CN102790613A - Switching sensor - Google Patents
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- CN102790613A CN102790613A CN2011101251535A CN201110125153A CN102790613A CN 102790613 A CN102790613 A CN 102790613A CN 2011101251535 A CN2011101251535 A CN 2011101251535A CN 201110125153 A CN201110125153 A CN 201110125153A CN 102790613 A CN102790613 A CN 102790613A
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- 230000009286 beneficial effect Effects 0.000 abstract description 3
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Abstract
The invention discloses a switching sensor, comprising a magneto-resistor element and an ASIC chip. The magneto-resistor element is adaptive with the ASIC chip and is connected on the ASIC chip. The magneto-resistor element is a sensing element and/or a reference element. The sensing element and the reference element are formed by one or a plurality of MTJ (magnetic tunnel junction) magneto-resistor elements connected in series. The switching sensor using the MTJ magneto-resistor elements as sensitive elements to induce close ferromagnetic materials is characterized by low power consumption and high sensitivity. Beneficial effects of using the technical scheme are high sensitivity, low power consumption, high response frequency, and small size.
Description
Technical field
The present invention relates to a kind of switchgear, specifically design a kind of switch sensor.
Background technology
The magnetic switch transducer is widely used in consumer electronics, white domestic appliances, three table (ammeter, water meter, gas meter), automobile and industry, and the magnetic switch transducer of main flow has Hall element and AMR (anisotropic magnetoresistive) transducer at present.Consumer electronics and three the table applications, the power consumption of honeywell switch sensor and AMR switch sensor can reach several microamperes, this be the sacrifice its operating frequency situation under obtain, its operating frequency is tens hertz, its switching point is tens Gausses; Needing the environment of high workload frequency, the power consumption of honeywell switch sensor and AMR switch sensor at automobile, commercial Application etc. is a milliampere level, and its operating frequency is the KHz level.
MTJ (MTJ) element is the novel magnetoresistance effect sensor that begins commercial Application in recent years; What it utilized is the tunneling magnetoresistance of magnetoresistance effect material; Mainly show in the magnetoresistance effect material variation, the resistance generation significant change of magnetoresistance effect along with the external magnetic field size and Orientation.In low-power consumption applications such as consumer electronics and three tables, be that the power consumption of switch sensor when operating frequency is KHz of senser is microampere order with the MTJ element, switching point is tens Gausses; Need the environment of high workload frequency at automobile, commercial Application etc., the operating frequency of MTJ switch sensor can reach megahertz, and power consumption is merely a microampere rank.
Because existing switch sensor is all higher in dormancy or operating state power consumption, and operating frequency is low, need a kind of high sensitivity for this reason, no matter low in energy consumption in dormancy or operating state, response frequency is high, the switch sensor that volume is little.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of high sensitivity, low-power consumption; Response frequency is high, and volume is little, the switch sensor of good temp characteristic; Utilize the MTJ element for senser near ferromagnetic material respond to, have low-power consumption and highly sensitive characteristic.
For achieving the above object; Technical scheme of the present invention is following: a kind of switch sensor; Comprise magnetoresistive element and asic chip, said magnetoresistive element and said asic chip are suitable, and said magnetoresistive element is connected on the said asic chip; Said magnetoresistive element is sensing element and/or reference element, and said sensing element and said reference element are composed in series for one or more MTJ magnetoresistive element.
Preferably; Said MTJ magnetoresistive element comprises pinning layer, magnetic nailed layer, nonmagnetic oxide layer and magnetic free layer; The magnetic free layer magnetic moment direction of said sensing element is vertical with magnetic nailed layer magnetic moment direction or at an angle, the magnetic moment direction of the magnetic free layer of said reference element is parallel with the magnetic moment direction of magnetic nailed layer.
Preferably, said magnetoresistive element is one, two or four.
Preferably, a said magnetoresistive element is a sensing element.
Preferably, said two magnetoresistive elements are two sensing elements or a sensing element and a reference element, and said two magnetoresistive elements are that half-bridge connects.
Preferably, said four magnetoresistive elements are two sensing elements and two reference elements that four sensing elements or space are provided with, and said four magnetoresistive elements are that full-bridge connects.
