ATE529892T1 - Schreibgeschützter speicher mit eeprom-struktur - Google Patents
Schreibgeschützter speicher mit eeprom-strukturInfo
- Publication number
- ATE529892T1 ATE529892T1 AT09757723T AT09757723T ATE529892T1 AT E529892 T1 ATE529892 T1 AT E529892T1 AT 09757723 T AT09757723 T AT 09757723T AT 09757723 T AT09757723 T AT 09757723T AT E529892 T1 ATE529892 T1 AT E529892T1
- Authority
- AT
- Austria
- Prior art keywords
- write
- protected memory
- insulation layer
- eeprom structure
- storage
- Prior art date
Links
- 238000009413 insulation Methods 0.000 abstract 3
- 230000009977 dual effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0853069A FR2931289A1 (fr) | 2008-05-13 | 2008-05-13 | Memoire a structure du type eeprom et a lecture seule |
| PCT/FR2009/050868 WO2009147347A1 (fr) | 2008-05-13 | 2009-05-12 | Memoire a structure du type eeprom et a lecture seule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE529892T1 true ATE529892T1 (de) | 2011-11-15 |
Family
ID=39749732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09757723T ATE529892T1 (de) | 2008-05-13 | 2009-05-12 | Schreibgeschützter speicher mit eeprom-struktur |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8759898B2 (de) |
| EP (1) | EP2286450B1 (de) |
| JP (1) | JP5497744B2 (de) |
| CN (1) | CN102027588B (de) |
| AT (1) | ATE529892T1 (de) |
| FR (1) | FR2931289A1 (de) |
| WO (1) | WO2009147347A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120225271A1 (en) * | 2011-02-17 | 2012-09-06 | Alcoa Inc. | 2xxx series aluminum lithium alloys |
| US9287879B2 (en) * | 2011-06-07 | 2016-03-15 | Verisiti, Inc. | Semiconductor device having features to prevent reverse engineering |
| FR2978867B1 (fr) * | 2011-08-01 | 2014-03-21 | St Microelectronics Rousset | Resistance ajustable |
| US9171856B2 (en) * | 2013-10-01 | 2015-10-27 | Ememory Technology Inc. | Bias generator for flash memory and control method thereof |
| CN105810252B (zh) * | 2014-12-31 | 2018-10-16 | 展讯通信（上海）有限公司 | 一种存储单元、存储单元缺陷探测电路及存储器 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130473A (en) * | 1981-02-05 | 1982-08-12 | Seiko Epson Corp | Mos type semiconductor memory storage |
| JPS6367783A (ja) * | 1986-09-09 | 1988-03-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
| FR2623651B1 (fr) * | 1987-11-20 | 1992-11-27 | Sgs Thomson Microelectronics | Plan memoire et procede et prototype de definition d'un circuit integre electronique comportant un tel plan memoire |
| DE3743224A1 (de) | 1987-12-19 | 1989-06-29 | Merck Patent Gmbh | Verfahren und reagenz zur bestimmung von persaeuren |
| JP2807256B2 (ja) * | 1989-03-17 | 1998-10-08 | 株式会社東芝 | 不揮発性半導体メモリ |
| KR920013709A (ko) * | 1990-12-21 | 1992-07-29 | 김광호 | 불휘발성 반도체 메모리장치 및 그 제조방법 |
| JP3222705B2 (ja) * | 1993-11-30 | 2001-10-29 | 東芝マイクロエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| JPH0878544A (ja) * | 1994-08-31 | 1996-03-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
| KR100215840B1 (ko) * | 1996-02-28 | 1999-08-16 | 구본준 | 반도체 메모리셀 구조 및 제조방법 |
| JP3123924B2 (ja) * | 1996-06-06 | 2001-01-15 | 三洋電機株式会社 | 不揮発性半導体メモリ |
| US5792697A (en) * | 1997-01-07 | 1998-08-11 | United Microelectronics Corporation | Method for fabricating a multi-stage ROM |
| EP0890985B1 (de) | 1997-07-08 | 2005-11-02 | STMicroelectronics S.r.l. | Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen |
| JP2002074998A (ja) * | 2000-08-23 | 2002-03-15 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置の評価装置およびその評価方法、ならびに不揮発性半導体記憶装置およびその製造方法 |
| WO2002029741A2 (en) * | 2000-10-03 | 2002-04-11 | Zingher Joseph P | Biometric system and method for detecting duress transactions |
| KR100423075B1 (ko) * | 2001-12-19 | 2004-03-16 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| TWI257150B (en) * | 2005-02-03 | 2006-06-21 | Powerchip Semiconductor Corp | Non-volatile memory and fabricating method and operating method thereof |
| JP4892199B2 (ja) | 2005-06-06 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置の製造方法 |
| KR100676204B1 (ko) * | 2005-08-25 | 2007-01-30 | 삼성전자주식회사 | 이이피롬 셀 트랜지스터 |
| KR100725171B1 (ko) * | 2006-01-06 | 2007-06-04 | 삼성전자주식회사 | 마스크 롬을 구비하는 반도체 장치 및 그 제조 방법 |
| JP4921848B2 (ja) * | 2006-05-09 | 2012-04-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
2008
- 2008-05-13 FR FR0853069A patent/FR2931289A1/fr not_active Withdrawn
-
2009
- 2009-05-12 AT AT09757723T patent/ATE529892T1/de not_active IP Right Cessation
- 2009-05-12 US US12/990,682 patent/US8759898B2/en active Active
- 2009-05-12 CN CN2009801172498A patent/CN102027588B/zh active Active
- 2009-05-12 WO PCT/FR2009/050868 patent/WO2009147347A1/fr active Application Filing
- 2009-05-12 EP EP09757723A patent/EP2286450B1/de active Active
- 2009-05-12 JP JP2011508982A patent/JP5497744B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2286450B1 (de) | 2011-10-19 |
| WO2009147347A1 (fr) | 2009-12-10 |
| FR2931289A1 (fr) | 2009-11-20 |
| JP5497744B2 (ja) | 2014-05-21 |
| JP2011523205A (ja) | 2011-08-04 |
| US20110108902A1 (en) | 2011-05-12 |
| US8759898B2 (en) | 2014-06-24 |
| CN102027588A (zh) | 2011-04-20 |
| EP2286450A1 (de) | 2011-02-23 |
| CN102027588B (zh) | 2013-12-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |