CN203587786U - Push-pull bridge type magnetic sensor for high-intensity magnetic field - Google Patents
Push-pull bridge type magnetic sensor for high-intensity magnetic field Download PDFInfo
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- CN203587786U CN203587786U CN201320647519.XU CN201320647519U CN203587786U CN 203587786 U CN203587786 U CN 203587786U CN 201320647519 U CN201320647519 U CN 201320647519U CN 203587786 U CN203587786 U CN 203587786U
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- 229910052742 iron Inorganic materials 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
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Abstract
The utility model discloses a push-pull bridge type magnetic sensor for a high-intensity magnetic field. The sensor comprises two substrates, magnetoresistance sensing elements, a push arm attenuator and a pull arm attenuator. The magnetization directions of pinning layers of the magnetoresistance sensing elements on the same substrate are same. The magnetization directions of pinning layers of the magnetoresistance sensing elements on different substrates are opposite. The magnetoresistance sensing elements on one substrate are mutually electrically connected to form a push arm of a push-pull electrical bridge. The magnetoresistance sensing elements on the other substrate are mutually electrically connected to form a pull arm of the push-pull electrical bridge. The magnetoresistance sensing elements on the push arm and the magnetoresistance sensing elements on the pull arm are arranged on the upper portion or the lower portion of the push arm attenuator and the upper portion or the lower portion of the pull arm attenuator in rows respectively. The push-pull bridge type magnetic sensor can be achieved on three electrical bridge structures, namely a quasi electrical bridge structure, a half electrical bridge structure and a full electrical bridge structure. The push-pull bridge type magnetic sensor has the following advantages of being low in power consumption, small in offset, good in linearity, wide in working range and capable of working in the high-intensity magnetic field. The sensitivity of the push-pull bridge type magnetic sensor can be two times of the maximum sensitivity of a single-chip reference bridge type magnetic sensor.
Description
Technical field
The utility model relates to Magnetic Sensor technical field, particularly a kind of push-pull bridge Magnetic Sensor for high-intensity magnetic field.
Background technology
Magnetic Sensor is widely used in and in modern industry and electronic product, with induced field intensity, measures the physical parameters such as electric current, position, direction.In the prior art, there are many dissimilar sensors for measuring magnetic field and other parameters, Hall (Hall) element for example, anisotropic magnetoresistance (Anisotropic Magnetoresistance, AMR) Magnetic Sensor that element or giant magnetoresistance (Giant Magnetoresistance, GMR) element is sensitive element.
Although Hall magnetic sensor can be worked in high-intensity magnetic field, the shortcomings such as sensitivity is very low, power consumption large, poor linearity.Although AMR magnetic strength device remolding sensitivity Hall element is high, its manufacturing process is complicated, and power consumption is high, and is not suitable for high-intensity magnetic field.GMR Magnetic Sensor is compared Hall magnetic sensor higher sensitivity, but its range of linearity is on the low side, and is not also suitable for high-intensity magnetic field.
TMR(Tunnel MagnetoResistance) Magnetic Sensor is the Novel magnetic power inhibition effect sensor that starts in recent years commercial Application, its utilization be that the tunneling magnetoresistance of Researches for Magnetic Multilayer Films is responded to magnetic field, it has higher sensitivity, lower power consumption, the better linearity and wider working range with respect to Hall magnetic sensor, AMR Magnetic Sensor and GMR Magnetic Sensor.But existing TMR Magnetic Sensor is not still suitable in high-intensity magnetic field and works, and the range of linearity is also wide not.
Summary of the invention
The purpose of this utility model is to overcome the above problem existing in prior art, and a kind of push-pull bridge Magnetic Sensor being applicable in high-intensity magnetic field is provided.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the utility model provides a kind of push-pull bridge Magnetic Sensor for high-intensity magnetic field, and this sensor comprises push arm substrate and the substrate of drawing bow;
At least one push arm being electrically connected to form by one or more magneto-resistor sensing elements and drawing bow that at least one is electrically connected to form by one or more magneto-resistor sensing elements;
At least one push arm attenuator and at least one attenuator of drawing bow;
Described push arm and described push arm attenuator are deposited on described push arm substrate, described in draw bow and described in the attenuator of drawing bow draw bow on substrate described in being deposited on;
Described push arm attenuator and described in the draw bow long axis direction of attenuator be Y direction, short-axis direction is X-direction;
Magneto-resistor sensing element in described push arm is in column be arranged in described push arm attenuator above or below, described in magneto-resistor sensing element in drawing bow in column be arranged in the attenuator of drawing bow above or below;
The direction of magnetization of the pinned magnetic layer of same on-chip magneto-resistor sensing element is identical, described push arm substrate with described in the draw bow direction of magnetization of pinned magnetic layer of on-chip magneto-resistor sensing element contrary;
Described push arm substrate and described in the draw bow sensitive direction of on-chip magneto-resistor sensing element be X-direction.
Preferably, described in each, described in push arm attenuator and each, draw bow attenuator above or below the described magneto-resistor sensing element of corresponding at most row respectively separately, same on-chip described push arm attenuator or described in the relation of drawing bow between the number of attenuator and the columns of described magneto-resistor sensing element as follows: NA>=NS+2i, wherein NA is the number of push arm attenuator or the attenuator of drawing bow, NS is the columns of magneto-resistor sensing element, and i is nonnegative integer.
Preferably, described magneto-resistor sensing element is GMR or TMR sensing element.
Preferably, for described push arm substrate and described in the substrate of drawing bow, the direction of magnetization of the pinning layer of one of them on-chip described magneto-resistor sensing element is X-axis positive dirction, and the direction of magnetization of the pinning layer of another on-chip described magneto-resistor sensing element is X-axis negative direction.
Preferably, when there is no externally-applied magnetic field, described magneto-resistor sensing element can carry out by the combination of any one or at least two kinds in coil, double crossing over effect, shape anisotropy on permanent magnet, sheet on sheet the direction of magnetization of bias magnetic free love layer, wherein, described direction that goes up the intersection bias-field that on permanent magnet and sheet, coil produces is Y direction.
Preferably, described push arm and described in the electric bridge being electrically connected to form of drawing bow be half-bridge, full-bridge or accurate bridge.
Preferably, described push arm with described in the quantity of magneto-resistor sensing element on drawing bow identical and be parallel to each other.
Preferably, described push arm attenuator with described in the draw bow quantity of attenuator identical and be parallel to each other.
Preferably, described push arm attenuator and described in the attenuator of drawing bow be elongated strip shaped array, its composition material is soft iron magnetic alloy, contains a kind of element in Ni, Fe and Co or multiple element at least.
Preferably, described push arm and described in the draw bow gain coefficient Asns<1 in magnetic field at upper magneto-resistor sensing element place.
Preferably, described push arm substrate and described in the substrate of drawing bow comprised integrated circuit, or be connected with other substrate that has comprised integrated circuit.
Preferably, described integrated circuit is CMOS, BiCMOS, Bipolar, BCDMOS or SOI, described push arm Direct precipitation on the on-chip integrated circuit of described push arm, described in the Direct precipitation of drawing bow described, draw bow on on-chip integrated circuit.
Preferably, described substrate is asic chip, and it includes any one or several application circuits in off-centre circuit, gain (gain) circuit, calibration circuit, temperature-compensation circuit and logic (logic) circuit.
Preferably, described logical circuit is digital switch circuit or anglec of rotation counting circuit.
Compared with prior art, the utlity model has following beneficial effect: low in energy consumption, side-play amount is little, the linearity good, working range is wide and be applicable to high-intensity magnetic field, in addition, the sensitivity of this design can reach single-chip with reference to 2 times of the peak response of bridge-type design.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the utility model embodiment technology, to the accompanying drawing of required use in embodiment technical description be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of push-pull bridge Magnetic Sensor in prior art.
Fig. 2 is the structural representation of the push-pull bridge Magnetic Sensor in the utility model.
Fig. 3 is magneto-resistor sensing element Distribution of Magnetic Field figure around.
Fig. 4 be magneto-resistor sensing element position with corresponding gain coefficient between relation curve.
Fig. 5 is the response curve of magneto-resistor sensing element.
Fig. 6 is the conversion diagram that in the utility model, push-pull bridge Magnetic Sensor has or not attenuator.
Embodiment
Below in conjunction with drawings and Examples, summary of the invention of the present utility model is further described.
Fig. 1 is the structural representation of the disclosed single-chip push-pull bridge Magnetic Sensor of prior art Patent application 201310325337.5.This sensor comprises substrate 1, pad 6-9 for input and output, a plurality ofly be inclined at substrate 1 push arm flux concentrator 12 and the flux concentrator 13 of drawing bow above, and lay respectively at gap 14 between adjacent two push arm flux concentrators and the magneto-resistor sensing element 10 and 11 at adjacent two 15 places, gap between flux concentrator that draw bow.The direction of magnetization of magneto-resistor sensing element 10 and 11 pinning layer is identical.This sensor is easily saturated, can not be in the middle of high-intensity magnetic field.
Embodiment
Fig. 2 is a kind of structural representation of the push-pull bridge Magnetic Sensor in the utility model.This sensor comprises push arm substrate 20, the substrate 21 of drawing bow, a plurality of magneto- resistor sensing elements 22,42, a plurality of push arm attenuators 23, the attenuator 41 of drawing bow, pad 24-39.Wherein, magneto-resistor sensing element 22, push arm attenuator 23, pad 24-31 are deposited on push arm substrate 20, magneto-resistor sensing element 42, the attenuator 41 of drawing bow, pad 32-39 are deposited on and draw bow on substrate 21, push arm substrate 20 with draw bow substrate 21 except direction is different, other is all identical.The long axis direction of push arm attenuator 23 and the attenuator 41 of drawing bow is Y direction, and short-axis direction is X-direction.Pad 24,25,36,37 respectively as power source supply end V
bias, earth terminal GND, voltage output end V+, V-, pad 26-29 is electrically connected to pad 34,35,38,39 respectively.Magneto- resistor sensing element 22,42 is mutually electrically connected to and forms push arm and draw bow respectively, and be in columnly arranged in push arm attenuator 23, the below of attenuator 41 of drawing bow, but be not limited to above position.The below of each push arm attenuator and each attenuator of drawing bow is placed with respectively a row magneto-resistor sensing element separately at the most.Each row magneto-resistor sensing element can contain one or at least two magneto-resistor sensing elements, and in Fig. 2, each row contains 6 magneto-resistor sensing elements.The both sides of push arm substrate 20 and the substrate 21 of drawing bow have respectively two push arm attenuators 23 and attenuator 41 belows of the drawing bow magneto- resistor sensing element 22,42 of not arranging separately, and this is in order to make the Distribution of Magnetic Field at magneto- resistor sensing element 22,42 places more even.The below that certainly as required, more push arm attenuator and/or the attenuator of drawing bow can the be set magneto-resistor sensing element of not arranging.Preferably, the do not arrange push arm attenuator of magneto-resistor sensing element and/or the attenuator of drawing bow of these belows lays respectively at the outside of push arm substrate 20 and the substrate 21 of drawing bow and middle.If necessary, the below of these push arm attenuators and/or the attenuator of the drawing bow magneto-resistor sensing element of also can arranging.Relation between same on-chip push arm attenuator or the number of the attenuator of drawing bow and the columns of magneto-resistor sensing element is as follows: NA>=NS+2i, wherein NA is the number of push arm attenuator or the attenuator of drawing bow, NS is the columns of magneto-resistor sensing element, and i is nonnegative integer.In addition, magneto- resistor sensing element 22,42 also can in columnly be arranged in the top of push arm attenuator 23, the attenuator 41 of drawing bow, and does not demonstrate this kind of situation in Fig. 2.
The direction of magnetization of the pinning layer of same on-chip each magneto-resistor sensing element 22 and each magneto-resistor sensing element 42 is identical, but magneto-resistor sensing element 22 is contrary with the direction of magnetization of the pinning layer of magneto-resistor sensing element 42, be respectively 100,101, direction of magnetization 101 is identical with X-direction, and direction of magnetization 100 is contrary with X-direction.The sensitive direction of magneto- resistor sensing element 22,42 is X-direction, and it can be GMR or TMR sensing element, and the quantity of magneto- resistor sensing element 22,42 is identical and be parallel to each other.In addition, when there is no externally-applied magnetic field, described magneto-resistor sensing element can carry out by coil, double crossing over effect, shape anisotropy or their any combination on permanent magnet, sheet on sheet the direction of magnetization of bias magnetic free love layer, make it vertical with the direction of magnetization of pinning layer, the direction of the intersection bias-field that on sheet, on permanent magnet and sheet, coil produces is Y direction.Magneto-resistor sensing element 22 can be contrary with the direction of bias-field of intersecting on magneto-resistor sensing element 42, one along Y-axis forward, another, also can be identical along Y-axis negative sense, all along Y-axis forward or Y-axis negative sense.
In the present embodiment, be to adopt pad Bonding to carry out input and output connection, also can adopt the method for packaging semiconductor such as flip-chip, BGA Package, wafer-level packaging and chip on board encapsulation.