The present invention utilize MTJ electromagnetism resistance element for senser near ferromagnetic material respond to, have low-power consumption and highly sensitive characteristic.Adopt the beneficial effect of present technique scheme to be: high sensitivity, no matter low in energy consumption in dormancy or operating state, response frequency is high, and volume is little.
Description of drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention technology; To do to introduce simply to the accompanying drawing of required use in the embodiment technical description below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a MTJ magnetic tunnel junction structure sketch map;
Fig. 2 is a MTJ magnetic tunnel-junction magneto-resistor output characteristic sketch map;
Fig. 3 is the sketch map of a kind of embodiment of the present invention;
Fig. 4 is the sketch map of a kind of embodiment of the present invention;
Fig. 5 is the sketch map of a kind of embodiment of the present invention;
Fig. 6 is the sketch map of a kind of embodiment of the present invention;
Fig. 7 is the sketch map of a kind of embodiment of the present invention;
Fig. 8 is the sketch map of a kind of embodiment of the present invention;
Fig. 9 is the sketch map of a kind of embodiment of the present invention;
Figure 10 is the output signal schematic representation of half-bridge circuit and single resistance constant-current circuit;
Figure 11 is the output signal schematic representation of full-bridge circuit;
Figure 12 is the one pole signal schematic representation that opens the light;
Figure 13 is for latching the switching signal sketch map;
Figure 14 is full utmost point switching signal sketch map.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
As shown in Figure 1, the structure of MTJ magnetic tunnel-junction is made up of nano-scale multilayer film: pinning layer 1, magnetic nailed layer 2, nonmagnetic oxide layer 3, magnetic free layer 4.The magnetic moment direction 5 of magnetic nailed layer 2 is vertical each other with the magnetic moment direction 6 of magnetic free layer 4 or at an angle.The magnetic moment direction 6 of magnetic free layer 4 changes along with the change of the size and Orientation of externally-applied magnetic field 7.The operation principle of MTJ magnetic tunnel-junction is that the magnetic resistance of MTJ is along with the magnetic moment direction 6 of magnetic free layer 4 changes with the variation of the angle of the magnetic moment direction 5 of magnetic nailed layer 2.When the magnetic moment direction 6 of magnetic free layer 4 changed along with the change of the size and Orientation of externally-applied magnetic field 7, the magnetic resistance of tunnel junction MTJ also changed thereupon.
As shown in Figure 2; When the magnetic moment direction of the direction of externally-applied magnetic field 7 and nailed layer 25 is parallel; When the intensity of externally-applied magnetic field is greater than H1 simultaneously; The magnetic moment direction of magnetic free layer 4 is parallel with the direction of externally-applied magnetic field 7, and then parallel with the magnetic moment direction 5 of magnetic nailed layer 2, and at this moment the magnetic resistance of tunnel junction MTJ is minimum.When magnetic moment direction 5 antiparallels of the direction of externally-applied magnetic field 7 and nailed layer 2; When the intensity of externally-applied magnetic field is greater than H2 simultaneously; The direction antiparallel of the magnetic moment direction of magnetic free layer 4 and externally-applied magnetic field 7; And then with magnetic moment direction 5 antiparallels of magnetic nailed layer 2, at this moment the magnetic resistance of tunnel junction MTJ is maximum.Magnetic field range between H1 and the H2 is exactly the measuring range of MTJ.
The present invention adopts the combination of following mode or following mode that the magnetic moment direction of magnetic free layer is setovered; Make the magnetic moment direction of magnetic free layer vertical with the magnetic moment direction of magnetic nailed layer or at an angle: on magnetic free layer upper strata or lower floor's deposition one deck inverse ferric magnetosphere, to utilize the exchange coupling between itself and magnetic free layer that the magnetic moment direction of magnetic free layer is setovered; Nai Er coupling through between magnetic free layer and magnetic nailed layer is setovered to the magnetic moment direction of magnetic free layer; The integrated electric current line that is used for magnetic free layer magnetic moment direction biasing that is provided with on transducer, this electric current line current direction is identical with magnetic nailed layer magnetic moment direction; The permanent magnet that magnetic free layer magnetic moment direction is setovered is set on transducer.
Shown in accompanying drawing 3; A kind of embodiment of the present invention; A kind of half-bridge MTJ switch sensor of recommending, near ferromagnetic material respond to, comprise two magnetoresistive elements and the asic chip 13 suitable with it; Two magnetoresistive element half-bridges connect, and two magnetoresistive elements are two sensing elements 11,12.Two sensing elements 11,12 are composed in series by one or more MTJ magnetoresistive elements.The MTJ magnetoresistive element is the magnetic Nano multi-layer film structure, comprises magnetic free layer and magnetic nailed layer, and the magnetic moment direction of the magnetic free layer of two sensing elements is respectively 121 and 122, and magnetic moment direction 121 is parallel with 122 direction opposite; The magnetic moment direction of the magnetic nailed layer of two MTJ magnetoresistive elements is respectively 111 and 112, and magnetic moment direction 111 is parallel with 112 direction opposite; The magnetic moment direction of the magnetic free layer of each sensing element is vertical with its magnetic nailed layer magnetic moment direction; Magnetic moment direction 111 is vertical with magnetic moment direction 121; Magnetic moment direction 112 is vertical with magnetic moment direction 122, and the sensitive direction 7 of recommending half-bridge is parallel with the nailed layer magnetic moment direction of two sensing elements.When the sensitive direction of recommending half-bridge 7 has externally-applied magnetic field; The magnetic free layer magnetic moment direction of a sensing element can trend towards parallel magnetic nailed layer magnetic moment direction; Its resistance can decrease; The magnetic free layer magnetic moment direction of another sensing element can trend towards antiparallel magnetic nailed layer magnetic moment direction, and its resistance can increase, thereby causes recommending the output V of half-bridge
OUTVariation, its curve of output is shown in figure 10.
The effect of suitable asic chip 13 is for chip steady voltage V to be provided with recommending half-bridge circuit
DD, the output signal with electric bridge is converted into switching signal simultaneously, can according to demand output as the single-pole switch signal of Figure 12, as Figure 13 latch switching signal, like the full utmost point switching signal of Figure 14.
As shown in Figure 4; A kind of embodiment of the present invention; Another kind is recommended half-bridge MTJ switch sensor, near ferromagnetic material respond to, comprise two magnetoresistive elements and the asic chip 13 suitable with it; Two magnetoresistive element half-bridges connect, and two magnetoresistive elements are two sensing elements 11,12.Two sensing elements 11,12 are composed in series by one or more MTJ magnetoresistive elements.The MTJ magnetoresistive element is the magnetic Nano multi-layer film structure; Comprise magnetic free layer and magnetic nailed layer; The nailed layer magnetic moment direction 111 of two sensing elements is identical with 112, and the magnetic free layer magnetic moment direction of each sensing element and magnetic nailed layer magnetic moment direction are an acute angle, and magnetic moment direction 111 is an acute angle with magnetic moment direction 121; Magnetic moment direction 112 is an acute angle with magnetic moment direction 122; And each MTJ magnetoresistive element free layer magnetic moment direction is identical with the angle of nailed layer magnetic moment direction, and free layer magnetic moment direction 121 is different with 122, and the sensitive direction 7 of recommending half-bridge is vertical with two sensing element nailed layer magnetic moment direction.When the sensitive direction of recommending half-bridge 7 has externally-applied magnetic field; The magnetic free layer magnetic moment direction of a sensing element can trend towards parallel magnetic nailed layer magnetic moment direction; Its resistance can decrease; The magnetic free layer magnetic moment direction of another sensing element can trend towards antiparallel magnetic nailed layer magnetic moment direction, and its resistance can increase, thereby causes recommending the output V of half-bridge
OUTVariation, its curve of output is shown in figure 10.
The effect of suitable asic chip 13 is for chip steady voltage V to be provided with recommending half-bridge circuit
DD, the output signal with electric bridge is converted into switching signal simultaneously, can according to demand output as the single-pole switch signal of Figure 12, as Figure 13 latch switching signal, like the full utmost point switching signal of Figure 14.
