CN108259032A - Hysteresis laser programming single-slice TMR switch sensor - Google Patents
Hysteresis laser programming single-slice TMR switch sensor Download PDFInfo
- Publication number
- CN108259032A CN108259032A CN201711337932.5A CN201711337932A CN108259032A CN 108259032 A CN108259032 A CN 108259032A CN 201711337932 A CN201711337932 A CN 201711337932A CN 108259032 A CN108259032 A CN 108259032A
- Authority
- CN
- China
- Prior art keywords
- magnetic hysteresis
- switch
- magneto
- magnetic
- switch sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/945—Proximity switches
- H03K17/95—Proximity switches using a magnetic detector
- H03K17/9517—Proximity switches using a magnetic detector using galvanomagnetic devices
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention provides a hysteresis laser programmed single-slice TMR switch sensor, which comprises: a hysteresis switch sensor comprising: the magnetic resistance sensing unit is a TMR sensing unit, the magnetization direction of a free layer, the magnetic field sensitivity direction and the magnetization direction of a reference layer are all along the N or S direction, when the magnetization intensity of the free layer is determined only by an anisotropic field Hk, a bipolar hysteresis switch sensor is formed, or when the magnetization intensity of the free layer is determined by the anisotropic field Hk and a bias field Hb along the N or S direction, an S or N unipolar hysteresis switch sensor or a full-level hysteresis switch sensor is formed, and the magnetization direction of an antiferromagnetic layer is written by adopting a laser programming process; the ASIC circuit comprises a bias function module, a reading function module and an output function module, wherein the bias function module is connected with a power supply end, the reading function module is connected with a signal output end, and the output function module is connected with the reading function module. The invention has the advantages of low power consumption, small size and easy operation.
Description
Technical field
The present invention relates to magnetic sensor field, single slice TMR switch sensors of more particularly to a kind of magnetic hysteresis laser programming.
Background technology
Magneto-resistor switch sensor is widely used in consumer electronics, white domestic appliances, three tables（Ammeter, water meter, gas meter）, automobile
And industrial application.The magnetic switch sensor of mainstream has Hall sensor and anisotropy at present（AMR）Sensor.
For the power consumption of consumer electronics and three table application fields, honeywell switch sensor and AMR switch sensors up to microampere, this is to sacrifice
It is obtained in the case of its working frequency, working frequency is tens hertz, and switching point is tens Gausses, in automobile, industry
Using etc. need the environment of high working frequency, the power consumption of honeywell switch sensor and AMR switch sensors is milliampere grade, work
Frequency is kHz rank.
Tunnel magneto resistance TMR elements have the characteristics that low-power consumption for the sensor of sensing element, can be operated in kHz
Even megahertz working frequency, power consumption can reach a microampere rank, and switch operating point is more than ten Gausses, is had highly sensitive and low
Power consumption, response frequency are high, it is small the characteristics of.
Tunnel magneto resistance TMR switch sensors generally include MTJ linear magnetoresistances sensor bridge and ASIC switch electricity
Road, wherein tunnel magneto resistance TMR linear transducers electric bridge are for perceiving external magnetic field information, and ASIC is used for sensor bridge
Output voltage is transformed into high level and low level switching signal.
For TMR linear magnetoresistance sensor bridges, generally use has single magnetic-field-sensitive direction such as X-axis by one
Magneto-resistor sensing unit slice is pushed away, overturns 180 degree, is sliced to obtain the magnetic resistance sensor unit of drawing of X-axis with this, then passed through
Two slices of binding connection the advantage is that, preparation method is simple, and slice need to only correspond to a ferromagnetic reference structure, and lack
Point is, 2 slices of operation is needed to be accurately positioned in the same plane, are increased due to sensor caused by operation error
Measurement accuracy loss possibility.
Using the design of the ferromagnetic reference of multi-layer film structure, by changing the ferromagnetic layer with inverse ferric magnetosphere coupling interaction
With metal spacing layer form plural layers the number of plies, one of them is odd-level, another be even level method, Ke Yishi
Now pushing away for opposite ferromagnetic reference and draws the manufacture of magneto-resistor sensing unit at magneto-resistor sensing unit, the disadvantage is that, due to
It needs to introduce at least two kinds of multi-layer film structures when depositing plural layers, increases the complexity of micro fabrication.
Chinese Patent Application No. discloses a kind of using laser program-controlled heating magnetic field for the patent of CN201610821610.7
The method of annealing with realize magneto-resistor sensing unit is scanned, quickly heat inverse ferric magnetosphere to blocking temperature more than, simultaneously
It can apply magnetic field along any direction in cooling procedure, can scan one by one, even scanning realizes that magneto-resistor sensing is single piecewise
The orientation in the magnetic-field-sensitive direction of member in either direction can realize that the uniaxial magneto-resistor on single slice passes using this method
The manufacture of two kinds of magneto-resistor sensing units and its array with opposed orientation of unit is felt, so as to overcome the essence of overturning slice
It determines position and deposits the problem of the micro fabrication complexity of a variety of magnetic multi-layer film structures, and can realize single-chip magneto-resistor electricity
The batch micro operations of bridge.
On the other hand, usual switch sensor is generally using linear magnetoresistance sensor, in output voltage V and external magnetic field H
Straight line working region, setting operation point and recurrent point magnetic field and corresponding signal output voltage are used as with reference to signal, use
Comparator realizes rectangle high level and the output of low level switching signal.
In fact, the free layer anisotropy field and outer magnetic field direction of linear magnetoresistance sensor are orthogonal pass
System, i.e. free layer magnetic moment increase with external magnetic field, rotate, until rotation deflecting angle is 90 angle positions, when reversed external magnetic field
When, then deflecting angle is rotated for-an angle of 90 degrees degree position, and magnetization curve is linear relationship at this time, set direction is each when free layer
When anisotropy field Hk directions are consistent with outer magnetic field direction, i.e., its when external magnetic field is consistent with Hk directions, magnetic moment direction does not become
Change, and when external magnetic field is reversed, for magnetic moment direction when outer magnetic field amplitude is less than Hk, still position is constant, and when external magnetic field amplitude
During close to Hk, hysteresis loop feature reversed, and that there is rectangle occurs suddenly, is replied so as to be operated with the magnetic field of bipolar switch
Feature is similar, provides a kind of novel magnetic resistance sensor switch designs thinking, and in addition to bipolar switch sensor it
Outside, monopole type switch sensor can also be obtained using bias magnetic field, and then obtains full polar form switch sensor.
In addition, GMR spin valve structures are operated in CIP patterns, i.e. operating current is parallel to magnetic plural layers plane, this causes
The variation that the variation of free layer thickness can cause sensor resistance big, therefore its thickness change is restricted, this causes Hc to control
System gets up to be not easy, and TMR sensor is operated in CPP patterns, i.e. electric current perpendicular to magnetic plural layers plane so that TMR units
It is easy to graphically obtain small elliptical shape, and TMR sensor performance will not be caused for the control of free layer thickness
It reduces, and is easy to control Hc.In addition, compared with GMR Spin Valves, TMR has more low-power consumption and higher magnetic field sensitivity, size
Smaller.
Invention content
Therefore, the comparison based on any of the above type magnetic resistance sensor, switch operation principle and magnetic-field annealing method, this item
Mesh proposes a kind of single slice TMR switch sensors of magnetic hysteresis laser programming, including：Substrate；Magnetic hysteresis on the substrate
Switch sensor, the magnetic hysteresis switch sensor include one or more magneto-resistor pickup arm, and the magneto-resistor pickup arm is
The both ends mouth structure formed between one or more magneto-resistor sensing unit strings by series, parallel or connection in series-parallel, the magnetic
Resistance sensing unit string includes one or more series connection magneto-resistor sensing units, and the magneto-resistor sensing unit is single for TMR sensings
Member, including：Passivation layer, upper electrode layer, free layer, intermediate insulating layer, reference layer, inverse ferric magnetosphere and Seed Layer, the Seed Layer
Lower electrode layer is formed with inverse ferric magnetosphere, the free layer direction of magnetization, magnetic-field-sensitive direction and the reference layer direction of magnetization are equal
Along N directions or S directions, when the free layer intensity of magnetization is only determined by anisotropy field Hk, form ambipolar magnetic hysteresis and open
Pass sensor is either codetermined by anisotropy field Hk and bias-field Hb and the bias-field Hb directions are also along N or S
Direction then forms S or N monopole type magnetic hysteresis switch sensors or full grade type magnetic hysteresis switch sensor, the inverse ferric magnetosphere magnetization
Direction is using laser programming technique write-in；The ASIC circuit being connected with the magnetic hysteresis switch sensor, the ASIC electricity
Road includes bias capability module, read function module and output function module, and the bias capability module connects the magnetic hysteresis and opens
The power end of sensor, the read module and the function module is closed, the read function module connects the magnetic hysteresis switch
The signal output end of sensor, the output function module connect the read function module.
The magnetic resistance sensor unit is oval, two end toper of diamond shape or intermediate rectangular twin shaft symmetric shape, is grown
Axis L be N or S directions, short axle W；The passivation layer is the material to laser-light transparent, and the upper electrode layer material is at least 150
Cu, Al, Au, Ti or Ta conductive metal material of nm thickness, to prevent by damage from laser；The intermediate insulating layer for Al2O3 or
Person's MgO material；The inverse ferric magnetosphere is high obstruction material temperature；The free layer is high anisotropy field Hk；When the magnetoelectricity
When being interconnected between resistance sensing unit by lower electrode layer described over long distances, the lower electrode layer region is by the upper electrode layer
Region covers, to protect the lower electrode layer from damage from laser.
The magneto-resistor sensing for any magneto-resistor pickup arm that the ambipolar magnetic hysteresis switch sensor is included
The reference layer direction of magnetization of unit is all one of N S directions, and the free layer anisotropy field Hk directions are also all N
Or one of S directions, so as to obtain NrNf,NrSf,SrNfAnd SrSf Magneto-resistor pickup arm described in 4 kinds of different types.
The ambipolar magnetic hysteresis switch sensor is by the NrNf,NrSf,SrNfOr SrSf The magnetoelectricity of one of 4 types
Pickup arm composition is hindered, under the external magnetic field Hex effects of one of N or S directions same orientation, NrNfAnd NrSfFor switch level-magnetic field
The ambipolar magnetic hysteresis switch sensors of the identical N of characteristic, SrNfAnd SrSfThe ambipolar magnetic hysteresis of the S identical for switch level-magnetic signature
Switch sensor, and the ambipolar magnetic hysteresis switch sensor of described N, S has opposite switch phase feature；Or including NrNfPush away or
Person draws magneto-resistor pickup arm and SrNfDraw or push away magneto-resistor pickup arm or NrSfPush away or draw magneto-resistor pickup arm and SrSfDraw or
Person pushes away what magneto-resistor pickup arm was formed, and the ambipolar push-pull type magnetic hysteresis switch sensor can be half-bridge, full-bridge or
Quasi- bridge structure.
The magneto-resistor included by the monopole type magnetic hysteresis switch sensor and the full grade type magnetic hysteresis switch sensor
The reference layer direction of magnetization of the magneto-resistor sensing unit of sensing unit arm is all one of S or N, and the free layer is each
Anisotropy field Hk is also all that either one of N directions free layer bias magnetic field Hb is also all one of S N directions to S, so as to
Obtain NrNfNb,NrNfSb,NrSfNb,NrSfSb, SrNfNb,SrNfSb,SrSfNbAnd SrSfSbMagneto-resistor described in totally 8 kinds of different types passes
Feel arm, Hb ranges exist（0, Hneel+Hc）Between, the magnetic bias layer can be that second coupled with the free layer is antiferromagnetic
Layer is magnetic layer.
The monopole type magnetic hysteresis switch sensor includes NrNfNb,NrNfSb,NrSfNb,NrSfSb, SrNfNb,SrNfSb,SrSfNb
And SrSfSb The magneto-resistor pickup arm composition of one of 8 types, acts in the external magnetic field Hex of one of N or S same orientation
Under, NrNfNbAnd NrSfNb, NrNfSbAnd NrSfSb, SrNfNbAnd SrSfNb, SrNfSbAnd SrSfSbN is corresponded to respectivelyrNb, NrSb, SrNbWith
SrSb4 groups of switch levels-magnetic signature curve, and NrNb, SrNbFor 2 kinds there is the S polar forms magnetic hysteresis of opposite switch phase to switch to pass
Sensor, NrSb, SrSbThe N polar form magnetic hysteresis switch sensors that there is opposite phase for 2 kinds；Or including NrNfNbAnd SrNfNb,
NrSfNbAnd SrSfNb, NrNfSbAnd SrNfSb, NrSfSbAnd SrSfSbIt pushes away either to draw and magneto-resistor pickup arm and draws or push away magnetic for totally 4 pairs
Resistance pickup arm, and further form 4 kinds of push-pull type monopole type magnetic hysteresis switch sensors, wherein NrNfNbAnd SrNfNb, NrSfNbWith
SrSfNbRespectively 2 kinds of N polar form push-pull type magnetic hysteresis switch sensors, NrNfSbAnd SrNfSb, NrSfSbAnd SrSfSbRespectively 2 kinds of S
Polar form push-pull type magnetic hysteresis switch sensor, N the S polar forms push-pull type magnetic hysteresis switch sensor can be half-bridge, full-bridge or
The quasi- bridge structure of person.
The full grade type magnetic hysteresis switch sensor includes NrNfNbAnd SrNfSb, SrNfNbAnd NrNfSb, NrSfNbAnd SrSfSb,
SrSfNbAnd NrSfSbThe N polar forms that one of four kinds of N polar form magneto-resistor pickup arms and the combination of S polar form magneto-resistors pickup arm are respectively constituted
Magnetic hysteresis switch sensor and S polar form magnetic hysteresis switch sensors, and the switch electricity of two N and S polar forms magnetic hysteresis switch sensors
Flat-magnetic signature be or logical relation, wherein SrNfNbAnd NrNfSb, SrSfNbAnd NrSfSbCombination and NrNfNbAnd SrNfSb,
NrSfNbAnd SrSfSbThe full polar form magnetic hysteresis switch sensor that combination is formed has opposite switch phase feature, and the magnetic
The free layer bias-field Hb ＞ of resistance sensing unit | Hneel |+| Hc |.
When the magnetic field bias of the free layer uses the second inverse ferric magnetosphere, the laser corresponding to the magnetic hysteresis switch sensor
Programming technique write operation is divided to two progress, and the first step carries out direction of magnetization write-in to the corresponding inverse ferric magnetosphere of the reference layer
Operation, second step, the second inverse ferric magnetosphere corresponding to the free layer carry out direction of magnetization write operation, and the write-in of second step
Operation temperature is less than the write operation temperature of the first step, and said write temperature corresponds to the blocking temperature of the inverse ferric magnetosphere respectively.
Magneto-resistor sensing unit with identical inverse ferric magnetosphere orientation is respectively formed push arm region and region of drawing bow, described to push away
When pull magnetic hysteresis switch sensor is full-bridge, comprising region of drawing bow described in two push arm regions and two, and described in two
It draws bow described in push arm region and two and draws bow described in region mutual near neighbor or described two push arm regions and two
Region is mixed into a combination push arm region respectively and combination is drawn bow region, and the push arm region and it is described draw bow region it
Between, the combination push arm region and the combination draw bow and separate at least 50 um, the push-pull type magnetic by thermal insulation layer between region
When stagnant switch sensor electric bridge is half-bridge, at least 50 are separated by thermal insulation layer between the push arm region and the region of drawing bow
um。
The ambipolar magnetic hysteresis switch sensor, monopole type magnetic hysteresis switch sensor include the single magneto-resistor pickup arm
When or two magneto-resistor pickup arms including of full grade type magnetic hysteresis switch sensor, the ASIC bias capabilities module is tool
There is the current source of temperature compensation function, when using push-pull type half-bridge or full bridge structure, the ASIC bias capabilities module is
Voltage source with temperature compensation function.
For the monopole type magnetic hysteresis switch sensor and ambipolar magnetic hysteresis switch sensor, the ASIC read functions
Module includes a comparator, and for full grade type magnetic hysteresis switch sensor, the ASIC read functions module includes two comparisons
Device, respectively correspond to two magneto-resistor pickup arms, and two comparators be or logical relation；The push-pull type magnetic hysteresis switch
When sensor is half-bridge structure, output signal is directly connected to described signal comparator one end, and the other end is reference signal, described
When push-pull type magnetic hysteresis switch sensor is full bridge structure, output signal is directly connected to the signal comparator both ends.
The ASIC read functions module further includes the filtering being connected with the magnetic hysteresis switch sensor signal output end
Device, amplifier and the latch being connected with the comparator, buffer.
The ASIC output functions module is one of current switch, voltage switch, resistance switch or another switch.
The magnetic hysteresis switch sensor is deposited directly to the top layer of the ASIC circuit or the magnetic hysteresis switch sensor
It is connected between the ASIC circuit by binding.
The magnetic manipulation field of the magnetic hysteresis switch sensor is switch raised voltage amplitude 60 ~ 80%, replys magnetic field as switch
The 60 ~ 80% of drop-out voltage amplitude.
Description of the drawings
Fig. 1 magnetic resistance sensor construction of switch figures；
Fig. 2 single armed magnetic hysteresis switch sensor structure charts；
Fig. 3 TMR magneto-resistor magnetic thin film stacks structure one；
Fig. 4 TMR magneto-resistor magnetic thin film stacks structure two；
The full polar form magnetic hysteresis switch sensor orientations of Fig. 5 and switch level-magnetic chart；
Fig. 6 push-pull type monopole type magnetic hysteresis switch sensor is orientated and switch-magnetic chart；
Fig. 7 push-pull type half-bridge magnetic hysteresis switch sensor structure charts；
Fig. 8 push-pull type full-bridge magnetic hysteresis switch sensor structure charts；
Fig. 9 monopole type single armed magnetic hysteresis switch sensor is orientated and switch level-magnetic chart；
Figure 10 push-pull type monopole type magnetic hysteresis switch sensor is orientated and switch level-magnetic chart；
The full polar form magnetic hysteresis switch sensor orientations of Figure 11 and switch level-magnetic chart；
Figure 12 ASCI circuit structure diagrams；
Figure 13 monopoles or full polar form magnetic hysteresis switch sensor power supply connection figure；
The full polar form magnetic hysteresis switch sensor signal output figures of Figure 14；
Figure 15 magnetic hysteresis switch sensor electrical connection graphs；
Figure 16 magnetic hysteresis switch sensor threshold areal maps；
Figure 17 magnetic hysteresis switch sensor and ASIC circuit location diagram.
Specific embodiment
Purpose, technical scheme and advantage to make the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
In attached drawing, the technical solution in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, instead of all the embodiments.
It is below with reference to the accompanying drawings and in conjunction with the embodiments, next that the present invention will be described in detail.
Embodiment one
Fig. 1 is a kind of single slice TMR switch sensor compositions of magnetic hysteresis laser programming, including two parts：Magnetic hysteresis switch sensor
1, ASIC circuit 2, wherein magnetic hysteresis switch sensor 1 generate sensing for external magnetic field source 3, and magnetic field signal is transformed into electric signal
It is transformed into switch level-magnetic field signal 4 through ASIC circuit 2, wherein external magnetic field source 3 can be N the S poles of permanent magnet.
Fig. 2 is the structure chart of magnetic hysteresis switch sensor 1, including substrate 5, one or more magnetoelectricity on substrate 5
Pickup arm 6 is hindered, magneto-resistor pickup arm 6 by series, parallel or is gone here and there simultaneously between one or more magneto-resistor sensing unit strings 7
Join the both ends mouth structure formed, magneto-resistor sensing unit string 7 includes one or more series connection magneto-resistor sensing units 8, and magnetoelectricity
Resistance sensing unit 8 is TMR sensing units.
Fig. 3 is 110 structure chart of TMR sensing units plural layers, including：Passivation layer 190, upper electrode layer 180, free layer
170th, intermediate insulating layer 160, reference layer 150, inverse ferric magnetosphere 140 and Seed Layer 130, the Seed Layer 140 and inverse ferric magnetosphere 130
Form lower electrode layer 120.
In addition, magnetic resistance sensor unit 8 is oval, two end toper of diamond shape or intermediate rectangular twin shaft symmetric shape,
It is N or S directions that long axis, which is L, short axle W, and as shown in the 8-1 in Fig. 2, the passivation layer 190 is the material to laser-light transparent, institute
Cu, Al, Au, Ti or Ta conductive metal material that 180 material of upper electrode layer is at least 150 nm thickness are stated, to prevent from being damaged by laser
Wound；The intermediate insulating layer 160 is Al2O3 or MgO material；The inverse ferric magnetosphere 140 is high obstruction material temperature；It is described from
It is high anisotropy field Hk by layer 170；When mutual by lower electrode layer 120 described over long distances between the magneto-resistor sensing unit 8
During connection, 120 region of lower electrode layer is covered by 180 region of upper electrode layer, to protect the lower electrode layer
120 from damage from laser.
Fig. 4 is 111 figure of magneto-resistor sensing unit plural layers another kind structure, and 170 direction of magnetization of free layer is by each
Anisotropy field Hk and bias-field Hb are codetermined, bias-field can by the second inverse ferric magnetosphere 175 for being coupled with free layer 170 come
Effect, can also be acted on by magnetic layer.