Fig. 3 is magneto-resistor sensing element 22 below the attenuator 23 Distribution of Magnetic Field figure in externally-applied magnetic field.In figure, the direction of externally-applied magnetic field is 102.As can be seen from the figure, the magnetic field intensity by attenuator 23 can significantly decay, so even if apply high-intensity externally-applied magnetic field, as long as in the work magnetic field range of magneto-resistor sensing element 22, just this magnetic field can be detected.As can be seen here, even the push-pull bridge Magnetic Sensor in the utility model is positioned in high-intensity magnetic field, the magnetic field size that this sensor senses is the magnetic field after decay, as long as within its saturation range, this sensor still can normally be worked.Magneto-resistor sensing element 42 Distribution of Magnetic Field is around identical with Fig. 3, at this, just no longer goes to live in the household of one's in-laws on getting married and chats.
Fig. 4 be magneto- resistor sensing element 22,42 positions with corresponding gain coefficient between relation curve.From figure, curve 40 can be found out, the gain coefficient Asns<1 in magneto- resistor sensing element 22,42 magnetic fields, place, position.From this curve, also can obtain the conclusion that the magnetic field intensity by attenuator 23 can significantly decay.
Fig. 5 is the response curve of magneto-resistor sensing element 22,42.When the direction of externally-applied magnetic field 102 and the direction of magnetization of pinning layer 47 parallel, simultaneously during the be greater than-Bs+Bo 51 of intensity of externally-applied magnetic field, the direction of magnetization 46 of magnetic free layer is parallel with the direction of externally-applied magnetic field 102, and then parallel with the direction of magnetization 47 of pinning layer, now the magnetic resistance of magneto-resistor sensing element is minimum, is R
l48.When the direction of externally-applied magnetic field 102 and the direction of magnetization of pinning layer 47 antiparallels, when the intensity of externally-applied magnetic field is greater than Bs+Bo 52 simultaneously, the direction of magnetization 46 of magnetic free layer is parallel with the direction of externally-applied magnetic field 102, and then with direction of magnetization 47 antiparallels of pinning layer, now the magnetic resistance of magneto-resistor sensing element is maximum, is R
h49.When the intensity of externally-applied magnetic field 102 is Bo 50, the direction of magnetization 46 of magnetic free layer is vertical with the direction of magnetization 47 of pinning layer, and now, the magnetic resistance of magneto-resistor sensing element is R
l48 and R
h49 intermediate value, i.e. (R
l+ R
h)/2.Magnetic field between-Bs+Bo 51 and Bs+Bo 52 is the measurement range of sensor.As can be seen from the figure, it is linear that curve 53 is between-Bs+Bo 25 and Bs+Bo 26, and resistance change rate is
.
For TMR sensing element, its resistance change rate can reach 200%, and for GMR element, its resistance change rate is the highest only has 10%.
Fig. 6 is magneto-resistor sensing element while being TMR sensing element, the conversion diagram when push-pull bridge Magnetic Sensor in the utility model has or not attenuator.Curve 43 correspondences be the situation that there is no attenuator, curve 44 correspondences be the situation that has attenuator.The size that in figure, transverse axis is externally-applied magnetic field, the longitudinal axis is the ratio between sensor output voltage and supply voltage.Contrasting two curves can find out, after having used attenuator, the linear working range of sensor obviously broadens, and the linearity is also better, and curve initial point up-down symmetry is better, that is to say that side-play amount can be less.
Discussed above is that electric bridge is the situation of full-bridge, because the principle of work of half-bridge and accurate bridge is identical with full-bridge, at this, just repeats no more, and above-mentioned resulting conclusion is applicable to the push-pull bridge Magnetic Sensor of half-bridge and accurate bridge construction too.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (14)
1. for a push-pull bridge Magnetic Sensor for high-intensity magnetic field, it is characterized in that: this sensor comprises
Push arm substrate and the substrate of drawing bow;
At least one push arm being electrically connected to form by one or more magneto-resistor sensing elements and drawing bow that at least one is electrically connected to form by one or more magneto-resistor sensing elements;
At least one push arm attenuator and at least one attenuator of drawing bow;
Described push arm and described push arm attenuator are deposited on described push arm substrate, described in draw bow and described in the attenuator of drawing bow draw bow on substrate described in being deposited on;
Described push arm attenuator and described in the draw bow long axis direction of attenuator be Y direction, short-axis direction is X-direction;
Magneto-resistor sensing element in described push arm is in column be arranged in described push arm attenuator above or below, described in magneto-resistor sensing element in drawing bow in column be arranged in the attenuator of drawing bow above or below;
The direction of magnetization of the pinned magnetic layer of same on-chip magneto-resistor sensing element is identical, described push arm substrate with described in the draw bow direction of magnetization of pinned magnetic layer of on-chip magneto-resistor sensing element contrary;
Described push arm substrate and described in the draw bow sensitive direction of on-chip magneto-resistor sensing element be X-direction.