As shown in Figure 5; A kind of embodiment of the present invention; A kind of with reference to half-bridge MTJ switch sensor, near ferromagnetic material respond to, it comprises two magnetoresistive elements and the asic chip 23 suitable with it; Two magnetoresistive element half-bridges connect, and two magnetoresistive elements are a sensing element 21 and a reference element 22.Sensing element 21 is composed in series by one or more MTJ magnetoresistive elements with reference element 22.The MTJ magnetoresistive element is the magnetic Nano multi-layer film structure, comprises magnetic free layer and magnetic nailed layer.The magnetic free layer magnetic moment direction 221 of sensing element is vertical with magnetic nailed layer magnetic moment direction 211.Sensitive direction 7 with reference to half-bridge is parallel with nailed layer magnetic moment direction 211.When the sensitive direction 7 with reference to half-bridge has externally-applied magnetic field; The magnetic free layer magnetic moment direction 221 of sensing element 21 can trend towards parallel or antiparallel magnetic nailed layer magnetic moment direction 211; Its resistance can decrease or raise, thereby causes the output V with reference to half-bridge
OUTVariation, its typical curve of output is shown in figure 10.
Because magnetoresistive element 22 is a reference element; The magnetic moment direction of its magnetic free layer is parallel with the magnetic moment direction of magnetic nailed layer; Can reduce its sensitivity through the combination of following method or following several method: can screen be set on its surface; Screen is the soft magnetic material of high magnetic permeability, reduces its susceptibility; Can be on its free layer upper strata or lower floor's deposition inverse ferric magnetosphere or magnetic layer, utilize the end of a performance of exchange coupling or magnetic layer and the free layer of inverse ferric magnetosphere and free layer to be coupled its free layer magnetic moment is setovered, reduce its susceptibility; Can permanent magnet be set in its both sides, permanent magnet reduces its susceptibility to its free layer magnetic moment biasing; Can utilize its anisotropy energy to its free layer magnetic moment biasing through reference element is long and narrow in sensing element, reduce its susceptibility.
With the effect with reference to the suitable asic chip 23 of half-bridge circuit be steady voltage V to be provided for chip
DD, the output signal with electric bridge is converted into switching signal simultaneously, can according to demand output as the single-pole switch signal of Figure 12, as Figure 13 latch switching signal, like the full utmost point switching signal of Figure 14.
As shown in Figure 6; A kind of embodiment of the present invention; A kind of single resistance constant current MTJ switch sensor, near ferromagnetic material respond to, it comprises a magnetoresistive element and the asic chip 32 suitable with it; A magnetoresistive element is a sensing element, and said sensing element 31 is composed in series by one or more MTJ magnetoresistive elements.The MTJ magnetoresistive element is the magnetic Nano multi-layer film structure, comprises magnetic free layer and magnetic nailed layer, and magnetic free layer magnetic moment direction 321 is vertical with magnetic nailed layer magnetic moment direction 311, and sensitive direction 7 is parallel with nailed layer magnetic moment direction 311.When sensitive direction 7 has externally-applied magnetic field, the magnetic free layer magnetic moment direction 321 of sensing element 31 can trend towards parallel or antiparallel magnetic nailed layer magnetic moment direction 311, and its resistance can decrease or raise, thereby causes exporting V
OUT=V
OH-V
OLVariation, its curve of output is shown in figure 10.
With the effect of the suitable asic chip 32 of single resistance constant-current circuit be steady current to be provided for chip; Output signal with circuit is converted into switching signal simultaneously, can according to demand output as the single-pole switch signal of Figure 12, as Figure 13 latch switching signal, like the full utmost point switching signal of Figure 14.
