pass transistor 14, phase-change memory cell 36, signal input part 26.One end of phase-change memory cell 36 connects the drain electrode of nmos pass transistor 14, and the other end connects low-tension supply 39, and the drain electrode of nmos pass transistor 14 and nmos pass transistor 2,4 source electrode are connected, source ground 40, and grid is connected with input signal 26.The output terminal that low-voltage signal input end 24 is input to the grid of transistor 2 and phase inverter 10,10 is connected to the grid of transistor 4.The power supply of phase inverter 10 is low-tension supply.The drain electrode of transistor 4 is connected to the grid of PMOS transistor 8 and drain electrode and the output terminal 32 of PMOS transistor 6, and the drain electrode of nmos pass transistor 2 is connected to the grid of PMOS transistor 6 and drain electrode and the output terminal 30 of PMOS transistor 8.The source electrode that the source electrode of PMOS transistor 6 is connected with the PMOS transistor connects.The source electrode of nmos pass transistor 4 connects the source electrode of nmos pass transistor 2.Formed by phase-change memory cell and NMOSNMOS transistor for transforming voltage control circuit 18 and 16, by the control resistance value of phase-changing memory unit and nmos pass transistor 12,14 gate voltage, changing voltage control circuit 16,18 can reach nmos pass transistor 2,4,6,8 forward voltage, and then control output end 30,32 voltage.Phase-change memory cell also can be replaced with flash memory (FLASH)/electrically erasable read-only memory storage unit, realizes identical function.
The state of each key node and element among embodiment when table 1 has been concluded above-mentioned duty.As shown in table 1, the logical signal " 1 " of inputting low pressure when low-voltage signal input end 24 makes nmos pass transistor 2 conductings, nmos pass transistor 4 cut-offs, output terminal 30 output low levels then, its magnitude of voltage is subjected to 16 controls of changing voltage control circuit, and the low level of output makes 6 conductings of PMOS transistor, output terminal 32 output high level, its magnitude of voltage is subjected to 18 controls of changing voltage control circuit, PMOS transistor 8 cut-offs this moment.The logical signal " 0 " of inputting when low-voltage signal input end 24 makes nmos pass transistor 2 cut-offs.Through behind the phase inverter 10, make nmos pass transistor 4 conductings, output terminal 32 output low levels then, its magnitude of voltage is subjected to 16 controls of changing voltage control circuit, the low level of output makes 8 conductings of PMOS transistor, output terminal 30 output high level, its magnitude of voltage is subjected to 18 controls of changing voltage control circuit, PMOS transistor 6 cut-offs this moment.Output terminal 30,32 high level are that the resistance dividing potential drop by the resistance of phase-change memory cell 34 and transistor 12 determines.The input signal of signal input part 28 can be regulated the conducting state of nmos pass transistor 12, and same output terminal 30,32 low level are determined by phase-change memory cell 36 and nmos pass transistor 14.
Phase-change memory cell 34,36 has programmable function in the changing voltage control circuit 16,18, programming for phase-change memory cell 34, can realize by the grid of control nmos pass transistor 12, namely give a pulse signal and control program current by phase-change memory cell, and then control the size of its programming resistors value.For the programming of phase-change memory cell 36, can realize by the grid of control nmos pass transistor 14, namely give a pulse signal and control by phase-change memory cell and come program current, and then control the size of its programming resistors value.During programming, level shifting circuit 16,20 does not have DC channel, and low-voltage signal input end 24 can be 0 also can be 1.Because the characteristic of phase-change material, phase-change memory cell 34,36 has the ability of repeatedly programming and preserving resistance states, be that output terminal 30,32 output high-low level can require programme according to difference difference constantly, and its programming resistors value still can be saved behind system power failure.
Claims (8)
1. programmable levels converter based on phase-change memory cell, it is characterized in that, described programmable levels converter based on phase-change memory cell comprises level shifting circuit (20) and two changing voltage control circuits (16,18), and described level shifting circuit (20) is connected in series with changing voltage control circuit (16,18); Described changing voltage control circuit (16,18) control exports the high-low level of described level shifting circuit (20) to; Described level shifting circuit (20) is realized the conversion of high low voltage signal and the control of output level by input signal and described changing voltage control circuit (16,18).
2. as claimed in claim 1 based on the programmable levels converter of phase-change memory cell, it is characterized in that, described level shifting circuit (20) comprises two nmos pass transistors (2,4), two PMOS transistors (6,8), phase inverter (10), low-voltage signal input end (24) and two output terminals (30,32);
The source electrode of described nmos pass transistor (2,4) is connected with described changing voltage control circuit (16), the grid of described nmos pass transistor (2) is connected with described low-voltage signal input end (24), the grid of described nmos pass transistor (4) is connected with described low-voltage signal input end (24) by described phase inverter (10), the drain electrode of described nmos pass transistor (2) is connected with described output terminal (30), and the drain electrode of described nmos pass transistor (4) is connected with described output terminal (32);
The source electrode of described PMOS transistor (6,8) is connected with described changing voltage control circuit (18), and the grid of described PMOS transistor (6) is connected with described output terminal (30), and the drain electrode of described PMOS transistor (6) is connected with described output terminal (32); The grid of described PMOS transistor (8) is connected with described output terminal (32), and the drain electrode of described PMOS transistor (8) is connected with described output terminal (30).
3. as claimed in claim 1 based on the programmable levels converter of phase-change memory cell, it is characterized in that, described changing voltage control circuit (16,18) comprises phase-change memory cell (36,34), nmos pass transistor (14,12) and signal input part (26,28); One end of described phase-change memory cell (36,34) is connected with power supply, and the other end is connected with the drain electrode of described nmos pass transistor (14,12); The source ground of described nmos pass transistor (14,12), the drain electrode of described nmos pass transistor (14,12) is connected with described level shifting circuit (20), and the grid of described nmos pass transistor (14,12) is connected with described signal input part (26,28).
4. as claimed in claim 3 based on the programmable levels converter of phase-change memory cell, it is characterized in that, described phase-change memory cell (36,34) also can be replaced with flash memory, electrically erasable read-only memory storage unit.
5. as claimed in claim 3 based on the programmable levels converter of phase-change memory cell, it is characterized in that, the material of described phase-change memory cell (36,34) comprises Ge-Sb-Te, silicon antimony tellurium, aluminium antimony tellurium.
6. the programmable levels converter based on phase-change memory cell as claimed in claim 3 is characterized in that, described nmos pass transistor (12,14) also can be used the PMOS transistor.
7. such as the implementation method of the described programmable levels converter based on phase-change memory cell of each claim among the claim 1-6, it is characterized in that, may further comprise the steps:
Step 1, by controlling the grid of the described nmos pass transistor (12,14) in the described changing voltage control circuit (16,18), regulate the electric current of described phase-change memory cell (34,36), control the size of the resistance value of described phase-change memory cell (34,36);
Step 2 is controlled the logical signal of the low-voltage signal input end (24) in the described level shifting circuit (20), regulates the high-low level output of described output terminal (30,32).
8. as claimed in claim 7 based on the implementation method of the programmable levels converter of phase-change memory cell, it is characterized in that, in the described step 2, in described level shifting circuit (20), the logical signal of described low-voltage signal input end (24) is 1 o'clock, described nmos pass transistor (2) conducting, described nmos pass transistor (4) cut-off, described PMOS transistor (6) conducting, described PMOS transistor (8) cut-off, described output terminal (30) output low level, described output terminal (32) output high level; The logical signal of described low-voltage signal input end (24) is 0 o'clock, described nmos pass transistor (2) cut-off, described nmos pass transistor (4) conducting, described PMOS transistor (6) cut-off, described PMOS transistor (8) conducting, described output terminal (30) output high level, described output terminal (32) output low level.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325096A (en) * | 2000-03-14 | 2001-12-05 | 株式会社半导体能源研究所 | Level moving device |
| CN1499724A (en) * | 2002-10-30 | 2004-05-26 | 松下电器产业株式会社 | level conversion circuit |
| US20060022709A1 (en) * | 2004-07-30 | 2006-02-02 | Meng-Jer Wey | Level shifter for wide range operation |
| US20060028244A1 (en) * | 2004-08-06 | 2006-02-09 | Chih-Hung Wu | Programmable level shifter for wide range operation purpose |
| CN101409549A (en) * | 2007-10-12 | 2009-04-15 | 联发科技股份有限公司 | Level shifter and related input/output buffer |
| US20110134710A1 (en) * | 2009-12-04 | 2011-06-09 | Fuji Electric Systems Co., Ltd. | Level shift circuit |
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- 2011-10-20 CN CN201110319955XA patent/CN103065680A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325096A (en) * | 2000-03-14 | 2001-12-05 | 株式会社半导体能源研究所 | Level moving device |
| CN1499724A (en) * | 2002-10-30 | 2004-05-26 | 松下电器产业株式会社 | level conversion circuit |
| US20060022709A1 (en) * | 2004-07-30 | 2006-02-02 | Meng-Jer Wey | Level shifter for wide range operation |
| US20060028244A1 (en) * | 2004-08-06 | 2006-02-09 | Chih-Hung Wu | Programmable level shifter for wide range operation purpose |
| CN101409549A (en) * | 2007-10-12 | 2009-04-15 | 联发科技股份有限公司 | Level shifter and related input/output buffer |
| US20110134710A1 (en) * | 2009-12-04 | 2011-06-09 | Fuji Electric Systems Co., Ltd. | Level shift circuit |
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Application publication date: 20130424 |