CN102790613B - Switching sensor - Google Patents
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- CN102790613B CN102790613B CN201110125153.5A CN201110125153A CN102790613B CN 102790613 B CN102790613 B CN 102790613B CN 201110125153 A CN201110125153 A CN 201110125153A CN 102790613 B CN102790613 B CN 102790613B
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- 239000003302 ferromagnetic material Substances 0.000 abstract description 11
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- 230000004044 response Effects 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000003044 adaptive effect Effects 0.000 abstract 1
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- 230000000694 effects Effects 0.000 description 9
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- 230000008878 coupling Effects 0.000 description 3
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- 238000005265 energy consumption Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
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- 230000005764 inhibitory process Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
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Abstract
The invention discloses a switching sensor, comprising a magneto-resistor element and an ASIC chip. The magneto-resistor element is adaptive with the ASIC chip and is connected on the ASIC chip. The magneto-resistor element is a sensing element and/or a reference element. The sensing element and the reference element are formed by one or a plurality of MTJ (magnetic tunnel junction) magneto-resistor elements connected in series. The switching sensor using the MTJ magneto-resistor elements as sensitive elements to induce close ferromagnetic materials is characterized by low power consumption and high sensitivity. Beneficial effects of using the technical scheme are high sensitivity, low power consumption, high response frequency, and small size.
Description
Technical field
The present invention relates to a kind of switchgear, a kind of switch sensor of specific design.
Background technology
Magnetic switch sensor is widely used in consumer electronics, white domestic appliances, three tables (ammeter, water meter, gas meter), automobile and industry, and the magnetic switch sensor of current main flow has Hall element and AMR(anisotropic magnetoresistive) sensor.In consumer electronics and three table applications, the power consumption of honeywell switch sensor and AMR switch sensor can reach several microamperes, and obtain when this is and sacrifices its operating frequency, its operating frequency is tens hertz, and its switching point is tens Gausses; Need the environment of high operate frequency in automobile, commercial Application etc., the power consumption of honeywell switch sensor and AMR switch sensor is milliampere level, and its operating frequency is KHz level.
MTJ(MTJ) element is the Novel magnetic power inhibition effect sensor starting commercial Application in recent years, what its utilized is the tunneling magnetoresistance of Researches for Magnetic Multilayer Films, be mainly manifested in the change along with external magnetic field size and Orientation in Researches for Magnetic Multilayer Films, the resistance generation significant change of magnetoresistance effect.In low-power consumption applications such as consumer electronics and three tables, the switch sensor being sensing element with MTJ element is in operating frequency for power consumption during KHz is microampere order, and switching point is tens Gausses; Need the environment of high operate frequency in automobile, commercial Application etc., the operating frequency of MTJ switch sensor can reach megahertz, and power consumption is only a microampere rank.
Due to existing switch sensor dormancy or duty power consumption all higher, and operating frequency is low, needs a kind of high sensitivity for this reason, no matter dormancy or duty low in energy consumption, response frequency is high, the switch sensor that volume is little.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of high sensitivity, low-power consumption, response frequency is high, and volume is little, the switch sensor of good temp characteristic, utilize MTJ element to respond to close ferromagnetic material for sensing element, there is low-power consumption and highly sensitive characteristic.
For achieving the above object, technical scheme of the present invention is as follows: a kind of switch sensor, comprise magnetoresistive element and asic chip, described magnetoresistive element and described asic chip suitable, and described magnetoresistive element is connected on described asic chip, described magnetoresistive element is sensing element and/or reference element, and described sensing element and described reference element are composed in series for one or more MTJ magnetoresistive element.
Preferably, described MTJ magnetoresistive element comprises pinning layer, magnetic nailed layer, nonmagnetic oxide layer and free magnetic layer, the free magnetic layer magnetic moment direction of described sensing element is vertical with magnetic nailed layer magnetic moment direction or at an angle, the magnetic moment direction of the free magnetic layer of described reference element is parallel with the magnetic moment direction of magnetic nailed layer.
Preferably, described magnetoresistive element is one, two or four.