As shown in Figure 7; A kind of embodiment of the present invention, a kind of full-bridge MTJ switch sensor of recommending, near ferromagnetic material respond to; It comprises four magnetoresistive elements and the asic chip 45 suitable with it; Four magnetoresistive element full-bridges connect, and four magnetoresistive elements are that 41,42,43 and 44, four sensing elements 41,42,43 of four sensing elements and 44 are composed in series by one or more MTJ magnetoresistive elements.The MTJ magnetoresistive element is the magnetic Nano multi-layer film structure; Comprise magnetic free layer and magnetic nailed layer; The sensing element 41 of relative position is identical with 422 with 42 magnetic free layer magnetic moment direction 421; The sensing element 43 of relative position is identical with 424 with 44 magnetic free layer magnetic moment direction 423, and the sensing element 41 of relative position is identical with 412 with 42 magnetic nailed layer magnetic moment direction 411, and the magnetic nailed layer magnetic moment direction 413 of the sensing element of relative position is identical with 414; The magneto-resistor 41 of adjacent position and 44 magnetic free layer magnetic moment direction 421 and 424 antiparallels; The magneto-resistor 43 of adjacent position and 42 magnetic free layer magnetic moment direction 423 and 422 antiparallels, the magneto-resistor 41 of adjacent position and 44 magnetic nailed layer magnetic moment direction 411 and 414 antiparallels, the magneto-resistor 43 of adjacent position and 42 magnetic nailed layer magnetic moment direction 413 and 412 antiparallels; The magnetic free layer magnetic moment direction of each sensing element is vertical with magnetic nailed layer magnetic moment direction; Magnetic moment direction 421 is vertical with magnetic moment direction 411, and magnetic moment direction 422 is vertical with magnetic moment direction 412, and magnetic moment direction 423 is vertical with magnetic moment direction 413; Magnetic moment direction 424 is vertical with magnetic moment direction 414, and the sensitive direction 7 of recommending full-bridge is parallel with the nailed layer magnetic moment direction.When the sensitive direction of recommending full-bridge 7 has externally-applied magnetic field; One group of magnetic free layer magnetic moment direction that is in two sensing elements of relative position can trend towards parallel magnetic nailed layer magnetic moment direction; Its resistance can decrease; The magnetic free layer magnetic moment direction that another group is in two sensing elements of relative position can trend towards antiparallel magnetic nailed layer magnetic moment direction, and its resistance can increase, thereby causes recommending the full-bridge output voltage V
OUT=V
OUT+-V
OUT-Variation, its curve of output is shown in figure 11.
The effect of suitable asic chip 45 is for chip steady voltage V to be provided with recommending full-bridge circuit
DD, the output signal with electric bridge is converted into switching signal simultaneously, can according to demand output as the single-pole switch signal of Figure 12, as Figure 13 latch switching signal, like the full utmost point switching signal of Figure 14.
As shown in Figure 8; A kind of embodiment of the present invention, another kind recommend full-bridge MTJ switch sensor, near ferromagnetic material respond to; It comprises four magnetoresistive elements and the asic chip 45 suitable with it; Four magnetoresistive element full-bridges connect, and four magnetoresistive elements are that 41,42,43 and 44, four sensing elements 41,42,43 of four sensing elements and 44 are composed in series by one or more MTJ magnetoresistive elements.The MTJ magnetoresistive element is the magnetic Nano multi-layer film structure; Comprise magnetic free layer and magnetic nailed layer, the magnetic moment direction 411,412,413 of the magnetic nailed layer of four sensing elements is identical with 414, and the magnetic free layer magnetic moment direction of each sensing element and the magnetic moment direction of magnetic nailed layer are an acute angle; Magnetic moment direction 421 is an acute angle with magnetic moment direction 411; The magnetic moment direction 412 of magnetic moment direction 422 and magnetic nailed layer is an acute angle, and magnetic moment direction 423 is an acute angle with magnetic moment direction 413, and magnetic moment direction 424 is an acute angle with magnetic moment direction 414; The magnetic free layer magnetic moment direction of each sensing element is identical with the angle of magnetic nailed layer magnetic moment direction; The magnetic free layer magnetic moment direction 421 of adjacent position is different with 424, and magnetic moment direction 423 is different with 422, and the magnetic free layer magnetic moment direction 421 of relative position is identical with 422; Magnetic moment direction 423 is identical with 424, and the sensitive direction 7 of recommending full-bridge is vertical with the nailed layer magnetic moment direction.When the sensitive direction of recommending full-bridge 7 has externally-applied magnetic field; One group of magnetic free layer magnetic moment direction that is in two sensing elements of relative position can trend towards parallel magnetic nailed layer magnetic moment direction; Its resistance can decrease; The magnetic free layer magnetic moment direction that another group is in two sensing elements of relative position can trend towards antiparallel magnetic nailed layer magnetic moment direction, and its resistance can increase, thereby causes recommending the full-bridge output voltage V
OUT=V
OUT+-V
OUT-Variation, its curve of output is shown in figure 11.