Since external magnetic field source 3 usually includes the permanent magnet of N and S magnetic poles, for convenience's sake, define all outer
Magnetic direction is two kinds of opposite directions of N and S, and defines other directions in this, as reference direction, as shown in Fig. 2, magnetic
The longitudinal axis L of resistance sensing unit 8-1 be N or S directions, free layer direction of magnetization Hf, magnetic-field-sensitive direction Hex and the reference layer
Direction of magnetization Hr is each along N directions or S directions, when the free layer intensity of magnetization Hf is only determined by anisotropy field Hk, shape
It is codetermined, and the bias-field Hb side into ambipolar magnetic hysteresis switch sensor or by anisotropy field Hk and bias-field Hb
To also along N S directions, then S or N monopole type magnetic hysteresis switch sensors or full grade type magnetic hysteresis switch sensor are formed.
The magneto-resistor sensing unit structures of various types magnetic hysteresis switch sensor are described for convenience, are defined as follows
Type code accords with：
NrSfNb
N, S represent orientation, and N represents direction and is orientated unanimously with external magnetic field source N poles, and S is represented with external magnetic field source S poles orientation unanimously.
Subscript r represents reference layer, and f represents free layer, and b represents magnetic field bias layer
NrSfNbRepresent that reference layer is oriented to N, free layer is oriented to S, and magnetic field bias layer is N.
On the other hand, since the magneto-resistor sensing unit of all different orientations is located at same substrate, by same
One external magnetic field, therefore in following analysis, outer magnetic field direction takes same direction constant.
The magneto-resistor pickup arm that ambipolar magnetic hysteresis switch sensor is included is according to the free layer direction of magnetization and reference layer magnetic
Change the difference in direction, can be divided into 4 types, type code symbol is as shown in table 1, altogether there are four types of, respectively NrNf,NrSf,
SrNfAnd SrSf, corresponding to magneto-resistor sensing unit orientation maps and switch level-magnetic signature curve as shown in figure 5, by scheming
As can be seen that the N in wherein Fig. 5 a1rNfN in orientation maps and Fig. 5 a2rSfOrientation maps have opposite free layer orientation Hf, ginseng
It is identical to examine layer orientation Hr, but switch level-magnetic signature in the switch level in Fig. 5 b1-magnetic signature curve and Fig. 5 b2
Orientation maps shown in curve identical, practical figure 5 above a1 and Fig. 5 a2 are respectively same switch level-magnetic signature curve at two
Corresponding two kind orientation maps during switch level, therefore NrNf,NrSfA kind of ambipolar magnetic hysteresis switch sensors of N can be regarded as,
Likewise, the orientation maps shown in Fig. 5 a3 and Fig. 5 a4 correspond to same switch level-magnetic signature curve graph 5b3 and Fig. 5 b4, because
This SrNfAnd SrSfA kind of ambipolar magnetic hysteresis switch sensors of S can be regarded as, still further it can be seen that, the ambipolar magnetic hysteresis switch sensors of S
There is switch level-magnetic signature of opposite phase, i.e., the outer magnetic corresponding to low and high level with the ambipolar magnetic hysteresis switch sensors of N
Field orientation is opposite.
Table 1
Thus ambipolar magnetic hysteresis switch sensor can include single magneto-resistor pickup arm, and the magneto-resistor pickup arm is by list
The magneto-resistor sensing unit composition of one orientation, the magneto-resistor sensing unit are NrNf,NrSf,SrNfAnd SrSfIn one kind, knot
Composition such as Fig. 2.
Fig. 6 is the push-pull type structure chart of ambipolar magnetic hysteresis switch sensor, and the magneto-resistor that two kinds have opposite phase is passed
Sense arm is respectively as push arm and draws bow, and forms push-pull type structure, the signal output so as to be enhanced, such as N in Fig. 6 a1rSfWith
SrSfFor magneto-resistor pickup arm respectively as R02 the and R01 arms for recommending half-bridge structure, Fig. 6 b1 and Fig. 6 c1 are respectively NrSfAnd SrSf's
Magneto-resistor sensing unit orientation maps, it can be seen that free layer magnetic field Hf directions are identical, and reference layer direction of magnetization Hr is then different
Orientation, later in following analysis, in the magnetic hysteresis switch sensor structure comprising more magneto-resistor pickup arms, by free layer magnetic
Field Hf orientation definition is identical, its object is to：Free layer Hk orientations are that same manufacturing process obtains on same wafer, therefore are had
There is consistency, and the manipulation of its orientation of free layer negative direction to part magneto-resistor sensing unit is harder, Fig. 6 d1 and figure
6e1 is respectively NrSfAnd SrSfSwitch level-magnetic signature curve, opposite in phase, therefore push-pull type shown in Fig. 6 f1 is double
The switch level of polar form magnetic hysteresis switch sensor-magnetic signature curve by the switch level corresponding to 2 times of Fig. 6 d1 and Fig. 6 e1-
Magnetic signature curve switch level amplitude.
S in similary Fig. 6 a2rNfAnd NrNfMagneto-resistor pickup arm is respectively as R01 the and R02 arms for recommending half-bridge structure, figure
The S that 6b2 and Fig. 6 c2 are respectivelyrNfAnd NrNfMagneto-resistor sensing unit orientation maps, again it can be seen that free layer magnetic field Hf directions
It is identical, and reference layer direction of magnetization Hr then has a different orientation, and the ambipolar magnetic hysteresis switch sensor of push-pull type shown in Fig. 6 f2
Switch level-magnetic signature curve is by the switch level corresponding to 2 times of Fig. 6 d2 and Fig. 6 e2-magnetic signature curve switch level
Amplitude, the ambipolar push-pull type magnetic hysteresis switch sensor can also have full-bridge or quasi- bridge structure other than half-bridge.
Fig. 7 is comprising the ambipolar magnetic hysteresis switch sensor of push-pull type for pushing away magneto-resistor pickup arm with drawing magneto-resistor pickup arm
Structure chart, comprising two magneto-resistor pickup arms 9 and 10, and 11 He of the reference layer direction of magnetization corresponding to two magneto-resistor pickup arms
12 have opposite direction, and the free layer direction of magnetization is then identical, and two magneto-resistor pickup arm composition push-pull type bridge structures.
Fig. 8 is the ambipolar magnetic hysteresis switch sensor of the push-pull type full-bridge comprising four magneto-resistor pickup arms 13,14,15 and 16
Schematic diagram, wherein pushing away magneto-resistor pickup arm 13,15 and drawing magneto-resistor pickup arm 14,16 with opposite reference layer direction.
The type of magneto-resistor sensing unit arm that table 2 can include for monopole type and full polar form magnetic hysteresis switch sensor, root
Hf is orientated according to the free layer of magneto-resistor sensing unit, the difference of reference layer orientation Hr and bias layer Hb orientations obtains NrNfNb,
NrNfSb,NrSfNb,NrSfSb, SrNfNb,SrNfSb,SrSfNbAnd SrSfSbTotally 8 type, Hb ranges exist（0, Hneel+Hc）Between.