Preferably, a described magnetoresistive element is sensing element.
Preferably, described two magnetoresistive elements are two sensing elements or a sensing element and a reference element, and described two magnetoresistive elements are half-bridge connects.
Preferably, described four magnetoresistive elements are two sensing elements and two reference elements of four sensing elements or spaced setting, and described four magnetoresistive elements are full-bridge connection.
The present invention utilizes MTJ electromagnetism resistance element to respond to close ferromagnetic material for sensing element, has low-power consumption and highly sensitive characteristic.Adopt the beneficial effect of the technical program to be: high sensitivity, no matter dormancy or duty low in energy consumption, response frequency is high, and volume is little.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in embodiment of the present invention technology, be briefly described to the accompanying drawing used required in the description of embodiment technology below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is MTJ magnetic tunnel junction structure schematic diagram;
Fig. 2 is MTJ magnetic tunnel-junction magneto-resistor output characteristics schematic diagram;
Fig. 3 is the schematic diagram of a kind of embodiment of the present invention;
Fig. 4 is the schematic diagram of a kind of embodiment of the present invention;
Fig. 5 is the schematic diagram of a kind of embodiment of the present invention;
Fig. 6 is the schematic diagram of a kind of embodiment of the present invention;
Fig. 7 is the schematic diagram of a kind of embodiment of the present invention;
Fig. 8 is the schematic diagram of a kind of embodiment of the present invention;
Fig. 9 is the schematic diagram of a kind of embodiment of the present invention;
Figure 10 is the output signal schematic diagram of half-bridge circuit and single resistance constant-current circuit;
Figure 11 is the output signal schematic diagram of full-bridge circuit;
Figure 12 is that one pole opens the light signal schematic representation;
Figure 13 is latch switch signal schematic representation;
Figure 14 is full pole switching signal schematic diagram.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, the structure of MTJ magnetic tunnel-junction is made up of nano-scale multilayer film: pinning layer 1, magnetic nailed layer 2, nonmagnetic oxide layer 3, free magnetic layer 4.The magnetic moment direction 5 of magnetic nailed layer 2 and the magnetic moment direction 6 of free magnetic layer 4 are mutually vertical or at an angle.The magnetic moment direction 6 of free magnetic layer 4 changes along with the change of the size and Orientation of externally-applied magnetic field 7.The operation principle of MTJ magnetic tunnel-junction is, the magnetic resistance of MTJ changes along with magnetic moment direction 6 and the change of the angle of the magnetic moment direction 5 of magnetic nailed layer 2 of free magnetic layer 4.When the magnetic moment direction 6 of free magnetic layer 4 changes along with the change of the size and Orientation of externally-applied magnetic field 7, the magnetic resistance of tunnel knot MTJ also changes thereupon.
As shown in Figure 2, when the direction of externally-applied magnetic field 7 and the magnetic moment direction 5 of nailed layer 2 parallel time, when the intensity of externally-applied magnetic field is greater than H1 simultaneously, the magnetic moment direction of free magnetic layer 4 is parallel with the direction of externally-applied magnetic field 7, and then parallel with the magnetic moment direction 5 of magnetic nailed layer 2, at this moment the magnetic resistance of tunnel knot MTJ is minimum.When magnetic moment direction 5 antiparallel of the direction of externally-applied magnetic field 7 and nailed layer 2, when the intensity of externally-applied magnetic field is greater than H2 simultaneously, the magnetic moment direction of free magnetic layer 4 and the direction antiparallel of externally-applied magnetic field 7, and then with magnetic moment direction 5 antiparallel of magnetic nailed layer 2, at this moment the magnetic resistance of tunnel knot MTJ is maximum.Magnetic field range between H1 and H2 is exactly the measurement category of MTJ.