The effect of suitable asic chip 45 is for chip steady voltage V to be provided with recommending full-bridge circuit
DD, the output signal with electric bridge is converted into switching signal simultaneously, can according to demand output as the single-pole switch signal of Figure 12, as Figure 13 latch switching signal, like the full utmost point switching signal of Figure 14.
As shown in Figure 9, a kind of embodiment of the present invention, a kind of with reference to full-bridge MTJ switch sensor; To near ferromagnetic material respond to; It comprises four magnetoresistive elements and the asic chip suitable with it, and four magnetoresistive elements are that full-bridge connects, and four magnetoresistive elements are 51,52 and two reference elements 53,54 of two sensing elements; And sensing element and the series connection of reference element space; Sensing element 51,52 and reference element the 53, the 54th are composed in series by one or more MTJ magnetoresistive elements, and the MTJ magnetoresistive element is the magnetic Nano multi-layer film structure, comprise magnetic free layer and magnetic nailed layer; The magnetic free layer magnetic moment direction 521 of two sensing elements is identical with 522; The magnetic moment direction 511 of the magnetic nailed layer of two sensing elements is identical with 512, and the magnetic free layer magnetic moment direction of each MTJ magnetoresistive element is vertical with magnetic nailed layer magnetic moment direction, and magnetic moment direction 521 is vertical with magnetic moment direction 511; Magnetic moment direction 522 is vertical with magnetic moment direction 512, and is parallel with nailed layer magnetic moment direction 511,512 with reference to the sensitive direction 7 of full-bridge.When the sensitive direction 7 with reference to full-bridge has externally-applied magnetic field; The magnetic free layer magnetic moment direction 521,522 of sensing element 51,52 can trend towards parallel or antiparallel magnetic nailed layer magnetic moment direction 511,512; Its resistance can reduce thereupon or raise simultaneously, thereby causes the output V with reference to full-bridge
OUT=V
OUT+-V
OUT-Variation, its typical curve of output is shown in figure 11.
Because MTJ magnetoresistive element 53,54 is a reference element; The magnetic moment direction of its magnetic free layer is parallel with the magnetic moment direction of magnetic nailed layer; Can reduce its sensitivity through the combination of following method or following several method: can screen be set on its surface; Screen is the soft magnetic material of high magnetic permeability, reduces its susceptibility; Can be on its free layer upper strata or lower floor's deposition inverse ferric magnetosphere or magnetic layer, utilize the end of a performance of exchange coupling or magnetic layer and the free layer of inverse ferric magnetosphere and free layer to be coupled its free layer magnetic moment is setovered, reduce its susceptibility; Can permanent magnet be set in its both sides, permanent magnet reduces its susceptibility to its free layer magnetic moment biasing; Can through with reference element long and narrow in the ratio sensing element, utilize its anisotropy energy to the biasing of its free layer magnetic moment, reduce its susceptibility.
With the effect with reference to the suitable asic chip 55 of full-bridge circuit be steady voltage V to be provided for chip
DD, the output signal with electric bridge is converted into switching signal simultaneously, can according to demand output as the single-pole switch signal of Figure 12, as Figure 13 latch switching signal, like the full utmost point switching signal of Figure 14.
The present invention utilize MTJ electromagnetism resistance element for senser near ferromagnetic material respond to, have low-power consumption and highly sensitive characteristic.Adopt the beneficial effect of present technique scheme to be: high sensitivity, no matter low in energy consumption in dormancy or operating state, response frequency is high, and volume is little.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (6)
1. switch sensor; Comprise magnetoresistive element and asic chip; Said magnetoresistive element and said asic chip are suitable, and said magnetoresistive element is connected on the said asic chip, it is characterized in that; Said magnetoresistive element is sensing element and/or reference element, and said sensing element and said reference element are composed in series for one or more MTJ magnetoresistive element.
2. a kind of switch sensor according to claim 1; It is characterized in that; Said MTJ magnetoresistive element comprises pinning layer, magnetic nailed layer, nonmagnetic oxide layer and magnetic free layer; The magnetic free layer magnetic moment direction of said sensing element is vertical with magnetic nailed layer magnetic moment direction or at an angle, the magnetic moment direction of the magnetic free layer of said reference element is parallel with the magnetic moment direction of magnetic nailed layer.