2. the push-pull bridge Magnetic Sensor for high-intensity magnetic field according to claim 1, it is characterized in that, described in each, described in push arm attenuator and each, draw bow attenuator above or below the described magneto-resistor sensing element of corresponding at most row respectively separately, same on-chip described push arm attenuator or described in the relation of drawing bow between the number of attenuator and the columns of described magneto-resistor sensing element as follows: NA>=NS+2i, wherein NA is the number of push arm attenuator or the attenuator of drawing bow, NS is the columns of magneto-resistor sensing element, and i is nonnegative integer.
3. the push-pull bridge Magnetic Sensor for high-intensity magnetic field according to claim 1, is characterized in that, described magneto-resistor sensing element is GMR or TMR sensing element.
4. according to the push-pull bridge Magnetic Sensor for high-intensity magnetic field described in claim 1 or 3, it is characterized in that, for described push arm substrate and described in the substrate of drawing bow, the direction of magnetization of the pinning layer of one of them on-chip described magneto-resistor sensing element is X-axis positive dirction, and the direction of magnetization of the pinning layer of another on-chip described magneto-resistor sensing element is X-axis negative direction.
5. the push-pull bridge Magnetic Sensor for high-intensity magnetic field according to claim 4, it is characterized in that, when there is no externally-applied magnetic field, described magneto-resistor sensing element can carry out by the combination of any one or at least two kinds in coil, double crossing over effect, shape anisotropy on permanent magnet, sheet on sheet the direction of magnetization of bias magnetic free love layer, wherein, described direction that goes up the intersection bias-field that on permanent magnet and sheet, coil produces is Y direction.
6. according to the push-pull bridge Magnetic Sensor for high-intensity magnetic field described in claim 1 or 3, it is characterized in that, described push arm and described in the electric bridge being electrically connected to form of drawing bow be half-bridge, full-bridge or accurate bridge.
7. the push-pull bridge magnetic field sensor for high-intensity magnetic field according to claim 1, is characterized in that, described push arm with described in the quantity of magneto-resistor sensing element on drawing bow identical and be parallel to each other.
8. the push-pull bridge magnetic field sensor for high-intensity magnetic field according to claim 1, is characterized in that, described push arm attenuator with described in the draw bow quantity of attenuator identical and be parallel to each other.
9. according to the push-pull bridge magnetic field sensor for high-intensity magnetic field described in claim 1 or 8, it is characterized in that, described push arm attenuator and described in the attenuator of drawing bow be elongated strip shaped array, its composition material is soft iron magnetic alloy, contains a kind of element or multiple element in Ni, Fe and Co.
10. the push-pull bridge magnetic field sensor for high-intensity magnetic field according to claim 1, is characterized in that, described push arm and described in the draw bow gain coefficient Asns<1 in magnetic field at upper magneto-resistor sensing element place.
The 11. push-pull bridge Magnetic Sensors for high-intensity magnetic field according to claim 1, is characterized in that, described push arm substrate and described in the substrate of drawing bow comprised integrated circuit, or be connected with other substrate that has comprised integrated circuit.
The 12. push-pull bridge Magnetic Sensors for high-intensity magnetic field according to claim 11, it is characterized in that, described integrated circuit is CMOS, BiCMOS, Bipolar, BCDMOS or SOI, described push arm Direct precipitation on the on-chip integrated circuit of described push arm, described in the Direct precipitation of drawing bow described, draw bow on on-chip integrated circuit.
The 13. push-pull bridge Magnetic Sensors for high-intensity magnetic field according to claim 1, it is characterized in that, described substrate is asic chip, and it includes any one or several application circuits in off-centre circuit, gain (gain) circuit, calibration circuit, temperature-compensation circuit and logic (logic) circuit.
The 14. push-pull bridge Magnetic Sensors for high-intensity magnetic field according to claim 13, is characterized in that, described logical circuit is digital switch circuit or anglec of rotation counting circuit.
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| CN103592608A (en) * | 2013-10-21 | 2014-02-19 | 江苏多维科技有限公司 | Push-pull bridge type magnetic sensor for high-intensity magnetic field |
| WO2015014277A1 (en) * | 2013-07-30 | 2015-02-05 | 江苏多维科技有限公司 | Singlechip push-pull bridge type magnetic field sensor |
| WO2015096744A1 (en) * | 2013-12-24 | 2015-07-02 | 江苏多维科技有限公司 | Single chip reference bridge type magnetic sensor for high-intensity magnetic field |
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- 2013-10-21 CN CN201320647519.XU patent/CN203587786U/en not_active Withdrawn - After Issue
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