The present invention is biased in the following ways or with the magnetic moment direction of the combination of under type to free magnetic layer, make the magnetic moment direction of free magnetic layer vertical with the magnetic moment direction of magnetic nailed layer or at an angle: to deposit one deck inverse ferric magnetosphere on free magnetic layer upper strata or lower floor, utilize the magnetic moment direction of spin-exchange-coupled to free magnetic layer of itself and magnetic free interlayer to be biased; Be biased by the magnetic moment direction of Nai Er coupling to free magnetic layer between free magnetic layer and magnetic nailed layer; Integratedly on a sensor arrange one for by current line biased for free magnetic layer magnetic moment direction, this current line sense of current is identical with magnetic nailed layer magnetic moment direction; Permanent magnet free magnetic layer magnetic moment direction being carried out being biased is set on a sensor.
Embodiment 1
As shown in Figure 3, a kind of embodiment of the present invention, one recommends half-bridge MTJ switch sensor, close ferromagnetic material is responded to, comprise two magnetoresistive elements and the asic chip 13 suitable with it, two magnetoresistive element half-bridges connect, and two magnetoresistive elements are two sensing elements 11,12.Two sensing elements 11,12 are composed in series by one or more MTJ magnetoresistive element.MTJ magnetoresistive element is magnetic nano-multilayer film structure, comprises free magnetic layer and magnetic nailed layer, and the magnetic moment direction of the free magnetic layer of two sensing elements is respectively 121 and 122, and magnetic moment direction 121 is parallel on the contrary with the direction of 122; The magnetic moment direction of the magnetic nailed layer of two MTJ magnetoresistive elements is respectively 111 and 112, and magnetic moment direction 111 is parallel on the contrary with the direction of 112; The magnetic moment direction of the free magnetic layer of each sensing element is vertical with its magnetic nailed layer magnetic moment direction, magnetic moment direction 111 is vertical with magnetic moment direction 121, magnetic moment direction 112 is vertical with magnetic moment direction 122, and the sensitive direction 7 of recommending half-bridge is parallel with the nailed layer magnetic moment direction of two sensing elements.When having externally-applied magnetic field along the sensitive direction 7 of recommending half-bridge, the free magnetic layer magnetic moment direction of a sensing element can trend towards antiparallel magnetic nailed layer magnetic moment direction, its resistance can decrease, the free magnetic layer magnetic moment direction of another sensing element can trend towards antiparallel magnetic nailed layer magnetic moment direction, its resistance can increase, thus causes the output V recommending half-bridge
oUTchange, its curve of output is as shown in Figure 10.
The effect of the asic chip 13 suitable with recommending half-bridge circuit is for chip provides constant voltage V
dD, the output signal of electric bridge is converted into switching signal simultaneously, the single-pole switch signal as Figure 12, the latch switch signal as Figure 13, pole as complete in Figure 14 switching signal can be exported according to demand.
Embodiment 2
As shown in Figure 4, a kind of embodiment of the present invention, another kind recommends half-bridge MTJ switch sensor, close ferromagnetic material is responded to, comprise two magnetoresistive elements and the asic chip 13 suitable with it, two magnetoresistive element half-bridges connect, and two magnetoresistive elements are two sensing elements 11,12.Two sensing elements 11,12 are composed in series by one or more MTJ magnetoresistive element.MTJ magnetoresistive element is magnetic nano-multilayer film structure, comprise free magnetic layer and magnetic nailed layer, the nailed layer magnetic moment direction 111 of two sensing elements is identical with 112, free magnetic layer magnetic moment direction and the magnetic nailed layer magnetic moment direction of each sensing element are an acute angle, magnetic moment direction 111 and magnetic moment direction 121 are in an acute angle, magnetic moment direction 112 and magnetic moment direction 122 are in an acute angle, and each MTJ magnetoresistive element free layer magnetic moment direction is identical with the angle of nailed layer magnetic moment direction, free layer magnetic moment direction 121 and 122 is different, the sensitive direction 7 of recommending half-bridge is vertical with two sensing element nailed layer magnetic moment direction.When having externally-applied magnetic field along the sensitive direction 7 of recommending half-bridge, the free magnetic layer magnetic moment direction of a sensing element can trend towards antiparallel magnetic nailed layer magnetic moment direction, its resistance can decrease, the free magnetic layer magnetic moment direction of another sensing element can trend towards antiparallel magnetic nailed layer magnetic moment direction, its resistance can increase, thus causes the output V recommending half-bridge
oUTchange, its curve of output is as shown in Figure 10.