3. a kind of switch sensor according to claim 1 and 2 is characterized in that, said magnetoresistive element is one, two or four.
4. a kind of switch sensor according to claim 3 is characterized in that, a said magnetoresistive element is a sensing element.
5. a kind of switch sensor according to claim 3 is characterized in that, said two magnetoresistive elements are two sensing elements or a sensing element and a reference element, and said two magnetoresistive elements are that half-bridge connects.
6. a kind of switch sensor according to claim 3 is characterized in that, said four magnetoresistive elements are two sensing elements and two reference elements that four sensing elements or space are provided with, and said four magnetoresistive elements are that full-bridge connects.
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| CN201110125153.5A CN102790613B (en) | 2011-05-16 | 2011-05-16 | Switching sensor |
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| CN201110125153.5A CN102790613B (en) | 2011-05-16 | 2011-05-16 | Switching sensor |
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| CN102790613B CN102790613B (en) | 2015-04-29 |
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| CN104065367A (en) * | 2013-03-20 | 2014-09-24 | 江苏多维科技有限公司 | Magnetoresistance switch sensor with low power consumption |
| WO2014161482A1 (en) * | 2013-04-01 | 2014-10-09 | 江苏多维科技有限公司 | Push-pull flip-chip half-bridge magnetoresistive switch |
| CN105185655A (en) * | 2015-08-12 | 2015-12-23 | 江苏多维科技有限公司 | Magnetic resistance relay |
| CN108259032A (en) * | 2017-12-14 | 2018-07-06 | 江苏多维科技有限公司 | Hysteresis laser programming single-slice TMR switch sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2978131A4 (en) * | 2013-03-20 | 2016-11-09 | Multidimension Technology Co Ltd | Low-power magnetic resistance switch sensor |
| WO2014146594A1 (en) * | 2013-03-20 | 2014-09-25 | 江苏多维科技有限公司 | Low-power magnetic resistance switch sensor |
| US9958512B2 (en) | 2013-03-20 | 2018-05-01 | MultiDimension Technology Co., Ltd. | Low-power magnetic resistance switch sensor |
| CN104065367A (en) * | 2013-03-20 | 2014-09-24 | 江苏多维科技有限公司 | Magnetoresistance switch sensor with low power consumption |
| CN104065367B (en) * | 2013-03-20 | 2017-11-07 | 江苏多维科技有限公司 | A kind of low-watt consumption magnetic resistance switch sensor |
| JP2016519872A (en) * | 2013-03-20 | 2016-07-07 | 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． | Low power magnetoresistive switch sensor |
| CN104104376A (en) * | 2013-04-01 | 2014-10-15 | 江苏多维科技有限公司 | Push-pull type chip flip half-bridge reluctance switch |
| EP2983293A4 (en) * | 2013-04-01 | 2016-11-16 | Multidimension Technology Co Ltd | Push-pull flip-chip half-bridge magnetoresistive switch |
| US9739850B2 (en) | 2013-04-01 | 2017-08-22 | MultiDimension Technology Co., Ltd. | Push-pull flipped-die half-bridge magnetoresistive switch |
| WO2014161482A1 (en) * | 2013-04-01 | 2014-10-09 | 江苏多维科技有限公司 | Push-pull flip-chip half-bridge magnetoresistive switch |
| CN105185655B (en) * | 2015-08-12 | 2017-08-29 | 江苏多维科技有限公司 | A kind of magnetoelectricity ohm relay |
| CN105185655A (en) * | 2015-08-12 | 2015-12-23 | 江苏多维科技有限公司 | Magnetic resistance relay |
| CN108259032A (en) * | 2017-12-14 | 2018-07-06 | 江苏多维科技有限公司 | Hysteresis laser programming single-slice TMR switch sensor |
| WO2019114790A1 (en) * | 2017-12-14 | 2019-06-20 | 江苏多维科技有限公司 | Magnetic hysteresis laser programmed single slice tmr switch sensor |
| CN108259032B (en) * | 2017-12-14 | 2024-02-09 | 江苏多维科技有限公司 | Hysteresis laser programming single-slice TMR switch sensor |
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