[go: up one dir, main page]

CA973976A - Semiconductor device having growth interfaces, and method of reducing crystal dislocations - Google Patents

Semiconductor device having growth interfaces, and method of reducing crystal dislocations

Info

Publication number
CA973976A
CA973976A CA160,857A CA160857A CA973976A CA 973976 A CA973976 A CA 973976A CA 160857 A CA160857 A CA 160857A CA 973976 A CA973976 A CA 973976A
Authority
CA
Canada
Prior art keywords
semiconductor device
reducing crystal
crystal dislocations
growth interfaces
interfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA160,857A
Other languages
English (en)
Inventor
Michael Ettenberg
Stephen L. Gilbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA973976A publication Critical patent/CA973976A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02466—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02477—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
CA160,857A 1972-01-10 1973-01-09 Semiconductor device having growth interfaces, and method of reducing crystal dislocations Expired CA973976A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21637672A 1972-01-10 1972-01-10

Publications (1)

Publication Number Publication Date
CA973976A true CA973976A (en) 1975-09-02

Family

ID=22806816

Family Applications (1)

Application Number Title Priority Date Filing Date
CA160,857A Expired CA973976A (en) 1972-01-10 1973-01-09 Semiconductor device having growth interfaces, and method of reducing crystal dislocations

Country Status (10)

Country Link
JP (1) JPS5228634B2 (xx)
AU (1) AU466927B2 (xx)
BE (1) BE793800A (xx)
CA (1) CA973976A (xx)
DE (1) DE2300921A1 (xx)
FR (1) FR2167831B1 (xx)
GB (1) GB1417484A (xx)
IT (1) IT978097B (xx)
NL (1) NL7300350A (xx)
SE (1) SE387473B (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants
GB2215514A (en) * 1988-03-04 1989-09-20 Plessey Co Plc Terminating dislocations in semiconductor epitaxial layers
JP2588280B2 (ja) * 1989-07-10 1997-03-05 シャープ株式会社 化合物半導体発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493811A (en) * 1966-06-22 1970-02-03 Hewlett Packard Co Epitaxial semiconductor material on dissimilar substrate and method for producing the same

Also Published As

Publication number Publication date
FR2167831A1 (xx) 1973-08-24
BE793800A (fr) 1973-05-02
IT978097B (it) 1974-09-20
AU5094273A (en) 1974-07-11
JPS504977A (xx) 1975-01-20
JPS5228634B2 (xx) 1977-07-27
AU466927B2 (en) 1975-11-13
GB1417484A (en) 1975-12-10
FR2167831B1 (xx) 1977-12-30
SE387473B (sv) 1976-09-06
DE2300921A1 (de) 1973-07-19
NL7300350A (xx) 1973-07-12

Similar Documents

Publication Publication Date Title
CA995565A (en) Method of treating monocrystalline wafers
CA957250A (en) Method of producing semiconducting monocrystalline silicon and spinel substrates
CA947186A (en) Method for the solution growth of more perfect semiconductor crystals
CA987795A (en) Apparatus and method for making multi-layer epitaxial growth devices
CA973976A (en) Semiconductor device having growth interfaces, and method of reducing crystal dislocations
CA997255A (en) Apparatus for growing single crystals
CA964968A (en) Method of and apparatus for growing crystals from a solution
CA968672A (en) Apparatus and method for producing dislocation-free aiiibv single crystals
CA991280A (en) Method of and device for plasma-mig-welding
CA901079A (en) Method of producing single crystals of semiconductor material by floating-zone melting, semiconductor single crystal produced by said method and device for carrying out the same
CA845081A (en) Method of growing strain-free single crystals
CA922027A (en) Apparatus for and method of orienting crystal wafers
CA713524A (en) Method of growing dislocation-free semiconductor crystals
CA860284A (en) Control of epitaxial growth on polar monocrystalline substrates
CA783535A (en) Method of epitaxial crystal growth
CA862699A (en) Vapor-liquid-solid crystal growth technique
CA967080A (en) Method and apparatus for liquid-phase epitaxial growth
CA817384A (en) Method and apparatus for growing crystals
CA928464A (en) Method of manufacturing diamond crystals, and apparatus therefor
CA902249A (en) Semiconductor device and method of making the same
CA856196A (en) Method for growing crystals
CA897558A (en) Device for a method of growing monocrystals
CA912708A (en) Process for simultaneously gettering, passivating, and locating a junction within a silicon crystal
CA843390A (en) Apparatus and process for the epitaxial growth of silicon carbide
CA812745A (en) Method and apparatus for crystal growth