Table 2
Fig. 9 is that the corresponding single magneto-resistor sensing unit arm monopole type magnetic hysteresis comprising 8 type magneto-resistor sensing units is opened
Close the orientation maps of sensor and switch level-magnetic signature relational graph.Fig. 9 a1 and Fig. 9 a2 are respectively NrNfSbAnd NrNfNbOrientation
Figure, free layer orientation Hf is identical, and reference layer orientation Hr is identical, and bias layer orientation Hb is different, can be in terms of Fig. 9 b1 and 9b2
Go out, switch level-magnetic signature curve has opposite polarity, and phase is identical, same situation such as Fig. 9 a3,9b3 and figure
S corresponding to 9a4,9b4rSfSbAnd SrSfNbOrientation maps and switch level-magnetic signature figure and Fig. 9 a5,9b5 and Fig. 9 a6,
The corresponding S of 9b6 institutesrNfSbAnd SrNfNbOrientation maps and switch level-magnetic signature figure, Fig. 9 a7,9b7 and Fig. 9 a8,9b8 institutes
Corresponding NrSfSbAnd NrSfNbOrientation maps and switch level-magnetic signature figure.On the other hand, compare Fig. 9 a1 and Fig. 9 a7 to distinguish
Corresponding orientation maps, it can be seen that reference layer direction Hr and bias layer direction Hr are identical, and free layer direction Hf is on the contrary, can be with
Find out that switch level-magnetic signature relational graph corresponding to Fig. 9 b1 and Fig. 9 b7 has identical polarity and phase characteristic, it is practical
Upper NrNfSbAnd NrSfSbTwo low and high level state of orientation in the corresponding switch sensor work of orientation of free layer, can also see
Go out, the N corresponding to Fig. 9 a1 and Fig. 9 a5rNfSbAnd SrNfSbFree layer Hf orientations and bias layer Hb are equally oriented in orientation maps, but
It is that reference layer orientation Hr is not in the same direction, it can be seen that switch level-magnetic signature figure corresponding to Fig. 9 b1 and Fig. 9 b5 has polarity
It is identical, the feature of opposite in phase.
Thus, it will be seen that monopole type magnetic hysteresis switch sensor can include the magneto-resistor pickup arm of single type, wherein
NrNfNbAnd NrSfNb, NrNfSbAnd NrSfSb, SrNfNbAnd SrSfNb, SrNfSbAnd SrSfSbN is corresponded to respectivelyrNb, NrSb, SrNbAnd SrSb
4 groups of switch levels-magnetic signature curve, and NrNb, SrNbThe S polar form magnetic hysteresis switch sensings that there is opposite switch phase for 2 kinds
Device, NrSb, SrSbThe N polar form magnetic hysteresis switch sensors that there is opposite phase for 2 kinds.
Figure 10 is the structure chart of push-pull type monopole type magnetic hysteresis switch sensor, and Figure 10 a1 is recommend bridge structure chart, NrNfSbWith
SrNfSbMagneto-resistor pickup arm respectively constitutes push arm RO1 and the R02 that draws bow, and Figure 10 b1 and Figure 10 b2 are respectively NrNfSbAnd SrNfSb's
Orientation maps are orientated with common free layer Hf, and reference layer orientation Hr is different, and bias-field Hb is equally oriented, Figure 10 d1
With N in Figure 10 e1rNfSbAnd SrNfSbSwitch level-magnetic signature have polarity identical, and the characteristics of opposite in phase, Figure 10 f1
For switch level-magnetic field signal figure of Figure 10 a1 outputs, 2 times of N of amplitude output signalrNfSbAnd SrNfSbEither switch electricity
Flat-magnetic signature.Equally, NrNfNbAnd SrNfNbMagneto-resistor pickup arm can also form monopole type push-pull type magnetic hysteresis switch sensing
Device, bridge architecture figure as shown in Figure 10 a2, orientation maps be Figure 10 b2 and Figure 10 c2, switch level-magnetic signature curve
Such as Figure 10 d2 and Figure 10 e2, bridge structure output signal such as Figure 10 f2 are recommended.NrSfSbAnd SrSfSbWhat magneto-resistor pickup arm was formed
Monopole type push-pull type magnetic hysteresis switch sensor, for bridge architecture figure as shown in Figure 10 a3, orientation maps are Figure 10 b3 and Figure 10 c3,
Its switch level-magnetic signature curve such as Figure 10 d3 and Figure 10 e3 recommend bridge structure output signal such as Figure 10 f3.NrSfNbWith
SrSfNbMagneto-resistor pickup arm form monopole type push-pull type magnetic hysteresis switch sensor, bridge architecture figure as shown in Figure 10 a4,
Orientation maps are Figure 10 b4 and Figure 10 c4, and it is defeated to recommend bridge structure by switch level-magnetic signature curve such as Figure 10 d4 and Figure 10 e4
Go out signal such as Figure 10 f4.
Wherein NrNfNbAnd SrNfNb, NrSfNbAnd SrSfNbRespectively 2 kinds of N polar form push-pull type magnetic hysteresis switch sensors, NrNfSb
And SrNfSb, NrSfSbAnd SrSfSbRespectively 2 kinds of S polar form push-pull type magnetic hysteresis switch sensors, N the S polar forms push-pull type
Magnetic hysteresis switch sensor can be half-bridge, full-bridge or quasi- bridge structure.
Full polar form magnetic hysteresis switch sensor generally includes a N polarity magnetic hysteresis switch sensor and a S polarity magnetic hysteresis is opened
Sensor is closed, therefore, N the and S monopole type magnetic hysteresis switch sensings that can be equally formed from single magneto-resistor pickup arm shown in Fig. 9
Device combines to obtain.
Figure 11 is the structure chart of full polar form magnetic hysteresis switch sensor, and Figure 11 a1 include two magneto-resistors and sense arm configuration
SrNfNbAnd NrNfSb, and two bridge arms it is various form monopole type magnetic hysteresis switch sensors, the output signal of the two be or relationship,
Figure 11 b1 and Figure 11 c1 are respectively corresponding orientation maps, and there is free layer same direction Hf, reference layer Hr to have opposite direction, partially
Layer Hb is put with opposite direction, Figure 11 d1 and Figure 11 e1 are corresponding switch level-magnetic signature figure, the two polarity phase
Instead, respectively N and S poles, and the opposite in phase of switch level-magnetic signature, final output figure are that the typical case shown in Figure 11 f1 is complete
Polar form magnetic hysteresis switch sensor switch level-field curve.
Figure 11 a2 include two magneto-resistors and sense arm configuration NrNfNbAnd SrNfSb, and the various composition monopole type magnetic of two bridge arms
Stagnant switch sensor, Figure 11 b2 and Figure 11 c2 are respectively corresponding orientation maps, and free layer has same direction Hf, reference layer Hr tools
There is opposite direction, bias layer Hb has opposite direction, and Figure 11 d2 and Figure 11 e2 are corresponding switch level-magnetic signature
Figure, the two polarity is on the contrary, respectively N and S poles, and the opposite in phase of switch level-magnetic signature, final output figure are Figure 11 f1
S in the full polar form magnetic hysteresis switch sensor switch level of shown typical case-field curve, with Figure 11 a1-f1rNfNbAnd NrNfSbMagnetoelectricity
Unlike full polar form magnetic hysteresis switch sensor switch level-field curve that resistance pickup arm is formed, the two has opposite
Phase property and switch low and high level are opposite.
