CN102980159A - Heat dissipation device and manufacture method thereof and light-emitting diode (LED) light source provided with the same - Google Patents

Abstract

The invention discloses a heat dissipation device, a manufacturing method of the heat dissipation device and an LED light source provided with the heat dissipation device. The heat dissipation device is used for dissipating heat from an LED chip. One side of the thermally conductive substrate is in thermal contact, and the porous structure layer is in thermal contact with the other side of the first thermally conductive substrate. Through the above method, the heat dissipation device of the present invention has an excellent heat dissipation effect.

Description

Heat sink, manufacturing method of heat sink, and LED light source with same

technical field

The invention relates to a semiconductor device, in particular to a heat dissipation device, a manufacturing method of the heat dissipation device and an LED light source with the heat dissipation device.

Background technique

Because light-emitting diodes have the advantages of low power consumption, low heat generation, and long life; therefore, in the fields of electronic display and lighting, light-emitting diodes are gradually replacing traditional lighting fixtures with high energy consumption and short life.

The existing light-emitting diode light source includes a light-emitting chip and a heat-conducting substrate, and the light-emitting chip is arranged on the heat-conducting substrate. When light-emitting chips perform predetermined work, they usually generate a lot of heat; this heat needs to be dissipated through a thermally conductive substrate. If the heat cannot be effectively dissipated, it will affect the normal operation of the LED light source.

Contents of the invention

The technical problem mainly solved by the present invention is to provide a heat dissipation device with improved heat dissipation effect, a manufacturing method of the heat dissipation device and an LED light source with the heat dissipation device.

In order to solve the above-mentioned technical problems, a technical solution adopted by the present invention is to provide a heat dissipation device for dissipating heat from the LED chip, the heat dissipation device includes a first heat-conducting substrate and a porous structure layer, and a part of the LED chip and the first heat-conducting substrate One side is in thermal contact, and the porous structure layer is in thermal contact with the other side of the first heat-conducting substrate.

Wherein, the side areas of the porous structure layer and the first heat-conducting substrate are larger than the side areas of the LED chip.

Wherein, the porous structure layer is directly formed on the other side of the first heat conducting substrate.

Wherein, the heat dissipation device further includes a second heat conduction substrate, the porous structure layer is formed on one side of the second heat conduction substrate, and the other side of the second heat conduction substrate is in thermal contact with the other side of the first heat conduction substrate.

Wherein, the side area of the second heat conduction substrate and the porous structure layer is larger than the side area of the first heat conduction substrate.

Wherein, the heat dissipation device further includes a heat conduction film layer formed on the first heat conduction substrate, the thermal conductivity of the heat conduction film layer is greater than that of the first heat conduction substrate, the heat conduction film layer is in thermal contact with the LED chip, and the side area of the heat conduction film layer is larger than that of the LED chip side area.

Wherein, the porous structure layer includes porous polymer material and infrared heat radiation powder doped in the porous polymer material, or includes foamed cement material and infrared radiation powder mixed in the foamed cement material.

Wherein, the porous polymer material includes at least one of porous ink, porous colloid, and porous plastic, and the infrared heat radiation powder includes graphite, alumina, white carbon black, zircon sand, silicon dioxide, cobalt oxide, magnesium oxide, At least one of manganese oxide, nickel oxide, titanium oxide, copper oxide, chromium oxide, iron oxide, molybdenum oxide, and silicon carbide.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide an LED light source, which includes an LED chip and the heat dissipation device as described above.

In order to solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a method for manufacturing a heat sink, which includes: providing a first heat-conducting substrate; A certain proportion is evenly mixed to form a paste mixture; the paste mixture is coated on the first heat conduction substrate; and the paste mixture coated on the first heat conduction substrate is baked to form a porous structure layer.

The beneficial effects of the present invention are: different from the situation of the prior art, the heat dissipation device of the present invention includes a first heat conduction substrate and a porous structure layer in thermal contact with one side of the first heat conduction substrate; A heat dissipation method - radiation heat dissipation, which increases the surface area of the heat dissipation device and enhances the heat conduction efficiency of the heat dissipation device; the special structure of the porous structure layer can also improve the heat convection efficiency of the heat dissipation device; in addition, the porous structure layer produces The siphon effect can absorb the moisture in the air into the gap, and the heat of the heat flow will evaporate the moisture in the gap, and then make the water vapor dissipate into the surrounding air, thereby further enhancing the heat dissipation effect of the heat sink.

Description of drawings

Fig. 1 is the schematic diagram of the first embodiment of the LED light source of the present invention;

Fig. 2 is a schematic diagram of a second embodiment of the LED light source of the present invention.

Fig. 3 is a flow chart of the manufacturing method of the heat sink of the present invention.

Detailed ways

Referring to FIG. 1 , an LED light source 100 according to the first embodiment of the present invention includes a heat sink 1 and a LED (Light Emitting Diode) chip 2 . The heat dissipation device 1 includes a heat conduction substrate 10 , a porous structure layer 11 and a heat conduction film layer 12 .

The LED chip 2 , the heat-conducting film layer 12 , the heat-conducting substrate 10 and the porous structure layer 11 are sequentially stacked along the first direction X. The heat-conducting substrate 10 is roughly flat and includes a first side 101 and a second side 102 opposite to the first side 101 . The first side 101 and the second side 102 extend along a second direction Y perpendicular to the first direction X.

The thermally conductive substrate 10 is a composite layer formed of one or more materials among ceramics, metals or high thermally conductive plastics. Ceramics, such as alumina, aluminum nitride, etc., metals, such as copper, aluminum, silver, etc. That is, the heat dissipation device is suitable for traditional PCB (Printed Circuit Board, printed circuit board), MCPCB (metal core PCB, metal core printed circuit board), DBC (Dircet Bonding Copper, copper clad ceramic substrate), ceramic packaging substrate, composite substrate, etc. .

The thermally conductive film layer 12 is formed on the first side 101 of the thermally conductive substrate 10 , and the thermal conductivity of the thermally conductive film layer 12 is greater than that of the thermally conductive substrate 10 . Preferably, the heat-conducting film layer 12 is a diamond-like coating. In practical applications, the heat-conducting film layer 12 can also be a metal film such as silver, aluminum, copper, etc., a diamond film or a ceramic film such as aluminum nitride.

The LED chip 2 is disposed on the heat-conducting film layer 12 , is in thermal contact with the heat-conducting film layer 12 and is in thermal contact with the first side 101 of the heat-conducting substrate 10 through the heat-conducting film layer 12 .

The porous structure layer 11 is in thermal contact with the second side 102 of the thermally conductive substrate 10 . In this embodiment, the porous structure layer 11 is directly formed on the second side 102 of the thermally conductive substrate 10 . The porous structure layer 11 includes porous polymer material and infrared heat radiation powder doped in the porous polymer material, foamed cement material and infrared radiation powder mixed in the foamed cement material. Wherein, the porous polymer material includes at least one of porous ink, porous colloid, and porous plastic; the infrared radiation powder includes graphite, alumina, white carbon black, zircon sand, silicon dioxide, cobalt oxide, magnesium oxide, One or a combination of manganese, nickel oxide, titanium oxide, copper oxide, chromium oxide, iron oxide, molybdenum oxide, and silicon carbide.

Since the LED chip 2 , the heat-conducting film layer 12 , the heat-conducting substrate 10 , and the porous structure layer 11 are stacked along the first direction X, and the above-mentioned components are generally in the shape of a sheet or a plate. For the convenience of description, the surface of the above-mentioned components along the second direction Y is specifically defined as a side, where the side includes the first side 101 and the second side 102 of the thermally conductive substrate 10 .

In order to achieve a better heat dissipation effect, the side areas of the heat-conducting film layer 12 , the heat-conducting substrate 10 and the porous structure layer 11 are all larger than the side areas of the LED chip 2 . In this embodiment, since the heat-conducting film layer 12 and the porous structure layer 11 are directly formed on the first side 101 and the second side 102 of the heat-conducting substrate 10 respectively, the side area of the heat-conducting substrate 10 is greater than or equal to that of the heat-conducting film layer 12. Or the lateral area of the porous structure 11.

Please refer to FIG. 2, the LED light source 100' of the second embodiment of the present invention includes a heat sink 1' and a LED (Light Emitting Diode) chip 2. The heat dissipation device 1' includes a heat conduction film layer 12', a first heat conduction substrate 10', a second heat conduction substrate 13 and a porous structure layer 11' stacked in sequence along the first direction X. The first heat-conducting substrate 10' includes a first side 101' and a second side 102' extending along the second direction Y. The second heat-conducting substrate 13 includes a first side 131 and a second side 132 extending along the second direction Y.

Compared with the LED light source 100 of the first embodiment, the porous structure layer 11 ′ of the LED light source 100 ′ of this embodiment is formed on the second side 132 of the second heat-conducting substrate 13 , and the heat-conducting film layer 12 ′ is formed on the first heat-conducting substrate 10 On the first side 101' of ', the first side 131 of the second heat-conducting substrate 13 is in thermal contact with the second side 102' of the first heat-conducting substrate 10'.

In order to achieve a better heat dissipation effect, the side area of the second heat conduction substrate 13 and the porous structure layer 11' is set larger than the side area of the first heat conduction substrate 10'.

Compared with the prior art, the heat dissipation device 1, 1' of the LED light source 100, 100' of the present invention includes a first heat conduction substrate 10, 10' and a porous structure layer 11, 11' in thermal contact with one side of the first heat conduction substrate The porous structure of the porous structure layer 11, 11' has one more heat dissipation method than the previous heat dissipation substrate - radiation heat dissipation, and at the same time the surface area of the heat dissipation device is increased, so the heat conduction efficiency of the heat dissipation device is improved; the porous structure layer 11 The porous structure of , 11' can also improve the heat convection efficiency of the heat sink; in addition, the siphon effect produced by the porous structure layer 11, 11' can absorb the moisture in the air into the gap, and the heat of the heat flow will evaporate the moisture in the gap , and then make the water vapor dissipate into the surrounding air, thereby further enhancing the heat dissipation effect of the heat dissipation device.

The present invention further provides a heat dissipation device 1 or 1' as described above. The specific structure of the heat dissipation device has been described in detail in the LED light source, and will not be repeated here.

Please refer to FIG. 3 together. The present invention also provides a method for manufacturing a heat sink. The method includes:

S1, providing a thermally conductive substrate.

The thermally conductive substrate 10 is a composite layer formed of one or more materials among ceramics, metals or high thermally conductive plastics. That is, the heat dissipation device is suitable for traditional PCB (Printed Circuit Board, printed circuit board), MCPCB (metal core PCB, metal core printed circuit board), DBC (Dircet Bonding Copper, copper clad ceramic substrate), ceramic packaging substrate, composite substrate, etc. .

S2, uniformly mixing the porous polymer material, the infrared heat radiation powder and the diluent according to a certain proportion to form a paste mixture.

In step S2, the porous polymer material includes at least one of porous ink, porous colloid, and porous plastic; the infrared radiation powder includes one or a combination of graphite powder and alumina powder. The diluent is preferably an organic solvent.

S3, coating the paste mixture on the thermally conductive substrate.

The paste mixture is evenly coated on one side of the thermally conductive substrate by means of spraying, dipping or printing, so that one side of the thermally conductive substrate forms a mixture layer.

S4, baking the paste mixture coated on the thermally conductive substrate to form a porous structure layer.

The heat dissipation device manufactured by the above manufacturing method can be used directly, or can be used as a heat dissipation device after being formed on the other side of the heat conduction substrate or thermally connected with a heat conduction thin film layer. The present invention is not limited thereto.

The above is only the embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process conversion made by using the description of the present invention and the contents of the accompanying drawings, or directly or indirectly used in other related technologies fields, all of which are equally included in the scope of patent protection of the present invention.

Claims (10)

1. A heat dissipation device for dissipating heat from an LED chip, characterized in that the heat dissipation device comprises a first heat conduction substrate and a porous structure layer, the LED chip is in thermal contact with one side of the first heat conduction substrate, The porous structure layer is in thermal contact with the other side of the first thermally conductive substrate. 2 . The heat dissipation device according to claim 1 , wherein the side areas of the porous structure layer and the first heat conducting substrate are larger than the side areas of the LED chip. 3 . 3. The heat dissipation device according to claim 2, wherein the porous structure layer is directly formed on the other side of the first heat conducting substrate. 4. The heat dissipation device according to claim 2, wherein the heat dissipation device further comprises a second heat conduction substrate, the porous structure layer is formed on one side of the second heat conduction substrate, and the second heat conduction substrate The other side of the substrate is in thermal contact with the other side of the first thermally conductive substrate. 5 . The heat dissipation device according to claim 4 , wherein the side areas of the second heat conduction substrate and the porous structure layer are larger than the side surfaces of the first heat conduction substrate. 6. The heat dissipation device according to claim 2, characterized in that, the heat dissipation device further comprises a heat conduction film layer formed on the first heat conduction substrate, and the thermal conductivity of the heat conduction film layer is greater than that of the first heat conduction film layer. The substrate, the heat-conducting film layer is in thermal contact with the LED chip, and the side area of the heat-conducting film layer is larger than the side area of the LED chip. 7. The heat dissipation device according to claim 1, wherein the porous structure layer comprises porous polymer material and infrared heat radiation powder doped in the porous polymer material, or comprises foamed cement material and Infrared radiation powder mixed in foamed cement material. 8. The heat dissipation device according to claim 7, wherein the porous polymer material comprises at least one of porous ink, porous colloid and porous plastic, and the infrared heat radiation powder comprises graphite, aluminum oxide, white At least one of carbon black, zircon sand, silicon dioxide, cobalt oxide, magnesium oxide, manganese dioxide, nickel oxide, titanium oxide, copper oxide, chromium oxide, iron oxide, molybdenum oxide, and silicon carbide. 9. An LED light source, characterized in that the LED light source comprises an LED chip and the heat dissipation device according to any one of claims 1-8. 10. A manufacturing method of a heat sink, characterized in that the manufacturing method comprises: Provide a thermally conductive substrate; Mix the porous polymer material, infrared heat radiation powder and diluent uniformly in a certain proportion to form a paste mixture; coating the paste mixture on the first thermally conductive substrate; The paste mixture coated on the thermally conductive substrate is baked to form a porous structure layer.

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