The effect of the asic chip 13 suitable with recommending half-bridge circuit is for chip provides constant voltage V
dD, the output signal of electric bridge is converted into switching signal simultaneously, the single-pole switch signal as Figure 12, the latch switch signal as Figure 13, pole as complete in Figure 14 switching signal can be exported according to demand.
Embodiment 3
As shown in Figure 5, a kind of embodiment of the present invention, a kind of with reference to half-bridge MTJ switch sensor, close ferromagnetic material is responded to, it comprises two magnetoresistive elements and the asic chip 23 suitable with it, two magnetoresistive element half-bridges connect, and two magnetoresistive elements are a sensing element 21 and a reference element 22.Sensing element 21 and reference element 22 are composed in series by one or more MTJ magnetoresistive element.MTJ magnetoresistive element is magnetic nano-multilayer film structure, comprises free magnetic layer and magnetic nailed layer.The free magnetic layer magnetic moment direction 221 of sensing element is vertical with magnetic nailed layer magnetic moment direction 211.Sensitive direction 7 with reference to half-bridge is parallel with nailed layer magnetic moment direction 211.When having externally-applied magnetic field along the sensitive direction 7 with reference to half-bridge, the free magnetic layer magnetic moment direction 221 of sensing element 21 can trend towards parallel or antiparallel magnetic nailed layer magnetic moment direction 211, its resistance can decrease or raise, thus causes the output V with reference to half-bridge
oUTchange, its typical output curve is as shown in Figure 10.
Because magnetoresistive element 22 is reference element, the magnetic moment direction of its free magnetic layer is parallel with the magnetic moment direction of magnetic nailed layer, can by the following method or the combination of following several method reduce its sensitivity: screen layer can be set on its surface, screen layer is the soft magnetic materials of high magnetic permeability, reduces its susceptibility; Inverse ferric magnetosphere or magnetic layer can be deposited on its free layer upper strata or lower floor, utilize the end of a performance coupling of the spin-exchange-coupled of inverse ferric magnetosphere and free layer or magnetic layer and free layer to be biased its free layer magnetic moment, reduce its susceptibility; Can arrange permanent magnet in its both sides, permanent magnet is biased its free layer magnetic moment, reduces its susceptibility; By long and narrow in sensing element with reference to element, its anisotropy energy can be utilized to be biased its free layer magnetic moment, to reduce its susceptibility.
The effect of the asic chip 23 suitable with reference half-bridge circuit is for chip provides constant voltage V
dD, the output signal of electric bridge is converted into switching signal simultaneously, the single-pole switch signal as Figure 12, the latch switch signal as Figure 13, pole as complete in Figure 14 switching signal can be exported according to demand.
Embodiment 4
As shown in Figure 6, a kind of embodiment of the present invention, a kind of single resistance constant current MTJ switch sensor, close ferromagnetic material is responded to, it comprises a magnetoresistive element and the asic chip 32 suitable with it, a magnetoresistive element is a sensing element, and described sensing element 31 is composed in series by one or more MTJ magnetoresistive element.MTJ magnetoresistive element is magnetic nano-multilayer film structure, comprises free magnetic layer and magnetic nailed layer, and free magnetic layer magnetic moment direction 321 is vertical with magnetic nailed layer magnetic moment direction 311, and sensitive direction 7 is parallel with nailed layer magnetic moment direction 311.When having externally-applied magnetic field along sensitive direction 7, the free magnetic layer magnetic moment direction 321 of sensing element 31 can trend towards parallel or antiparallel magnetic nailed layer magnetic moment direction 311, and its resistance can decrease or raise, thus causes exporting V
oUT=V
oH-V
oLchange, its curve of output is as shown in Figure 10.
The effect of the asic chip 32 suitable with single resistance constant-current circuit is for chip provides steady current, the output signal of circuit is converted into switching signal simultaneously, the single-pole switch signal as Figure 12, the latch switch signal as Figure 13, pole as complete in Figure 14 switching signal can be exported according to demand.
Embodiment 5
As shown in Figure 7, a kind of embodiment of the present invention, one recommends full-bridge MTJ switch sensor, close ferromagnetic material is responded to, it comprises four magnetoresistive elements and the asic chip 45 suitable with it, four magnetoresistive element full-bridges connect, and four magnetoresistive elements are four sensing elements 41,42,43 and 44, and four sensing elements 41,42,43 and 44 are composed in series by one or more MTJ magnetoresistive element.MTJ magnetoresistive element is magnetic nano-multilayer film structure, comprise free magnetic layer and magnetic nailed layer, the sensing element 41 of relative position is identical with 422 with the free magnetic layer magnetic moment direction 421 of 42, the sensing element 43 of relative position is identical with 424 with the free magnetic layer magnetic moment direction 423 of 44, the sensing element 41 of relative position is identical with 412 with the magnetic nailed layer magnetic moment direction 411 of 42, the magnetic nailed layer magnetic moment direction 413 of the sensing element of relative position is identical with 414, free magnetic layer magnetic moment direction 421 and 424 antiparallel of the magneto-resistor 41 and 44 of adjacent position, free magnetic layer magnetic moment direction 423 and 422 antiparallel of the magneto-resistor 43 and 42 of adjacent position, magnetic nailed layer magnetic moment direction 411 and 414 antiparallel of the magneto-resistor 41 and 44 of adjacent position, magnetic nailed layer magnetic moment direction 413 and 412 antiparallel of the magneto-resistor 43 and 42 of adjacent position, the free magnetic layer magnetic moment direction of each sensing element is vertical with magnetic nailed layer magnetic moment direction, magnetic moment direction 421 is vertical with magnetic moment direction 411, magnetic moment direction 422 is vertical with magnetic moment direction 412, magnetic moment direction 423 is vertical with magnetic moment direction 413, magnetic moment direction 424 is vertical with magnetic moment direction 414, the sensitive direction 7 of recommending full-bridge is parallel with nailed layer magnetic moment direction.When having externally-applied magnetic field along the sensitive direction 7 of recommending full-bridge, one group of free magnetic layer magnetic moment direction being in two sensing elements of relative position can trend towards antiparallel magnetic nailed layer magnetic moment direction, its resistance can decrease, the free magnetic layer magnetic moment direction that another group is in two sensing elements of relative position can trend towards antiparallel magnetic nailed layer magnetic moment direction, its resistance can increase, thus causes recommending full-bridge output voltage V
oUT=V
oUT+-V
oUT-change, its curve of output is as shown in figure 11.
The effect of the asic chip 45 suitable with recommending full-bridge circuit is for chip provides constant voltage V
dD, the output signal of electric bridge is converted into switching signal simultaneously, the single-pole switch signal as Figure 12, the latch switch signal as Figure 13, pole as complete in Figure 14 switching signal can be exported according to demand.
Embodiment 6
As shown in Figure 8, a kind of embodiment of the present invention, another kind recommends full-bridge MTJ switch sensor, close ferromagnetic material is responded to, it comprises four magnetoresistive elements and the asic chip 45 suitable with it, four magnetoresistive element full-bridges connect, and four magnetoresistive elements are four sensing elements 41,42,43 and 44, and four sensing elements 41,42,43 and 44 are composed in series by one or more MTJ magnetoresistive element.MTJ magnetoresistive element is magnetic nano-multilayer film structure, comprise free magnetic layer and magnetic nailed layer, the magnetic moment direction 411 of the magnetic nailed layer of four sensing elements, 412, 413 is identical with 414, the free magnetic layer magnetic moment direction of each sensing element and the magnetic moment direction of magnetic nailed layer are an acute angle, magnetic moment direction 421 and magnetic moment direction 411 are in an acute angle, the magnetic moment direction 412 of magnetic moment direction 422 and magnetic nailed layer is in an acute angle, magnetic moment direction 423 and magnetic moment direction 413 are in an acute angle, magnetic moment direction 424 and magnetic moment direction 414 are in an acute angle, the free magnetic layer magnetic moment direction of each sensing element is identical with the angle of magnetic nailed layer magnetic moment direction, the free magnetic layer magnetic moment direction 421 and 424 of adjacent position is different, magnetic moment direction 423 and 422 is different, the free magnetic layer magnetic moment direction 421 of relative position is identical with 422, magnetic moment direction 423 is identical with 424, the sensitive direction 7 of recommending full-bridge is vertical with nailed layer magnetic moment direction.When having externally-applied magnetic field along the sensitive direction 7 of recommending full-bridge, one group of free magnetic layer magnetic moment direction being in two sensing elements of relative position can trend towards antiparallel magnetic nailed layer magnetic moment direction, its resistance can decrease, the free magnetic layer magnetic moment direction that another group is in two sensing elements of relative position can trend towards antiparallel magnetic nailed layer magnetic moment direction, its resistance can increase, thus causes recommending full-bridge output voltage V
oUT=V
oUT+-V
oUT-change, its curve of output is as shown in figure 11.
The effect of the asic chip 45 suitable with recommending full-bridge circuit is for chip provides constant voltage V
dD, the output signal of electric bridge is converted into switching signal simultaneously, the single-pole switch signal as Figure 12, the latch switch signal as Figure 13, pole as complete in Figure 14 switching signal can be exported according to demand.
Embodiment 7
As shown in Figure 9, a kind of embodiment of the present invention, a kind of with reference to full-bridge MTJ switch sensor, close ferromagnetic material is responded to, it comprises four magnetoresistive elements and the asic chip suitable with it, four magnetoresistive elements are that full-bridge connects, four magnetoresistive elements are two sensing elements 51, 52 and two reference elements 53, 54, and sensing element and the spaced series connection of reference element, sensing element 51, 52 and reference element 53, 54 is be composed in series by one or more MTJ magnetoresistive element, MTJ magnetoresistive element is magnetic nano-multilayer film structure, comprise free magnetic layer and magnetic nailed layer, the free magnetic layer magnetic moment direction 521 of two sensing elements is identical with 522, the magnetic moment direction 511 of the magnetic nailed layer of two sensing elements is identical with 512, the free magnetic layer magnetic moment direction of each MTJ magnetoresistive element is vertical with magnetic nailed layer magnetic moment direction, magnetic moment direction 521 is vertical with magnetic moment direction 511, magnetic moment direction 522 is vertical with magnetic moment direction 512, with reference to sensitive direction 7 and the nailed layer magnetic moment direction 511 of full-bridge, 512 is parallel.When having externally-applied magnetic field along the sensitive direction 7 with reference to full-bridge, the free magnetic layer magnetic moment direction 521,522 of sensing element 51,52 can trend towards parallel or antiparallel magnetic nailed layer magnetic moment direction 511,512, its resistance can reduce thereupon simultaneously or raise, thus causes the output V with reference to full-bridge
oUT=V
oUT+-V
oUT-change, its typical output curve is as shown in figure 11.
Because MTJ magnetoresistive element 53,54 is reference element, the magnetic moment direction of its free magnetic layer is parallel with the magnetic moment direction of magnetic nailed layer, can by the following method or the combination of following several method reduce its sensitivity: screen layer can be set on its surface, screen layer is the soft magnetic materials of high magnetic permeability, reduces its susceptibility; Inverse ferric magnetosphere or magnetic layer can be deposited on its free layer upper strata or lower floor, utilize the end of a performance coupling of the spin-exchange-coupled of inverse ferric magnetosphere and free layer or magnetic layer and free layer to be biased its free layer magnetic moment, reduce its susceptibility; Can arrange permanent magnet in its both sides, permanent magnet is biased its free layer magnetic moment, reduces its susceptibility; Can by with reference to element long and narrow in ratio sensing element, utilize its anisotropy energy to its free layer magnetic moment be biased, reduce its susceptibility.