N corresponding to Figure 11 a3-f3rSfNbAnd SrSfSbThe full grade type magnetic hysteresis that two magneto-resistor sensing arm configurations are formed is opened
Close the N of sensor and Figure 11 a2-f2rNfNbAnd SrNfS is complete, and grade type magnetic hysteresis switch sensor switch level-field curve feature has
Same phase.
S corresponding to Figure 11 a4-f4rSfNbAnd NrSfSbThe full grade type magnetic hysteresis that two magneto-resistor sensing arm configurations are formed is opened
Close the S of sensor and Figure 11 a1-f1rNfNbAnd NrNfSbFull grade type magnetic hysteresis switch sensor switch level-field curve feature tool
There are same phase, and the free layer bias-field Hb ＞ of the magneto-resistor sensing unit | Hneel |+| Hc |.
Figure 12 is ASIC circuit structure chart, and including bias capability module, read function module and output function module are described
Bias capability module connects the power end of the magnetic hysteresis switch sensor, the read module and the function module, described to read
The signal output end that function module connects the magnetic hysteresis switch sensor is read, the output function module connects the read function
Module.
Figure 13 is bias capability module and the connection figure of magnetic hysteresis switch sensor, for including single magneto-resistor pickup arm
Monopole type magnetic hysteresis switch sensor and ambipolar magnetic hysteresis switch sensor, ASIC bias capabilities module can be current source 21,
For push-pull type magnetic hysteresis switch sensor, ASIC bias capabilities module can be voltage source 22, and voltage source and current source all bands
Temperature compensation function.
Read function module includes a comparator, as shown in figure 14 for full grade type magnetic hysteresis switch sensor, described
ASIC read functions module includes two comparators 23 and 24, corresponds to two magneto-resistor pickup arms, and two comparisons respectively
Device be or logical relation 25, it is as shown in figure 13 for monopole type and ambipolar magnetic hysteresis switch sensor, then comprising 1 comparator
20, when the push-pull type magnetic hysteresis switch sensor is half-bridge structure, output signal is directly connected to described signal comparator one end,
The other end is reference signal such as Figure 13 b, and when the push-pull type magnetic hysteresis switch sensor is full bridge structure, output signal is directly connected to
To the signal comparator both ends such as Figure 13 c.ASIC read function modules further include defeated with the magnetic hysteresis switch sensor signal
Wave filter, amplifier and the latch being connected with the comparator that outlet is connected, buffer.
Figure 15 typically recommends full-bridge magnetic hysteresis switch sensor for one, and 600 be push-pull type sensor full-bridge, and 601 be one
A comparator, 602 output function modules, can be current switch, voltage switch, resistance switch or another switch it
One.
Figure 16 is the magnetic manipulation field threshold figure of magnetic hysteresis switch sensor, and wherein switching manipulation Hop is that voltage magnitude threshold is
60 ~ 80%, reply magnetic field Hrp be switch drop-out voltage amplitude 60 ~ 80%.
Figure 17 is magnetic hysteresis switch sensor and ASIC circuit connection figure, and magnetic hysteresis switch sensor 40 can be deposited directly to
Pass through 60 connection of binding between the top layer of ASIC circuit 50 or the magnetic hysteresis switch sensor 40 and the ASIC circuit 50.
Claims (15)
1. a kind of single slice TMR switch sensors of magnetic hysteresis laser programming, which is characterized in that including：Magnetic hysteresis switch sensor, institute
Magnetic hysteresis switch sensor is stated to include：Substrate, one or more magneto-resistor pickup arm on the substrate, the magneto-resistor
The two-port knot that pickup arm is formed between one or more magneto-resistor sensing unit strings by series, parallel or connection in series-parallel
Structure, the magneto-resistor sensing unit string include one or more series connection magneto-resistor sensing units, and the magneto-resistor sensing unit is
TMR sensing units, including：Passivation layer, upper electrode layer, free layer, intermediate insulating layer, reference layer, inverse ferric magnetosphere and Seed Layer, institute
It states Seed Layer and inverse ferric magnetosphere forms lower electrode layer, the free layer direction of magnetization, magnetic-field-sensitive direction and the reference layer magnetic
Change direction each along N directions or S directions, when the free layer intensity of magnetization is only determined by anisotropy field Hk, formed bipolar
Type magnetic hysteresis switch sensor is codetermined by anisotropy field Hk and bias-field Hb, and the bias-field Hb directions also edge
N S directions, then form S or N monopole type magnetic hysteresis switch sensors or full grade type magnetic hysteresis switch sensor, the anti-iron
The magnetosphere direction of magnetization is using laser programming technique write-in；The ASIC circuit being connected with the magnetic hysteresis switch sensor, institute
It states ASIC circuit and includes bias capability module, read function module and output function module, the bias capability module connects institute
The power end of magnetic hysteresis switch sensor, the read module and the function module is stated, described in the read function module connection
The signal output end of magnetic hysteresis switch sensor, the output function module connect the read function module.
A kind of 2. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 1, which is characterized in that institute
Magnetic resistance sensor unit is stated as oval, two end toper of diamond shape or intermediate rectangular twin shaft symmetric shape, longitudinal axis L is N or S
Direction, short axle W；The passivation layer is the material to laser-light transparent, and the upper electrode layer material is at least 150 nm thickness
Cu, Al, Au, Ti or Ta conductive metal material, to prevent by damage from laser；The intermediate insulating layer is Al2O3 MgO materials
Material；The inverse ferric magnetosphere is high obstruction material temperature；The free layer is high anisotropy field Hk；When the magneto-resistor senses list
When being interconnected between member by lower electrode layer described over long distances, the lower electrode layer region is by the upper electrode layer region
Covering, to protect the lower electrode layer from damage from laser.
A kind of 3. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 1, which is characterized in that institute
State the reference of the magneto-resistor sensing unit of any magneto-resistor pickup arm that ambipolar magnetic hysteresis switch sensor is included
Layer the direction of magnetization be all N either one of S directions free layer anisotropy field Hk directions be also all N S directions it
One, so as to obtain NrNf,NrSf,SrNfAnd SrSf Magneto-resistor pickup arm described in 4 kinds of different types.
A kind of 4. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 3, which is characterized in that institute
Ambipolar magnetic hysteresis switch sensor is stated by the NrNf,NrSf,SrNfOr SrSf The magneto-resistor pickup arm group of one of 4 types
Into, under the external magnetic field Hex effects of one of N or S directions same orientation, NrNfAnd NrSfIt is identical for switch level-magnetic signature
The ambipolar magnetic hysteresis switch sensors of N, SrNfAnd SrSfThe ambipolar magnetic hysteresis switch sensings of the S identical for switch level-magnetic signature
Device, and the ambipolar magnetic hysteresis switch sensor of described N, S has opposite switch phase feature；Or including NrNfPush away or draw magnetoelectricity
Hinder pickup arm and SrNfDraw or push away magneto-resistor pickup arm or NrSfPush away or draw magneto-resistor pickup arm and SrSfDraw or push away magnetoelectricity
Resistance pickup arm is formed, and the ambipolar push-pull type magnetic hysteresis switch sensor can be half-bridge, full-bridge or quasi- bridge structure.
A kind of 5. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 1, which is characterized in that institute
State monopole type magnetic hysteresis switch sensor and the magneto-resistor sensing unit arm included by the full grade type magnetic hysteresis switch sensor
The reference layer direction of magnetization of the magneto-resistor sensing unit be all one of S or N, the free layer anisotropy field Hk
Also it is all that either one of N directions free layer bias magnetic field Hb is also all one of S N directions to S, so as to obtain NrNfNb,
NrNfSb,NrSfNb,NrSfSb, SrNfNb,SrNfSb,SrSfNbAnd SrSfSbMagneto-resistor pickup arm, Hb models described in totally 8 kinds of different types
It is trapped among（0, Hneel+Hc）Between, the magnetic bias layer can be the second inverse ferric magnetosphere for being coupled with the free layer, Huo Zhewei
Magnetic layer.
A kind of 6. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 5, which is characterized in that institute
It states monopole type magnetic hysteresis switch sensor and includes NrNfNb,NrNfSb,NrSfNb,NrSfSb, SrNfNb,SrNfSb,SrSfNbAnd SrSfSb 8
The magneto-resistor pickup arm composition of one of type, under the external magnetic field Hex effects of one of N or S same orientation, NrNfNbWith
NrSfNb, NrNfSbAnd NrSfSb, SrNfNbAnd SrSfNb, SrNfSbAnd SrSfSbN is corresponded to respectivelyrNb, NrSb, SrNbAnd SrSb4 groups of switches
Level-magnetic signature curve, and NrNb, SrNbThe S polar form magnetic hysteresis switch sensors that there is opposite switch phase for 2 kinds, NrSb,
SrSbThe N polar form magnetic hysteresis switch sensors that there is opposite phase for 2 kinds；Or including NrNfNbAnd SrNfNb, NrSfNbAnd SrSfNb,
NrNfSbAnd SrNfSb, NrSfSbAnd SrSfSbIt pushes away either to draw and magneto-resistor pickup arm and draws or push away magneto-resistor pickup arm for totally 4 pairs, and
Further 4 kinds of push-pull type monopole type magnetic hysteresis switch sensors of composition, wherein NrNfNbAnd SrNfNb, NrSfNbAnd SrSfNbRespectively 2
Kind N polar form push-pull type magnetic hysteresis switch sensors, NrNfSbAnd SrNfSb, NrSfSbAnd SrSfSbRespectively 2 kinds of S polar form push-pull type magnetic
Stagnant switch sensor, either S polar forms push-pull type magnetic hysteresis switch sensor can be half-bridge, full-bridge or quasi- bridge structure to the N.
A kind of 7. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 5, which is characterized in that institute
It states full grade type magnetic hysteresis switch sensor and includes NrNfNbAnd SrNfSb, SrNfNbAnd NrNfSb, NrSfNbAnd SrSfSb, SrSfNbAnd NrSfSb
The N polar form magnetic hysteresis switch sensings that one of four kinds of N polar form magneto-resistor pickup arms and the combination of S polar form magneto-resistors pickup arm are respectively constituted
Device and S polar form magnetic hysteresis switch sensors, and switch level-magnetic signature of two N and S polar forms magnetic hysteresis switch sensors is
Or logical relation, wherein SrNfNbAnd NrNfSb, SrSfNbAnd NrSfSbCombination and NrNfNbAnd SrNfSb, NrSfNbAnd SrSfSbCombination
Form the full polar form magnetic hysteresis switch sensor have opposite switch phase feature, and the magneto-resistor sensing unit from
By layer bias-field Hb ＞ | Hneel |+| Hc |.
8. a kind of single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 5,6 or 7, feature exist
In, when the magnetic field bias of the free layer uses the second inverse ferric magnetosphere, the laser programming corresponding to the magnetic hysteresis switch sensor
Technique write operation is divided to two progress, and the first step carries out direction of magnetization write operation to the corresponding inverse ferric magnetosphere of the reference layer,
Second step, the second inverse ferric magnetosphere corresponding to the free layer carry out direction of magnetization write operation, and the write operation of second step
Temperature is less than the write operation temperature of the first step, and said write temperature corresponds to the blocking temperature of the inverse ferric magnetosphere respectively.
9. a kind of single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 5,6 or 7, feature exist
In the magneto-resistor sensing unit with identical inverse ferric magnetosphere orientation is respectively formed push arm region and region of drawing bow, the push-pull type
When magnetic hysteresis switch sensor is full-bridge, region, and two push arms of drawing bow described in two push arm regions and two are included
It draws bow described in region and two region of drawing bow described in region mutual near neighbor or described two push arm regions and two
It is mixed into a combination push arm region respectively and combination is drawn bow region, and between the push arm region and the region of drawing bow, institute
It states combination push arm region and the combination draws bow and separates at least 50 um by thermal insulation layer between region, the push-pull type magnetic hysteresis is opened
When closing sensor bridge as half-bridge, at least 50 um are separated by thermal insulation layer between the push arm region and the region of drawing bow.
A kind of 10. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 1, which is characterized in that institute
When stating ambipolar magnetic hysteresis switch sensor, monopole type magnetic hysteresis switch sensor comprising the single magneto-resistor pickup arm, Huo Zhequan
Two magneto-resistor pickup arms that grade type magnetic hysteresis switch sensor includes, the ASIC bias capabilities module are with temperature-compensating
The current source of function, when using push-pull type half-bridge or full bridge structure, the ASIC bias capabilities module is to be mended with temperature
Repay the voltage source of function.
11. single slice TMR switch sensors of a kind of magnetic hysteresis laser programming according to claim 1, which is characterized in that right
In the monopole type magnetic hysteresis switch sensor and ambipolar magnetic hysteresis switch sensor, the ASIC read functions module includes one
A comparator, for full grade type magnetic hysteresis switch sensor, the ASIC read functions module includes two comparators, corresponds to respectively
Two magneto-resistor pickup arms, and two comparators be or logical relation；The push-pull type magnetic hysteresis switch sensor is half
During bridge structure, output signal is directly connected to described signal comparator one end, and the other end is reference signal, the push-pull type magnetic hysteresis
When switch sensor is full bridge structure, output signal is directly connected to the signal comparator both ends.
A kind of 12. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 1, which is characterized in that institute
It states ASIC read function modules and further includes wave filter, the amplifier being connected with the magnetic hysteresis switch sensor signal output end,
And the latch being connected with the comparator, buffer.
A kind of 13. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 1, which is characterized in that institute
ASIC output functions module is stated as one of current switch, voltage switch, resistance switch or another switch.
A kind of 14. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 1, which is characterized in that institute
It states magnetic hysteresis switch sensor and is deposited directly to the top layer of the ASIC circuit or the magnetic hysteresis switch sensor and the ASIC
It is connected between circuit by binding.