The effect of the asic chip 55 suitable with reference full-bridge circuit is for chip provides constant voltage V
dD, the output signal of electric bridge is converted into switching signal simultaneously, the single-pole switch signal as Figure 12, the latch switch signal as Figure 13, pole as complete in Figure 14 switching signal can be exported according to demand.
The present invention utilizes MTJ electromagnetism resistance element to respond to close ferromagnetic material for sensing element, has low-power consumption and highly sensitive characteristic.Adopt the beneficial effect of the technical program to be: high sensitivity, no matter dormancy or duty low in energy consumption, response frequency is high, and volume is little.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. a switch sensor, comprise MTJ magnetoresistive element and asic chip, described MTJ magnetoresistive element and described asic chip suitable, and described MTJ magnetoresistive element is connected on described asic chip, it is characterized in that, described MTJ magnetoresistive element is sensing element or sensing element and reference element, described sensing element and described reference element are composed in series for one or more MTJ magnetoresistive element, described MTJ magnetoresistive element comprises pinning layer, magnetic nailed layer, nonmagnetic oxide layer and free magnetic layer, the free magnetic layer magnetic moment direction of described sensing element is vertical with magnetic nailed layer magnetic moment direction to make the output of described switch sensor for linear convergent rate, and described asic chip provides permanent steady voltage, described linear convergent rate is converted to data signal to export, there is low-power consumption.
2. a kind of switch sensor according to claim 1, is characterized in that, described MTJ magnetoresistive element is one, two or four.
3. a kind of switch sensor according to claim 2, is characterized in that, a described MTJ magnetoresistive element is sensing element.
4. a kind of switch sensor according to claim 2, is characterized in that, described two MTJ magnetoresistive elements are two sensing elements or a sensing element and a reference element, and described two MTJ magnetoresistive elements are half-bridge connects.
5. a kind of switch sensor according to claim 2, it is characterized in that, described four MTJ magnetoresistive elements are two sensing elements and two reference elements of four sensing elements or spaced setting, and described four MTJ magnetoresistive elements are full-bridge connection.
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| CN201110125153.5A CN102790613B (en) | 2011-05-16 | 2011-05-16 | Switching sensor |
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| CN201110125153.5A CN102790613B (en) | 2011-05-16 | 2011-05-16 | Switching sensor |
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| CN102790613B true CN102790613B (en) | 2015-04-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3336873A4 (en) * | 2015-08-12 | 2019-03-27 | Multidimension Technology Co., Ltd. | MAGNETIC RESISTANCE RELAY |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104065367B (en) * | 2013-03-20 | 2017-11-07 | 江苏多维科技有限公司 | A kind of low-watt consumption magnetic resistance switch sensor |
| CN104104376B (en) * | 2013-04-01 | 2018-01-02 | 江苏多维科技有限公司 | Push-pull type chip overturns half-bridge reluctance switch |
| CN108259032B (en) * | 2017-12-14 | 2024-02-09 | 江苏多维科技有限公司 | Hysteresis laser programming single-slice TMR switch sensor |
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| CN202121565U (en) * | 2011-05-16 | 2012-01-18 | 江苏多维科技有限公司 | Switch sensor |
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| EP1574870A2 (en) * | 2004-03-12 | 2005-09-14 | Yamaha Corporation | Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array |
| CN1694277A (en) * | 2004-03-12 | 2005-11-09 | 雅马哈株式会社 | Method for manufacturing magnetic sensor, magnet array and method for manufacturing the magnet array |
| CN2884541Y (en) * | 2004-09-28 | 2007-03-28 | 雅马哈株式会社 | Magnetic sensor |
| CN101988956A (en) * | 2009-07-29 | 2011-03-23 | Tdk株式会社 | Magnetic sensor with bridge circuit including magnetoresistance effect elements |
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| EP3336873A4 (en) * | 2015-08-12 | 2019-03-27 | Multidimension Technology Co., Ltd. | MAGNETIC RESISTANCE RELAY |
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