A kind of 15. single slice TMR switch sensors of magnetic hysteresis laser programming according to claim 1, which is characterized in that institute
The magnetic manipulation field for stating magnetic hysteresis switch sensor is switch raised voltage amplitude 60 ~ 80%, replys magnetic field as switch drop-out voltage width
The 60 ~ 80% of value.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711337932.5A CN108259032B (en) | 2017-12-14 | 2017-12-14 | Hysteresis laser programming single-slice TMR switch sensor |
| PCT/CN2018/120902 WO2019114790A1 (en) | 2017-12-14 | 2018-12-13 | Magnetic hysteresis laser programmed single slice tmr switch sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711337932.5A CN108259032B (en) | 2017-12-14 | 2017-12-14 | Hysteresis laser programming single-slice TMR switch sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108259032A true CN108259032A (en) | 2018-07-06 |
| CN108259032B CN108259032B (en) | 2024-02-09 |
Family
ID=62722903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711337932.5A Active CN108259032B (en) | 2017-12-14 | 2017-12-14 | Hysteresis laser programming single-slice TMR switch sensor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108259032B (en) |
| WO (1) | WO2019114790A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019114790A1 (en) * | 2017-12-14 | 2019-06-20 | 江苏多维科技有限公司 | Magnetic hysteresis laser programmed single slice tmr switch sensor |
| CN113063344A (en) * | 2021-03-19 | 2021-07-02 | 江苏多维科技有限公司 | Low magnetic field magnetism resistance angle sensor |
| CN114243242A (en) * | 2021-12-17 | 2022-03-25 | 江苏多维科技有限公司 | Electrically shielded magnetic tunnel junction signal isolator |
| WO2022184090A1 (en) * | 2021-03-05 | 2022-09-09 | 江苏多维科技有限公司 | Laser programming and writingwriting apparatus and method for magneto-resistive device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100026289A1 (en) * | 2008-07-31 | 2010-02-04 | Taylor William P | Electronic Circuit Configured to Reset a Magnetoresistance Element |
| JP2010086638A (en) * | 2008-10-02 | 2010-04-15 | Sony Corp | Variable resistance memory device, and operating method of the same |
| CN102790613A (en) * | 2011-05-16 | 2012-11-21 | 江苏多维科技有限公司 | Switching sensor |
| US20140247042A1 (en) * | 2011-08-30 | 2014-09-04 | MultiDimension Technology Co., Ltd. | Triaxial magnetic field sensor |
| WO2014161482A1 (en) * | 2013-04-01 | 2014-10-09 | 江苏多维科技有限公司 | Push-pull flip-chip half-bridge magnetoresistive switch |
| CN208401820U (en) * | 2017-12-14 | 2019-01-18 | 江苏多维科技有限公司 | Hysteresis laser programming single-slice TMR switch sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203233390U (en) * | 2013-04-01 | 2013-10-09 | 江苏多维科技有限公司 | Push-pull type half-bridge reluctance switch with overturning chips |
| CN108259032B (en) * | 2017-12-14 | 2024-02-09 | 江苏多维科技有限公司 | Hysteresis laser programming single-slice TMR switch sensor |
-
2017
- 2017-12-14 CN CN201711337932.5A patent/CN108259032B/en active Active
-
2018
- 2018-12-13 WO PCT/CN2018/120902 patent/WO2019114790A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100026289A1 (en) * | 2008-07-31 | 2010-02-04 | Taylor William P | Electronic Circuit Configured to Reset a Magnetoresistance Element |
| JP2010086638A (en) * | 2008-10-02 | 2010-04-15 | Sony Corp | Variable resistance memory device, and operating method of the same |
| CN102790613A (en) * | 2011-05-16 | 2012-11-21 | 江苏多维科技有限公司 | Switching sensor |
| US20140247042A1 (en) * | 2011-08-30 | 2014-09-04 | MultiDimension Technology Co., Ltd. | Triaxial magnetic field sensor |
| WO2014161482A1 (en) * | 2013-04-01 | 2014-10-09 | 江苏多维科技有限公司 | Push-pull flip-chip half-bridge magnetoresistive switch |
| CN208401820U (en) * | 2017-12-14 | 2019-01-18 | 江苏多维科技有限公司 | Hysteresis laser programming single-slice TMR switch sensor |
Non-Patent Citations (1)
| Title |
|---|
| 吕华;刘明峰;曹江伟;白建民;魏福林;杨正;王建国;: "隧道磁电阻(TMR)磁传感器的特性与应用", 磁性材料及器件, no. 03 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019114790A1 (en) * | 2017-12-14 | 2019-06-20 | 江苏多维科技有限公司 | Magnetic hysteresis laser programmed single slice tmr switch sensor |
| WO2022184090A1 (en) * | 2021-03-05 | 2022-09-09 | 江苏多维科技有限公司 | Laser programming and writingwriting apparatus and method for magneto-resistive device |
| CN113063344A (en) * | 2021-03-19 | 2021-07-02 | 江苏多维科技有限公司 | Low magnetic field magnetism resistance angle sensor |
| CN114243242A (en) * | 2021-12-17 | 2022-03-25 | 江苏多维科技有限公司 | Electrically shielded magnetic tunnel junction signal isolator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108259032B (en) | 2024-02-09 |
| WO2019114790A1 (en) | 2019-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8715776B2 (en) | Method for providing AFM exchange pinning fields in multiple directions on same substrate | |
| CN102331564B (en) | Single chip bridge magnetic field sensor and preparation method thereof | |
| US6501678B1 (en) | Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems | |
| EP2040089B1 (en) | A magnetic tunnel junction (MTJ) based magnetic field angle sensor | |
| KR100300386B1 (en) | Magnetoresistance effect sensor | |
| CN108259032A (en) | Hysteresis laser programming single-slice TMR switch sensor | |
| EP2860530A1 (en) | Magnetoresistance gear sensor | |
| US6384600B1 (en) | Magnetic field sensor comprising a spin tunneling junction element | |
| US6465053B1 (en) | Method for manufacturing a magnetic device | |
| EP3229035B1 (en) | Magnetic field sensor with permanent magnet biasing | |
| JP2014516406A (en) | Single chip bridge type magnetic field sensor and manufacturing method thereof | |
| CN101672903B (en) | Preparation method of Wheatstone bridge type spin valve magnetic sensor | |
| JPH08226960A (en) | Magnetic field sensor and manufacture thereof | |
| Ferreira et al. | 2-axis magnetometers based on full wheatstone bridges incorporating magnetic tunnel junctions connected in series | |
| US7095596B2 (en) | Magnetoresistive sensor element and method for reducing the angular error of a magnetoresistive sensor element | |
| CN208401820U (en) | Hysteresis laser programming single-slice TMR switch sensor | |
| CN108089139A (en) | Resettable bipolar switch sensor | |
| CN101517427A (en) | Magnetic sensor | |
| CN208026852U (en) | Resettable bipolar switch sensor | |
| Wang et al. | Enhancing the linearity of giant magnetoresistance sensors by magnetic anisotropic design and low temperature annealing | |
| Araujo et al. | Impact of the synthetic antiferromagnet in tmr sensors for improved angular dependent output | |
| CN215641767U (en) | Magneto-resistance film structure and magneto-resistance sensor | |
| CN207819877U (en) | TMR single-slice switch sensor with linear laser programming | |
| JP2019086290A (en) | Magnetic sensor | |
| KR101965510B1 (en) | Giant magnetoresistance Sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |